ProASIC3 nano FPGA Fabric

User’s Guide
 ProASIC3 nano FPGA Fabric User’s Guide

Table of Contents

Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Related Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

1 FPGA Array Architecture in Low Power Flash Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Device Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
FPGA Array Architecture Support . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Device Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Related Documents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
List of Changes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

2 Low Power Modes in ProASIC3/E and ProASIC3 nano FPGAs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Power Consumption Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Static (Idle) Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
User Low Static (Idle) Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Sleep Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Shutdown Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Related Documents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
List of Changes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

3 Global Resources in Low Power Flash Devices. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Global Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Global Resource Support in Flash-Based Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
VersaNet Global Network Distribution . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Chip and Quadrant Global I/Os . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Spine Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Using Clock Aggregation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Design Recommendations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Related Documents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
List of Changes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59

4 Clock Conditioning Circuits in Low Power Flash Devices and Mixed Signal FPGAs . . . . . . . . . . . . . . 61
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Overview of Clock Conditioning Circuitry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
CCC Support in Microsemi’s Flash Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
Global Buffers with No Programmable Delays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
Global Buffer with Programmable Delay . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
Global Buffers with PLL Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
Global Input Selections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
Device-Specific Layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78

Revision 5 2
 ProASIC3 nano FPGA Fabric User’s Guide

PLL Core Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84

Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
Software Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
Detailed Usage Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
Recommended Board-Level Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112
Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113
Related Documents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113
List of Changes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113

5 FlashROM in Microsemi’s Low Power Flash Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117

Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
Architecture of User Nonvolatile FlashROM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
FlashROM Support in Flash-Based Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118
FlashROM Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
FlashROM Security . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
Programming and Accessing FlashROM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
FlashROM Design Flow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124
Custom Serialization Using FlashROM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130
Related Documents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130
List of Changes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130

6 SRAM and FIFO Memories in Microsemi's Low Power Flash Devices . . . . . . . . . . . . . . . . . . . . . . . 131
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
Device Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
SRAM/FIFO Support in Flash-Based Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134
SRAM and FIFO Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
Memory Blocks and Macros . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
Initializing the RAM/FIFO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148
Software Support . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 154
Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157
List of Changes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157

7 I/O Structures in nano Devices. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159

Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159
Low Power Flash Device I/O Support . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161
nano Standard I/Os . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162
I/O Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164
I/O Standards . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166
Wide Range I/O Support . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166
I/O Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167
Simultaneously Switching Outputs (SSOs) and Printed Circuit Board Layout . . . . . . . . . . . . . . . . . . . . . . . . . . . 176
I/O Software Support . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 177
User I/O Naming Convention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 178
I/O Bank Architecture and CCC Naming Conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 179
Board-Level Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 181
Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 182
Related Documents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 183
List of Changes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 183

Revision 5 3
Table of Contents

8 I/O Software Control in Low Power Flash Devices. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 185

Flash FPGAs I/O Support . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 186
Software-Controlled I/O Attributes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 187
Implementing I/Os in Microsemi Software . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 188
Assigning Technologies and VREF to I/O Banks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 198
Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 203
Related Documents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 203
List of Changes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 204

9 DDR for Microsemi’s Low Power Flash Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 205

Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 205
Double Data Rate (DDR) Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 205
DDR Support in Flash-Based Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 206
I/O Cell Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 207
Input Support for DDR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 209
Output Support for DDR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 209
Instantiating DDR Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 210
Design Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 216
Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 218
List of Changes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 219

10 Programming Flash Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 221

Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 221
Summary of Programming Support . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 221
Programming Support in Flash Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 222
General Flash Programming Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 223
Important Programming Guidelines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 229
Related Documents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 231
List of Changes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 232

11 Security in Low Power Flash Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 235

Security in Programmable Logic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 235
Security Support in Flash-Based Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 236
Security Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 237
Security Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 238
Security in Action . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 242
FlashROM Security Use Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 245
Generating Programming Files . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 247
Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 258
Glossary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 258
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 258
Related Documents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 259
List of Changes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 259

12 In-System Programming (ISP) of Microsemi’s Low Power Flash Devices Using FlashPro4/3/3X . . . 261
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 261
ISP Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 261
ISP Support in Flash-Based Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 262
Programming Voltage (VPUMP) and VJTAG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 263
Nonvolatile Memory (NVM) Programming Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 263

4 R e vi s i o n 5
 ProASIC3 nano FPGA Fabric User’s Guide

IEEE 1532 (JTAG) Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 264

Security . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 264
Security in ARM-Enabled Low Power Flash Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 265
FlashROM and Programming Files . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 267
Programming Solution . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 268
ISP Programming Header Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 269
Board-Level Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 271
Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 272
Related Documents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 272
List of Changes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 273

13 Core Voltage Switching Circuit for IGLOO and ProASIC3L In-System Programming . . . . . . . . . . . . 275
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 275
Microsemi’s Flash Families Support Voltage Switching Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 276
Circuit Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 277
Circuit Verification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 278
DirectC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280
Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280
List of Changes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 281

14 Microprocessor Programming of Microsemi’s Low Power Flash Devices . . . . . . . . . . . . . . . . . . . . . 283

Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 283
Microprocessor Programming Support in Flash Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 284
Programming Algorithm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 285
Implementation Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 285
Hardware Requirement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 288
Security . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 288
Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 289
List of Changes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 290

15 Boundary Scan in Low Power Flash Devices. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 291

Boundary Scan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 291
TAP Controller State Machine . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 291
Microsemi’s Flash Devices Support the JTAG Feature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 292
Boundary Scan Support in Low Power Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 293
Boundary Scan Opcodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 293
Boundary Scan Chain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 293
Board-Level Recommendations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 294
Advanced Boundary Scan Register Settings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 295
List of Changes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 296

16 UJTAG Applications in Microsemi’s Low Power Flash Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 297

Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 297
UJTAG Support in Flash-Based Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 298
UJTAG Macro . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 299
UJTAG Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300
Typical UJTAG Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 302
Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 306
Related Documents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 306
List of Changes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 306

Revision 5 5
Table of Contents

17 Power-Up/-Down Behavior of Low Power Flash Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 307

Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 307
Flash Devices Support Power-Up Behavior . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 308
Power-Up/-Down Sequence and Transient Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 309
I/O Behavior at Power-Up/-Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 311
Cold-Sparing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 316
Hot-Swapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 317
Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 317
Related Documents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 318
List of Changes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 318

A Summary of Changes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 319

History of Revision to Chapters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 319

B Product Support . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 321

Customer Service . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 321
Customer Technical Support Center . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 321
Technical Support . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 321
Website . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 321
Contacting the Customer Technical Support Center . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 321
ITAR Technical Support . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 322

Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 323

6 R e vi s i o n 5
Introduction

Contents
This user’s guide contains information to help designers understand and use Microsemi's ProASIC®3
nano devices. Each chapter addresses a specific topic. Most of these chapters apply to other Microsemi
device families as well. When a feature or description applies only to a specific device family, this is made
clear in the text.

Revision History
The revision history for each chapter is listed at the end of the chapter. Most of these chapters were
formerly included in device handbooks. Some were originally application notes or information included in
device datasheets.
A "Summary of Changes" table at the end of this user’s guide lists the chapters that were changed in
each revision of the document, with links to the "List of Changes" sections for those chapters.

Related Information
Refer to the ProASIC3 nano Low Power Flash FPGAs datasheet for detailed specifications, timing, and
package and pin information.
The website for ProASIC3 nano devices is /www.microsemi.com/soc/products/pa3nano/default.aspx.

Revision 5 7
1 – FPGA Array Architecture in Low Power Flash
Devices

Device Architecture

Advanced Flash Switch

Unlike SRAM FPGAs, the low power flash devices use a live-at-power-up ISP flash switch as their
programming element. Flash cells are distributed throughout the device to provide nonvolatile,
reconfigurable programming to connect signal lines to the appropriate VersaTile inputs and outputs. In
the flash switch, two transistors share the floating gate, which stores the programming information
(Figure 1-1). One is the sensing transistor, which is only used for writing and verification of the floating
gate voltage. The other is the switching transistor. The latter is used to connect or separate routing nets,
or to configure VersaTile logic. It is also used to erase the floating gate. Dedicated high-performance
lines are connected as required using the flash switch for fast, low-skew, global signal distribution
throughout the device core. Maximum core utilization is possible for virtually any design. The use of the
flash switch technology also removes the possibility of firm errors, which are increasingly common in
SRAM-based FPGAs.

Floating Gate Switch In

Sensing
Switching

Word

Switch Out

Figure 1-1 • Flash-Based Switch

Revision 5 9
FPGA Array Architecture in Low Power Flash Devices

FPGA Array Architecture Support

The flash FPGAs listed in Table 1-1 support the architecture features described in this document.

Table 1-1 • Flash-Based FPGAs

Series Family* Description
IGLOO® IGLOO Ultra-low power 1.2 V to 1.5 V FPGAs with Flash*Freeze technology
IGLOOe Higher density IGLOO FPGAs with six PLLs and additional I/O standards
IGLOO nano The industry’s lowest-power, smallest-size solution
IGLOO PLUS IGLOO FPGAs with enhanced I/O capabilities
®
ProASIC 3 ProASIC3 Low power, high-performance 1.5 V FPGAs
ProASIC3E Higher density ProASIC3 FPGAs with six PLLs and additional I/O standards
ProASIC3 nano Lowest-cost solution with enhanced I/O capabilities
ProASIC3L ProASIC3 FPGAs supporting 1.2 V to 1.5 V with Flash*Freeze technology
RT ProASIC3 Radiation-tolerant RT3PE600L and RT3PE3000L
Military ProASIC3/EL Military temperature A3PE600L, A3P1000, and A3PE3000L
Automotive ProASIC3 ProASIC3 FPGAs qualified for automotive applications
Fusion Fusion Mixed signal FPGA integrating ProASIC3 FPGA fabric, programmable
analog block, support for ARM® Cortex™-M1 soft processors, and flash
memory into a monolithic device
Note: *The device names link to the appropriate datasheet, including product brief, DC and switching characteristics,
and packaging information.

IGLOO Terminology
In documentation, the terms IGLOO series and IGLOO devices refer to all of the IGLOO devices as listed
in Table 1-1. Where the information applies to only one product line or limited devices, these exclusions
will be explicitly stated.

ProASIC3 Terminology
In documentation, the terms ProASIC3 series and ProASIC3 devices refer to all of the ProASIC3 devices
as listed in Table 1-1. Where the information applies to only one product line or limited devices, these
exclusions will be explicitly stated.
To further understand the differences between the IGLOO and ProASIC3 devices, refer to the Industry’s
Lowest Power FPGAs Portfolio.

10 R e visio n 5
 ProASIC3 nano FPGA Fabric User’s Guide

Device Overview
Low power flash devices consist of multiple distinct programmable architectural features (Figure 1-5 on
page 13 through Figure 1-7 on page 14):
• FPGA fabric/core (VersaTiles)
• Routing and clock resources (VersaNets)
• FlashROM
• Dedicated SRAM and/or FIFO
– 30 k gate and smaller device densities do not support SRAM or FIFO.
– Automotive devices do not support FIFO operation.
• I/O structures
• Flash*Freeze technology and low power modes

Bank 1*

I/Os

Bank 0
Bank 1

VersaTile

User Nonvolatile Flash*Freeze† Charge

FlashROM Technology Pumps

CCC-GL
Bank 1

Notes: * Bank 0 for the 30 k devices

† Flash*Freeze mode is supported on IGLOO devices.
Figure 1-2 • IGLOO and ProASIC3 nano Device Architecture Overview with Two I/O Banks (applies to 10 k and
30 k device densities, excluding IGLOO PLUS devices)

Revision 5 11
FPGA Array Architecture in Low Power Flash Devices

Bank 0
CCC

RAM Block
4,608-Bit Dual-Port
SRAM or FIFO Block
Bank 1

Bank 0
I/Os

VersaTile
Bank 1

Bank 0
ISP AES User Nonvolatile Flash*Freeze† Charge
Decryption FlashRom Technology Pumps

Bank 1

Note: † Flash*Freeze mode is supported on IGLOO devices.

Figure 1-3 • IGLOO Device Architecture Overview with Two I/O Banks with RAM and PLL
(60 k and 125 k gate densities)

Bank 1

I/Os
Bank 0
Bank 1

VersaTile

User Nonvolatile Flash*Freeze† Charge Pumps

FlashROM Technology
CCC-GL
Bank 1

Note: † Flash*Freeze mode is supported on IGLOO devices.

Figure 1-4 • IGLOO Device Architecture Overview with Three I/O Banks
(AGLN015, AGLN020, A3PN015, and A3PN020)

12 R e visio n 5
 ProASIC3 nano FPGA Fabric User’s Guide

Bank 0
CCC

RAM Block
4,608-Bit Dual-Port
SRAM or FIFO Block
Bank 3

Bank 1
I/Os

VersaTile
Bank 3

Bank 1
RAM Block
ISP AES User Nonvolatile Flash*Freeze † Charge
4,608-Bit Dual-Port
Decryption* FlashRom Technology Pumps SRAM or FIFO Block

Bank 2

Note: Flash*Freeze technology only applies to IGLOO and ProASIC3L families.

Figure 1-5 • IGLOO, IGLOO nano, ProASIC3 nano, and ProASIC3/L Device Architecture Overview with Four
I/O Banks (AGL600 device is shown)

Bank 0
CCC*

RAM Block
4,608-Bit Dual-Port
Bank 3

Bank 1

SRAM or FIFO Block

I/Os

VersaTile
Bank 3

Bank 1

ISP AES User Nonvolatile Flash*Freeze Charge

Decryption* FlashRom Technology Pumps

Bank 2

Note: * AGLP030 does not contain a PLL or support AES security.

Figure 1-6 • IGLOO PLUS Device Architecture Overview with Four I/O Banks

Revision 5 13
FPGA Array Architecture in Low Power Flash Devices

Bank 0 Bank 1
CCC
RAM Block
4,608-Bit Dual-Port SRAM
or FIFO Block
Bank 7

Bank 2
Pro I/Os

VersaTile
Bank 6

Bank 3
RAM Block
4,608-Bit Dual-Port SRAM
ISP AES User Nonvolatile Flash*Freeze† Charge
or FIFO Block
Decryption FlashRom Technology Pumps

Bank 5 Bank 4

Note: Flash*Freeze technology only applies to IGLOOe devices.

Figure 1-7 • IGLOOe and ProASIC3E Device Architecture Overview (AGLE600 device is shown)

I/O State of Newly Shipped Devices

Devices are shipped from the factory with a test design in the device. The power-on switch for VCC is
OFF by default in this test design, so I/Os are tristated by default. Tristated means the I/O is not actively
driven and floats. The exact value cannot be guaranteed when it is floating. Even in simulation software,
a tristate value is marked as unknown. Due to process variations and shifts, tristated I/Os may float
toward High or Low, depending on the particular device and leakage level.
If there is concern regarding the exact state of unused I/Os, weak pull-up/pull-down should be added to
the floating I/Os so their state is controlled and stabilized.

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 ProASIC3 nano FPGA Fabric User’s Guide

Core Architecture
VersaTile
The proprietary IGLOO and ProASIC3 device architectures provide granularity comparable to gate
arrays. The device core consists of a sea-of-VersaTiles architecture.
As illustrated in Figure 1-8, there are four inputs in a logic VersaTile cell, and each VersaTile can be
configured using the appropriate flash switch connections:
• Any 3-input logic function
• Latch with clear or set
• D-flip-flop with clear or set
• Enable D-flip-flop with clear or set (on a 4th input)
VersaTiles can flexibly map the logic and sequential gates of a design. The inputs of the VersaTile can be
inverted (allowing bubble pushing), and the output of the tile can connect to high-speed, very-long-line
routing resources. VersaTiles and larger functions can be connected with any of the four levels of routing
hierarchy.
When the VersaTile is used as an enable D-flip-flop, SET/CLR is supported by a fourth input. The
SET/CLR signal can only be routed to this fourth input over the VersaNet (global) network. However, if, in
the user’s design, the SET/CLR signal is not routed over the VersaNet network, a compile warning
message will be given, and the intended logic function will be implemented by two VersaTiles instead of
one.
The output of the VersaTile is F2 when the connection is to the ultra-fast local lines, or YL when the
connection is to the efficient long-line or very-long-line resources.

0
1
Data Y
X3 Pin 1
0 0
1 F2
1

YL

0
1
CLK
X2

CLR/
Enable
X1

CLR
XC*

Legend: Via (hard connection) Switch (flash connection) Ground

* This input can only be connected to the global clock distribution network.
Figure 1-8 • Low Power Flash Device Core VersaTile

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FPGA Array Architecture in Low Power Flash Devices

Array Coordinates
During many place-and-route operations in the Microsemi Designer software tool, it is possible to set
constraints that require array coordinates. Table 1-2 provides array coordinates of core cells and memory
blocks for IGLOO and ProASIC3 devices. Table 1-3 provides the information for IGLOO PLUS devices.
Table 1-4 on page 17 provides the information for IGLOO nano and ProASIC3 nano devices. The array
coordinates are measured from the lower left (0, 0). They can be used in region constraints for specific
logic groups/blocks, designated by a wildcard, and can contain core cells, memories, and I/Os.
I/O and cell coordinates are used for placement constraints. Two coordinate systems are needed
because there is not a one-to-one correspondence between I/O cells and core cells. In addition, the I/O
coordinate system changes depending on the die/package combination. It is not listed in Table 1-2. The
Designer ChipPlanner tool provides the array coordinates of all I/O locations. I/O and cell coordinates are
used for placement constraints. However, I/O placement is easier by package pin assignment.
Figure 1-9 on page 17 illustrates the array coordinates of a 600 k gate device. For more information on
how to use array coordinates for region/placement constraints, see the Designer User's Guide or online
help (available in the software) for software tools.

Table 1-2 • IGLOO and ProASIC3 Array Coordinates

VersaTiles Memory Rows Entire Die
Device Min. Max. Bottom Top Min. Max.
ProASIC3/
IGLOO ProASIC3L x y x y (x, y) (x, y) (x, y) (x, y)
AGL015 A3P015 3 2 34 13 None None (0, 0) (37, 15)
AGL030 A3P030 3 3 66 13 None None (0, 0) (69, 15)
AGL060 A3P060 3 2 66 25 None (3, 26) (0, 0) (69, 29)
AGL125 A3P125 3 2 130 25 None (3, 26) (0, 0) (133, 29)
AGL250 A3P250/L 3 2 130 49 None (3, 50) (0, 0) (133, 53)
AGL400 A3P400 3 2 194 49 None (3, 50) (0, 0) (197, 53)
AGL600 A3P600/L 3 4 194 75 (3, 2) (3, 76) (0, 0) (197, 79)
AGL1000 A3P1000/L 3 4 258 99 (3, 2) (3, 100) (0, 0) (261, 103)
AGLE600 A3PE600/L, 3 4 194 75 (3, 2) (3, 76) (0, 0) (197, 79)
RT3PE600L
A3PE1500 3 4 322 123 (3, 2) (3, 124) (0, 0) (325, 127)
AGLE3000 A3PE3000/L, 3 6 450 173 (3, 2) (3, 174) (0, 0) (453, 179)
RT3PE3000L or or
(3, 4) (3, 176)

Table 1-3 • IGLOO PLUS Array Coordinates

VersaTiles Memory Rows Entire Die
Device Min. Max. Bottom Top Min. Max.
IGLOO PLUS x y x y (x, y) (x, y) (x, y) (x, y)
AGLP030 2 3 67 13 None None (0, 0) (69, 15)
AGLP060 2 2 67 25 None (3, 26) (0, 0) (69, 29)
AGLP125 2 2 131 25 None (3, 26) (0, 0) (133, 29)

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 ProASIC3 nano FPGA Fabric User’s Guide

Table 1-4 • IGLOO nano and ProASIC3 nano Array Coordinates

VersaTiles Memory Rows Entire Die
Device Min. Max. Bottom Top Min. Max.
IGLOO nano ProASIC3 nano (x, y) (x, y) (x, y) (x, y) (x, y) (x, y)
AGLN010 A3P010 (0, 2) (32, 5) None None (0, 0) (34, 5)
AGLN015 A3PN015 (0, 2) (32, 9) None None (0, 0) (34, 9)
AGLN020 A3PN020 (0, 2) 32, 13) None None (0, 0) (34, 13)
AGLN060 A3PN060 (3, 2) (66, 25) None (3, 26) (0, 0) (69, 29)
AGLN125 A3PN125 (3, 2) (130, 25) None (3, 26) (0, 0) (133, 29)
AGLN250 A3PN250 (3, 2) (130, 49) None (3, 50) (0, 0) (133, 49)

Top Row (7, 79) to (189, 79)

Bottom Row (5, 78) to (192, 78)

(0, 79) I/O Tile (197, 79)

Memory (3, 77) (194, 77) Memory

Blocks (3, 76) (194, 76) Blocks
VersaTile (Core)
(3, 75)
(194, 75)
VersaTile (Core)

(194, 4)
VersaTile (Core) VersaTile (Core)
(3, 4)
(194, 3) Memory
(194, 2) Blocks
Memory (3, 3)
Blocks (3, 2)

(197, 1)
(0, 0) (197, 0)
I/O Tile UJTAG FlashROM

Top Row (5, 1) to (168, 1) Top Row (169, 1) to (192, 1)

Bottom Row (7, 0) to (165, 0)

Note: The vertical I/O tile coordinates are not shown. West-side coordinates are {(0, 2) to (2, 2)} to {(0, 77) to (2, 77)};
east-side coordinates are {(195, 2) to (197, 2)} to {(195, 77) to (197, 77)}.
Figure 1-9 • Array Coordinates for AGL600, AGLE600, A3P600, and A3PE600

Revision 5 17
FPGA Array Architecture in Low Power Flash Devices

Routing Architecture
The routing structure of low power flash devices is designed to provide high performance through a
flexible four-level hierarchy of routing resources: ultra-fast local resources; efficient long-line resources;
high-speed, very-long-line resources; and the high-performance VersaNet networks.
The ultra-fast local resources are dedicated lines that allow the output of each VersaTile to connect
directly to every input of the eight surrounding VersaTiles (Figure 1-10). The exception to this is that the
SET/CLR input of a VersaTile configured as a D-flip-flop is driven only by the VersaTile global network.
The efficient long-line resources provide routing for longer distances and higher-fanout connections.
These resources vary in length (spanning one, two, or four VersaTiles), run both vertically and
horizontally, and cover the entire device (Figure 1-11 on page 19). Each VersaTile can drive signals onto
the efficient long-line resources, which can access every input of every VersaTile. Routing software
automatically inserts active buffers to limit loading effects.
The high-speed, very-long-line resources, which span the entire device with minimal delay, are used to
route very long or high-fanout nets: length ±12 VersaTiles in the vertical direction and length ±16 in the
horizontal direction from a given core VersaTile (Figure 1-12 on page 19). Very long lines in low power
flash devices have been enhanced over those in previous ProASIC families. This provides a significant
performance boost for long-reach signals.
The high-performance VersaNet global networks are low-skew, high-fanout nets that are accessible from
external pins or internal logic. These nets are typically used to distribute clocks, resets, and other high-
fanout nets requiring minimum skew. The VersaNet networks are implemented as clock trees, and
signals can be introduced at any junction. These can be employed hierarchically, with signals accessing
every input of every VersaTile. For more details on VersaNets, refer to the "Global Resources in Low
Power Flash Devices" section on page 31.

Long Lines

L L L

Inputs
L L L
Ultra-Fast Local Lines
Output

(connects a VersaTile to the

adjacent VersaTile, I/O buffer,
or memory block)

L L L

Note: Input to the core cell for the D-flip-flop set and reset is only available via the VersaNet global
network connection.
Figure 1-10 • Ultra-Fast Local Lines Connected to the Eight Nearest Neighbors

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 ProASIC3 nano FPGA Fabric User’s Guide

Spans 4 VersaTiles Spans 1 VersaTile

Spans 2 VersaTiles

VersaTile
L L L L L L

L L L L L L

Spans 1 VersaTile
L L L L L L
Spans 2 VersaTiles
Spans 4 VersaTiles

L L L L L L

L L L L L L

Figure 1-11 • Efficient Long-Line Resources

High-Speed, Very-Long-Line Resources

Pad Ring

SRAM
I/O Ring

16×12 Block of VersaTiles

I/O Ring
Pad Ring

Pad Ring

Figure 1-12 • Very-Long-Line Resources

Revision 5 19
FPGA Array Architecture in Low Power Flash Devices

Related Documents

User’s Guides
Designer User's Guide
http://www.microsemi.com/soc/documents/designer_ug.pdf

List of Changes
The following table lists critical changes that were made in each revision of the chapter.

Date Changes Page

August 2012 The "I/O State of Newly Shipped Devices" section is new (SAR 39542). 14
July 2010 This chapter is no longer published separately with its own part number and version N/A
but is now part of several FPGA fabric user’s guides.
v1.4 IGLOO nano and ProASIC3 nano devices were added to Table 1-1 • Flash-Based 10
(December 2008) FPGAs.
Figure 1-2 • IGLOO and ProASIC3 nano Device Architecture Overview with Two I/O 11, 12
Banks (applies to 10 k and 30 k device densities, excluding IGLOO PLUS devices)
through Figure 1-5 • IGLOO, IGLOO nano, ProASIC3 nano, and ProASIC3/L Device
Architecture Overview with Four I/O Banks (AGL600 device is shown) are new.
Table 1-4 • IGLOO nano and ProASIC3 nano Array Coordinates is new. 17
v1.3 The title of this document was changed from "Core Architecture of IGLOO and 9
(October 2008) ProASIC3 Devices" to "FPGA Array Architecture in Low Power Flash Devices."
The "FPGA Array Architecture Support" section was revised to include new families 10
and make the information more concise.
Table 1-2 • IGLOO and ProASIC3 Array Coordinates was updated to include Military 16
ProASIC3/EL and RT ProASIC3 devices.
v1.2 The following changes were made to the family descriptions in Table 1-1 • Flash- 10
(June 2008) Based FPGAs:
• ProASIC3L was updated to include 1.5 V.
• The number of PLLs for ProASIC3E was changed from five to six.
v1.1 Table 1-1 • Flash-Based FPGAs and the accompanying text was updated to include 10
(March 2008) the IGLOO PLUS family. The "IGLOO Terminology" section and "Device Overview"
section are new.
The "Device Overview" section was updated to note that 15 k devices do not 11
support SRAM or FIFO.
Figure 1-6 • IGLOO PLUS Device Architecture Overview with Four I/O Banks is 13
new.
Table 1-2 • IGLOO and ProASIC3 Array Coordinates was updated to add A3P015 16
and AGL015.
Table 1-3 • IGLOO PLUS Array Coordinates is new. 16

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2 – Low Power Modes in ProASIC3/E and
ProASIC3 nano FPGAs

Introduction
The demand for low power systems and semiconductors, combined with the strong growth observed for
value-based FPGAs, is driving growing demand for low power FPGAs. For portable and battery-operated
applications, power consumption has always been the greatest challenge. The battery life of a system
and on-board devices has a direct impact on the success of the product. As a result, FPGAs used in
these applications should meet low power consumption requirements.
ProASIC®3/E and ProASIC3 nano FPGAs offer low power consumption capability inherited from their
nonvolatile and live-at-power-up (LAPU) flash technology. This application note describes the power
consumption and how to use different power saving modes to further reduce power consumption for
power-conscious electronics design.

Power Consumption Overview

In evaluating the power consumption of FPGA technologies, it is important to consider it from a system
point of view. Generally, the overall power consumption should be based on static, dynamic, inrush, and
configuration power. Few FPGAs implement ways to reduce static power consumption utilizing sleep
modes.
SRAM-based FPGAs use volatile memory for their configuration, so the device must be reconfigured
after each power-up cycle. Moreover, during this initialization state, the logic could be in an indeterminate
state, which might cause inrush current and power spikes. More complex power supplies are required to
eliminate potential system power-up failures, resulting in higher costs. For portable electronics requiring
frequent power-up and -down cycles, this directly affects battery life, requiring more frequent recharging
or replacement.
SRAM-Based FPGA Total Power Consumption = Pstatic + Pdynamic + Pinrush + Pconfig
EQ 1
ProASIC3/E Total Power Consumption = Pstatic + Pdynamic
EQ 2
Unlike SRAM-based FPGAs, Microsemi flash-based FPGAs are nonvolatile and do not require power-up
configuration. Additionally, Microsemi nonvolatile flash FPGAs are live at power-up and do not require
additional support components. Total power consumption is reduced as the inrush current and
configuration power components are eliminated.
Note that the static power component can be reduced in flash FPGAs (such as the ProASIC3/E devices)
by entering User Low Static mode or Sleep mode. This leads to an extremely low static power
component contribution to the total system power consumption.
The following sections describe the usage of Static (Idle) mode to reduce the power component, User
Low Static mode to reduce the static power component, and Sleep mode and Shutdown mode to achieve
a range of power consumption when the FPGA or system is idle. Table 2-1 on page 22 summarizes the
different low power modes offered by ProASIC3/E devices.

Revision 5 21
Low Power Modes in ProASIC3/E and ProASIC3 nano FPGAs

Table 2-1 • ProASIC3/E/nano Low Power Modes Summary

Mode Power Supplies / Clock Status Needed to Start Up
Active On – All, clock N/A (already active)
Off – None
Static (Idle) On – All Initiate clock source.
Off – No active clock in FPGA No need to initialize volatile
contents.
Optional: Enter User Low Static (Idle) Mode by enabling
ULSICC macro to further reduce power consumption by
powering down FlashROM.
Sleep On – VCCI Need to turn on core.
Off – VCC (core voltage), VJTAG (JTAG DC voltage), Load states from external
and VPUMP (programming voltage) memory.
LAPU enables immediate operation when power As needed, restore volatile
returns. contents from external memory.
Optional: Save state of volatile contents in external
memory.
Shutdown On – None Need to turn on VCC, VCCI.
Off – All power supplies
Applicable to all ProASIC3 nano devices, cold-sparing
and hot-insertion allow the device to be powered down
without bringing down the system. LAPU enables
immediate operation when power returns.

Static (Idle) Mode

In Static (Idle) mode, the clock inputs are not switching and the static power consumption is the minimum
power required to keep the device powered up. In this mode, I/Os are only drawing the minimum leakage
current specified in the datasheet. Also, in Static (Idle) mode, embedded SRAM, I/Os, and registers
retain their values, so the device can enter and exit this mode without any penalty.
If the embedded PLLs are used as the clock source, Static (Idle) mode can be entered easily by pulling
LOW the PLL POWERDOWN pin (active-low). By pulling the PLL POWERDOWN pin to LOW, the PLL is
turned off. Refer to Figure 2-1 on page 23 for more information.

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 ProASIC3 nano FPGA Fabric User’s Guide

CLKA GLA
GLB
POWERDOWN YB
GLC
YC
LOCK

OADIV[4:0]*
OAMUX[2:0]*
DLYGLA[4:0]*
OBDIV[4:0]*
OBMUX[2:0]*
DLYYB[4:0]*
DLYGLB[4:0]*
OCDIV[4:0]*
OCMUX[2:0]*
DLYYC[4:0]*
DLYGLC[4:0]*
FINDIV[6:0]*
FBDIV[6:0]*
FBDLY[4:0]*
FBSEL[1:0]*
XDLYSEL*
VCOSEL[2:0]*

Figure 2-1 • CCC/PLL Macro

User Low Static (Idle) Mode

User Low Static (Idle) mode is an advanced feature supported by ProASIC3/E devices to reduce static
(idle) power consumption. Entering and exiting this mode is made possible using the ULSICC macro by
setting its value to disable/enable the User Low Static (Idle) mode. Under typical operating conditions,
characterization results show up to 25% reduction of the static (idle) power consumption. The greatest
power savings in terms of percentage are seen in the smaller members of the ProASIC3 family. The
active-high control signal for User Low Static (Idle) mode can be generated by internal or external logic.
When the device is operating in User Low Static (Idle) mode, FlashROM functionality is temporarily
disabled to save power. If FlashROM functionality is needed, the device can exit User Low Static mode
temporarily and re-enter the mode once the functionality is no longer needed.
To utilize User Low Static (Idle) mode, simply instantiate the ULSICC macro (Table 2-2 on page 24) in
your design, and connect the input port to either an internal logic signal or a device package pin, as
illustrated in Figure 2-2 on page 24 or Figure 2-3 on page 25, respectively. The attribute is used so the
Synplify® synthesis tool will not optimize the instance with no output port.
This mode can be used to lower standard static (idle) power consumption when the FlashROM feature is
not needed. Configuring the device to enter User Low Static (Idle) mode is beneficial when the FPGA
enters and exits static mode frequently and lowering power consumption as much as possible is desired.
The device is still functional, and data is retained in this state so the device can enter and exit this mode
quickly, resulting in reduced total power consumption. The device can also stay in User Low Static mode
when the FlashROM feature is not used in the device.

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Low Power Modes in ProASIC3/E and ProASIC3 nano FPGAs

Table 2-2 • Using ULSICC Macro*

VHDL Verilog
COMPONENT ULSICC module ULSICC(LSICC);
port ( input LSICC;
LSICC : in STD_ULOGIC); endmodule
END COMPONENT;
Example:
Example: ULSICC U1(.LSICC(myInputSignal))
COMPONENT ULSICC /* synthesis syn_noprune=1 */;
port (
LSICC : in STD_ULOGIC);
END COMPONENT;

attribute syn_noprune : boolean;

attribute syn_noprune of u1 : label is true;
u1: ULSICC port map(myInputSignal);
Note: *Supported in Libero® software v7.2 and newer versions.

ProASIC3/E Device

Internal
Signal

Programming
Circuitry

ULSICC
FlashROM
Macro

Figure 2-2 • User Low Static (Idle) Mode Application—Internal Control Signal

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 ProASIC3 nano FPGA Fabric User’s Guide

ProASIC3/E/nano Device

External
Signal

Programming
Circuitry

ULSICC
FlashROM
Macro
Any User's I/O

Figure 2-3 • User Low Static (Idle) Mode Application—External Control Signal

Normal Operation User Low Static Mode Normal Operation

ULSICC Signal

1 μs 1 μs

Figure 2-4 • User Low Static (Idle) Mode Timing Diagram

Sleep Mode
ProASIC3/E and ProASIC3 nano FPGAs support Sleep mode when device functionality is not required.
In Sleep mode, the VCC (core voltage), VJTAG (JTAG DC voltage), and VPUMP (programming voltage)
are grounded, resulting in the FPGA core being turned off to reduce power consumption. While the
ProASIC3/E device is in Sleep mode, the rest of the system is still operating and driving the input buffers
of the ProASIC3/E device. The driven inputs do not pull up power planes, and the current draw is limited
to a minimal leakage current.
Table 2-3 shows the status of the power supplies in Sleep mode. When a power supply is powered off,
the corresponding power pin can be left floating or grounded.
Table 2-3 • Sleep Mode—Power Supply Requirements for ProASIC3/E/nano Devices
Power Supplies ProASIC3/E/nano Device
VCC Powered off
VCCI = VMV Powered on
VJTAG Powered off
VPUMP Powered off

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Low Power Modes in ProASIC3/E and ProASIC3 nano FPGAs

Table 2-4 shows the current draw in Sleep mode for an A3P250 device with the following test conditions:
VCCI = VMV; VCC = VJTAG = VPUMP = GND.

Table 2-4 • A3P250 Current Draw in Sleep Mode

A3P250
Typical Conditions ICCI (µA) ICCI (µA) per Bank
VCCI = 3.3 V 31.57 7.89
VCCI = 2.5 V 23.96 5.99
VCCI = 1.8 V 17.32 4.33
VCCI = 1.5 V 14.46 3.62
ICC FPGA Core 0.0 0.0
Leakage Current per I/O 0.1 0.1
VPUMP 0.0 0.0
Note: The data in this table were taken under typical conditions and are based on characterization. The
data is not guaranteed.

Table 2-5 shows the current draw in Sleep mode for an A3PE600 device with the following test
conditions: VCCI = VMV; VCC = VJTAG = VPUMP = GND.
Table 2-5 • A3PE600 Current Draw in Sleep Mode
A3PE600
Typical Conditions ICCI (µA) ICCI (µA) per Bank
VCCI = 3.3 V 59.85 7.48
VCCI = 2.5 V 45.50 5.69
VCCI = 1.8 V 32.98 4.12
VCCI = 1.5 V 27.66 3.46
VCCI = 0 V or Floating 0.0 0.0
ICC FPGA Core 0.0 0.0
Leakage Current per I/O 0.1 0.1
IPUMP 0.0 0.0
Note: The data in this table were taken under typical conditions and are based on characterization. The
data is not guaranteed.

ProASIC3/E and ProASIC3 nano devices were designed such that before device power-up, all I/Os are
in tristate mode. The I/Os will remain tristated during power-up until the last voltage supply (VCC or
VCCI) is powered to its functional level. After the last supply reaches the functional level, the outputs will
exit the tristate mode and drive the logic at the input of the output buffer. The behavior of user I/Os is
independent of the VCC and VCCI sequence or the state of other FPGA voltage supplies (VPUMP and
VJTAG). During power-down, device I/Os become tristated once the first power supply (VCC or VCCI)
drops below its brownout voltage level. The I/O behavior during power-down is also independent of
voltage supply sequencing.
Figure 2-5 on page 27 shows a timing diagram for the FPGA core entering the activation and
deactivation trip points for a typical application when the VCC power supply ramp rate is 100 µs (ramping
from 0 V to 1.5 V). This is, in fact, the timing diagram for the FPGA entering and exiting Sleep mode, as it
is dependent on powering down or powering up VCC. Depending on the ramp rate of the power supply
and board-level configurations, the user can easily calculate how long it takes for the core to become
active or inactive. For more information, refer to the "Power-Up/-Down Behavior of Low Power Flash
Devices" section on page 307.

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 ProASIC3 nano FPGA Fabric User’s Guide

VCC
Deactivation Trip Point
VCC = 1.5 V Vd = 0.75 ± 0.25 V

Activation Trip Point

Va = 0.85 ± 0.25 V

t
Sleep Mode

Figure 2-5 • Entering and Exiting Sleep Mode—Typical Timing Diagram

Shutdown Mode
For all ProASIC3/E and ProASIC3 nano devices, shutdown mode can be entered by turning off all power
supplies when device functionality is not needed. Cold-sparing and hot-insertion features in ProASIC3
nano devices enable the device to be powered down without turning off the entire system. When power
returns, the live at power-up feature enables immediate operation of the device.

Using Sleep Mode or Shutdown Mode in the System

Depending on the power supply and components used in an application, there are many ways to turn the
power supplies connected to the device on or off. For example, Figure 2-6 shows how a microprocessor
is used to control a power FET. It is recommended that power FETs with low on resistance be used to
perform the switching action.

1.5 V Power
Supply

P-Channel
Power FET

Microprocessor
Power On/Off VCC, VJTAG, and VPUMP Pins
ProASIC3/E/nano
Control Signal

Figure 2-6 • Controlling Power On/Off State Using Microprocessor and Power FET

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Low Power Modes in ProASIC3/E and ProASIC3 nano FPGAs

Alternatively, Figure 2-7 shows how a microprocessor can be used with a voltage regulator's shutdown
pin to turn the power supplies connected to the device on or off.

Microprocessor

Shutdown Shutdown
Control Signal Control Signal
for VCCI for VCC, VJTAG, and VPUMP

VCCI Power Pin

Power Voltage ProASIC3/E/nano
Supply Regulator
VCC, VJTAG, and VPUMP
Power Pins

Figure 2-7 • Controlling Power On/Off State Using Microprocessor and Voltage Regulator

Though Sleep mode or Shutdown mode can be used to save power, the content of the SRAM and the
state of the registers is lost when power is turned off if no other measure is taken. To keep the original
contents of the device, a low-cost external serial EEPROM can be used to save and restore the device
contents when entering and exiting Sleep mode. In the Embedded SRAM Initialization Using External
Serial EEPROM application note, detailed information and a reference design are provided to initialize
the embedded SRAM using an external serial EEPROM. The user can easily customize the reference
design to save and restore the FPGA state when entering and exiting Sleep mode. The microcontroller
will need to manage this activity, so before powering down VCC, the data must be read from the FPGA
and stored externally. Similarly, after the FPGA is powered up, the microcontroller must allow the FPGA
to load the data from external memory and restore its original state.

Conclusion
Microsemi ProASIC3/E and ProASIC3 nano FPGAs inherit low power consumption capability from their
nonvolatile and live-at-power-up flash-based technology. Power consumption can be reduced further
using the Static (Idle), User Low Static (Idle), Sleep, or Shutdown power modes. All these features result
in a low-power, cost-effective, single-chip solution designed specifically for power-sensitive electronics
applications.

Related Documents

Application Notes
Embedded SRAM Initialization Using External Serial EEPROM
http://www.microsemi.com/soc/documents/EmbeddedSRAMInit_AN.pdf

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List of Changes
The following table lists critical changes that were made in each revision of the chapter.

Date Changes Page

June 2011 Table 2-1 • ProASIC3/E/nano Low Power Modes Summary and the "Shutdown 22, 27
Mode" section were revised to remove reference to ProASIC3/E devices (SAR
24526).
July 2010 This chapter is no longer published separately with its own part number and version N/A
but is now part of several FPGA fabric user’s guides.
v1.2 References to ProASIC3 nano devices were added to the document where N/A
(August 2008) appropriate.
VJTAG and VPUMP were noted as "Off" in the Sleep Mode section of Table 2-1 • 22
ProASIC3/E/nano Low Power Modes Summary.
The "Sleep Mode" section, including Table 2-3 • Sleep Mode—Power Supply 25
Requirements for ProASIC3/E/nano Devices, was revised to state that VJTAG and
VPUMP are powered off during Sleep mode.
The text above Table 2-4 • A3P250 Current Draw in Sleep Mode and Table 2-5 • 26
A3PE600 Current Draw in Sleep Mode was revised to state "VCC = VJTAG =
VPUMP = GND."
Figure 2-6 • Controlling Power On/Off State Using Microprocessor and Power FET 27, 28
and Figure 2-7 • Controlling Power On/Off State Using Microprocessor and Voltage
Regulator were revised to show shutdown of VJTAG and VPUMP during Sleep
mode.
v1.1 The part number for this document was changed from 51700094-002-0 to N/A
(March 2008) 51700094-003-1.
v1.0 The Power Supplies / Clock Status description was updated for Static (Idle) in 22
(January 2008) Table 2-1 • ProASIC3/E/nano Low Power Modes Summary.
Programming information was updated in the "User Low Static (Idle) Mode" 23
section.
51900138-2/10.06 The "User Low Static (Idle) Mode" section was updated to include information 23
about allowing programming in the ULSICC mode.
Figure 2-2 • User Low Static (Idle) Mode Application—Internal Control Signal was 24
updated.
Figure 2-3 • User Low Static (Idle) Mode Application—External Control Signal was 25
updated.
51900138-1/6.06 In Table 2-4 • A3P250 Current Draw in Sleep Mode, "VCCI = 1.5 V" was changed 26
from 3.6158 to 3.62.
In Table 2-5 • A3PE600 Current Draw in Sleep Mode, "VCCI = 2.5 V" was changed 26
from 5.6875 to 3.69.

Revision 5 29
3 – Global Resources in Low Power Flash Devices

Introduction
IGLOO, Fusion, and ProASIC3 FPGA devices offer a powerful, low-delay VersaNet global network
scheme and have extensive support for multiple clock domains. In addition to the Clock Conditioning
Circuits (CCCs) and phase-locked loops (PLLs), there is a comprehensive global clock distribution
network called a VersaNet global network. Each logical element (VersaTile) input and output port has
access to these global networks. The VersaNet global networks can be used to distribute low-skew clock
signals or high-fanout nets. In addition, these highly segmented VersaNet global networks contain spines
(the vertical branches of the global network tree) and ribs that can reach all the VersaTiles inside their
region. This allows users the flexibility to create low-skew local clock networks using spines. This
document describes VersaNet global networks and discusses how to assign signals to these global
networks and spines in a design flow. Details concerning low power flash device PLLs are described in
the "Clock Conditioning Circuits in Low Power Flash Devices and Mixed Signal FPGAs" section on
page 61. This chapter describes the low power flash devices’ global architecture and uses of these global
networks in designs.

Global Architecture
Low power flash devices offer powerful and flexible control of circuit timing through the use of global
circuitry. Each chip has up to six CCCs, some with PLLs.
• In IGLOOe, ProASIC3EL, and ProASIC3E devices, all CCCs have PLLs—hence, 6 PLLs per
device (except the PQ208 package, which has only 2 PLLs).
• In IGLOO, IGLOO nano, IGLOO PLUS, ProASIC3, and ProASIC3L devices, the west CCC
contains a PLL core (except in 10 k through 30 k devices).
• In Fusion devices, the west CCC also contains a PLL core. In the two larger devices (AFS600 and
AFS1500), the west and east CCCs each contain a PLL.
Refer to Table 4-6 on page 84 for details. Each PLL includes delay lines, a phase shifter (0°, 90°, 180°,
270°), and clock multipliers/dividers. Each CCC has all the circuitry needed for the selection and
interconnection of inputs to the VersaNet global network. The east and west CCCs each have access to
three chip global lines on each side of the chip (six chip global lines total). The CCCs at the four corners
each have access to three quadrant global lines in each quadrant of the chip (except in 10 k through 30 k
gate devices).
The nano 10 k, 15 k, and 20 k devices support four VersaNet global resources, and 30 k devices support
six global resources. The 10 k through 30 k devices have simplified CCCs called CCC-GLs.
The flexible use of the VersaNet global network allows the designer to address several design
requirements. User applications that are clock-resource-intensive can easily route external or gated
internal clocks using VersaNet global routing networks. Designers can also drastically reduce delay
penalties and minimize resource usage by mapping critical, high-fanout nets to the VersaNet global
network.
Note: Microsemi recommends that you choose the appropriate global pin and use the appropriate global
resource so you can realize these benefits.
The following sections give an overview of the VersaNet global network, the structure of the global
network, access point for the global networks, and the clock aggregation feature that enables a design to
have very low clock skew using spines.

Revision 5 31
Global Resources in Low Power Flash Devices

Global Resource Support in Flash-Based Devices

The flash FPGAs listed in Table 3-1 support the global resources and the functions described in this
document.

Table 3-1 • Flash-Based FPGAs

Series Family* Description
IGLOO IGLOO Ultra-low power 1.2 V to 1.5 V FPGAs with Flash*Freeze technology
IGLOOe Higher density IGLOO FPGAs with six PLLs and additional I/O standards
IGLOO PLUS IGLOO FPGAs with enhanced I/O capabilities
IGLOO nano The industry’s lowest-power, smallest-size solution
ProASIC3 ProASIC3 Low power, high-performance 1.5 V FPGAs
ProASIC3E Higher density ProASIC3 FPGAs with six PLLs and additional I/O standards
ProASIC3 nano Lowest-cost solution with enhanced I/O capabilities
ProASIC3L ProASIC3 FPGAs supporting 1.2 V to 1.5 V with Flash*Freeze technology
RT ProASIC3 Radiation-tolerant RT3PE600L and RT3PE3000L
Military ProASIC3/EL Military temperature A3PE600L, A3P1000, and A3PE3000L
Automotive ProASIC3 ProASIC3 FPGAs qualified for automotive applications
Fusion Fusion Mixed signal FPGA integrating ProASIC3 FPGA fabric, programmable
analog block, support for ARM® Cortex™-M1 soft processors, and flash
memory into a monolithic device
Note: *The device names link to the appropriate datasheet, including product brief, DC and switching characteristics,
and packaging information.

IGLOO Terminology
In documentation, the terms IGLOO series and IGLOO devices refer to all of the IGLOO products as
listed in Table 3-1. Where the information applies to only one product line or limited devices, these
exclusions will be explicitly stated.

ProASIC3 Terminology
In documentation, the terms ProASIC3 series and ProASIC3 devices refer to all of the ProASIC3 devices
as listed in Table 3-1. Where the information applies to only one product line or limited devices, these
exclusions will be explicitly stated.
To further understand the differences between the IGLOO and ProASIC3 devices, refer to the Industry’s
Lowest Power FPGAs Portfolio.

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VersaNet Global Network Distribution

One of the architectural benefits of low power flash architecture is the set of powerful, low-delay
VersaNet global networks that can access the VersaTiles, SRAM, and I/O tiles of the device. Each device
offers a chip global network with six global lines (except for nano 10 k, 15 k, and 20 k gate devices) that
are distributed from the center of the FPGA array. In addition, each device (except the 10 k through 30 k
gate device) has four quadrant global networks, each consisting of three quadrant global net resources.
These quadrant global networks can only drive a signal inside their own quadrant. Each VersaTile has
access to nine global line resources—three quadrant and six chip-wide (main) global networks—and a
total of 18 globals are available on the device (3 × 4 regional from each quadrant and 6 global).
Figure 3-1 shows an overview of the VersaNet global network and device architecture for devices 60 k
and above. Figure 3-2 and Figure 3-3 on page 34 show simplified VersaNet global networks.
The VersaNet global networks are segmented and consist of spines, global ribs, and global multiplexers
(MUXes), as shown in Figure 3-1. The global networks are driven from the global rib at the center of the
die or quadrant global networks at the north or south side of the die. The global network uses the MUX
trees to access the spine, and the spine uses the clock ribs to access the VersaTile. Access is available
to the chip or quadrant global networks and the spines through the global MUXes. Access to the spine
using the global MUXes is explained in the "Spine Architecture" section on page 41.
These VersaNet global networks offer fast, low-skew routing resources for high-fanout nets, including
clock signals. In addition, these highly segmented global networks offer users the flexibility to create low-
skew local clock networks using spines for up to 252 internal/external clocks or other high-fanout nets in
low power flash devices. Optimal usage of these low-skew networks can result in significant
improvement in design performance.

Quadrant Global Pads High-Performance

T1 T2 T3 Global Network
Pad Ring
Pad Ring

I/ORing
Top Spine

Chip (main)
Chip (main)
Global Pads
Global Pads

Spine

Ribs
I/O Ring

Bottom Spine
Scope of Spine
(shaded area
plus local RAMs
Spine-Selection and I/Os)
MUX

Embedded
RAM Blocks
Pad Ring

B1 B2 B3 Logic Tiles

Note: Not applicable to 10 k through 30 k gate devices

Figure 3-1 • Overview of VersaNet Global Network and Device Architecture

Revision 5 33
Global Resources in Low Power Flash Devices

2 2 2 2

Chip (main) Global

Network
2
2

Global Drivers Global Drivers

Figure 3-2 • Simplified VersaNet Global Network (30 k gates and below)

North Quadrant Global Network

CCC CCC
Quadrant Global Spine

3 3 3 3

Chip (main)
Global
6 6 Network 6 6
3 CCC
3
CCC
6 6 6 6
Chip Global Spine

3 3 3 3

CCC CCC
South Quadrant Global Network

Figure 3-3 • Simplified VersaNet Global Network (60 k gates and above)

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Chip and Quadrant Global I/Os

The following sections give an overview of naming conventions and other related I/O information.

Naming of Global I/Os

In low power flash devices, the global I/Os have access to certain clock conditioning circuitry and have
direct access to the global network. Additionally, the global I/Os can be used as regular I/Os, since they
have identical capabilities to those of regular I/Os. Due to the comprehensive and flexible nature of the
I/Os in low power flash devices, a naming scheme is used to show the details of the I/O. The global I/O
uses the generic name Gmn/IOuxwByVz. Note that Gmn refers to a global input pin and IOuxwByVz
refers to a regular I/O Pin, as these I/Os can be used as either global or regular I/Os. Refer to the I/O
Structures chapter of the user’s guide for the device that you are using for more information on this
naming convention.
Figure 3-4 represents the global input pins connection. It shows all 54 global pins available to
access the 18 global networks in ProASIC3E families.

Quadrant Global
+
Quadrant Global
Location A + + Location B
GAAO/IOuxwByVz + GBAO/IOuxwByVz
GAA1/IOuxwByVz + GBA1/IOuxwByVz
GAA2/IOuxwByVz GBA2/IOuxwByVz
GABO/IOuxwByVz +
+
GBBO/IOuxwByVz
GAB1/IOuxwByVz
GBB1/IOuxwByVz
GAB2/IOuxwByVz + + GBB2/IOuxwByVz
GACO/IOuxwByVz
GAC1/IOuxwByVz Bankx Bankx + GBCO/IOuxwByVz
GAC2/IOuxwByVz + GBC1/IOuxwByVz
GBC2/IOuxwByVz
+
3
3 3 3
3
Quadrant Global Spine

Bankx
Bankx

+
+

Chip Global
+
Chip Global +
Location F Location C
GFAO/IOuxwByVz GCAO/IOuxwByVz
6 6 6
GFA1/IOuxwByVz GCA1/IOuxwByVz
+
+ 3 6
GFA2/IOuxwByVz + GCA2/IOuxwByVz
GFBO/IOuxwByVz + GCBO/IOuxwByVz
GFB1/IOuxwByVz 6 3 GCB1/IOuxwByVz
GFB2/IOuxwByVz 6 6 6 GCB2/IOuxwByVz
GFCO/IOuxwByVz
Chip Global Spine

GCCO/IOuxwByVz
+
GFC1/IOuxwByVz +
GCC1/IOuxwByVz
Bankx
Bankx

GFC2/IOuxwByVz
+
+ GCC2/IOuxwByVz

3
3 3 3 3
3

+
Quadrant Global Quadrant Global
Location E + Bankx Bankx
+ Location D
GEAO/IOuxwByVz +
GDAO/IOuxwByVz
GEAC/IOuxwByVz + GDA1/IOuxwByVz
GEA2/IOuxwByVz GDA2/IOuxwByVz
GEBO/IOuxwByVz + +
GDBO/IOuxwByVz
GEB1/IOuxwByVz + CCC w it h PLL GDB1/IOuxwByVz
GEB2/IOuxwByVz + GDB2/IOuxwByVz
GECO/IOuxwByVz CCC w it h or w it hout PLL GDCO/IOuxwByVz
GEC1/IOuxwByVz + +
GDC1/IOuxwByVz
GEC2/IOuxwByVz + GDC2/IOuxwByVz
CCC w it hout PLL

Figure 3-4 • Global Connections Details

Revision 5 35
Global Resources in Low Power Flash Devices

Figure 3-5 shows more detailed global input connections. It shows the global input pins connection to the
northwest quadrant global networks. Each global buffer, as well as the PLL reference clock, can be
driven from one of the following:
• 3 dedicated single-ended I/Os using a hardwired connection
• 2 dedicated differential I/Os using a hardwired connection (not supported for IGLOO nano or
ProASIC3 nano devices)
• The FPGA core

Each shaded box represents an

INBUF or INBUF_LVDS/LVPECL
To Core
macro, as appropriate.

Sample Pin Names

1
GAA0/IO0NDB0V0

1
GAA1/IO00PDB0V0 +

Source for CCC

(CLKA or CLKB or CLKC)

Routed Clock
1 2
GAA2/IO13PDB7V1 + (from FPGA core)

GAA[0:2]: GA represents global in the northwest corner

of the device. A[0:2]: designates specific A clock source.

Note: Differential inputs are not supported for IGLOO nano or ProASIC3 nano devices.
Figure 3-5 • Global I/O Overview

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 ProASIC3 nano FPGA Fabric User’s Guide

Figure 3-6 shows all nine global inputs for the location A connected to the top left quadrant global
network via CCC.

GAAO/
IOuxwByVz

GAA1/
IOuxwByVz MUX CLKA Quadrant Global for CLKA

GAA2/
IOuxwByVz

GABO/
IOuxwByVz

GAB1/
IOuxwByVz MUX CLKB CCC Quadrant Global for CLKB

GAB2/
IOuxwByVz

GACO/
IOuxwByVz

GAC1/ MUX
IOuxwByVz CLKC Quadrant Global for CLKC

GAC2/
IOuxwByVz

Figure 3-6 • Global Inputs

Since each bank can have a different I/O standard, the user should be careful to choose the correct
global I/O for the design. There are 54 global pins available to access 18 global networks. For the single-
ended and voltage-referenced I/O standards, you can use any of these three available I/Os to access the
global network. For differential I/O standards such as LVDS and LVPECL, the I/O macro needs to be
placed on (A0, A1), (B0, B1), (C0, C1), or a similar location. The unassigned global I/Os can be used
as regular I/Os. Note that pin names starting with GF and GC are associated with the chip global
networks, and GA, GB, GD, and GE are used for quadrant global networks. Table 3-2 on page 38 and
Table 3-3 on page 39 show the general chip and quadrant global pin names.

Revision 5 37
Global Resources in Low Power Flash Devices

Table 3-2 • Chip Global Pin Name

I/O Type Beginning of I/O Name Notes
Single-Ended GFAO/IOuxwByVz Only one of the I/Os can be directly connected to a chip
GFA1/IOuxwByVz global at a time.
GFA2/IOuxwByVz
GFBO/IOuxwByVz Only one of the I/Os can be directly connected to a chip
GFB1/IOuxwByVz global at a time.
GFB2/IOuxwByVz
GFC0/IOuxwByVz Only one of the I/Os can be directly connected to a chip
GFC1/IOuxwByVz global at a time.
GFC2/IOuxwByVz
GCAO/IOuxwByVz Only one of the I/Os can be directly connected to a chip
GCA1/IOuxwByVz global at a time.
GCA2/IOuxwByVz
GCBO/IOuxwByVz Only one of the I/Os can be directly connected to a chip
GCB1/IOuxwByVz global at a time.
GCB2/IOuxwByVz
GCC0/IOuxwByVz Only one of the I/Os can be directly connected to a chip
GCC1/IOuxwByVz global at a time.
GCC2/IOuxwByVz
Differential I/O Pairs GFAO/IOuxwByVz The output of the different pair will drive the chip global.
GFA1/IOuxwByVz
GFBO/IOuxwByVz The output of the different pair will drive the chip global.
GFB1/IOuxwByVz
GFCO/IOuxwByVz The output of the different pair will drive the chip global.
GFC1/IOuxwByVz
GCAO/IOuxwByVz The output of the different pair will drive the chip global.
GCA1/IOuxwByVz
GCBO/IOuxwByVz The output of the different pair will drive the chip global.
GCB1/IOuxwByVz
GCCO/IOuxwByVz The output of the different pair will drive the chip global.
GCC1/IOuxwByVz
Note: Only one of the I/Os can be directly connected to a quadrant at a time.

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Table 3-3 • Quadrant Global Pin Name

I/O Type Beginning of I/O Name Notes
Single-Ended GAAO/IOuxwByVz Only one of the I/Os can be directly connected to a
GAA1/IOuxwByVz quadrant global at a time
GAA2/IOuxwByVz
GABO/IOuxwByVz Only one of the I/Os can be directly connected to a
GAB1/IOuxwByVz quadrant global at a time.
GAB2/IOuxwByVz

GAC0/IOuxwByVz Only one of the I/Os can be directly connected to a

GAC1/IOuxwByVz quadrant global at a time.
GAC2/IOuxwByVz

GBAO/IOuxwByVz Only one of the I/Os can be directly connected to a global

GBA1/IOuxwByVz at a time.
GBA2/IOuxwByVz

GBBO/IOuxwByVz Only one of the I/Os can be directly connected to a global

GBB1/IOuxwByVz at a time.
GBB2/IOuxwByVz

GBC0/IOuxwByVz Only one of the I/Os can be directly connected to a global

GBC1/IOuxwByVz at a time.
GBC2/IOuxwByVz

GDAO/IOuxwByVz Only one of the I/Os can be directly connected to a global

GDA1/IOuxwByVz at a time.
GDA2/IOuxwByVz

GDBO/IOuxwByVz Only one of the I/Os can be directly connected to a global

GDB1/IOuxwByVz at a time.
GDB2/IOuxwByVz

GDC0/IOuxwByVz Only one of the I/Os can be directly connected to a global

GDC1/IOuxwByVz at a time.
GDC2/IOuxwByVz

GEAO/IOuxwByVz Only one of the I/Os can be directly connected to a global

GEA1/IOuxwByVz at a time.
GEA2/IOuxwByVz

GEBO/IOuxwByVz Only one of the I/Os can be directly connected to a global

GEB1/IOuxwByVz at a time.
GEB2/IOuxwByVz

GEC0/IOuxwByVz Only one of the I/Os can be directly connected to a global

GEC1/IOuxwByVz at a time.
GEC2/IOuxwByVz

Note: Only one of the I/Os can be directly connected to a quadrant at a time.

Revision 5 39
Global Resources in Low Power Flash Devices

Table 3-3 • Quadrant Global Pin Name (continued)

Differential I/O Pairs GAAO/IOuxwByVz The output of the different pair will drive the global.
GAA1/IOuxwByVz
GABO/IOuxwByVz The output of the different pair will drive the global.
GAB1/IOuxwByVz
GACO/IOuxwByVz The output of the different pair will drive the global.
GAC1/IOuxwByVz
GBAO/IOuxwByVz The output of the different pair will drive the global.
GBA1/IOuxwByVz
GBBO/IOuxwByVz The output of the different pair will drive the global.
GBB1/IOuxwByVz
GBCO/IOuxwByVz The output of the different pair will drive the global.
GBC1/IOuxwByVz
GDAO/IOuxwByVz The output of the different pair will drive the global.
GDA1/IOuxwByVz
GDBO/IOuxwByVz The output of the different pair will drive the global.
GDB1/IOuxwByVz
GDCO/IOuxwByVz The output of the different pair will drive the global.
GDC1/IOuxwByVz
GEAO/IOuxwByVz The output of the different pair will drive the global.
GEA1/IOuxwByVz
GEBO/IOuxwByVz The output of the different pair will drive the global.
GEB1/IOuxwByVz
GECO/IOuxwByVz The output of the different pair will drive the global.
GEC1/IOuxwByVz
Note: Only one of the I/Os can be directly connected to a quadrant at a time.

Unused Global I/O Configuration

The unused clock inputs behave similarly to the unused Pro I/Os. The Microsemi Designer software
automatically configures the unused global pins as inputs with pull-up resistors if they are not used as
regular I/O.

I/O Banks and Global I/O Standards

In low power flash devices, any I/O or internal logic can be used to drive the global network. However,
only the global macro placed at the global pins will use the hardwired connection between the I/O and
global network. Global signal (signal driving a global macro) assignment to I/O banks is no different from
regular I/O assignment to I/O banks with the exception that you are limited to the pin placement location
available. Only global signals compatible with both the VCCI and VREF standards can be assigned to the
same bank.

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Spine Architecture
The low power flash device architecture allows the VersaNet global networks to be segmented. Each of
these networks contains spines (the vertical branches of the global network tree) and ribs that can reach
all the VersaTiles inside its region. The nine spines available in a vertical column reside in global
networks with two separate regions of scope: the quadrant global network, which has three spines, and
the chip (main) global network, which has six spines. Note that the number of quadrant globals and
globals/spines per tree varies depending on the specific device. Refer to Table 3-4 for the clocking
resources available for each device. The spines are the vertical branches of the global network tree,
shown in Figure 3-3 on page 34. Each spine in a vertical column of a chip (main) global network is further
divided into two spine segments of equal lengths: one in the top and one in the bottom half of the die
(except in 10 k through 30 k gate devices).
Top and bottom spine segments radiating from the center of a device have the same height. However,
just as in the ProASICPLUS® family, signals assigned only to the top and bottom spine cannot access the
middle two rows of the die. The spines for quadrant clock networks do not cross the middle of the die and
cannot access the middle two rows of the architecture.
Each spine and its associated ribs cover a certain area of the device (the "scope" of the spine; see
Figure 3-3 on page 34). Each spine is accessed by the dedicated global network MUX tree architecture,
which defines how a particular spine is driven—either by the signal on the global network from a CCC, for
example, or by another net defined by the user. Details of the chip (main) global network spine-selection
MUX are presented in Figure 3-8 on page 44. The spine drivers for each spine are located in the middle
of the die.
Quadrant spines can be driven from user I/Os or an internal signal from the north and south sides of the
die. The ability to drive spines in the quadrant global networks can have a significant effect on system
performance for high-fanout inputs to a design. Access to the top quadrant spine regions is from the top
of the die, and access to the bottom quadrant spine regions is from the bottom of the die. The A3PE3000
device has 28 clock trees and each tree has nine spines; this flexible global network architecture enables
users to map up to 252 different internal/external clocks in an A3PE3000 device.

Table 3-4 • Globals/Spines/Rows for IGLOO and ProASIC3 Devices

Globals/ Total Rows
ProASIC3/ Quadrant Spines Spines VersaTiles in
ProASIC3L IGLOO Chip Globals Clock per per in Each Total Each
Devices Devices Globals (4×3) Trees Tree Device Tree VersaTiles Spine
A3PN010 AGLN010 4 0 1 0 0 260 260 4
A3PN015 AGLN015 4 0 1 0 0 384 384 6
A3PN020 AGLN020 4 0 1 0 0 520 520 6
A3PN060 AGLN060 6 12 4 9 36 384 1,536 12
A3PN125 AGLN125 6 12 8 9 72 384 3,072 12
A3PN250 AGLN250 6 12 8 9 72 768 6,144 24
A3P015 AGL015 6 0 1 9 9 384 384 12
A3P030 AGL030 6 0 2 9 18 384 768 12
A3P060 AGL060 6 12 4 9 36 384 1,536 12
A3P125 AGL125 6 12 8 9 72 384 3,072 12
A3P250/L AGL250 6 12 8 9 72 768 6,144 24
A3P400 AGL400 6 12 12 9 108 768 9,216 24
A3P600/L AGL600 6 12 12 9 108 1,152 13,824 36
A3P1000/L AGL1000 6 12 16 9 144 1,536 24,576 48
A3PE600/L AGLE600 6 12 12 9 108 1,120 13,440 35
A3PE1500 6 12 20 9 180 1,888 37,760 59
A3PE3000/L AGLE3000 6 12 28 9 252 2,656 74,368 83

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Global Resources in Low Power Flash Devices

Table 3-5 • Globals/Spines/Rows for IGLOO PLUS Devices

Rows
IGLOO Quadrant Globals/ Total in
PLUS Chip Globals Clock Spines Spines VersaTiles Total Each
Devices Globals (4×3) Trees per Tree per Device in Each Tree VersaTiles Spine
AGLP030 6 0 2 9 18 384* 792 12
AGLP060 6 12 4 9 36 384* 1,584 12
AGLP125 6 12 8 9 72 384* 3,120 12
Note: *Clock trees that are located at far left and far right will support more VersaTiles.

Table 3-6 • Globals/Spines/Rows for Fusion Devices

Globals/ Total VersaTiles Rows
Quadrant Spines Spines in in
Fusion Chip Globals Clock per per Each Total Each
Device Globals (4×3) Trees Tree Device Tree VersaTiles Spine
AFS090 6 12 6 9 54 384 2,304 12
AFS250 6 12 8 9 72 768 6,144 24
AFS600 6 12 12 9 108 1,152 13,824 36
AFS1500 6 12 20 9 180 1,920 38,400 60

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Spine Access
The physical location of each spine is identified by the letter T (top) or B (bottom) and an accompanying
number (Tn or Bn). The number n indicates the horizontal location of the spine; 1 refers to the first spine
on the left side of the die. Since there are six chip spines in each spine tree, there are up to six spines
available for each combination of T (or B) and n (for example, six T1 spines). Similarly, there are three
quadrant spines available for each combination of T (or B) and n (for example, four T1 spines), as shown
in Figure 3-7.

Tn Tn+1 Tn+2 Tn+3 Tn+4

Global
Network

Global
Network
C

Tn Tn+1 Tn+2 Tn+3 Tn+4

Figure 3-7 • Chip Global Aggregation

A spine is also called a local clock network, and is accessed by the dedicated global MUX architecture.
These MUXes define how a particular spine is driven. Refer to Figure 3-8 on page 44 for the global MUX
architecture. The MUXes for each chip global spine are located in the middle of the die. Access to the top
and bottom chip global spine is available from the middle of the die. There is no control dependency
between the top and bottom spines. If a top spine, T1, of a chip global network is assigned to a net, B1 is
not wasted and can be used by the global clock network. The signal assigned only to the top or bottom
spine cannot access the middle two rows of the architecture. However, if a spine is using the top and
bottom at the same time (T1 and B1, for instance), the previous restriction is lifted.
The MUXes for each quadrant global spine are located in the north and south sides of the die. Access to
the top and bottom quadrant global spines is available from the north and south sides of the die. Since
the MUXes for quadrant spines are located in the north and south sides of the die, you should not try to
drive T1 and B1 quadrant spines from the same signal.

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Global Resources in Low Power Flash Devices

Using Clock Aggregation

Clock aggregation allows for multi-spine clock domains to be assigned using hardwired connections,
without adding any extra skew. A MUX tree, shown in Figure 3-8, provides the necessary flexibility to
allow long lines, local resources, or I/Os to access domains of one, two, or four global spines. Signal
access to the clock aggregation system is achieved through long-line resources in the central rib in the
center of the die, and also through local resources in the north and south ribs, allowing I/Os to feed
directly into the clock system. As Figure 3-9 indicates, this access system is contiguous.
There is no break in the middle of the chip for the north and south I/O VersaNet access. This is different
from the quadrant clocks located in these ribs, which only reach the middle of the rib.

Internal/External Internal/External
Signals Signals

Tree Node MUX Tree Node MUX

Internal/External
Signal
Tree Node MUX
Global Rib

Internal/External
Signal
Global Driver MUX

Spine

Figure 3-8 • Spine Selection MUX of Global Tree

Global Spine I/O Access I/O Tiles

Global Rib Internal Signal Access
Global Driver and MUX Global Signal Access
Tree Node MUX

Figure 3-9 • Clock Aggregation Tree Architecture

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Clock Aggregation Architecture

This clock aggregation feature allows a balanced clock tree, which improves clock skew. The physical
regions for clock aggregation are defined from left to right and shift by one spine. For chip global
networks, there are three types of clock aggregation available, as shown in Figure 3-10:
• Long lines that can drive up to four adjacent spines (A)
• Long lines that can drive up to two adjacent spines (B)
• Long lines that can drive one spine (C)
There are three types of clock aggregation available for the quadrant spines, as shown in Figure 3-10:
• I/Os or local resources that can drive up to four adjacent spines
• I/Os or local resources that can drive up to two adjacent spines
• I/Os or local resources that can drive one spine
As an example, A3PE600 and AFS600 devices have twelve spine locations: T1, T2, T3, T4, T5, T6, B1,
B2, B3, B4, B5, and B6. Table 3-7 shows the clock aggregation you can have in A3PE600 and
AFS600.

Tn Tn + 1 Tn + 2 Tn + 3 Tn + 4

Figure 3-10 • Four Spines Aggregation

Table 3-7 • Spine Aggregation in A3PE600 or AFS600

Clock Aggregation Spine
1 spine T1, T2, T3, T4, T5, T6, B1, B2, B3, B4, B5, B6
2 spines T1:T2, T2:T3, T3:T4, T4:T5, T5:T6, B1:B2, B2:B3, B3:B4, B4:B5, B5:B6
4 spines B1:B4, B2:B5, B3:B6, T1:T4, T2:T5, T3:T6

The clock aggregation for the quadrant spines can cross over from the left to right quadrant, but not from
top to bottom. The quadrant spine assignment T1:T4 is legal, but the quadrant spine assignment T1:B1
is not legal. Note that this clock aggregation is hardwired. You can always assign signals to spine T1 and
B2 by instantiating a buffer, but this may add skew in the signal.

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Global Resources in Low Power Flash Devices

Design Recommendations
The following sections provide design flow recommendations for using a global network in a design.
• "Global Macros and I/O Standards"
• "Global Macro and Placement Selections" on page 48
• "Using Global Macros in Synplicity" on page 50
• "Global Promotion and Demotion Using PDC" on page 51
• "Spine Assignment" on page 52
• "Designer Flow for Global Assignment" on page 53
• "Simple Design Example" on page 55
• "Global Management in PLL Design" on page 57
• "Using Spines of Occupied Global Networks" on page 58

Global Macros and I/O Standards

The larger low power flash devices have six chip global networks and four quadrant global networks.
However, the same clock macros are used for assigning signals to chip globals and quadrant globals.
Depending on the clock macro placement or assignment in the Physical Design Constraint (PDC) file or
MultiView Navigator (MVN), the signal will use the chip global network or quadrant network. Table 3-8
lists the clock macros available for low power flash devices. Refer to the IGLOO, ProASIC3,
SmartFusion, and Fusion Macro Library Guide for details.

Table 3-8 • Clock Macros

Macro Name Description Symbol
CLKBUF Input macro for Clock Network CLKBUF
PAD Y

CLKBUF_x Input macro for Clock Network CLKBUF_X

with specific I/O standard PAD Y

CLKBUF_LVDS/LVPECL LVDS or LVPECL input macro PADP PADP

for Clock Network (not
supported for IGLOO nano or CLKBUF_LVDS
Y
CLKBUF_LVPECL
Y
ProASIC3 nano devices) PADN PADN

CLKINT Macro for internal clock interface

A Y

CLKINT

CLKBIBUF Bidirectional macro with input E

D PAD
dedicated to routed Clock
Y
Network CLKBIBUF

Use these available macros to assign a signal to the global network. In addition to these global macros,
PLL and CLKDLY macros can also drive the global networks. Use I/O–standard–specific clock macros
(CLKBUF_x) to instantiate a specific I/O standard for the global signals. Table 3-9 on page 47 shows the
list of these I/O–standard–specific macros. Note that if you use these I/O–standard–specific clock
macros, you cannot change the I/O standard later in the design stage. If you use the regular CLKBUF
macro, you can use MVN or the PDC file in Designer to change the I/O standard. The default I/O

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standard for CLKBUF is LVTTL in the current Microsemi Libero® System-on-Chip (SoC) and Designer
software.

Table 3-9 • I/O Standards within CLKBUF

Name Description
CLKBUF_LVCMOS5 LVCMOS clock buffer with 5.0 V CMOS voltage level
CLKBUF_LVCMOS33 LVCMOS clock buffer with 3.3 V CMOS voltage level
CLKBUF_LVCMOS25 LVCMOS clock buffer with 2.5 V CMOS voltage level1
CLKBUF_LVCMOS18 LVCMOS clock buffer with 1.8 V CMOS voltage level
CLKBUF_LVCMOS15 LVCMOS clock buffer with 1.5 V CMOS voltage level
CLKBUF_LVCMOS12 LVCMOS clock buffer with 1.2 V CMOS voltage level
CLKBUF_PCI PCI clock buffer
CLKBUF_PCIX PCIX clock buffer
CLKBUF_GTL25 GTL clock buffer with 2.5 V CMOS voltage level1
CLKBUF_GTL33 GTL clock buffer with 3.3 V CMOS voltage level1
CLKBUF_GTLP25 GTL+ clock buffer with 2.5 V CMOS voltage level1
CLKBUF_GTLP33 GTL+ clock buffer with 3.3 V CMOS voltage level1
CLKBUF_ HSTL _I HSTL Class I clock buffer1
CLKBUF_ HSTL _II HSTL Class II clock buffer1
CLKBUF_SSTL2_I SSTL2 Class I clock buffer1
CLKBUF_SSTL2_II SSTL2 Class II clock buffer1
CLKBUF_SSTL3_I SSTL3 Class I clock buffer1
CLKBUF_SSTL3_II SSTL3 Class II clock buffer1
Notes:
1. Supported in only the IGLOOe, ProASIC3E, AFS600, and AFS1500 devices
2. By default, the CLKBUF macro uses the 3.3 V LVTTL I/O technology.

The current synthesis tool libraries only infer the CLKBUF or CLKINT macros in the netlist. All other
global macros must be instantiated manually into your HDL code. The following is an example of
CLKBUF_LVCMOS25 global macro instantiations that you can copy and paste into your code:

VHDL
component clkbuf_lvcmos25
port (pad : in std_logic; y : out std_logic);
end component

begin
-- concurrent statements
u2 : clkbuf_lvcmos25 port map (pad => ext_clk, y => int_clk);
end

Verilog
module design (______);

input _____;
output ______;

clkbuf_lvcmos25 u2 (.y(int_clk), .pad(ext_clk);

endmodule

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Global Resources in Low Power Flash Devices

Global Macro and Placement Selections

Low power flash devices provide the flexibility of choosing one of the three global input pad locations
available to connect to a global / quadrant global network. For 60K gate devices and above, if the
single-ended I/O standard is chosen, there is flexibility to choose one of the global input pads (the first,
second, and fourth input). Once chosen, the other I/O locations are used as regular I/Os. If the differential
I/O standard is chosen, the first and second inputs are considered as paired, and the third input is paired
with a regular I/O. The user then has the choice of selecting one of the two sets to be used as the global
input source. There is also the option to allow an internal clock signal to feed the global network. A
multiplexer tree selects the appropriate global input for routing to the desired location. Note that the
global I/O pads do not need to feed the global network; they can also be used as regular I/O pads.

Hardwired I/O Clock Source

Hardwired I/O refers to global input pins that are hardwired to the multiplexer tree, which directly
accesses the global network. These global input pins have designated pin locations and are indicated
with the I/O naming convention Gmn (m refers to any one of the positions where the global buffers is
available, and n refers to any one of the three global input MUXes and the pin number of the associated
global location, m). Choosing this option provides the benefit of directly connecting to the global buffers,
which provides less delay. See Figure 3-11 for an example illustration of the connections, shown in red. If
a CLKBUF macro is initiated, the clock input can be placed at one of nine dedicated global input pin
locations: GmA0, GmA1, GmA2, GmB0, GmB1, GmB2, GmC0, GmC1, or GmC2. Note that the
placement of the global will determine whether you are using chip global or quadrant global. For
example, if the CLKBIF is placed in one of the GF pin locations, it will use the chip global network; if the
CLKBIF is placed in one of the GA pin locations, it will use quadrant global network. This is shown in
Figure 3-12 on page 49 and Figure 3-13 on page 49.

To Core

GFA0

GFA1 +

To global network

GFA2 +

From FPGA core

Figure 3-11 • CLKBUF Macro

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Bankx Bankx
Location B

Location A

CLKBUF placed at one of the GF pin locations

Bankx

Bankx
Location C
Chip Global Region

Location F
Bankx

Bankx
Bankx Bankx Location D
Location E

Figure 3-12 • Chip Global Region

CLKBUF placed at one of the GA pin locations

Bankx Bankx
Location B

Location A
Bankx

Bankx
Quadrant Global Region

Location F Location C
Bankx

Bankx

Location E Bankx Bankx Location D

Figure 3-13 • Quadrant Global Region

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Global Resources in Low Power Flash Devices

External I/O or Local signal as Clock Source

External I/O refers to regular I/O pins are labeled with the I/O convention IOuxwByVz. You can allow the
external I/O or internal signal to access the global. To allow the external I/O or internal signal to access
the global network, you need to instantiate the CLKINT macro. Refer to Figure 3-4 on page 35 for an
example illustration of the connections. Instead of using CLKINT, you can also use PDC to promote
signals from external I/O or internal signal to the global network. However, it may cause layout issues
because of synthesis logic replication. Refer to the "Global Promotion and Demotion Using PDC" section
on page 51 for details.

INBUF CLKINT

To Core

GFA0

GFA1 +

To global network

GFA2 +

From FPGA core

INBUF

Figure 3-14 • CLKINT Macro

Using Global Macros in Synplicity

The Synplify® synthesis tool automatically inserts global buffers for nets with high fanout during
synthesis. By default, Synplicity® puts six global macros (CLKBUF or CLKINT) in the netlist, including
any global instantiation or PLL macro. Synplify always honors your global macro instantiation. If you have
a PLL (only primary output is used) in the design, Synplify adds five more global buffers in the netlist.
Synplify uses the following global counting rule to add global macros in the netlist:
1. CLKBUF: 1 global buffer
2. CLKINT: 1 global buffer
3. CLKDLY: 1 global buffer
4. PLL: 1 to 3 global buffers
– GLA, GLB, GLC, YB, and YC are counted as 1 buffer.
– GLB or YB is used or both are counted as 1 buffer.
– GLC or YC is used or both are counted as 1 buffer.

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CLKA GLA
EXTFB LOCK
POWERDOWN
OADIVRST

GLB
YB
GLC
YC

Note: OAVDIVRST exists only in the Fusion PLL.

Figure 3-15 • PLLs in Low Power Flash Devices
You can use the syn_global_buffers attribute in Synplify to specify a maximum number of global macros
to be inserted in the netlist. This can also be used to restrict the number of global buffers inserted. In the
Synplicity 8.1 version or newer, a new attribute, syn_global_minfanout, has been added for low power
flash devices. This enables you to promote only the high-fanout signal to global. However, be aware that
you can only have six signals assigned to chip global networks, and the rest of the global signals should
be assigned to quadrant global networks. So, if the netlist has 18 global macros, the remaining 12 global
macros should have fanout that allows the instances driven by these globals to be placed inside a
quadrant.

Global Promotion and Demotion Using PDC

The HDL source file or schematic is the preferred place for defining which signals should be assigned to
a clock network using clock macro instantiation. This method is preferred because it is guaranteed to be
honored by the synthesis tools and Designer software and stop any replication on this net by the
synthesis tool. Note that a signal with fanout may have logic replication if it is not promoted to global
during synthesis. In that case, the user cannot promote that signal to global using PDC. See Synplicity
Help for details on using this attribute. To help you with global management, Designer allows you to
promote a signal to a global network or demote a global macro to a regular macro from the user netlist
using the compile options and/or PDC commands.
The following are the PDC constraints you can use to promote a signal to a global network:
1. PDC syntax to promote a regular net to a chip global clock:
assign_global_clock –net netname
The following will happen during promotion of a regular signal to a global network:
– If the net is external, the net will be driven by a CLKINT inserted automatically by Compile.
– The I/O macro will not be changed to CLKBUF macros.
– If the net is an internal net, the net will be driven by a CLKINT inserted automatically by
Compile.
2. PDC syntax to promote a net to a quadrant clock:
assign_local_clock –net netname –type quadrant UR|UL|LR|LL
This follows the same rule as the chip global clock network.
The following PDC command demotes the clock nets to regular nets.
unassign_global_clock -net netname

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Global Resources in Low Power Flash Devices

The following will happen during demotion of a global signal to regular nets:
• CLKBUF_x becomes INBUF_x; CLKINT is removed from the netlist.
• The essential global macro, such as the output of the Clock Conditioning Circuit, cannot be
demoted.
• No automatic buffering will happen.
Since no automatic buffering happens when a signal is demoted, this net may have a high delay due to
large fanout. This may have a negative effect on the quality of the results. Microsemi recommends that
the automatic global demotion only be used on small-fanout nets. Use clock networks for high-fanout
nets to improve timing and routability.

Spine Assignment
The low power flash device architecture allows the global networks to be segmented and used as clock
spines. These spines, also called local clock networks, enable the use of PDC or MVN to assign a signal
to a spine.
PDC syntax to promote a net to a spine/local clock:
assign_local_clock –net netname –type [quadrant|chip] Tn|Bn|Tn:Bm
If the net is driven by a clock macro, Designer automatically demotes the clock net to a regular net before
it is assigned to a spine. Nets driven by a PLL or CLKDLY macro cannot be assigned to a local clock.
When assigning a signal to a spine or quadrant global network using PDC (pre-compile), the Designer
software will legalize the shared instances. The number of shared instances to be legalized can be
controlled by compile options. If these networks are created in MVN (only quadrant globals can be
created), no legalization is done (as it is post-compile). Designer does not do legalization between non-
clock nets.
As an example, consider two nets, net_clk and net_reset, driving the same flip-flop. The following PDC
constraints are used:
assign_local_clock –net net_clk –type chip T3
assign_local_clock –net net_reset –type chip T1:T2
During Compile, Designer adds a buffer in the reset net and places it in the T1 or T2 region, and places
the flip-flop in the T3 spine region (Figure 3-16).

Before Compile After Compile

D D

CLK CLK
net_clk net_clk
CLR CLR
net_reset net_reset
Added
buffer

T1 T2 T3

assign_local_clock -net net_clk -type chip T3

assign_local_clock -net net_reset -type chip T1:T2

Figure 3-16 • Adding a Buffer for Shared Instances

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You can control the maximum number of shared instances allowed for the legalization to take place using
the Compile Option dialog box shown in Figure 3-17. Refer to Libero SoC / Designer online help for
details on the Compile Option dialog box. A large number of shared instances most likely indicates a
floorplanning problem that you should address.

Figure 3-17 • Shared Instances in the Compile Option Dialog Box

Designer Flow for Global Assignment

To achieve the desired result, pay special attention to global management during synthesis and place-
and-route. The current Synplify tool does not insert more than six global buffers in the netlist by default.
Thus, the default flow will not assign any signal to the quadrant global network. However, you can use
attributes in Synplify and increase the default global macro assignment in the netlist. Designer v6.2
supports automatic quadrant global assignment, which was not available in Designer v6.1. Layout will
make the choice to assign the correct signals to global. However, you can also utilize PDC and perform
manual global assignment to overwrite any automatic assignment. The following step-by-step
suggestions guide you in the layout of your design and help you improve timing in Designer:
1. Run Compile and check the Compile report. The Compile report has global information in the
"Device Utilization" section that describes the number of chip and quadrant signals in the design.
A "Net Report" section describes chip global nets, quadrant global nets, local clock nets, a list of
nets listed by fanout, and net candidates for local clock assignment. Review this information. Note
that YB or YC are counted as global only when they are used in isolation; if you use YB only and
not GLB, this net is not shown in the global/quadrant nets report. Instead, it appears in the Global
Utilization report.
2. If some signals have a very high fanout and are candidates for global promotion, promote those
signals to global using the compile options or PDC commands. Figure 3-18 on page 54 shows the
Globals Management section of the compile options. Select Promote regular nets whose
fanout is greater than and enter a reasonable value for fanouts.

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Global Resources in Low Power Flash Devices

Figure 3-18 • Globals Management GUI in Designer

3. Occasionally, the synthesis tool assigns a global macro to clock nets, even though the fanout is
significantly less than other asynchronous signals. Select Demote global nets whose fanout is
less than and enter a reasonable value for fanouts. This frees up some global networks from the
signals that have very low fanouts. This can also be done using PDC.
4. Use a local clock network for the signals that do not need to go to the whole chip but should have
low skew. This local clock network assignment can only be done using PDC.
5. Assign the I/O buffer using MVN if you have fixed I/O assignment. As shown in Figure 3-10 on
page 45, there are three sets of global pins that have a hardwired connection to each global
network. Do not try to put multiple CLKBUF macros in these three sets of global pins. For
example, do not assign two CLKBUFs to GAA0x and GAA2x pins.
6. You must click Commit at the end of MVN assignment. This runs the pre-layout checker and
checks the validity of global assignment.
7. Always run Compile with the Keep existing physical constraints option on. This uses the
quadrant clock network assignment in the MVN assignment and checks if you have the desired
signals on the global networks.
8. Run Layout and check the timing.

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Simple Design Example

Consider a design consisting of six building blocks (shift registers) and targeted for an A3PE600-PQ208
(Figure 3-16 on page 52). The example design consists of two PLLs (PLL1 has GLA only; PLL2 has both
GLA and GLB), a global reset (ACLR), an enable (EN_ALL), and three external clock domains (QCLK1,
QCLK2, and QCLK3) driving the different blocks of the design. Note that the PQ208 package only has
two PLLs (which access the chip global network). Because of fanout, the global reset and enable signals
need to be assigned to the chip global resources. There is only one free chip global for the remaining
global (QCLK1, QCLK2, QCLK3). Place two of these signals on the quadrant global resource. The
design example demonstrates manually assignment of QCLK1 and QCLK2 to the quadrant global using
the PDC command.

reg256_behave
PLL2 Shhl_In
Shhl_In Shhl_out
POWER-DOWN LOCK
REG_PLLCLK2GLA_OUT
PDOWN Adr
CLKA GLA Clock
PLLZ_CLKA
GLB REG_PLLCLK2GLA
\$116

reg256_behave
Shhl_In
DATA_QCLK1 Shhl_In Shhl_out REG_QCLK1_OUT
Adr
QCLK1 Clock
REG_QCLK1
DATA_PLLCQCLK2
EN_ALL
reg256_behave
Shhl_In
DATA_QCLK2 Shhl_In Shhl_out REG_QCLK2_OUT
ACLR Adr
QCLK2 Clock
REG_QCLK2

reg256_behave
Shhl_In
Shhl_In Shhl_out REG_PLLCLK2GLB_OUT
Adr
Clock
REG_PLLCLK2GLB

reg256_behave
Shhl_In
DATA_QCLK3 Shhl_In Shhl_out REG_QCLK3_OUT
Adr
QCLK3 Clock
REG_QCLK3

DATA_PLLCLK1
reg256_behave
Shhl_In
PLL1 Shhl_In Shhl_out
Adr REG_PLLCLK1_OUT
POWER-DOWN LOCK
PLL1_CLKA CLKA GLA Clock
\$115 REG_PLLCLK1

Figure 3-19 • Block Diagram of the Global Management Example Design

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Global Resources in Low Power Flash Devices

Step 1
Run Synthesis with default options. The Synplicity log shows the following device utilization:

Cell usage:
cell count area count*area
DFN1E1C1 1536 2.0 3072.0
BUFF 278 1.0 278.0
INBUF 10 0.0 0.0
VCC 9 0.0 0.0
GND 9 0.0 0.0
OUTBUF 6 0.0 0.0
CLKBUF 3 0.0 0.0
PLL 2 0.0 0.0
TOTAL 1853 3350.0

Step 2
Run Compile with the Promote regular nets whose fanout is greater than option selected in Designer;
you will see the following in the Compile report:
Device utilization report:
==========================
CORE Used: 1536 Total: 13824 (11.11%)
IO (W/ clocks) Used: 19 Total: 147 (12.93%)
Differential IO Used: 0 Total: 65 (0.00%)
GLOBAL Used: 8 Total: 18 (44.44%)
PLL Used: 2 Total: 2 (100.00%)
RAM/FIFO Used: 0 Total: 24 (0.00%)
FlashROM Used: 0 Total: 1 (0.00%)
……………………
The following nets have been assigned to a global resource:
Fanout Type Name
--------------------------
1536 INT_NET Net : EN_ALL_c
Driver: EN_ALL_pad_CLKINT
Source: AUTO PROMOTED
1536 SET/RESET_NET Net : ACLR_c
Driver: ACLR_pad_CLKINT
Source: AUTO PROMOTED
256 CLK_NET Net : QCLK1_c
Driver: QCLK1_pad_CLKINT
Source: AUTO PROMOTED
256 CLK_NET Net : QCLK2_c
Driver: QCLK2_pad_CLKINT
Source: AUTO PROMOTED
256 CLK_NET Net : QCLK3_c
Driver: QCLK3_pad_CLKINT
Source: AUTO PROMOTED
256 CLK_NET Net : $1N14
Driver: $1I5/Core
Source: ESSENTIAL
256 CLK_NET Net : $1N12
Driver: $1I6/Core
Source: ESSENTIAL
256 CLK_NET Net : $1N10
Driver: $1I6/Core
Source: ESSENTIAL
Designer will promote five more signals to global due to high fanout. There are eight signals assigned to
global networks.

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During Layout, Designer will assign two of the signals to quadrant global locations.

Step 3 (optional)
You can also assign the QCLK1_c and QCLK2_c nets to quadrant regions using the following PDC
commands:
assign_local_clock –net QCLK1_c –type quadrant UL
assign_local_clock –net QCLK2_c –type quadrant LL

Step 4
Import this PDC with the netlist and run Compile again. You will see the following in the Compile report:
The following nets have been assigned to a global resource:
Fanout Type Name
--------------------------
1536 INT_NET Net : EN_ALL_c
Driver: EN_ALL_pad_CLKINT
Source: AUTO PROMOTED
1536 SET/RESET_NET Net : ACLR_c
Driver: ACLR_pad_CLKINT
Source: AUTO PROMOTED
256 CLK_NET Net : QCLK3_c
Driver: QCLK3_pad_CLKINT
Source: AUTO PROMOTED
256 CLK_NET Net : $1N14
Driver: $1I5/Core
Source: ESSENTIAL
256 CLK_NET Net : $1N12
Driver: $1I6/Core
Source: ESSENTIAL
256 CLK_NET Net : $1N10
Driver: $1I6/Core
Source: ESSENTIAL
The following nets have been assigned to a quadrant clock resource using PDC:
Fanout Type Name
--------------------------
256 CLK_NET Net : QCLK1_c
Driver: QCLK1_pad_CLKINT
Region: quadrant_UL
256 CLK_NET Net : QCLK2_c
Driver: QCLK2_pad_CLKINT
Region: quadrant_LL

Step 5
Run Layout.

Global Management in PLL Design

This section describes the legal global network connections to PLLs in the low power flash devices. For
detailed information on using PLLs, refer to "Clock Conditioning Circuits in Low Power Flash Devices and
Mixed Signal FPGAs" section on page 61. Microsemi recommends that you use the dedicated global
pins to directly drive the reference clock input of the associated PLL for reduced propagation delays and
clock distortion. However, low power flash devices offer the flexibility to connect other signals to
reference clock inputs. Each PLL is associated with three global networks (Figure 3-5 on page 36). There
are some limitations, such as when trying to use the global and PLL at the same time:
• If you use a PLL with only primary output, you can still use the remaining two free global
networks.
• If you use three globals associated with a PLL location, you cannot use the PLL on that location.
• If the YB or YC output is used standalone, it will occupy one global, even though this signal does
not go to the global network.

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Global Resources in Low Power Flash Devices

Using Spines of Occupied Global Networks

When a signal is assigned to a global network, the flash switches are programmed to set the MUX select
lines (explained in the "Clock Aggregation Architecture" section on page 45) to drive the spines of that
network with the global net. However, if the global net is restricted from reaching into the scope of a
spine, the MUX drivers of that spine are available for other high-fanout or critical signals (Figure 3-20).
For example, if you want to limit the CLK1_c signal to the left half of the chip and want to use the right
side of the same global network for CLK2_c, you can add the following PDC commands:
define_region -name region1 -type inclusive 0 0 34 29
assign_net_macros region1 CLK1_c
assign_local_clock –net CLK2_c –type chip B2

Figure 3-20 • Design Example Using Spines of Occupied Global Networks

Conclusion
IGLOO, Fusion, and ProASIC3 devices contain 18 global networks: 6 chip global networks and 12
quadrant global networks. These global networks can be segmented into local low-skew networks called
spines. The spines provide low-skew networks for the high-fanout signals of a design. These allow you
up to 252 different internal/external clocks in an A3PE3000 device. This document describes the
architecture for the global network, plus guidelines and methodologies in assigning signals to globals and
spines.

Related Documents

User’s Guides
IGLOO, ProASIC3, SmartFusion, and Fusion Macro Library Guide
http://www.microsemi.com/soc/documents/pa3_libguide_ug.pdf

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List of Changes
The following table lists critical changes that were made in each revision of the chapter.

Date Changes Page

July 2010 This chapter is no longer published separately with its own part number and N/A
version but is now part of several FPGA fabric user’s guides.
Notes were added where appropriate to point out that IGLOO nano and N/A
ProASIC3 nano devices do not support differential inputs (SAR 21449).
The "Global Architecture" section and "VersaNet Global Network Distribution" 31, 33
section were revised for clarity (SARs 20646, 24779).
The "I/O Banks and Global I/Os" section was moved earlier in the document, 35
renamed to "Chip and Quadrant Global I/Os", and revised for clarity. Figure 3-4 •
Global Connections Details, Figure 3-6 • Global Inputs, Table 3-2 • Chip Global
Pin Name, and Table 3-3 • Quadrant Global Pin Name are new (SARs 20646,
24779).
The "Clock Aggregation Architecture" section was revised (SARs 20646, 24779). 41
Figure 3-7 • Chip Global Aggregation was revised (SARs 20646, 24779). 43
The "Global Macro and Placement Selections" section is new (SARs 20646, 48
24779).
v1.4 The "Global Architecture" section was updated to include 10 k devices, and to 31
(December 2008) include information about VersaNet global support for IGLOO nano devices.
The Table 3-1 • Flash-Based FPGAs was updated to include IGLOO nano and 32
ProASIC3 nano devices.
The "VersaNet Global Network Distribution" section was updated to include 10 k 33
devices and to note an exception in global lines for nano devices.
Figure 3-2 • Simplified VersaNet Global Network (30 k gates and below) is new. 34
The "Spine Architecture" section was updated to clarify support for 10 k and nano 41
devices.
Table 3-4 • Globals/Spines/Rows for IGLOO and ProASIC3 Devices was updated 41
to include IGLOO nano and ProASIC3 nano devices.
The figure in the CLKBUF_LVDS/LVPECL row of Table 3-8 • Clock Macros was 46
updated to change CLKBIBUF to CLKBUF.
v1.3 A third bullet was added to the beginning of the "Global Architecture" section: In 31
(October 2008) Fusion devices, the west CCC also contains a PLL core. In the two larger devices
(AFS600 and AFS1500), the west and east CCCs each contain a PLL.
The "Global Resource Support in Flash-Based Devices" section was revised to 32
include new families and make the information more concise.
Table 3-4 • Globals/Spines/Rows for IGLOO and ProASIC3 Devices was updated 41
to include A3PE600/L in the device column.
Table note 1 was revised in Table 3-9 • I/O Standards within CLKBUF to include 47
AFS600 and AFS1500.
v1.2 The following changes were made to the family descriptions in Table 3-1 • Flash- 32
(June 2008) Based FPGAs:
• ProASIC3L was updated to include 1.5 V.
• The number of PLLs for ProASIC3E was changed from five to six.

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Global Resources in Low Power Flash Devices

Date Changes Page

v1.1 The "Global Architecture" section was updated to include the IGLOO PLUS 31
(March 2008) family. The bullet was revised to include that the west CCC does not contain a
PLL core in 15 k and 30 k devices. Instances of "A3P030 and AGL030 devices"
were replaced with "15 k and 30 k gate devices."
v1.1 Table 3-1 • Flash-Based FPGAs and the accompanying text was updated to 32
(continued) include the IGLOO PLUS family. The "IGLOO Terminology" section and
"ProASIC3 Terminology" section are new.
The "VersaNet Global Network Distribution" section, "Spine Architecture" section, 33, 34
the note in Figure 3-1 • Overview of VersaNet Global Network and Device
Architecture, and the note in Figure 3-3 • Simplified VersaNet Global Network
(60 k gates and above) were updated to include mention of 15 k gate devices.
Table 3-4 • Globals/Spines/Rows for IGLOO and ProASIC3 Devices was updated 41
to add the A3P015 device, and to revise the values for clock trees, globals/spines
per tree, and globals/spines per device for the A3P030 and AGL030 devices.
Table 3-5 • Globals/Spines/Rows for IGLOO PLUS Devices is new. 42
CLKBUF_LVCMOS12 was added to Table 3-9 • I/O Standards within CLKBUF. 47
The "User’s Guides" section was updated to include the three different I/O 58
Structures chapters for ProASIC3 and IGLOO device families.
v1.0 Figure 3-3 • Simplified VersaNet Global Network (60 k gates and above) was 34
(January 2008) updated.
The "Naming of Global I/Os" section was updated. 35
The "Using Global Macros in Synplicity" section was updated. 50
The "Global Promotion and Demotion Using PDC" section was updated. 51
The "Designer Flow for Global Assignment" section was updated. 53
The "Simple Design Example" section was updated. 55
51900087-0/1.05 Table 3-4 • Globals/Spines/Rows for IGLOO and ProASIC3 Devices was 41
(January 2005) updated.

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4 – Clock Conditioning Circuits in Low Power
Flash Devices and Mixed Signal FPGAs

Introduction
This document outlines the following device information: Clock Conditioning Circuit (CCC) features, PLL
core specifications, functional descriptions, software configuration information, detailed usage
information, recommended board-level considerations, and other considerations concerning clock
conditioning circuits and global networks in low power flash devices or mixed signal FPGAs.

Overview of Clock Conditioning Circuitry

In Fusion, IGLOO, and ProASIC3 devices, the CCCs are used to implement frequency division,
frequency multiplication, phase shifting, and delay operations. The CCCs are available in six chip
locations—each of the four chip corners and the middle of the east and west chip sides. For device-
specific variations, refer to the "Device-Specific Layout" section on page 78.
The CCC is composed of the following:
• PLL core
• 3 phase selectors
• 6 programmable delays and 1 fixed delay that advances/delays phase
• 5 programmable frequency dividers that provide frequency multiplication/division (not shown in
Figure 4-6 on page 71 because they are automatically configured based on the user's required
frequencies)
• 1 dynamic shift register that provides CCC dynamic reconfiguration capability
Figure 4-1 provides a simplified block diagram of the physical implementation of the building blocks in
each of the CCCs.

Multiplexer
Tree
To
Core CLKA To Global Network A
3 Global I/Os
From
Core

To
Core CLKB CCC
3 Global I/Os To Global Network B
Function Block
From (with or without PLL)
Core

To
Core CLKC To Global Network C
3 Global I/Os
From
Core
Multiple Signals
Single Signals

Figure 4-1 • Overview of the CCCs Offered in Fusion, IGLOO, and ProASIC3

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Clock Conditioning Circuits in Low Power Flash Devices and Mixed Signal FPGAs

Each CCC can implement up to three independent global buffers (with or without programmable delay)
or a PLL function (programmable frequency division/multiplication, phase shift, and delays) with up to
three global outputs. Unused global outputs of a PLL can be used to implement independent global
buffers, up to a maximum of three global outputs for a given CCC.

CCC Programming
The CCC block is fully configurable, either via flash configuration bits set in the programming bitstream or
through an asynchronous interface. This asynchronous dedicated shift register interface is dynamically
accessible from inside the low power flash devices to permit parameter changes, such as PLL divide
ratios and delays, during device operation.
To increase the versatility and flexibility of the clock conditioning system, the CCC configuration is
determined either by the user during the design process, with configuration data being stored in flash
memory as part of the device programming procedure, or by writing data into a dedicated shift register
during normal device operation.
This latter mode allows the user to dynamically reconfigure the CCC without the need for core
programming. The shift register is accessed through a simple serial interface. Refer to the "UJTAG
Applications in Microsemi’s Low Power Flash Devices" section on page 297 or the application note Using
Global Resources in Actel Fusion Devices.

Global Resources
Low power flash and mixed signal devices provide three global routing networks (GLA, GLB, and GLC)
for each of the CCC locations. There are potentially many I/O locations; each global I/O location can be
chosen from only one of three possibilities. This is controlled by the multiplexer tree circuitry in each
global network. Once the I/O location is selected, the user has the option to utilize the CCCs before the
signals are connected to the global networks. The CCC in each location (up to six) has the same
structure, so generating the CCC macros is always done with an identical software GUI. The CCCs in the
corner locations drive the quadrant global networks, and the CCCs in the middle of the east and west
chip sides drive the chip global networks. The quadrant global networks span only a quarter of the
device, while the chip global networks span the entire device. For more details on global resources
offered in low power flash devices, refer to the "Global Resources in Low Power Flash Devices" section
on page 31.
A global buffer can be placed in any of the three global locations (CLKA-GLA, CLKB-GLB, or
CLKC-GLC) of a given CCC. A PLL macro uses the CLKA CCC input to drive its reference clock. It uses
the GLA and, optionally, the GLB and GLC global outputs to drive the global networks. A PLL macro can
also drive the YB and YC regular core outputs. The GLB (or GLC) global output cannot be reused if the
YB (or YC) output is used. Refer to the "PLL Macro Signal Descriptions" section on page 68 for more
information.
Each global buffer, as well as the PLL reference clock, can be driven from one of the following:
• 3 dedicated single-ended I/Os using a hardwired connection
• 2 dedicated differential I/Os using a hardwired connection (not supported for IGLOO nano or
ProASIC3 nano devices)
• The FPGA core

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CCC Support in Microsemi’s Flash Devices

The flash FPGAs listed in Table 4-1 support the CCC feature and the functions described in this
document.

Table 4-1 • Flash-Based FPGAs

Series Family* Description
IGLOO IGLOO Ultra-low power 1.2 V to 1.5 V FPGAs with Flash*Freeze technology
IGLOOe Higher density IGLOO FPGAs with six PLLs and additional I/O standards
IGLOO PLUS IGLOO FPGAs with enhanced I/O capabilities
IGLOO nano The industry’s lowest-power, smallest-size solution
ProASIC3 ProASIC3 Low power, high-performance 1.5 V FPGAs
ProASIC3E Higher density ProASIC3 FPGAs with six PLLs and additional I/O standards
ProASIC3 nano Lowest-cost solution with enhanced I/O capabilities
ProASIC3L ProASIC3 FPGAs supporting 1.2 V to 1.5 V with Flash*Freeze technology
RT ProASIC3 Radiation-tolerant RT3PE600L and RT3PE3000L
Military ProASIC3/EL Military temperature A3PE600L, A3P1000, and A3PE3000L
Automotive ProASIC3 ProASIC3 FPGAs qualified for automotive applications
Fusion Fusion Mixed signal FPGA integrating ProASIC3 FPGA fabric, programmable
analog block, support for ARM® Cortex™-M1 soft processors, and flash
memory into a monolithic device
Note: *The device names link to the appropriate datasheet, including product brief, DC and switching characteristics,
and packaging information.

IGLOO Terminology
In documentation, the terms IGLOO series and IGLOO devices refer to all of the IGLOO devices as listed
in Table 4-1. Where the information applies to only one product line or limited devices, these exclusions
will be explicitly stated.

ProASIC3 Terminology
In documentation, the terms ProASIC3 series and ProASIC3 devices refer to all of the ProASIC3 devices
as listed in Table 4-1. Where the information applies to only one product line or limited devices, these
exclusions will be explicitly stated.
To further understand the differences between the IGLOO and ProASIC3 devices, refer to the Industry’s
Lowest Power FPGAs Portfolio.

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Clock Conditioning Circuits in Low Power Flash Devices and Mixed Signal FPGAs

Global Buffers with No Programmable Delays

Access to the global / quadrant global networks can be configured directly from the global I/O buffer,
bypassing the CCC functional block (as indicated by the dotted lines in Figure 4-1 on page 61). Internal
signals driven by the FPGA core can use the global / quadrant global networks by connecting via the
routed clock input of the multiplexer tree.
There are many specific CLKBUF macros supporting the wide variety of single-ended I/O inputs
(CLKBUF) and differential I/O standards (CLKBUF_LVDS/LVPECL) in the low power flash families. They
are used when connecting global I/Os directly to the global/quadrant networks.
Note: IGLOO nano and ProASIC nano devices do not support differential inputs.
When an internal signal needs to be connected to the global/quadrant network, the CLKINT macro is
used to connect the signal to the routed clock input of the network's MUX tree.
To utilize direct connection from global I/Os or from internal signals to the global/quadrant networks,
CLKBUF, CLKBUF_LVPECL/LVDS, and CLKINT macros are used (Figure 4-2).
• The CLKBUF and CLKBUF_LVPECL/LVDS1 macros are composite macros that include an I/O
macro driving a global buffer, which uses a hardwired connection.
• The CLKBUF, CLKBUF_LVPECL/LVDS1 and CLKINT macros are pass-through clock sources
and do not use the PLL or provide any programmable delay functionality.
• The CLKINT macro provides a global buffer function driven internally by the FPGA core.
The available CLKBUF macros are described in the IGLOO, ProASIC3, SmartFusion, and Fusion
Macro Library Guide.

Clock Source Clock Conditioning Output

CLKBUF_LVDS/LVPECL Macro CLKBIBUF Macro None GLA, GLB,

or GLC
PADN E
Y D PAD
PADP
Y CLKBIBUF

CLKINT Macro CLKBUF Macro

A Y PAD Y

Note: IGLOO nano and ProASIC nano devices do not support differential inputs.
Figure 4-2 • CCC Options: Global Buffers with No Programmable Delay

Global Buffer with Programmable Delay

Clocks requiring clock adjustments can utilize the programmable delay cores before connecting to the
global / quadrant global networks. A maximum of 18 CCC global buffers can be instantiated in a device—
three per CCC and up to six CCCs per device.
Each CCC functional block contains a programmable delay element for each of the global networks (up
to three), and users can utilize these features by using the corresponding macro (Figure 4-3 on page 65).

1. B-LVDS and M-LVDS are supported with the LVDS macro.

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Clock Source
Clock Conditioning Output
Input LVDS/LVPECL Macro
GLA
PADN Y CLK GL or
PADP GLB
or
INBUF* Macro DLYGL[4:0] GLC
PAD Y

Notes:
1. For INBUF* driving a PLL macro or CLKDLY macro, the I/O will be hard-routed to the CCC; i.e., will be placed by
software to a dedicated Global I/O.
2. IGLOO nano and ProASIC3 nano devices do not support differential inputs.
Figure 4-3 • CCC Options: Global Buffers with Programmable Delay

The CLKDLY macro is a pass-through clock source that does not use the PLL, but provides the ability to
delay the clock input using a programmable delay. The CLKDLY macro takes the selected clock input
and adds a user-defined delay element. This macro generates an output clock phase shift from the input
clock.
The CLKDLY macro can be driven by an INBUF* macro to create a composite macro, where the I/O
macro drives the global buffer (with programmable delay) using a hardwired connection. In this case, the
software will automatically place the dedicated global I/O in the appropriate locations. Many specific
INBUF macros support the wide variety of single-ended and differential I/O standards supported by the
low power flash family. The available INBUF macros are described in the IGLOO, ProASIC3,
SmartFusion, and Fusion Macro Library Guide.
The CLKDLY macro can be driven directly from the FPGA core. The CLKDLY macro can also be driven
from an I/O that is routed through the FPGA regular routing fabric. In this case, users must instantiate a
special macro, PLLINT, to differentiate the clock input driven by the hardwired I/O connection.
The visual CLKDLY configuration in the SmartGen area of the Microsemi Libero System-on-Chip (SoC)
and Designer tools allows the user to select the desired amount of delay and configures the delay
elements appropriately. SmartGen also allows the user to select the input clock source. SmartGen will
automatically instantiate the special macro, PLLINT, when needed.

CLKDLY Macro Signal Descriptions

The CLKDLY macro supports one input and one output. Each signal is described in Table 4-2.

Table 4-2 • Input and Output Description of the CLKDLY Macro

Signal Name I/O Description
CLK Reference Clock Input Reference clock input
GL Global Output Output Primary output clock to respective global/quadrant clock networks

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Clock Conditioning Circuits in Low Power Flash Devices and Mixed Signal FPGAs

CLKDLY Macro Usage

When a CLKDLY macro is used in a CCC location, the programmable delay element is used to allow the
clock delays to go to the global network. In addition, the user can bypass the PLL in a CCC location
integrated with a PLL, but use the programmable delay that is associated with the global network by
instantiating the CLKDLY macro. The same is true when using programmable delay elements in a CCC
location with no PLLs (the user needs to instantiate the CLKDLY macro). There is no difference between
the programmable delay elements used for the PLL and the CLKDLY macro. The CCC will be configured
to use the programmable delay elements in accordance with the macro instantiated by the user.
As an example, if the PLL is not used in a particular CCC location, the designer is free to specify up to
three CLKDLY macros in the CCC, each of which can have its own input frequency and delay adjustment
options. If the PLL core is used, assuming output to only one global clock network, the other two global
clock networks are free to be used by either connecting directly from the global inputs or connecting from
one or two CLKDLY macros for programmable delay.
The programmable delay elements are shown in the block diagram of the PLL block shown in Figure 4-6
on page 71. Note that any CCC locations with no PLL present contain only the programmable delay
blocks going to the global networks (labeled "Programmable Delay Type 2"). Refer to the "Clock Delay
Adjustment" section on page 86 for a description of the programmable delay types used for the PLL. Also
refer to Table 4-14 on page 94 for Programmable Delay Type 1 step delay values, and Table 4-15 on
page 94 for Programmable Delay Type 2 step delay values. CCC locations with a PLL present can be
configured to utilize only the programmable delay blocks (Programmable Delay Type 2) going to the
global networks A, B, and C.
Global network A can be configured to use only the programmable delay element (bypassing the PLL) if the
PLL is not used in the design. Figure 4-6 on page 71 shows a block diagram of the PLL, where the
programmable delay elements are used for the global networks (Programmable Delay Type 2).

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Global Buffers with PLL Function

Clocks requiring frequency synthesis or clock adjustments can utilize the PLL core before connecting to
the global / quadrant global networks. A maximum of 18 CCC global buffers can be instantiated in a
device—three per CCC and up to six CCCs per device. Each PLL core can generate up to three
global/quadrant clocks, while a clock delay element provides one.
The PLL functionality of the clock conditioning block is supported by the PLL macro.

Clock Source Clock Conditioning Output

Input LVDS/LVPECL Macro PLL Macro

GLA
CLKA GLA
PADN Y EXTFB LOCK or
POWERDOWN GLB
PADP OADIVRST1 YB GLA and (GLB or YB)
GLC
YC
or
INBUF* Macro OADIVHALF1
PAD Y 2 GLA and (GLC or YC)
OADIV[4:0]
OAMUX[2:0] 2 or
DLYGLA[4:0] 2
OBDIV[4:0] 2
OBMUX[2:0] 2
GLA and (GLB or YB) and
2
DLYYB[4:0]
DLYGLB[4:0]
2 (GLC or YC)
OCDIV[4:0] 2
2
OCMUX[2:0]
2
DLYYC[4:0]
DLYGLC[4:0]2
2
FINDIV[6:0]
FBDIV[6:0] 2
FBDLY[4:0]2
FBSEL[1:0]2
XDLYSEL2
VCOSEL[2:0]2

Notes:
1. For Fusion only.
2. Refer to the IGLOO, ProASIC3, SmartFusion, and Fusion Macro Library Guide for more information.
3. For INBUF* driving a PLL macro or CLKDLY macro, the I/O will be hard-routed to the CCC; i.e., will be placed by
software to a dedicated Global I/O.
4. IGLOO nano and ProASIC3 nano devices do not support differential inputs.
Figure 4-4 • CCC Options: Global Buffers with PLL

The PLL macro provides five derived clocks (three independent) from a single reference clock. The PLL
macro also provides power-down input and lock output signals. The additional inputs shown on the
macro are configuration settings, which are configured through the use of SmartGen. For manual setting
of these bits refer to the IGLOO, ProASIC3, SmartFusion, and Fusion Macro Library Guide for details.
Figure 4-6 on page 71 illustrates the various clock output options and delay elements.

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Clock Conditioning Circuits in Low Power Flash Devices and Mixed Signal FPGAs

PLL Macro Signal Descriptions

The PLL macro supports two inputs and up to six outputs. Table 4-3 gives a description of each signal.
Table 4-3 • Input and Output Signals of the PLL Block
Signal Name I/O Description
CLKA Reference Clock Input Reference clock input for PLL core; input clock for primary output
clock, GLA
OADIVRST Reset Signal for the Input For Fusion only. OADIVRST can be used when you bypass the PLL
Output Divider A core (i.e., OAMUX = 001). The purpose of the OADIVRST signals is
to reset the output of the final clock divider to synchronize it with the
input to that divider when the PLL is bypassed. The signal is active
on a low to high transition. The signal must be low for at least one
divider input. If PLL core is used, this signal is "don't care" and the
internal circuitry will generate the reset signal for the
synchronization purpose.
OADIVHALF Output A Division by Input For Fusion only. Active high. Division by half feature. This feature
Half can only be used when users bypass the PLL core (i.e., OAMUX =
001) and the RC Oscillator (RCOSC) drives the CLKA input. This
can be used to divide the 100 MHz RC oscillator by a factor of 1.5,
2.5, 3.5, 4.5 ... 14.5). Refer to Table 4-18 on page 95 for more
information.
EXTFB External Feedback Input Allows an external signal to be compared to a reference clock in the
PLL core's phase detector.
POWERDOWN Power Down Input Active low input that selects power-down mode and disables the
PLL. With the POWERDOWN signal asserted, the PLL core sends
0 V signals on all of the outputs.
GLA Primary Output Output Primary output clock to respective global/quadrant clock networks
GLB Secondary 1 Output Output Secondary 1 output clock to respective global/quadrant clock
networks
YB Core 1 Output Output Core 1 output clock to local routing network
GLC Secondary 2 Output Output Secondary 2 output clock to respective global/quadrant clock
networks
YC Core 2 Output Output Core 2 output clock to local routing network
LOCK PLL Lock Indicator Output Active high signal indicating that steady-state lock has been
achieved between CLKA and the PLL feedback signal

Input Clock
The inputs to the input reference clock (CLKA) of the PLL can come from global input pins, regular I/O
pins, or internally from the core. For Fusion families, the input reference clock can also be from the
embedded RC oscillator or crystal oscillator.

Global Output Clocks

GLA (Primary), GLB (Secondary 1), and GLC (Secondary 2) are the outputs of Global Multiplexer 1,
Global Multiplexer 2, and Global Multiplexer 3, respectively. These signals (GLx) can be used to drive the
high-speed global and quadrant networks of the low power flash devices.
A global multiplexer block consists of the input routing for selecting the input signal for the GLx clock and
the output multiplexer, as well as delay elements associated with that clock.

Core Output Clocks

YB and YC are known as Core Outputs and can be used to drive internal logic without using global
network resources. This is especially helpful when global network resources must be conserved and
utilized for other timing-critical paths.

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YB and YC are identical to GLB and GLC, respectively, with the exception of a higher selectable final
output delay. The SmartGen PLL Wizard will configure these outputs according to user specifications and
can enable these signals with or without the enabling of Global Output Clocks.
The above signals can be enabled in the following output groupings in both internal and external
feedback configurations of the static PLL:
• One output – GLA only
• Two outputs – GLA + (GLB and/or YB)
• Three outputs – GLA + (GLB and/or YB) + (GLC and/or YC)

PLL Macro Block Diagram

As illustrated, the PLL supports three distinct output frequencies from a given input clock. Two of these
(GLB and GLC) can be routed to the B and C global network access, respectively, and/or routed to the
device core (YB and YC).
There are five delay elements to support phase control on all five outputs (GLA, GLB, GLC, YB, and YC).
There are delay elements in the feedback loop that can be used to advance the clock relative to the
reference clock.
The PLL macro reference clock can be driven in the following ways:
1. By an INBUF* macro to create a composite macro, where the I/O macro drives the global buffer
(with programmable delay) using a hardwired connection. In this case, the I/O must be placed in
one of the dedicated global I/O locations.
2. Directly from the FPGA core.
3. From an I/O that is routed through the FPGA regular routing fabric. In this case, users must
instantiate a special macro, PLLINT, to differentiate from the hardwired I/O connection described
earlier.
During power-up, the PLL outputs will toggle around the maximum frequency of the voltage-controlled
oscillator (VCO) gear selected. Toggle frequencies can range from 40 MHz to 250 MHz. This will
continue as long as the clock input (CLKA) is constant (HIGH or LOW). This can be prevented by LOW
assertion of the POWERDOWN signal.
The visual PLL configuration in SmartGen, a component of the Libero SoC and Designer tools, will derive
the necessary internal divider ratios based on the input frequency and desired output frequencies
selected by the user.

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Implementing EXTFB in ProASIC3/E Devices

When the external feedback (EXTFB) signal of the PLL in the ProASIC3/E devices is implemented, the
phase detector of the PLL core receives the reference clock (CLKA) and EXTFB as inputs. EXTFB must
be sourced as an INBUF macro and located at the global/chip clock location associated with the target
PLL by Designer software. EXTFB cannot be sourced from the FPGA fabric.
The following example shows CLKA and EXTFB signals assigned to two global I/Os in the same global
area of ProASIC3E device.

To Core

GxA0
The reference clock,
CLKA, can be assigned
on GxA0 or GxA1.
–
GxA1 +

Source for CCC

(CLKA or CLKB or CLKC)

–
Routed Clok
GxA2 + (from FPGA core)

To Core

GxB0

External Feedback
–
(EXTFB) signal is GxB1 +
assigned on GxB1
Source for CCC
by Designer automatically.
(CLKA or CLKB or CLKC)

–
Routed Clok
GxB2 + (from FPGA core)

x represents global location; can be A, B, C, D, E, or F

Figure 4-5 • CLKA and EXTFB Assigned to Global I/Os

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SmartGen also allows the user to select the various delays and phase shift values necessary to adjust
the phases between the reference clock (CLKA) and the derived clocks (GLA, GLB, GLC, YB, and YC).
SmartGen allows the user to select the input clock source. SmartGen automatically instantiates the
special macro, PLLINT, when needed.

CLKA

Four-Phase Output Phase Programmable GLA

PLL Core Delay Type 2
Select

Programmable
Programmable Delay Delay Type 1

Programmable GLB
EXTFB Delay Type 2
Phase
Select
Programmable YB
Delay Type 1

Programmable GLC
Delay Type 2
Phase
Select

Programmable YC
Delay Type 1

Note: Clock divider and clock multiplier blocks are not shown in this figure or in SmartGen. They are automatically
configured based on the user's required frequencies.
Figure 4-6 • CCC with PLL Block

Global Input Selections

Low power flash devices provide the flexibility of choosing one of the three global input pad locations
available to connect to a CCC functional block or to a global / quadrant global network. Figure 4-7 on
page 72 and Figure 4-8 on page 72 show the detailed architecture of each global input structure for 30 k
gate devices and below, as well as 60 k gate devices and above, respectively. For 60 k gate devices and
above (Figure 4-7 on page 72), if the single-ended I/O standard is chosen, there is flexibility to choose
one of the global input pads (the first, second, and fourth input). Once chosen, the other I/O locations are
used as regular I/Os. If the differential I/O standard is chosen (not applicable for IGLOO nano and
ProASIC3 nano devices), the first and second inputs are considered as paired, and the third input is
paired with a regular I/O.
The user then has the choice of selecting one of the two sets to be used as the clock input source to the
CCC functional block. There is also the option to allow an internal clock signal to feed the global network
or the CCC functional block. A multiplexer tree selects the appropriate global input for routing to the
desired location. Note that the global I/O pads do not need to feed the global network; they can also be
used as regular I/O pads.

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Dedicated I/O Pad To Core

Sample Pin Names

Drives the global
GEC0/IO37RSB1 network directly
(GLA or GLC)

Routed Clock
(from FPGA core)

Figure 4-7 • Clock Input Sources (30 k gates devices and below)

Each shaded box represents an

INBUF or INBUF_LVDS/LVPECL
To Core
macro, as appropriate.

Sample Pin Names

1
GAA0/IO0NDB0V0

1
GAA1/IO00PDB0V0 +

Source for CCC

(CLKA or CLKB or CLKC)

Routed Clock
1 2
GAA2/IO13PDB7V1 + (from FPGA core)

GAA[0:2]: GA represents global in the northwest corner

of the device. A[0:2]: designates specific A clock source.

Notes:
1. Represents the global input pins. Globals have direct access to the clock conditioning block and are
not routed via the FPGA fabric. Refer to the "User I/O Naming Conventions in I/O Structures" chapter
of the appropriate device user’s guide.
2. Instantiate the routed clock source input as follows:
a) Connect the output of a logic element to the clock input of a PLL, CLKDLY, or CLKINT macro.
b) Do not place a clock source I/O (INBUF or INBUF_LVPECL/LVDS/B-LVDS/M-LVDS/DDR) in
a relevant global pin location.
3. IGLOO nano and ProASIC3 nano devices do not support differential inputs.
Figure 4-8 • Clock Input Sources Including CLKBUF, CLKBUF_LVDS/LVPECL, and CLKINT (60 k
gates devices and above)

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Each global buffer, as well as the PLL reference clock, can be driven from one of the following:
• 3 dedicated single-ended I/Os using a hardwired connection
• 2 dedicated differential I/Os using a hardwired connection (not applicable for IGLOO nano and
ProASIC3 nano devices)
• The FPGA core
Since the architecture of the devices varies as size increases, the following list details I/O types
supported for globals:

IGLOO and ProASIC3

• LVDS-based clock sources are available only on 250 k gate devices and above (IGLOO nano and
ProASIC3 nano devices do not support differential inputs).
• 60 k and 125 k gate devices support single-ended clock sources only.
• 15 k and 30 k gate devices support these inputs for CCC only and do not contain a PLL.
• nano devices:
– 10 k, 15 k, and 20 k devices do not contain PLLs in the CCCs, and support only CLKBUF and
CLKINT.
– 60 k, 125 k, and 250 k devices support one PLL in the middle left CCC position. In the
absence of the PLL, this CCC can be used by CLKBUF, CLKINT, and CLKDLY macros. The
corner CCCs support CLKBUF, CLKINT, and CLKDLY.

Fusion
• AFS600 and AFS1500: All single-ended, differential, and voltage-referenced I/O standards (Pro
I/O).
• AFS090 and AFS250: All single-ended and differential I/O standards.

Clock Sources for PLL and CLKDLY Macros

The input reference clock (CLKA for a PLL macro, CLK for a CLKDLY macro) can be accessed from
different sources via the associated clock multiplexer tree. Each CCC has the option of choosing the
source of the input clock from one of the following:
• Hardwired I/O
• External I/O
• Core Logic
• RC Oscillator (Fusion only)
• Crystal Oscillator (Fusion only)
The SmartGen macro builder tool allows users to easily create the PLL and CLKDLY macros with the
desired settings. Microsemi strongly recommends using SmartGen to generate the CCC macros.

Hardwired I/O Clock Source

Hardwired I/O refers to global input pins that are hardwired to the multiplexer tree, which directly
accesses the CCC global buffers. These global input pins have designated pin locations and are
indicated with the I/O naming convention Gmn (m refers to any one of the positions where the PLL core
is available, and n refers to any one of the three global input MUXes and the pin number of the
associated global location, m). Choosing this option provides the benefit of directly connecting to the
CCC reference clock input, which provides less delay. See Figure 4-9 on page 74 for an example
illustration of the connections, shown in red. If a CLKDLY macro is initiated to utilize the programmable
delay element of the CCC, the clock input can be placed at one of nine dedicated global input pin
locations. In other words, if Hardwired I/O is chosen as the input source, the user can decide to place the
input pin in one of the GmA0, GmA1, GmA2, GmB0, GmB1, GmB2, GmC0, GmC1, or GmC2 locations of
the low power flash devices. When a PLL macro is used to utilize the PLL core in a CCC location, the
clock input of the PLL can only be connected to one of three GmA* global pin locations: GmA0, GmA1, or
GmA2.

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To Core

Gmn0
Multiplexer PLL or CLKDLY
_ Tree Macro
Gmn1 +
To Global (or local)
CLKA Routing Network

IOuxwByVz
Gmn* = Global Input Pin
_
IOuxwByVz = Regular I/O Pin
Routed Clock
Gmn2 +
(from FPGA core)
PLLINT
Note: Fusion CCCs have additional source selections (RCOSC, XTAL).
Figure 4-9 • Illustration of Hardwired I/O (global input pins) Usage for IGLOO and ProASIC3 devices 60 k Gates
and Larger

To Core
Dedicated I/O Pad

Sample Pin Names

GEC0/IO37RSB1
Directly Drives Global Network
(GLA or GLC)

Routed Clock
(from the FPGA core)

Figure 4-10 • Illustration of Hardwired I/O (global input pins) Usage for IGLOO and ProASIC3 devices 30 k
Gates and Smaller

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External I/O Clock Source

External I/O refers to regular I/O pins. The clock source is instantiated with one of the various INBUF
options and accesses the CCCs via internal routing. The user has the option of assigning this input to
any of the I/Os labeled with the I/O convention IOuxwByVz. Refer to the "User I/O Naming Conventions
in I/O Structures" chapter of the appropriate device user’s guide, and for Fusion, refer to the Fusion
Family of Mixed Signal FPGAs datasheet for more information. Figure 4-11 gives a brief explanation of
external I/O usage. Choosing this option provides the freedom of selecting any user I/O location but
introduces additional delay because the signal connects to the routed clock input through internal routing
before connecting to the CCC reference clock input.
For the External I/O option, the routed signal would be instantiated with a PLLINT macro before
connecting to the CCC reference clock input. This instantiation is conveniently done automatically by
SmartGen when this option is selected. Microsemi recommends using the SmartGen tool to generate the
CCC macro. The instantiation of the PLLINT macro results in the use of the routed clock input of the I/O
to connect to the PLL clock input. If not using SmartGen, manually instantiate a PLLINT macro before the
PLL reference clock to indicate that the regular I/O driving the PLL reference clock should be used (see
Figure 4-11 for an example illustration of the connections, shown in red).
In the above two options, the clock source must be instantiated with one of the various INBUF macros.
The reference clock pins of the CCC functional block core macros must be driven by regular input
macros (INBUFs), not clock input macros.

To Core

Gmn*
Multiplexer PLL or CLKDLY
Tree Macro
_
Gmn* +
To Global (or Local)
CLKA
Routing Network

IOuxwByVz*

_
Routed Clock
Gmn* +
(from FPGA Core) Gmn* = Global Input Pin
PLLINT IOuxwByVz = Regular I/O Pin

IOuxwByVz*

Figure 4-11 • Illustration of External I/O Usage

For Fusion devices, the input reference clock can also be from the embedded RC oscillator and crystal
oscillator. In this case, the CCC configuration is the same as the hardwired I/O clock source, and users
are required to instantiate the RC oscillator or crystal oscillator macro and connect its output to the input
reference clock of the CCC block.

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Core Logic Clock Source

Core logic refers to internal routed nets. Internal routed signals access the CCC via the FPGA Core
Fabric. Similar to the External I/O option, whenever the clock source comes internally from the core itself,
the routed signal is instantiated with a PLLINT macro before connecting to the CCC clock input (see
Figure 4-12 for an example illustration of the connections, shown in red).

To Core

Gmn*
Multiplexer
PLL or CLKDLY
Tree
_ Macro
Gmn* +
To Global (or Local)
CLKA
Routing Network

IOuxwByVz*
Gmn* = Global Input Pin
Routed Clock IOuxwByVz = Regular I/O Pin
_ (from FPGA Core)
Gmn* +
PLLINT From Internal
Signals

Figure 4-12 • Illustration of Core Logic Usage

For Fusion devices, the input reference clock can also be from the embedded RC oscillator and crystal
oscillator. In this case, the CCC configuration is the same as the hardwired I/O clock source, and users
are required to instantiate the RC oscillator or crystal oscillator macro and connect its output to the input
reference clock of the CCC block.

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Available I/O Standards

Table 4-4 • Available I/O Standards within CLKBUF and CLKBUF_LVDS/LVPECL Macros
CLKBUF_LVCMOS5
CLKBUF_LVCMOS33 1
CLKBUF_LVCMOS25 2
CLKBUF_LVCMOS18
CLKBUF_LVCMOS15
CLKBUF_PCI
CLKBUF_PCIX 3
CLKBUF_GTL25 2,3
CLKBUF_GTL33 2,3
CLKBUF_GTLP25 2,3
CLKBUF_GTLP33 2,3
CLKBUF_HSTL_I 2,3
CLKBUF_HSTL_II 2,3
CLKBUF_SSTL3_I 2,3
CLKBUF_SSTL3_II 2,3
CLKBUF_SSTL2_I 2,3
CLKBUF_SSTL2_II 2,3
CLKBUF_LVDS 4,5
CLKBUF_LVPECL5
Notes:
1. By default, the CLKBUF macro uses 3.3 V LVTTL I/O technology. For more details, refer to the
IGLOO, ProASIC3, SmartFusion, and Fusion Macro Library Guide.
2. I/O standards only supported in ProASIC3E and IGLOOe families.
3. I/O standards only supported in the following Fusion devices: AFS600 and AFS1500.
4. B-LVDS and M-LVDS standards are supported by CLKBUF_LVDS.
5. Not supported for IGLOO nano and ProASIC3 nano devices.

Global Synthesis Constraints

The Synplify® synthesis tool, by default, allows six clocks in a design for Fusion, IGLOO, and ProASIC3.
When more than six clocks are needed in the design, a user synthesis constraint attribute,
syn_global_buffers, can be used to control the maximum number of clocks (up to 18) that can be inferred
by the synthesis engine.
High-fanout nets will be inferred with clock buffers and/or internal clock buffers. If the design consists of
CCC global buffers, they are included in the count of clocks in the design.
The subsections below discuss the clock input source (global buffers with no programmable delays) and
the clock conditioning functional block (global buffers with programmable delays and/or PLL function) in
detail.

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Device-Specific Layout
Two kinds of CCCs are offered in low power flash devices: CCCs with integrated PLLs, and CCCs
without integrated PLLs (simplified CCCs). Table 4-5 lists the number of CCCs in various devices.
Table 4-5 • Number of CCCs by Device Size and Package
Device CCCs with CCCs without
Integrated Integrated PLLs
ProASIC3 IGLOO Package PLLs (simplified CCC)
A3PN010 AGLN010 All 0 2
A3PN015 AGLN015 All 0 2
A3PN020 AGLN020 All 0 2
AGLN060 CS81 0 6
A3PN060 AGLN060 All other 1 5
packages
AGLN125 CS81 0 6
A3PN125 AGLN125 All other 1 5
packages
AGLN250 CS81 0 6
A3PN250 AGLN250 All other 1 5
packages
A3P015 AGL015 All 0 2
A3P030 AGL030/AGLP030 All 0 2
AGL060/AGLP060 CS121/CS201 0 6
A3P060 AGL060/AGLP060 All other 1 5
packages
A3P125 AGL125/AGLP125 All 1 5
A3P250/L AGL250 All 1 5
A3P400 AGL400 All 1 5
A3P600/L AGL600 All 1 5
A3P1000/L AGL1000 All 1 5
A3PE600 AGLE600 PQ208 2 4
A3PE600/L All other 6 0
packages
A3PE1500 PQ208 2 4
A3PE1500 All other 6 0
packages
A3PE3000/L PQ208 2 4
A3PE3000/L AGLE3000 All other 6 0
packages
Fusion Devices
AFS090 All 1 5
AFS250, M1AFS250 All 1 5
AFS600, M7AFS600, M1AFS600 All 2 4
AFS1500, M1AFS1500 All 2 4

Note: nano 10 k, 15 k, and 20 k offer 6 global MUXes instead of CCCs.

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This section outlines the following device information: CCC features, PLL core specifications, functional
descriptions, software configuration information, detailed usage information, recommended board-level
considerations, and other considerations concerning global networks in low power flash devices.

Clock Conditioning Circuits with Integrated PLLs

Each of the CCCs with integrated PLLs includes the following:
• 1 PLL core, which consists of a phase detector, a low-pass filter, and a four-phase voltage-
controlled oscillator
• 3 global multiplexer blocks that steer signals from the global pads and the PLL core onto the
global networks
• 6 programmable delays and 1 fixed delay for time advance/delay adjustments
• 5 programmable frequency divider blocks to provide frequency synthesis (automatically
configured by the SmartGen macro builder tool)

Clock Conditioning Circuits without Integrated PLLs

There are two types of simplified CCCs without integrated PLLs in low power flash devices.
1. The simplified CCC with programmable delays, which is composed of the following:
– 3 global multiplexer blocks that steer signals from the global pads and the programmable
delay elements onto the global networks
– 3 programmable delay elements to provide time delay adjustments
2. The simplified CCC (referred to as CCC-GL) without programmable delay elements, which is
composed of the following:
– A global multiplexer block that steer signals from the global pads onto the global networks

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CCC Locations
CCCs located in the middle of the east and west sides of the device access the three VersaNet global
networks on each side (six total networks), while the four CCCs located in the four corners access three
quadrant global networks (twelve total networks). See Figure 4-13.

Northwest Quadrant Global Networks

CCC Location A CCC Location B

3 3 3 3
Quadrant Global Spine

Chip-Wide (main)
Global
Networks
6 6 6 6
3 CCC Location C

CCC Location F 3
6 6 6 6
Global Spine

3 3 3 3

CCC Location E CCC Location D

Southeast Quadrant Global Networks

Figure 4-13 • Global Network Architecture for 60 k Gate Devices and Above

The following explains the locations of the CCCs in IGLOO and ProASIC3 devices:
In Figure 4-15 on page 82 through Figure 4-16 on page 82, CCCs with integrated PLLs are indicated in
red, and simplified CCCs are indicated in yellow. There is a letter associated with each location of the
CCC, in clockwise order. The upper left corner CCC is named "A," the upper right is named "B," and so
on. These names finish up at the middle left with letter "F."

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IGLOO and ProASIC3 CCC Locations

In all IGLOO and ProASIC3 devices (except 10 k through 30 k gate devices, which do not contain PLLs),
six CCCs are located in the same positions as the IGLOOe and ProASIC3E CCCs. Only one of the
CCCs has an integrated PLL and is located in the middle of the west (middle left) side of the device. The
other five CCCs are simplified CCCs and are located in the four corners and the middle of the east side
of the device (Figure 4-14).

A Bank 0 B
CCC

RAM Block
4,608-Bit Dual-Port
SRAM or FIFO Block
Bank 3

Bank 1
I/Os
F C

VersaTile
Bank 3

Bank 1
RAM Block
4,608-Bit Dual-Port
ISP AES User Nonvolatile
Decryption FlashROM (FROM)
Charge Pumps SRAM or FIFO Block
E D
Bank 2

= CCC with integrated PLL

= Simplified CCC with programmable delay elements (no PLL)

Figure 4-14 • CCC Locations in IGLOO and ProASIC3 Family Devices

(except 10 k through 30 k gate devices)

Note: The number and architecture of the banks are different for some devices.
10 k through 30 k gate devices do not support PLL features. In these devices, there are two CCC-GLs at
the lower corners (one at the lower right, and one at the lower left). These CCC-GLs do not have
programmable delays.

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IGLOOe and ProASIC3E CCC Locations

IGLOOe and ProASIC3E devices have six CCCs—one in each of the four corners and one each in the
middle of the east and west sides of the device (Figure 4-15).
All six CCCs are integrated with PLLs, except in PQFP-208 package devices. PQFP-208 package
devices also have six CCCs, of which two include PLLs and four are simplified CCCs. The CCCs with
PLLs are implemented in the middle of the east and west sides of the device (middle right and middle
left). The simplified CCCs without PLLs are located in the four corners of the device (Figure 4-16).

A B
CCC
RAM Block
4,608-Bit Dual-Port SRAM
or FIFO Block

Pro I/Os
F C

VersaTile

RAM Block
4,608-Bit Dual-Port SRAM
ISP AES User Nonvolatile Flash*Freeze Charge or FIFO Block
Decryption FlashRom Technology Pumps

E D

= CCC with integrated PLL

Figure 4-15 • CCC Locations in IGLOOe and ProASIC3E Family Devices (except PQFP-208
package)

A Bank 0
CCC B

RAM Block
4,608-Bit Dual-Port
SRAM or FIFO Block
Bank 3

Bank 1

I/Os
F C

VersaTile
Bank 3

Bank 1

RAM Block
4,608-Bit Dual-Port
ISP AES User Nonvolatile Flash*Freeze Charge
Decryption* FlashRom Technology Pumps
SRAM or FIFO Block
E D
Bank 2

= CCC with integrated PLL

= Simplified CCC with programmable delay elements (no PLL)

Figure 4-16 • CCC Locations in ProASIC3E Family Devices (PQFP-208 package)

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Fusion CCC Locations

Fusion devices have six CCCs: one in each of the four corners and one each in the middle of the east
and west sides of the device (Figure 4-17 and Figure 4-18). The device can have one integrated PLL in
the middle of the west side of the device or two integrated PLLs in the middle of the east and west sides
of the device (middle right and middle left).

A Bank 0 B
CCC

RAM Block
4,608-Bit Dual-Port
SRAM or FIFO Block
Bank 3

Bank 1
I/Os
F C

VersaTile
Bank 3

Bank 1
RAM Block
4,608-Bit Dual-Port
ISP AES User Nonvolatile
Decryption FlashROM (FROM)
Charge Pumps SRAM or FIFO Block
E D
Bank 2

= CCC with integrated PLL

= Simplified CCC with programmable delay elements (no PLL)

Figure 4-17 • CCC Locations in Fusion Family Devices (AFS090, AFS250, M1AFS250)

A Bank 0
CCC B

RAM Block
4,608-Bit Dual-Port
SRAM or FIFO Block
Bank 3

Bank 1

I/Os
F C

VersaTile
Bank 3

Bank 1

RAM Block
4,608-Bit Dual-Port
ISP AES User Nonvolatile Flash*Freeze Charge
Decryption* FlashRom Technology Pumps
SRAM or FIFO Block
E D
Bank 2

= CCC with integrated PLL

= Simplified CCC with programmable delay elements (no PLL)

Figure 4-18 • CCC Locations in Fusion Family Devices (except AFS090, AFS250, M1AFS250)

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PLL Core Specifications

PLL core specifications can be found in the DC and Switching Characteristics chapter of the appropriate
family datasheet.

Loop Bandwidth
Common design practice for systems with a low-noise input clock is to have PLLs with small loop
bandwidths to reduce the effects of noise sources at the output. Table 4-6 shows the PLL loop
bandwidth, providing a measure of the PLL's ability to track the input clock and jitter.

Table 4-6 • –3 dB Frequency of the PLL

Minimum Typical Maximum
(Ta = +125°C, VCCA = 1.4 V) (Ta = +25°C, VCCA = 1.5 V) (Ta = –55°C, VCCA = 1.6 V)
–3 dB 15 kHz 25 kHz 45 kHz
Frequency

PLL Core Operating Principles

This section briefly describes the basic principles of PLL operation. The PLL core is composed of a
phase detector (PD), a low-pass filter (LPF), and a four-phase voltage-controlled oscillator (VCO).
Figure 4-19 illustrates a basic single-phase PLL core with a divider and delay in the feedback path.

Frequency
Frequency
Reference
Output
Input FIN Voltage
Phase Low-Pass M × FIN
Controlled
Detector Filter
Oscillator

Divide by M
Delay
Counter

Figure 4-19 • Simplified PLL Core with Feedback Divider and Delay

The PLL is an electronic servo loop that phase-aligns the PD feedback signal with the reference input. To
achieve this, the PLL dynamically adjusts the VCO output signal according to the average phase
difference between the input and feedback signals.
The first element is the PD, which produces a voltage proportional to the phase difference between its
inputs. A simple example of a digital phase detector is an Exclusive-OR gate. The second element, the
LPF, extracts the average voltage from the phase detector and applies it to the VCO. This applied voltage
alters the resonant frequency of the VCO, thus adjusting its output frequency.
Consider Figure 4-19 with the feedback path bypassing the divider and delay elements. If the LPF
steadily applies a voltage to the VCO such that the output frequency is identical to the input frequency,
this steady-state condition is known as lock. Note that the input and output phases are also identical. The
PLL core sets a LOCK output signal HIGH to indicate this condition.
Should the input frequency increase slightly, the PD detects the frequency/phase difference between its
reference and feedback input signals. Since the PD output is proportional to the phase difference, the
change causes the output from the LPF to increase. This voltage change increases the resonant
frequency of the VCO and increases the feedback frequency as a result. The PLL dynamically adjusts in
this manner until the PD senses two phase-identical signals and steady-state lock is achieved. The
opposite (decreasing PD output signal) occurs when the input frequency decreases.
Now suppose the feedback divider is inserted in the feedback path. As the division factor M (shown in
Figure 4-20 on page 85) is increased, the average phase difference increases. The average phase

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difference will cause the VCO to increase its frequency until the output signal is phase-identical to the
input after undergoing division. In other words, lock in both frequency and phase is achieved when the
output frequency is M times the input. Thus, clock division in the feedback path results in multiplication at
the output.
A similar argument can be made when the delay element is inserted into the feedback path. To achieve
steady-state lock, the VCO output signal will be delayed by the input period less the feedback delay. For
periodic signals, this is equivalent to time-advancing the output clock by the feedback delay.
Another key parameter of a PLL system is the acquisition time. Acquisition time is the amount of time it
takes for the PLL to achieve lock (i.e., phase-align the feedback signal with the input reference clock).
For example, suppose there is no voltage applied to the VCO, allowing it to operate at its free-running
frequency. Should an input reference clock suddenly appear, a lock would be established within the
maximum acquisition time.

Functional Description
This section provides detailed descriptions of PLL block functionality: clock dividers and multipliers, clock
delay adjustment, phase adjustment, and dynamic PLL configuration.

Clock Dividers and Multipliers

The PLL block contains five programmable dividers. Figure 4-20 shows a simplified PLL block.

90°
180° Output
CLKA n Delay
PLL Core 270° GLA
u D2
m 0° Primary

Fixed D1
Delay
Feedback
System Delay Output
Delay Delay
D2 GLB
v Secondary 1
D1 YB
Output
Delay
Output
Delay
D1 = Programmable Delay Type 1
D2 = Programmable Delay Type 2 D2 GLC
w Secondary 2
D1 YC
Output
Delay

Figure 4-20 • PLL Block Diagram

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Dividers n and m (the input divider and feedback divider, respectively) provide integer frequency division
factors from 1 to 128. The output dividers u, v, and w provide integer division factors from 1 to 32.
Frequency scaling of the reference clock CLKA is performed according to the following formulas:
fGLA = fCLKA × m / (n × u) – GLA Primary PLL Output Clock
EQ 4-1
fGLB = fYB = fCLKA × m / (n × v) – GLB Secondary 1 PLL Output Clock(s)
EQ 4-2
fGLC = fYC = fCLKA × m / (n × w) – GLC Secondary 2 PLL Output Clock(s)
EQ 4-3
SmartGen provides a user-friendly method of generating the configured PLL netlist, which includes
automatically setting the division factors to achieve the closest possible match to the requested
frequencies. Since the five output clocks share the n and m dividers, the achievable output frequencies
are interdependent and related according to the following formula:
fGLA = fGLB × (v / u) = fGLC × (w / u)
EQ 4-4

Clock Delay Adjustment

There are a total of seven configurable delay elements implemented in the PLL architecture.
Two of the delays are located in the feedback path, entitled System Delay and Feedback Delay. System
Delay provides a fixed delay of 2 ns (typical), and Feedback Delay provides selectable delay values from
0.6 ns to 5.56 ns in 160 ps increments (typical). For PLLs, delays in the feedback path will effectively
advance the output signal from the PLL core with respect to the reference clock. Thus, the System and
Feedback delays generate negative delay on the output clock. Additionally, each of these delays can be
independently bypassed if necessary.
The remaining five delays perform traditional time delay and are located at each of the outputs of the
PLL. Besides the fixed global driver delay of 0.755 ns for each of the global networks, the global
multiplexer outputs (GLA, GLB, and GLC) each feature an additional selectable delay value, as given in
Table 4-7.
Table 4-7 • Delay Values in Libero SoC Software per Device Family
Device Typical Starting Values Increments Ending Value
ProASIC3 200 ps 0 to 735 ps 200 ps 6.735 ns
IGLOO/ProASIC3L 1.5 V 360 ps 0 to 1.610 ns 360 ps 12.410 ns
IGLOO/ProASIC3L 1.2 V 580 ps 0 to 2.880 ns 580 ps 20.280 ns

The additional YB and YC signals have access to a selectable delay from 0.6 ns to 5.56 ns in 160 ps
increments (typical). This is the same delay value as the CLKDLY macro. It is similar to CLKDLY, which
bypasses the PLL core just to take advantage of the phase adjustment option with the delay value.
The following parameters must be taken into consideration to achieve minimum delay at the outputs
(GLA, GLB, GLC, YB, and YC) relative to the reference clock: routing delays from the PLL core to CCC
outputs, core outputs and global network output delays, and the feedback path delay. The feedback path
delay acts as a time advance of the input clock and will offset any delays introduced beyond the PLL core
output. The routing delays are determined from back-annotated simulation and are configuration-
dependent.

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Phase Adjustment
The four phases available (0, 90, 180, 270) are phases with respect to VCO (PLL output). The
VCO is divided to achieve the user's CCC required output frequency (GLA, YB/GLB, YC/GLC). The
division happens after the selection of the VCO phase. The effective phase shift is actually the VCO
phase shift divided by the output divider. This is why the visual CCC shows both the actual achievable
phase and more importantly the actual delay that is equivalent to the phase shift that can be
achieved.

Dynamic PLL Configuration

The CCCs can be configured both statically and dynamically.
In addition to the ports available in the Static CCC, the Dynamic CCC has the dynamic shift register
signals that enable dynamic reconfiguration of the CCC. With the Dynamic CCC, the ports CLKB and
CLKC are also exposed. All three clocks (CLKA, CLKB, and CLKC) can be configured independently.
The CCC block is fully configurable. The following two sources can act as the CCC configuration bits.

Flash Configuration Bits

The flash configuration bits are the configuration bits associated with programmed flash switches. These
bits are used when the CCC is in static configuration mode. Once the device is programmed, these bits
cannot be modified. They provide the default operating state of the CCC.

Dynamic Shift Register Outputs

This source does not require core reprogramming and allows core-driven dynamic CCC reconfiguration.
When the dynamic register drives the configuration bits, the user-defined core circuit takes full control
over SDIN, SDOUT, SCLK, SSHIFT, and SUPDATE. The configuration bits can consequently be
dynamically changed through shift and update operations in the serial register interface. Access to the
logic core is accomplished via the dynamic bits in the specific tiles assigned to the PLLs.
Figure 4-21 illustrates a simplified block diagram of the MUX architecture in the CCCs.

SDIN
<80:0>* Flash
SDOUT
Dynamic Shift Programming
SCLK
Register Configuration
SSHIFT
SUPDATE Bits
<80>
RESET_ENABLE
<79:0> <79:0>*

MODE

Configuration Bits
Note: *For Fusion, bit <88:81> is also needed.
Figure 4-21 • The CCC Configuration MUX Architecture

The selection between the flash configuration bits and the bits from the configuration register is made
using the MODE signal shown in Figure 4-21. If the MODE signal is logic HIGH, the dynamic shift
register configuration bits are selected. There are 81 control bits to configure the different functions of the
CCC.

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Each group of control bits is assigned a specific location in the configuration shift register. For a list of the
81 configuration bits (C[80:0]) in the CCC and a description of each, refer to "PLL Configuration Bits
Description" on page 90. The configuration register can be serially loaded with the new configuration
data and programmed into the CCC using the following ports:
• SDIN: The configuration bits are serially loaded into a shift register through this port. The LSB of
the configuration data bits should be loaded first.
• SDOUT: The shift register contents can be shifted out (LSB first) through this port using the shift
operation.
• SCLK: This port should be driven by the shift clock.
• SSHIFT: The active-high shift enable signal should drive this port. The configuration data will be
shifted into the shift register if this signal is HIGH. Once SSHIFT goes LOW, the data shifting will
be halted.
• SUPDATE: The SUPDATE signal is used to configure the CCC with the new configuration bits
when shifting is complete.
To access the configuration ports of the shift register (SDIN, SDOUT, SSHIFT, etc.), the user should
instantiate the CCC macro in his design with appropriate ports. Microsemi recommends that users
choose SmartGen to generate the CCC macros with the required ports for dynamic reconfiguration.
Users must familiarize themselves with the architecture of the CCC core and its input, output, and
configuration ports to implement the desired delay and output frequency in the CCC structure.
Figure 4-22 shows a model of the CCC with configurable blocks and switches.

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CLKA
/n
90° (7)
C<6:0>
PLL 180° (6) GLA
M D
Core 270° (5)
U
0° (4) X /u
A C<50:46>
/m
(2) Internal
C<13:7> C<18:14>
(1) C<31:29>
(0)
(2)
D
(1)
D M
U
C<44:40> X /v D YB
C<45> B
C<39:38>

C<23:19>
C<34:32>
D GLB
CLKB

C<55:51>
Internal
M
U D YC
/w
X
C
C<70:66>

C<28:24>

C<37:35> D GLC
CLKC

C<60:56>
Internal

Figure 4-22 • CCC Block Control Bits – Graphical Representation of Assignments

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Loading the Configuration Register

The most important part of CCC dynamic configuration is to load the shift register properly with the
configuration bits. There are different ways to access and load the configuration shift register:
• JTAG interface
• Logic core
• Specific I/O tiles
JTAG Interface
The JTAG interface requires no additional I/O pins. The JTAG TAP controller is used to control the
loading of the CCC configuration shift register.
Low power flash devices provide a user interface macro between the JTAG pins and the device core
logic. This macro is called UJTAG. A user should instantiate the UJTAG macro in his design to access the
configuration register ports via the JTAG pins.
For more information on CCC dynamic reconfiguration using UJTAG, refer to the "UJTAG Applications in
Microsemi’s Low Power Flash Devices" section on page 297.
Logic Core
If the logic core is employed, the user must design a module to provide the configuration data and control
the shifting and updating of the CCC configuration shift register. In effect, this is a user-designed TAP
controller, which requires additional chip resources.
Specific I/O Tiles
If specific I/O tiles are used for configuration, the user must provide the external equivalent of a TAP
controller. This does not require additional core resources but does use pins.

Shifting the Configuration Data

To enter a new configuration, all 81 bits must shift in via SDIN. After all bits are shifted, SSHIFT must go
LOW and SUPDATE HIGH to enable the new configuration. For simulation purposes, bits <71:73> and
<77:80> are "don't care."
The SUPDATE signal must be LOW during any clock cycle where SSHIFT is active. After SUPDATE is
asserted, it must go back to the LOW state until a new update is required.

PLL Configuration Bits Description

Table 4-8 • Configuration Bit Descriptions for the CCC Blocks
Config.
Bits Signal Name Description
1
<88:87> GLMUXCFG [1:0] NGMUX configuration The configuration bits specify the input clocks
to the NGMUX (refer to Table 4-17 on
page 94).2
86 OCDIVHALF1 Division by half When the PLL is bypassed, the 100 MHz RC
oscillator can be divided by the divider factor
in Table 4-18 on page 95.
85 OBDIVHALF1 Division by half When the PLL is bypassed, the 100 MHz RC
oscillator can be divided by a 0.5 factor (refer
to Table 4-18 on page 95).
84 OADIVHALF1 Division by half When the PLL is bypassed, the 100 MHz RC
oscillator can be divided by certain 0.5 factor
(refer to Table 4-16 on page 94).
Notes:
1. The <88:81> configuration bits are only for the Fusion dynamic CCC.
2. This value depends on the input clock source, so Layout must complete before these bits can be set.
After completing Layout in Designer, generate the "CCC_Configuration" report by choosing Tools >
Report > CCC_Configuration. The report contains the appropriate settings for these bits.

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Table 4-8 • Configuration Bit Descriptions for the CCC Blocks (continued)
Config.
Bits Signal Name Description
83 RXCSEL1 CLKC input selection Select the CLKC input clock source between
RC oscillator and crystal oscillator (refer to
Table 4-16 on page 94).2
82 RXBSEL1 CLKB input selection Select the CLKB input clock source between
RC oscillator and crystal oscillator (refer to
Table 4-16 on page 94).2
81 RXASEL1 CLKA input selection Select the CLKA input clock source between
RC oscillator and crystal oscillator (refer to
Table 4-16 on page 94).2
80 RESETEN Reset Enable Enables (active high) the synchronization of
PLL output dividers after dynamic
reconfiguration (SUPDATE). The Reset
Enable signal is READ-ONLY.
79 DYNCSEL Clock Input C Dynamic Configures clock input C to be sent to GLC for
Select dynamic control.2
78 DYNBSEL Clock Input B Dynamic Configures clock input B to be sent to GLB for
Select dynamic control.2
77 DYNASEL Clock Input A Dynamic Configures clock input A for dynamic PLL
Select configuration.2
<76:74> VCOSEL[2:0] VCO Gear Control Three-bit VCO Gear Control for four frequency
ranges (refer to Table 4-19 on page 95 and
Table 4-20 on page 95).
73 STATCSEL MUX Select on Input C MUX selection for clock input C2
72 STATBSEL MUX Select on Input B MUX selection for clock input B2
71 STATASEL MUX Select on Input A MUX selection for clock input A2
<70:66> DLYC[4:0] YC Output Delay Sets the output delay value for YC.
<65:61> DLYB[4:0] YB Output Delay Sets the output delay value for YB.
<60:56> DLYGLC[4:0] GLC Output Delay Sets the output delay value for GLC.
<55:51> DLYGLB[4:0] GLB Output Delay Sets the output delay value for GLB.
<50:46> DLYGLA[4:0] Primary Output Delay Primary GLA output delay
45 XDLYSEL System Delay Select When selected, inserts System Delay in the
feedback path in Figure 4-20 on page 85.
<44:40> FBDLY[4:0] Feedback Delay Sets the feedback delay value for the
feedback element in Figure 4-20 on page 85.
<39:38> FBSEL[1:0] Primary Feedback Delay Controls the feedback MUX: no delay, include
Select programmable delay element, or use external
feedback.
<37:35> OCMUX[2:0] Secondary 2 Output Selects from the VCO’s four phase outputs for
Select GLC/YC.
<34:32> OBMUX[2:0] Secondary 1 Output Selects from the VCO’s four phase outputs for
Select GLB/YB.
Notes:
1. The <88:81> configuration bits are only for the Fusion dynamic CCC.
2. This value depends on the input clock source, so Layout must complete before these bits can be set.
After completing Layout in Designer, generate the "CCC_Configuration" report by choosing Tools >
Report > CCC_Configuration. The report contains the appropriate settings for these bits.

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Table 4-8 • Configuration Bit Descriptions for the CCC Blocks (continued)
Config.
Bits Signal Name Description
<31:29> OAMUX[2:0] GLA Output Select Selects from the VCO’s four phase outputs for
GLA.
<28:24> OCDIV[4:0] Secondary 2 Output Sets the divider value for the GLC/YC outputs.
Divider Also known as divider w in Figure 4-20 on
page 85. The divider value will be OCDIV[4:0]
+ 1.
<23:19> OBDIV[4:0] Secondary 1 Output Sets the divider value for the GLB/YB outputs.
Divider Also known as divider v in Figure 4-20 on
page 85. The divider value will be OBDIV[4:0]
+ 1.
<18:14> OADIV[4:0] Primary Output Divider Sets the divider value for the GLA output. Also
known as divider u in Figure 4-20 on page 85.
The divider value will be OADIV[4:0] + 1.
<13:7> FBDIV[6:0] Feedback Divider Sets the divider value for the PLL core
feedback. Also known as divider m in
Figure 4-20 on page 85. The divider value will
be FBDIV[6:0] + 1.
<6:0> FINDIV[6:0] Input Divider Input Clock Divider (/n). Sets the divider value
for the input delay on CLKA. The divider value
will be FINDIV[6:0] + 1.
Notes:
1. The <88:81> configuration bits are only for the Fusion dynamic CCC.
2. This value depends on the input clock source, so Layout must complete before these bits can be set.
After completing Layout in Designer, generate the "CCC_Configuration" report by choosing Tools >
Report > CCC_Configuration. The report contains the appropriate settings for these bits.

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Table 4-9 to Table 4-15 on page 94 provide descriptions of the configuration data for the configuration
bits.

Table 4-9 • Input Clock Divider, FINDIV[6:0] (/n)

FINDIV<6:0> State Divisor New Frequency Factor
0 1 1.00000
1 2 0.50000
…

…
127 128 0.0078125

Table 4-10 • Feedback Clock Divider, FBDIV[6:0] (/m)

FBDIV<6:0> State Divisor New Frequency Factor
0 1 1
1 2 2
…

…
127 128 128

Table 4-11 • Output Frequency Dividers

A Output Divider, OADIV <4:0> (/u);
B Output Divider, OBDIV <4:0> (/v);
C Output Divider, OCDIV <4:0> (/w)
OADIV<4:0>; OBDIV<4:0>;
CDIV<4:0> State Divisor New Frequency Factor
0 1 1.00000
1 2 0.50000
…

…
31 32 0.03125

Table 4-12 • MUXA, MUXB, MUXC

OAMUX<2:0>; OBMUX<2:0>; OCMUX<2:0> State MUX Input Selected
0 None. Six-input MUX and PLL are bypassed.
Clock passes only through global MUX and goes directly
into HC ribs.
1 Not available
2 PLL feedback delay line output
3 Not used
4 PLL VCO 0° phase shift
5 PLL VCO 270° phase shift
6 PLL VCO 180° phase shift
7 PLL VCO 90° phase shift

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Table 4-13 • 2-Bit Feedback MUX

FBSEL<1:0> State MUX Input Selected
0 Ground. Used for power-down mode in power-down logic
block.
1 PLL VCO 0° phase shift
2 PLL delayed VCO 0° phase shift
3 N/A

Table 4-14 • Programmable Delay Selection for Feedback Delay and Secondary Core Output Delays
FBDLY<4:0>; DLYYB<4:0>; DLYYC<4:0> State Delay Value
0 Typical delay = 600 ps
1 Typical delay = 760 ps
2 Typical delay = 920 ps
…

…
31 Typical delay = 5.56 ns

Table 4-15 • Programmable Delay Selection for Global Clock Output Delays
DLYGLA<4:0>; DLYGLB<4:0>; DLYGLC<4:0> State Delay Value
0 Typical delay = 225 ps
1 Typical delay = 760 ps
2 Typical delay = 920 ps
…

31 Typical delay = 5.56 ns

Table 4-16 • Fusion Dynamic CCC Clock Source Selection

RXASEL DYNASEL Source of CLKA
1 0 RC Oscillator
1 1 Crystal Oscillator
RXBSEL DYNBSEL Source of CLKB
1 0 RC Oscillator
1 1 Crystal Oscillator
RXBSEL DYNCSEL Source of CLKC
1 0 RC Oscillator
1 1 Crystal Oscillator

Table 4-17 • Fusion Dynamic CCC NGMUX Configuration

GLMUXCFG<1:0> NGMUX Select Signal Supported Input Clocks to NGMUX
00 0 GLA
1 GLC
01 0 GLA
1 GLINT
10 0 GLC
1 GLINT

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Table 4-18 • Fusion Dynamic CCC Division by Half Configuration

OADIV<4:0> /
OADIVHALF / OBDIV<4:0> /
OBDIVHALF / OCDIV<4:0> Input Clock Output Clock
OCDIVHALF (in decimal) Divider Factor Frequency Frequency (MHz)
1 2 1.5 100 MHz RC 66.7
Oscillator
4 2.5 40.0
6 3.5 28.6
8 4.5 22.2
10 5.5 18.2
12 6.5 15.4
14 7.5 13.3
16 8.5 11.8
18 9.5 10.5
20 10.5 9.5
22 11.5 8.7
24 12.5 8.0
26 13.5 7.4
28 14.5 6.9
0 0–31 1–32 Other Clock Sources Depends on other
divider settings

Table 4-19 • Configuration Bit <76:75> / VCOSEL<2:1> Selection for All Families
VCOSEL[2:1]
00 01 10 11
Min. Max. Min. Max. Min. Max. Min. Max.
Voltage (MHz) (MHz) (MHz) (MHz) (MHz) (MHz) (MHz) (MHz)
IGLOO and IGLOO PLUS
1.2 V ± 5% 24 35 30 70 60 140 135 160
1.5 V ± 5% 24 43.75 30 87.5 60 175 135 250
ProASIC3L, RT ProASIC3, and Military ProASIC3/L
1.2 V ± 5% 24 35 30 70 60 140 135 250
1.5 V ± 5% 24 43.75 30 70 60 175 135 350
ProASIC3 and Fusion
1.5 V ± 5% 24 43.75 33.75 87.5 67.5 175 135 350

Table 4-20 • Configuration Bit <74> / VCOSEL<0> Selection for All Families
VCOSEL[0] Description
0 Fast PLL lock acquisition time with high tracking jitter. Refer to the corresponding datasheet for specific
value and definition.
1 Slow PLL lock acquisition time with low tracking jitter. Refer to the corresponding datasheet for specific
value and definition.

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Software Configuration
SmartGen automatically generates the desired CCC functional block by configuring the control bits, and
allows the user to select two CCC modes: Static PLL and Delayed Clock (CLKDLY).

Static PLL Configuration

The newly implemented Visual PLL Configuration Wizard feature provides the user a quick and easy way
to configure the PLL with the desired settings (Figure 4-23). The user can invoke SmartGen to set the
parameters and generate the netlist file with the appropriate flash configuration bits set for the CCCs. As
mentioned in "PLL Macro Block Diagram" on page 69, the input reference clock CLKA can be configured
to be driven by Hardwired I/O, External I/O, or Core Logic. The user enters the desired settings for all the
parameters (output frequency, output selection, output phase adjustment, clock delay, feedback delay,
and system delay). Notice that the actual values (divider values, output frequency, delay values, and
phase) are shown to aid the user in reaching the desired design frequency in real time. These values are
typical-case data. Best- and worst-case data can be observed through static timing analysis in
SmartTime within Designer.
For dynamic configuration, the CCC parameters are defined using either the external JTAG port or an
internally defined serial interface via the built-in dynamic shift register. This feature provides the ability to
compensate for changes in the external environment.

VCO Clock Frequency Programmable Output Delay Elements

Input
Selection

Fixed System Delay

Output
Selection
Feedback Selection (Feedback MUX)

Figure 4-23 • Visual PLL Configuration Wizard

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Feedback Configuration
The PLL provides both internal and external feedback delays. Depending on the configuration, various
combinations of feedback delays can be achieved.
Internal Feedback Configuration
This configuration essentially sets the feedback multiplexer to route the VCO output of the PLL core as
the input to the feedback of the PLL. The feedback signal can be processed with the fixed system and
the adjustable feedback delay, as shown in Figure 4-24. The dividers are automatically configured by
SmartGen based on the user input.
Indicated below is the System Delay pull-down menu. The System Delay can be bypassed by setting it to
0. When set, it adds a 2 ns delay to the feedback path (which results in delay advancement of the output
clock by 2 ns).

Figure 4-24 • Internal Feedback with Selectable System Delay

Figure 4-25 shows the controllable Feedback Delay. If set properly in conjunction with the fixed System
Delay, the total output delay can be advanced significantly.

Figure 4-25 • Internal Feedback with Selectable Feedback Delay

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External Feedback Configuration

For certain applications, such as those requiring generation of PCB clocks that must be matched with
existing board delays, it is useful to implement an external feedback, EXTFB. The Phase Detector of the
PLL core will receive CLKA and EXTFB as inputs. EXTFB may be processed by the fixed System Delay
element as well as the M divider element. The EXTFB option is currently not supported.
After setting all the required parameters, users can generate one or more PLL configurations with HDL or
EDIF descriptions by clicking the Generate button. SmartGen gives the option of saving session results
and messages in a log file:
****************
Macro Parameters
****************

Name : test_pll
Family : ProASIC3E
Output Format : VHDL
Type : Static PLL
Input Freq(MHz) : 10.000
CLKA Source : Hardwired I/O
Feedback Delay Value Index : 1
Feedback Mux Select : 2
XDLY Mux Select : No
Primary Freq(MHz) : 33.000
Primary PhaseShift : 0
Primary Delay Value Index : 1
Primary Mux Select : 4
Secondary1 Freq(MHz) : 66.000
Use GLB : YES
Use YB : YES
GLB Delay Value Index : 1
YB Delay Value Index : 1
Secondary1 PhaseShift : 0
Secondary1 Mux Select : 4
Secondary2 Freq(MHz) : 101.000
Use GLC : YES
Use YC : NO
GLC Delay Value Index : 1
YC Delay Value Index : 1
Secondary2 PhaseShift : 0
Secondary2 Mux Select : 4

…
…
…

Primary Clock frequency 33.333

Primary Clock Phase Shift 0.000
Primary Clock Output Delay from CLKA 0.180

Secondary1 Clock frequency 66.667

Secondary1 Clock Phase Shift 0.000
Secondary1 Clock Global Output Delay from CLKA 0.180
Secondary1 Clock Core Output Delay from CLKA 0.625

Secondary2 Clock frequency 100.000

Secondary2 Clock Phase Shift 0.000
Secondary2 Clock Global Output Delay from CLKA 0.180

Below is an example Verilog HDL description of a legal PLL core configuration generated by SmartGen:

module test_pll(POWERDOWN,CLKA,LOCK,GLA);
input POWERDOWN, CLKA;
output LOCK, GLA;

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wire VCC, GND;

VCC VCC_1_net(.Y(VCC));
GND GND_1_net(.Y(GND));
PLL Core(.CLKA(CLKA), .EXTFB(GND), .POWERDOWN(POWERDOWN),
.GLA(GLA), .LOCK(LOCK), .GLB(), .YB(), .GLC(), .YC(),
.OADIV0(GND), .OADIV1(GND), .OADIV2(GND), .OADIV3(GND),
.OADIV4(GND), .OAMUX0(GND), .OAMUX1(GND), .OAMUX2(VCC),
.DLYGLA0(GND), .DLYGLA1(GND), .DLYGLA2(GND), .DLYGLA3(GND)
, .DLYGLA4(GND), .OBDIV0(GND), .OBDIV1(GND), .OBDIV2(GND),
.OBDIV3(GND), .OBDIV4(GND), .OBMUX0(GND), .OBMUX1(GND),
.OBMUX2(GND), .DLYYB0(GND), .DLYYB1(GND), .DLYYB2(GND),
.DLYYB3(GND), .DLYYB4(GND), .DLYGLB0(GND), .DLYGLB1(GND),
.DLYGLB2(GND), .DLYGLB3(GND), .DLYGLB4(GND), .OCDIV0(GND),
.OCDIV1(GND), .OCDIV2(GND), .OCDIV3(GND), .OCDIV4(GND),
.OCMUX0(GND), .OCMUX1(GND), .OCMUX2(GND), .DLYYC0(GND),
.DLYYC1(GND), .DLYYC2(GND), .DLYYC3(GND), .DLYYC4(GND),
.DLYGLC0(GND), .DLYGLC1(GND), .DLYGLC2(GND), .DLYGLC3(GND)
, .DLYGLC4(GND), .FINDIV0(VCC), .FINDIV1(GND), .FINDIV2(
VCC), .FINDIV3(GND), .FINDIV4(GND), .FINDIV5(GND),
.FINDIV6(GND), .FBDIV0(VCC), .FBDIV1(GND), .FBDIV2(VCC),
.FBDIV3(GND), .FBDIV4(GND), .FBDIV5(GND), .FBDIV6(GND),
.FBDLY0(GND), .FBDLY1(GND), .FBDLY2(GND), .FBDLY3(GND),
.FBDLY4(GND), .FBSEL0(VCC), .FBSEL1(GND), .XDLYSEL(GND),
.VCOSEL0(GND), .VCOSEL1(GND), .VCOSEL2(GND));
defparam Core.VCOFREQUENCY = 33.000;
endmodule

The "PLL Configuration Bits Description" section on page 90 provides descriptions of the PLL
configuration bits for completeness. The configuration bits are shown as busses only for purposes of
illustration. They will actually be broken up into individual pins in compilation libraries and all simulation
models. For example, the FBSEL[1:0] bus will actually appear as pins FBSEL1 and FBSEL0. The setting
of these select lines for the static PLL configuration is performed by the software and is completely
transparent to the user.

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Dynamic PLL Configuration

To generate a dynamically reconfigurable CCC, the user should select Dynamic CCC in the
configuration section of the SmartGen GUI (Figure 4-26). This will generate both the CCC core and the
configuration shift register / control bit MUX.

Figure 4-26 • SmartGen GUI

Even if dynamic configuration is selected in SmartGen, the user must still specify the static configuration
data for the CCC (Figure 4-27). The specified static configuration is used whenever the MODE signal is
set to LOW and the CCC is required to function in the static mode. The static configuration data can be
used as the default behavior of the CCC where required.

Figure 4-27 • Dynamic CCC Configuration in SmartGen

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When SmartGen is used to define the configuration that will be shifted in via the serial interface,
SmartGen prints out the values of the 81 configuration bits. For ease of use, several configuration bits
are automatically inferred by SmartGen when the dynamic PLL core is generated; however, <71:73>
(STATASEL, STATBSEL, STATCSEL) and <77:79> (DYNASEL, DYNBSEL, DYNCSEL) depend on the
input clock source of the corresponding CCC. Users must first run Layout in Designer to determine the
exact setting for these ports. After Layout is complete, generate the "CCC_Configuration" report by
choosing Tools > Reports > CCC_Configuration in the Designer software. Refer to "PLL Configuration
Bits Description" on page 90 for descriptions of the PLL configuration bits. For simulation purposes, bits
<71:73> and <78:80> are "don't care." Therefore, it is strongly suggested that SmartGen be used to
generate the correct configuration bit settings for the dynamic PLL core.
After setting all the required parameters, users can generate one or more PLL configurations with HDL or
EDIF descriptions by clicking the Generate button. SmartGen gives the option of saving session results
and messages in a log file:
****************
Macro Parameters
****************

Name : dyn_pll_hardio
Family : ProASIC3E
Output Format : VERILOG
Type : Dynamic CCC
Input Freq(MHz) : 30.000
CLKA Source : Hardwired I/O
Feedback Delay Value Index : 1
Feedback Mux Select : 1
XDLY Mux Select : No
Primary Freq(MHz) : 33.000
Primary PhaseShift : 0
Primary Delay Value Index : 1
Primary Mux Select : 4
Secondary1 Freq(MHz) : 40.000
Use GLB : YES
Use YB : NO
GLB Delay Value Index : 1
YB Delay Value Index : 1
Secondary1 PhaseShift : 0
Secondary1 Mux Select : 0
Secondary1 Input Freq(MHz) : 40.000
CLKB Source : Hardwired I/O
Secondary2 Freq(MHz) : 50.000
Use GLC : YES
Use YC : NO
GLC Delay Value Index : 1
YC Delay Value Index : 1
Secondary2 PhaseShift : 0
Secondary2 Mux Select : 0
Secondary2 Input Freq(MHz) : 50.000
CLKC Source : Hardwired I/O

Configuration Bits:
FINDIV[6:0] 0000101
FBDIV[6:0] 0100000
OADIV[4:0] 00100
OBDIV[4:0] 00000
OCDIV[4:0] 00000
OAMUX[2:0] 100
OBMUX[2:0] 000
OCMUX[2:0] 000
FBSEL[1:0] 01
FBDLY[4:0] 00000
XDLYSEL 0
DLYGLA[4:0] 00000
DLYGLB[4:0] 00000

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DLYGLC[4:0] 00000
DLYYB[4:0] 00000
DLYYC[4:0] 00000
VCOSEL[2:0] 100

Primary Clock Frequency 33.000

Primary Clock Phase Shift 0.000
Primary Clock Output Delay from CLKA 1.695

Secondary1 Clock Frequency 40.000

Secondary1 Clock Phase Shift 0.000
Secondary1 Clock Global Output Delay from CLKB 0.200

Secondary2 Clock Frequency 50.000

Secondary2 Clock Phase Shift 0.000
Secondary2 Clock Global Output Delay from CLKC 0.200

######################################
# Dynamic Stream Data
######################################
--------------------------------------
|NAME |SDIN |VALUE |TYPE |
--------------------------------------
|FINDIV |[6:0] |0000101 |EDIT |
|FBDIV |[13:7] |0100000 |EDIT |
|OADIV |[18:14] |00100 |EDIT |
|OBDIV |[23:19] |00000 |EDIT |
|OCDIV |[28:24] |00000 |EDIT |
|OAMUX |[31:29] |100 |EDIT |
|OBMUX |[34:32] |000 |EDIT |
|OCMUX |[37:35] |000 |EDIT |
|FBSEL |[39:38] |01 |EDIT |
|FBDLY |[44:40] |00000 |EDIT |
|XDLYSEL |[45] |0 |EDIT |
|DLYGLA |[50:46] |00000 |EDIT |
|DLYGLB |[55:51] |00000 |EDIT |
|DLYGLC |[60:56] |00000 |EDIT |
|DLYYB |[65:61] |00000 |EDIT |
|DLYYC |[70:66] |00000 |EDIT |
|STATASEL|[71] |X |MASKED |
|STATBSEL|[72] |X |MASKED |
|STATCSEL|[73] |X |MASKED |
|VCOSEL |[76:74] |100 |EDIT |
|DYNASEL |[77] |X |MASKED |
|DYNBSEL |[78] |X |MASKED |
|DYNCSEL |[79] |X |MASKED |
|RESETEN |[80] |1 |READONLY |

Below is the resultant Verilog HDL description of a legal dynamic PLL core configuration generated by
SmartGen:
module dyn_pll_macro(POWERDOWN, CLKA, LOCK, GLA, GLB, GLC, SDIN, SCLK, SSHIFT, SUPDATE,
MODE, SDOUT, CLKB, CLKC);

input POWERDOWN, CLKA;

output LOCK, GLA, GLB, GLC;
input SDIN, SCLK, SSHIFT, SUPDATE, MODE;
output SDOUT;
input CLKB, CLKC;

wire VCC, GND;

VCC VCC_1_net(.Y(VCC));
GND GND_1_net(.Y(GND));

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DYNCCC Core(.CLKA(CLKA), .EXTFB(GND), .POWERDOWN(POWERDOWN), .GLA(GLA), .LOCK(LOCK),

.CLKB(CLKB), .GLB(GLB), .YB(), .CLKC(CLKC), .GLC(GLC), .YC(), .SDIN(SDIN),
.SCLK(SCLK), .SSHIFT(SSHIFT), .SUPDATE(SUPDATE), .MODE(MODE), .SDOUT(SDOUT),
.OADIV0(GND), .OADIV1(GND), .OADIV2(VCC), .OADIV3(GND), .OADIV4(GND), .OAMUX0(GND),
.OAMUX1(GND), .OAMUX2(VCC), .DLYGLA0(GND), .DLYGLA1(GND), .DLYGLA2(GND),
.DLYGLA3(GND), .DLYGLA4(GND), .OBDIV0(GND), .OBDIV1(GND), .OBDIV2(GND),
.OBDIV3(GND), .OBDIV4(GND), .OBMUX0(GND), .OBMUX1(GND), .OBMUX2(GND), .DLYYB0(GND),
.DLYYB1(GND), .DLYYB2(GND), .DLYYB3(GND), .DLYYB4(GND), .DLYGLB0(GND),
.DLYGLB1(GND), .DLYGLB2(GND), .DLYGLB3(GND), .DLYGLB4(GND), .OCDIV0(GND),
.OCDIV1(GND), .OCDIV2(GND), .OCDIV3(GND), .OCDIV4(GND), .OCMUX0(GND), .OCMUX1(GND),
.OCMUX2(GND), .DLYYC0(GND), .DLYYC1(GND), .DLYYC2(GND), .DLYYC3(GND), .DLYYC4(GND),
.DLYGLC0(GND), .DLYGLC1(GND), .DLYGLC2(GND), .DLYGLC3(GND), .DLYGLC4(GND),
.FINDIV0(VCC), .FINDIV1(GND), .FINDIV2(VCC), .FINDIV3(GND), .FINDIV4(GND),
.FINDIV5(GND), .FINDIV6(GND), .FBDIV0(GND), .FBDIV1(GND), .FBDIV2(GND),
.FBDIV3(GND), .FBDIV4(GND), .FBDIV5(VCC), .FBDIV6(GND), .FBDLY0(GND), .FBDLY1(GND),
.FBDLY2(GND), .FBDLY3(GND), .FBDLY4(GND), .FBSEL0(VCC), .FBSEL1(GND),
.XDLYSEL(GND), .VCOSEL0(GND), .VCOSEL1(GND), .VCOSEL2(VCC));
defparam Core.VCOFREQUENCY = 165.000;

endmodule

Delayed Clock Configuration

The CLKDLY macro can be generated with the desired delay and input clock source (Hardwired I/O,
External I/O, or Core Logic), as in Figure 4-28.

Figure 4-28 • Delayed Clock Configuration Dialog Box

After setting all the required parameters, users can generate one or more PLL configurations with HDL or
EDIF descriptions by clicking the Generate button. SmartGen gives the option of saving session results
and messages in a log file:
****************
Macro Parameters
****************

Name : delay_macro
Family : ProASIC3
Output Format : Verilog
Type : Delayed Clock
Delay Index : 2
CLKA Source : Hardwired I/O

Total Clock Delay = 0.935 ns.

The resultant CLKDLY macro Verilog netlist is as follows:

module delay_macro(GL,CLK);

output GL;
input CLK;

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wire VCC, GND;

VCC VCC_1_net(.Y(VCC));
GND GND_1_net(.Y(GND));
CLKDLY Inst1(.CLK(CLK), .GL(GL), .DLYGL0(VCC), .DLYGL1(GND), .DLYGL2(VCC),
.DLYGL3(GND), .DLYGL4(GND));

endmodule

Detailed Usage Information

Clock Frequency Synthesis

Deriving clocks of various frequencies from a single reference clock is known as frequency synthesis.
The PLL has an input frequency range from 1.5 to 350 MHz. This frequency is automatically divided
down to a range between 1.5 MHz and 5.5 MHz by input dividers (not shown in Figure 4-19 on page 84)
between PLL macro inputs and PLL phase detector inputs. The VCO output is capable of an output
range from 24 to 350 MHz. With dividers before the input to the PLL core and following the VCO outputs,
the VCO output frequency can be divided to provide the final frequency range from 0.75 to 350 MHz.
Using SmartGen, the dividers are automatically set to achieve the closest possible matches to the
specified output frequencies.
Users should be cautious when selecting the desired PLL input and output frequencies and the I/O buffer
standard used to connect to the PLL input and output clocks. Depending on the I/O standards used for
the PLL input and output clocks, the I/O frequencies have different maximum limits. Refer to the family
datasheets for specifications of maximum I/O frequencies for supported I/O standards. Desired PLL input
or output frequencies will not be achieved if the selected frequencies are higher than the maximum I/O
frequencies allowed by the selected I/O standards. Users should be careful when selecting the I/O
standards used for PLL input and output clocks. Performing post-layout simulation can help detect this
type of error, which will be identified with pulse width violation errors. Users are strongly encouraged to
perform post-layout simulation to ensure the I/O standard used can provide the desired PLL input or
output frequencies. Users can also choose to cascade PLLs together to achieve the high frequencies
needed for their applications. Details of cascading PLLs are discussed in the "Cascading CCCs" section
on page 109.
In SmartGen, the actual generated frequency (under typical operating conditions) will be displayed
beside the requested output frequency value. This provides the ability to determine the exact frequency
that can be generated by SmartGen, in real time. The log file generated by SmartGen is a useful tool in
determining how closely the requested clock frequencies match the user specifications. For example,
assume a user specifies 101 MHz as one of the secondary output frequencies. If the best output
frequency that could be achieved were 100 MHz, the log file generated by SmartGen would indicate the
actual generated frequency.

Simulation Verification
The integration of the generated PLL and CLKDLY modules is similar to any VHDL component or Verilog
module instantiation in a larger design; i.e., there is no special requirement that users need to take into
account to successfully synthesize their designs.
For simulation purposes, users need to refer to the VITAL or Verilog library that includes the functional
description and associated timing parameters. Refer to the Software Tools section of the Microsemi SoC
Products Group website to obtain the family simulation libraries. If Designer is installed, these libraries
are stored in the following locations:
<Designer_Installation_Directory>\lib\vtl\95\proasic3.vhd
<Designer_Installation_Directory>\lib\vtl\95\proasic3e.vhd
<Designer_Installation_Directory>\lib\vlog\proasic3.v
<Designer_Installation_Directory>\lib\vlog\proasic3e.v
For Libero users, there is no need to compile the simulation libraries, as they are conveniently pre-
compiled in the ModelSim® Microsemi simulation tool.

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The following is an example of a PLL configuration utilizing the clock frequency synthesis and clock delay
adjustment features. The steps include generating the PLL core with SmartGen, performing simulation
for verification with ModelSim, and performing static timing analysis with SmartTime in Designer.
Parameters of the example PLL configuration:
Input Frequency – 20 MHz
Primary Output Requirement – 20 MHz with clock advancement of 3.02 ns
Secondary 1 Output Requirement – 40 MHz with clock delay of 2.515 ns
Figure 4-29 shows the SmartGen settings. Notice that the overall delays are calculated automatically,
allowing the user to adjust the delay elements appropriately to obtain the desired delays.

Figure 4-29 • SmartGen Settings

After confirming the correct settings, generate a structural netlist of the PLL and verify PLL core settings
by checking the log file:
Name : test_pll_delays
Family : ProASIC3E
Output Format : VHDL
Type : Static PLL
Input Freq(MHz) : 20.000
CLKA Source : Hardwired I/O
Feedback Delay Value Index : 21
Feedback Mux Select : 2
XDLY Mux Select : No
Primary Freq(MHz) : 20.000
Primary PhaseShift : 0
Primary Delay Value Index : 1
Primary Mux Select : 4
Secondary1 Freq(MHz) : 40.000
Use GLB : YES
Use YB : NO
…
…
…
Primary Clock frequency 20.000
Primary Clock Phase Shift 0.000

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Clock Conditioning Circuits in Low Power Flash Devices and Mixed Signal FPGAs

Primary Clock Output Delay from CLKA -3.020

Secondary1 Clock frequency 40.000

Secondary1 Clock Phase Shift 0.000
Secondary1 Clock Global Output Delay from CLKA 2.515

Next, perform simulation in ModelSim to verify the correct delays. Figure 4-30 shows the simulation
results. The delay values match those reported in the SmartGen PLL Wizard.

Primary Clock Output Time Secondary1 Clock Global

Advancement from CLKA Output Delay from CLKA

Figure 4-30 • ModelSim Simulation Results

The timing can also be analyzed using SmartTime in Designer. The user should import the synthesized
netlist to Designer, perform Compile and Layout, and then invoke SmartTime. Go to Tools > Options
and change the maximum delay operating conditions to Typical Case. Then expand the Clock-to-Out
paths of GLA and GLB and the individual components of the path delays are shown. The path of GLA is
shown in Figure 4-31 on page 107 displaying the same delay value.

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Figure 4-31 • Static Timing Analysis Using SmartTime

Place-and-Route Stage Considerations

Several considerations must be noted to properly place the CCC macros for layout.
For CCCs with clock inputs configured with the Hardwired I/O–Driven option:
• PLL macros must have the clock input pad coming from one of the GmA* locations.
• CLKDLY macros must have the clock input pad coming from one of the Global I/Os.
If a PLL with a Hardwired I/O input is used at a CCC location and a Hardwired I/O–Driven CLKDLY
macro is used at the same CCC location, the clock input of the CLKDLY macro must be chosen from one
of the GmB* or GmC* pin locations. If the PLL is not used or is an External I/O–Driven or Core Logic–
Driven PLL, the clock input of the CLKDLY macro can be sourced from the GmA*, GmB*, or GmC* pin
locations.
For CCCs with clock inputs configured with the External I/O–Driven option, the clock input pad can be
assigned to any regular I/O location (IO******** pins). Note that since global I/O pins can also be used as
regular I/Os, regardless of CCC function (CLKDLY or PLL), clock inputs can also be placed in any of
these I/O locations.
By default, the Designer layout engine will place global nets in the design at one of the six chip globals.
When the number of globals in the design is greater than six, the Designer layout engine will
automatically assign additional globals to the quadrant global networks of the low power flash devices. If
the user wishes to decide which global signals should be assigned to chip globals (six available) and
which to the quadrant globals (three per quadrant for a total of 12 available), the assignment can be
achieved with PinEditor, ChipPlanner, or by importing a placement constraint file. Layout will fail if the

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global assignments are not allocated properly. See the "Physical Constraints for Quadrant Clocks"
section for information on assigning global signals to the quadrant clock networks.
Promoted global signals will be instantiated with CLKINT macros to drive these signals onto the global
network. This is automatically done by Designer when the Auto-Promotion option is selected. If the user
wishes to assign the signals to the quadrant globals instead of the default chip globals, this can done by
using ChipPlanner, by declaring a physical design constraint (PDC), or by importing a PDC file.

Physical Constraints for Quadrant Clocks

If it is necessary to promote global clocks (CLKBUF, CLKINT, PLL, CLKDLY) to quadrant clocks, the user
can define PDCs to execute the promotion. PDCs can be created using PDC commands (pre-compile) or
the MultiView Navigator (MVN) interface (post-compile). The advantage of using the PDC flow over the
MVN flow is that the Compile stage is able to automatically promote any regular net to a global net before
assigning it to a quadrant. There are three options to place a quadrant clock using PDC commands:
• Place a clock core (not hardwired to an I/O) into a quadrant clock location.
• Place a clock core (hardwired to an I/O) into an I/O location (set_io) or an I/O module location
(set_location) that drives a quadrant clock location.
• Assign a net driven by a regular net or a clock net to a quadrant clock using the following
command:
assign_local_clock -net <net name> -type quadrant <quadrant clock region>
where
<net name> is the name of the net assigned to the local user clock region.
<quadrant clock region> defines which quadrant the net should be assigned to. Quadrant
clock regions are defined as UL (upper left), UR (upper right), LL (lower left), and LR (lower right).
Note: If the net is a regular net, the software inserts a CLKINT buffer on the net.
For example:
assign_local_clock -net localReset -type quadrant UR

Keep in mind the following when placing quadrant clocks using MultiView Navigator:
Hardwired I/O–Driven CCCs
• Find the associated clock input port under the Ports tab, and place the input port at one of the
Gmn* locations using PinEditor or I/O Attribute Editor, as shown in Figure 4-32.

Figure 4-32 • Port Assignment for a CCC with Hardwired I/O Clock Input

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• Use quadrant global region assignments by finding the clock net associated with the CCC macro
under the Nets tab and creating a quadrant global region for the net, as shown in Figure 4-33.

Figure 4-33 • Quadrant Clock Assignment for a Global Net

External I/O–Driven CCCs

The above-mentioned recommendation for proper layout techniques will ensure the correct assignment.
It is possible that, especially with External I/O–Driven CCC macros, placement of the CCC macro in a
desired location may not be achieved. For example, assigning an input port of an External I/O–Driven
CCC near a particular CCC location does not guarantee global assignments to the desired location. This
is because the clock inputs of External I/O–Driven CCCs can be assigned to any I/O location; therefore,
it is possible that the CCC connected to the clock input will be routed to a location other than the one
closest to the I/O location, depending on resource availability and placement constraints.
Clock Placer
The clock placer is a placement engine for low power flash devices that places global signals on the chip
global and quadrant global networks. Based on the clock assignment constraints for the chip global and
quadrant global clocks, it will try to satisfy all constraints, as well as creating quadrant clock regions when
necessary. If the clock placer fails to create the quadrant clock regions for the global signals, it will report
an error and stop Layout.
The user must ensure that the constraints set to promote clock signals to quadrant global networks are
valid.

Cascading CCCs
The CCCs in low power flash devices can be cascaded. Cascading CCCs can help achieve more
accurate PLL output frequency results than those achievable with a single CCC. In addition, this
technique is useful when the user application requires the output clock of the PLL to be a multiple of the
reference clock by an integer greater than the maximum feedback divider value of the PLL (divide by
128) to achieve the desired frequency.
For example, the user application may require a 280 MHz output clock using a 2 MHz input reference
clock, as shown in Figure 4-34 on page 110.

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Clock Conditioning Circuits in Low Power Flash Devices and Mixed Signal FPGAs

Figure 4-34 • Cascade PLL Configuration

Using internal feedback, we know from EQ 4-1 on page 86 that the maximum achievable output
frequency from the primary output is
fGLA = fCLKA × m / (n × u) = 2 MHz × 128 / (1 × 1) = 256 MHz
EQ 4-5
Figure 4-35 shows the settings of the initial PLL. When configuring the initial PLL, specify the input to be
either Hardwired I/O–Driven or External I/O–Driven. This generates a netlist with the initial PLL routed
from an I/O. Do not specify the input to be Core Logic–Driven, as this prohibits the connection from the
I/O pin to the input of the PLL.

Figure 4-35 • First-Stage PLL Showing Input of 2 MHz and Output of 256 MHz

A second PLL can be connected serially to achieve the required frequency. EQ 4-1 on page 86 to EQ 4-3
on page 86 are extended as follows:
fGLA2 = fGLA × m2 / (n2 × u2) = fCLKA1 × m1 × m2 / (n1 × u1 × n2 × u2) – Primary PLL Output Clock
EQ 4-6
fGLB2 = fYB2 = fCLKA1 × m1 × m2 / (n1 × n2 × v1 × v2) – Secondary 1 PLL Output Clock(s)
EQ 4-7
fGLC2 = fYC2 = fCLKA1 × m1 × m2 / (n1 × n2 × w1 × w2) – Secondary 2 PLL Output Clock(s)
EQ 4-8
In the example, the final output frequency (foutput) from the primary output of the second PLL will be as
follows (EQ 4-9):
foutput = fGLA2 = fGLA × m2 / (n2 × u2) = 256 MHz × 70 / (64 × 1) = 280 MHz
EQ 4-9
Figure 4-36 on page 111 shows the settings of the second PLL. When configuring the second PLL (or
any subsequent-stage PLLs), specify the input to be Core Logic–Driven. This generates a netlist with the
second PLL routed internally from the core. Do not specify the input to be Hardwired I/O–Driven or
External I/O–Driven, as these options prohibit the connection from the output of the first PLL to the input
of the second PLL.

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Figure 4-36 • Second-Stage PLL Showing Input of 256 MHz from First Stage and Final Output of 280 MHz

Figure 4-37 shows the simulation results, where the first PLL’s output period is 3.9 ns (~256 MHz), and
the stage 2 (final) output period is 3.56 ns (~280 MHz).

Stage 1 Output Clock Period Stage 2 Output Clock Period

Figure 4-37 • ModelSim Simulation Results

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Clock Conditioning Circuits in Low Power Flash Devices and Mixed Signal FPGAs

Recommended Board-Level Considerations

The power to the PLL core is supplied by VCCPLA/B/C/D/E/F (VCCPLx), and the associated ground
connections are supplied by VCOMPLA/B/C/D/E/F (VCOMPLx). When the PLLs are not used, the
Designer place-and-route tool automatically disables the unused PLLs to lower power consumption. The
user should tie unused VCCPLx and VCOMPLx pins to ground. Optionally, the PLL can be turned on/off
during normal device operation via the POWERDOWN port (see Table 4-3 on page 68).

PLL Power Supply Decoupling Scheme

The PLL core is designed to tolerate noise levels on the PLL power supply as specified in the datasheets.
When operated within the noise limits, the PLL will meet the output peak-to-peak jitter specifications
specified in the datasheets. User applications should always ensure the PLL power supply is powered
from a noise-free or low-noise power source.
However, in situations where the PLL power supply noise level is higher than the tolerable limits, various
decoupling schemes can be designed to suppress noise to the PLL power supply. An example is
provided in Figure 4-38. The VCCPLx and VCOMPLx pins correspond to the PLL analog power supply
and ground.
Microsemi strongly recommends that two ceramic capacitors (10 nF in parallel with 100 nF) be placed
close to the power pins (less than 1 inch away). A third generic 10 µF electrolytic capacitor is
recommended for low-frequency noise and should be placed farther away due to its large physical size.
Microsemi recommends that a 6.8 µH inductor be placed between the supply source and the capacitors
to filter out any low-/medium- and high-frequency noise. In addition, the PCB layers should be controlled
so the VCCPLx and VCOMPLx planes have the minimum separation possible, thus generating a good-
quality RF capacitor.
For more recommendations, refer to the Board-Level Considerations application note.
Recommended 100 nF capacitor:
• Producer BC Components, type X7R, 100 nF, 16 V
• BC Components part number: 0603B104K160BT
• Digi-Key part number: BC1254CT-ND
• Digi-Key part number: BC1254TR-ND
Recommended 10 nF capacitor:
• Surface-mount ceramic capacitor
• Producer BC Components, type X7R, 10 nF, 50 V
• BC Components part number: 0603B103K500BT
• Digi-Key part number: BC1252CT-ND
• Digi-Key part number: BC1252TR-ND

VCCPLx

IGLOO/e or 10 nF 100 nF 10 μF
Power
ProASIC3/E
Supply
Device

VCOMPLx

Figure 4-38 • Decoupling Scheme for One PLL (should be replicated for each PLL used)

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Conclusion
The advanced CCCs of the IGLOO and ProASIC3 devices are ideal for applications requiring precise
clock management. They integrate easily with the internal low-skew clock networks and provide flexible
frequency synthesis, clock deskewing, and/or time-shifting operations.

Related Documents

Application Notes
Board-Level Considerations
http://www.microsemi.com/soc/documents/ALL_AC276_AN.pdf

Datasheets
Fusion Family of Mixed Signal FPGAs
http://www.microsemi.com/soc/documents/Fusion_DS.pdf

User’s Guides
IGLOO, ProASIC3, SmartFusion, and Fusion Macro Library Guide
http://www.microsemi.com/soc/documents/pa3_libguide_ug.pdf

List of Changes
The following table lists critical changes that were made in each revision of the chapter.

Date Changes Page

August 2012 The "Implementing EXTFB in ProASIC3/E Devices" section is new (SAR 36647). 70
Table 4-7 • Delay Values in Libero SoC Software per Device Family was added to the 86
"Clock Delay Adjustment" section (SAR 22709).
The "Phase Adjustment" section was rewritten to explain better why the visual 87
CCC shows both the actual phase and the actual delay that is equivalent to this phase
shift (SAR 29647).
The hyperlink for the Board-Level Considerations application note was corrected (SAR 112, 113
36663)
December 2011 Figure 4-20 • PLL Block Diagram, Figure 4-22 • CCC Block Control Bits – Graphical 85, 89,
Representation of Assignments, and Table 4-12 • MUXA, MUXB, MUXC were revised 93
to change the phase shift assignments for PLLs 4 through 7 (SAR 33791).
June 2011 The description for RESETEN in Table 4-8 • Configuration Bit Descriptions for the 90
CCC Blocks was revised. The phrase "and should not be modified via dynamic
configuration" was deleted because RESETEN is read only (SAR 25949).
July 2010 This chapter is no longer published separately with its own part number and version N/A
but is now part of several FPGA fabric user’s guides.
Notes were added where appropriate to point out that IGLOO nano and ProASIC3 N/A
nano devices do not support differential inputs (SAR 21449).

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Clock Conditioning Circuits in Low Power Flash Devices and Mixed Signal FPGAs

Date Changes Page

v1.4 The"CCC Support in Microsemi’s Flash Devices" section was updated to include 63
(December 2008) IGLOO nano and ProASIC3 nano devices.
Figure 4-2 • CCC Options: Global Buffers with No Programmable Delay was revised to 64
add the CLKBIBUF macro.
The description of the reference clock was revised in Table 4-2 • Input and Output 65
Description of the CLKDLY Macro.
Figure 4-7 • Clock Input Sources (30 k gates devices and below) is new. Figure 4-8 • 72
Clock Input Sources Including CLKBUF, CLKBUF_LVDS/LVPECL, and CLKINT (60 k
gates devices and above) applies to 60 k gate devices and above.
The "IGLOO and ProASIC3" section was updated to include information for IGLOO 73
nano devices.
A note regarding Fusion CCCs was added to Figure 4-9 • Illustration of Hardwired I/O 74
(global input pins) Usage for IGLOO and ProASIC3 devices 60 k Gates and Larger
and the name of the figure was changed from Figure 4-8 • Illustration of Hardwired I/O
(global input pins) Usage. Figure 4-10 • Illustration of Hardwired I/O (global input pins)
Usage for IGLOO and ProASIC3 devices 30 k Gates and Smaller is new.
Table 4-5 • Number of CCCs by Device Size and Package was updated to include 78
IGLOO nano and ProASIC3 nano devices. Entries were added to note differences for
the CS81, CS121, and CS201 packages.
The "Clock Conditioning Circuits without Integrated PLLs" section was rewritten. 79
The "IGLOO and ProASIC3 CCC Locations" section was updated for nano devices. 81
Figure 4-13 • CCC Locations in the 15 k and 30 k Gate Devices was deleted. 4-20
v1.3 This document was updated to include Fusion and RT ProASIC3 device information. N/A
(October 2008) Please review the document very carefully.
The "CCC Support in Microsemi’s Flash Devices" section was updated. 63
In the "Global Buffer with Programmable Delay" section, the following sentence was 64
changed from:
"In this case, the I/O must be placed in one of the dedicated global I/O locations."
To
"In this case, the software will automatically place the dedicated global I/O in the
appropriate locations."
Figure 4-4 • CCC Options: Global Buffers with PLL was updated to include OADIVRST 67
and OADIVHALF.
In Figure 4-6 • CCC with PLL Block "fixed delay" was changed to "programmable 67
delay".
Table 4-3 • Input and Output Signals of the PLL Block was updated to include 68
OADIVRST and OADIVHALF descriptions.
Table 4-8 • Configuration Bit Descriptions for the CCC Blocks was updated to include 90
configuration bits 88 to 81. Note 2 is new. In addition, the description for bit <76:74>
was updated.
Table 4-16 • Fusion Dynamic CCC Clock Source Selection and Table 4-17 • Fusion 94
Dynamic CCC NGMUX Configuration are new.
Table 4-18 • Fusion Dynamic CCC Division by Half Configuration and Table 4-19 • 95
Configuration Bit <76:75> / VCOSEL<2:1> Selection for All Families are new.

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Date Changes Page

v1.2 The following changes were made to the family descriptions in Figure 4-1 • Overview 61
(June 2008) of the CCCs Offered in Fusion, IGLOO, and ProASIC3:
• ProASIC3L was updated to include 1.5 V.
• The number of PLLs for ProASIC3E was changed from five to six.
v1.1 Table 4-1 • Flash-Based FPGAs and the associated text were updated to include the 63
(March 2008) IGLOO PLUS family. The "IGLOO Terminology" section and "ProASIC3 Terminology"
section are new.
The "Global Input Selections" section was updated to include 15 k gate devices as 71
supported I/O types for globals, for CCC only.
Table 4-5 • Number of CCCs by Device Size and Package was revised to include 78
ProASIC3L, IGLOO PLUS, A3P015, AGL015, AGLP030, AGLP060, and AGLP125.
The "IGLOO and ProASIC3 CCC Locations" section was revised to include 15 k gate 81
devices in the exception statements, as they do not contain PLLs.
v1.0 Information about unlocking the PLL was removed from the "Dynamic PLL 87
(January 2008) Configuration" section.
In the "Dynamic PLL Configuration" section, information was added about running 100
Layout and determining the exact setting of the ports.
In Table 4-8 • Configuration Bit Descriptions for the CCC Blocks, the following bits 90
were updated to delete "transport to the user" and reference the footnote at the bottom
of the table: 79 to 71.

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5 – FlashROM in Microsemi’s Low Power Flash
Devices

Introduction
The Fusion, IGLOO, and ProASIC3 families of low power flash-based devices have a dedicated
nonvolatile FlashROM memory of 1,024 bits, which provides a unique feature in the FPGA market. The
FlashROM can be read, modified, and written using the JTAG (or UJTAG) interface. It can be read but
not modified from the FPGA core. Only low power flash devices contain on-chip user nonvolatile memory
(NVM).

Architecture of User Nonvolatile FlashROM

Low power flash devices have 1 kbit of user-accessible nonvolatile flash memory on-chip that can be
read from the FPGA core fabric. The FlashROM is arranged in eight banks of 128 bits (16 bytes) during
programming. The 128 bits in each bank are addressable as 16 bytes during the read-back of the
FlashROM from the FPGA core. Figure 5-1 shows the FlashROM logical structure.
The FlashROM can only be programmed via the IEEE 1532 JTAG port. It cannot be programmed directly
from the FPGA core. When programming, each of the eight 128-bit banks can be selectively
reprogrammed. The FlashROM can only be reprogrammed on a bank boundary. Programming involves
an automatic, on-chip bank erase prior to reprogramming the bank. The FlashROM supports
synchronous read. The address is latched on the rising edge of the clock, and the new output data is
stable after the falling edge of the same clock cycle. For more information, refer to the timing diagrams in
the DC and Switching Characteristics chapter of the appropriate datasheet. The FlashROM can be read
on byte boundaries. The upper three bits of the FlashROM address from the FPGA core define the bank
being accessed. The lower four bits of the FlashROM address from the FPGA core define which of the 16
bytes in the bank is being accessed.

Byte Number in Bank 4 LSB of ADDR (READ)

15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
7
Bank Number 3 MSB of

6
ADDR (READ)

5
4
3
2
1
0

Figure 5-1 • FlashROM Architecture

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FlashROM in Microsemi’s Low Power Flash Devices

FlashROM Support in Flash-Based Devices

The flash FPGAs listed in Table 5-1 support the FlashROM feature and the functions described in this
document.

Table 5-1 • Flash-Based FPGAs

Series Family* Description
IGLOO IGLOO Ultra-low power 1.2 V to 1.5 V FPGAs with Flash*Freeze technology
IGLOOe Higher density IGLOO FPGAs with six PLLs and additional I/O standards
IGLOO nano The industry’s lowest-power, smallest-size solution
IGLOO PLUS IGLOO FPGAs with enhanced I/O capabilities
ProASIC3 ProASIC3 Low power, high-performance 1.5 V FPGAs
ProASIC3E Higher density ProASIC3 FPGAs with six PLLs and additional I/O standards
ProASIC3 nano Lowest-cost solution with enhanced I/O capabilities
ProASIC3L ProASIC3 FPGAs supporting 1.2 V to 1.5 V with Flash*Freeze technology
RT ProASIC3 Radiation-tolerant RT3PE600L and RT3PE3000L
Military ProASIC3/EL Military temperature A3PE600L, A3P1000, and A3PE3000L
Automotive ProASIC3 ProASIC3 FPGAs qualified for automotive applications
Fusion Fusion Mixed signal FPGA integrating ProASIC3 FPGA fabric, programmable
analog block, support for ARM® Cortex™-M1 soft processors, and flash
memory into a monolithic device
Note: *The device names link to the appropriate datasheet, including product brief, DC and switching characteristics,
and packaging information.

IGLOO Terminology
In documentation, the terms IGLOO series and IGLOO devices refer to all of the IGLOO devices as listed
in Table 5-1. Where the information applies to only one product line or limited devices, these exclusions
will be explicitly stated.

ProASIC3 Terminology
In documentation, the terms ProASIC3 series and ProASIC3 devices refer to all of the ProASIC3 devices
as listed in Table 5-1. Where the information applies to only one product line or limited devices, these
exclusions will be explicitly stated.
To further understand the differences between the IGLOO and ProASIC3 devices, refer to the Industry’s
Lowest Power FPGAs Portfolio.

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Bank 0 Bank 1
CCC

SRAM Block
4,608-Bit Dual-Port SRAM
or FIFO Block

OSC

I/Os

CCC/PLL

VersaTile
Bank 4

Bank 2
SRAM Block
4,608-Bit Dual-Port SRAM
ISP AES User Nonvolatile
Decryption FlashROM
Charge Pumps or FIFO Block

Flash Memory Blocks ADC Flash Memory Blocks

Analog Analog Analog Analog Analog Analog Analog Analog Analog Analog
Quad Quad Quad Quad Quad Quad Quad Quad Quad Quad

CCC
Bank 3

Figure 5-2 • Fusion Device Architecture Overview (AFS600)

CCC

RAM Block
4,608-Bit Dual-Port SRAM
or FIFO Block

I/Os

VersaTile

RAM Block
4,608-Bit Dual-Port SRAM
or FIFO Block
Nonvolatile Memory Charge Pumps
ISP AES Decryption FlashROM

Figure 5-3 • ProASIC3 and IGLOO Device Architecture

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FlashROM in Microsemi’s Low Power Flash Devices

FlashROM Applications
The SmartGen core generator is used to configure FlashROM content. You can configure each page
independently. SmartGen enables you to create and modify regions within a page; these regions can be
1 to 16 bytes long (Figure 5-4).

Byte Number in Page

15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
7
6
Page Number

5
4
3
2
1
0

Figure 5-4 • FlashROM Configuration

The FlashROM content can be changed independently of the FPGA core content. It can be easily
accessed and programmed via JTAG, depending on the security settings of the device. The SmartGen
core generator enables each region to be independently updated (described in the "Programming and
Accessing FlashROM" section on page 122). This enables you to change the FlashROM content on a
per-part basis while keeping some regions "constant" for all parts. These features allow the FlashROM to
be used in diverse system applications. Consider the following possible uses of FlashROM:
• Internet protocol (IP) addressing (wireless or fixed)
• System calibration settings
• Restoring configuration after unpredictable system power-down
• Device serialization and/or inventory control
• Subscription-based business models (e.g., set-top boxes)
• Secure key storage
• Asset management tracking
• Date stamping
• Version management

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FlashROM Security
Low power flash devices have an on-chip Advanced Encryption Standard (AES) decryption core,
combined with an enhanced version of the Microsemi flash-based lock technology (FlashLock®).
Together, they provide unmatched levels of security in a programmable logic device. This security
applies to both the FPGA core and FlashROM content. These devices use the 128-bit AES (Rijndael)
algorithm to encrypt programming files for secure transmission to the on-chip AES decryption core. The
same algorithm is then used to decrypt the programming file. This key size provides approximately 3.4 ×
1038 possible 128-bit keys. A computing system that could find a DES key in a second would take
approximately 149 trillion years to crack a 128-bit AES key. The 128-bit FlashLock feature in low power
flash devices works via a FlashLock security Pass Key mechanism, where the user locks or unlocks the
device with a user-defined key. Refer to the "Security in Low Power Flash Devices" section on page 235.
If the device is locked with certain security settings, functions such as device read, write, and erase are
disabled. This unique feature helps to protect against invasive and noninvasive attacks. Without the
correct Pass Key, access to the FPGA is denied. To gain access to the FPGA, the device first must be
unlocked using the correct Pass Key. During programming of the FlashROM or the FPGA core, you can
generate the security header programming file, which is used to program the AES key and/or FlashLock
Pass Key. The security header programming file can also be generated independently of the FlashROM
and FPGA core content. The FlashLock Pass Key is not stored in the FlashROM.
Low power flash devices with AES-based security allow for secure remote field updates over public
networks such as the Internet, and ensure that valuable intellectual property (IP) remains out of the
hands of IP thieves. Figure 5-5 shows this flow diagram.

Programming
Flash Device
Data
FlashROM

FPGA Core

AES AES-128
Encryption Same AES Key Decryption
Core

Untrusted
Medium

Encrypted Data Encrypted Data

Figure 5-5 • Programming FlashROM Using AES

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FlashROM in Microsemi’s Low Power Flash Devices

Programming and Accessing FlashROM

The FlashROM content can only be programmed via JTAG, but it can be read back selectively through
the JTAG programming interface, the UJTAG interface, or via direct FPGA core addressing. The pages of
the FlashROM can be made secure to prevent read-back via JTAG. In that case, read-back on these
secured pages is only possible by the FPGA core fabric or via UJTAG.
A 7-bit address from the FPGA core defines which of the eight pages (three MSBs) is being read, and
which of the 16 bytes within the selected page (four LSBs) are being read. The FlashROM content can
be read on a random basis; the access time is 10 ns for a device supporting commercial specifications.
The FPGA core will be powered down during writing of the FlashROM content. FPGA power-down during
FlashROM programming is managed on-chip, and FPGA core functionality is not available during
programming of the FlashROM. Table 5-2 summarizes various FlashROM access scenarios.

Table 5-2 • FlashROM Read/Write Capabilities by Access Mode

Access Mode FlashROM Read FlashROM Write
JTAG Yes Yes
UJTAG Yes No
FPGA core Yes No

Figure 5-6 shows the accessing of the FlashROM using the UJTAG macro. This is similar to FPGA core
access, where the 7-bit address defines which of the eight pages (three MSBs) is being read and which
of the 16 bytes within the selected page (four LSBs) are being read. Refer to the "UJTAG Applications in
Microsemi’s Low Power Flash Devices" section on page 297 for details on using the UJTAG macro to
read the FlashROM.
Figure 5-7 on page 123 and Figure 5-8 on page 123 show the FlashROM access from the JTAG port.
The FlashROM content can be read on a random basis. The three-bit address defines which page is
being read or updated.

UJTAG
Address Generation and
Data Serialization
UIREG [7:0] Enable
FlashROM
RESET
TDO
URSTB Addr [6:0]
Control Addr [6:0]
TDI UDRUPD
UDRCK CLK
TMS Data [7:0] Data[7:0]
UDRCAP SDI
TCK UDRSH SDO

UTDI
TRST
UTDO

Figure 5-6 • Block Diagram of Using UJTAG to Read FlashROM Contents

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7-Bit Address from Core

1110000

4-Bit Word Address

0000

Word Number in Page 4 LSB of ADDR (READ)

Page Number
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
111
7
3-Bit Page Address 6
5
ADDR (READ)

4
3 MSB of

3
2
1
0
8-Bit Data

8-Bit Data
to FPGA Core

8-Bit Data from Page 7 Word 0

Figure 5-7 • Accessing FlashROM Using FPGA Core

...........................00001:128 Bit Data

To/From JTAG Interface
4-Bit Page Address
from JTAG Interface
Word Number in Page 4 LSB of ADDR (READ)
Page Number

15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
7
6
5
ADDR (READ)

4
3 MSB of

3
2
1
0

Figure 5-8 • Accessing FlashROM Using JTAG Port

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FlashROM in Microsemi’s Low Power Flash Devices

FlashROM Design Flow

The Microsemi Libero System-on-Chip (SoC) software has extensive FlashROM support, including
FlashROM generation, instantiation, simulation, and programming. Figure 5-9 shows the user flow
diagram. In the design flow, there are three main steps:
1. FlashROM generation and instantiation in the design
2. Simulation of FlashROM design
3. Programming file generation for FlashROM design

SmartGen

UFC FlashROM MEM

File Netlist File

User
Simulator
Design

Synthesis

User
Netlist
Back-
Annotated
Netlist
Designer

Core Security
Map Header
Options

FlashPoint

Programmer

Programming
Files

Figure 5-9 • FlashROM Design Flow

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FlashROM Generation and Instantiation in the Design

The SmartGen core generator, available in Libero SoC and Designer, is the only tool that can be used to
generate the FlashROM content. SmartGen has several user-friendly features to help generate the
FlashROM contents. Instead of selecting each byte and assigning values, you can create a region within
a page, modify the region, and assign properties to that region. The FlashROM user interface, shown in
Figure 5-10, includes the configuration grid, existing regions list, and properties field. The properties field
specifies the region-specific information and defines the data used for that region. You can assign values
to the following properties:
1. Static Fixed Data—Enables you to fix the data so it cannot be changed during programming time.
This option is useful when you have fixed data stored in this region, which is required for the
operation of the design in the FPGA. Key storage is one example.
2. Static Modifiable Data—Select this option when the data in a particular region is expected to be
static data (such as a version number, which remains the same for a long duration but could
conceivably change in the future). This option enables you to avoid changing the value every time
you enter new data.
3. Read from File—This provides the full flexibility of FlashROM usage to the customer. If you have
a customized algorithm for generating the FlashROM data, you can specify this setting. You can
then generate a text file with data for as many devices as you wish to program, and load that into
the FlashPoint programming file generation software to get programming files that include all the
data. SmartGen will optionally pass the location of the file where the data is stored if the file is
specified in SmartGen. Each text file has only one type of data format (binary, decimal, hex, or
ASCII text). The length of each data file must be shorter than or equal to the selected region
length. If the data is shorter than the selected region length, the most significant bits will be
padded with 0s. For multiple text files for multiple regions, the first lines are for the first device. In
SmartGen, Load Sim. Value From File allows you to load the first device data in the MEM file for
simulation.
4. Auto Increment/Decrement—This scenario is useful when you specify the contents of FlashROM
for a large number of devices in a series. You can specify the step value for the serial number and
a maximum value for inventory control. During programming file generation, the actual number of
devices to be programmed is specified and a start value is fed to the software.

Figure 5-10 • SmartGen GUI of the FlashROM

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FlashROM in Microsemi’s Low Power Flash Devices

SmartGen allows you to generate the FlashROM netlist in VHDL, Verilog, or EDIF format. After the
FlashROM netlist is generated, the core can be instantiated in the main design like other SmartGen
cores. Note that the macro library name for FlashROM is UFROM. The following is a sample FlashROM
VHDL netlist that can be instantiated in the main design:
library ieee;
use ieee.std_logic_1164.all;
library fusion;

entity FROM_a is
port( ADDR : in std_logic_vector(6 downto 0); DOUT : out std_logic_vector(7 downto 0));
end FROM_a;

architecture DEF_ARCH of FROM_a is

component UFROM
generic (MEMORYFILE:string);
port(DO0, DO1, DO2, DO3, DO4, DO5, DO6, DO7 : out std_logic;
ADDR0, ADDR1, ADDR2, ADDR3, ADDR4, ADDR5, ADDR6 : in std_logic := 'U') ;
end component;

component GND
port( Y : out std_logic);
end component;

signal U_7_PIN2 : std_logic ;

begin

GND_1_net : GND port map(Y => U_7_PIN2);

UFROM0 : UFROM
generic map(MEMORYFILE => "FROM_a.mem")
port map(DO0 => DOUT(0), DO1 => DOUT(1), DO2 => DOUT(2), DO3 => DOUT(3), DO4 => DOUT(4),
DO5 => DOUT(5), DO6 => DOUT(6), DO7 => DOUT(7), ADDR0 => ADDR(0), ADDR1 => ADDR(1),
ADDR2 => ADDR(2), ADDR3 => ADDR(3), ADDR4 => ADDR(4), ADDR5 => ADDR(5),
ADDR6 => ADDR(6));

end DEF_ARCH;

SmartGen generates the following files along with the netlist. These are located in the SmartGen folder
for the Libero SoC project.
1. MEM (Memory Initialization) file
2. UFC (User Flash Configuration) file
3. Log file
The MEM file is used for simulation, as explained in the "Simulation of FlashROM Design" section on
page 127. The UFC file, generated by SmartGen, has the FlashROM configuration for single or multiple
devices and is used during STAPL generation. It contains the region properties and simulation values.
Note that any changes in the MEM file will not be reflected in the UFC file. Do not modify the UFC to
change FlashROM content. Instead, use the SmartGen GUI to modify the FlashROM content. See the
"Programming File Generation for FlashROM Design" section on page 127 for a description of how the
UFC file is used during the programming file generation. The log file has information regarding the file
type and file location.

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Simulation of FlashROM Design

The MEM file has 128 rows of 8 bits, each representing the contents of the FlashROM used for
simulation. For example, the first row represents page 0, byte 0; the next row is page 0, byte 1; and so
the pattern continues. Note that the three MSBs of the address define the page number, and the four
LSBs define the byte number. So, if you send address 0000100 to FlashROM, this corresponds to the
page 0 and byte 4 location, which is the fifth row in the MEM file. SmartGen defaults to 0s for any
unspecified location of the FlashROM. Besides using the MEM file generated by SmartGen, you can
create a binary file with 128 rows of 8 bits each and use this as a MEM file. Microsemi recommends that
you use different file names if you plan to generate multiple MEM files. During simulation, Libero SoC
passes the MEM file used as the generic file in the netlist, along with the design files and testbench. If
you want to use different MEM files during simulation, you need to modify the generic file reference in the
netlist.
…………………
UFROM0: UFROM
--generic map(MEMORYFILE => "F:\Appsnotes\FROM\test_designs\testa\smartgen\FROM_a.mem")
--generic map(MEMORYFILE => "F:\Appsnotes\FROM\test_designs\testa\smartgen\FROM_b.mem")
…………………….
The VITAL and Verilog simulation models accept the generics passed by the netlist, read the MEM file,
and perform simulation with the data in the file.

Programming File Generation for FlashROM Design

FlashPoint is the programming software used to generate the programming files for flash devices.
Depending on the applications, you can use the FlashPoint software to generate a STAPL file with
different FlashROM contents. In each case, optional AES decryption is available. To generate a STAPL
file that contains the same FPGA core content and different FlashROM contents, the FlashPoint software
needs an Array Map file for the core and UFC file(s) for the FlashROM. This final STAPL file represents
the combination of the logic of the FPGA core and FlashROM content.
FlashPoint generates the STAPL files you can use to program the desired FlashROM page and/or FPGA
core of the FPGA device contents. FlashPoint supports the encryption of the FlashROM content and/or
FPGA Array configuration data. In the case of using the FlashROM for device serialization, a sequence
of unique FlashROM contents will be generated. When generating a programming file with multiple
unique FlashROM contents, you can specify in FlashPoint whether to include all FlashROM content in a
single STAPL file or generate a different STAPL file for each FlashROM (Figure 5-11). The programming
software (FlashPro) handles the single STAPL file that contains the FlashROM content from multiple
devices. It enables you to program the FlashROM content into a series of devices sequentially
(Figure 5-11). See the FlashPro User’s Guide for information on serial programming.

UFC File for UFC File for

Single FlashROM Multiple FlashROM
Contents Contents

FPGA Array FPGA Array

Map File Map File
FlashPoint FlashPoint

Security Settings Security Settings

Single Single Single

STAPL STAPL STAPL
File File File

Figure 5-11 • Single or Multiple Programming File Generation

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FlashROM in Microsemi’s Low Power Flash Devices

Figure 5-12 shows the programming file generator, which enables different STAPL file generation
methods. When you select Program FlashROM and choose the UFC file, the FlashROM Settings
window appears, as shown in Figure 5-13. In this window, you can select the FlashROM page you want
to program and the data value for the configured regions. This enables you to use a different page for
different programming files.

Figure 5-12 • Programming File Generator

Figure 5-13 • Setting FlashROM during Programming File Generation

The programming hardware and software can load the FlashROM with the appropriate STAPL file.
Programming software handles the single STAPL file that contains multiple FlashROM contents for
multiple devices, and programs the FlashROM in sequential order (e.g., for device serialization). This
feature is supported in the programming software. After programming with the STAPL file, you can run
DEVICE_INFO to check the FlashROM content.

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DEVICE_INFO displays the FlashROM content, serial number, Design Name, and checksum, as shown
below:
EXPORT IDCODE[32] = 123261CF
EXPORT SILSIG[32] = 00000000
User information :
CHECKSUM: 61A0
Design Name: TOP
Programming Method: STAPL
Algorithm Version: 1
Programmer: UNKNOWN
=========================================
FlashROM Information :
EXPORT Region_7_0[128] = FFFFFFFFFFFFFFFFFFFFFFFFFFFFFFFF
=========================================
Security Setting :
Encrypted FlashROM Programming Enabled.
Encrypted FPGA Array Programming Enabled.
=========================================
The Libero SoC file manager recognizes the UFC and MEM files and displays them in the appropriate
view. Libero SoC also recognizes the multiple programming files if you choose the option to generate
multiple files for multiple FlashROM contents in Designer. These features enable a user-friendly flow for
the FlashROM generation and programming in Libero SoC.

Custom Serialization Using FlashROM

You can use FlashROM for device serialization or inventory control by using the Auto Inc region or Read
From File region. FlashPoint will automatically generate the serial number sequence for the Auto Inc
region with the Start Value, Max Value, and Step Value provided. If you have a unique serial number
generation scheme that you prefer, the Read From File region allows you to import the file with your
serial number scheme programmed into the region. See the FlashPro User's Guide for custom
serialization file format information.
The following steps describe how to perform device serialization or inventory control using FlashROM:
1. Generate FlashROM using SmartGen. From the Properties section in the FlashROM Settings
dialog box, select the Auto Inc or Read From File region. For the Auto Inc region, specify the
desired step value. You will not be able to modify this value in the FlashPoint software.
2. Go through the regular design flow and finish place-and-route.
3. Select Programming File in Designer and open Generate Programming File (Figure 5-12 on
page 128).
4. Click Program FlashROM, browse to the UFC file, and click Next. The FlashROM Settings
window appears, as shown in Figure 5-13 on page 128.
5. Select the FlashROM page you want to program and the data value for the configured regions.
The STAPL file generated will contain only the data that targets the selected FlashROM page.
6. Modify properties for the serialization.
– For the Auto Inc region, specify the Start and Max values.
– For the Read From File region, select the file name of the custom serialization file.
7. Select the FlashROM programming file type you want to generate from the two options below:
– Single programming file for all devices: generates one programming file with all FlashROM
values.
– One programming file per device: generates a separate programming file for each FlashROM
value.
8. Enter the number of devices you want to program and generate the required programming file.
9. Open the programming software and load the programming file. The programming software,
FlashPro3 and Silicon Sculptor II, supports the device serialization feature. If, for some reason,
the device fails to program a part during serialization, the software allows you to reuse or skip the
serial data. Refer to the FlashPro User’s Guide for details.

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Conclusion
The Fusion, IGLOO, and ProASIC3 families are the only FPGAs that offer on-chip FlashROM support.
This document presents information on the FlashROM architecture, possible applications, programming,
access through the JTAG and UJTAG interface, and integration into your design. In addition, the Libero
tool set enables easy creation and modification of the FlashROM content.
The nonvolatile FlashROM block in the FPGA can be customized, enabling multiple applications.
Additionally, the security offered by the low power flash devices keeps both the contents of FlashROM
and the FPGA design safe from system over-builders, system cloners, and IP thieves.

Related Documents

User’s Guides
FlashPro User’s Guide
http://www.microsemi.com/documents/FlashPro_UG.pdf

List of Changes
The following table lists critical changes that were made in each revision of the chapter.

Date Changes Page

July 2010 This chapter is no longer published separately with its own part number and version N/A
but is now part of several FPGA fabric user’s guides.
v1.4 IGLOO nano and ProASIC3 nano devices were added to Table 5-1 • Flash-Based 118
(December 2008) FPGAs.
v1.3 The "FlashROM Support in Flash-Based Devices" section was revised to include 118
(October 2008) new families and make the information more concise.
Figure 5-2 • Fusion Device Architecture Overview (AFS600) was replaced. 119, 121
Figure 5-5 • Programming FlashROM Using AES was revised to change "Fusion" to
"Flash Device."
The FlashPoint User’s Guide was removed from the "User’s Guides" section, as its 130
content is now part of the FlashPro User’s Guide.
v1.2 The following changes were made to the family descriptions in Table 5-1 • Flash- 118
(June 2008) Based FPGAs:
• ProASIC3L was updated to include 1.5 V.
• The number of PLLs for ProASIC3E was changed from five to six.
v1.1 The chapter was updated to include the IGLOO PLUS family and information N/A
(March 2008) regarding 15 k gate devices. The "IGLOO Terminology" section and "ProASIC3
Terminology" section are new.

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6 – SRAM and FIFO Memories in Microsemi's Low
Power Flash Devices

Introduction
As design complexity grows, greater demands are placed upon an FPGA's embedded memory. Fusion,
IGLOO, and ProASIC3 devices provide the flexibility of true dual-port and two-port SRAM blocks. The
embedded memory, along with built-in, dedicated FIFO control logic, can be used to create cascading
RAM blocks and FIFOs without using additional logic gates.
IGLOO, IGLOO PLUS, and ProASIC3L FPGAs contain an additional feature that allows the device to be
put in a low power mode called Flash*Freeze. In this mode, the core draws minimal power (on the order
of 2 to 127 µW) and still retains values on the embedded SRAM/FIFO and registers. Flash*Freeze
technology allows the user to switch to Active mode on demand, thus simplifying power management
and the use of SRAM/FIFOs.

Device Architecture
The low power flash devices feature up to 504 kbits of RAM in 4,608-bit blocks (Figure 6-1 on page 132
and Figure 6-2 on page 133). The total embedded SRAM for each device can be found in the
datasheets. These memory blocks are arranged along the top and bottom of the device to allow better
access from the core and I/O (in some devices, they are only available on the north side of the device).
Every RAM block has a flexible, hardwired, embedded FIFO controller, enabling the user to implement
efficient FIFOs without sacrificing user gates.
In the IGLOO and ProASIC3 families of devices, the following memories are supported:
• 30 k gate devices and smaller do not support SRAM and FIFO.
• 60 k and 125 k gate devices support memories on the north side of the device only.
• 250 k devices and larger support memories on the north and south sides of the device.
In Fusion devices, the following memories are supported:
• AFS090 and AFS250 support memories on the north side of the device only.
• AFS600 and AFS1500 support memories on the north and south sides of the device.

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Bank 0
CCC

RAM Block
4,608-Bit Dual-Port
SRAM or FIFO Block
Bank 3

Bank 1
I/Os

VersaTile
Bank 3

Bank 1
RAM Block
ISP AES User Nonvolatile Flash*Freeze Charge
4,608-Bit Dual-Port
Decryption 1 FlashRom Technology 2 Pumps SRAM or FIFO Block

Bank 2
Notes:
1. AES decryption not supported in 30 k gate devices and smaller.
2. Flash*Freeze is supported in all IGLOO devices and the ProASIC3L devices.
Figure 6-1 • IGLOO and ProASIC3 Device Architecture Overview

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Bank 0 Bank 1
CCC/PLL

RAM Block
4,608-Bit Dual-Port SRAM
or FIFO Block

OSC

I/Os

CCC

VersaTile
Bank 4

Bank 2
RAM Block
4,608-Bit Dual-Port SRAM
ISP AES User Nonvolatile
Charge Pumps or FIFO Block
Decryption FlashROM (FROM)

Flash Array ADC Flash Array

Analog Analog Analog Analog Analog Analog Analog Analog Analog Analog
Quad Quad Quad Quad Quad Quad Quad Quad Quad Quad

Bank 3

Figure 6-2 • Fusion Device Architecture Overview (AFS600)

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SRAM/FIFO Support in Flash-Based Devices

The flash FPGAs listed in Table 6-1 support SRAM and FIFO blocks and the functions described in this
document.

Table 6-1 • Flash-Based FPGAs

Series Family* Description
IGLOO IGLOO Ultra-low power 1.2 V to 1.5 V FPGAs with Flash*Freeze technology
IGLOOe Higher density IGLOO FPGAs with six PLLs and additional I/O standards
IGLOO nano The industry’s lowest-power, smallest-size solution
IGLOO PLUS IGLOO FPGAs with enhanced I/O capabilities
ProASIC3 ProASIC3 Low power, high-performance 1.5 V FPGAs
ProASIC3E Higher density ProASIC3 FPGAs with six PLLs and additional I/O standards
ProASIC3 nano Lowest-cost solution with enhanced I/O capabilities
ProASIC3L ProASIC3 FPGAs supporting 1.2 V to 1.5 V with Flash*Freeze technology
RT ProASIC3 Radiation-tolerant RT3PE600L and RT3PE3000L
Military ProASIC3/EL Military temperature A3PE600L, A3P1000, and A3PE3000L
Automotive ProASIC3 ProASIC3 FPGAs qualified for automotive applications
Fusion Fusion Mixed signal FPGA integrating ProASIC3 FPGA fabric, programmable
analog block, support for ARM® Cortex™-M1 soft processors, and flash
memory into a monolithic device
Note: *The device names link to the appropriate datasheet, including product brief, DC and switching characteristics,
and packaging information.

IGLOO Terminology
In documentation, the terms IGLOO series and IGLOO devices refer to all of the IGLOO devices as listed
in Table 6-1. Where the information applies to only one product line or limited devices, these exclusions
will be explicitly stated.

ProASIC3 Terminology
In documentation, the terms ProASIC3 series and ProASIC3 devices refer to all of the ProASIC3 devices
as listed in Table 6-1. Where the information applies to only one product line or limited devices, these
exclusions will be explicitly stated.
To further understand the differences between the IGLOO and ProASIC3 devices, refer to the Industry’s
Lowest Power FPGAs Portfolio.

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SRAM and FIFO Architecture

To meet the needs of high-performance designs, the memory blocks operate strictly in synchronous
mode for both read and write operations. The read and write clocks are completely independent, and
each can operate at any desired frequency up to 250 MHz.
• 4k×1, 2k×2, 1k×4, 512×9 (dual-port RAM—2 read / 2 write or 1 read / 1 write)
• 512×9, 256×18 (2-port RAM—1 read / 1 write)
• Sync write, sync pipelined / nonpipelined read
Automotive ProASIC3 devices support single-port SRAM capabilities or dual-port SRAM only under
specific conditions. Dual-port mode is supported if the clocks to the two SRAM ports are the same and
180° out of phase (i.e., the port A clock is the inverse of the port B clock). The Libero SoC software
macro libraries support a dual-port macro only. For use of this macro as a single-port SRAM, the inputs
and clock of one port should be tied off (grounded) to prevent errors during design compile. For use in
dual-port mode, the same clock with an inversion between the two clock pins of the macro should be
used in the design to prevent errors during compile.
The memory block includes dedicated FIFO control logic to generate internal addresses and external flag
logic (FULL, EMPTY, AFULL, AEMPTY).
Simultaneous dual-port read/write and write/write operations at the same address are allowed when
certain timing requirements are met.
During RAM operation, addresses are sourced by the user logic, and the FIFO controller is ignored. In
FIFO mode, the internal addresses are generated by the FIFO controller and routed to the RAM array by
internal MUXes.
The low power flash device architecture enables the read and write sizes of RAMs to be organized
independently, allowing for bus conversion. For example, the write size can be set to 256×18 and the
read size to 512×9.
Both the write width and read width for the RAM blocks can be specified independently with the WW
(write width) and RW (read width) pins. The different D×W configurations are 256×18, 512×9, 1k×4,
2k×2, and 4k×1. When widths of one, two, or four are selected, the ninth bit is unused. For example,
when writing nine-bit values and reading four-bit values, only the first four bits and the second four bits of
each nine-bit value are addressable for read operations. The ninth bit is not accessible.
Conversely, when writing four-bit values and reading nine-bit values, the ninth bit of a read operation will
be undefined. The RAM blocks employ little-endian byte order for read and write operations.

Memory Blocks and Macros

Memory blocks can be configured with many different aspect ratios, but are generically supported in the
macro libraries as one of two memory elements: RAM4K9 or RAM512X18. The RAM4K9 is configured
as a true dual-port memory block, and the RAM512X18 is configured as a two-port memory block. Dual-
port memory allows the RAM to both read from and write to either port independently. Two-port memory
allows the RAM to read from one port and write to the other using a common clock or independent read
and write clocks. If needed, the RAM4K9 blocks can be configured as two-port memory blocks. The
memory block can be configured as a FIFO by combining the basic memory block with dedicated FIFO
controller logic. The FIFO macro is named FIFO4KX18 (Figure 6-3 on page 136).
Clocks for the RAM blocks can be driven by the VersaNet (global resources) or by regular nets. When
using local clock segments, the clock segment region that encompasses the RAM blocks can drive the
RAMs. In the dual-port configuration (RAM4K9), each memory block port can be driven by either rising-
edge or falling-edge clocks. Each port can be driven by clocks with different edges. Though only a rising-
edge clock can drive the physical block itself, the Microsemi Designer software will automatically bubble-
push the inversion to properly implement the falling-edge trigger for the RAM block.

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RAM4K9 RAM512x18 FIFO4K18

ADDRA11 DOUTA8 RADDR8 RD17

ADDRA10 DOUTA7 RADDR7 RD16 RW2 RD17
RW1 RD16
RW0
ADDRA0 DOUTA0 RADDR0 RD0 WW2
DINA8 WW1
WW0 RD0
DINA7
ESTOP
FSTOP FULL
AFULL
DINA0 RW1 EMPTY
RW0 AEVAL11 AEMPTY
AEVAL10
WIDTHA1
WIDTHA0 PIPE
PIPEA AEVAL0
WMODEA AFVAL11
BLKA AFVAL10
WENA REN
CLKA RCLK

ADDRB11 DOUTB8 WADDR8 AFVAL0

ADDRB10 DOUTB7 WADDR7
REN
RBLK
ADDRB0 DOUTB0 RCLK
WADDR0
WD17
DINB8 WD16 WD17
DINB7 WD16

WD0
DINB0 WD0
WW1
WIDTHB1 WW0 WEN
WIDTHB0 WBLK
PIPEB WCLK
WMODEB
BLKB RPIPE
WENB WEN
CLKB WCLK
RESET RESET RESET

Notes:
1. Automotive ProASIC3 devices restrict RAM4K9 to a single port or to dual ports with the same clock 180° out of
phase (inverted) between clock pins. In single-port mode, inputs to port B should be tied to ground to prevent
errors during compile. This warning applies only to automotive ProASIC3 parts of certain revisions and earlier.
Contact Technical Support at [email protected] for information on the revision number for a particular lot
and date code.
2. For FIFO4K18, the same clock 180° out of phase (inverted) between clock pins should be used.
Figure 6-3 • Supported Basic RAM Macros

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SRAM Features
RAM4K9 Macro
RAM4K9 is the dual-port configuration of the RAM block (Figure 6-4). The RAM4K9 nomenclature refers
to both the deepest possible configuration and the widest possible configuration the dual-port RAM block
can assume, and does not denote a possible memory aspect ratio. The RAM block can be configured to
the following aspect ratios: 4,096×1, 2,048×2, 1,024×4, and 512×9. RAM4K9 is fully synchronous and
has the following features:
• Two ports that allow fully independent reads and writes at different frequencies
• Selectable pipelined or nonpipelined read
• Active-low block enables for each port
• Toggle control between read and write mode for each port
• Active-low asynchronous reset
• Pass-through write data or hold existing data on output. In pass-through mode, the data written to
the write port will immediately appear on the read port.
• Designer software will automatically facilitate falling-edge clocks by bubble-pushing the inversion
to previous stages.

Write Data Write Data

DINA DINB
Read Data Read Data
DOUTA DOUTB
Address Address
ADDRA ADDRB
BLK RAM4K9 BLK
BLKA BLKB
WEN WEN
WENA WENB
CLK CLK
CLKA CLKB

Reset
Note: For timing diagrams of the RAM signals, refer to the appropriate family datasheet.
Figure 6-4 • RAM4K9 Simplified Configuration

Signal Descriptions for RAM4K9

Note: Automotive ProASIC3 devices support single-port SRAM capabilities, or dual-port SRAM
only under specific conditions. Dual-port mode is supported if the clocks to the two SRAM
ports are the same and 180° out of phase (i.e., the port A clock is the inverse of the port B
clock). Since Libero SoC macro libraries support a dual-port macro only, certain
modifications must be made. These are detailed below.
The following signals are used to configure the RAM4K9 memory element:
WIDTHA and WIDTHB
These signals enable the RAM to be configured in one of four allowable aspect ratios (Table 6-2 on
page 138).
Note: When using the SRAM in single-port mode for Automotive ProASIC3 devices, WIDTHB
should be tied to ground.

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Table 6-2 • Allowable Aspect Ratio Settings for WIDTHA[1:0]

WIDTHA[1:0] WIDTHB[1:0] D×W
00 00 4k×1
01 01 2k×2
10 10 1k×4
11 11 512×9
Note: The aspect ratio settings are constant and cannot be changed on the fly.

BLKA and BLKB

These signals are active-low and will enable the respective ports when asserted. When a BLKx signal is
deasserted, that port’s outputs hold the previous value.
Note: When using the SRAM in single-port mode for Automotive ProASIC3 devices, BLKB should
be tied to ground.
WENA and WENB
These signals switch the RAM between read and write modes for the respective ports. A LOW on these
signals indicates a write operation, and a HIGH indicates a read.
Note: When using the SRAM in single-port mode for Automotive ProASIC3 devices, WENB should
be tied to ground.
CLKA and CLKB
These are the clock signals for the synchronous read and write operations. These can be driven
independently or with the same driver.
Note: For Automotive ProASIC3 devices, dual-port mode is supported if the clocks to the two
SRAM ports are the same and 180° out of phase (i.e., the port A clock is the inverse of the
port B clock). For use of this macro as a single-port SRAM, the inputs and clock of one port
should be tied off (grounded) to prevent errors during design compile.
PIPEA and PIPEB
These signals are used to specify pipelined read on the output. A LOW on PIPEA or PIPEB indicates a
nonpipelined read, and the data appears on the corresponding output in the same clock cycle. A HIGH
indicates a pipelined read, and data appears on the corresponding output in the next clock cycle.
Note: When using the SRAM in single-port mode for Automotive ProASIC3 devices, PIPEB should
be tied to ground. For use in dual-port mode, the same clock with an inversion between the
two clock pins of the macro should be used in the design to prevent errors during compile.
WMODEA and WMODEB
These signals are used to configure the behavior of the output when the RAM is in write mode. A LOW
on these signals makes the output retain data from the previous read. A HIGH indicates pass-through
behavior, wherein the data being written will appear immediately on the output. This signal is overridden
when the RAM is being read.
Note: When using the SRAM in single-port mode for Automotive ProASIC3 devices, WMODEB
should be tied to ground.
RESET
This active-low signal resets the control logic, forces the output hold state registers to zero, disables
reads and writes from the SRAM block, and clears the data hold registers when asserted. It does not
reset the contents of the memory array.
While the RESET signal is active, read and write operations are disabled. As with any asynchronous
reset signal, care must be taken not to assert it too close to the edges of active read and write clocks.
ADDRA and ADDRB
These are used as read or write addresses, and they are 12 bits wide. When a depth of less than 4 k is
specified, the unused high-order bits must be grounded (Table 6-3 on page 139).

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Note: When using the SRAM in single-port mode for Automotive ProASIC3 devices, ADDRB
should be tied to ground.
Table 6-3 • Address Pins Unused/Used for Various Supported Bus Widths
ADDRx
D×W Unused Used
4k×1 None [11:0]
2k×2 [11] [10:0]
1k×4 [11:10] [9:0]
512×9 [11:9] [8:0]
Note: The "x" in ADDRx implies A or B.

DINA and DINB

These are the input data signals, and they are nine bits wide. Not all nine bits are valid in all
configurations. When a data width less than nine is specified, unused high-order signals must be
grounded (Table 6-4).
Note: When using the SRAM in single-port mode for Automotive ProASIC3 devices, DINB should
be tied to ground.
DOUTA and DOUTB
These are the nine-bit output data signals. Not all nine bits are valid in all configurations. As with DINA
and DINB, high-order bits may not be used (Table 6-4). The output data on unused pins is undefined.
Table 6-4 • Unused/Used Input and Output Data Pins for Various Supported Bus Widths
DINx/DOUTx
D×W Unused Used
4k×1 [8:1] [0]
2k×2 [8:2] [1:0]
1k×4 [8:4] [3:0]
512×9 None [8:0]
Note: The "x" in DINx or DOUTx implies A or B.

RAM512X18 Macro
RAM512X18 is the two-port configuration of the same RAM block (Figure 6-5 on page 140). Like the
RAM4K9 nomenclature, the RAM512X18 nomenclature refers to both the deepest possible configuration
and the widest possible configuration the two-port RAM block can assume. In two-port mode, the RAM
block can be configured to either the 512×9 aspect ratio or the 256×18 aspect ratio. RAM512X18 is also
fully synchronous and has the following features:
• Dedicated read and write ports
• Active-low read and write enables
• Selectable pipelined or nonpipelined read
• Active-low asynchronous reset
• Designer software will automatically facilitate falling-edge clocks by bubble-pushing the inversion
to previous stages.

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Write Data Read Data

WD RD

Write Address Read Address

WADDR RADDR
RAM512X18

Write Enable Read Enable

WEN REN

Write CLK Read CLK

WCLK RCLK

Reset
Note: For timing diagrams of the RAM signals, refer to the appropriate family datasheet.
Figure 6-5 • 512X18 Two-Port RAM Block Diagram

Signal Descriptions for RAM512X18

RAM512X18 has slightly different behavior from RAM4K9, as it has dedicated read and write ports.
WW and RW
These signals enable the RAM to be configured in one of the two allowable aspect ratios (Table 6-5).

Table 6-5 • Aspect Ratio Settings for WW[1:0]

WW[1:0] RW[1:0] D×W
01 01 512×9
10 10 256×18
00, 11 00, 11 Reserved

WD and RD
These are the input and output data signals, and they are 18 bits wide. When a 512×9 aspect ratio is
used for write, WD[17:9] are unused and must be grounded. If this aspect ratio is used for read, RD[17:9]
are undefined.
WADDR and RADDR
These are read and write addresses, and they are nine bits wide. When the 256×18 aspect ratio is used
for write or read, WADDR[8] and RADDR[8] are unused and must be grounded.
WCLK and RCLK
These signals are the write and read clocks, respectively. They can be clocked on the rising or falling
edge of WCLK and RCLK.
WEN and REN
These signals are the write and read enables, respectively. They are both active-low by default. These
signals can be configured as active-high.
RESET
This active-low signal resets the control logic, forces the output hold state registers to zero, disables
reads and writes from the SRAM block, and clears the data hold registers when asserted. It does not
reset the contents of the memory array.
While the RESET signal is active, read and write operations are disabled. As with any asynchronous
reset signal, care must be taken not to assert it too close to the edges of active read and write clocks.
PIPE
This signal is used to specify pipelined read on the output. A LOW on PIPE indicates a nonpipelined
read, and the data appears on the output in the same clock cycle. A HIGH indicates a pipelined read, and
data appears on the output in the next clock cycle.

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SRAM Usage
The following descriptions refer to the usage of both RAM4K9 and RAM512X18.
Clocking
The dual-port SRAM blocks are only clocked on the rising edge. SmartGen allows falling-edge-triggered
clocks by adding inverters to the netlist, hence achieving dual-port SRAM blocks that are clocked on
either edge (rising or falling). For dual-port SRAM, each port can be clocked on either edge and by
separate clocks by port. Note that for Automotive ProASIC3, the same clock, with an inversion between
the two clock pins of the macro, should be used in design to prevent errors during compile.
Low power flash devices support inversion (bubble-pushing) throughout the FPGA architecture, including
the clock input to the SRAM modules. Inversions added to the SRAM clock pin on the design schematic
or in the HDL code will be automatically accounted for during design compile without incurring additional
delay in the clock path.
The two-port SRAM can be clocked on the rising or falling edge of WCLK and RCLK.
If negative-edge RAM and FIFO clocking is selected for memory macros, clock edge inversion
management (bubble-pushing) is automatically used within the development tools, without performance
penalty.
Modes of Operation
There are two read modes and one write mode:
• Read Nonpipelined (synchronous—1 clock edge): In the standard read mode, new data is driven
onto the RD bus in the same clock cycle following RA and REN valid. The read address is
registered on the read port clock active edge, and data appears at RD after the RAM access time.
Setting PIPE to OFF enables this mode.
• Read Pipelined (synchronous—2 clock edges): The pipelined mode incurs an additional clock
delay from address to data but enables operation at a much higher frequency. The read address
is registered on the read port active clock edge, and the read data is registered and appears at
RD after the second read clock edge. Setting PIPE to ON enables this mode.
• Write (synchronous—1 clock edge): On the write clock active edge, the write data is written into
the SRAM at the write address when WEN is HIGH. The setup times of the write address, write
enables, and write data are minimal with respect to the write clock.
RAM Initialization
Each SRAM block can be individually initialized on power-up by means of the JTAG port using the UJTAG
mechanism. The shift register for a target block can be selected and loaded with the proper bit
configuration to enable serial loading. The 4,608 bits of data can be loaded in a single operation.

FIFO Features
The FIFO4KX18 macro is created by merging the RAM block with dedicated FIFO logic (Figure 6-6 on
page 142). Since the FIFO logic can only be used in conjunction with the memory block, there is no
separate FIFO controller macro. As with the RAM blocks, the FIFO4KX18 nomenclature does not refer to
a possible aspect ratio, but rather to the deepest possible data depth and the widest possible data width.
FIFO4KX18 can be configured into the following aspect ratios: 4,096×1, 2,048×2, 1,024×4, 512×9, and
256×18. In addition to being fully synchronous, the FIFO4KX18 also has the following features:
• Four FIFO flags: Empty, Full, Almost-Empty, and Almost-Full
• Empty flag is synchronized to the read clock
• Full flag is synchronized to the write clock
• Both Almost-Empty and Almost-Full flags have programmable thresholds
• Active-low asynchronous reset
• Active-low block enable
• Active-low write enable
• Active-high read enable
• Ability to configure the FIFO to either stop counting after the empty or full states are reached or to
allow the FIFO counters to continue

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• Designer software will automatically facilitate falling-edge clocks by bubble-pushing the inversion
to previous stages.

Write Data Read Data

WD RD
Full Flag Empty Flag
FULL EMPTY
Almost-Full Flag Almost-Empty Flag
AFULL AEMPTY
Write Enable FIFO4KX18 Read Enable
WEN REN

Write Clock Read Clock

WCLK RCLK

Reset

Figure 6-6 • FIFO4KX18 Block Diagram

RD[17:0] RD
WD WD[17:0]
RCLK RCLK
WCLK WCLK
RAM
RADD[J:0]
WADD[J:0]

WW[2:0]
REN

RW[2:0]
RPIPE
FREN WEN
FWEN

RBLK CNT 12
REN E
= FULL
ESTOP AFVAL
AFULL

AEMPTY
AEVAL
WBLK CNT 12 SUB 12
WEN E
= EMPTY
FSTOP

Reset

Figure 6-7 • RAM Block with Embedded FIFO Controller

The FIFOs maintain a separate read and write address. Whenever the difference between the write
address and the read address is greater than or equal to the almost-full value (AFVAL), the Almost-Full
flag is asserted. Similarly, the Almost-Empty flag is asserted whenever the difference between the write
address and read address is less than or equal to the almost-empty value (AEVAL).
Due to synchronization between the read and write clocks, the Empty flag will deassert after the second
read clock edge from the point that the write enable asserts. However, since the Empty flag is
synchronized to the read clock, it will assert after the read clock reads the last data in the FIFO. Also,
since the Full flag is dependent on the actual hardware configuration, it will assert when the actual
physical implementation of the FIFO is full.
For example, when a user configures a 128×18 FIFO, the actual physical implementation will be a
256×18 FIFO element. Since the actual implementation is 256×18, the Full flag will not trigger until the

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256×18 FIFO is full, even though a 128×18 FIFO was requested. For this example, the Almost-Full flag
can be used instead of the Full flag to signal when the 128th data word is reached.
To accommodate different aspect ratios, the almost-full and almost-empty values are expressed in terms
of data bits instead of data words. SmartGen translates the user’s input, expressed in data words, into
data bits internally. SmartGen allows the user to select the thresholds for the Almost-Empty and Almost-
Full flags in terms of either the read data words or the write data words, and makes the appropriate
conversions for each flag.
After the empty or full states are reached, the FIFO can be configured so the FIFO counters either stop or
continue counting. For timing numbers, refer to the appropriate family datasheet.

Signal Descriptions for FIFO4K18

The following signals are used to configure the FIFO4K18 memory element:
WW and RW
These signals enable the FIFO to be configured in one of the five allowable aspect ratios (Table 6-6).
Table 6-6 • Aspect Ratio Settings for WW[2:0]
WW[2:0] RW[2:0] D×W
000 000 4k×1
001 001 2k×2
010 010 1k×4
011 011 512×9
100 100 256×18
101, 110, 111 101, 110, 111 Reserved

WBLK and RBLK

These signals are active-low and will enable the respective ports when LOW. When the RBLK signal is
HIGH, that port’s outputs hold the previous value.
WEN and REN
Read and write enables. WEN is active-low and REN is active-high by default. These signals can be
configured as active-high or -low.
WCLK and RCLK
These are the clock signals for the synchronous read and write operations. These can be driven
independently or with the same driver.
Note: For the Automotive ProASIC3 FIFO4K18, for the same clock, 180° out of phase (inverted)
between clock pins should be used.
RPIPE
This signal is used to specify pipelined read on the output. A LOW on RPIPE indicates a nonpipelined
read, and the data appears on the output in the same clock cycle. A HIGH indicates a pipelined read, and
data appears on the output in the next clock cycle.
RESET
This active-low signal resets the control logic and forces the output hold state registers to zero when
asserted. It does not reset the contents of the memory array (Table 6-7 on page 144).
While the RESET signal is active, read and write operations are disabled. As with any asynchronous
RESET signal, care must be taken not to assert it too close to the edges of active read and write clocks.
WD
This is the input data bus and is 18 bits wide. Not all 18 bits are valid in all configurations. When a data
width less than 18 is specified, unused higher-order signals must be grounded (Table 6-7 on page 144).

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RD
This is the output data bus and is 18 bits wide. Not all 18 bits are valid in all configurations. Like the WD
bus, high-order bits become unusable if the data width is less than 18. The output data on unused pins is
undefined (Table 6-7).
Table 6-7 • Input Data Signal Usage for Different Aspect Ratios
D×W WD/RD Unused
4k×1 WD[17:1], RD[17:1]
2k×2 WD[17:2], RD[17:2]
1k×4 WD[17:4], RD[17:4]
512×9 WD[17:9], RD[17:9]
256×18 –

ESTOP, FSTOP
ESTOP is used to stop the FIFO read counter from further counting once the FIFO is empty (i.e., the
EMPTY flag goes HIGH). A HIGH on this signal inhibits the counting.
FSTOP is used to stop the FIFO write counter from further counting once the FIFO is full (i.e., the FULL
flag goes HIGH). A HIGH on this signal inhibits the counting.
For more information on these signals, refer to the "ESTOP and FSTOP Usage" section.
FULL, EMPTY
When the FIFO is full and no more data can be written, the FULL flag asserts HIGH. The FULL flag is
synchronous to WCLK to inhibit writing immediately upon detection of a full condition and to prevent
overflows. Since the write address is compared to a resynchronized (and thus time-delayed) version of
the read address, the FULL flag will remain asserted until two WCLK active edges after a read operation
eliminates the full condition.
When the FIFO is empty and no more data can be read, the EMPTY flag asserts HIGH. The EMPTY flag
is synchronous to RCLK to inhibit reading immediately upon detection of an empty condition and to
prevent underflows. Since the read address is compared to a resynchronized (and thus time-delayed)
version of the write address, the EMPTY flag will remain asserted until two RCLK active edges after a
write operation removes the empty condition.
For more information on these signals, refer to the "FIFO Flag Usage Considerations" section on
page 145.
AFULL, AEMPTY
These are programmable flags and will be asserted on the threshold specified by AFVAL and AEVAL,
respectively.
When the number of words stored in the FIFO reaches the amount specified by AEVAL while reading,
the AEMPTY output will go HIGH. Likewise, when the number of words stored in the FIFO reaches the
amount specified by AFVAL while writing, the AFULL output will go HIGH.
AFVAL, AEVAL
The AEVAL and AFVAL pins are used to specify the almost-empty and almost-full threshold values. They
are 12-bit signals. For more information on these signals, refer to the "FIFO Flag Usage Considerations"
section on page 145.

FIFO Usage
ESTOP and FSTOP Usage
The ESTOP pin is used to stop the read counter from counting any further once the FIFO is empty (i.e.,
the EMPTY flag goes HIGH). Likewise, the FSTOP pin is used to stop the write counter from counting
any further once the FIFO is full (i.e., the FULL flag goes HIGH).
The FIFO counters in the device start the count at zero, reach the maximum depth for the configuration
(e.g., 511 for a 512×9 configuration), and then restart at zero. An example application for ESTOP, where
the read counter keeps counting, would be writing to the FIFO once and reading the same content over
and over without doing another write.

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FIFO Flag Usage Considerations

The AEVAL and AFVAL pins are used to specify the 12-bit AEMPTY and AFULL threshold values. The
FIFO contains separate 12-bit write address (WADDR) and read address (RADDR) counters. WADDR is
incremented every time a write operation is performed, and RADDR is incremented every time a read
operation is performed. Whenever the difference between WADDR and RADDR is greater than or equal
to AFVAL, the AFULL output is asserted. Likewise, whenever the difference between WADDR and
RADDR is less than or equal to AEVAL, the AEMPTY output is asserted. To handle different read and
write aspect ratios, AFVAL and AEVAL are expressed in terms of total data bits instead of total data
words. When users specify AFVAL and AEVAL in terms of read or write words, the SmartGen tool
translates them into bit addresses and configures these signals automatically. SmartGen configures the
AFULL flag to assert when the write address exceeds the read address by at least a predefined value. In
a 2k×8 FIFO, for example, a value of 1,500 for AFVAL means that the AFULL flag will be asserted after a
write when the difference between the write address and the read address reaches 1,500 (there have
been at least 1,500 more writes than reads). It will stay asserted until the difference between the write
and read addresses drops below 1,500.
The AEMPTY flag is asserted when the difference between the write address and the read address is
less than a predefined value. In the example above, a value of 200 for AEVAL means that the AEMPTY
flag will be asserted when a read causes the difference between the write address and the read address
to drop to 200. It will stay asserted until that difference rises above 200. Note that the FIFO can be
configured with different read and write widths; in this case, the AFVAL setting is based on the number of
write data entries, and the AEVAL setting is based on the number of read data entries. For aspect ratios
of 512×9 and 256×18, only 4,096 bits can be addressed by the 12 bits of AFVAL and AEVAL. The
number of words must be multiplied by 8 and 16 instead of 9 and 18. The SmartGen tool automatically
uses the proper values. To avoid halfwords being written or read, which could happen if different read
and write aspect ratios were specified, the FIFO will assert FULL or EMPTY as soon as at least one word
cannot be written or read. For example, if a two-bit word is written and a four-bit word is being read, the
FIFO will remain in the empty state when the first word is written. This occurs even if the FIFO is not
completely empty, because in this case, a complete word cannot be read. The same is applicable in the
full state. If a four-bit word is written and a two-bit word is read, the FIFO is full and one word is read. The
FULL flag will remain asserted because a complete word cannot be written at this point.

Variable Aspect Ratio and Cascading

Variable aspect ratio and cascading allow users to configure the memory in the width and depth required.
The memory block can be configured as a FIFO by combining the basic memory block with dedicated
FIFO controller logic. The FIFO macro is named FIFO4KX18. Low power flash device RAM can be
configured as 1, 2, 4, 9, or 18 bits wide. By cascading the memory blocks, any multiple of those widths
can be created. The RAM blocks can be from 256 to 4,096 bits deep, depending on the aspect ratio, and
the blocks can also be cascaded to create deeper areas. Refer to the aspect ratios available for each
macro cell in the "SRAM Features" section on page 137. The largest continuous configurable memory
area is equal to half the total memory available on the device, because the RAM is separated into two
groups, one on each side of the device.
The SmartGen core generator will automatically configure and cascade both RAM and FIFO blocks.
Cascading is accomplished using dedicated memory logic and does not consume user gates for depths
up to 4,096 bits deep and widths up to 18, depending on the configuration. Deeper memory will utilize
some user gates to multiplex the outputs.
Generated RAM and FIFO macros can be created as either structural VHDL or Verilog for easy
instantiation into the design. Users of Libero SoC can create a symbol for the macro and incorporate it
into a design schematic.
Table 6-10 on page 147 shows the number of memory blocks required for each of the supported depth
and width memory configurations, and for each depth and width combination. For example, a 256-bit
deep by 32-bit wide two-port RAM would consist of two 256×18 RAM blocks. The first 18 bits would be
stored in the first RAM block, and the remaining 14 bits would be implemented in the other 256×18 RAM
block. This second RAM block would have four bits of unused storage. Similarly, a dual-port memory
block that is 8,192 bits deep and 8 bits wide would be implemented using 16 memory blocks. The dual-
port memory would be configured in a 4,096×1 aspect ratio. These blocks would then be cascaded two
deep to achieve 8,192 bits of depth, and eight wide to achieve the eight bits of width.

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Table 6-8 and Table 6-9 show the maximum potential width and depth configuration for each device. Note
that 15 k and 30 k gate devices do not support RAM or FIFO.

Table 6-8 • Memory Availability per IGLOO and ProASIC3 Device

Device Maximum Potential Width1 Maximum Potential Depth2
IGLOO ProASIC3 RAM
IGLOO nano ProASIC3 nano Block
IGLOO PLUS ProASIC3L s Depth Width Depth Width
AGL060 A3P060 4 256 72 (4×18) 16,384 (4,096×4) 1
AGLN060 A3PN060
AGLP060
AGL125 A3P125 8 256 144 (8×18) 32,768 (4,094×8) 1
AGLN125 A3PN125
AGLP125
AGL250 A3P250/L 8 256 144 (8×18) 32,768 (4,096×8) 1
AGLN250 A3PN250
AGL400 A3P400 12 256 216 (12×18) 49,152 (4,096×12) 1
AGL600 A3P600/L 24 256 432 (24×18) 98,304 (4,096×24) 1
AGL1000 A3P1000/L 32 256 576 (32×18) 131,072 (4,096×32) 1
AGLE600 A3PE600 24 256 432 (24×18) 98,304 (4,096×24) 1
A3PE1500 60 256 1,080 (60×18) 245,760 (4,096×60) 1
AGLE3000 A3PE3000/L 112 256 2,016 (112×18) 458,752 (4,096×112) 1
Notes:
1. Maximum potential width uses the two-port configuration.
2. Maximum potential depth uses the dual-port configuration.

Table 6-9 • Memory Availability per Fusion Device

Maximum Potential Width1 Maximum Potential Depth2
Device RAM Blocks Depth Width Depth Width
AFS090 6 256 108 (6×18) 24,576 (4,094×6) 1
AFS250 8 256 144 (8×18) 32,768 (4,094×8) 1
AFS600 24 256 432 (24×18) 98,304 (4,096×24) 1
AFS1500 60 256 1,080 (60×18) 245,760 (4,096×60) 1
Notes:
1. Maximum potential width uses the two-port configuration.
2. Maximum potential depth uses the dual-port configuration.

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Table 6-10 • RAM and FIFO Memory Block Consumption

Depth
256 512 1,024 2,048 4,096 8,192 16,384 32,768 65,536
Two-Port Dual-Port Dual-Port Dual-Port Dual-Port Dual-Port Dual-Port Dual-Port Dual-Port Dual-Port
1 Number Block 1 1 1 1 1 1 2 4 8 16 × 1
Configuration Any Any Any 1,024 × 4 2,048 × 2 4,096 × 1 2 × (4,096 × 1) 4 × (4,096 × 1) 8 × (4,096 × 1) 16 × (4,096 × 1)
Cascade Deep Cascade Deep Cascade Deep Cascade Deep
2 Number Block 1 1 1 1 1 2 4 8 16 32
Configuration Any Any Any 1,024×4 2,048 × 2 2 × (4,096 × 1) 4 × (4,096 × 1) 8 × (4,096 × 1) 16 × (4,096 × 1) 32 × (4,096 × 1)
Cascaded Wide Cascaded 2 Deep Cascaded 4 Deep Cascaded 8 Deep Cascaded 16
and 2 Wide and 2 Wide and 2 Wide Deep and 2 Wide
4 Number Block 1 1 1 1 2 4 8 16 32 64
Configuration Any Any Any 1,024 × 4 2 × (2,048 × 2) 4 × (4,096 × 1) 4 × (4,096 × 1) 16 × (4,096 × 1) 32 × (4,096 × 1) 64 × (4,096 × 1)
Cascaded Wide Cascaded Wide Cascaded 2 Deep Cascaded 4 Deep Cascaded 8 Deep Cascaded 16
and 4 Wide and 4 Wide and 4 Wide Deep and 4 Wide
8 Number Block 1 1 1 2 4 8 16 32 64
Configuration Any Any Any 2 × (1,024 × 4) 4 × (2,048 × 2) 8 × (4,096 × 1) 16 × (4,096 × 1) 32 × (4,096 × 1) 64 × (4,096 × 1)
Cascaded Wide Cascaded Wide Cascaded Wide Cascaded 2 Deep Cascaded 4 Deep Cascaded 8 Deep
and 8 Wide and 8 Wide and 8 Wide
9 Number Block 1 1 1 2 4 8 16 32
Configuration Any Any Any 2 × (512 × 9) 4 × (512 × 9) 8 × (512 × 9) 16 × (512 × 9) 32 × (512 × 9)
Cascaded Deep Cascaded Deep Cascaded Deep Cascaded Deep Cascaded Deep
16 Number Block 1 1 1 4 8 16 32 64
Configuration 256 × 18 256 × 18 256 × 18 4 × (1,024 × 4) 8 × (2,048 × 2) 16 × (4,096 × 1) 32 × (4,096 × 1) 32 × (4,096 × 1)
Width

Cascaded Wide Cascaded Wide Cascaded Wide Cascaded 2 Deep Cascaded 4 Deep
and 16 Wide and 16 Wide
18 Number Block 1 2 2 4 8 18 32
Configuration 256 × 8 2 × (512 × 9) 2 × (512 × 9) 4 × (512 × 9) 8 × (512 × 9) 16 × (512 × 9) 16 × (512 × 9)
Cascaded Wide Cascaded Wide Cascaded 2 Deep Cascaded 4 Deep Cascaded 8 Deep Cascaded 16
and 2 Wide and 2 Wide and 2 Wide Deep and 2 Wide
32 Number Block 2 4 4 8 16 32 64
Configuration 2 × (256 × 18) 4 × (512 × 9) 4 × (512 × 9) 8 × (1,024 × 4) 16 × (2,048 × 2) 32 × (4,096 × 1) 64 × (4,096 × 1)
Cascaded Wide Cascaded Wide Cascaded Wide Cascaded Wide Cascaded Wide Cascaded Wide Cascaded 2 Deep
and 32 Wide
36 Number Block 2 4 4 8 16 32
Configuration 2 × (256 × 18) 4 × (512 × 9) 4 × (512 × 9) 4 × (512 × 9) 16 × (512 × 9) 16 × (512 × 9)
Cascaded Wide Cascaded Wide Cascaded Wide Cascaded 2 Deep Cascaded 4 Deep Cascaded 8 Deep
and 4 Wide and 4 Wide and 4 Wide
64 Number Block 4 8 8 16 32 64
Configuration 4 × (256 × 18) 8 × (512 × 9) 8 × (512 × 9) 16 × (1,024 × 4) 32 × (2,048 × 2) 64 × (4,096 × 1)
Cascaded Wide Cascaded Wide Cascaded Wide Cascaded Wide Cascaded Wide Cascaded Wide
72 Number Block 4 8 8 16 32
Configuration 4 × (256 × 18) 8 × (512 × 9) 8 × (512 × 9) 16 × (512 × 9) 16 × (512 × 9)
Cascaded Wide Cascaded Wide Cascaded Wide Cascaded Wide Cascaded 4 Deep
and 8 Wide
Note: Memory configurations represented by grayed cells are not supported.

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Initializing the RAM/FIFO

The SRAM blocks can be initialized with data to use as a lookup table (LUT). Data initialization can be
accomplished either by loading the data through the design logic or through the UJTAG interface. The
UJTAG macro is used to allow access from the JTAG port to the internal logic in the device. By sending
the appropriate initialization string to the JTAG Test Access Port (TAP) Controller, the designer can put
the JTAG circuitry into a mode that allows the user to shift data into the array logic through the JTAG port
using the UJTAG macro. For a more detailed explanation of the UJTAG macro, refer to the "FlashROM in
Microsemi’s Low Power Flash Devices" section on page 117.
A user interface is required to receive the user command, initialization data, and clock from the UJTAG
macro. The interface must synchronize and load the data into the correct RAM block of the design. The
main outputs of the user interface block are the following:
• Memory block chip select: Selects a memory block for initialization. The chip selects signals for
each memory block that can be generated from different user-defined pockets or simple logic,
such as a ring counter (see below).
• Memory block write address: Identifies the address of the memory cell that needs to be initialized.
• Memory block write data: The interface block receives the data serially from the UTDI port of the
UJTAG macro and loads it in parallel into the write data ports of the memory blocks.
• Memory block write clock: Drives the WCLK of the memory block and synchronizes the write
data, write address, and chip select signals.
Figure 6-8 shows the user interface between UJTAG and the memory blocks.

RAM1
WD
WADDR
WCLK
UJTAG User Interface
WEN
TRST UIREG[7:0] IR[7:0]
WDATA RAM2
TRST URSTB Reset
TDO WADDR WD
TDO UDRUPD DR_UPDATE
WCLK WADDR
TDI TDI UDRSH DR_SHIFT
WEN1 WCLK
TMS UDRCAP DR_CAPTURE
UDRCK DR_CLK WEN2 WEN
TMS TCK
UTDI DIN WEN3
TCK RAM3
UTDO DOUT
WD
WADDR
WCLK
WEN

Figure 6-8 • Interfacing TAP Ports and SRAM Blocks

An important component of the interface between the UJTAG macro and the RAM blocks is a serial-
in/parallel-out shift register. The width of the shift register should equal the data width of the RAM blocks.
The RAM data arrives serially from the UTDI output of the UJTAG macro. The data must be shifted into a
shift register clocked by the JTAG clock (provided at the UDRCK output of the UJTAG macro).
Then, after the shift register is fully loaded, the data must be transferred to the write data port of the RAM
block. To synchronize the loading of the write data with the write address and write clock, the output of
the shift register can be pipelined before driving the RAM block.
The write address can be generated in different ways. It can be imported through the TAP using a
different instruction opcode and another shift register, or generated internally using a simple counter.
Using a counter to generate the address bits and sweep through the address range of the RAM blocks is

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recommended, since it reduces the complexity of the user interface block and the board-level JTAG
driver.
Moreover, using an internal counter for address generation speeds up the initialization procedure, since
the user only needs to import the data through the JTAG port.
The designer may use different methods to select among the multiple RAM blocks. Using counters along
with demultiplexers is one approach to set the write enable signals. Basically, the number of RAM blocks
needing initialization determines the most efficient approach. For example, if all the blocks are initialized
with the same data, one enable signal is enough to activate the write procedure for all of them at the
same time. Another alternative is to use different opcodes to initialize each memory block. For a small
number of RAM blocks, using counters is an optimal choice. For example, a ring counter can be used to
select from multiple RAM blocks. The clock driver of this counter needs to be controlled by the address
generation process.
Once the addressing of one block is finished, a clock pulse is sent to the (ring) counter to select the next
memory block.
Figure 6-9 illustrates a simple block diagram of an interface block between UJTAG and RAM blocks.

Serial-to-Port Shift Register

UTDI n Data Reg. n
SIN WDATA
POUT D Q
UDRSH
Enable
UDRCK SOUT
CLK
UTDO CLK

UDRUPDI WCLK

UIREG
In Compare Result
with
Defined Opcode
Chip Select WEN1
URSTB En Ring WEN2
Reset Counter
CLK WENi
m
Addr Counter m WADDR
En Q
Binary
Reset
CLK Counter

Figure 6-9 • Block Diagram of a Sample User Interface

In the circuit shown in Figure 6-9, the shift register is enabled by the UDRSH output of the UJTAG macro.
The counters and chip select outputs are controlled by the value of the TAP Instruction Register. The
comparison block compares the UIREG value with the "start initialization" opcode value (defined by the
user). If the result is true, the counters start to generate addresses and activate the WEN inputs of
appropriate RAM blocks.
The UDRUPD output of the UJTAG macro, also shown in Figure 6-9, is used for generating the write
clock (WCLK) and synchronizing the data register and address counter with WCLK. UDRUPD is HIGH
when the TAP Controller is in the Data Register Update state, which is an indication of completing the
loading of one data word. Once the TAP Controller goes into the Data Register Update state, the
UDRUPD output of the UJTAG macro goes HIGH. Therefore, the pipeline register and the address
counter place the proper data and address on the outputs of the interface block. Meanwhile, WCLK is
defined as the inverted UDRUPD. This will provide enough time (equal to the UDRUPD HIGH time) for
the data and address to be placed at the proper ports of the RAM block before the rising edge of WCLK.
The inverter is not required if the RAM blocks are clocked at the falling edge of the write clock. An
example of this is described in the "Example of RAM Initialization" section on page 150.

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Example of RAM Initialization

This section of the document presents a sample design in which a 4×4 RAM block is being initialized
through the JTAG port. A test feature has been implemented in the design to read back the contents of
the RAM after initialization to verify the procedure.
The interface block of this example performs two major functions: initialization of the RAM block and
running a test procedure to read back the contents. The clock output of the interface is either the write
clock (for initialization) or the read clock (for reading back the contents). The Verilog code for the
interface block is included in the "Sample Verilog Code" section on page 151.
For simulation purposes, users can declare the input ports of the UJTAG macro for easier assignment in
the testbench. However, the UJTAG input ports should not be declared on the top level during synthesis.
If the input ports of the UJTAG are declared during synthesis, the synthesis tool will instantiate input
buffers on these ports. The input buffers on the ports will cause Compile to fail in Designer.
Figure 6-10 shows the simulation results for the initialization step of the example design.
The CLK_OUT signal, which is the clock output of the interface block, is the inverted DR_UPDATE output
of the UJTAG macro. It is clear that it gives sufficient time (while the TAP Controller is in the Data
Register Update state) for the write address and data to become stable before loading them into the RAM
block.
Figure 6-11 presents the test procedure of the example. The data read back from the memory block
matches the written data, thus verifying the design functionality.

Figure 6-10 • Simulation of Initialization Step

Figure 6-11 • Simulation of the Test Procedure of the Example

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The ROM emulation application is based on RAM block initialization. If the user's main design has
access only to the read ports of the RAM block (RADDR, RD, RCLK, and REN), and the contents of the
RAM are already initialized through the TAP, then the memory blocks will emulate ROM functionality for
the core design. In this case, the write ports of the RAM blocks are accessed only by the user interface
block, and the interface is activated only by the TAP Instruction Register contents.
Users should note that the contents of the RAM blocks are lost in the absence of applied power.
However, the 1 kbit of flash memory, FlashROM, in low power flash devices can be used to retain data
after power is removed from the device. Refer to the "SRAM and FIFO Memories in Microsemi's Low
Power Flash Devices" section on page 131 for more information.

Sample Verilog Code

Interface Block
`define Initialize_start 8'h22 //INITIALIZATION START COMMAND VALUE
`define Initialize_stop 8'h23 //INITIALIZATION START COMMAND VALUE

module interface(IR, rst_n, data_shift, clk_in, data_update, din_ser, dout_ser, test,

test_out,test_clk,clk_out,wr_en,rd_en,write_word,read_word,rd_addr, wr_addr);

input [7:0] IR;

input [3:0] read_word; //RAM DATA READ BACK
input rst_n, data_shift, clk_in, data_update, din_ser; //INITIALIZATION SIGNALS
input test, test_clk; //TEST PROCEDURE CLOCK AND COMMAND INPUT
output [3:0] test_out; //READ DATA
output [3:0] write_word; //WRITE DATA
output [1:0] rd_addr; //READ ADDRESS
output [1:0] wr_addr; //WRITE ADDRESS
output dout_ser; //TDO DRIVER
output clk_out, wr_en, rd_en;

wire [3:0] write_word;

wire [1:0] rd_addr;
wire [1:0] wr_addr;
wire [3:0] Q_out;
wire enable, test_active;

reg clk_out;

//SELECT CLOCK FOR INITIALIZATION OR READBACK TEST

always @(enable or test_clk or data_update)
begin
case ({test_active})
1 : clk_out = test_clk ;
0 : clk_out = !data_update;
default : clk_out = 1'b1;
endcase
end

assign test_active = test && (IR == 8'h23);

assign enable = (IR == 8'h22);
assign wr_en = !enable;
assign rd_en = !test_active;
assign test_out = read_word;
assign dout_ser = Q_out[3];

//4-bit SIN/POUT SHIFT REGISTER

shift_reg data_shift_reg (.Shiften(data_shift), .Shiftin(din_ser), .Clock(clk_in),
.Q(Q_out));

//4-bit PIPELINE REGISTER

D_pipeline pipeline_reg (.Data(Q_out), .Clock(data_update), .Q(write_word));

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//
addr_counter counter_1 (.Clock(data_update), .Q(wr_addr), .Aset(rst_n),
.Enable(enable));
addr_counter counter_2 (.Clock(test_clk), .Q(rd_addr), .Aset(rst_n),
.Enable( test_active));

endmodule

Interface Block / UJTAG Wrapper

This example is a sample wrapper, which connects the interface block to the UJTAG and the memory
blocks.
// WRAPPER
module top_init (TDI, TRSTB, TMS, TCK, TDO, test, test_clk, test_ out);

input TDI, TRSTB, TMS, TCK;

output TDO;
input test, test_clk;
output [3:0] test_out;

wire [7:0] IR;

wire reset, DR_shift, DR_cap, init_clk, DR_update, data_in, data_out;
wire clk_out, wen, ren;
wire [3:0] word_in, word_out;
wire [1:0] write_addr, read_addr;

UJTAG UJTAG_U1 (.UIREG0(IR[0]), .UIREG1(IR[1]), .UIREG2(IR[2]), .UIREG3(IR[3]),

.UIREG4(IR[4]), .UIREG5(IR[5]), .UIREG6(IR[6]), .UIREG7(IR[7]), .URSTB(reset),
.UDRSH(DR_shift), .UDRCAP(DR_cap), .UDRCK(init_clk), .UDRUPD(DR_update),
.UT-DI(data_in), .TDI(TDI), .TMS(TMS), .TCK(TCK), .TRSTB(TRSTB), .TDO(TDO),
.UT-DO(data_out));
mem_block RAM_block (.DO(word_out), .RCLOCK(clk_out), .WCLOCK(clk_out), .DI(word_in),
.WRB(wen), .RDB(ren), .WAD-DR(write_addr), .RADDR(read_addr));
interface init_block (.IR(IR), .rst_n(reset), .data_shift(DR_shift), .clk_in(init_clk),
.data_update(DR_update), .din_ser(data_in), .dout_ser(data_out), .test(test),
.test_out(test_out), .test_clk(test_clk), .clk_out(clk_out), .wr_en(wen),
.rd_en(ren), .write_word(word_in), .read_word(word_out), .rd_addr(read_addr),
.wr_addr(write_addr));

endmodule

Address Counter
module addr_counter (Clock, Q, Aset, Enable);

input Clock;
output [1:0] Q;
input Aset;
input Enable;

reg [1:0] Qaux;

always @(posedge Clock or negedge Aset)

begin
if (!Aset) Qaux <= 2'b11;
else if (Enable) Qaux <= Qaux + 1;
end

assign Q = Qaux;

endmodule

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Pipeline Register
module D_pipeline (Data, Clock, Q);

input [3:0] Data;

input Clock;
output [3:0] Q;

reg [3:0] Q;

always @ (posedge Clock) Q <= Data;

endmodule

4x4 RAM Block (created by SmartGen Core Generator)

module mem_block(DI,DO,WADDR,RADDR,WRB,RDB,WCLOCK,RCLOCK);

input [3:0] DI;

output [3:0] DO;
input [1:0] WADDR, RADDR;
input WRB, RDB, WCLOCK, RCLOCK;

wire WEBP, WEAP, VCC, GND;

VCC VCC_1_net(.Y(VCC));
GND GND_1_net(.Y(GND));
INV WEBUBBLEB(.A(WRB), .Y(WEBP));
RAM4K9 RAMBLOCK0(.ADDRA11(GND), .ADDRA10(GND), .ADDRA9(GND), .ADDRA8(GND),
.ADDRA7(GND), .ADDRA6(GND), .ADDRA5(GND), .ADDRA4(GND), .ADDRA3(GND), .ADDRA2(GND),
.ADDRA1(RADDR[1]), .ADDRA0(RADDR[0]), .ADDRB11(GND), .ADDRB10(GND), .ADDRB9(GND),
.ADDRB8(GND), .ADDRB7(GND), .ADDRB6(GND), .ADDRB5(GND), .ADDRB4(GND), .ADDRB3(GND),
.ADDRB2(GND), .ADDRB1(WADDR[1]), .ADDRB0(WADDR[0]), .DINA8(GND), .DINA7(GND),
.DINA6(GND), .DINA5(GND), .DINA4(GND), .DINA3(GND), .DINA2(GND), .DINA1(GND),
.DINA0(GND), .DINB8(GND), .DINB7(GND), .DINB6(GND), .DINB5(GND), .DINB4(GND),
.DINB3(DI[3]), .DINB2(DI[2]), .DINB1(DI[1]), .DINB0(DI[0]), .WIDTHA0(GND),
.WIDTHA1(VCC), .WIDTHB0(GND), .WIDTHB1(VCC), .PIPEA(GND), .PIPEB(GND),
.WMODEA(GND), .WMODEB(GND), .BLKA(WEAP), .BLKB(WEBP), .WENA(VCC), .WENB(GND),
.CLKA(RCLOCK), .CLKB(WCLOCK), .RESET(VCC), .DOUTA8(), .DOUTA7(), .DOUTA6(),
.DOUTA5(), .DOUTA4(), .DOUTA3(DO[3]), .DOUTA2(DO[2]), .DOUTA1(DO[1]),
.DOUTA0(DO[0]), .DOUTB8(), .DOUTB7(), .DOUTB6(), .DOUTB5(), .DOUTB4(), .DOUTB3(),
.DOUTB2(), .DOUTB1(), .DOUTB0());
INV WEBUBBLEA(.A(RDB), .Y(WEAP));

endmodule

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SRAM and FIFO Memories in Microsemi's Low Power Flash Devices

Software Support
The SmartGen core generator is the easiest way to select and configure the memory blocks
(Figure 6-12). SmartGen automatically selects the proper memory block type and aspect ratio, and
cascades the memory blocks based on the user's selection. SmartGen also configures any additional
signals that may require tie-off.
SmartGen will attempt to use the minimum number of blocks required to implement the desired memory.
When cascading, SmartGen will configure the memory for width before configuring for depth. For
example, if the user requests a 256×8 FIFO, SmartGen will use a 512×9 FIFO configuration, not 256×18.

Figure 6-12 • SmartGen Core Generator Interface

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SmartGen enables the user to configure the desired RAM element to use either a single clock for read
and write, or two independent clocks for read and write. The user can select the type of RAM as well as
the width/depth and several other parameters (Figure 6-13).

Figure 6-13 • SmartGen Memory Configuration Interface

SmartGen also has a Port Mapping option that allows the user to specify the names of the ports
generated in the memory block (Figure 6-14).

Figure 6-14 • Port Mapping Interface for SmartGen-Generated Memory

SmartGen also configures the FIFO according to user specifications. Users can select no flags, static
flags, or dynamic flags. Static flag settings are configured using configuration flash and cannot be altered

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without reprogramming the device. Dynamic flag settings are determined by register values and can be
altered without reprogramming the device by reloading the register values either from the design or
through the UJTAG interface described in the "Initializing the RAM/FIFO" section on page 148.
SmartGen can also configure the FIFO to continue counting after the FIFO is full. In this configuration,
the FIFO write counter will wrap after the counter is full and continue to write data. With the FIFO
configured to continue to read after the FIFO is empty, the read counter will also wrap and re-read data
that was previously read. This mode can be used to continually read back repeating data patterns stored
in the FIFO (Figure 6-15).

Figure 6-15 • SmartGen FIFO Configuration Interface

FIFOs configured using SmartGen can also make use of the port mapping feature to configure the
names of the ports.

Limitations
Users should be aware of the following limitations when configuring SRAM blocks for low power flash
devices:
• SmartGen does not track the target device in a family, so it cannot determine if a configured
memory block will fit in the target device.
• Dual-port RAMs with different read and write aspect ratios are not supported.
• Cascaded memory blocks can only use a maximum of 64 blocks of RAM.
• The Full flag of the FIFO is sensitive to the maximum depth of the actual physical FIFO block, not
the depth requested in the SmartGen interface.

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Conclusion
Fusion, IGLOO, and ProASIC3 devices provide users with extremely flexible SRAM blocks for most
design needs, with the ability to choose between an easy-to-use dual-port memory or a wide-word two-
port memory. Used with the built-in FIFO controllers, these memory blocks also serve as highly efficient
FIFOs that do not consume user gates when implemented. The SmartGen core generator provides a fast
and easy way to configure these memory elements for use in designs.

List of Changes
The following table lists critical changes that were made in each revision of the chapter.

Date Changes Page

August 2012 The note connected with Figure 6-3 • Supported Basic RAM Macros, regarding 136
RAM4K9, was revised to explain that it applies only to part numbers of certain
revisions and earlier (SAR 29574).
July 2010 This chapter is no longer published separately with its own part number and N/A
version but is now part of several FPGA fabric user’s guides.
v1.5 IGLOO nano and ProASIC3 nano devices were added to Table 6-1 • Flash-Based 134
(December 2008) FPGAs.
IGLOO nano and ProASIC3 nano devices were added to Figure 6-8 • Interfacing 148
TAP Ports and SRAM Blocks.
v1.4 The "SRAM/FIFO Support in Flash-Based Devices" section was revised to 134
(October 2008) include new families and make the information more concise.
The "SRAM and FIFO Architecture" section was modified to remove "IGLOO and 135
ProASIC3E" from the description of what the memory block includes, as this
statement applies to all memory blocks.
Wording in the "Clocking" section was revised to change "IGLOO and ProASIC3 141
devices support inversion" to "Low power flash devices support inversion." The
reference to IGLOO and ProASIC3 development tools in the last paragraph of the
section was changed to refer to development tools in general.
The "ESTOP and FSTOP Usage" section was updated to refer to FIFO counters 144
in devices in general rather than only IGLOO and ProASIC3E devices.
v1.3 The note was removed from Figure 6-7 • RAM Block with Embedded FIFO 142
(August 2008) Controller and placed in the WCLK and RCLK description.
The "WCLK and RCLK" description was revised. 143
v1.2 The following changes were made to the family descriptions in Table 6-1 • Flash- 134
(June 2008) Based FPGAs:
• ProASIC3L was updated to include 1.5 V.
• The number of PLLs for ProASIC3E was changed from five to six.
v1.1 The "Introduction" section was updated to include the IGLOO PLUS family. 131
(March 2008)
The "Device Architecture" section was updated to state that 15 k gate devices do 131
not support SRAM and FIFO.
The first note in Figure 6-1 • IGLOO and ProASIC3 Device Architecture Overview 133
was updated to include mention of 15 k gate devices, and IGLOO PLUS was
added to the second note.

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SRAM and FIFO Memories in Microsemi's Low Power Flash Devices

Date Changes Page

v1.1 Table 6-1 • Flash-Based FPGAs and associated text were updated to include the 134
(continued) IGLOO PLUS family. The "IGLOO Terminology" section and "ProASIC3
Terminology" section are new.
The text introducing Table 6-8 • Memory Availability per IGLOO and ProASIC3 146
Device was updated to replace "A3P030 and AGL030" with "15 k and 30 k gate
devices." Table 6-8 • Memory Availability per IGLOO and ProASIC3 Device was
updated to remove AGL400 and AGLE1500 and include IGLOO PLUS and
ProASIC3L devices.

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Introduction
Low power flash devices feature a flexible I/O structure, supporting a range of mixed voltages (1.2 V,
1.5 V, 1.8 V, 2.5 V, and 3.3 V) through bank-selectable voltages. IGLOO® and ProASIC3 nano devices
support standard I/Os with the addition of Schmitt trigger and hot-swap capability.
Users designing I/O solutions are faced with a number of implementation decisions and configuration
choices that can directly impact the efficiency and effectiveness of their final design. The flexible I/O
structure, supporting a wide variety of voltages and I/O standards, enables users to meet the growing
challenges of their many diverse applications. The Microsemi Libero® System-on-Chip (SoC) software
provides an easy way to implement I/O that will result in robust I/O design.
This document describes Standard I/O types used for the nano devices in terms of he supported
standards. It then explains the individual features and how to implement them in Libero SoC.

Scan
Y
I/O / Q0 1
Input
Register
PAD

CLR
I/O / CLK Scan
Signal Drive Strength
and Slew Rate Control

I/O / D0
2 Pull-Up/-Down
Output Resistor Control
Register
Scan

CLR

I/O / OE 3
Output
Register

CLR

I/O / CLR

Figure 7-1 • I/O Block Logical Representation for Single-Tile Designs (10 k, 15 k, and 20 k devices)

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I/O Structures in nano Devices

I/O / Q0 1 2
Input Input
Register Register
To FPGA Core Y

CLR/PRE

I/O / Q1 3
Input PAD
Scan
ICE Register

CLR/PRE Signal Drive Strength

I/O / ICLK Scan and Slew Rate Control

Pull-Up/-Down
Resistor Control

A E = Enable Pin

Scan

I/O / D0 4
Output
OCE Register

From FPGA Core

CLR/PRE

I/O / D1 / ICE 5
ICE Output
Register

I/O / OCLK CLR/PRE

I/O / OE 6
Output
OCE Enable
Register

I/O / CLR or I/O / PRE / OCE

CLR/PRE

Figure 7-2 • I/O Block Logical Representation for Dual-Tile Designs (60 k,125 k, and 250 k Devices)

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Low Power Flash Device I/O Support

The low power flash families listed in Table 7-1 support I/Os and the functions described in this
document.
Table 7-1 • Flash-Based FPGAs
Series Family* Description
IGLOO IGLOO nano Lowest power 1.2 V to 1.5 V FPGAs with Flash*Freeze technology
ProASIC3 ProASIC3 nano Lowest cost 1.5 V FPGAs with balanced performance
Note: *The device name links to the appropriate datasheet, including product brief, DC and switching characteristics,
and packaging information.

IGLOO Terminology
In documentation, the terms IGLOO series and IGLOO devices refer to all of the IGLOO devices as listed
in Table 7-1. Where the information applies to only one product line or limited devices, these exclusions
will be explicitly stated.

ProASIC3 Terminology
In documentation, the terms ProASIC3 series and ProASIC3 devices refer to all of the ProASIC3 devices
as listed in Table 7-1. Where the information applies to only one product line or limited devices, these
exclusions will be explicitly stated.
To further understand the differences between the IGLOO and ProASIC3 devices, refer to the Industry’s
Lowest Power FPGAs Portfolio.

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I/O Structures in nano Devices

nano Standard I/Os

Table 7-2 and Table 7-3 show the voltages and compatible I/O standards for ProASIC3 nano and IGLOO
nano devices.
I/Os provide programmable slew rates, drive strengths, and weak pull-up and pull-down circuits.
Selectable Schmitt trigger and 5 V tolerant receivers are offered. See the "5 V Input Tolerance" section
on page 171 for possible implementations of 5 V tolerance.
All I/Os are in a known state during power-up, and any power-up sequence is allowed without current
impact. Refer to the "I/O Power-Up and Supply Voltage Thresholds for Power-On Reset (Commercial
and Industrial)" section in the datasheet for more information. During power-up, before reaching
activation levels, the I/O input and output buffers are disabled while the weak pull-up is enabled.
Activation levels are described in the datasheet.
Table 7-2 • Supported I/O Standards for IGLOO nano Devices
IGLOO nano AGLN010 AGLN015 AGLN020 AGLN060 AGLN125 AGLN250
Single-Ended
LVTTL/LVCMOS 3.3 V, ✓ ✓ ✓ ✓ ✓ ✓
LVCMOS 2.5 V / 1.8 V / 1.5 V / 1.2 V

Table 7-3 • Supported I/O Standards for ProASIC3 Devices

ProASIC3 nano A3PN010 A3PN015 A3PN020 A3PN060 A3PN125 A3PN250
Single-Ended
LVTTL/LVCMOS 3.3 V, ✓ ✓ ✓ ✓ ✓ ✓
LVCMOS 2.5 V / 1.8 V / 1.5 V

I/O Banks and I/O Standards Compatibility

I/Os are grouped into I/O voltage banks. nano devices have two, three, or four I/O banks.
Each I/O voltage bank has dedicated I/O supply and ground voltages. This isolation is necessary to
minimize simultaneous switching noise from the input and output (SSI and SSO). The switching noise
(ground bounce and power bounce) is generated by the output buffers and transferred into input buffer
circuits, and vice versa. Because of these dedicated supplies, only I/Os with compatible standards can
be assigned to the same I/O voltage bank. Table 7-4 shows the required voltage compatibility values for
each of these voltages.
There are four I/O banks on the 250 k gate device.
There are three I/O banks on the 15 k and 20 k gate devices.
There are two I/O banks on the 10 k, 60 k, and 125 k gate devices.
I/O standards are compatible if their VCCI values are identical. For more information about I/O and global
assignments to I/O banks in a device, refer to the specific pin table for the device in the packaging
section of the datasheet and the "User I/O Naming Convention" section on page 178.

Table 7-4 • VCCI Voltages and Compatible Standards

VCCI (typical) Compatible Standards
3.3 V LVTTL/LVCMOS 3.3
2.5 V LVCMOS 2.5
1.8 V LVCMOS 1.8
1.5 V LVCMOS 1.5
1.2 V LVCMOS 1.2

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Features Supported on Every I/O

Table 7-5 lists all features supported by transmitter/receiver for single-ended I/Os. Table 7-6 lists the
performance of each I/O technology.

Table 7-5 • I/O Features

Feature Description
All I/O • High performance (Table 7-6)
• Electrostatic discharge (ESD) protection
• I/O register combining option
Single-Ended Transmitter Features • Hot-swap
• I/Os can be configured to behave in Flash*Freeze mode as
tristate, HIGH, LOW, or to hold the previous state (not
supported on ProASIC3 nano devices).
• Programmable output slew rate: high and low
• Optional weak pull-up and pull-down resistors
• Output drive: 2 drive strengths (except for LVCMOS 1.2 V)
• LVTTL/LVCMOS 3.3 V outputs compatible with 5 V TTL
inputs
Single-Ended Receiver Features • Selectable Schmitt trigger
• 5 V–input–tolerant receiver (Table 7-12 on page 171)
• Separate ground plane for GNDQ pin and power plane for
VCCI pin are used for input buffer to reduce output-induced
noise.
DDR • DDR is supported for 60 k gate devices and above.

Table 7-6 • Maximum I/O Frequency

Maximum Performance
ProASIC3 nano 1.5 V IGLOO nano V2 or V5 IGLOO nano V2,
DC Core Supply Devices, 1.5 V DC Core 1.2 V DC Core
Specification Voltage Supply Voltage Supply Voltage
LVTTL/LVCMOS 3.3 V 200 MHz 180 MHz TBD
LVCMOS 2.5 V 250 MHz 230 MHz TBD
LVCMOS 1.8 V 200 MHz 180 MHz TBD
LVCMOS 1.5 V 130 MHz 120 MHz TBD
LVCMOS 1.2 V Not supported TBD TBD

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I/O Structures in nano Devices

I/O Architecture

I/O Tile
IGLOO and ProASIC3 nano devices utilize either a single-tile or dual-tile I/O architecture (Figure 7-1 on
page 159 and Figure 7-2 on page 160). The 10 k, 15 k, and 20 k devices utilize the single-tile design and
the 60 k, 125 k and 250 k devices utilize the dual-tile design. In both cases, the I/O tile provides a
flexible, programmable structure for implementing a large number of I/O standards. In addition, the
registers available in the I/O tile can be used to support high-performance register inputs and outputs,
with register enable if desired. For single-tile designs, all I/O registers share both the CLR and CLK ports,
while for the dual-tile designs, the output register and output enable register share one CLK port. For the
dual-tile designs, the registers can also be used to support the JESD-79C Double Data Rate (DDR)
standard within the I/O structure (see the "DDR for Microsemi’s Low Power Flash Devices" section on
page 205 for more information).

I/O Registers
Each I/O module contains several input and output registers. Refer to Figure 7-3 on page 165 for a
simplified representation of the I/O block. The number of input registers is selected by a set of switches
(not shown in Figure 7-2 on page 160) between registers to implement single-ended data transmission to
and from the FPGA core. The Designer software sets these switches for the user. For single-tile designs,
a common CLR/PRE signal is employed by all I/O registers when I/O register combining is used. The I/O
register combining requires that no combinatorial logic be present between the register and the I/O.

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I/O Bank Structure

Low power flash device I/Os are divided into multiple technology banks. The number of banks is device-
dependent, supporting two, three, or four banks. Each bank has its own VCCI power supply pin. Refer to
Figure 7-2 on page 160 for more information.

Output Buffer Hot-Swap and 5 V 3

Tolerance Control
VCCI VCCI

Weak
Pull-Up
Control
(from
OE
core)
(from core logic)

ESD Protection1

Drive
Output Buffer Strength
I/O PAD
Logic and
Output
Slew Rate
Control
Clamp Diode

Output Signal Weak

(from core logic) Pull-
Down
Control
(from
core)

ESD Protection1

Input Buffer Input Buffer Standard 2

and Schmitt Trigger
Control

Input Signal to Core Logic

Notes:
1. All NMOS transistors connected to the I/O pad serve as ESD protection.
2. See Table 7-2 on page 162 for available I/O standards.
3. 5 V tolerance requires external resistor.
Figure 7-3 • Simplified I/O Buffer Circuitry

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I/O Structures in nano Devices

I/O Standards

Single-Ended Standards
These I/O standards use a push-pull CMOS output stage with a voltage referenced to system ground to
designate logical states. The input buffer configuration, output drive, and I/O supply voltage (VCCI) vary
among the I/O standards (Figure 7-4).

VCCI VCCI
OUT IN
Device 1 Device 2

GND GND

Figure 7-4 • Single-Ended I/O Standard Topology

The advantage of these standards is that a common ground can be used for multiple I/Os. This simplifies
board layout and reduces system cost. Their low-edge-rate (dv/dt) data transmission causes less
electromagnetic interference (EMI) on the board. However, they are not suitable for high-frequency
(>200 MHz) switching due to noise impact and higher power consumption.

LVTTL (Low-Voltage TTL)

This is a general-purpose standard (EIA/JESD8-B) for 3.3 V applications. It uses an LVTTL input buffer
and a push-pull output buffer. The LVTTL output buffer can have up to six different programmable drive
strengths. Refer to "I/O Programmable Features" on page 167 for details. Refer to Table 7-14 on
page 176 for details.

LVCMOS (Low-Voltage CMOS)

The low power flash devices provide five voltage levels for LVCMOS: LVCMOS 3.3 V, LVCMOS 2.5 V,
LVCMOS 1.8 V, LVCMOS 1.5 V, and LVCMOS 1.2 V.
LVCMOS 3.3 V is an extension of the LVCMOS standard (JESD8-B–compliant) used for general-
purpose 3.3 V applications. LVCMOS 2.5 V is an extension of the LVCMOS standard (JESD8-5–
compliant) used for general-purpose 2.5 V applications. LVCMOS 1.8 V is an extension of the LVCMOS
standard (JESD8-7–compliant) used for general-purpose 1.8 V applications. LVCMOS 1.5 V is an
extension of the LVCMOS standard (JESD8-11–compliant) used for general-purpose 1.5 V applications.
LVCMOS 1.2V is an extension of the LVCMOS standard (JESD8-12A-compliant) used for general-
purpose 1.2 V applications.
The VCCI values for these standards are 3.3 V, 2.5 V, 1.8 V, 1.5 V, and 1.2 V, respectively. Like LVTTL,
the output buffer has up to four different programmable drive strengths (2, 4, 6, and 8 mA). Refer to
"nano Output Drive and Slew" on page 176 for details.

Wide Range I/O Support

Microsemi nano devices support JEDEC defined wide range I/O operation. ProASIC3 nano devices
support the JESD8-B specification covering both 3 V and 3.3 V supplies, for an effective operating range
of 2.7 V – 3.6 V. IGLOO nano devices support both the JESD8-B specification per the above and JESD8-
12A with 1.2 V nominal, supporting an effective operating range of 1.14 V – 1.575 V.

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I/O Features
Both IGLOO nano and ProASIC3 nano devices support multiple I/O features that make board design
easier. For example, an I/O feature like Schmitt Trigger in the input buffer saves the board space that
would be used by an external Schmitt trigger for a slow or noisy input signal. These features are also
programmable for each I/O, which in turn gives flexibility in interfacing with other components. The
following is a detailed description of all available features in nano devices.

I/O Programmable Features

Low power flash devices offer many flexible I/O features to support a wide variety of board designs.
Some of the features are programmable, with a range for selection. Table 7-7 lists programmable I/O
features and their ranges.

Table 7-7 • Programmable I/O Features (user control via I/O Attribute Editor)
Feature Description Range
Slew Control Output slew rate HIGH, LOW
Output Drive (mA) Output drive strength Depends on I/O type
Resistor Pull Weak resistor pull circuit Up, Down, None
Schmitt Trigger Schmitt trigger for input only ON, OFF

Hot-Swap Support
All nano devices are hot-swappable.
The hot-swap feature appears as a read-only check box in the I/O Attribute Editor that shows whether an
I/O is hot-swappable or not. Refer to the "Power-Up/-Down Behavior of Low Power Flash Devices"
section on page 307 for details on hot-swapping.
Hot-swapping is the operation of hot insertion or hot removal of a card in a powered-up system. The
levels of hot-swap support and examples of related applications are described in Table 7-8 on page 168
to Table 7-11 on page 169. The I/Os also need to be configured in hot-insertion mode if hot-plugging
compliance is required. nano devices have an I/O structure that allows the support of Level 3 and Level 4
hot-swap with only two levels of staging.

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I/O Structures in nano Devices

Table 7-8 • Hot-Swap Level 1

Description Cold-swap
Power Applied to Device No
Bus State –
Card Ground Connection –
Device Circuitry Connected to Bus Pins –
Example Application System and card with Microsemi FPGA chip are
powered down, and the card is plugged into the
system. Then the power supplies are turned on for
the system but not for the FPGA on the card.
Compliance of nano Devices Compliant

Table 7-9 • Hot-Swap Level 2

Description Hot-swap while reset
Power Applied to Device Yes
Bus State Held in reset state
Card Ground Connection Reset must be maintained for 1 ms before, during,
and after insertion/removal.
Device Circuitry Connected to Bus Pins –
Example Application In the PCI hot-plug specification, reset control
circuitry isolates the card busses until the card
supplies are at their nominal operating levels and
stable.
Compliance of nano Devices Compliant

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Table 7-10 • Hot-Swap Level 3

Description Hot-swap while bus idle
Power Applied to Device Yes
Bus State Held idle (no ongoing I/O processes during
insertion/removal)
Card Ground Connection Reset must be maintained for 1 ms before, during,
and after insertion/removal.
Device Circuitry Connected to Bus Pins Must remain glitch-free during power-up or power-
down
Example Application Board bus shared with card bus is "frozen," and
there is no toggling activity on the bus. It is critical
that the logic states set on the bus signal not be
disturbed during card insertion/removal.
Compliance of nano Devices Compliant

Table 7-11 • Hot-Swap Level 4

Description Hot-swap on an active bus
Power Applied to Device Yes
Bus State Bus may have active I/O processes ongoing, but
device being inserted or removed must be idle.
Card Ground Connection Reset must be maintained for 1 ms before, during,
and after insertion/removal.
Device Circuitry Connected to Bus Pins Must remain glitch-free during power-up or power-
down
Example Application There is activity on the system bus, and it is critical
that the logic states set on the bus signal not be
disturbed during card insertion/removal.
Compliance of nano Devices Compliant

For Level 3 and Level 4 compliance with the nano devices, cards with two levels of staging should have
the following sequence:
• Grounds
• Powers, I/Os, and other pins

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I/O Structures in nano Devices

Cold-Sparing Support
Cold-sparing refers to the ability of a device to leave system data undisturbed when the system is
powered up, while the component itself is powered down, or when power supplies are floating.
Cold-sparing is supported on all IGLOO nano and ProASIC3 nano devices only when the user provides
resistors from each power supply to ground. The resistor value is calculated based on the decoupling
capacitance on a given power supply. The RC constant should be greater than 3 µs.
To remove resistor current during operation, it is suggested that the resistor be disconnected (e.g., with
an NMOS switch) from the power supply after the supply has reached its final value. Refer to the "Power-
Up/-Down Behavior of Low Power Flash Devices" section on page 307 for details on cold-sparing.
Cold-sparing means that a subsystem with no power applied (usually a circuit board) is electrically
connected to the system that is in operation. This means that all input buffers of the subsystem must
present very high input impedance with no power applied so as not to disturb the operating portion of the
system.
When targeting low power applications, I/O cold-sparing may add additional current if a pin is configured
with either a pull-up or pull-down resistor and driven in the opposite direction. A small static current is
induced on each I/O pin when the pin is driven to a voltage opposite to the weak pull resistor. The current
is equal to the voltage drop across the input pin divided by the pull resistor. Refer to the "Detailed I/O DC
Characteristics" section of the appropriate family datasheet for the specific pull resistor value for the
corresponding I/O standard.
For example, assuming an LVTTL 3.3 V input pin is configured with a weak pull-up resistor, a current will
flow through the pull-up resistor if the input pin is driven LOW. For LVTTL 3.3 V, the pull-up resistor is
~45 kΩ, and the resulting current is equal to 3.3 V / 45 kΩ = 73 µA when the I/O pin is driven LOW. This
is true also when a weak pull-down is chosen and the input pin is driven HIGH. This current can be
avoided by driving the input Low when a weak pull-down resistor is used and driving it HIGH when a
weak pull-up resistor is used.
This current draw can occur in the following cases:
• In Active and Static modes:
– Input buffers with pull-up, driven Low
– Input buffers with pull-down, driven High
– Bidirectional buffers with pull-up, driven Low
– Bidirectional buffers with pull-down, driven High
– Output buffers with pull-up, driven Low
– Output buffers with pull-down, driven High
– Tristate buffers with pull-up, driven Low
– Tristate buffers with pull-down, driven High
• In Flash*Freeze mode (not supported on ProASIC3 nano devices):
– Input buffers with pull-up, driven Low
– Input buffers with pull-down, driven High
– Bidirectional buffers with pull-up, driven Low
– Bidirectional buffers with pull-down, driven High

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Electrostatic Discharge Protection

Low power flash devices are tested per JEDEC Standard JESD22-A114-B.
These devices contain clamp diodes at every I/O, global, and power pad. Clamp diodes protect all device
pads against damage from ESD as well as from excessive voltage transients.
All nano devices are qualified to the Human Body Model (HBM) and the Charged Device Model (CDM).

Table 7-12 • I/O Hot-Swap and 5 V Input Tolerance Capabilities in nano Devices
5 V Input Output
I/O Assignment Clamp Diode Hot Insertion Tolerance Input Buffer Buffer
3.3 V LVTTL/LVCMOS No Yes Yes* Enabled/Disabled
LVCMOS 2.5 V No Yes No Enabled/Disabled
LVCMOS 1.8 V No Yes No Enabled/Disabled
LVCMOS 1.5 V No Yes No Enabled/Disabled
LVCMOS 1.2 V No Yes No Enabled/Disabled
* Can be implemented with an external IDT bus switch, resistor divider, or Zener with resistor.

5 V Input and Output Tolerance

nano devices can be made 5 V–input–tolerant for certain I/O standards by using external level shifting
techniques. 5 V output compliance can be achieved using certain I/O standards.
Table 7-5 on page 163 shows the I/O standards that support 5 V input tolerance. Only 3.3 V
LVTTL/LVCMOS standards support 5 V output tolerance.

5 V Input Tolerance
I/Os can support 5 V input tolerance when LVTTL 3.3 V or LVCMOS 3.3 V configurations are used (see
Table 7-12). There are three recommended solutions for achieving 5 V receiver tolerance (see Figure 7-5
on page 172 to Figure 7-7 on page 173 for details of board and macro setups). All the solutions meet a
common requirement of limiting the voltage at the input to 3.6 V or less. In fact, the I/O absolute
maximum voltage rating is 3.6 V, and any voltage above 3.6 V may cause long-term gate oxide failures.
Solution 1
The board-level design must ensure that the reflected waveform at the pad does not exceed the limits
provided in the recommended operating conditions in the datasheet. This is a requirement to ensure
long-term reliability.
This solution requires two board resistors, as demonstrated in Figure 7-5 on page 172. Here are some
examples of possible resistor values (based on a simplified simulation model with no line effects and
10 Ω transmitter output resistance, where Rtx_out_high = (VCCI – VOH) / IOH and
Rtx_out_low = VOL / IOL).
Example 1 (high speed, high current):
Rtx_out_high = Rtx_out_low = 10 Ω
R1 = 36 Ω (±5%), P(r1)min = 0.069 Ω
R2 = 82 Ω (±5%), P(r2)min = 0.158 Ω
Imax_tx = 5.5 V / (82 × 0.95 + 36 × 0.95 + 10) = 45.04 mA
tRISE = tFALL = 0.85 ns at C_pad_load = 10 pF (includes up to 25% safety margin)
tRISE = tFALL = 4 ns at C_pad_load = 50 pF (includes up to 25% safety margin)

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Example 2 (low–medium speed, medium current):

Rtx_out_high = Rtx_out_low = 10 Ω
R1 = 220 Ω (±5%), P(r1)min = 0.018 Ω
R2 = 390 Ω (±5%), P(r2)min = 0.032 Ω
Imax_tx = 5.5 V / (220 × 0.95 + 390 × 0.95 + 10) = 9.17 mA
tRISE = tFALL = 4 ns at C_pad_load = 10 pF (includes up to 25% safety margin)
tRISE = tFALL = 20 ns at C_pad_load = 50 pF (includes up to 25% safety margin)
Other values of resistors are also allowed as long as the resistors are sized appropriately to limit the
voltage at the receiving end to 2.5 V < Vin (rx) < 3.6 V when the transmitter sends a logic 1. This range of
Vin_dc(rx) must be assured for any combination of transmitter supply (5 V ± 0.5 V), transmitter output
resistance, and board resistor tolerances.
Temporary overshoots are allowed according to the overshoot and undershoot table in the datasheet.

Solution 1

I/O Input

5.5 V 3.3 V

Rext1
Rext2

Requires two board resistors,

LVCMOS 3.3 V I/Os

Figure 7-5 • Solution 1

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Solution 2
This solution requires one board resistor and one Zener 3.3 V diode, as demonstrated in Figure 7-6.

Solution 2

I/O Input

5.5 V 3.3 V

Rext1
Zener
3.3 V

Requires one board resistor, one

Zener 3.3 V diode, LVCMOS 3.3 V I/Os

Figure 7-6 • Solution 2

Solution 3
This solution requires a bus switch on the board, as demonstrated in Figure 7-7.

Solution 3

I/O Input

3.3 V
Bus
Switch
IDTQS32X23
5.5 V

5.5 V

Requires a bus switch on the board,

LVTTL/LVCMOS 3.3 V I/Os.

Figure 7-7 • Solution 3

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Table 7-13 • Comparison Table for 5 V–Compliant Receiver Solutions

Solution Board Components Speed Current Limitations
1
1 Two resistors Low to High Limited by transmitter's drive strength
2 Resistor and Zener 3.3 V Medium Limited by transmitter's drive strength
3 Bus switch High N/A
Notes:
1. Speed and current consumption increase as the board resistance values decrease.
2. Resistor values ensure I/O diode long-term reliability.
3. At 70°C, customers could still use 420 Ω on every I/O.
4. At 85°C, a 5 V solution on every other I/O is permitted, since the resistance is lower (150 Ω ) and
the current is higher. Also, the designer can still use 420 Ω and use the solution on every I/O.
5. At 100°C, the 5 V solution on every I/O is permitted, since 420 Ω are used to limit the current to
5.9 mA.

5 V Output Tolerance
nano Standard I/Os must be set to 3.3 V LVTTL or 3.3 V LVCMOS mode to reliably drive 5 V TTL
receivers. It is also critical that there be NO external I/O pull-up resistor to 5 V, since this resistor would
pull the I/O pad voltage beyond the 3.6 V absolute maximum value and consequently cause damage to
the I/O.
When set to 3.3 V LVTTL or 3.3 V LVCMOS mode, the I/Os can directly drive signals into 5 V TTL
receivers. In fact, VOL = 0.4 V and VOH = 2.4 V in both 3.3 V LVTTL and 3.3 V LVCMOS modes exceeds
the VIL = 0.8 V and VIH = 2 V level requirements of 5 V TTL receivers. Therefore, level 1 and level 0 will
be recognized correctly by 5 V TTL receivers.

Schmitt Trigger
A Schmitt trigger is a buffer used to convert a slow or noisy input signal into a clean one before passing it
to the FPGA. Using Schmitt trigger buffers guarantees a fast, noise-free input signal to the FPGA.
nano devices have Schmitt triggers built into their I/O circuitry. Schmitt Trigger is available on all I/O
configurations.
This feature can be implemented by using a Physical Design Constraints (PDC) command (Table 7-5 on
page 163) or by selecting a check box in the I/O Attribute Editor in Designer. The check box is cleared by
default.

I/O Register Combining

Every I/O has several embedded registers in the I/O tile that are close to the I/O pads. Rather than using
the internal register from the core, the user has the option of using these registers for faster clock-to-out
timing, and external hold and setup. When combining these registers at the I/O buffer, some architectural
rules must be met. Provided these rules are met, the user can enable register combining globally during
Compile (as shown in the "Compiling the Design" section in the "I/O Software Control in Low Power
Flash Devices" section on page 185.
This feature is supported by all I/O standards.

Rules for Registered I/O Function:

1. The fanout between an I/O pin (D, Y, or E) and a register must be equal to one for combining to be
considered on that pin.
2. All registers (Input, Output, and Output Enable) connected to an I/O must share the same clear or
preset function:
– If one of the registers has a CLR pin, all the other registers that are candidates for combining
in the I/O must have a CLR pin.

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– If one of the registers has a PRE pin, all the other registers that are candidates for combining
in the I/O must have a PRE pin.
– If one of the registers has neither a CLR nor a PRE pin, all the other registers that are
candidates for combining must have neither a CLR nor a PRE pin.
– If the clear or preset pins are present, they must have the same polarity.
– If the clear or preset pins are present, they must be driven by the same signal (net).
3. For single-tile devices (10 k, 15 k, and 20 k): Registers connected to an I/O on the Output and
Output Enable pins must have the same clock function (both CLR and CLK are shared among all
registers):
– Both the Output and Output Enable registers must not have an E pin (clock enable).
4. For dual-tile devices (60 k, 125 k, and 250 k): Registers connected to an I/O on the Output and
Output Enable pins must have the same clock and enable function:
– Both the Output and Output Enable registers must have an E pin (clock enable), or none at all.
– If the E pins are present, they must have the same polarity. The CLK pins must also have the
same polarity.
In some cases, the user may want registers to be combined with the input of a bibuf while
maintaining the output as-is. This can be achieved by using PDC commands as follows:
set_io <signal name> -REGISTER yes ------register will combine
set_preserve <signal name> ----register will not combine

Weak Pull-Up and Weak Pull-Down Resistors

nano devices support optional weak pull-up and pull-down resistors on each I/O pin. When the I/O is
pulled up, it is connected to the VCCI of its corresponding I/O bank. When it is pulled down, it is
connected to GND. Refer to the datasheet for more information.
For low power applications and when using IGLOO nano devices, configuration of the pull-up or pull-
down of the I/O can be used to set the I/O to a known state while the device is in Flash*Freeze mode.
Refer to "Flash*Freeze Technology and Low Power Modes" in an applicable FPGA fabric user’s guide for
more information.
The Flash*Freeze (FF) pin cannot be configured with a weak pull-down or pull-up I/O attribute, as the
signal needs to be driven at all times.

Output Slew Rate Control

The slew rate is the amount of time an input signal takes to get from logic LOW to logic HIGH or vice
versa.
It is commonly defined as the propagation delay between 10% and 90% of the signal's voltage swing.
Slew rate control is available for the output buffers of low power flash devices. The output buffer has a
programmable slew rate for both HIGH-to-LOW and LOW-to-HIGH transitions.
The slew rate can be implemented by using a PDC command (Table 7-5 on page 163), setting it "High"
or "Low" in the I/O Attribute Editor in Designer, or instantiating a special I/O macro. The default slew rate
value is "High."
Microsemi recommends the high slew rate option to minimize the propagation delay. This high-speed
option may introduce noise into the system if appropriate signal integrity measures are not adopted.
Selecting a low slew rate reduces this kind of noise but adds some delays in the system. Low slew rate is
recommended when bus transients are expected.

Output Drive
The output buffers of nano devices can provide multiple drive strengths to meet signal integrity
requirements. The LVTTL and LVCMOS (except 1.2 V LVCMOS) standards have selectable drive
strengths.
Drive strength should also be selected according to the design requirements and noise immunity of the
system.

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Refer to Table 7-10 on page 169 for more information about the slew rate and drive strength specification
for LVTTL/LVCMOS 3.3 V, LVCMOS 2.5 V, LVCMOS 1.8 V, LVCMOS 1.5 V, and LVCMOS 1.2 V output
buffers.

Table 7-14 • nano Output Drive and Slew

I/O Standards 2 mA 4 mA 6 mA 8 mA Slew
LVTTL / LVCMOS 3.3 V ✓ ✓ ✓ ✓ High Low

LVCMOS 2.5 V ✓ ✓ ✓ ✓ High Low

LVCMOS 1.8 V ✓ ✓ – – High Low

LVCMOS 1.5 V ✓ – – – High Low

LVCMOS 1.2 V ✓ – – – High Low

Simultaneously Switching Outputs (SSOs) and Printed Circuit

Board Layout
Each I/O voltage bank has a separate ground and power plane for input and output circuits. This isolation
is necessary to minimize simultaneous switching noise from the input and output (SSI and SSO). The
switching noise (ground bounce and power bounce) is generated by the output buffers and transferred
into input buffer circuits, and vice versa.
SSOs can cause signal integrity problems on adjacent signals that are not part of the SSO bus. Both
inductive and capacitive coupling parasitics of bond wires inside packages and of traces on PCBs will
transfer noise from SSO busses onto signals adjacent to those busses. Additionally, SSOs can produce
ground bounce noise and VCCI dip noise. These two noise types are caused by rapidly changing
currents through GND and VCCI package pin inductances during switching activities (EQ 1 and EQ 2).
Ground bounce noise voltage = L(GND) × di/dt
EQ 1
VCCI dip noise voltage = L(VCCI) × di/dt
EQ 2
Any group of four or more input pins switching on the same clock edge is considered an SSO bus. The
shielding should be done both on the board and inside the package unless otherwise described.
In-package shielding can be achieved in several ways; the required shielding will vary depending on
whether pins next to the SSO bus are LVTTL/LVCMOS inputs or LVTTL/LVCMOS outputs. Board traces
in the vicinity of the SSO bus have to be adequately shielded from mutual coupling and inductive noise
that can be generated by the SSO bus. Also, noise generated by the SSO bus needs to be reduced
inside the package.
PCBs perform an important function in feeding stable supply voltages to the IC and, at the same time,
maintaining signal integrity between devices.
Key issues that need to be considered are as follows:
• Power and ground plane design and decoupling network design
• Transmission line reflections and terminations
For extensive data per package on the SSO and PCB issues, refer to the "ProASIC3/E SSO and Pin
Placement and Guidelines" chapter of the ProASIC3 Device Family User’s Guide.

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I/O Software Support

In Microsemi's Libero software, default settings have been defined for the various I/O standards
supported. Changes can be made to the default settings via the use of attributes; however, not all I/O
attributes are applicable for all I/O standards.

Table 7-15 • nano I/O Attributes vs. I/O Standard Applications

OUT_LOAD
(output only)
SLEW
(output OUT_DRIVE IGLOO ProASIC Schmitt Combine
I/O Standard only) (output only) RES_PULL nano 3 nano Trigger Hold State Register
LVTTL/ ✓ ✓ (8) ✓ ✓ ✓ ✓ ✓ ✓
LVCMOS3.3
LVCMOS2.5 ✓ ✓ (8) ✓ ✓ ✓ ✓ ✓ ✓
LVCMOS1.8 ✓ ✓ (4) ✓ ✓ ✓ ✓ ✓ ✓
LVCMOS1.5 ✓ ✓ (2) ✓ ✓ ✓ ✓ ✓ ✓
LVCMOS1.2 ✓ ✓ (2) ✓ ✓ – ✓ ✓ ✓
Software HIGH Refer to None All 10 pF or Off Off No
Defaults numbers in Devices: 35 pF*
parentheses 5 pF
in above cells.
Note: *10 pF for A3PN010, A3PN015, and A3PN020; 35 pF for A3PN060, A3PN125, and A3PN250.

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User I/O Naming Convention

Due to the comprehensive and flexible nature of nano Standard I/Os, a naming scheme is used to show
the details of each I/O (Figure 7-8). The name identifies to which I/O bank it belongs.
I/O Nomenclature = FF/Gmn/IOuxwBy

Gmn is only used for I/Os that also have CCC access—i.e., global pins.
FF = Indicates the I/O dedicated for the Flash*Freeze mode activation pin
G = Global
m = Global pin location associated with each CCC on the device: A (northwest corner), B (northeast
corner), C (east middle), D (southeast corner), E (southwest corner), and F (west middle)
n = Global input MUX and pin number of the associated Global location m—either A0, A1, A2, B0,
B1, B2, C0, C1, or C2. Refer to the "Global Resources in Low Power Flash Devices" section on
page 31 for information about the three input pins per clock source MUX at CCC location m.
u = I/O pair number in the bank, starting at 00 from the northwest I/O bank and proceeding in a
clockwise direction
x = R (Regular—single-ended) for the I/Os that support single-ended standards.
w = S (Single-Ended)
B = Bank
y = Bank number (0–3). The Bank number starts at 0 from the northwest I/O bank and proceeds in
a clockwise direction.
VCCIB0

VCCIB0

VCCIB0

VCCIB0
GNDQ

GND

GND

GND
VCC

VCC
GND
CCC Bank 0 CCC
"A" "B" GND
GNDQ
VCCIB1
Vcc
GND
Bank 3 Bank 1 VCC
VCCIB3
GND
VCCIB1

VCOMPLF CCC/PLL CCC

VCCPLF "F" "C"
GND
VCC GND
VCC
VCCIB3
Bank 3 Bank 1 VCCIB1
GND
GND
VCCIB3
GNDQ VJTAG
GND TRST
CCC CCC TDO
"E" Bank 2 "D" VPUMP
GND
VCCIB2
GND

VCC
VCCIB2

GND
VCC
VCCIB2

GND
GNDQ
VCCIB2

TMS
TDI
TCK

Figure 7-8 • I/O Naming Conventions for nano Devices – Top View

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I/O Bank Architecture and CCC Naming Conventions

The nano products feature varying bank architectures which have been optimized to balance silicon area
with I/O and clocking flexibility. The A standard naming scheme is used to illustrate the I/O Bank
architecture and the CCCs associated with each architecture.

Table 7-16 • A Standard Naming Scheme

Name Description
Bank x Refers to the specific bank number within which an I/O resides
CCC Clock Condition Circuit with simple clock delay operations as well as clock spine
access
CCC-GL Clock Condition Circuit with Global Locations for chip reach clocking. These CCCs
support programmable delays but do not have an integrated PLL.
CCC-PLL Clock Condition Circuit with integrated PLL and programmable delays
Chip Reach Access to chip global lines
Quadrant Reach Access to quadrant global lines

Bank 1

Bank 1 AGLN010 Bank 0

A3PN010

CCC- CCC-
GL Bank 1 GL

Legend

Chip Reach CCC-GL = CCC with no PLL

(does not support programmable delays)

Figure 7-9 • I/O Bank Architecture of AGLN010 and A3PN010 Devices

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I/O Structures in nano Devices

Bank 1

Bank 2 AGLN015/020 Bank 0

A3PN015/020

CCC- CCC-
Bank 1
GL GL

Legend

Chip Reach CCC-GL = CCC with no PLL

(does not support programmable delays)

Figure 7-10 • I/O Bank Architecture of AGLN015/020 and A3PN015/020 Devices

CCC Bank 0 CCC

Bank 1 Bank 0

CCC- AGLN060/125 CCC

PLL A3PN060/125

Bank 1 Bank 0

CCC Bank 1 CCC

Legend

Chip Reach CCC = CCC with no PLL

(supports programmable delays)
Quadrant Reach CCC-PLL = CCC with PLL

Figure 7-11 • I/O Bank Architecture of AGLN060/125 and A3PN060/125 Devices

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CCC Bank 0 CCC

Bank 3 Bank 1

CCC- AGLN250 CCC

PLL A3PN250

Bank 3 Bank 1

CCC Bank 2 CCC

Legend

Chip Reach CCC = CCC with no PLL

(supports programmable delays)
Quadrant Reach CCC-PLL = CCC with PLL

Figure 7-12 • I/O Bank Architecture of AGLN250/A3PN250 Devices

Board-Level Considerations
Low power flash devices have robust I/O features that can help in reducing board-level components. The
devices offer single-chip solutions, which makes the board layout simpler and more immune to signal
integrity issues. Although, in many cases, these devices resolve board-level issues, special attention
should always be given to overall signal integrity. This section covers important board-level
considerations to facilitate optimum device performance.

Termination
Proper termination of all signals is essential for good signal quality. Nonterminated signals, especially
clock signals, can cause malfunctioning of the device.
For general termination guidelines, refer to the Board-Level Considerations application note for
Microsemi FPGAs. Also refer to the "Pin Descriptions and Packaging" chapter of the appropriate device
datasheet for termination requirements for specific pins.
Low power flash I/Os are equipped with on-chip pull-up/-down resistors. The user can enable these
resistors by instantiating them either in the top level of the design (refer to the IGLOO, ProASIC3,
SmartFusion, and Fusion Macro Library Guide for the available I/O macros with pull-up/-down) or in the
I/O Attribute Editor in Designer if generic input or output buffers are instantiated in the top level. Unused
I/O pins are configured as inputs with pull-up resistors.
As mentioned earlier, low power flash devices have multiple programmable drive strengths, and the user
can eliminate unwanted overshoot and undershoot by adjusting the drive strengths.

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Power-Up Behavior
Low power flash devices are power-up/-down friendly; i.e., no particular sequencing is required for
power-up and power-down. This eliminates extra board components for power-up sequencing, such as a
power-up sequencer.
During power-up, all I/Os are tristated, irrespective of I/O macro type (input buffers, output buffers, I/O
buffers with weak pull-ups or weak pull-downs, etc.). Once I/Os become activated, they are set to the
user-selected I/O macros. Refer to the "Power-Up/-Down Behavior of Low Power Flash Devices" section
on page 307 for details.

Drive Strength
Low power flash devices have up to four programmable output drive strengths. The user can select the
drive strength of a particular output in the I/O Attribute Editor or can instantiate a specialized I/O macro,
such as OUTBUF_S_8 (slew = low, out_drive = 8 mA).
The maximum available drive strength is 8 mA per I/O. Though no I/O should be forced to source or sink
more than 8 mA indefinitely, I/Os may handle a higher amount of current (refer to the device IBIS model
for maximum source/sink current) during signal transition (AC current). Every device package has its own
power dissipation limit; hence, power calculation must be performed accurately to determine how much
current can be tolerated per I/O within that limit.

I/O Interfacing
Low power flash devices are 5 V–input– and 5 V–output–tolerant without adding any extra circuitry.
Along with other low-voltage I/O macros, this 5 V tolerance makes these devices suitable for many types
of board component interfacing.
Table 7-17 shows some high-level interfacing examples using low power flash devices.

Table 7-17 • nano High-Level Interface

Clock I/O
Interface Type Frequency Type Signals In Signals Out Data I/O
GM Src Sync 125 MHz LVTTL 8 8 125 Mbps
TBI Src Sync 125 MHz LVTTL 10 10 125 Mbps

Conclusion
IGLOO nano and ProASIC3 nano device support for multiple I/O standards minimizes board-level
components and makes possible a wide variety of applications. The Microsemi Designer software,
integrated with Libero SoC, presents a clear visual display of I/O assignments, allowing users to verify
I/O and board-level design requirements before programming the device. The nano device I/O features
and functionalities ensure board designers can produce low-cost and low power FPGA applications
fulfilling the complexities of contemporary design needs.

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Related Documents

Application Notes
Board-Level Considerations
http://www.microsemi.com/soc/documents/ALL_AC276_AN.pdf

User’s Guides
Libero SoC User’s Guide
http://www.microsemi.com/soc/documents/libero_ug.pdf
IGLOO, ProASIC3, SmartFusion, and Fusion Macro Library Guide
http://www.microsemi.com/soc/documents/pa3_libguide_ug.pdf
SmartGen Core Reference Guide
http://www.microsemi.com/soc/documents/genguide_ug.pdf

List of Changes
The following table lists critical changes that were made in each revision of the document.

Date Changes Page

August 2012 Figure 7-2 • I/O Block Logical Representation for Dual-Tile Designs (60 k,125 k, 160
and 250 k Devices) was revised to indicate that resets on registers 1, 3, 4, and 5
are active high rather than active low (SAR 40698).
The hyperlink for the Board-Level Considerations application note was corrected 181, 183
(SAR 36663).
June 2011 Figure 7-2 • I/O Block Logical Representation for Dual-Tile Designs (60 k,125 k, 160
and 250 k Devices) was revised so that the I/O_CLR and I/O_OCLK nets are no
longer joined in front of Input Register 3 but instead on the branch of the CLR/PRE
signal (SAR 26052).
The following sentence was removed from the "LVCMOS (Low-Voltage CMOS)" 166
section (SAR 22634): "All these versions use a 3.3 V–tolerant CMOS input buffer
and a push-pull output buffer."
The "5 V Input Tolerance" section was revised to state that 5 V input tolerance can 171
be used with LVTTL 3.3 V and LVCMOS 3.3 V configurations. LVCMOS 2.5 V,
LVCMOS 1.8 V, LVCMOS 1.5 V, and LVCMOS 1.2 V were removed from the
sentence listing supported configurations (SAR 22427).

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8 – I/O Software Control in Low Power Flash
Devices
Fusion, IGLOO, and ProASIC3 I/Os provide more design flexibility, allowing the user to control specific
features by enabling certain I/O standards. Some features are selectable only for certain I/O standards,
whereas others are available for all I/O standards. For example, slew control is not supported by
differential I/O standards. Conversely, I/O register combining is supported by all I/O standards. For
detailed information about which I/O standards and features are available on each device and each I/O
type, refer to the I/O Structures section of the handbook for the device you are using.
Figure 8-1 shows the various points in the software design flow where a user can provide input or control
of the I/O selection and parameters. A detailed description is provided throughout this document.

Design Entry

1. I/O Macro 3. Instantiating 4. Generic

2. I/O Buffer
Using I/O Library Buffer Using
Cell Schematic
SmartGen Macro in HDL 1, 2, 3
Entry
Code Method

5. Synthesis

6.1 I/O
6. Compile Assignments by
PDC Import

7. I/O Assignments by Multi-View Navigator (MVN)

I/O Standards and

I/O Standard Selection I/O Attribute Selection
VREF Assignment by
for Generic I/O Macro for I/O Standards
I/O Bank Assigner

8. Layout
and Other
Steps

Figure 8-1 • User I/O Assignment Flow Chart

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I/O Software Control in Low Power Flash Devices

Flash FPGAs I/O Support

The flash FPGAs listed in Table 8-1 support I/Os and the functions described in this document.

Table 8-1 • Flash-Based FPGAs

Series Family* Description
IGLOO IGLOO Ultra-low power 1.2 V to 1.5 V FPGAs with Flash*Freeze technology
IGLOOe Higher density IGLOO FPGAs with six PLLs and additional I/O standards
IGLOO nano The industry’s lowest-power, smallest-size solution
IGLOO PLUS IGLOO FPGAs with enhanced I/O capabilities
ProASIC3 ProASIC3 Low power, high-performance 1.5 V FPGAs
ProASIC3E Higher density ProASIC3 FPGAs with six PLLs and additional I/O standards
ProASIC3 nano Lowest-cost solution with enhanced I/O capabilities
ProASIC3L ProASIC3 FPGAs supporting 1.2 V to 1.5 V with Flash*Freeze technology
RT ProASIC3 Radiation-tolerant RT3PE600L and RT3PE3000L
Military ProASIC3/EL Military temperature A3PE600L, A3P1000, and A3PE3000L
Automotive ProASIC3 ProASIC3 FPGAs qualified for automotive applications
Fusion Fusion Mixed signal FPGA integrating ProASIC3 FPGA fabric, programmable
analog block, support for ARM® Cortex™-M1 soft processors, and flash
memory into a monolithic device
Note: *The device names link to the appropriate datasheet, including product brief, DC and switching characteristics,
and packaging information.

IGLOO Terminology
In documentation, the terms IGLOO series and IGLOO devices refer to all of the IGLOO devices as listed
in Table 8-1. Where the information applies to only one product line or limited devices, these exclusions
will be explicitly stated.

ProASIC3 Terminology
In documentation, the terms ProASIC3 series and ProASIC3 devices refer to all of the ProASIC3 devices
as listed in Table 8-1. Where the information applies to only one product line or limited devices, these
exclusions will be explicitly stated.
To further understand the differences between the IGLOO and ProASIC3 devices, refer to the Industry’s
Lowest Power FPGAs Portfolio.

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Software-Controlled I/O Attributes

Users may modify these programmable I/O attributes using the I/O Attribute Editor. Modifying an I/O
attribute may result in a change of state in Designer. Table 8-2 details which steps have to be re-run as a
function of modified I/O attribute.

Table 8-2 • Designer State (resulting from I/O attribute modification)

Designer States1
I/O Attribute Compile Layout Fuse Timing Power
2
Slew Control No No Yes Yes Yes
Output Drive (mA) No No Yes Yes Yes
Skew Control No No Yes Yes Yes
Resistor Pull No No Yes Yes Yes
Input Delay No No Yes Yes Yes
Schmitt Trigger No No Yes Yes Yes
OUT_LOAD No No No Yes Yes
COMBINE_REGISTER Yes Yes N/A N/A N/A
Notes:
1. No = Remains the same, Yes = Re-run the step, N/A = Not applicable
2. Skew control does not apply to IGLOO nano, IGLOO PLUS, and ProASIC3 nano devices.
3. Programmable input delay is applicable only for ProASIC3E, ProASIC3EL, RT ProASIC3, and
IGLOOe devices.

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Implementing I/Os in Microsemi Software

Microsemi Libero SoC software is integrated with design entry tools such as the SmartGen macro
builder, the ViewDraw schematic entry tool, and an HDL editor. It is also integrated with the synthesis and
Designer tools. In this section, all necessary steps to implement the I/Os are discussed.

Design Entry
There are three ways to implement I/Os in a design:
1. Use the SmartGen macro builder to configure I/Os by generating specific I/O library macros and
then instantiating them in top-level code. This is especially useful when creating I/O bus
structures.
2. Use an I/O buffer cell in a schematic design.
3. Manually instantiate specific I/O macros in the top-level code.
If technology-specific macros, such as INBUF_LVCMOS33 and OUTBUF_PCI, are used in the HDL
code or schematic, the user will not be able to change the I/O standard later on in Designer. If generic I/O
macros are used, such as INBUF, OUTBUF, TRIBUF, CLKBUF, and BIBUF, the user can change the I/O
standard using the Designer I/O Attribute Editor tool.

Using SmartGen for I/O Configuration

The SmartGen tool in Libero SoC provides a GUI-based method of configuring the I/O attributes. The
user can select certain I/O attributes while configuring the I/O macro in SmartGen. The steps to configure
an I/O macro with specific I/O attributes are as follows:
1. Open Libero SoC.
2. On the left-hand side of the Catalog View, select I/O, as shown in Figure 8-2.

Figure 8-2 • SmartGen Catalog

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3. Double-click I/O to open the Create Core window, which is shown in Figure 8-3).

Figure 8-3 • I/O Create Core Window

As seen in Figure 8-3, there are five tabs to configure the I/O macro: Input Buffers, Output Buffers,
Bidirectional Buffers, Tristate Buffers, and DDR.
Input Buffers
There are two variations: Regular and Special.
If the Regular variation is selected, only the Width (1 to 128) needs to be entered. The default value for
Width is 1.
The Special variation has Width, Technology, Voltage Level, and Resistor Pull-Up/-Down options (see
Figure 8-3). All the I/O standards and supply voltages (VCCI) supported for the device family are available
for selection.

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Output Buffers
There are two variations: Regular and Special.
If the Regular variation is selected, only the Width (1 to 128) needs to be entered. The default value for
Width is 1.
The Special variation has Width, Technology, Output Drive, and Slew Rate options.
Bidirectional Buffers
There are two variations: Regular and Special.
The Regular variation has Enable Polarity (Active High, Active Low) in addition to the Width option.
The Special variation has Width, Technology, Output Drive, Slew Rate, and Resistor Pull-Up/-Down
options.
Tristate Buffers
Same as Bidirectional Buffers.
DDR
There are eight variations: DDR with Regular Input Buffers, Special Input Buffers, Regular Output
Buffers, Special Output Buffers, Regular Tristate Buffers, Special Tristate Buffers, Regular Bidirectional
Buffers, and Special Bidirectional Buffers.
These variations resemble the options of the previous I/O macro. For example, the Special Input Buffers
variation has Width, Technology, Voltage Level, and Resistor Pull-Up/-Down options. DDR is not
available on IGLOO PLUS devices.
4. Once the desired configuration is selected, click the Generate button. The Generate Core
window opens (Figure 8-4).
5. Enter a name for the macro. Click OK. The core will be generated and saved to the appropriate
location within the project files (Figure 8-5 on page 191).

Figure 8-4 • Generate Core Window

6. Instantiate the I/O macro in the top-level code.

The user must instantiate the DDR_REG or DDR_OUT macro in the design. Use SmartGen to
generate both these macros and then instantiate them in your top level. To combine the DDR
macros with the I/O, the following rules must be met:

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Rules for the DDR I/O Function

• The fanout between an I/O pin (D or Y) and a DDR (DDR_REG or DDR_OUT) macro must be
equal to one for the combining to happen on that pin.
• If a DDR_REG macro and a DDR_OUT macro are combined on the same bidirectional I/O, they
must share the same clear signal.
• Registers will not be combined in an I/O in the presence of DDR combining on the same I/O.

Using the I/O Buffer Schematic Cell

Libero SoC software includes the ViewDraw schematic entry tool. Using ViewDraw, the user can insert
any supported I/O buffer cell in the top-level schematic. Figure 8-5 shows a top-level schematic with
different I/O buffer cells. When synthesized, the netlist will contain the same I/O macro.

Figure 8-5 • I/O Buffer Schematic Cell Usage

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Instantiating in HDL code

All the supported I/O macros can be instantiated in the top-level HDL code (refer to the IGLOO,
ProASIC3, SmartFusion, and Fusion Macro Library Guide for a detailed list of all I/O macros). The
following is an example:
library ieee;
use ieee.std_logic_1164.all;
library proasic3e;

entity TOP is
port(IN2, IN1 : in std_logic; OUT1 : out std_logic);
end TOP;

architecture DEF_ARCH of TOP is

component INBUF_LVCMOS5U
port(PAD : in std_logic := 'U'; Y : out std_logic);
end component;

component INBUF_LVCMOS5
port(PAD : in std_logic := 'U'; Y : out std_logic);
end component;

component OUTBUF_SSTL3_II
port(D : in std_logic := 'U'; PAD : out std_logic);
end component;

Other component …..

signal x, y, z…….other signals : std_logic;

begin

I1 : INBUF_LVCMOS5U
port map(PAD => IN1, Y =>x);
I2 : INBUF_LVCMOS5
port map(PAD => IN2, Y => y);
I3 : OUTBUF_SSTL3_II
port map(D => z, PAD => OUT1);

other port mapping…

end DEF_ARCH;

Synthesizing the Design

Libero SoC integrates with the Synplify® synthesis tool. Other synthesis tools can also be used with
Libero SoC. Refer to the Libero SoC User’s Guide or Libero online help for details on how to set up the
Libero tool profile with synthesis tools from other vendors.
During synthesis, the following rules apply:
• Generic macros:
– Users can instantiate generic INBUF, OUTBUF, TRIBUF, and BIBUF macros.
– Synthesis will automatically infer generic I/O macros.
– The default I/O technology for these macros is LVTTL.
– Users will need to use the I/O Attribute Editor in Designer to change the default I/O standard if
needed (see Figure 8-6 on page 193).
• Technology-specific I/O macros:
– Technology-specific I/O macros, such as INBUF_LVCMO25 and OUTBUF_GTL25, can be
instantiated in the design. Synthesis will infer these I/O macros in the netlist.

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– The I/O standard of technology-specific I/O macros cannot be changed in the I/O Attribute
Editor (see Figure 8-6).
– The user MUST instantiate differential I/O macros (LVDS/LVPECL) in the design. This is the
only way to use these standards in the design (IGLOO nano and ProASIC3 nano devices do
not support differential inputs).
– To implement the DDR I/O function, the user must instantiate a DDR_REG or DDR_OUT
macro. This is the only way to use a DDR macro in the design.

Figure 8-6 • Assigning a Different I/O Standard to the Generic I/O Macro

Performing Place-and-Route on the Design

The netlist created by the synthesis tool should now be imported into Designer and compiled. During
Compile, the user can specify the I/O placement and attributes by importing the PDC file. The user can
also specify the I/O placement and attributes using ChipPlanner and the I/O Attribute Editor under MVN.

Defining I/O Assignments in the PDC File

A PDC file is a Tcl script file specifying physical constraints. This file can be imported to and exported
from Designer.
Table 8-3 shows I/O assignment constraints supported in the PDC file.

Table 8-3 • PDC I/O Constraints

Command Action Example Comment
I/O Banks Setting Constraints
set_iobank Sets the I/O supply set_iobank bankname Must use in case of mixed I/O
voltage, VCCI, and the [-vcci vcci_voltage] voltage (VCCI) design
[-vref vref_voltage]
input reference voltage,
VREF, for the specified I/O set_iobank Bank7 -vcci 1.50
bank. -vref 0.75
set_vref Assigns a VREF pin to a set_vref -bank [bankname] Must use if voltage-
bank. [pinnum] referenced I/Os are used
set_vref -bank Bank0
685 704 723 742 761
set_vref_defaults Sets the default VREF set_vref_defaults bankname
pins for the specified
set_vref_defaults bank2
bank. This command is
ignored if the bank does
not need a VREF pin.
Note: Refer to the Libero SoC User’s Guide for detailed rules on PDC naming and syntax conventions.

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Table 8-3 • PDC I/O Constraints (continued)

Command Action Example Comment
I/O Attribute Constraint
set_io Sets the attributes of an set_io portname If the I/O macro is generic
I/O [-pinname value] (e.g., INBUF) or technology-
[-fixed value]
specific (INBUF_LVCMOS25),
[-iostd value]
[-out_drive value]
then all I/O attributes can be
[-slew value] assigned using this constraint.
[-res_pull value] If the netlist has an I/O macro
[-schmitt_trigger value] that specifies one of its
[-in_delay value] attributes, that attribute
[-skew value] cannot be changed using this
[-out_load value]
constraint, though other
[-register value]
attributes can be changed.
set_io IN2 -pinname 28 Example: OUTBUF_S_24
-fixed yes -iostd LVCMOS15 (low slew, output drive 24 mA)
-out_drive 12 -slew high
Slew and output drive cannot
-RES_PULL None
-SCHMITT_TRIGGER Off
be changed.
-IN_DELAY Off –skew off
-REGISTER No
I/O Region Placement Constraints
define_region Defines either a define_region If any number of I/Os must be
rectangular region or a -name [region_name] assigned to a particular I/O
-type [region_type] x1 y1 x2 y2
rectilinear region region, such a region can be
define_region -name test
created with this constraint.
-type inclusive 0 15 2 29
assign_region Assigns a set of macros assign_region [region name] This constraint assigns I/O
to a specified region [macro_name...] macros to the I/O regions.
When assigning an I/O macro,
assign_region test U12
PDC naming conventions
must be followed if the macro
name contains special
characters; e.g., if the macro
name is \\$1I19\\, the correct
use of escape characters is
\\\\\$1I19\\\\.
Note: Refer to the Libero SoC User’s Guide for detailed rules on PDC naming and syntax conventions.

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Compiling the Design

During Compile, a PDC I/O constraint file can be imported along with the netlist file. If only the netlist file
is compiled, certain I/O assignments need to be completed before proceeding to Layout. All constraints
that can be entered in PDC can also be entered using ChipPlanner, I/O Attribute Editor, and PinEditor.
There are certain rules that must be followed in implementing I/O register combining and the I/O DDR
macro (refer to the I/O Registers section of the handbook for the device that you are using and the "DDR"
section on page 190 for details). Provided these rules are met, the user can enable or disable I/O register
combining by using the PDC command set_io portname –register yes|no in the I/O Attribute Editor
or selecting a check box in the Compile Options dialog box (see Figure 8-7). The Compile Options dialog
box appears when the design is compiled for the first time. It can also be accessed by choosing Options
> Compile during successive runs. I/O register combining is off by default. The PDC command overrides
the setting in the Compile Options dialog box.

Figure 8-7 • Setting Register Combining During Compile

Understanding the Compile Report

The I/O bank report is generated during Compile and displayed in the log window. This report lists the I/O
assignments necessary before Layout can proceed.
When Designer is started, the I/O Bank Assigner tool is run automatically if the Layout command is
executed. The I/O Bank Assigner takes care of the necessary I/O assignments. However, these
assignments can also be made manually with MVN or by importing the PDC file. Refer to the "Assigning
Technologies and VREF to I/O Banks" section on page 198 for further description.
The I/O bank report can also be extracted from Designer by choosing Tools > Report and setting the
Report Type to IOBank.
This report has the following tables: I/O Function, I/O Technology, I/O Bank Resource Usage, and I/O
Voltage Usage. This report is useful if the user wants to do I/O assignments manually.

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I/O Function
Figure 8-8 shows an example of the I/O Function table included in the I/O bank report:

Figure 8-8 • I/O Function Table

This table lists the number of input I/Os, output I/Os, bidirectional I/Os, and differential input and output
I/O pairs that use I/O and DDR registers.
Note: IGLOO nano and ProASIC3 nano devices do not support differential inputs.
Certain rules must be met to implement registered and DDR I/O functions (refer to the I/O Structures
section of the handbook for the device you are using and the "DDR" section on page 190).

I/O Technology
The I/O Technology table (shown in Figure 8-9) gives the values of VCCI and VREF (reference voltage)
for all the I/O standards used in the design. The user should assign these voltages appropriately.

Figure 8-9 • I/O Technology Table

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I/O Bank Resource Usage

This is an important portion of the report. The user must meet the requirements stated in this table.
Figure 8-10 shows the I/O Bank Resource Usage table included in the I/O bank report:

Figure 8-10 • I/O Bank Resource Usage Table

The example in Figure 8-10 shows that none of the I/O macros is assigned to the bank because more
than one VCCI is detected.

I/O Voltage Usage

The I/O Voltage Usage table provides the number of VREF (E devices only) and VCCI assignments
required in the design. If the user decides to make I/O assignments manually (PDC or MVN), the issues
listed in this table must be resolved before proceeding to Layout. As stated earlier, VREF assignments
must be made if there are any voltage-referenced I/Os.
Figure 8-11 shows the I/O Voltage Usage table included in the I/O bank report.

Figure 8-11 • I/O Voltage Usage Table

The table in Figure 8-11 indicates that there are two voltage-referenced I/Os used in the design. Even
though both of the voltage-referenced I/O technologies have the same VCCI voltage, their VREF
voltages are different. As a result, two I/O banks are needed to assign the VCCI and VREF voltages.
In addition, there are six single-ended I/Os used that have the same VCCI voltage. Since two banks
are already assigned with the same VCCI voltage and there are enough unused bonded I/Os in

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I/O Software Control in Low Power Flash Devices

those banks, the user does not need to assign the same VCCI voltage to another bank. The user needs
to assign the other three VCCI voltages to three more banks.

Assigning Technologies and VREF to I/O Banks

Low power flash devices offer a wide variety of I/O standards, including voltage-referenced standards.
Before proceeding to Layout, each bank must have the required VCCI voltage assigned for the
corresponding I/O technologies used for that bank. The voltage-referenced standards require the use of
a reference voltage (VREF). This assignment can be done manually or automatically. The following
sections describe this in detail.

Manually Assigning Technologies to I/O Banks

The user can import the PDC at this point and resolve this requirement. The PDC command is
set_iobank [bank name] –vcci [vcci value]

Another method is to use the I/O Bank Settings dialog box (MVN > Edit > I/O Bank Settings) to set up
the VCCI voltage for the bank (Figure 8-12).

Figure 8-12 • Setting VCCI for a Bank

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The procedure is as follows:

1. Select the bank to which you want VCCI to be assigned from the Choose Bank list.
2. Select the I/O standards for that bank. If you select any standard, the tool will automatically show
all compatible standards that have a common VCCI voltage requirement.
3. Click Apply.
4. Repeat steps 1–3 to assign VCCI voltages to other banks. Refer to Figure 8-11 on page 197 to
find out how many I/O banks are needed for VCCI bank assignment.

Manually Assigning VREF Pins

Voltage-referenced inputs require an input reference voltage (VREF). The user must assign VREF pins
before running Layout. Before assigning a VREF pin, the user must set a VREF technology for the bank
to which the pin belongs.

VREF Rules for the Implementation of Voltage-Referenced I/O

Standards
The VREF rules are as follows:
1. Any I/O (except JTAG I/Os) can be used as a VREF pin.
2. One VREF pin can support up to 15 I/Os. It is recommended, but not required, that eight of them
be on one side and seven on the other side (in other words, all 15 can still be on one side of
VREF).
3. SSTL3 (I) and (II): Up to 40 I/Os per north or south bank in any position
4. LVPECL / GTL+ 3.3 V / GTL 3.3 V: Up to 48 I/Os per north or south bank in any position (not
applicable for IGLOO nano and ProASIC3 nano devices)
5. SSTL2 (I) and (II) / GTL+ 2.5 V / GTL 2.5 V: Up to 72 I/Os per north or south bank in any position
6. VREF minibanks partition rule: Each I/O bank is physically partitioned into VREF minibanks. The
VREF pins within a VREF minibank are interconnected internally, and consequently, only one
VREF voltage can be used within each VREF minibank. If a bank does not require a VREF signal,
the VREF pins of that bank are available as user I/Os.
7. The first VREF minibank includes all I/Os starting from one end of the bank to the first power triple
and eight more I/Os after the power triple. Therefore, the first VREF minibank may contain (0 + 8),
(2 + 8), (4 + 8), (6 + 8), or (8 + 8) I/Os.
The second VREF minibank is adjacent to the first VREF minibank and contains eight I/Os, a
power triple, and eight more I/Os after the triple. An analogous rule applies to all other VREF
minibanks but the last.
The last VREF minibank is adjacent to the previous one but contains eight I/Os, a power triple,
and all I/Os left at the end of the bank. This bank may also contain (8 + 0), (8 + 2), (8 + 4), (8 + 6),
or (8 + 8) available I/Os.
Example:
4 I/Os → Triple → 8 I/Os, 8 I/Os → Triple → 8 I/Os, 8 I/Os → Triple → 2 I/Os
That is, minibank A = (4 + 8) I/Os, minibank B = (8 + 8) I/Os, minibank C = (8 + 2) I/Os.
8. Only minibanks that contain input or bidirectional I/Os require a VREF. A VREF is not needed for
minibanks composed of output or tristated I/Os.

Assigning the VREF Voltage to a Bank

When importing the PDC file, the VREF voltage can be assigned to the I/O bank. The PDC command is
as follows:
set_iobank –vref [value]

Another method for assigning VREF is by using MVN > Edit > I/O Bank Settings (Figure 8-13 on
page 200).

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VREF for GTL+ 3.3 V

Figure 8-13 • Selecting VREF Voltage for the I/O Bank

Assigning VREF Pins for a Bank

The user can use default pins for VREF. In this case, select the Use default pins for VREFs check box
(Figure 8-13). This option guarantees full VREF coverage of the bank. The equivalent PDC command is
as follows:
set_vref_default [bank name]

To be able to choose VREF pins, adequate VREF pins must be created to allow legal placement of the
compatible voltage-referenced I/Os.
To assign VREF pins manually, the PDC command is as follows:
set_vref –bank [bank name] [package pin numbers]

For ChipPlanner/PinEditor to show the range of a VREF pin, perform the following steps:
1. Assign VCCI to a bank using MVN > Edit > I/O Bank Settings.
2. Open ChipPlanner. Zoom in on an I/O package pin in that bank.
3. Highlight the pin and then right-click. Choose Use Pin for VREF.

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4. Right-click and then choose Highlight VREF range. All the pins covered by that VREF pin will be
highlighted (Figure 8-14).

Figure 8-14 • VREF Range

Using PinEditor or ChipPlanner, VREF pins can also be assigned (Figure 8-15).

Figure 8-15 • Assigning VREF from PinEditor

To unassign a VREF pin:

1. Select the pin to unassign.
2. Right-click and choose Use Pin for VREF. The check mark next to the command disappears. The
VREF pin is now a regular pin.
Resetting the pin may result in unassigning I/O cores, even if they are locked. In this case, a warning
message appears so you can cancel the operation.
After you assign the VREF pins, right-click a VREF pin and choose Highlight VREF Range to see how
many I/Os are covered by that pin. To unhighlight the range, choose Unhighlight All from the Edit
menu.

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Automatically Assigning Technologies to I/O Banks

The I/O Bank Assigner (IOBA) tool runs automatically when you run Layout. You can also use this tool
from within the MultiView Navigator (Figure 8-17). The IOBA tool automatically assigns technologies and
VREF pins (if required) to every I/O bank that does not currently have any technologies assigned to it.
This tool is available when at least one I/O bank is unassigned.
To automatically assign technologies to I/O banks, choose I/O Bank Assigner from the Tools menu (or
click the I/O Bank Assigner's toolbar button, shown in Figure 8-16).

Figure 8-16 • I/O Bank Assigner’s Toolbar Button

Messages will appear in the Output window informing you when the automatic I/O bank assignment
begins and ends. If the assignment is successful, the message "I/O Bank Assigner completed
successfully" appears in the Output window, as shown in Figure 8-17.

Figure 8-17 • I/O Bank Assigner Displays Messages in Output Window

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If the assignment is not successful, an error message appears in the Output window.
To undo the I/O bank assignments, choose Undo from the Edit menu. Undo removes the I/O
technologies assigned by the IOBA. It does not remove the I/O technologies previously assigned.
To redo the changes undone by the Undo command, choose Redo from the Edit menu.
To clear I/O bank assignments made before using the Undo command, manually unassign or reassign
I/O technologies to banks. To do so, choose I/O Bank Settings from the Edit menu to display the I/O
Bank Settings dialog box.

Conclusion
Fusion, IGLOO, and ProASIC3 support for multiple I/O standards minimizes board-level components and
makes possible a wide variety of applications. The Microsemi Designer software, integrated with Libero
SoC, presents a clear visual display of I/O assignments, allowing users to verify I/O and board-level
design requirements before programming the device. The device I/O features and functionalities ensure
board designers can produce low-cost and low power FPGA applications fulfilling the complexities of
contemporary design needs.

Related Documents

User’s Guides
Libero SoC User’s Guide
http://www.microsemi.com/soc/documents/libero_ug.pdf
IGLOO, ProASIC3, SmartFusion, and Fusion Macro Library Guide
http://www.microsemi.com/soc/documents/pa3_libguide_ug.pdf
SmartGen Core Reference Guide
http://www.microsemi.com/soc/documents/genguide_ug.pdf

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List of Changes
The following table lists critical changes that were made in each revision of the document.

Date Changes Page

August 2012 The notes in Table 8-2 • Designer State (resulting from I/O attribute modification) 187
were revised to clarify which device families support programmable input delay
(SAR 39666).
June 2011 Figure 8-2 • SmartGen Catalog was updated (SAR 24310). Figure 8-3 • Expanded 188
I/O Section and the step associated with it were deleted to reflect changes in the
software.
The following rule was added to the "VREF Rules for the Implementation of 199
Voltage-Referenced I/O Standards" section:
Only minibanks that contain input or bidirectional I/Os require a VREF. A VREF is
not needed for minibanks composed of output or tristated I/Os (SAR 24310).
July 2010 Notes were added where appropriate to point out that IGLOO nano and ProASIC3 N/A
nano devices do not support differential inputs (SAR 21449).
v1.4 IGLOO nano and ProASIC3 nano devices were added to Table 8-1 • Flash-Based 186
(December 2008) FPGAs.
The notes for Table 8-2 • Designer State (resulting from I/O attribute modification) 187
were revised to indicate that skew control and input delay do not apply to nano
devices.
v1.3 The "Flash FPGAs I/O Support" section was revised to include new families and 186
(October 2008) make the information more concise.
v1.2 The following changes were made to the family descriptions in Table 8-1 • Flash- 186
(June 2008) Based FPGAs:
• ProASIC3L was updated to include 1.5 V.
• The number of PLLs for ProASIC3E was changed from five to six.
v1.1 This document was previously part of the I/O Structures in IGLOO and ProASIC3 N/A
(March 2008) Devices document. The content was separated and made into a new document.
Table 8-2 • Designer State (resulting from I/O attribute modification) was updated 187
to include note 2 for IGLOO PLUS.

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Devices

Introduction
The I/Os in Fusion, IGLOO, and ProASIC3 devices support Double Data Rate (DDR) mode. In this mode,
new data is present on every transition (or clock edge) of the clock signal. This mode doubles the data
transfer rate compared with Single Data Rate (SDR) mode, where new data is present on one transition
(or clock edge) of the clock signal. Low power flash devices have DDR circuitry built into the I/O tiles.
I/Os are configured to be DDR receivers or transmitters by instantiating the appropriate special macros
(examples shown in Figure 9-4 on page 210 and Figure 9-5 on page 211) and buffers (DDR_OUT or
DDR_REG) in the RTL design. This document discusses the options the user can choose to configure
the I/Os in this mode and how to instantiate them in the design.

Double Data Rate (DDR) Architecture

Low power flash devices support 350 MHz DDR inputs and outputs. In DDR mode, new data is present
on every transition of the clock signal. Clock and data lines have identical bandwidths and signal integrity
requirements, making them very efficient for implementing very high-speed systems. High-speed DDR
interfaces can be implemented using LVDS (not applicable for IGLOO nano and ProASIC3 nano
devices). In IGLOOe, ProASIC3E, AFS600, and AFS1500 devices, DDR interfaces can also be
implemented using the HSTL, SSTL, and LVPECL I/O standards. The DDR feature is primarily
implemented in the FPGA core periphery and is not tied to a specific I/O technology or limited to any I/O
standard.

INBUF_SSTL2_I DDR_REG DDR_OUT OUTBUF_SSTL3_I

DataR D PAD
PAD Y
PAD D QR DR Q
DF
DataF
CLK QF
CLR CLR

CLR

Figure 9-1 • DDR Support in Low Power Flash Devices

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DDR for Microsemi’s Low Power Flash Devices

DDR Support in Flash-Based Devices

The flash FPGAs listed in Table 9-1 support the DDR feature and the functions described in this
document.
Table 9-1 • Flash-Based FPGAs
Series Family* Description
IGLOO IGLOO Ultra-low power 1.2 V to 1.5 V FPGAs with Flash*Freeze technology
IGLOOe Higher density IGLOO FPGAs with six PLLs and additional I/O standards
IGLOO nano The industry’s lowest-power, smallest-size solution
ProASIC3 ProASIC3 Low power, high-performance 1.5 V FPGAs
ProASIC3E Higher density ProASIC3 FPGAs with six PLLs and additional I/O standards
ProASIC3 nano Lowest-cost solution with enhanced I/O capabilities
ProASIC3L ProASIC3 FPGAs supporting 1.2 V to 1.5 V with Flash*Freeze technology
RT ProASIC3 Radiation-tolerant RT3PE600L and RT3PE3000L
Military ProASIC3/EL Military temperature A3PE600L, A3P1000, and A3PE3000L
Automotive ProASIC3 ProASIC3 FPGAs qualified for automotive applications
Fusion Fusion Mixed signal FPGA integrating ProASIC3 FPGA fabric, programmable
analog block, support for ARM® Cortex™-M1 soft processors, and flash
memory into a monolithic device
Note: *The device names link to the appropriate datasheet, including product brief, DC and switching characteristics,
and packaging information.

IGLOO Terminology
In documentation, the terms IGLOO series and IGLOO devices refer to all of the IGLOO devices as listed
in Table 9-1. Where the information applies to only one product line or limited devices, these exclusions
will be explicitly stated.

ProASIC3 Terminology
In documentation, the terms ProASIC3 series and ProASIC3 devices refer to all of the ProASIC3 devices
as listed in Table 9-1. Where the information applies to only one product line or limited devices, these
exclusions will be explicitly stated.
To further understand the differences between the IGLOO and ProASIC3 devices, refer to the Industry’s
Lowest Power FPGAs Portfolio.

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I/O Cell Architecture

Low power flash devices support DDR in the I/O cells in four different modes: Input, Output, Tristate, and
Bidirectional pins. For each mode, different I/O standards are supported, with most I/O standards having
special sub-options. For the ProASIC3 nano and IGLOO nano devices, DDR is supported only in the
60 k, 125 k, and 250 k logic densities. Refer to Table 9-2 for a sample of the available I/O options.
Additional I/O options can be found in the relevant family datasheet.
Table 9-2 • DDR I/O Options
DDR Register
Type I/O Type I/O Standard Sub-Options Comments
Receive Register Input Normal None 3.3 V TTL (default)
LVCMOS Voltage 1.5 V, 1.8 V, 2.5 V, 5 V (1.5 V
default)
Pull-Up None (default)
PCI/PCI-X None
GTL/GTL+ Voltage 2.5 V, 3.3 V (3.3 V default)
HSTL Class I / II (I default)
SSTL2/SSTL3 Class I / II (I default)
LVPECL None
LVDS None
Transmit Register Output Normal None 3.3 V TTL (default)
LVTTL Output Drive 2, 4, 6, 8, 12, 16, 24, 36 mA (8 mA
default)
Slew Rate Low/high (high default)
LVCMOS Voltage 1.5 V, 1.8 V, 2.5 V, 5 V (1.5 V
default)
PCI/PCI-X None
GTL/GTL+ Voltage 1.8 V, 2.5 V, 3.3 V (3.3 V default)
HSTL Class I / II (I default)
SSTL2/SSTL3 Class I / II (I default)
LVPECL* None
LVDS* None
Note: *IGLOO nano and ProASIC3 nano devices do not support differential inputs.

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Table 9-2 • DDR I/O Options (continued)

DDR Register
Type I/O Type I/O Standard Sub-Options Comments
Transmit Register Tristate Normal Enable Polarity Low/high (low default)
(continued) Buffer
LVTTL Output Drive 2, 4, 6, 8, 12,16, 24, 36 mA (8 mA
default)
Slew Rate Low/high (high default)
Enable Polarity Low/high (low default)
Pull-Up/-Down None (default)
LVCMOS Voltage 1.5 V, 1.8 V, 2.5 V, 5 V (1.5 V
default)
Output Drive 2, 4, 6, 8, 12, 16, 24, 36 mA (8 mA
default)
Slew Rate Low/high (high default)
Enable Polarity Low/high (low default)
Pull-Up/-Down None (default)
PCI/PCI-X Enable Polarity Low/high (low default)
GTL/GTL+ Voltage 1.8 V, 2.5 V, 3.3 V (3.3 V default)
Enable Polarity Low/high (low default)
HSTL Class I / II (I default)
Enable Polarity Low/high (low default)
SSTL2/SSTL3 Class I / II (I default)
Enable Polarity Low/high (low default)
Bidirectional Normal Enable Polarity Low/high (low default)
Buffer
LVTTL Output Drive 2, 4, 6, 8, 12, 16, 24, 36 mA (8 mA
default)
Slew Rate Low/high (high default)
Enable Polarity Low/high (low default)
Pull-Up/-Down None (default)
LVCMOS Voltage 1.5 V, 1.8 V, 2.5 V, 5V (1.5 V
default)
Enable Polarity Low/high (low default)
Pull-Up None (default)
PCI/PCI-X None
Enable Polarity Low/high (low default)
GTL/GTL+ Voltage 1.8 V, 2.5 V, 3.3 V (3.3 V default)
Enable Polarity Low/high (low default)
HSTL Class I / II (I default)
Enable Polarity Low/high (low default)
SSTL2/SSTL3 Class I / II (I default)
Enable Polarity Low/high (low default)
Note: *IGLOO nano and ProASIC3 nano devices do not support differential inputs.

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Input Support for DDR

The basic structure to support a DDR input is shown in Figure 9-2. Three input registers are used to
capture incoming data, which is presented to the core on each rising edge of the I/O register clock. Each
I/O tile supports DDR inputs.

INBUF_SSTL2_I DDR_REG
PAD Y
PAD D QR QR

CLK QF QF
CLR
CLR

Figure 9-2 • DDR Input Register Support in Low Power Flash Devices

Output Support for DDR

The basic DDR output structure is shown in Figure 9-1 on page 205. New data is presented to the output
every half clock cycle.
Note: DDR macros and I/O registers do not require additional routing. The combiner automatically
recognizes the DDR macro and pushes its registers to the I/O register area at the edge of the chip.
The routing delay from the I/O registers to the I/O buffers is already taken into account in the DDR
macro.

OUTBUF_SSTL3_I
DDR_OUT
D PAD
DataR DR Q
DataF DF

CLK
CLR
CLR

Figure 9-3 • DDR Output Register (SSTL3 Class I)

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Instantiating DDR Registers

Using SmartGen is the simplest way to generate the appropriate RTL files for use in the design.
Figure 9-4 shows an example of using SmartGen to generate a DDR SSTL2 Class I input register.
SmartGen provides the capability to generate all of the DDR I/O cells as described. The user, through the
graphical user interface, can select from among the many supported I/O standards. The output formats
supported are Verilog, VHDL, and EDIF.
Figure 9-5 on page 211 through Figure 9-8 on page 214 show the I/O cell configured for DDR using
SSTL2 Class I technology. For each I/O standard, the I/O pad is buffered by a special primitive that
indicates the I/O standard type.

Figure 9-4 • Example of Using SmartGen to Generate a DDR SSTL2 Class I Input Register

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DDR Input Register

INBUF_SSTL2_I DDR_REG
PAD Y
PAD D QR QR

CLK QF QF
CLR
CLR

Figure 9-5 • DDR Input Register (SSTL2 Class I)

The corresponding structural representations, as generated by SmartGen, are shown below:

Verilog
module DDR_InBuf_SSTL2_I(PAD,CLR,CLK,QR,QF);

input PAD, CLR, CLK;

output QR, QF;

wire Y;

INBUF_SSTL2_I INBUF_SSTL2_I_0_inst(.PAD(PAD),.Y(Y));
DDR_REG DDR_REG_0_inst(.D(Y),.CLK(CLK),.CLR(CLR),.QR(QR),.QF(QF));

endmodule

VHDL
library ieee;
use ieee.std_logic_1164.all;
--The correct library will be inserted automatically by SmartGen
library proasic3; use proasic3.all;
--library fusion; use fusion.all;
--library igloo; use igloo.all;

entity DDR_InBuf_SSTL2_I is
port(PAD, CLR, CLK : in std_logic; QR, QF : out std_logic) ;
end DDR_InBuf_SSTL2_I;

architecture DEF_ARCH of DDR_InBuf_SSTL2_I is

component INBUF_SSTL2_I
port(PAD : in std_logic := 'U'; Y : out std_logic) ;
end component;

component DDR_REG
port(D, CLK, CLR : in std_logic := 'U'; QR, QF : out std_logic) ;
end component;

signal Y : std_logic ;

begin

INBUF_SSTL2_I_0_inst : INBUF_SSTL2_I
port map(PAD => PAD, Y => Y);
DDR_REG_0_inst : DDR_REG
port map(D => Y, CLK => CLK, CLR => CLR, QR => QR, QF => QF);

end DEF_ARCH;

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DDR Output Register

OUTBUF_SSTL3_I
DDR_OUT
D PAD
DataR DR Q
DataF DF

CLK
CLR
CLR

Figure 9-6 • DDR Output Register (SSTL3 Class I)

Verilog
module DDR_OutBuf_SSTL3_I(DataR,DataF,CLR,CLK,PAD);

input DataR, DataF, CLR, CLK;

output PAD;

wire Q, VCC;

VCC VCC_1_net(.Y(VCC));
DDR_OUT DDR_OUT_0_inst(.DR(DataR),.DF(DataF),.CLK(CLK),.CLR(CLR),.Q(Q));
OUTBUF_SSTL3_I OUTBUF_SSTL3_I_0_inst(.D(Q),.PAD(PAD));

endmodule

VHDL
library ieee;
use ieee.std_logic_1164.all;
library proasic3; use proasic3.all;

entity DDR_OutBuf_SSTL3_I is
port(DataR, DataF, CLR, CLK : in std_logic; PAD : out std_logic) ;
end DDR_OutBuf_SSTL3_I;

architecture DEF_ARCH of DDR_OutBuf_SSTL3_I is

component DDR_OUT
port(DR, DF, CLK, CLR : in std_logic := 'U'; Q : out std_logic) ;
end component;

component OUTBUF_SSTL3_I
port(D : in std_logic := 'U'; PAD : out std_logic) ;
end component;

component VCC
port( Y : out std_logic);
end component;

signal Q, VCC_1_net : std_logic ;

begin

VCC_2_net : VCC port map(Y => VCC_1_net);

DDR_OUT_0_inst : DDR_OUT
port map(DR => DataR, DF => DataF, CLK => CLK, CLR => CLR, Q => Q);
OUTBUF_SSTL3_I_0_inst : OUTBUF_SSTL3_I
port map(D => Q, PAD => PAD);

end DEF_ARCH;

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DDR Tristate Output Register

INV
A Y

TrienAux
Trien

DDR_OUT
D PAD
DataR DR Q
DataF DF
TRIBUFF_F_8U
CLK
CLR
CLR

Figure 9-7 • DDR Tristate Output Register, LOW Enable, 8 mA, Pull-Up (LVTTL)

Verilog
module DDR_TriStateBuf_LVTTL_8mA_HighSlew_LowEnb_PullUp(DataR, DataF, CLR, CLK, Trien,
PAD);

input DataR, DataF, CLR, CLK, Trien;

output PAD;

wire TrienAux, Q;

INV Inv_Tri(.A(Trien),.Y(TrienAux));
DDR_OUT DDR_OUT_0_inst(.DR(DataR),.DF(DataF),.CLK(CLK),.CLR(CLR),.Q(Q));
TRIBUFF_F_8U TRIBUFF_F_8U_0_inst(.D(Q),.E(TrienAux),.PAD(PAD));

endmodule

VHDL
library ieee;
use ieee.std_logic_1164.all;
library proasic3; use proasic3.all;

entity DDR_TriStateBuf_LVTTL_8mA_HighSlew_LowEnb_PullUp is
port(DataR, DataF, CLR, CLK, Trien : in std_logic; PAD : out std_logic) ;
end DDR_TriStateBuf_LVTTL_8mA_HighSlew_LowEnb_PullUp;

architecture DEF_ARCH of DDR_TriStateBuf_LVTTL_8mA_HighSlew_LowEnb_PullUp is

component INV
port(A : in std_logic := 'U'; Y : out std_logic) ;
end component;

component DDR_OUT
port(DR, DF, CLK, CLR : in std_logic := 'U'; Q : out std_logic) ;
end component;

component TRIBUFF_F_8U
port(D, E : in std_logic := 'U'; PAD : out std_logic) ;
end component;

signal TrienAux, Q : std_logic ;

begin

Inv_Tri : INV
port map(A => Trien, Y => TrienAux);

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DDR_OUT_0_inst : DDR_OUT
port map(DR => DataR, DF => DataF, CLK => CLK, CLR => CLR, Q => Q);
TRIBUFF_F_8U_0_inst : TRIBUFF_F_8U
port map(D => Q, E => TrienAux, PAD => PAD);

end DEF_ARCH;

DDR Bidirectional Buffer

INV
A Y
Trien

DDR_OUT E
D PAD
DataR DR Q
DataF DF

CLK
BIBUF_HSTL_I
CLR
CLR
DDR_REG
QR Y
QR D

QF
QF
CLR

Figure 9-8 • DDR Bidirectional Buffer, LOW Output Enable (HSTL Class II)

Verilog
module DDR_BiDir_HSTL_I_LowEnb(DataR,DataF,CLR,CLK,Trien,QR,QF,PAD);

input DataR, DataF, CLR, CLK, Trien;

output QR, QF;
inout PAD;

wire TrienAux, D, Q;

INV Inv_Tri(.A(Trien), .Y(TrienAux));

DDR_OUT DDR_OUT_0_inst(.DR(DataR),.DF(DataF),.CLK(CLK),.CLR(CLR),.Q(Q));
DDR_REG DDR_REG_0_inst(.D(D),.CLK(CLK),.CLR(CLR),.QR(QR),.QF(QF));
BIBUF_HSTL_I BIBUF_HSTL_I_0_inst(.PAD(PAD),.D(Q),.E(TrienAux),.Y(D));

endmodule

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VHDL
library ieee;
use ieee.std_logic_1164.all;
library proasic3; use proasic3.all;

entity DDR_BiDir_HSTL_I_LowEnb is
port(DataR, DataF, CLR, CLK, Trien : in std_logic; QR, QF : out std_logic;
PAD : inout std_logic) ;
end DDR_BiDir_HSTL_I_LowEnb;

architecture DEF_ARCH of DDR_BiDir_HSTL_I_LowEnb is

component INV
port(A : in std_logic := 'U'; Y : out std_logic) ;
end component;

component DDR_OUT
port(DR, DF, CLK, CLR : in std_logic := 'U'; Q : out std_logic) ;
end component;

component DDR_REG
port(D, CLK, CLR : in std_logic := 'U'; QR, QF : out std_logic) ;
end component;

component BIBUF_HSTL_I
port(PAD : inout std_logic := 'U'; D, E : in std_logic := 'U'; Y : out std_logic) ;
end component;

signal TrienAux, D, Q : std_logic ;

begin

Inv_Tri : INV
port map(A => Trien, Y => TrienAux);
DDR_OUT_0_inst : DDR_OUT
port map(DR => DataR, DF => DataF, CLK => CLK, CLR => CLR, Q => Q);
DDR_REG_0_inst : DDR_REG
port map(D => D, CLK => CLK, CLR => CLR, QR => QR, QF => QF);
BIBUF_HSTL_I_0_inst : BIBUF_HSTL_I
port map(PAD => PAD, D => Q, E => TrienAux, Y => D);

end DEF_ARCH;

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Design Example
Figure 9-9 shows a simple example of a design using both DDR input and DDR output registers. The
user can copy the HDL code in Libero SoC software and go through the design flow. Figure 9-10 and
Figure 9-11 on page 217 show the netlist and ChipPlanner views of the ddr_test design. Diagrams may
vary slightly for different families.

INBUF_SSTL2_I DDR_REG DDR_OUT OUTBUF_SSTL3_I

DataR D PAD
PAD Y
PAD D QR DR Q
DF
DataF
CLK QF
CLR CLR

CLR

Figure 9-9 • Design Example

Figure 9-10 • DDR Test Design as Seen by NetlistViewer for IGLOO/e Devices

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Figure 9-11 • DDR Input/Output Cells as Seen by ChipPlanner for IGLOO/e Devices

Verilog
module Inbuf_ddr(PAD,CLR,CLK,QR,QF);

input PAD, CLR, CLK;

output QR, QF;

wire Y;

DDR_REG DDR_REG_0_inst(.D(Y), .CLK(CLK), .CLR(CLR), .QR(QR), .QF(QF));

INBUF INBUF_0_inst(.PAD(PAD), .Y(Y));

endmodule

module Outbuf_ddr(DataR,DataF,CLR,CLK,PAD);

input DataR, DataF, CLR, CLK;

output PAD;

wire Q, VCC;

VCC VCC_1_net(.Y(VCC));
DDR_OUT DDR_OUT_0_inst(.DR(DataR), .DF(DataF), .CLK(CLK), .CLR(CLR), .Q(Q));
OUTBUF OUTBUF_0_inst(.D(Q), .PAD(PAD));

endmodule

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DDR for Microsemi’s Low Power Flash Devices

module ddr_test(DIN, CLK, CLR, DOUT);

input DIN, CLK, CLR;

output DOUT;

Inbuf_ddr Inbuf_ddr (.PAD(DIN), .CLR(clr), .CLK(clk), .QR(qr), .QF(qf));

Outbuf_ddr Outbuf_ddr (.DataR(qr),.DataF(qf), .CLR(clr), .CLK(clk),.PAD(DOUT));

INBUF INBUF_CLR (.PAD(CLR), .Y(clr));

INBUF INBUF_CLK (.PAD(CLK), .Y(clk));

endmodule

Simulation Consideration
Microsemi DDR simulation models use inertial delay modeling by default (versus transport delay
modeling). As such, pulses that are shorter than the actual gate delays should be avoided, as they will
not be seen by the simulator and may be an issue in post-routed simulations. The user must be aware of
the default delay modeling and must set the correct delay model in the simulator as needed.

Conclusion
Fusion, IGLOO, and ProASIC3 devices support a wide range of DDR applications with different I/O
standards and include built-in DDR macros. The powerful capabilities provided by SmartGen and its GUI
can simplify the process of including DDR macros in designs and minimize design errors. Additional
considerations should be taken into account by the designer in design floorplanning and placement of I/O
flip-flops to minimize datapath skew and to help improve system timing margins. Other system-related
issues to consider include PLL and clock partitioning.

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List of Changes
The following table lists critical changes that were made in each revision of the chapter.

Date Changes Page

July 2010 This chapter is no longer published separately with its own part number and version N/A
but is now part of several FPGA fabric user’s guides.
Notes were added where appropriate to point out that IGLOO nano and ProASIC3 N/A
nano devices do not support differential inputs (SAR 21449).
v1.4 IGLOO nano and ProASIC3 nano devices were added to Table 9-1 • Flash-Based 206
(December 2008) FPGAs.
The "I/O Cell Architecture" section was updated with information applicable to nano 207
devices.
The output buffer (OUTBUF_SSTL3_I) input was changed to D, instead of Q, in 205,
Figure 9-1 • DDR Support in Low Power Flash Devices, Figure 9-3 • DDR Output 209,
Register (SSTL3 Class I), Figure 9-6 • DDR Output Register (SSTL3 Class I), 212, 213
Figure 9-7 • DDR Tristate Output Register, LOW Enable, 8 mA, Pull-Up (LVTTL), and
the output from the DDR_OUT macro was connected to the input of the TRIBUFF
macro in Figure 9-7 • DDR Tristate Output Register, LOW Enable, 8 mA, Pull-Up
(LVTTL).
v1.3 The "Double Data Rate (DDR) Architecture" section was updated to include mention 205
(October 2008) of the AFS600 and AFS1500 devices.
The "DDR Support in Flash-Based Devices" section was revised to include new 206
families and make the information more concise.
v1.2 The following changes were made to the family descriptions in Table 9-1 • Flash- 206
(June 2008) Based FPGAs:
• ProASIC3L was updated to include 1.5 V.
• The number of PLLs for ProASIC3E was changed from five to six.
v1.1 The "IGLOO Terminology" section and "ProASIC3 Terminology" section are new. 206
(March 2008)

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10 – Programming Flash Devices

Introduction
This document provides an overview of the various programming options available for the Microsemi
flash families. The electronic version of this document includes active links to all programming resources,
which are available at http://www.microsemi.com/soc/products/hardware/default.aspx. For Microsemi
antifuse devices, refer to the Programming Antifuse Devices document.

Summary of Programming Support

FlashPro4 and FlashPro3 are high-performance in-system programming (ISP) tools targeted at the latest
generation of low power flash devices offered by the SmartFusion,® Fusion, IGLOO,® and ProASIC®3
families, including ARM-enabled devices. FlashPro4 and FlashPro3 offer extremely high performance
through the use of USB 2.0, are high-speed compliant for full use of the 480 Mbps bandwidth, and can
program ProASIC3 devices in under 30 seconds. Powered exclusively via USB, FlashPro4 and
FlashPro3 provide a VPUMP voltage of 3.3 V for programming these devices.
FlashPro4 replaced FlashPro3 in 2010. FlashPro4 supports SmartFusion, Fusion, ProASIC3,and IGLOO
devices as well as future generation flash devices. FlashPro4 also adds 1.2 V programming for IGLOO
nano V2 devices. FlashPro4 is compatible with FlashPro3; however it adds a programming mode
(PROG_MODE) signal to the previously unused pin 4 of the JTAG connector. The PROG_MODE goes
high during programming and can be used to turn on a 1.5 V external supply for those devices that
require 1.5 V for programming. If both FlashPro3 and FlashPro4 programmers are used for programming
the same boards, pin 4 of the JTAG connector must not be connected to anything on the board because
FlashPro4 uses pin 4 for PROG_MODE.

FlashPro3 or JTAG
FlashPro ProASIC3/E
Software FlashPro4

Programming File:
PDB, STP, or FDB

Figure 10-1 • FlashPro Programming Setup

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Programming Support in Flash Devices

The flash FPGAs listed in Table 10-1 support flash in-system programming and the functions described
in this document.
Table 10-1 • Flash-Based FPGAs
Series Family* Description
IGLOO IGLOO Ultra-low power 1.2 V to 1.5 V FPGAs with Flash*Freeze technology
IGLOOe Higher density IGLOO FPGAs with six PLLs and additional I/O standards
IGLOO nano The industry’s lowest-power, smallest-size solution, supporting 1.2 V to 1.5 V
core voltage with Flash*Freeze technology
IGLOO PLUS IGLOO FPGAs with enhanced I/O capabilities
ProASIC3 ProASIC3 Low power, high-performance 1.5 V FPGAs
ProASIC3E Higher density ProASIC3 FPGAs with six PLLs and additional I/O standards
ProASIC3 nano Lowest-cost solution with enhanced I/O capabilities
ProASIC3L ProASIC3 FPGAs supporting 1.2 V to 1.5 V core voltage with Flash*Freeze
technology
RT ProASIC3 Radiation-tolerant RT3PE600L and RT3PE3000L
Military ProASIC3/EL Military temperature A3PE600L, A3P1000, and A3PE3000L
Automotive ProASIC3 ProASIC3 FPGAs qualified for automotive applications
SmartFusion SmartFusion Mixed-signal FPGA integrating FPGA fabric, programmable microcontroller
subsystem (MSS), including programmable analog and ARM® Cortex™-M3
hard processor and flash memory in a monolithic device
Fusion Fusion Mixed signal FPGA integrating ProASIC3 FPGA fabric, programmable
analog block, support for ARM® Cortex™-M1 soft processors, and flash
memory into a monolithic device
ProASIC ProASIC First generation ProASIC devices
ProASICPLUS Second generation ProASIC devices
Note: *The device names link to the appropriate datasheet, including product brief, DC and switching characteristics,
and packaging information.

IGLOO Terminology
In documentation, the terms IGLOO series and IGLOO devices refer to all of the IGLOO devices as listed
in Table 10-1. Where the information applies to only one product line or limited devices, these exclusions
will be explicitly stated.

ProASIC3 Terminology
In documentation, the terms ProASIC3 series and ProASIC3 devices refer to all of the ProASIC3 devices
as listed in Table 10-1. Where the information applies to only one product line or limited devices, these
exclusions will be explicitly stated.
To further understand the differences between the IGLOO and ProASIC3 devices, refer to the Industry’s
Lowest Power FPGAs Portfolio.

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General Flash Programming Information

Programming Basics
When choosing a programming solution, there are a number of options available. This section provides a
brief overview of those options. The next sections provide more detail on those options as they apply to
Microsemi FPGAs.

Reprogrammable or One-Time-Programmable (OTP)

Depending on the technology chosen, devices may be reprogrammable or one-time-programmable. As
the name implies, a reprogrammable device can be programmed many times. Generally, the contents of
such a device will be completely overwritten when it is reprogrammed. All Microsemi flash devices are
reprogrammable.
An OTP device is programmable one time only. Once programmed, no more changes can be made to
the contents. Microsemi flash devices provide the option of disabling the reprogrammability for security
purposes. This combines the convenience of reprogrammability during design verification with the
security of an OTP technology for highly sensitive designs.

Device Programmer or In-System Programming

There are two fundamental ways to program an FPGA: using a device programmer or, if the technology
permits, using in-system programming. A device programmer is a piece of equipment in a lab or on the
production floor that is used for programming FPGA devices. The devices are placed into a socket
mounted in a programming adapter module, and the appropriate electrical interface is applied. The
programmed device can then be placed on the board. A typical programmer, used during development,
programs a single device at a time and is referred to as a single-site engineering programmer.
With ISP, the device is already mounted onto the system printed circuit board when programming occurs.
Typically, ISD programming is performed via a JTAG interface on the FPGA. The JTAG pins can be
controlled either by an on-board resource, such as a microprocessor, or by an off-board programmer
through a header connection. Once mounted, it can be programmed repeatedly and erased. If the
application requires it, the system can be designed to reprogram itself using a microprocessor, without
the use of any external programmer.
If multiple devices need to be programmed with the same program, various multi-site programming
hardware is available in order to program many devices in parallel. Microsemi In House Programming is
also available for this purpose.

Programming Features for Microsemi Devices

Flash Devices
The flash devices supplied by Microsemi are reprogrammable by either a generic device programmer or
ISP. Microsemi supports ISP using JTAG, which is supported by the FlashPro4 and FlashPro3, FlashPro
Lite, Silicon Sculptor 3, and Silicon Sculptor II programmers.
Levels of ISP support vary depending on the device chosen:
• All SmartFusion, Fusion, IGLOO, and ProASIC3 devices support ISP.
• IGLOO, IGLOOe, IGLOO nano V5, and IGLOO PLUS devices can be programmed in-system
when the device is using a 1.5 V supply voltage to the FPGA core.
• IGLOO nano V2 devices can be programmed at 1.2 V core voltage (when using FlashPro4 only)
or 1.5 V. IGLOO nano V5 devices are programmed with a VCC core voltage of 1.5 V.

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Programming Flash Devices

Types of Programming for Flash Devices

The number of devices to be programmed will influence the optimal programming methodology. Those
available are listed below:
• In-system programming
– Using a programmer
– Using a microprocessor or microcontroller
• Device programmers
– Single-site programmers
– Multi-site programmers, batch programmers, or gang programmers
– Automated production (robotic) programmers
• Volume programming services
– Microsemi in-house programming
– Programming centers

In-System Programming
Device Type Supported: Flash
ISP refers to programming the FPGA after it has been mounted on the system printed circuit board. The
FPGA may be preprogrammed and later reprogrammed using ISP.
The advantage of using ISP is the ability to update the FPGA design many times without any changes to
the board. This eliminates the requirement of using a socket for the FPGA, saving cost and improving
reliability. It also reduces programming hardware expenses, as the ISP methodology is die-/package-
independent.
There are two methods of in-system programming: external and internal.
• Programmer ISP—Refer to the "In-System Programming (ISP) of Microsemi’s Low Power Flash
Devices Using FlashPro4/3/3X" section on page 261 for more information.
Using an external programmer and a cable, the device can be programmed through a header on
the system board. In Microsemi SoC Products Group documentation, this is referred to as
external ISP. Microsemi provides FlashPro4, FlashPro3, FlashPro Lite, or Silicon Sculptor 3 to
perform external ISP. Note that Silicon Sculptor II and Silicon Sculptor 3 can only provide ISP for
ProASIC and ProASICPLUS® families, not for SmartFusion, Fusion, IGLOO, or ProASIC3. Silicon
Sculptor II and Silicon Sculptor 3 can be used for programming ProASIC and ProASICPLUS
devices by using an adapter module (part number SMPA-ISP-ACTEL-3).
– Advantages: Allows local control of programming and data files for maximum security. The
programming algorithms and hardware are available from Microsemi. The only hardware
required on the board is a programming header.
– Limitations: A negligible board space requirement for the programming header and JTAG
signal routing
• Microprocessor ISP—Refer to the "Microprocessor Programming of Microsemi’s Low Power
Flash Devices" chapter of an appropriate FPGA fabric user’s guide for more information.
Using a microprocessor and an external or internal memory, you can store the program in
memory and use the microprocessor to perform the programming. In Microsemi documentation,
this is referred to as internal ISP. Both the code for the programming algorithm and the FPGA
programming file must be stored in memory on the board. Programming voltages must also be
generated on the board.
– Advantages: The programming code is stored in the system memory. An external programmer
is not required during programming.
– Limitations: This is the approach that requires the most design work, since some way of
getting and/or storing the data is needed; a system interface to the device must be designed;
and the low-level API to the programming firmware must be written and linked into the code
provided by Microsemi. While there are benefits to this methodology, serious thought and
planning should go into the decision.

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Device Programmers
Single Device Programmer
Single device programmers are used to program a device before it is mounted on the system board.
The advantage of using device programmers is that no programming hardware is required on the system
board. Therefore, no additional components or board space are required.
Adapter modules are purchased with single device programmers to support the FPGA packages used.
The FPGA is placed in the adapter module and the programming software is run from a PC. Microsemi
supplies the programming software for all of the Microsemi programmers. The software allows for the
selection of the correct die/package and programming files. It will then program and verify the device.
• Single-site programmers
A single-site programmer programs one device at a time. Microsemi offers Silicon Sculptor 3, built
by BP Microsystems, as a single-site programmer. Silicon Sculptor 3 and associated software are
available only from Microsemi.
– Advantages: Lower cost than multi-site programmers. No additional overhead for
programming on the system board. Allows local control of programming and data files for
maximum security. Allows on-demand programming on-site.
– Limitations: Only programs one device at a time.
• Multi-site programmers
Often referred to as batch or gang programmers, multi-site programmers can program multiple devices at
the same time using the same programming file. This is often used for large volume programming and by
programming houses. The sites often have independent processors and memory enabling the sites to
operate concurrently, meaning each site may start programming the same file independently. This
enables the operator to change one device while the other sites continue programming, which increases
throughput. Multiple adapter modules for the same package are required when using a multi-site
programmer. Silicon Sculptor I, II, and 3 programmers can be cascaded to program multiple devices in a
chain. Multi-site programmers, such as the BP2610 and BP2710, can also be purchased from BP
Microsystems. When using BP Microsystems multi-site programmers, users must use programming
adapter modules available only from Microsemi. Visit the Microsemi SoC Products Group website to view
the part numbers of the desired adapter module:
http://www.microsemi.com/soc/products/hardware/program_debug/ss/modules.aspx.
Also when using BP Microsystems programmers, customers must use Microsemi
programming software to ensure the best programming result will occur.
– Advantages: Provides the capability of programming multiple devices at the same time. No
additional overhead for programming on the system board. Allows local control of
programming and data files for maximum security.
– Limitations: More expensive than a single-site programmer
• Automated production (robotic) programmers
Automated production programmers are based on multi-site programmers. They consist of a large input
tray holding multiple parts and a robotic arm to select and place parts into appropriate programming
sockets automatically. When the programming of the parts is complete, the parts are removed and
placed in a finished tray. The automated programmers are often used in volume programming houses to
program parts for which the programming time is small. BP Microsystems part number BP4710, BP4610,
BP3710 MK2, and BP3610 are available for this purpose. Auto programmers cannot be used to program
RTAX-S devices.
Where an auto-programmer is used, the appropriate open-top adapter module from BP Microsystems
must be used.

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Volume Programming Services

Device Type Supported: Flash and Antifuse
Once the design is stable for applications with large production volumes, preprogrammed devices can be
purchased. Table 10-2 describes the volume programming services.

Table 10-2 • Volume Programming Services

Programmer Vendor Availability
In-House Programming Microsemi Contact Microsemi Sales
Distributor Programming Centers Memec Unique Contact Distribution
Independent Programming Centers Various Contact Vendor

Advantages: As programming is outsourced, this solution is easier to implement than creating a

substantial in-house programming capability. As programming houses specialize in large-volume
programming, this is often the most cost-effective solution.
Limitations: There are some logistical issues with the use of a programming service provider, such as the
transfer of programming files and the approval of First Articles. By definition, the programming file must
be released to a third-party programming house. Nondisclosure agreements (NDAs) can be signed to
help ensure data protection; however, for extremely security-conscious designs, this may not be an
option.
• Microsemi In-House Programming
When purchasing Microsemi devices in volume, IHP can be requested as part of the purchase. If
this option is chosen, there is a small cost adder for each device programmed. Each device is
marked with a special mark to distinguish it from blank parts. Programming files for the design will
be sent to Microsemi. Sample parts with the design programmed, First Articles, will be returned
for customer approval. Once approval of First Articles has been received, Microsemi will proceed
with programming the remainder of the order. To request Microsemi IHP, contact your local
Microsemi representative.
• Distributor Programming Centers
If purchases are made through a distributor, many distributors will provide programming for their
customers. Consult with your preferred distributor about this option.

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Programming Solutions
Details for the available programmers can be found in the programmer user's guides listed in the
"Related Documents" section on page 231.
All the programmers except FlashPro4, FlashPro3, FlashPro Lite, and FlashPro require adapter
modules, which are designed to support device packages. All modules are listed on the Microsemi SoC
Products Group website at
http://www.microsemi.com/soc/products/hardware/program_debug/ss/modules.aspx. They are not listed
in this document, since this list is updated frequently with new package options and any upgrades
required to improve programming yield or support new families.

Table 10-3 • Programming Solutions

Single
Programmer Vendor ISP Device Multi-Device Availability
1
FlashPro4 Microsemi Only Yes Yes Available
FlashPro3 Microsemi Only Yes Yes1 Available
FlashPro Lite2 Microsemi Only Yes Yes1 Available
FlashPro Microsemi Only Yes Yes1 Discontinued
Silicon Sculptor 3 Microsemi Yes3 Yes Cascade option Available
(up to two)
Silicon Sculptor II Microsemi Yes3 Yes Cascade option Available
(up to two)
Silicon Sculptor Microsemi Yes Yes Cascade option Discontinued
(up to four)
Sculptor 6X Microsemi No Yes Yes Discontinued
BP MicroProgrammers BP No Yes Yes Contact BP
Microsystems Microsystems at
www.bpmicro.com
Notes:
1. Multiple devices can be connected in the same JTAG chain for programming.
2. If FlashPro Lite is used for programming, the programmer derives all of its power from the target pc
board's VDD supply. The FlashPro Lite's VPP and VPN power supplies use the target pc board's
VDD as a power source. The target pc board must supply power to both the VDDP and VDD power
pins of the ProASICPLUS device in addition to supplying VDD to the FlashPro Lite. The target pc
board needs to provide at least 500 mA of current to the FlashPro Lite VDD connection for
programming.
3. Silicon Sculptor II and Silicon Sculptor 3 can only provide ISP for ProASIC and ProASICPLUS
families, not for Fusion, IGLOO, or ProASIC3 devices.

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Programming Flash Devices

Programmer Ordering Codes

The products shown in Table 10-4 can be ordered through Microsemi sales and will be shipped directly
from Microsemi. Products can also be ordered from Microsemi distributors, but will still be shipped
directly from Microsemi. Table 10-4 includes ordering codes for the full kit, as well as codes for
replacement items and any related hardware. Some additional products can be purchased from external
suppliers for use with the programmers. Ordering codes for adapter modules used with Silicon Sculptor
are available at http://www.microsemi.com/soc/products/hardware/program_debug/ss/modules.aspx.

Table 10-4 • Programming Ordering Codes

Description Vendor Ordering Code Comment
FlashPro4 ISP Microsemi FLASHPRO 4 Uses a 2×5, RA male header connector
programmer
FlashPro Lite ISP Microsemi FLASHPRO LITE Supports small programming header or
programmer large header through header converter
(not included)
Silicon Sculptor 3 Microsemi SILICON-SCULPTOR 3 USB 2.0 high-speed production
programmer
Silicon Sculptor II Microsemi SILICON-SCULPTOR II Requires add-on adapter modules to
support devices
Silicon Sculptor ISP Microsemi SMPA-ISP-ACTEL-3-KIT Ships with both large and small header
module support
ISP cable for small Microsemi ISP-CABLE-S Supplied with SMPA-ISP-ACTEL-3-KIT
header
ISP cable for large Microsemi PA-ISP-CABLE Supplied with SMPA-ISP-ACTEL-3-KIT
header

Programmer Device Support

Refer to www.microsemi.com/soc for the current information on programmer and device support.

Certified Programming Solutions

The Microsemi-certified programmers for flash devices are FlashPro4, FlashPro3, FlashPro Lite,
FlashPro, Silicon Sculptor II, Silicon Sculptor 3, and any programmer that is built by BP Microsystems. All
other programmers are considered noncertified programmers.
• FlashPro4, FlashPro3, FlashPro Lite, FlashPro
The Microsemi family of FlashPro device programmers provides in-system programming in an
easy-to-use, compact system that supports all flash families. Whether programming a board
containing a single device or multiple devices connected in a chain, the Microsemi line of
FlashPro programmers enables fast programming and reprogramming. Programming with the
FlashPro series of programmers saves board space and money as it eliminates the need for
sockets on the board. There are no built-in algorithms, so there is no delay between product
release and programming support. The FlashPro programmer is no longer available.
• Silicon Sculptor 3, Silicon Sculptor II
Silicon Sculptor 3 and Silicon Sculptor II are robust, compact, single-device programmers with
standalone software for the PC. They are designed to enable concurrent programming of multiple
units from the same PC with speeds equivalent to or faster than previous Microsemi
programmers.
• Noncertified Programmers
Microsemi does not test programming solutions from other vendors, and DOES NOT guarantee
programming yield. Also, Microsemi will not perform any failure analysis on devices programmed
on non-certified programmers. Please refer to the Programming and Functional Failure
Guidelines document for more information.

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• Programming Centers
Microsemi programming hardware policy also applies to programming centers. Microsemi
expects all programming centers to use certified programmers to program Microsemi devices. If a
programming center uses noncertified programmers to program Microsemi devices, the
"Noncertified Programmers" policy applies.

Important Programming Guidelines

Preprogramming Setup
Before programming, several steps are required to ensure an optimal programming yield.

Use Proper Handling and Electrostatic Discharge (ESD) Precautions

Microsemi FPGAs are sensitive electronic devices that are susceptible to damage from ESD and other
types of mishandling. For more information about ESD, refer to the Quality and Reliability Guide,
beginning with page 41.

Use the Latest Version of the Designer Software to Generate Your

Programming File (recommended)
The files used to program Microsemi flash devices (*.bit, *.stp, *.pdb) contain important information about
the switches that will be programmed in the FPGA. Find the latest version and corresponding release
notes at http://www.microsemi.com/soc/download/software/designer/. Also, programming files must
always be zipped during file transfer to avoid the possibility of file corruption.

Use the Latest Version of the Programming Software

The programming software is frequently updated to accommodate yield enhancements in FPGA
manufacturing. These updates ensure maximum programming yield and minimum programming times.
Before programming, always check the version of software being used to ensure it is the most recent.
Depending on the programming software, refer to one of the following:
• FlashPro: http://www.microsemi.com/soc/download/program_debug/flashpro/
• Silicon Sculptor: http://www.microsemi.com/soc/download/program_debug/ss/

Use the Most Recent Adapter Module with Silicon Sculptor

Occasionally, Microsemi makes modifications to the adapter modules to improve programming yields
and programming times. To identify the latest version of each module before programming, visit
http://www.microsemi.com/soc/products/hardware/program_debug/ss/modules.aspx.

Perform Routine Hardware Self-Diagnostic Test

• Adapter modules must be regularly cleaned. Adapter modules need to be inserted carefully into
the programmer to make sure the DIN connectors (pins at the back side) are not damaged.
• FlashPro
The self-test is only applicable when programming with FlashPro and FlashPro3 programmers. It
is not supported with FlashPro4 or FlashPro Lite. To run the self-diagnostic test, follow the
instructions given in the "Performing a Self-Test" section of
http://www.microsemi.com/soc/documents/FlashPro_UG.pdf.
• Silicon Sculptor
The self-diagnostic test verifies correct operation of the pin drivers, power supply, CPU, memory,
and adapter module. This test should be performed with an adapter module installed and before
every programming session. At minimum, the test must be executed every week. To perform self-
diagnostic testing using the Silicon Sculptor software, perform the following steps, depending on
the operating system:
– DOS: From anywhere in the software, type ALT + D.
– Windows: Click Device > choose Actel Diagnostic > select the Test tab > click OK.
Silicon Sculptor programmers must be verified annually for calibration. Refer to the Silicon
Sculptor Verification of Calibration Work Instruction document on the website.

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Signal Integrity While Using ISP

For ISP of flash devices, customers are expected to follow the board-level guidelines provided on the
Microsemi SoC Products Group website. These guidelines are discussed in the datasheets and
application notes (refer to the “Related Documents” section of the datasheet for application note links).
Customers are also expected to troubleshoot board-level signal integrity issues by measuring voltages
and taking oscilloscope plots.

Programming Failure Allowances

Microsemi has strict policies regarding programming failure allowances. Please refer to Programming
and Functional Failure Guidelines on the Microsemi SoC Products Group website for details.

Contacting the Customer Support Group

Highly skilled engineers staff the Customer Applications Center from 7:00 A.M. to 6:00 P.M., Pacific time,
Monday through Friday. You can contact the center by one of the following methods:

Electronic Mail
You can communicate your technical questions to our email address and receive answers back by email,
fax, or phone. Also, if you have design problems, you can email your design files to receive assistance.
Microsemi monitors the email account throughout the day. When sending your request to us, please be
sure to include your full name, company name, and contact information for efficient processing of your
request. The technical support email address is [email protected].

Telephone
Our Technical Support Hotline answers all calls. The center retrieves information, such as your name,
company name, telephone number, and question. Once this is done, a case number is assigned. Then
the center forwards the information to a queue where the first available applications engineer receives
the data and returns your call. The phone hours are from 7:00 A.M. to 6:00 P.M., Pacific time, Monday
through Friday.
The Customer Applications Center number is (800) 262-1060.
European customers can call +44 (0) 1256 305 600.

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Related Documents
Below is a list of related documents, their location on the Microsemi SoC Products Group website, and a
brief summary of each document.

Application Notes
Programming Antifuse Devices
http://www.microsemi.com/soc/documents/AntifuseProgram_AN.pdf
Implementation of Security in Actel's ProASIC and ProASICPLUS Flash-Based FPGAs
http://www.microsemi.com/soc/documents/Flash_Security_AN.pdf

User’s Guides
FlashPro Programmers
FlashPro4,1 FlashPro3, FlashPro Lite, and FlashPro2
http://www.microsemi.com/soc/products/hardware/program_debug/flashpro/default.aspx
FlashPro User's Guide
http://www.microsemi.com/soc/documents/FlashPro_UG.pdf
The FlashPro User’s Guide includes hardware and software setup, self-test instructions, use instructions,
and a troubleshooting / error message guide.

Silicon Sculptor 3 and Silicon Sculptor II

http://www.microsemi.com/soc/products/hardware/program_debug/ss/default.aspx

Other Documents
http://www.microsemi.com/soc/products/solutions/security/default.aspx#flashlock
The security resource center describes security in Microsemi Flash FPGAs.
Quality and Reliability Guide
http://www.microsemi.com/soc/documents/RelGuide.pdf
Programming and Functional Failure Guidelines
http://www.microsemi.com/soc/documents/FA_Policies_Guidelines_5-06-00002.pdf

1. FlashPro4 replaced FlashPro3 in Q1 2010.

2. FlashPro is no longer available.

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List of Changes
The following table lists critical changes that were made in each revision of the chapter.

Date Changes Page

July 2010 FlashPro4 is a replacement for FlashPro3 and has been added to this chapter. N/A
FlashPro is no longer available.
The chapter was updated to include SmartFusion devices. N/A
The following were deleted: N/A
"Live at Power-Up (LAPU) or Boot PROM" section
"Design Security" section
Table 14-2 • Programming Features for Actel Devices and much of the text in the
"Programming Features for Microsemi Devices" section
"Programming Flash FPGAs" section
"Return Material Authorization (RMA) Policies" section
The "Device Programmers" section was revised. 225
The Independent Programming Centers information was removed from the "Volume 226
Programming Services" section.
Table 10-3 • Programming Solutions was revised to add FlashPro4 and note that 227
FlashPro is discontinued. A note was added for FlashPro Lite regarding power
supply requirements.
Most items were removed from Table 10-4 • Programming Ordering Codes, 228
including FlashPro3 and FlashPro.
The "Programmer Device Support" section was deleted and replaced with a 228
reference to the Microsemi SoC Products Group website for the latest information.
The "Certified Programming Solutions" section was revised to add FlashPro4 and 228
remove Silicon Sculptor I and Silicon Sculptor 6X. Reference to Programming and
Functional Failure Guidelines was added.
The file type *.pdb was added to the "Use the Latest Version of the Designer 229
Software to Generate Your Programming File (recommended)" section.
Instructions on cleaning and careful insertion were added to the "Perform Routine 229
Hardware Self-Diagnostic Test" section. Information was added regarding testing
Silicon Sculptor programmers with an adapter module installed before every
programming session verifying their calibration annually.
The "Signal Integrity While Using ISP" section is new. 230
The "Programming Failure Allowances" section was revised. 230

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Date Changes Page

v1.3 The "Programming Support in Flash Devices" section was updated to include 222
(December 2008) IGLOO nano and ProASIC3 nano devices.
The "Flash Devices" section was updated to include information for IGLOO nano 223
devices. The following sentence was added: IGLOO PLUS devices can also be
operated at any voltage between 1.2 V and 1.5 V; the Designer software allows
50 mV increments in the voltage.
Table 10-4 · Programming Ordering Codes was updated to replace FP3-26PIN- 228
ADAPTER with FP3-10PIN-ADAPTER-KIT.
Table 14-6 · Programmer Device Support was updated to add IGLOO nano and 317
ProASIC3 nano devices. AGL400 was added to the IGLOO portion of the table.
v1.2 The "Programming Support in Flash Devices" section was revised to include new 222
(October 2008) families and make the information more concise.
Figure 10-1 · FlashPro Programming Setup and the "Programming Support in Flash 221, 222
Devices" section are new.
Table 14-6 · Programmer Device Support was updated to include A3PE600L with 317
the other ProASIC3L devices, and the RT ProASIC3 family was added.
v1.1 The "Flash Devices" section was updated to include the IGLOO PLUS family. The 223
(March 2008) text, "Voltage switching is required in-system to switch from a 1.2 V core to 1.5 V
core for programming," was revised to state, "Although the device can operate at
1.2 V core voltage, the device can only be reprogrammed when the core voltage is
1.5 V. Voltage switching is required in-system to switch from a 1.2 V supply (VCC,
VCCI, and VJTAG) to 1.5 V for programming."
The ProASIC3L family was added to Table 14-6 · Programmer Device Support as a 317
separate set of rows rather than combined with ProASIC3 and ProASIC3E devices.
The IGLOO PLUS family was included, and AGL015 and A3P015 were added.

Revision 5 233
11 – Security in Low Power Flash Devices

Security in Programmable Logic

The need for security on FPGA programmable logic devices (PLDs) has never been greater than today.
If the contents of the FPGA can be read by an external source, the intellectual property (IP) of the system
is vulnerable to unauthorized copying. Fusion, IGLOO, and ProASIC3 devices contain state-of-the-art
circuitry to make the flash-based devices secure during and after programming. Low power flash devices
have a built-in 128-bit Advanced Encryption Standard (AES) decryption core (except for 30 k gate
devices and smaller). The decryption core facilitates secure in-system programming (ISP) of the FPGA
core array fabric, the FlashROM, and the Flash Memory Blocks (FBs) in Fusion devices. The FlashROM,
Flash Blocks, and FPGA core fabric can be programmed independently of each other, allowing the
FlashROM or Flash Blocks to be updated without the need for change to the FPGA core fabric.
Microsemi has incorporated the AES decryption core into the low power flash devices and has also
included the Microsemi flash-based lock technology, FlashLock.® Together, they provide leading-edge
security in a programmable logic device. Configuration data loaded into a device can be decrypted prior
to being written to the FPGA core using the AES 128-bit block cipher standard. The AES encryption key
is stored in on-chip, nonvolatile flash memory.
This document outlines the security features offered in low power flash devices, some applications and
uses, as well as the different software settings for each application.

Figure 11-1 • Overview on Security

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Security in Low Power Flash Devices

Security Support in Flash-Based Devices

The flash FPGAs listed in Table 11-1 support the security feature and the functions described in this
document.

Table 11-1 • Flash-Based FPGAs

Series Family* Description
IGLOO IGLOO Ultra-low power 1.2 V to 1.5 V FPGAs with Flash*Freeze technology
IGLOOe Higher density IGLOO FPGAs with six PLLs and additional I/O standards
IGLOO nano The industry’s lowest-power, smallest-size solution
IGLOO PLUS IGLOO FPGAs with enhanced I/O capabilities
ProASIC3 ProASIC3 Low power, high-performance 1.5 V FPGAs
ProASIC3E Higher density ProASIC3 FPGAs with six PLLs and additional I/O standards
ProASIC3 nano Lowest-cost solution with enhanced I/O capabilities
ProASIC3L ProASIC3 FPGAs supporting 1.2 V to 1.5 V with Flash*Freeze technology
RT ProASIC3 Radiation-tolerant RT3PE600L and RT3PE3000L
Military ProASIC3/EL Military temperature A3PE600L, A3P1000, and A3PE3000L
Automotive ProASIC3 ProASIC3 FPGAs qualified for automotive applications
Fusion Fusion Mixed signal FPGA integrating ProASIC3 FPGA fabric, programmable
analog block, support for ARM Cortex™-M1 soft processors, and flash
memory into a monolithic device
Note: *The device names link to the appropriate datasheet, including product brief, DC and switching characteristics,
and packaging information.

IGLOO Terminology
In documentation, the terms IGLOO series and IGLOO devices refer to all of the IGLOO devices as listed
in Table 11-1. Where the information applies to only one product line or limited devices, these exclusions
will be explicitly stated.

ProASIC3 Terminology
In documentation, the terms ProASIC3 series and ProASIC3 devices refer to all of the ProASIC3 devices
as listed in Table 11-1. Where the information applies to only one product line or limited devices, these
exclusions will be explicitly stated.
To further understand the differences between the IGLOO and ProASIC3 devices, refer to the Industry’s
Lowest Power FPGAs Portfolio.

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Security Architecture
Fusion, IGLOO, and ProASIC3 devices have been designed with the most comprehensive programming
logic design security in the industry. In the architecture of these devices, security has been designed into
the very fabric. The flash cells are located beneath seven metal layers, and the use of many device
design and layout techniques makes invasive attacks difficult. Since device layers cannot be removed
without disturbing the charge on the programmed (or erased) flash gates, devices cannot be easily
deconstructed to decode the design. Low power flash devices are unique in being reprogrammable and
having inherent resistance to both invasive and noninvasive attacks on valuable IP. Secure, remote ISP
is now possible with AES encryption capability for the programming file during electronic transfer.
Figure 11-2 shows a view of the AES decryption core inside an IGLOO device; Figure 11-3 on page 238
shows the AES decryption core inside a Fusion device. The AES core is used to decrypt the encrypted
programming file when programming.

Bank 0
CCC

RAM Block
4,608-Bit Dual-Port
SRAM or FIFO Block
Bank 3

Bank 1
I/Os

VersaTile
Bank 3

Bank 1

RAM Block
ISP AES User Nonvolatile Flash*Freeze Charge
4,608-Bit Dual-Port
Decryption* FlashRom Technology Pumps SRAM or FIFO Block

Bank 2

Note: *ISP AES Decryption is not supported by 30 k gate devices and smaller. For details of other architecture features
by device, refer to the appropriate family datasheet.
Figure 11-2 • Block Representation of the AES Decryption Core in IGLOO and ProASIC3 Devices

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Bank 0 Bank 1
CCC

SRAM Block
4,608-Bit Dual-Port SRAM
or FIFO Block

OSC

I/Os

CCC/PLL

VersaTile
Bank 4

Bank 2
SRAM Block
4,608-Bit Dual-Port SRAM
ISP AES User Nonvolatile
Charge Pumps or FIFO Block
Decryption FlashROM

Flash Memory Blocks ADC Flash Memory Blocks

Analog Analog Analog Analog Analog Analog Analog Analog Analog Analog
Quad Quad Quad Quad Quad Quad Quad Quad Quad Quad

CCC
Bank 3

Figure 11-3 • Block Representation of the AES Decryption Core in a Fusion AFS600 FPGA

Security Features
IGLOO and ProASIC3 devices have two entities inside: FlashROM and the FPGA core fabric. Fusion
devices contain three entities: FlashROM, FBs, and the FPGA core fabric. The parts can be programmed
or updated independently with a STAPL programming file. The programming files can be AES-encrypted
or plaintext. This allows maximum flexibility in providing security to the entire device. Refer to the
"Programming Flash Devices" section on page 221 for information on the FlashROM structure.
Unlike SRAM-based FPGA devices, which require a separate boot PROM to store programming data,
low power flash devices are nonvolatile, and the secured configuration data is stored in on-chip flash
cells that are part of the FPGA fabric. Once programmed, this data is an inherent part of the FPGA array
and does not need to be loaded at system power-up. SRAM-based FPGAs load the configuration
bitstream upon power-up; therefore, the configuration is exposed and can be read easily.
The built-in FPGA core, FBs, and FlashROM support programming files encrypted with the 128-bit AES
(FIPS-192) block ciphers. The AES key is stored in dedicated, on-chip flash memory and can be
programmed before the device is shipped to other parties (allowing secure remote field updates).

Security in ARM-Enabled Low Power Flash Devices

There are slight differences between the regular flash devices and the ARM®-enabled flash devices,
which have the M1 and M7 prefix.
The AES key is used by Microsemi and preprogrammed into the device to protect the ARM IP. As a
result, the design is encrypted along with the ARM IP, according to the details below.

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Cortex-M1 Device Security

Cortex-M1–enabled devices are shipped with the following security features:
• FPGA array enabled for AES-encrypted programming and verification
• FlashROM enabled for AES-encrypted Write and Verify
• Fusion Embedded Flash Memory enabled for AES-encrypted Write

AES Encryption of Programming Files

Low power flash devices employ AES as part of the security mechanism that prevents invasive and
noninvasive attacks. The mechanism entails encrypting the programming file with AES encryption and
then passing the programming file through the AES decryption core, which is embedded in the device.
The file is decrypted there, and the device is successfully programmed. The AES master key is stored in
on-chip nonvolatile memory (flash). The AES master key can be preloaded into parts in a secure
programming environment (such as the Microsemi In-House Programming center), and then "blank"
parts can be shipped to an untrusted programming or manufacturing center for final personalization with
an AES-encrypted bitstream. Late-stage product changes or personalization can be implemented easily
and securely by simply sending a STAPL file with AES-encrypted data. Secure remote field updates over
public networks (such as the Internet) are possible by sending and programming a STAPL file with AES-
encrypted data.
The AES key protects the programming data for file transfer into the device with 128-bit AES encryption.
If AES encryption is used, the AES key is stored or preprogrammed into the device. To program, you
must use an AES-encrypted file, and the encryption used on the file must match the encryption key
already in the device.
The AES key is protected by a FlashLock security Pass Key that is also implemented in each device. The
AES key is always protected by the FlashLock Key, and the AES-encrypted file does NOT contain the
FlashLock Key. This FlashLock Pass Key technology is exclusive to the Microsemi flash-based device
families. FlashLock Pass Key technology can also be implemented without the AES encryption option,
providing a choice of different security levels.
In essence, security features can be categorized into the following three options:
• AES encryption with FlashLock Pass Key protection
• FlashLock protection only (no AES encryption)
• No protection
Each of the above options is explained in more detail in the following sections with application examples
and software implementation options.

Advanced Encryption Standard

The 128-bit AES standard (FIPS-192) block cipher is the NIST (National Institute of Standards and
Technology) replacement for DES (Data Encryption Standard FIPS46-2). AES has been designed to
protect sensitive government information well into the 21st century. It replaces the aging DES, which
NIST adopted in 1977 as a Federal Information Processing Standard used by federal agencies to protect
sensitive, unclassified information. The 128-bit AES standard has 3.4 × 1038 possible 128-bit key
variants, and it has been estimated that it would take 1,000 trillion years to crack 128-bit AES cipher text
using exhaustive techniques. Keys are stored (securely) in low power flash devices in nonvolatile flash
memory. All programming files sent to the device can be authenticated by the part prior to programming
to ensure that bad programming data is not loaded into the part that may possibly damage it. All
programming verification is performed on-chip, ensuring that the contents of low power flash devices
remain secure.
Microsemi has implemented the 128-bit AES (Rijndael) algorithm in low power flash devices. With this
key size, there are approximately 3.4 × 1038 possible 128-bit keys. DES has a 56-bit key size, which
provides approximately 7.2 × 1016 possible keys. In their AES fact sheet, the National Institute of
Standards and Technology uses the following hypothetical example to illustrate the theoretical security
provided by AES. If one were to assume that a computing system existed that could recover a DES key
in a second, it would take that same machine approximately 149 trillion years to crack a 128-bit AES key.
NIST continues to make their point by stating the universe is believed to be less than 20 billion years
old.1

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The AES key is securely stored on-chip in dedicated low power flash device flash memory and cannot be
read out. In the first step, the AES key is generated and programmed into the device (for example, at a
secure or trusted programming site). The Microsemi Designer software tool provides AES key generation
capability. After the key has been programmed into the device, the device will only correctly decrypt
programming files that have been encrypted with the same key. If the individual programming file content
is incorrect, a Message Authentication Control (MAC) mechanism inside the device will fail in
authenticating the programming file. In other words, when an encrypted programming file is being loaded
into a device that has a different programmed AES key, the MAC will prevent this incorrect data from
being loaded, preventing possible device damage. See Figure 11-3 on page 238 and Figure 11-4 on
page 240 for graphical representations of this process.
It is important to note that the user decides what level of protection will be implemented for the device.
When AES protection is desired, the FlashLock Pass Key must be set. The AES key is a content
protection mechanism, whereas the FlashLock Pass Key is a device protection mechanism. When the
AES key is programmed into the device, the device still needs the Pass Key to protect the FPGA and
FlashROM contents and the security settings, including the AES key. Using the FlashLock Pass Key
prevents modification of the design contents by means of simply programming the device with a different
AES key.

AES Decryption and MAC Authentication

Low power flash devices have a built-in 128-bit AES decryption core, which decrypts the encrypted
programming file and performs a MAC check that authenticates the file prior to programming.
MAC authenticates the entire programming data stream. After AES decryption, the MAC checks the data
to make sure it is valid programming data for the device. This can be done while the device is still
operating. If the MAC validates the file, the device will be erased and programmed. If the MAC fails to
validate, then the device will continue to operate uninterrupted.
This will ensure the following:
• Correct decryption of the encrypted programming file
• Prevention of erroneous or corrupted data being programmed during the programming file
transfer
• Correct bitstream passed to the device for decryption

IGLOO and ProASIC3

MAC
Designer Validation
Software
Decrypted
Programming Bitstream
File Generation
with AES
Encryption AES AES FPGA
FlashROM
Key Decryption Core Core

Transmit Medium /
Public Network
Encrypted Bitstream

Figure 11-4 • Example Application Scenario Using AES in IGLOO and ProASIC3 Devices

1. National Institute of Standards and Technology, “ADVANCED ENCRYPTION STANDARD (AES) Questions and Answers,”
28 January 2002 (10 January 2005). See http://csrc.nist.gov/archive/aes/index1.html for more information.

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Fusion

MAC
Designer Validation
Software
Decrypted
Programming Bitstream
File Generation
with AES
Encryption AES AES FPGA
FlashROM FBs
Key Decryption Core Core

Transmit Medium /
Public Network
Encrypted Bitstream

Figure 11-5 • Example Application Scenario Using AES in Fusion Devices

FlashLock
Additional Options for IGLOO and ProASIC3 Devices
The user also has the option of prohibiting Write operations to the FPGA array but allowing Verify
operations on the FPGA array and/or Read operations on the FlashROM without the use of the
FlashLock Pass Key. This option provides the user the freedom of verifying the FPGA array and/or
reading the FlashROM contents after the device is programmed, without having to provide the FlashLock
Pass Key. The user can incorporate AES encryption on the programming files to better enhance the level
of security used.

Permanent Security Setting Options

In applications where a permanent lock is not desired, yet the security settings should not be modifiable,
IGLOO and ProASIC3 devices can accommodate this requirement.
This application is particularly useful in cases where a device is located at a remote location and must be
reprogrammed with a design or data update. Refer to the "Application 3: Nontrusted Environment—Field
Updates/Upgrades" section on page 244 for further discussion and examples of how this can be
achieved.
The user must be careful when considering the Permanent FlashLock or Permanent Security Settings
option. Once the design is programmed with the permanent settings, it is not possible to reconfigure the
security settings already employed on the device. Therefore, exercise careful consideration before
programming permanent settings.

Permanent FlashLock
The purpose of the permanent lock feature is to provide the benefits of the highest level of security to
IGLOO and ProASIC3 devices. If selected, the permanent FlashLock feature will create a permanent
barrier, preventing any access to the contents of the device. This is achieved by permanently disabling
Write and Verify access to the array, and Write and Read access to the FlashROM. After permanently
locking the device, it has been effectively rendered one-time-programmable. This feature is useful if the
intended applications do not require design or system updates to the device.

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Security in Action
This section illustrates some applications of the security advantages of Microsemi’s devices (Figure 11-6).

.
Plaintext AES
Source File Encryption

Cipher Text
Source File

Public
Domain

Application 1

Application 2

Application 3
AES Decryption Core

FlashROM FPGA Core Flash Blocks

Flash Device

Note: Flash blocks are only used in Fusion devices

Figure 11-6 • Security Options

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Application 1: Trusted Environment

As illustrated in Figure 11-7, this application allows the programming of devices at design locations
where research and development take place. Therefore, encryption is not necessary and is optional to
the user. This is often a secure way to protect the design, since the design program files are not sent
elsewhere. In situations where production programming is not available at the design location,
programming centers (such as Microsemi In-House Programming) provide a way of programming
designs at an alternative, secure, and trusted location. In this scenario, the user generates a STAPL
programming file from the Designer software in plaintext format, containing information on the entire
design or the portion of the design to be programmed. The user can choose to employ the FlashLock
Pass Key feature with the design. Once the design is programmed to unprogrammed devices, the design
is protected by this FlashLock Pass Key. If no future programming is needed, the user can consider
permanently securing the IGLOO and ProASIC3 device, as discussed in the "Permanent FlashLock"
section on page 241.

Application 2: Nontrusted Environment—Unsecured Location

Often, programming of devices is not performed in the same location as actual design implementation, to
reduce manufacturing cost. Overseas programming centers and contract manufacturers are examples of
this scenario.
To achieve security in this case, the AES key and the FlashLock Pass Key can be initially programmed
in-house (trusted environment). This is done by generating a programming file with only the security
settings and no design contents. The design FPGA core, FlashROM, and (for Fusion) FB contents are
generated in a separate programming file. This programming file must be set with the same AES key that
was used to program to the device previously so the device will correctly decrypt this encrypted
programming file. As a result, the encrypted design content programming file can be safely sent off-site
to nontrusted programming locations for design programming. Figure 11-7 shows a more detailed flow
for this application.

OEM Trusted Environment

Generates Design Generates and Programs Security Settings Only

Contents Encrypted (programming of the security keys)
with AES

Flash Device

Security Settings* Security Settings

AES and/or Flash Device

Pass Key FPGA/FlashROM/FBs FPGA/FlashROM/FBs
Protected
Programming File

Sends File(s) Ships Devices Returns Programmed Ships Programmed

to Manufacturer to Manufacturer Devices to Vendor Devices to End Customer

Security Settings

FPGA/FlashROM/FBs
Programs Design
Contents
Contents to Devices
Flash Device OEM
Customers
Nontrusted Manufacturing Environment

Notes:
1. Programmed portion indicated with dark gray.
2. Programming of FBs applies to Fusion only.
Figure 11-7 • Application 2: Device Programming in a Nontrusted Environment

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Application 3: Nontrusted Environment—Field Updates/Upgrades

Programming or reprogramming of devices may occur at remote locations. Reconfiguration of devices in
consumer products/equipment through public networks is one example. Typically, the remote system is
already programmed with particular design contents. When design update (FPGA array contents update)
and/or data upgrade (FlashROM and/or FB contents upgrade) is necessary, an updated programming file
with AES encryption can be generated, sent across public networks, and transmitted to the remote
system. Reprogramming can then be done using this AES-encrypted programming file, providing easy
and secure field upgrades. Low power flash devices support this secure ISP using AES. The detailed
flow for this application is shown in Figure 11-8. Refer to the "Microprocessor Programming of
Microsemi’s Low Power Flash Devices" chapter of an appropriate FPGA fabric user’s guide for more
information.
To prepare devices for this scenario, the user can initially generate a programming file with the available
security setting options. This programming file is programmed into the devices before shipment. During
the programming file generation step, the user has the option of making the security settings permanent
or not. In situations where no changes to the security settings are necessary, the user can select this
feature in the software to generate the programming file with permanent security settings. Microsemi
recommends that the programming file use encryption with an AES key, especially when ISP is done via
public domain.
For example, if the designer wants to use an AES key for the FPGA array and the FlashROM,
Permanent needs to be chosen for this setting. At first, the user chooses the options to use an AES key
for the FPGA array and the FlashROM, and then chooses Permanently lock the security settings. A
unique AES key is chosen. Once this programming file is generated and programmed to the devices, the
AES key is permanently stored in the on-chip memory, where it is secured safely. The devices are sent to
distant locations for the intended application. When an update is needed, a new programming file must
be generated. The programming file must use the same AES key for encryption; otherwise, the
authentication will fail and the file will not be programmed in the device.

Trusted Environment
OEM
Generates Updated Design Contents
Encrypted with AES

AES Encrypted
Programming File

Transmits to
Remote System

Update/Upgrade

Original Design
Contents AES
Flash Device Encrypted and
FlashLock Pass Key
Protected

Remote Environment / System

Figure 11-8 • Application 3: Nontrusted Environment—Field Updates/Upgrades

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FlashROM Security Use Models

Each of the subsequent sections describes in detail the available selections in Microsemi Designer as an
aid to understanding security applications and generating appropriate programming files for those
applications. Before proceeding, it is helpful to review Figure 11-7 on page 243, which gives a general
overview of the programming file generation flow within the Designer software as well as what occurs
during the device programming stage. Specific settings are discussed in the following sections.
In Figure 11-7 on page 243, the flow consists of two sub-flows. Sub-flow 1 describes programming
security settings to the device only, and sub-flow 2 describes programming the design contents only.
In Application 1, described in the "Application 1: Trusted Environment" section on page 243, the user
does not need to generate separate files but can generate one programming file containing both security
settings and design contents. Then programming of the security settings and design contents is done in
one step. Both sub-flow 1 and sub-flow 2 are used.
In Application 2, described in the "Application 2: Nontrusted Environment—Unsecured Location" section
on page 243, the trusted site should follow sub-flows 1 and 2 separately to generate two separate
programming files. The programming file from sub-flow 1 will be used at the trusted site to program the
device(s) first. The programming file from sub-flow 2 will be sent off-site for production programming.
In Application 3, described in the "Application 3: Nontrusted Environment—Field Updates/Upgrades"
section on page 244, typically only sub-flow 2 will be used, because only updates to the design content
portion are needed and no security settings need to be changed.
In the event that update of the security settings is necessary, see the "Reprogramming Devices" section
on page 255 for details. For more information on programming low power flash devices, refer to the "In-
System Programming (ISP) of Microsemi’s Low Power Flash Devices Using FlashPro4/3/3X" section on
page 261.

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Security in Low Power Flash Devices

User
Designer Software Programming Software

Software
Program User Assigns Desired Security Settings Device Programs
Security To FPGA/FlashROM/FB/All: Previously No Selected
1 – AES Key and FlashLock Pass Key Programmed?
Settings Security Settings
– FlashLock Pass Key Only into Device

Yes Yes

Software Performs
Software Generates Programming File Comparison of Does
with Desired Security Settings: FlashLock Pass Key FlashLock
– Encrypted with AES and Protected between Pass Key
with FlashLock Pass Key Programming File Match?
– Protected with FlashLock Pass Key Only and Device

No

Returns Error

Software Generates
Program Programming File Design Content
Programming
2 Design Previously No with Desired Programmed
Secured Design Contents into Device
Contents
Device(s)? (FPGA Array,
FlashROM, FB,
or All)
Yes

Yes Software Performs

Comparison of Does
FlashLock Pass Key FlashLock
User Must between Pass Key
Reassign Exact Programming File Match?
AES Key Used FlashLock Pass Key
No and Device
Previously? Previously
Programmed
into the Device No

Yes
Returns Error

User Must Software Generates

Reassign Exact Programming File
AES Key No
with FlashLock
Previously Pass Key and
Programmed Design Contents Encrypted Design
into the Device Content Passes
through MAC for Correct?
Authentication

Yes

Software Generates
Programming File Design Content
with Encrypted Decrypted and
Design Contents Programmed
into Device

Note: If programming the Security Header only, just perform sub-flow 1.

If programming design content only, just perform sub-flow 2.
Figure 11-9 • Security Programming Flows

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Generating Programming Files

Generation of the Programming File in a Trusted Environment—

Application 1
As discussed in the "Application 1: Trusted Environment" section on page 243, in a trusted environment,
the user can choose to program the device with plaintext bitstream content. It is possible to use plaintext
for programming even when the FlashLock Pass Key option has been selected. In this application, it is
not necessary to employ AES encryption protection. For AES encryption settings, refer to the next
sections.
The generated programming file will include the security setting (if selected) and the plaintext
programming file content for the FPGA array, FlashROM, and/or FBs. These options are indicated in
Table 11-2 and Table 11-3.

Table 11-2 • IGLOO and ProASIC3 Plaintext Security Options, No AES

Both FlashROM
Security Protection FlashROM Only FPGA Core Only and FPGA
No AES / no FlashLock ✓ ✓ ✓
FlashLock only ✓ ✓ ✓
AES and FlashLock – – –

Table 11-3 • Fusion Plaintext Security Options

Security Protection FlashROM Only FPGA Core Only FB Core Only All
No AES / no FlashLock ✓ ✓ ✓ ✓
FlashLock ✓ ✓ ✓ ✓
AES and FlashLock – – – –
Note: For all instructions, the programming of Flash Blocks refers to Fusion only.

For this scenario, generate the programming file as follows:

1. Select the Silicon features to be programmed (Security Settings, FPGA Array, FlashROM,
Flash Memory Blocks), as shown in Figure 11-10 on page 248 and Figure 11-11 on page 248.
Click Next.
If Security Settings is selected (i.e., the FlashLock security Pass Key feature), an additional
dialog will be displayed to prompt you to select the security level setting. If no security setting is
selected, you will be directed to Step 3.

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Figure 11-10 • All Silicon Features Selected for IGLOO and ProASIC3 Devices

Figure 11-11 • All Silicon Features Selected for Fusion

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2. Choose the appropriate security level setting and enter a FlashLock Pass Key. The default is the
Medium security level (Figure 11-12). Click Next.
If you want to select different options for the FPGA and/or FlashROM, this can be set by clicking
Custom Level. Refer to the "Advanced Options" section on page 256 for different custom
security level options and descriptions of each.

Figure 11-12 • Medium Security Level Selected for Low Power Flash Devices

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Security in Low Power Flash Devices

3. Choose the desired settings for the FlashROM configurations to be programmed (Figure 11-13).
Click Finish to generate the STAPL programming file for the design.

Figure 11-13 • FlashROM Configuration Settings for Low Power Flash Devices

Generation of Security Header Programming File Only—

Application 2
As mentioned in the "Application 2: Nontrusted Environment—Unsecured Location" section on page 243,
the designer may employ FlashLock Pass Key protection or FlashLock Pass Key with AES encryption on
the device before sending it to a nontrusted or unsecured location for device programming. To achieve
this, the user needs to generate a programming file containing only the security settings desired (Security
Header programming file).
Note: If AES encryption is configured, FlashLock Pass Key protection must also be configured.
The available security options are indicated in Table 11-4 and Table 11-5 on page 251.
Table 11-4 • FlashLock Security Options for IGLOO and ProASIC3
Both FlashROM
Security Option FlashROM Only FPGA Core Only and FPGA
No AES / no FlashLock – – –
FlashLock only ✓ ✓ ✓
AES and FlashLock ✓ ✓ ✓

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Table 11-5 • FlashLock Security Options for Fusion

Security Option FlashROM Only FPGA Core Only FB Core Only All
No AES / no FlashLock – – – –
FlashLock ✓ ✓ ✓ ✓
AES and FlashLock ✓ ✓ ✓ ✓
For this scenario, generate the programming file as follows:
1. Select only the Security settings option, as indicated in Figure 11-14 and Figure 11-15 on
page 252. Click Next.

Figure 11-14 • Programming IGLOO and ProASIC3 Security Settings Only

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Security in Low Power Flash Devices

Figure 11-15 • Programming Fusion Security Settings Only

2. Choose the desired security level setting and enter the key(s).
– The High security level employs FlashLock Pass Key with AES Key protection.
– The Medium security level employs FlashLock Pass Key protection only.

Figure 11-16 • High Security Level to Implement FlashLock Pass Key and AES Key Protection

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Table 11-6 and Table 11-7 show all available options. If you want to implement custom levels,
refer to the "Advanced Options" section on page 256 for information on each option and how to
set it.
3. When done, click Finish to generate the Security Header programming file.

Table 11-6 • All IGLOO and ProASIC3 Header File Security Options
Both FlashROM
Security Option FlashROM Only FPGA Core Only and FPGA
No AES / no FlashLock ✓ ✓ ✓
FlashLock only ✓ ✓ ✓
AES and FlashLock ✓ ✓ ✓
Note: ✓ = options that may be used

Table 11-7 • All Fusion Header File Security Options

Security Option FlashROM Only FPGA Core Only FB Core Only All
No AES / No FlashLock ✓ ✓ ✓ ✓
FlashLock ✓ ✓ ✓ ✓
AES and FlashLock ✓ ✓ ✓ ✓

Generation of Programming Files with AES Encryption—

Application 3
This section discusses how to generate design content programming files needed specifically at
unsecured or remote locations to program devices with a Security Header (FlashLock Pass Key and AES
key) already programmed ("Application 2: Nontrusted Environment—Unsecured Location" section on
page 243 and "Application 3: Nontrusted Environment—Field Updates/Upgrades" section on page 244).
In this case, the encrypted programming file must correspond to the AES key already programmed into
the device. If AES encryption was previously selected to encrypt the FlashROM, FBs, and FPGA array,
AES encryption must be set when generating the programming file for them. AES encryption can be
applied to the FlashROM only, the FBs only, the FPGA array only, or all. The user must ensure both the
FlashLock Pass Key and the AES key match those already programmed to the device(s), and all security
settings must match what was previously programmed. Otherwise, the encryption and/or device
unlocking will not be recognized when attempting to program the device with the programming file.
The generated programming file will be AES-encrypted.
In this scenario, generate the programming file as follows:
1. Deselect Security settings and select the portion of the device to be programmed (Figure 11-17
on page 254). Select Programming previously secured device(s). Click Next.

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Note: The settings in this figure are used to show the generation of an AES-encrypted programming file for the FPGA
array, FlashROM, and FB contents. One or all locations may be selected for encryption.
Figure 11-17 • Settings to Program a Device Secured with FlashLock and using AES Encryption

Choose the High security level to reprogram devices using both the FlashLock Pass Key and AES key
protection (Figure 11-18 on page 255). Enter the AES key and click Next.
A device that has already been secured with FlashLock and has an AES key loaded must recognize the
AES key to program the device and generate a valid bitstream in authentication. The FlashLock Key is
only required to unlock the device and change the security settings.
This is what makes it possible to program in an untrusted environment. The AES key is protected inside
the device by the FlashLock Key, so you can only program if you have the correct AES key. In fact, the
AES key is not in the programming file either. It is the key used to encrypt the data in the file. The same
key previously programmed with the FlashLock Key matches to decrypt the file.
An AES-encrypted file programmed to a device without FlashLock would not be secure, since without
FlashLock to protect the AES key, someone could simply reprogram the AES key first, then program with
any AES key desired or no AES key at all. This option is therefore not available in the software.

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Figure 11-18 • Security Level Set High to Reprogram Device with AES Key
Programming with this file is intended for an unsecured environment. The AES key encrypts the
programming file with the same AES key already used in the device and utilizes it to program the device.

Reprogramming Devices
Previously programmed devices can be reprogrammed using the steps in the "Generation of the
Programming File in a Trusted Environment—Application 1" section on page 247 and "Generation of
Security Header Programming File Only—Application 2" section on page 250. In the case where a
FlashLock Pass Key has been programmed previously, the user must generate the new programming file
with a FlashLock Pass Key that matches the one previously programmed into the device. The software
will check the FlashLock Pass Key in the programming file against the FlashLock Pass Key in the device.
The keys must match before the device can be unlocked to perform further programming with the new
programming file.
Figure 11-10 on page 248 and Figure 11-11 on page 248 show the option Programming previously
secured device(s), which the user should select before proceeding. Upon going to the next step, the
user will be notified that the same FlashLock Pass Key needs to be entered, as shown in Figure 11-19 on
page 256.

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Figure 11-19 • FlashLock Pass Key, Previously Programmed Devices

It is important to note that when the security settings need to be updated, the user also needs to select
the Security settings check box in Step 1, as shown in Figure 11-10 on page 248 and Figure 11-11 on
page 248, to modify the security settings. The user must consider the following:
• If only a new AES key is necessary, the user must re-enter the same Pass Key previously
programmed into the device in Designer and then generate a programming file with the same
Pass Key and a different AES key. This ensures the programming file can be used to access and
program the device and the new AES key.
• If a new Pass Key is necessary, the user can generate a new programming file with a new Pass
Key (with the same or a new AES key if desired). However, for programming, the user must first
load the original programming file with the Pass Key that was previously used to unlock the
device. Then the new programming file can be used to program the new security settings.

Advanced Options
As mentioned, there may be applications where more complicated security settings are required. The
“Custom Security Levels” section in the FlashPro User's Guide describes different advanced options
available to aid the user in obtaining the best available security settings.

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Programming File Header Definition

In each STAPL programming file generated, there will be information about how the AES key and
FlashLock Pass Key are configured. Table 11-8 shows the header definitions in STAPL programming
files for different security levels.
Table 11-8 • STAPL Programming File Header Definitions by Security Level
Security Level STAPL File Header Definition
No security (no FlashLock Pass Key or AES key) NOTE "SECURITY" "Disable";

FlashLock Pass Key with no AES key NOTE "SECURITY" "KEYED ";

FlashLock Pass Key with AES key NOTE "SECURITY" "KEYED ENCRYPT ";

Permanent Security Settings option enabled NOTE "SECURITY" "PERMLOCK ENCRYPT ";

AES-encrypted FPGA array (for programming updates) NOTE "SECURITY" "ENCRYPT CORE ";

AES-encrypted FlashROM (for programming updates) NOTE "SECURITY" "ENCRYPT FROM ";

AES-encrypted FPGA array and FlashROM (for NOTE "SECURITY" "ENCRYPT FROM CORE ";
programming updates)

Example File Headers

STAPL Files Generated with FlashLock Key and AES Key Containing Key Information
• FlashLock Key / AES key indicated in STAPL file header definition
• Intended ONLY for secured/trusted environment programming applications
=============================================
NOTE "CREATOR" "Designer Version: 6.1.1.108";
NOTE "DEVICE" "A3PE600";
NOTE "PACKAGE" "208 PQFP";
NOTE "DATE" "2005/04/08";
NOTE "STAPL_VERSION" "JESD71";
NOTE "IDCODE" "$123261CF";
NOTE "DESIGN" "counter32";
NOTE "CHECKSUM" "$EDB9";
NOTE "SAVE_DATA" "FRomStream";
NOTE "SECURITY" "KEYED ENCRYPT ";
NOTE "ALG_VERSION" "1";
NOTE "MAX_FREQ" "20000000";
NOTE "SILSIG" "$00000000";
NOTE "PASS_KEY" "$00123456789012345678901234567890";
NOTE "AES_KEY" "$ABCDEFABCDEFABCDEFABCDEFABCDEFAB";
==============================================

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STAPL File with AES Encryption

• Does not contain AES key / FlashLock Key information
• Intended for transmission through web or service to unsecured locations for programming
=============================================
NOTE "CREATOR" "Designer Version: 6.1.1.108";
NOTE "DEVICE" "A3PE600";
NOTE "PACKAGE" "208 PQFP";
NOTE "DATE" "2005/04/08";
NOTE "STAPL_VERSION" "JESD71";
NOTE "IDCODE" "$123261CF";
NOTE "DESIGN" "counter32";
NOTE "CHECKSUM" "$EF57";
NOTE "SAVE_DATA" "FRomStream";
NOTE "SECURITY" "ENCRYPT FROM CORE ";
NOTE "ALG_VERSION" "1";
NOTE "MAX_FREQ" "20000000";
NOTE "SILSIG" "$00000000";

Conclusion
The new and enhanced security features offered in Fusion, IGLOO, and ProASIC3 devices provide state-
of-the-art security to designs programmed into these flash-based devices. Microsemi low power flash
devices employ the encryption standard used by NIST and the U.S. government—AES using the 128-bit
Rijndael algorithm.
The combination of an on-chip AES decryption engine and FlashLock technology provides the highest
level of security against invasive attacks and design theft, implementing the most robust and secure ISP
solution. These security features protect IP within the FPGA and protect the system from cloning,
wholesale “black box” copying of a design, invasive attacks, and explicit IP or data theft.

Glossary
Term Explanation
Security Header Programming file used to program the FlashLock Pass Key and/or AES key into the device to
programming file secure the FPGA, FlashROM, and/or FBs.
AES (encryption) key 128-bit key defined by the user when the AES encryption option is set in the Microsemi
Designer software when generating the programming file.
FlashLock Pass Key 128-bit key defined by the user when the FlashLock option is set in the Microsemi Designer
software when generating the programming file.
The FlashLock Key protects the security settings programmed to the device. Once a device
is programmed with FlashLock, whatever settings were chosen at that time are secure.
FlashLock The combined security features that protect the device content from attacks. These features
are the following:
• Flash technology that does not require an external bitstream to program the device
• FlashLock Pass Key that secures device content by locking the security settings and
preventing access to the device as defined by the user
• AES key that allows secure, encrypted device reprogrammability

References
National Institute of Standards and Technology. “ADVANCED ENCRYPTION STANDARD (AES)
Questions and Answers.” 28 January 2002 (10 January 2005).
See http://csrc.nist.gov/archive/aes/index1.html for more information.

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Related Documents

User’s Guides
FlashPro User's Guide
http://www.microsemi.com/soc/documents/flashpro_ug.pdf

List of Changes
The following table lists critical changes that were made in each revision of the chapter.

Date Changes Page

July 2010 This chapter is no longer published separately with its own part number and version N/A
but is now part of several FPGA fabric user’s guides.
v1.5 The "CoreMP7 Device Security" section was removed from "Security in ARM- 238
(August 2009) Enabled Low Power Flash Devices", since M7-enabled devices are no longer
supported.
v1.4 IGLOO nano and ProASIC3 nano devices were added to Table 11-1 • Flash-Based 236
(December 2008) FPGAs.
v1.3 The "Security Support in Flash-Based Devices" section was revised to include new 236
(October 2008) families and make the information more concise.
v1.2 The following changes were made to the family descriptions in Table 11-1 • Flash- 236
(June 2008) Based FPGAs:
• ProASIC3L was updated to include 1.5 V.
• The number of PLLs for ProASIC3E was changed from five to six.
v1.1 The chapter was updated to include the IGLOO PLUS family and information N/A
(March 2008) regarding 15 k gate devices.
The "IGLOO Terminology" section and "ProASIC3 Terminology" section are new. 236

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Low Power Flash Devices Using FlashPro4/3/3X

Introduction
Microsemi’s low power flash devices are all in-system programmable. This document describes the
general requirements for programming a device and specific requirements for the FlashPro4/3/3X
programmers1.
IGLOO, ProASIC3, SmartFusion, and Fusion devices offer a low power, single-chip, live-at-power-up
solution with the ASIC advantages of security and low unit cost through nonvolatile flash technology.
Each device contains 1 kbit of on-chip, user-accessible, nonvolatile FlashROM. The FlashROM can be
used in diverse system applications such as Internet Protocol (IP) addressing, user system preference
storage, device serialization, or subscription-based business models. IGLOO, ProASIC3, SmartFusion,
and Fusion devices offer the best in-system programming (ISP) solution, FlashLock® security features,
and AES-decryption-based ISP.

ISP Architecture
Low power flash devices support ISP via JTAG and require a single VPUMP voltage of 3.3 V during
programming. In addition, programming via a microcontroller in a target system is also supported.
Refer to the "Microprocessor Programming of Microsemi’s Low Power Flash Devices" chapter of an
appropriate FPGA fabric user’s guide.
Family-specific support:
• ProASIC3, ProASIC3E, SmartFusion, and Fusion devices support ISP.
• ProASIC3L devices operate using a 1.2 V core voltage; however, programming can be done only
at 1.5 V. Voltage switching is required in-system to switch from a 1.2 V core to 1.5 V core for
programming.
• IGLOO and IGLOOe V5 devices can be programmed in-system when the device is using a 1.5 V
supply voltage to the FPGA core.
• IGLOO nano V2 devices can be programmed at 1.2 V core voltage (when using FlashPro4 only)
or 1.5 V. IGLOO nano V5 devices are programmed with a VCC core voltage of 1.5 V. Voltage
switching is required in-system to switch from a 1.2 V supply (VCC,VCCI, and VJTAG) to 1.5 V
for programming. The exception is that V2 devices can be programmed at 1.2 V VCC with
FlashPro4.
IGLOO devices cannot be programmed in-system when the device is in Flash*Freeze mode. The device
should exit Flash*Freeze mode and be in normal operation for programming to start. Programming
operations in IGLOO devices can be achieved when the device is in normal operating mode and a 1.5 V
core voltage is used.

JTAG 1532
IGLOO, ProASIC3, SmartFusion, and Fusion devices support the JTAG-based IEEE 1532 standard for
ISP. To start JTAG operations, the IGLOO device must exit Flash*Freeze mode and be in normal
operation before starting to send JTAG commands to the device. As part of this support, when a device is
in an unprogrammed state, all user I/O pins are disabled. This is achieved by keeping the global IO_EN

1. FlashPro4 replaced FlashPro3/3X in 2010 and is backward compatible with FlashPro3/3X as long as there is no connection
to pin 4 on the JTAG header on the board. On FlashPro3/3X, there is no connection to pin 4 on the JTAG header; however,
pin 4 is used for programming mode (Prog_Mode) on FlashPro4. When converting from FlashPro3/3X to FlashPro4, users
should make sure that JTAG connectors on system boards do not have any connection to pin 4. FlashPro3X supports
discrete TCK toggling that is needed to support non-JTAG compliant devices in the chain. This feature is included in
FlashPro4.

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signal deactivated, which also has the effect of disabling the input buffers. The SAMPLE/PRELOAD
instruction captures the status of pads in parallel and shifts them out as new data is shifted in for loading
into the Boundary Scan Register (BSR). When the device is in an unprogrammed state, the OE and
output BSR will be undefined; however, the input BSR will be defined as long as it is connected and
being used. For JTAG timing information on setup, hold, and fall times, refer to the FlashPro User’s
Guide.

ISP Support in Flash-Based Devices

The flash FPGAs listed in Table 12-1 support the ISP feature and the functions described in this
document.
Table 12-1 • Flash-Based FPGAs Supporting ISP
Series Family* Description
IGLOO IGLOO Ultra-low power 1.2 V to 1.5 V FPGAs with Flash*Freeze technology
IGLOOe Higher density IGLOO FPGAs with six PLLs and additional I/O standards
IGLOO nano The industry’s lowest-power, smallest-size solution
IGLOO PLUS IGLOO FPGAs with enhanced I/O capabilities
ProASIC3 ProASIC3 Low power, high-performance 1.5 V FPGAs
ProASIC3E Higher density ProASIC3 FPGAs with six PLLs and additional I/O standards
ProASIC3 nano Lowest-cost solution with enhanced I/O capabilities
ProASIC3L ProASIC3 FPGAs supporting 1.2 V to 1.5 V with Flash*Freeze technology
RT ProASIC3 Radiation-tolerant RT3PE600L and RT3PE3000L
Military ProASIC3/EL Military temperature A3PE600L, A3P1000, and A3PE3000L
Automotive ProASIC3 ProASIC3 FPGAs qualified for automotive applications
SmartFusion SmartFusion Mixed signal FPGA integrating ProASIC3 FPGA fabric, programmable
microcontroller subsystem (MSS) which includes programmable analog and
an ARM® Cortex™-M3 hard processor and flash memory in a monolithic
device
Fusion Fusion Mixed signal FPGA integrating ProASIC3 FPGA fabric, programmable
analog block, support for ARM® Cortex™-M1 soft processors, and flash
memory into a monolithic device
ProASIC ProASIC First generation ProASIC devices
ProASICPLUS Second generation ProASIC devices
Note: *The device names link to the appropriate datasheet, including product brief, DC and switching characteristics,
and packaging information.

IGLOO Terminology
In documentation, the terms IGLOO series and IGLOO devices refer to all of the IGLOO devices as listed
in Table 12-1. Where the information applies to only one product line or limited devices, these exclusions
will be explicitly stated.

ProASIC3 Terminology
In documentation, the terms ProASIC3 series and ProASIC3 devices refer to all of the ProASIC3 devices
as listed in Table 12-1. Where the information applies to only one product line or limited devices, these
exclusions will be explicitly stated.
To further understand the differences between the IGLOO and ProASIC3 devices, refer to the Industry’s
Lowest Power FPGAs Portfolio.

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Programming Voltage (VPUMP) and VJTAG

Low-power flash devices support on-chip charge pumps, and therefore require only a single 3.3 V
programming voltage for the VPUMP pin during programming. When the device is not being
programmed, the VPUMP pin can be left floating or can be tied (pulled up) to any voltage between 0 V
and 3.6 V2. During programming, the target board or the FlashPro4/3/3X programmer can provide
VPUMP. FlashPro4/3/3X is capable of supplying VPUMP to a single device. If more than one device is to
be programmed using FlashPro4/3/3X on a given board, FlashPro4/3/3X should not be relied on to
supply the VPUMP voltage. A FlashPro4/3/3X programmer is not capable of providing reliable VJTAG
voltage. The board must supply VJTAG voltage to the device and the VJTAG pin of the programmer
header must be connected to the device VJTAG pin. Microsemi recommends that VPUMP3 and VJTAG
power supplies be kept separate with independent filtering capacitors rather than supplying them from a
common rail. Refer to the "Board-Level Considerations" section on page 271 for capacitor requirements.
Low power flash device I/Os support a bank-based, voltage-supply architecture that simultaneously
supports multiple I/O voltage standards (Table 12-2). By isolating the JTAG power supply in a separate
bank from the user I/Os, low power flash devices provide greater flexibility with supply selection and
simplify power supply and printed circuit board (PCB) design. The JTAG pins can be run at any voltage
from 1.5 V to 3.3 V (nominal). Microsemi recommends that TCK be tied to GND through a 200 ohm to 1
Kohm resistor. This prevents a possible totempole current on the input buffer stage. For TDI, TMS, and
TRST pins, the devices provide an internal nominal 10 Kohm pull-up resistor. During programming, all
I/O pins, except for JTAG interface pins, are tristated and weakly pulled up to VCCI. This isolates the part
and prevents the signals from floating. The JTAG interface pins are driven by the FlashPro4/3/3X during
programming, including the TRST pin, which is driven HIGH.
Table 12-2 • Power Supplies
Current during
Power Supply Programming Mode Programming
VCC 1.2 V / 1.5 V < 70 mA
VCCI 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V I/Os are weakly pulled up.
(bank-selectable)
VJTAG 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V < 20 mA
VPUMP 3.15 V to 3.45 V < 80 mA
Note: All supply voltages should be at 1.5 V or higher, regardless of the setting during normal
operation, except for IGLOO nano, where 1.2 V VCC and VJTAG programming is allowed.

Nonvolatile Memory (NVM) Programming Voltage

SmartFusion and Fusion devices need stable VCCNVM/VCCENVM3 (1.5 V power supply to the
embedded nonvolatile memory blocks) and VCCOSC/VCCROSC4 (3.3 V power supply to the integrated
RC oscillator). The tolerance of VCCNVM/VCCENVM is ± 5% and VCCOSC/VCCROSC is ± 5%.
Unstable supply voltage on these pins can cause an NVM programming failure due to NVM page
corruption. The NVM page can also be corrupted if the NVM reset pin has noise. This signal must be tied
off properly.
Microsemi recommends installing the following capacitors5 on the VCCNVM/VCCENVM and
VCCOSC/VCCROSC pins:
• Add one bypass capacitor of 10 µF for each power supply plane followed by an array of
decoupling capacitors of 0.1 µF.
• Add one 0.1 µF capacitor near each pin.

2. During sleep mode in IGLOO devices connect VPUMP to GND.

3. VPUMP has to be quiet for successful programming. Therefore VPUMP must be separate and required capacitors must be
installed close to the FPGA VPUMP pin.
4. VCCROSC is for SmartFusion.
5. The capacitors cannot guarantee reliable operation of the device if the board layout is not done properly.

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IEEE 1532 (JTAG) Interface

The supported industry-standard IEEE 1532 programming interface builds on the IEEE 1149.1 (JTAG)
standard. IEEE 1532 defines the standardized process and methodology for ISP. Both silicon and
software issues are addressed in IEEE 1532 to create a simplified ISP environment. Any IEEE 1532
compliant programmer can be used to program low power flash devices. Device serialization is not
supported when using the IEEE1532 standard. Refer to the standard for detailed information about IEEE
1532.

Security
Unlike SRAM-based FPGAs that require loading at power-up from an external source such as a
microcontroller or boot PROM, Microsemi nonvolatile devices are live at power-up, and there is no
bitstream required to load the device when power is applied. The unique flash-based architecture
prevents reverse engineering of the programmed code on the device, because the programmed data is
stored in nonvolatile memory cells. Each nonvolatile memory cell is made up of small capacitors and any
physical deconstruction of the device will disrupt stored electrical charges.
Each low power flash device has a built-in 128-bit Advanced Encryption Standard (AES) decryption core,
except for the 30 k gate devices and smaller. Any FPGA core or FlashROM content loaded into the
device can optionally be sent as encrypted bitstream and decrypted as it is loaded. This is particularly
suitable for applications where device updates must be transmitted over an unsecured network such as
the Internet. The embedded AES decryption core can prevent sensitive data from being intercepted
(Figure 12-1 on page 265). A single 128-bit AES Key (32 hex characters) is used to encrypt FPGA core
programming data and/or FlashROM programming data in the Microsemi tools. The low power flash
devices also decrypt with a single 128-bit AES Key. In addition, low power flash devices support a
Message Authentication Code (MAC) for authentication of the encrypted bitstream on-chip. This allows
the encrypted bitstream to be authenticated and prevents erroneous data from being programmed into
the device. The FPGA core, FlashROM, and Flash Memory Blocks (FBs), in Fusion only, can be updated
independently using a programming file that is AES-encrypted (cipher text) or uses plain text.

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Security in ARM-Enabled Low Power Flash Devices

There are slight differences between the regular flash device and the ARM-enabled flash devices, which
have the M1 prefix.
The AES key is used by Microsemi and preprogrammed into the device to protect the ARM IP. As a
result, the design will be encrypted along with the ARM IP, according to the details below.

Cortex-M1 and Cortex-M3 Device Security

Cortex-M1–enabled and Cortex-M3 devices are shipped with the following security features:
• FPGA array enabled for AES-encrypted programming and verification
• FlashROM enabled for AES-encrypted write and verify
• Embedded Flash Memory enabled for AES encrypted write

Flash Device

MAC
Designer User Encryption AES Key Validation
Software
Decrypted
Programming Bitstream
File Generation FPGA Core,
with AES FlashROM,
Encryption AES FBs
Decryption

Transmit Medium /
Public Network
Encrypted Bistream

Figure 12-1 • AES-128 Security Features

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Figure 12-2 shows different applications for ISP programming.

1. In a trusted programming environment, you can program the device using the unencrypted
(plaintext) programming file.
2. You can program the AES Key in a trusted programming environment and finish the final
programming in an untrusted environment using the AES-encrypted (cipher text) programming
file.
3. For the remote ISP updating/reprogramming, the AES Key stored in the device enables the
encrypted programming bitstream to be transmitted through the untrusted network connection.
Microsemi low power flash devices also provide the unique Microsemi FlashLock feature, which protects
the Pass Key and AES Key. Unless the original FlashLock Pass Key is used to unlock the device,
security settings cannot be modified. Microsemi does not support read-back of FPGA core-programmed
data; however, the FlashROM contents can selectively be read back (or disabled) via the JTAG port
based on the security settings established by the Microsemi Designer software. Refer to the "Security in
Low Power Flash Devices" section on page 235 for more information.

Source AES
Plain Text Encryption

Source
Encrypted Bitstream

TCP/IP
Option 1

Option 2

Option 3

AES
FlashROM
Decryption

FPGA
Core

IGLOO or ProASIC3 Device

Figure 12-2 • Different ISP Use Models

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FlashROM and Programming Files

Each low power flash device has 1 kbit of on-chip, nonvolatile flash memory that can be accessed from
the FPGA core. This nonvolatile FlashROM is arranged in eight pages of 128 bits (Figure 12-3). Each
page can be programmed independently, with or without the 128-bit AES encryption. The FlashROM can
only be programmed via the IEEE 1532 JTAG port and cannot be programmed from the FPGA core. In
addition, during programming of the FlashROM, the FPGA core is powered down automatically by the
on-chip programming control logic.

Byte Number in Page

15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
7
6
Page Number

5
4
3
2
1
0

Figure 12-3 • FlashROM Architecture

When using FlashROM combined with AES, many subscription-based applications or device
serialization applications are possible. The FROM configurator found in the Libero SoC Catalog supports
easy management of the FlashROM contents, even over large numbers of devices. The FROM
configurator can support FlashROM contents that contain the following:
• Static values
• Random numbers
• Values read from a file
• Independent updates of each page
In addition, auto-incrementing of fields is possible. In applications where the FlashROM content is
different for each device, you have the option to generate a single STAPL file for all the devices or
individual serialization files for each device. For more information on how to generate the FlashROM
content for device serialization, refer to the "FlashROM in Microsemi’s Low Power Flash Devices" section
on page 117.
Libero SoC includes a unique tool to support the generation and management of FlashROM and FPGA
programming files. This tool is called FlashPoint.
Depending on the applications, designers can use the FlashPoint software to generate a STAPL file with
different contents. In each case, optional AES encryption and/or different security settings can be set.
In Designer, when you click the Programming File icon, FlashPoint launches, and you can generate
STAPL file(s) with four different cases (Figure 12-4 on page 268). When the serialization feature is used
during the configuration of FlashROM, you can generate a single STAPL file that will program all the
devices or an individual STAPL file for each device.
The following cases present the FPGA core and FlashROM programming file combinations that can be
used for different applications. In each case, you can set the optional security settings (FlashLock Pass
Key and/or AES Key) depending on the application.
1. A single STAPL file or multiple STAPL files with multiple FlashROM contents and the FPGA core
content. A single STAPL file will be generated if the device serialization feature is not used. You
can program the whole FlashROM or selectively program individual pages.
2. A single STAPL file for the FPGA core content

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3. A single STAPL file or multiple STAPL files with multiple FlashROM contents. A single STAPL file
will be generated if the device serialization feature is not used. You can program the whole
FlashROM or selectively program individual pages.
4. A single STAPL file to configure the security settings for the device, such as the AES Key and/or
Pass Key.

Libero SoC
Designer Software Suite Catalog

Netlist

Programming FlashROM
File Configuration
(FlashPoint) File (*.ufc)

1 2 3 4

Security Security Security Security

Settings Settings Settings Settings

Single/Multiple Single/Multiple
FlashROM FPGA Core FlashROM
Content(s) Content
Content(s)

FPGA Core
Content

Figure 12-4 • Flexible Programming File Generation for Different Applications

Programming Solution
For device programming, any IEEE 1532–compliant programmer can be used; however, the
FlashPro4/3/3X programmer must be used to control the low power flash device's rich security features
and FlashROM programming options. The FlashPro4/3/3X programmer is a low-cost portable
programmer for the Microsemi flash families. It can also be used with a powered USB hub for parallel
programming. General specifications for the FlashPro4/3/3X programmer are as follows:
• Programming clock – TCK is used with a maximum frequency of 20 MHz, and the default
frequency is 4 MHz.
• Programming file – STAPL
• Daisy chain – Supported. You can use the ChainBuilder software to build the programming file for
the chain.
• Parallel programming – Supported. Multiple FlashPro4/3/3X programmers can be connected
together using a powered USB hub or through the multiple USB ports on the PC.
• Power supply – The target board must provide VCC, VCCI, VPUMP, and VJTAG during
programming. However, if there is only one device on the target board, the FlashPro4/3/3X
programmer can generate the required VPUMP voltage from the USB port.

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ISP Programming Header Information

The FlashPro4/3/3X programming cable connector can be connected with a 10-pin, 0.1"-pitch
programming header. The recommended programming headers are manufactured by AMP (103310-1)
and 3M (2510-6002UB). If you have limited board space, you can use a compact programming header
manufactured by Samtec (FTSH-105-01-L-D-K). Using this compact programming header, you are
required to order an additional header adapter manufactured by Microsemi SoC Products Group (FP3-
10PIN-ADAPTER-KIT).
Existing ProASICPLUS family customers who are using the Samtec Small Programming Header
(FTSH-113-01-L-D-K) and are planning to migrate to IGLOO or ProASIC3 devices can also use
FP3-10PIN-ADAPTER-KIT.

Table 12-3 • Programming Header Ordering Codes

Manufacturer Part Number Description
AMP 103310-1 10-pin, 0.1"-pitch cable header (right-angle PCB mount
angle)
3M 2510-6002UB 10-pin, 0.1"-pitch cable header (straight PCB mount
angle)
Samtec FTSH-113-01-L-D-K Small programming header supported by FlashPro and
Silicon Sculptor
Samtec FTSH-105-01-L-D-K Compact programming header
Samtec FFSD-05-D-06.00-01-N 10-pin cable with 50 mil pitch sockets; included in FP3-
10PIN-ADAPTER-KIT.
Microsemi FP3-10PIN-ADAPTER-KIT Transition adapter kit to allow FP3 to be connected to a
micro 10-pin header (50 mil pitch). Includes a 6 inch
Samtec FFSD-05-D-06.00-01-N cable in the kit. The
transition adapter board was previously offered as
FP3-26PIN-ADAPTER and includes a 26-pin adapter for
design transitions from ProASICPLUS based boards to
ProASIC3 based boards.

TCK 1 2 GND
TDO 3 4 NC (FlashPro3/3X); Prog_Mode* (FlashPro4)
TMS 5 6 VJTAG
VPUMP 7 8 TRST
TDI 9 10 GND

Note: *Prog_Mode on FlashPro4 is an output signal that goes High during device programming and
returns to Low when programming is complete. This signal can be used to drive a system to provide
a 1.5 V programming signal to IGLOO nano, ProASIC3L, and RT ProASIC3 devices that can run
with 1.2 V core voltage but require 1.5 V for programming. IGLOO nano V2 devices can be
programmed at 1.2 V core voltage (when using FlashPro4 only), but IGLOO nano V5 devices are
programmed with a VCC core voltage of 1.5 V.
Figure 12-5 • Programming Header (top view)

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Table 12-4 • Programming Header Pin Numbers and Description

Pin Signal Source Description
1 TCK Programmer JTAG Clock
2 GND1 – Signal Reference
3 TDO Target Board Test Data Output
4 NC – No Connect (FlashPro3/3X); Prog_Mode (FlashPro4).
See note associated with Figure 12-5 on page 269
regarding Prog_Mode on FlashPro4.
5 TMS Programmer Test Mode Select
6 VJTAG Target Board JTAG Supply Voltage
2
7 VPUMP Programmer/Target Board Programming Supply Voltage
8 nTRST Programmer JTAG Test Reset (Hi-Z with 10 kΩ pull-down, HIGH,
LOW, or toggling)
9 TDI Programmer Test Data Input
1
10 GND – Signal Reference
Notes:
1. Both GND pins must be connected.
2. FlashPro4/3/3X can provide VPUMP if there is only one device on the target board.

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Board-Level Considerations
A bypass capacitor is required from VPUMP to GND for all low power flash devices during programming.
This bypass capacitor protects the devices from voltage spikes that may occur on the VPUMP supplies
during the erase and programming cycles. Refer to the "Pin Descriptions and Packaging" chapter of the
appropriate device datasheet for specific recommendations. For proper programming, 0.01 µF and 0.33
µF capacitors (both rated at 16 V) are to be connected in parallel across VPUMP and GND, and
positioned as close to the FPGA pins as possible. The bypass capacitor must be placed within 2.5 cm of
the device pins.

VJTAG from the target board

VCCI from the target board
VCC from the target board

VCC
VCCI Polarizing Notch
VJTAG

Low Power GND

Flash Device TCK 1 TCK 2 GND
TDO 3 TDO 4 NC*
TMS 5 TMS 6 VJTAG
VPUMP 7 VPUMP 8 TRST
TDI 9 TDI 10 GND
TRST
C1 C2

R R

Note: *NC (FlashPro3/3X); Prog_Mode (FlashPro4). Prog_Mode on FlashPro4 is an output signal that goes High during
device programming and returns to Low when programming is complete. This signal can be used to drive a
system to provide a 1.5 V programming signal to IGLOO nano, ProASIC3L, and RT ProASIC3 devices that can
run with 1.2 V core voltage but require 1.5 V for programming. IGLOO nano V2 devices can be programmed at
1.2 V core voltage (when using FlashPro4 only), but IGLOO nano V5 devices are programmed with a VCC core
voltage of 1.5 V.
Figure 12-6 • Board Layout and Programming Header Top View

Troubleshooting Signal Integrity

Symptoms of a Signal Integrity Problem
A signal integrity problem can manifest itself in many ways. The problem may show up as extra or
dropped bits during serial communication, changing the meaning of the communication. There is a
normal variation of threshold voltage and frequency response between parts even from the same lot.
Because of this, the effects of signal integrity may not always affect different devices on the same board
in the same way. Sometimes, replacing a device appears to make signal integrity problems go away, but
this is just masking the problem. Different parts on identical boards will exhibit the same problem sooner
or later. It is important to fix signal integrity problems early. Unless the signal integrity problems are
severe enough to completely block all communication between the device and the programmer, they
may show up as subtle problems. Some of the FlashPro4/3/3X exit codes that are caused by signal
integrity problems are listed below. Signal integrity problems are not the only possible cause of these

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errors, but this list is intended to show where problems can occur. FlashPro4/3/3X allows TCK to be
lowered from 6 MHz down to 1 MHz to allow you to address some signal integrity problems that may
occur with impedance mismatching at higher frequencies. Customers are expected to troubleshoot
board-level signal integrity issues by measuring voltages and taking scope plots.
Scan Chain Failure
Normally, the FlashPro4/3/3X Scan Chain command expects to see 0x1 on the TDO pin. If the command
reports reading 0x0 or 0x3, it is seeing the TDO pin stuck at 0 or 1. The only time the TDO pin comes out
of tristate is when the JTAG TAP state machine is in the Shift-IR or Shift-DR state. If noise or reflections
on the TCK or TMS lines have disrupted the correct state transitions, the device's TAP state controller
might not be in one of these two states when the programmer tries to read the device. When this
happens, the output is floating when it is read and does not match the expected data value. This can also
be caused by a broken TDO net. Only a small amount of data is read from the device during the Scan
Chain command, so marginal problems may not always show up during this command. Occasionally a
faulty programmer can cause intermittent scan chain failures.
Exit 11
This error occurs during the verify stage of programming a device. After programming the design into the
device, the device is verified to ensure it is programmed correctly. The verification is done by shifting the
programming data into the device. An internal comparison is performed within the device to verify that all
switches are programmed correctly. Noise induced by poor signal integrity can disrupt the writes and
reads or the verification process and produce a verification error. While technically a verification error, the
root cause is often related to signal integrity.
Refer to the FlashPro User's Guide for other error messages and solutions. For the most up-to-date
known issues and solutions, refer to http://www.microsemi.com/soc/support.

Conclusion
IGLOO, ProASIC3, SmartFusion, and Fusion devices offer a low-cost, single-chip solution that is live at
power-up through nonvolatile flash technology. The FlashLock Pass Key and 128-bit AES Key security
features enable secure ISP in an untrusted environment. On-chip FlashROM enables a host of new
applications, including device serialization, subscription-based applications, and IP addressing.
Additionally, as the FlashROM is nonvolatile, all of these services can be provided without battery
backup.

Related Documents

User’s Guides
FlashPro User's Guide
http://www.microsemi.com/soc/documents/flashpro_ug.pdf

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List of Changes
The following table lists critical changes that were made in each revision of the chapter.

Date Changes Page

August 2012 This chapter will now be published standalone as an application note in addition to N/A
being part of the IGLOO/ProASIC3/Fusion FPGA fabric user’s guides (SAR 38769).
The "ISP Programming Header Information" section was revised to update the 269
description of FP3-10PIN-ADAPTER-KIT in Table 12-3 • Programming Header
Ordering Codes, clarifying that it is the adapter kit used for ProASICPLUS based
boards, and also for ProASIC3 based boards where a compact programming
header is being used (SAR 36779).
June 2011 The VPUMP programming mode voltage was corrected in Table 12-2 • Power 263
Supplies. The correct value is 3.15 V to 3.45 V (SAR 30668).
The notes associated with Figure 12-5 • Programming Header (top view) and 269, 271
Figure 12-6 • Board Layout and Programming Header Top View were revised to
make clear the fact that IGLOO nano V2 devices can be programmed at 1.2 V (SAR
30787).
Figure 12-6 • Board Layout and Programming Header Top View was revised to 271
include resistors tying TCK and TRST to GND. Microsemi recommends tying off
TCK and TRST to GND if JTAG is not used (SAR 22921). RT ProASIC3 was added
to the list of device families.
In the "ISP Programming Header Information" section, the kit for adapting 269
ProASICPLUS devices was changed from FP3-10PIN-ADAPTER-KIT to FP3-26PIN-
ADAPTER-KIT (SAR 20878).
July 2010 This chapter is no longer published separately with its own part number and version N/A
but is now part of several FPGA fabric user’s guides.
References to FlashPro4 and FlashPro3X were added to this chapter, giving N/A
distinctions between them. References to SmartGen were deleted and replaced
with Libero IDE Catalog.
The "ISP Architecture" section was revised to indicate that V2 devices can be 261
programmed at 1.2 V VCC with FlashPro4.
SmartFusion was added to Table 12-1 • Flash-Based FPGAs Supporting ISP. 262
The "Programming Voltage (VPUMP) and VJTAG" section was revised and 1.2 V 263
was added to Table 12-2 • Power Supplies.
The "Nonvolatile Memory (NVM) Programming Voltage" section is new. 263
Cortex-M3 was added to the "Cortex-M1 and Cortex-M3 Device Security" section. 265
In the "ISP Programming Header Information" section, the additional header 269
adapter ordering number was changed from FP3-26PIN-ADAPTER to FP3-10PIN-
ADAPTER-KIT, which contains 26-pin migration capability.
The description of NC was updated in Figure 12-5 • Programming Header (top 269, 270
view), Table 12-4 • Programming Header Pin Numbers and Description and
Figure 12-6 • Board Layout and Programming Header Top View.
The "Symptoms of a Signal Integrity Problem" section was revised to add that 271
customers are expected to troubleshoot board-level signal integrity issues by
measuring voltages and taking scope plots. "FlashPro4/3/3X allows TCK to be
lowered from 6 MHz down to 1 MHz to allow you to address some signal integrity
problems" formerly read, "from 24 MHz down to 1 MHz." "The Scan Chain
command expects to see 0x2" was changed to 0x1.

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Date Changes Page

July 2010 The "Chain Integrity Test Error Analyze Chain Failure" section was renamed to the 272
(continued) "Scan Chain Failure" section, and the Analyze Chain command was changed to
Scan Chain. It was noted that occasionally a faulty programmer can cause scan
chain failures.
v1.5 The "CoreMP7 Device Security" section was removed from "Security in ARM- 265
(August 2009) Enabled Low Power Flash Devices", since M7-enabled devices are no longer
supported.
v1.4 The "ISP Architecture" section was revised to include information about core 261
(December 2008) voltage for IGLOO V2 and ProASIC3L devices, as well as 50 mV increments
allowable in Designer software.
IGLOO nano and ProASIC3 nano devices were added to Table 12-1 • Flash-Based 262
FPGAs Supporting ISP.
A second capacitor was added to Figure 12-6 • Board Layout and Programming 271
Header Top View.
v1.3 The "ISP Support in Flash-Based Devices" section was revised to include new 262
(October 2008) families and make the information more concise.
v1.2 The following changes were made to the family descriptions in Table 12-1 • Flash- 262
(June 2008) Based FPGAs Supporting ISP:
• ProASIC3L was updated to include 1.5 V.
• The number of PLLs for ProASIC3E was changed from five to six.
v1.1 The "ISP Architecture" section was updated to included the IGLOO PLUS family in 261
(March 2008) the discussion of family-specific support. The text, "When 1.2 V is used, the device
can be reprogrammed in-system at 1.5 V only," was revised to state, "Although the
device can operate at 1.2 V core voltage, the device can only be reprogrammed
when all supplies (VCC, VCCI, and VJTAG) are at 1.5 V."
The "ISP Support in Flash-Based Devices" section and Table 12-1 • Flash-Based 262
FPGAs Supporting ISP were updated to include the IGLOO PLUS family. The
"IGLOO Terminology" section and "ProASIC3 Terminology" section are new.
The "Security" section was updated to mention that 15 k gate devices do not have a 264
built-in 128-bit decryption core.
Table 12-2 • Power Supplies was revised to remove the Normal Operation column 263
and add a table note stating, "All supply voltages should be at 1.5 V or higher,
regardless of the setting during normal operation."
The "ISP Programming Header Information" section was revised to change 269
FP3-26PIN-ADAPTER to FP3-10PIN-ADAPTER-KIT. Table 12-3 • Programming
Header Ordering Codes was updated with the same change, as well as adding the
part number FFSD-05-D-06.00-01-N, a 10-pin cable with 50-mil-pitch sockets.
The "Board-Level Considerations" section was updated to describe connecting two 271
capacitors in parallel across VPUMP and GND for proper programming.
v1.0 Information was added to the "Programming Voltage (VPUMP) and VJTAG" section 263
(January 2008) about the JTAG interface pin.
51900055-2/7.06 ACTgen was changed to SmartGen. N/A
In Figure 12-6 • Board Layout and Programming Header Top View, the order of the 271
text was changed to:
VJTAG from the target board
VCCI from the target board
VCC from the target board

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ProASIC3L In-System Programming

Introduction
The IGLOO® and ProASIC®3L families offer devices that can be powered by either 1.5 V or, in the case
of V2 devices, a core supply voltage anywhere in the range of 1.2 V to 1.5 V, in 50 mV increments.
Since IGLOO and ProASIC3L devices are flash-based, they can be programmed and reprogrammed
multiple times in-system using Microsemi FlashPro3. FlashPro3 uses the JTAG standard interface (IEEE
1149.1) and STAPL file (defined in JESD 71 to support programming of programmable devices using
IEEE 1149.1) for in-system configuration/programming (IEEE 1532) of a device. Programming can also
be executed by other methods, such as an embedded microcontroller that follows the same standards
above.
All IGLOO and ProASIC3L devices must be programmed with the VCC core voltage at 1.5 V. Therefore,
applications using IGLOO or ProASIC3L devices powered by a 1.2 V supply must switch the core supply
to 1.5 V for in-system programming.
The purpose of this document is to describe an easy-to-use and cost-effective solution for switching the
core supply voltage from 1.2 V to 1.5 V during in-system programming for IGLOO and ProASIC3L
devices.

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Microsemi’s Flash Families Support Voltage Switching Circuit

The flash FPGAs listed in Table 13-1 support the voltage switching circuit feature and the functions
described in this document.
Table 13-1 • Flash-Based FPGAs Supporting Voltage Switching Circuit
Series Family* Description
IGLOO IGLOO Ultra-low power 1.2 V to 1.5 V FPGAs with Flash*Freeze technology
IGLOOe Higher density IGLOO FPGAs with six PLLs and additional I/O standards
IGLOO nano The industry’s lowest-power, smallest-size solution
IGLOO PLUS IGLOO FPGAs with enhanced I/O capabilities
ProASIC3 ProASIC3L ProASIC3 FPGAs supporting 1.2 V to 1.5 V with Flash*Freeze technology
RT ProASIC3 Radiation-tolerant RT3PE600L and RT3PE3000L
Military ProASIC3/EL Military temperature A3PE600L, A3P1000, and A3PE3000L
Note: *The device names link to the appropriate datasheet, including product brief, DC and switching characteristics,
and packaging information.

IGLOO Terminology
In documentation, the terms IGLOO series and IGLOO devices refer to all of the IGLOO devices as listed
in Table 13-1. Where the information applies to only one product line or limited devices, these exclusions
will be explicitly stated.

ProASIC3 Terminology
In documentation, the terms ProASIC3 series and ProASIC3 devices refer to all of the ProASIC3 devices
as listed in Table 13-1. Where the information applies to only one product line or limited devices, these
exclusions will be explicitly stated.
To further understand the differences between the IGLOO and ProASIC3 devices, refer to the Industry’s
Lowest Power FPGAs Portfolio.

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Circuit Description
All IGLOO devices as well as the ProASIC3L product family are available in two versions: V5 devices,
which are powered by a 1.5 V supply and V2 devices, which are powered by a supply anywhere in the
range of 1.2 V to 1.5 V in 50 mV increments. Applications that use IGLOO or ProASIC3L devices
powered by a 1.2 V core supply must have a mechanism that switches the core voltage from 1.2 V (or
other voltage below 1.5 V) to 1.5 V during in-system programming (ISP). There are several possible
techniques to meet this requirement. Microsemi recommends utilizing a linear voltage regulator, a
resistor voltage divider, and an N-Channel Digital FET to set the appropriate VCC voltage, as shown in
Figure 13-1.
Where 1.2 V is mentioned in the following text, the meaning applies to any voltage below the 1.5 V
range. Resistor values in the figures have been calculated for 1.2 V, so refer to power regulator
datasheets if a different core voltage is required.
The main component of Microsemi's recommended circuit is the LTC3025 linear voltage regulator from
LinearTech. The output voltage of the LTC3025 on the OUT pin is set by the ratio of two external
resistors, R37 and R38, in a voltage divider. The linear voltage regulator adjusts the voltage on the OUT
pin to maintain the ADJ pin voltage at 0.4 V (referenced to ground). By using an R38 value of 40.2 kΩ
and an R37 value of 80.6 kΩ, the output voltage on the OUT pin is 1.2 V. To achieve 1.5 V on the OUT
pin, R44 can be used in parallel with R38. The OUT pin can now be used as a switchable source for the
VCC supply. Refer to the LTC3025 Linear Voltage Regulator datasheet for more information.
In Figure 13-1, the N-Channel Digital FET is used to enable and disable R44. This FET is controlled by
the JTAG TRST signal driven by the FlashPro3 programmer. During programming of the device, the
TRST signal is driven HIGH by the FlashPro3, and turns the N-Channel Digital FET ON. When the FET is
ON, R44 becomes enabled as a parallel resistance to R38, which forces the regulator to set OUT to
1.5 V.
When the FlashPro3 is connected and not in programming mode or when it is not connected, the pull-
down resistor, R10, will pull the TRST signal LOW. When this signal is LOW, the N-Channel Digital FET
is "open" and R44 is not part of the resistance seen by the LTC3025. The new resistance momentarily
changes the voltage value on the ADJ pin, which in turn causes the output of the LTC3025 to
compensate by setting OUT to 1.2 V. Now the device will run in regular active mode at the regular 1.2 V
core voltage.

Figure 13-1 • Circuit Diagram

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Circuit Verification
The power switching circuit recommended above is implemented on Microsemi's Icicle board
(Figure 13-2). On the Icicle board, VJTAGENB is used to control the N-Channel Digital FET; however,
this circuit was modified to use TRST instead of VJTAGENB in this application. There are three important
aspects of this circuit that were verified:
1. The rise on VCC from 1.2 V to 1.5 V when TRST is HIGH
2. VCC rises to 1.5 V before programming begins.
3. VCC switches from 1.5 V to 1.2 V when TRST is LOW.

Verification Steps
1. The rise on VCC from 1.2 V to 1.5 V when TRST is HIGH.

VCC Signal

TRST Signal

Figure 13-2 • Core Voltage on the IGLOO AGL125-QNG132 Device

In the oscilloscope plots (Figure 13-2), the TRST from FlashPro3 and the VCC core voltage of the
IGLOO device are labeled. This plot shows the rise characteristic of the TRST signal from FlashPro3.
Once the TRST signal is asserted HIGH, the LTC3025 shown in Figure 13-1 on page 277 senses the
increase in voltage and changes the output from 1.2 V to 1.5 V. It takes the circuit approximately 100 µs
to respond to TRST and change the voltage to 1.5 V on the VCC core.

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2. VCC rises to 1.5 V before programming begins.

TMS Signal Green

Floating Signal TDI/TMS

VCC Core Voltage

TRST Signal (purple) TDI Signal (yellow)

Figure 13-3 • Programming Algorithm

The oscilloscope plot in Figure 13-3 shows a wider time interval for the programming algorithm and
includes the TDI and TMS signals from the FlashPro3. These signals carry the programming information
that is programmed into the device and should only start toggling after the VCC core voltage reaches 1.5
V. Again, TRST from FlashPro3 and the VCC core voltage of the IGLOO device are labeled. As shown in
Figure 13-3, TDI and TMS are floating initially, and the core voltage is 1.2 V. When a programming
command on the FlashPro3 is executed, TRST is driven HIGH and TDI is momentarily driven to ground.
In response to the HIGH TRST signal, the circuit responds and pulls the core voltage to 1.5 V. After
100 ms, TRST is briefly driven LOW by the FlashPro software. This is expected behavior that ensures
the device JTAG state machine is in Reset prior to programming. TRST remains HIGH for the duration of
the programming. It can be seen in Figure 13-3 that the VCC core voltage signal remains at 1.5 V for
approximately 50 ms before information starts passing through on TDI and TMS. This confirms that the
voltage switching circuit drives the VCC core supply voltage to 1.5 V prior to programming.

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3. VCC switches from 1.5 V to 1.2 V when TRST is LOW.

TRST Signal

VCC Core Signal

Figure 13-4 • TRST Toggled LOW

In Figure 13-4, the TRST signal and the VCC core voltage signal are labeled. As TRST is pulled to
ground, the core voltage is observed to switch from 1.5 V to 1.2 V. The observed fall time is
approximately 2 ms.

DirectC
The above analysis is based on FlashPro3, but there are other solutions to ISP, such as DirectC. DirectC
is a microprocessor program that can be run in-system to program Microsemi flash devices. For
FlashPro3, TRST is the most convenient control signal to use for the recommended circuit. However, for
DirectC, users may use any signal to control the FET. For example, the DirectC code can be edited so
that a separate non-JTAG signal can be asserted from the microcontroller that signals the board that it is
about to start programming the device. After asserting the N-Channel Digital FET control signal, the
programming algorithm must allow sufficient time for the supply to rise to 1.5 V before initiating DirectC
programming. As seen in Figure 13-3 on page 279, 50 ms is adequate time. Depending on the size of
the PCB and the capacitance on the VCC supply, results may vary from system to system. Microsemi
recommends using a conservative value for the wait time to make sure that the VCC core voltage is at
the right level.

Conclusion
For applications using IGLOO and ProASIC3L low power FPGAs and taking advantage of the low core
voltage power supplies with less than 1.5 V operation, there must be a way for the core voltage to switch
from 1.2 V (or other voltage) to 1.5 V, which is required during in-system programming. The circuit
explained in this document illustrates one simple, cost-effective way of handling this requirement. A
JTAG signal from the FlashPro3 programmer allows the circuit to sense when programming is in
progress, enabling it to switch to the correct core voltage.

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List of Changes
The following table lists critical changes that were made in each revision of the chapter.

Date Changes Page

July 2010 This chapter is no longer published separately with its own part number and version N/A
but is now part of several FPGA fabric user’s guides.
v1.1 The "Introduction" was revised to include information about the core supply voltage 275
(October 2008) range of operation in V2 devices.
IGLOO nano device support was added to Table 13-1 • Flash-Based FPGAs 276
Supporting Voltage Switching Circuit.
The "Circuit Description" section was updated to include IGLOO PLUS core 277
operation from 1.2 V to 1.5 V in 50 mV increments.
v1.0 The "Microsemi’s Flash Families Support Voltage Switching Circuit" section was 276
(August 2008) revised to include new families and make the information more concise.

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14 – Microprocessor Programming of Microsemi’s
Low Power Flash Devices

Introduction
The Fusion, IGLOO, and ProASIC3 families of flash FPGAs support in-system programming (ISP) with
the use of a microprocessor. Flash-based FPGAs store their configuration information in the actual cells
within the FPGA fabric. SRAM-based devices need an external configuration memory, and hybrid
nonvolatile devices store the configuration in a flash memory inside the same package as the SRAM
FPGA. Since the programming of a true flash FPGA is simpler, requiring only one stage, it makes sense
that programming with a microprocessor in-system should be simpler than with other SRAM FPGAs.
This reduces bill-of-materials costs and printed circuit board (PCB) area, and increases system reliability.
Nonvolatile flash technology also gives the low power flash devices the advantage of a secure, low
power, live-at-power-up, and single-chip solution. Low power flash devices are reprogrammable and offer
time-to-market benefits at an ASIC-level unit cost. These features enable engineers to create high-
density systems using existing ASIC or FPGA design flows and tools.
This document is an introduction to microprocessor programming only. To explain the difference between
the options available, user's guides for DirectC and STAPL provide more detail on implementing each
style.

Microprocessor
On-Board
Internal/External
Memory
Memory Running Internal RAM Device
DirectC
.dat file

I/O Functions

JTAG Bus

Flash
Device

Figure 14-1 • ISP Using Microprocessor

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Microprocessor Programming Support in Flash Devices

The flash-based FPGAs listed in Table 14-1 support programming with a microprocessor and the
functions described in this document.

Table 14-1 • Flash-Based FPGAs

Series Family* Description
IGLOO IGLOO Ultra-low power 1.2 V to 1.5 V FPGAs with Flash*Freeze technology
IGLOOe Higher density IGLOO FPGAs with six PLLs and additional I/O standards
IGLOO nano The industry’s lowest-power, smallest-size solution
IGLOO PLUS IGLOO FPGAs with enhanced I/O capabilities
ProASIC3 ProASIC3 Low power, high-performance 1.5 V FPGAs
ProASIC3E Higher density ProASIC3 FPGAs with six PLLs and additional I/O standards
ProASIC3 nano Lowest-cost solution with enhanced I/O capabilities
ProASIC3L ProASIC3 FPGAs supporting 1.2 V to 1.5 V with Flash*Freeze technology
RT ProASIC3 Radiation-tolerant RT3PE600L and RT3PE3000L
Military ProASIC3/EL Military temperature A3PE600L, A3P1000, and A3PE3000L
Automotive ProASIC3 ProASIC3 FPGAs qualified for automotive applications
Fusion Fusion Mixed signal FPGA integrating ProASIC3 FPGA fabric, programmable
analog block, support for ARM® Cortex™-M1 soft processors, and flash
memory into a monolithic device
Note: *The device names link to the appropriate datasheet, including product brief, DC and switching characteristics,
and packaging information.

IGLOO Terminology
In documentation, the terms IGLOO series and IGLOO devices refer to all of the IGLOO devices as listed
in Table 14-1. Where the information applies to only one device or limited devices, these exclusions will
be explicitly stated.

ProASIC3 Terminology
In documentation, the terms ProASIC3 series and ProASIC3 devices refer to all of the ProASIC3 devices
as listed in Table 14-1. Where the information applies to only one device or limited devices, these
exclusions will be explicitly stated.
To further understand the differences between the IGLOO and ProASIC3 devices, refer to the Industry’s
Lowest Power FPGAs Portfolio.

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Programming Algorithm

JTAG Interface
The low power flash families are fully compliant with the IEEE 1149.1 (JTAG) standard. They support all
the mandatory boundary scan instructions (EXTEST, SAMPLE/PRELOAD, and BYPASS) as well as six
optional public instructions (USERCODE, IDCODE, HIGHZ, and CLAMP).

IEEE 1532
The low power flash families are also fully compliant with the IEEE 1532 programming standard. The
IEEE 1532 standard adds programming instructions and associated data registers to devices that comply
with the IEEE 1149.1 standard (JTAG). These instructions and registers extend the capabilities of the
IEEE 1149.1 standard such that the Test Access Port (TAP) can be used for configuration activities. The
IEEE 1532 standard greatly simplifies the programming algorithm, reducing the amount of time needed
to implement microprocessor ISP.

Implementation Overview
To implement device programming with a microprocessor, the user should first download the C-based
STAPL player or DirectC code from the Microsemi SoC Products Group website. Refer to the website for
future updates regarding the STAPL player and DirectC code.
http://www.microsemi.com/soc/download/program_debug/stapl/default.aspx
http://www.microsemi.com/soc/download/program_debug/directc/default.aspx
Using the easy-to-follow user's guide, create the low-level application programming interface (API) to
provide the necessary basic functions. These API functions act as the interface between the
programming software and the actual hardware (Figure 14-2).

Programming
STAPL File Algorithm and Data

STAPL Player or DirectC Programming

Software

API I/O and Memory

Functions

Figure 14-2 • Device Programming Code Relationship

The API is then linked with the STAPL player or DirectC and compiled using the microprocessor's
compiler. Once the entire code is compiled, the user must download the resulting binary into the MCU
system's program memory (such as ROM, EEPROM, or flash). The system is now ready for
programming.
To program a design into the FPGA, the user creates a bitstream or STAPL file using the Microsemi
Designer software, downloads it into the MCU system's volatile memory, and activates the stored
programming binary file (Figure 14-3 on page 286). Once the programming is completed, the bitstream
or STAPL file can be removed from the system, as the configuration profile is stored in the flash FPGA
fabric and does not need to be reloaded at every system power-on.

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Microprocessor Programming of Microsemi’s Low Power Flash Devices

Programming
Software Programming
Source Code File

Microprocessor Compiler

BIN File

Download to System

Program Device

Figure 14-3 • MCU FPGA Programming Model

FlashROM
Microsemi low power flash devices have 1 kbit of user-accessible, nonvolatile, FlashROM on-chip. This
nonvolatile FlashROM can be programmed along with the core or on its own using the standard IEEE
1532 JTAG programming interface.
The FlashROM is architected as eight pages of 128 bits. Each page can be individually programmed
(erased and written). Additionally, on-chip AES security decryption can be used selectively to load data
securely into the FlashROM (e.g., over public or private networks, such as the Internet). Refer to the
"FlashROM in Microsemi’s Low Power Flash Devices" section on page 117.

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STAPL vs. DirectC

Programming the low power flash devices is performed using DirectC or the STAPL player. Both tools
use the STAPL file as an input. DirectC is a compiled language, whereas STAPL is an interpreted
language. Microprocessors will be able to load the FPGA using DirectC much more quickly than STAPL.
This speed advantage becomes more apparent when lower clock speeds of 8- or 16-bit microprocessors
are used. DirectC also requires less memory than STAPL, since the programming algorithm is directly
implemented. STAPL does have one advantage over DirectC—the ability to upgrade. When a new
programming algorithm is required, the STAPL user simply needs to regenerate a STAPL file using the
latest version of the Designer software and download it to the system. The DirectC user must download
the latest version of DirectC from Microsemi, compile everything, and download the result into the system
(Figure 14-4).

STAPL Flow DirectC Flow

Generate the
DirectC Source Code Input STAPL File
New STAPL File

Microprocessor
Download to System
Compiler

Program Device BIN File

Download to System

Program Device

Figure 14-4 • STAPL vs. DirectC

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Microprocessor Programming of Microsemi’s Low Power Flash Devices

Remote Upgrade via TCP/IP

Transmission Control Protocol (TCP) provides a reliable bitstream transfer service between two
endpoints on a network. TCP depends on Internet Protocol (IP) to move packets around the network on
its behalf. TCP protects against data loss, data corruption, packet reordering, and data duplication by
adding checksums and sequence numbers to transmitted data and, on the receiving side, sending back
packets and acknowledging the receipt of data.
The system containing the low power flash device can be assigned an IP address when deployed in the
field. When the device requires an update (core or FlashROM), the programming instructions along with
the new programming data (AES-encrypted cipher text) can be sent over the Internet to the target system
via the TCP/IP protocol. Once the MCU receives the instruction and data, it can proceed with the FPGA
update. Low power flash devices support Message Authentication Code (MAC), which can be used to
validate data for the target device. More details are given in the "Message Authentication Code (MAC)
Validation/Authentication" section.

Hardware Requirement
To facilitate the programming of the low power flash families, the system must have a microprocessor
(with access to the device JTAG pins) to process the programming algorithm, memory to store the
programming algorithm, programming data, and the necessary programming voltage. Refer to the
relevant datasheet for programming voltages.

Security

Encrypted Programming
As an additional security measure, the devices are equipped with AES decryption. AES works in two
steps. The first step is to program a key into the devices in a secure or trusted programming center (such
as Microsemi SoC Products Group In-House Programming (IHP) center). The second step is to encrypt
any programming files with the same encryption key. The encrypted programming file will only work with
the devices that have the same key. The AES used in the low power flash families is the 128-bit AES
decryption engine (Rijndael algorithm).

Message Authentication Code (MAC) Validation/Authentication

As part of the AES decryption flow, the devices are equipped with a MAC validation/authentication
system. MAC is an authentication tag, also called a checksum, derived by applying an on-chip
authentication scheme to a STAPL file as it is loaded into the FPGA. MACs are computed and verified
with the same key so they can only be verified by the intended recipient. When the MCU system receives
the AES-encrypted programming data (cipher text), it can validate the data by loading it into the FPGA
and performing a MAC verification prior to loading the data, via a second programming pass, into the
FPGA core cells. This prevents erroneous or corrupt data from getting into the FPGA.
Low power flash devices with AES and MAC are superior to devices with only DES or 3DES encryption.
Because the MAC verifies the correctness of the data, the FPGA is protected from erroneous loading of
invalid programming data that could damage a device (Figure 14-5 on page 289).
The AES with MAC enables field updates over public networks without fear of having the design stolen.
An encrypted programming file can only work on devices with the correct key, rendering any stolen files

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useless to the thief. To learn more about the low power flash devices’ security features, refer to the
"Security in Low Power Flash Devices" section on page 235.

ProASIC3

MAC
Validation

Designer Software Decrypted Stream

AES KEY

Programming
AES AES Control
Encryption Decryption

TCP/IP
Public Network

Encrypted Stream Encrypted Stream

Figure 14-5 • ProASIC3 Device Encryption Flow

Conclusion
The Fusion, IGLOO, and ProASIC3 FPGAs are ideal for applications that require field upgrades. The
single-chip devices save board space by eliminating the need for EEPROM. The built-in AES with MAC
enables transmission of programming data over any network without fear of design theft. Fusion, IGLOO,
and ProASIC3 FPGAs are IEEE 1532–compliant and support STAPL, making the target programming
software easy to implement.

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List of Changes
The following table lists critical changes that were made in each revision of the chapter.

Date Changes Page

September 2012 The "Security" section was modified to clarify that Microsemi does not support 288
read-back of FPGA core-programmed data (SAR 41235).
July 2010 This chapter is no longer published separately with its own part number and N/A
version but is now part of several FPGA fabric user’s guides.
v1.4 IGLOO nano and ProASIC3 nano devices were added to Table 14-1 • Flash- 284
(December 2008) Based FPGAs.
v1.3 The "Microprocessor Programming Support in Flash Devices" section was 284
(October 2008) revised to include new families and make the information more concise.
v1.2 The following changes were made to the family descriptions in Table 14-1 • 284
(June 2008) Flash-Based FPGAs:
• ProASIC3L was updated to include 1.5 V.
• The number of PLLs for ProASIC3E was changed from five to six.
v1.1 The "Microprocessor Programming Support in Flash Devices" section was 284
(March 2008) updated to include information on the IGLOO PLUS family. The "IGLOO
Terminology" section and "ProASIC3 Terminology" section are new.

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15 – Boundary Scan in Low Power Flash Devices

Boundary Scan
Low power flash devices are compatible with IEEE Standard 1149.1, which defines a hardware
architecture and the set of mechanisms for boundary scan testing. JTAG operations are used during
boundary scan testing.
The basic boundary scan logic circuit is composed of the TAP controller, test data registers, and
instruction register (Figure 15-2 on page 294).
Low power flash devices support three types of test data registers: bypass, device identification, and
boundary scan. The bypass register is selected when no other register needs to be accessed in a device.
This speeds up test data transfer to other devices in a test data path. The 32-bit device identification
register is a shift register with four fields (LSB, ID number, part number, and version). The boundary scan
register observes and controls the state of each I/O pin. Each I/O cell has three boundary scan register
cells, each with serial-in, serial-out, parallel-in, and parallel-out pins.

TAP Controller State Machine

The TAP controller is a 4-bit state machine (16 states) that operates as shown in Figure 15-1.
The 1s and 0s represent the values that must be present on TMS at a rising edge of TCK for the given
state transition to occur. IR and DR indicate that the instruction register or the data register is operating in
that state.
The TAP controller receives two control inputs (TMS and TCK) and generates control and clock signals
for the rest of the test logic architecture. On power-up, the TAP controller enters the Test-Logic-Reset
state. To guarantee a reset of the controller from any of the possible states, TMS must remain HIGH for
five TCK cycles. The TRST pin can also be used to asynchronously place the TAP controller in the Test-
Logic-Reset state.

TEST_LOGIC_RESET

0
0
1 1 1
RUN_TEST_IDLE SELECT_DR SELECT_IR

0 0
1 1
CAPTURE_DR CAPTURE_IR

0 0
0 0

SHIFT_DR SHIFT_IR

1 1
1 1
EXIT1_DR EXIT1_IR

0 0
0 0

PAUSE_DR PAUSE_IR

1 1

EXIT2_DR EXIT2_IR
0 0
1 1

UPDATE_DR UPDATE_IR

1 0 1 0

Figure 15-1 • TAP Controller State Machine

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Boundary Scan in Low Power Flash Devices

Microsemi’s Flash Devices Support the JTAG Feature

The flash-based FPGAs listed in Table 15-1 support the JTAG feature and the functions described in this
document.

Table 15-1 • Flash-Based FPGAs

Series Family* Description
IGLOO IGLOO Ultra-low power 1.2 V to 1.5 V FPGAs with Flash*Freeze technology
IGLOOe Higher density IGLOO FPGAs with six PLLs and additional I/O standards
IGLOO nano The industry’s lowest-power, smallest-size solution
IGLOO PLUS IGLOO FPGAs with enhanced I/O capabilities
ProASIC3 ProASIC3 Low power, high-performance 1.5 V FPGAs
ProASIC3E Higher density ProASIC3 FPGAs with six PLLs and additional I/O standards
ProASIC3 nano Lowest-cost solution with enhanced I/O capabilities
ProASIC3L ProASIC3 FPGAs supporting 1.2 V to 1.5 V with Flash*Freeze technology
RT ProASIC3 Radiation-tolerant RT3PE600L and RT3PE3000L
Military ProASIC3/EL Military temperature A3PE600L, A3P1000, and A3PE3000L
Automotive ProASIC3 ProASIC3 FPGAs qualified for automotive applications
Fusion Fusion Mixed signal FPGA integrating ProASIC®3 FPGA fabric, programmable
analog block, support for ARM® Cortex™-M1 soft processors, and flash
memory into a monolithic device
Note: *The device names link to the appropriate datasheet, including product brief, DC and switching characteristics,
and packaging information.

IGLOO Terminology
In documentation, the terms IGLOO series and IGLOO devices refer to all of the IGLOO devices as listed
in Table 15-1. Where the information applies to only one product line or limited devices, these exclusions
will be explicitly stated.

ProASIC3 Terminology
In documentation, the terms ProASIC3 series and ProASIC3 devices refer to all of the ProASIC3 devices
as listed in Table 15-1. Where the information applies to only one product line or limited devices, these
exclusions will be explicitly stated.
To further understand the differences between the IGLOO and ProASIC3 devices, refer to the Industry’s
Lowest Power FPGAs Portfolio.

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Boundary Scan Support in Low Power Devices

The information in this document applies to all Fusion, IGLOO, and ProASIC3 devices. For IGLOO,
IGLOO PLUS, and ProASIC3L devices, the Flash*Freeze pin must be deasserted for successful
boundary scan operations. Devices cannot enter JTAG mode directly from Flash*Freeze mode.

Boundary Scan Opcodes

Low power flash devices support all mandatory IEEE 1149.1 instructions (EXTEST, SAMPLE/PRELOAD,
and BYPASS) and the optional IDCODE instruction (Table 15-2).

Table 15-2 • Boundary Scan Opcodes

Hex Opcode
EXTEST 00
HIGHZ 07
USERCODE 0E
SAMPLE/PRELOAD 01
IDCODE 0F
CLAMP 05
BYPASS FF

Boundary Scan Chain

The serial pins are used to serially connect all the boundary scan register cells in a device into a
boundary scan register chain (Figure 15-2 on page 294), which starts at the TDI pin and ends at the TDO
pin. The parallel ports are connected to the internal core logic I/O tile and the input, output, and control
ports of an I/O buffer to capture and load data into the register to control or observe the logic state of
each I/O.
Each test section is accessed through the TAP, which has five associated pins: TCK (test clock input),
TDI, TDO (test data input and output), TMS (test mode selector), and TRST (test reset input). TMS, TDI,
and TRST are equipped with pull-up resistors to ensure proper operation when no input data is supplied
to them. These pins are dedicated for boundary scan test usage. Refer to the "JTAG Pins" section in the
"Pin Descriptions and Packaging" chapter of the appropriate device datasheet for pull-up/-down
recommendations for TCK and TRST pins. Pull-down recommendations are also given in Table 15-3 on
page 294

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Boundary Scan in Low Power Flash Devices

I/O I/O I/O I/O I/O

Test Data
Registers

TDI
Bypass Register

I/O
TCK

I/O
TAP Instruction Device
TMS

Controller Register Logic

I/O
TRST

I/O
TDO

I/O I/O I/O I/O I/O

Figure 15-2 • Boundary Scan Chain

Board-Level Recommendations
Table 15-3 gives pull-down recommendations for the TRST and TCK pins.

Table 15-3 • TRST and TCK Pull-Down Recommendations

VJTAG Tie-Off Resistance*
VJTAG at 3.3 V 200 Ω to 1 kΩ
VJTAG at 2.5 V 200 Ω to 1 kΩ
VJTAG at 1.8 V 500 Ω to 1 kΩ
VJTAG at 1.5 V 500 Ω to 1 kΩ
VJTAG at 1.2 V TBD
Note: Equivalent parallel resistance if more than one device is on JTAG chain (Figure 15-3)

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1.5 V

VJTAG
JTAG TRST
Header TCK GND

2 kΩ
Microsemi TDO 1.5 kΩ
TDI FPGA 1

2 kΩ
Microsemi TDO 1.5 kΩ
TDI FPGA 2

2 kΩ
Microsemi TDO 1.5 kΩ
TDI FPGA3

2 kΩ
Microsemi TDO 1.5 kΩ
TDI FPGA 4

Note: TCK is correctly wired with an equivalent tie-off resistance of 500 Ω, which satisfies the table for
VJTAG of 1.5 V. The resistor values for TRST are not appropriate in this case, as the tie-off
resistance of 375 Ω is below the recommended minimum for VJTAG = 1.5 V, but would be
appropriate for a VJTAG setting of 2.5 V or 3.3 V.
Figure 15-3 • Parallel Resistance on JTAG Chain of Devices

Advanced Boundary Scan Register Settings

You will not be able to control the order in which I/Os are released from boundary scan control. Testing
has produced cases where, depending on I/O placement and FPGA routing, a 5 ns glitch has been seen
on exiting programming mode. The following setting is recommended to prevent such I/O glitches:
1. In the FlashPro software, configure the advanced BSR settings for Specify I/O Settings During
Programming.
2. Set the input BSR cell to Low for the input I/O.

Revision 5 295
Boundary Scan in Low Power Flash Devices

List of Changes
The following table lists critical changes that were made in each revision of the chapter.

Date Changes Page

August 2012 In the "Boundary Scan Chain" section, the reference made to the datasheet for 293
pull-up/-down recommendations was changed to mention TCK and TRST pins
rather than TDO and TCK pins. TDO is an output, so no pull resistor is needed
(SAR 35937).
The "Advanced Boundary Scan Register Settings" section is new (SAR 38432). 295
July 2010 This chapter is no longer published separately with its own part number and version N/A
but is now part of several FPGA fabric user’s guides.
Table 15-3 • TRST and TCK Pull-Down Recommendations was revised to add 294
VJTAG at 1.2 V.
v1.4 IGLOO nano and ProASIC3 nano devices were added to Table 15-1 • Flash-Based 292
(December 2008) FPGAs.
v1.3 The "Boundary Scan Support in Low Power Devices" section was revised to include 293
(October 2008) new families and make the information more concise.
v1.2 The following changes were made to the family descriptions in Table 15-1 • Flash- 292
(June 2008) Based FPGAs:
• ProASIC3L was updated to include 1.5 V.
• The number of PLLs for ProASIC3E was changed from five to six.
v1.1 The chapter was updated to include the IGLOO PLUS family and information N/A
(March 2008) regarding 15 k gate devices.
The "IGLOO Terminology" section and "ProASIC3 Terminology" section are new. 292

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16 – UJTAG Applications in Microsemi’s Low
Power Flash Devices

Introduction
In Fusion, IGLOO, and ProASIC3 devices, there is bidirectional access from the JTAG port to the core
VersaTiles during normal operation of the device (Figure 16-1). User JTAG (UJTAG) is the ability for the
design to use the JTAG ports for access to the device for updates, etc. While regular JTAG is used, the
UJTAG tiles, located at the southeast area of the die, are directly connected to the JTAG Test Access
Port (TAP) Controller in normal operating mode. As a result, all the functional blocks of the device, such
as Clock Conditioning Circuits (CCCs) with PLLs, SRAM blocks, embedded FlashROM, flash memory
blocks, and I/O tiles, can be reached via the JTAG ports. The UJTAG functionality is available by
instantiating the UJTAG macro directly in the source code of a design. Access to the FPGA core
VersaTiles from the JTAG ports enables users to implement different applications using the TAP
Controller (JTAG port). This document introduces the UJTAG tile functionality and discusses a few
application examples. However, the possible applications are not limited to what is presented in this
document. UJTAG can serve different purposes in many designs as an elementary or auxiliary part of the
design. For detailed usage information, refer to the "Boundary Scan in Low Power Flash Devices"
section on page 291.

UJTAG
Address Generation and
Data Serlialization
UIREG[7:0] Enable
FROM
RESET
TDO
URSTB Addr[6:0]
Control Addr [6:0]
TDI UDRUPD
UDRCK CLK
TMS Data[7:0] Data[7:0]
UDRCAP SDI
TCK UDRSH SDO

UTDI
TRST
UTDO

Figure 16-1 • Block Diagram of Using UJTAG to Read FlashROM Contents

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UJTAG Applications in Microsemi’s Low Power Flash Devices

UJTAG Support in Flash-Based Devices

The flash-based FPGAs listed in Table 16-1 support the UJTAG feature and the functions described in
this document.

Table 16-1 • Flash-Based FPGAs

Series Family* Description
IGLOO IGLOO Ultra-low power 1.2 V to 1.5 V FPGAs with Flash*Freeze technology
IGLOOe Higher density IGLOO FPGAs with six PLLs and additional I/O standards
IGLOO nano The industry’s lowest-power, smallest-size solution
IGLOO PLUS IGLOO FPGAs with enhanced I/O capabilities
ProASIC3 ProASIC3 Low power, high-performance 1.5 V FPGAs
ProASIC3E Higher density ProASIC3 FPGAs with six PLLs and additional I/O standards
ProASIC3 nano Lowest-cost solution with enhanced I/O capabilities
ProASIC3L ProASIC3 FPGAs supporting 1.2 V to 1.5 V with Flash*Freeze technology
RT ProASIC3 Radiation-tolerant RT3PE600L and RT3PE3000L
Military ProASIC3/EL Military temperature A3PE600L, A3P1000, and A3PE3000L
Automotive ProASIC3 ProASIC3 FPGAs qualified for automotive applications
Fusion Fusion Mixed signal FPGA integrating ProASIC3 FPGA fabric, programmable
analog block, support for ARM® Cortex™-M1 soft processors, and flash
memory into a monolithic device
Note: *The device names link to the appropriate datasheet, including product brief, DC and switching characteristics,
and packaging information.

IGLOO Terminology
In documentation, the terms IGLOO series and IGLOO devices refer to all of the IGLOO devices as listed
in Table 16-1. Where the information applies to only one product line or limited devices, these exclusions
will be explicitly stated.

ProASIC3 Terminology
In documentation, the terms ProASIC3 series and ProASIC3 devices refer to all of the ProASIC3 devices
as listed in Table 16-1. Where the information applies to only one product line or limited devices, these
exclusions will be explicitly stated.
To further understand the differences between the IGLOO and ProASIC3 devices, refer to the Industry’s
Lowest Power FPGAs Portfolio.

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UJTAG Macro
The UJTAG tiles can be instantiated in a design using the UJTAG macro from the Fusion, IGLOO, or
ProASIC3 macro library. Note that "UJTAG" is a reserved name and cannot be used for any other user-
defined blocks. A block symbol of the UJTAG tile macro is presented in Figure 16-2. In this figure, the
ports on the left side of the block are connected to the JTAG TAP Controller, and the right-side ports are
accessible by the FPGA core VersaTiles. The TDI, TMS, TDO, TCK, and TRST ports of UJTAG are only
provided for design simulation purposes and should be treated as external signals in the design netlist.
However, these ports must NOT be connected to any I/O buffer in the netlist. Figure 16-3 on page 300
illustrates the correct connection of the UJTAG macro to the user design netlist. Microsemi Designer
software will automatically connect these ports to the TAP during place-and-route. Table 16-2 gives the
port descriptions for the rest of the UJTAG ports:

Table 16-2 • UJTAG Port Descriptions

Port Description
UIREG [7:0] This 8-bit bus carries the contents of the JTAG Instruction Register of each device. Instruction Register
values 16 to 127 are not reserved and can be employed as user-defined instructions.
URSTB URSTB is an active-low signal and will be asserted when the TAP Controller is in Test-Logic-Reset
mode. URSTB is asserted at power-up, and a power-on reset signal resets the TAP Controller. URSTB
will stay asserted until an external TAP access changes the TAP Controller state.
UTDI This port is directly connected to the TAP's TDI signal.
UTDO This port is the user TDO output. Inputs to the UTDO port are sent to the TAP TDO output MUX when
the IR address is in user range.
UDRSH Active-high signal enabled in the ShiftDR TAP state
UDRCAP Active-high signal enabled in the CaptureDR TAP state
UDRCK This port is directly connected to the TAP's TCK signal.
UDRUPD Active-high signal enabled in the UpdateDR TAP state

UIREG0
UIREG1
UIREG2
UIREG3
TDO UIREG4
UIREG5
TDI UIREG6
UIREG7
TMS URSTB
UDRUPD
TCK
UDRCK

TRST UDRCAP
UDRSH
UTDI

UTDO

Figure 16-2 • UJTAG Tile Block Symbol

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UJTAG Applications in Microsemi’s Low Power Flash Devices

a) CORRECT Instantiation

UIREG[7:0]
TDO
URSTB
TDI INPUTS
UDRUPD
TMS UDRCK FPGA
VersaTiles
UDRCAP
TCK
UDRSH
TRST UTDI
UTDO OUTPUTS

b) INCORRECT Instantiation

UIREG[7:0]
TDO
URSTB
TDI INPUTS
UDRUPD
TMS UDRCK FPGA
VersaTiles
UDRCAP
TCK
UDRSH
TRST UTDI
UTDO OUTPUTS

Note: Do not connect JTAG pins (TDO, TDI, TMS, TCK, or TRST) to I/Os in the design.
Figure 16-3 • Connectivity Method of UJTAG Macro

UJTAG Operation
There are a few basic functions of the UJTAG macro that users must understand before designing with it.
The most important fundamental concept of the UJTAG design is its connection with the TAP Controller
state machine.

TAP Controller State Machine

The 16 states of the TAP Controller state machine are shown in Figure 16-4 on page 301. The 1s and 0s,
shown adjacent to the state transitions, represent the TMS values that must be present at the time of a
rising TCK edge for a state transition to occur. In the states that include the letters "IR," the instruction
register operates; in the states that contain the letters "DR," the test data register operates. The TAP
Controller receives two control inputs, TMS and TCK, and generates control and clock signals for the rest
of the test logic.
On power-up (or the assertion of TRST), the TAP Controller enters the Test-Logic-Reset state. To reset
the controller from any other state, TMS must be held HIGH for at least five TCK cycles. After reset, the
TAP state changes at the rising edge of TCK, based on the value of TMS.

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1 Test_Logic_Reset
0
Run_Test/ 1 Select_ 1 Select_ 1
0 Idle IR_Scan
DR_Scan
0 0
1 1
Capture_DR Capture_IR
0 0
Shift_DR 0 Shift_IR 0
1 1
1 1
Exit1_DR Exit1_IR
0 0
Pause_DR 0 Pause_IR 0
1 1
0 0
Exit2_DR Exit2_IR
1 1
Update_DR Update_IR
1 0 1 0

Figure 16-4 • TAP Controller State Diagram

UJTAG Port Usage

UIREG[7:0] hold the contents of the JTAG instruction register. The UIREG vector value is updated when
the TAP Controller state machine enters the Update_IR state. Instructions 16 to 127 are user-defined and
can be employed to encode multiple applications and commands within an application. Loading new
instructions into the UIREG vector requires users to send appropriate logic to TMS to put the TAP
Controller in a full IR cycle starting from the Select IR_Scan state and ending with the Update_IR state.
UTDI, UTDO, and UDRCK are directly connected to the JTAG TDI, TDO, and TCK ports, respectively.
The TDI input can be used to provide either data (TAP Controller in the Shift_DR state) or the new
contents of the instruction register (TAP Controller in the Shift_IR state).
UDRSH, UDRUPD, and UDRCAP are HIGH when the TAP Controller state machine is in the Shift_DR,
Update_DR, and Capture_DR states, respectively. Therefore, they act as flags to indicate the stages of
the data shift process. These flags are useful for applications in which blocks of data are shifted into the
design from JTAG pins. For example, an active UDRSH can indicate that UTDI contains the data
bitstream, and UDRUPD is a candidate for the end-of-data-stream flag.
As mentioned earlier, users should not connect the TDI, TDO, TCK, TMS, and TRST ports of the UJTAG
macro to any port or net of the design netlist. The Designer software will automatically handle the port
connection.

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UJTAG Applications in Microsemi’s Low Power Flash Devices

Typical UJTAG Applications

Bidirectional access to the JTAG port from VersaTiles—without putting the device into test mode—
creates flexibility to implement many different applications. This section describes a few of these. All are
based on importing/exporting data through the UJTAG tiles.

Clock Conditioning Circuitry—Dynamic Reconfiguration

In low power flash devices, CCCs, which include PLLs, can be configured dynamically through either an
81-bit embedded shift register or static flash programming switches. These 81 bits control all the
characteristics of the CCC: routing MUX architectures, delay values, divider values, etc. Table 16-3 lists
the 81 configuration bits in the CCC.
Table 16-3 • Configuration Bits of Fusion, IGLOO, and ProASIC3 CCC Blocks
Bit Number(s) Control Function
80 RESET ENABLE
79 DYNCSEL
78 DYNBSEL
77 DYNASEL
<76:74> VCOSEL [2:0]
73 STATCSEL
72 STATBSEL
71 STATASEL
<70:66> DLYC [4:0]
<65:61> DLYB {4:0]
<60:56> DLYGLC [4:0]
<55:51> DLYGLB [4:0]
<50:46> DLYGLA [4:0]
45 XDLYSEL
<44:40> FBDLY [4:0]
<39:38> FBSEL
<37:35> OCMUX [2:0]
<34:32> OBMUX [2:0]
<31:29> OAMUX [2:0]
<28:24> OCDIV [4:0]
<23:19> OBDIV [4:0]
<18:14> OADIV [4:0]
<13:7> FBDIV [6:0]
<6:0> FINDIV [6:0]

The embedded 81-bit shift register (for the dynamic configuration of the CCC) is accessible to the
VersaTiles, which, in turn, have access to the UJTAG tiles. Therefore, the CCC configuration shift
register can receive and load the new configuration data stream from JTAG.
Dynamic reconfiguration eliminates the need to reprogram the device when reconfiguration of the CCC
functional blocks is needed. The CCC configuration can be modified while the device continues to
operate. Employing the UJTAG core requires the user to design a module to provide the configuration
data and control the CCC configuration shift register. In essence, this is a user-designed TAP Controller
requiring chip resources.
Similar reconfiguration capability exists in the ProASICPLUS® family. The only difference is the number of
shift register bits controlling the CCC (27 in ProASICPLUS and 81 in IGLOO, ProASIC3, and Fusion).

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Fine Tuning
In some applications, design constants or parameters need to be modified after programming the original
design. The tuning process can be done using the UJTAG tile without reprogramming the device with
new values. If the parameters or constants of a design are stored in distributed registers or embedded
SRAM blocks, the new values can be shifted onto the JTAG TAP Controller pins, replacing the old
values. The UJTAG tile is used as the “bridge” for data transfer between the JTAG pins and the FPGA
VersaTiles or SRAM logic. Figure 16-5 shows a flow chart example for fine-tuning application steps using
the UJTAG tile.
In Figure 16-5, the TMS signal sets the TAP Controller state machine to the appropriate states. The flow
mainly consists of two steps: a) shifting the defined instruction and b) shifting the new data. If the target
parameter is constantly used in the design, the new data can be shifted into a temporary shift register
from UTDI. The UDRSH output of UJTAG can be used as a shift-enable signal, and UDRCK is the shift
clock to the shift register. Once the shift process is completed and the TAP Controller state is moved to
the Update_DR state, the UDRUPD output of the UJTAG can latch the new parameter value from the
temporary register into a permanent location. This avoids any interruption or malfunctioning during the
serial shift of the new value.

TAP Controller in
Test_Logic_Reset
State
Set TAP state to
SHIFT_DR

Set TAP state to

SHIFT_IR
Shift data into TDI and
record UTDI in a shift
Shift the user-defined register
instruction of tuning
application

Set TAP state in

Update_DR
Set TAP state to
Update_IR

Latch the recorded data

onto the location of stored
parameter
UIREG Equal to Yes
the user-defined
instruction

No

Figure 16-5 • Flow Chart Example of Fine-Tuning an Application Using UJTAG

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Silicon Testing and Debugging

In many applications, the design needs to be tested, debugged, and verified on real silicon or in the final
embedded application. To debug and test the functionality of designs, users may need to monitor some
internal logic (or nets) during device operation. The approach of adding design test pins to monitor the
critical internal signals has many disadvantages, such as limiting the number of user I/Os. Furthermore,
adding external I/Os for test purposes may require additional or dedicated board area for testing and
debugging.
The UJTAG tiles of low power flash devices offer a flexible and cost-effective solution for silicon test and
debug applications. In this solution, the signals under test are shifted out to the TDO pin of the TAP
Controller. The main advantage is that all the test signals are monitored from the TDO pin; no pins or
additional board-level resources are required. Figure 16-6 illustrates this technique. Multiple test nets are
brought into an internal MUX architecture. The selection of the MUX is done using the contents of the
TAP Controller instruction register, where individual instructions (values from 16 to 127) correspond to
different signals under test. The selected test signal can be synchronized with the rising or falling edge of
TCK (optional) and sent out to UTDO to drive the TDO output of JTAG.
For flash devices, TDO (the output) is configured as low slew and the highest drive strength available in
the technology and/or device. Here are some examples:
1. If the device is A3P1000 and VCCI is 3.3 V, TDO will be configured as LVTTL 3.3 V output,
24 mA, low slew.
2. If the device is AGLN020 and VCCI is 1.8 V, TDO will be configured as LVCMOS 1.8 V output,
4 mA, low slew.
3. If the device is AGLE300 and VCCI is 2.5 V, TDO will be configured as LVCMOS 2.5 V output,
24 mA, low slew.
The test and debug procedure is not limited to the example in Figure 16-5 on page 303. Users can
customize the debug and test interface to make it appropriate for their applications. For example, multiple
test signals can be registered and then sent out through UTDO, each at a different edge of TCK. In other
words, n signals are sampled with an FTCK / n sampling rate. The bandwidth of the information sent out
to TDO is always proportional to the frequency of TCK.

Internal Test Nets

UIREG[7:0] Instruction
Decode
To Scope Channel
TDO URSTB

TDI UDRUPD
UDRCK D Q
TMS
UDRCAP
TCK UDRSH CLK

UTDI
TRST
UTDO

Figure 16-6 • UJTAG Usage Example in Test and Debug Applications

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SRAM Initialization
Users can also initialize embedded SRAMs of the low power flash devices. The initialization of the
embedded SRAM blocks of the design can be done using UJTAG tiles, where the initialization data is
imported using the TAP Controller. Similar functionality is available in ProASICPLUS devices using JTAG.
The guidelines for implementation and design examples are given in the RAM Initialization and ROM
Emulation in ProASICPLUS Devices application note.
SRAMs are volatile by nature; data is lost in the absence of power. Therefore, the initialization process
should be done at each power-up if necessary.

FlashROM Read-Back Using JTAG

The low power flash architecture contains a dedicated nonvolatile FlashROM block, which is formatted
into eight 128-bit pages. For more information on FlashROM, refer to the "FlashROM in Microsemi’s Low
Power Flash Devices" section on page 117. The contents of FlashROM are available to the VersaTiles
during normal operation through a read operation. As a result, the UJTAG macro can be used to provide
the FlashROM contents to the JTAG port during normal operation. Figure 16-7 illustrates a simple block
diagram of using UJTAG to read the contents of FlashROM during normal operation.
The FlashROM read address can be provided from outside the FPGA through the TDI input or can be
generated internally using the core logic. In either case, data serialization logic is required (Figure 16-7)
and should be designed using the VersaTile core logic. FlashROM contents are read asynchronously in
parallel from the flash memory and shifted out in a synchronous serial format to TDO. Shifting the serial
data out of the serialization block should be performed while the TAP is in UDRSH mode. The
coordination between TCK and the data shift procedure can be done using the TAP state machine by
monitoring UDRSH, UDRCAP, and UDRUPD.

UJTAG
Address Generation and
Data Serlialization
UIREG[7:0] Enable
FROM
RESET
TDO
URSTB Addr[6:0]
Control Addr [6:0]
TDI UDRUPD
UDRCK CLK
TMS Data[7:0] Data[7:0]
UDRCAP SDI
TCK UDRSH SDO

UTDI
TRST
UTDO

Figure 16-7 • Block Diagram of Using UJTAG to Read FlashROM Contents

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Conclusion
Microsemi low power flash FPGAs offer many unique advantages, such as security, nonvolatility,
reprogrammablity, and low power—all in a single chip. In addition, Fusion, IGLOO, and ProASIC3
devices provide access to the JTAG port from core VersaTiles while the device is in normal operating
mode. A wide range of available user-defined JTAG opcodes allows users to implement various types of
applications, exploiting this feature of these devices. The connection between the JTAG port and core
tiles is implemented through an embedded and hardwired UJTAG tile. A UJTAG tile can be instantiated in
designs using the UJTAG library cell. This document presents multiple examples of UJTAG applications,
such as dynamic reconfiguration, silicon test and debug, fine-tuning of the design, and RAM initialization.
Each of these applications offers many useful advantages.

Related Documents

Application Notes
RAM Initialization and ROM Emulation in ProASICPLUS Devices
http://www.microsemi.com/soc/documents/APA_RAM_Initd_AN.pdf

List of Changes
The following table lists critical changes that were made in each revision of the chapter.

Date Changes Page

December 2011 Information on the drive strength and slew rate of TDO pins was added to the 304
"Silicon Testing and Debugging" section (SAR 31749).
July 2010 This chapter is no longer published separately with its own part number and version N/A
but is now part of several FPGA fabric user’s guides.
v1.4 IGLOO nano and ProASIC3 nano devices were added to Table 16-1 • Flash-Based 298
(December 2008) FPGAs.
v1.3 The "UJTAG Support in Flash-Based Devices" section was revised to include new 298
(October 2008) families and make the information more concise.
The title of Table 16-3 • Configuration Bits of Fusion, IGLOO, and ProASIC3 CCC 302
Blocks was revised to include Fusion.
v1.2 The following changes were made to the family descriptions in Table 16-1 • Flash- 298
(June 2008) Based FPGAs:
• ProASIC3L was updated to include 1.5 V.
• The number of PLLs for ProASIC3E was changed from five to six.
v1.1 The chapter was updated to include the IGLOO PLUS family and information N/A
(March 2008) regarding 15 k gate devices.
The "IGLOO Terminology" section and "ProASIC3 Terminology" section are new. 298

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17 – Power-Up/-Down Behavior of Low Power
Flash Devices

Introduction
Microsemi’s low power flash devices are flash-based FPGAs manufactured on a 0.13 µm process node.
These devices offer a single-chip, reprogrammable solution and support Level 0 live at power-up (LAPU)
due to their nonvolatile architecture.
Microsemi's low power flash FPGA families are optimized for logic area, I/O features, and performance.
IGLOO® devices are optimized for power, making them the industry's lowest power programmable
solution. IGLOO PLUS FPGAs offer enhanced I/O features beyond those of the IGLOO ultra-low power
solution for I/O-intensive low power applications. IGLOO nano devices are the industry's lowest-power
cost-effective solution. ProASIC3®L FPGAs balance low power with high performance. The ProASIC3
family is Microsemi's high-performance flash FPGA solution. ProASIC3 nano devices offer the lowest-
cost solution with enhanced I/O capabilities.
Microsemi’s low power flash devices exhibit very low transient current on each power supply during
power-up. The peak value of the transient current depends on the device size, temperature, voltage
levels, and power-up sequence.
The following devices can have inputs driven in while the device is not powered:
• IGLOO (AGL015 and AGL030)
• IGLOO nano (all devices)
• IGLOO PLUS (AGLP030, AGLP060, AGLP125)
• IGLOOe (AGLE600, AGLE3000)
• ProASIC3L (A3PE3000L)
• ProASIC3 (A3P015, A3P030)
• ProASIC3 nano (all devices)
• ProASIC3E (A3PE600, A3PE1500, A3PE3000)
• Military ProASIC3EL (A3PE600L, A3PE3000L, but not A3P1000)
• RT ProASIC3 (RT3PE600L, RT3PE3000L)
The driven I/Os do not pull up power planes, and the current draw is limited to very small leakage current,
making them suitable for applications that require cold-sparing. These devices are hot-swappable,
meaning they can be inserted in a live power system.1

1. For more details on the levels of hot-swap compatibility in Microsemi’s low power flash devices, refer to the "Hot-Swap
Support" section in the I/O Structures chapter of the FPGA fabric user’s guide for the device you are using.

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Power-Up/-Down Behavior of Low Power Flash Devices

Flash Devices Support Power-Up Behavior

The flash FPGAs listed in Table 17-1 support power-up behavior and the functions described in this
document.
Table 17-1 • Flash-Based FPGAs
Series Family* Description
IGLOO IGLOO Ultra-low power 1.2 V to 1.5 V FPGAs with Flash*Freeze technology
IGLOOe Higher density IGLOO FPGAs with six PLLs and additional I/O standards
IGLOO nano The industry’s lowest-power, smallest-size solution
IGLOO PLUS IGLOO FPGAs with enhanced I/O capabilities
ProASIC3 ProASIC3 Low power, high-performance 1.5 V FPGAs
ProASIC3E Higher density ProASIC3 FPGAs with six PLLs and additional I/O standards
ProASIC3 nano Lowest-cost solution with enhanced I/O capabilities
ProASIC3L ProASIC3 FPGAs supporting 1.2 V to 1.5 V with Flash*Freeze technology
RT ProASIC3 Radiation-tolerant RT3PE600L and RT3PE3000L
Military ProASIC3/EL Military temperature A3PE600L, A3P1000, and A3PE3000L
Automotive ProASIC3 ProASIC3 FPGAs qualified for automotive applications
Note: *The device names link to the appropriate datasheet, including product brief, DC and switching characteristics,
and packaging information.

IGLOO Terminology
In documentation, the terms IGLOO series and IGLOO devices refer to all of the IGLOO devices as listed
in Table 17-1. Where the information applies to only one product line or limited devices, these exclusions
will be explicitly stated.

ProASIC3 Terminology
In documentation, the terms ProASIC3 series and ProASIC3 devices refer to all of the ProASIC3 devices
as listed in Table 17-1. Where the information applies to only one product line or limited devices, these
exclusions will be explicitly stated.
To further understand the differences between the IGLOO and ProASIC3 devices, refer to the Industry’s
Lowest Power FPGAs Portfolio.

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Power-Up/-Down Sequence and Transient Current

Microsemi's low power flash devices use the following main voltage pins during normal operation:2
• VCCPLX
• VJTAG
• VCC: Voltage supply to the FPGA core
– VCC is 1.5 V ± 0.075 V for IGLOO, IGLOO nano, IGLOO PLUS, and ProASIC3 devices
operating at 1.5 V.
– VCC is 1.2 V ± 0.06 V for IGLOO, IGLOO nano, IGLOO PLUS, and ProASIC3L devices
operating at 1.2 V.
– V5 devices will require a 1.5 V VCC supply, whereas V2 devices can utilize either a 1.2 V or
1.5 V VCC.
• VCCIBx: Supply voltage to the bank's I/O output buffers and I/O logic. Bx is the I/O bank number.
• VMVx: Quiet supply voltage to the input buffers of each I/O bank. x is the bank number. (Note:
IGLOO nano, IGLOO PLUS, and ProASIC3 nano devices do not have VMVx supply pins.)
The I/O bank VMV pin must be tied to the VCCI pin within the same bank. Therefore, the supplies that
need to be powered up/down during normal operation are VCC and VCCI. These power supplies can be
powered up/down in any sequence during normal operation of IGLOO, IGLOO nano, IGLOO PLUS,
ProASIC3L, ProASIC3, and ProASIC3 nano FPGAs. During power-up, I/Os in each bank will remain
tristated until the last supply (either VCCIBx or VCC) reaches its functional activation voltage. Similarly,
during power-down, I/Os of each bank are tristated once the first supply reaches its brownout
deactivation voltage.
Although Microsemi's low power flash devices have no power-up or power-down sequencing
requirements, Microsemi identifies the following power conditions that will result in higher than normal
transient current. Use this information to help maximize power savings:
Microsemi recommends tying VCCPLX to VCC and using proper filtering circuits to decouple VCC noise
from the PLL.
a. If VCCPLX is powered up before VCC, a static current of up to 5 mA (typical) per PLL may be
measured on VCCPLX.
The current vanishes as soon as VCC reaches the VCCPLX voltage level.
The same current is observed at power-down (VCC before VCCPLX).
b. If VCCPLX is powered up simultaneously or after VCC:
i. Microsemi's low power flash devices exhibit very low transient current on VCC. For
ProASIC3 devices, the maximum transient current on VCC does not exceed the maximum
standby current specified in the device datasheet.
The source of transient current, also known as inrush current, varies depending on the FPGA technology.
Due to their volatile technology, the internal registers in SRAM FPGAs must be initialized before
configuration can start. This initialization is the source of significant inrush current in SRAM FPGAs
during power-up. Due to the nonvolatile nature of flash technology, low power flash devices do not
require any initialization at power-up, and there is very little or no crossbar current through PMOS and
NMOS devices. Therefore, the transient current at power-up is significantly less than for SRAM FPGAs.
Figure 17-1 on page 310 illustrates the types of power consumption by SRAM FPGAs compared to
Microsemi's antifuse and flash FPGAs.

2. For more information on Microsemi FPGA voltage supplies, refer to the appropriate datasheet located at
http://www.microsemi.com/soc/techdocs/ds.

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Power-Up/-Down Behavior of Low Power Flash Devices

Power-On Inrush SRAM

SRAM FPGAs
Microsemi
FPGAs

System Active
Supply Frequency
Current
Voltage Dependent

Configuration
SRAM FPGAs

Static

Time (or frequency)

Figure 17-1 • Types of Power Consumption in SRAM FPGAs and Microsemi Nonvolatile FPGAs

Transient Current on VCC

The characterization of the transient current on VCC is performed on nearly all devices within the
IGLOO, ProASIC3L, and ProASIC3 families. A sample size of five units is used from each device family
member. All the device I/Os are internally pulled down while the transient current measurements are
performed. For ProASIC3 devices, the measurements at typical conditions show that the maximum
transient current on VCC, when the power supply is powered at ramp-rates ranging from 15 V/ms to
0.15 V/ms, does not exceed the maximum standby current specified in the device datasheets. Refer to
the DC and Switching Characteristics chapters of the ProASIC3 Flash Family FPGAS datasheet and
ProASIC3E Flash Family FPGAs datasheet for more information.
Similarly, IGLOO, IGLOO nano, IGLOO PLUS, and ProASIC3L devices exhibit very low transient current
on VCC. The transient current does not exceed the typical operating current of the device while in active
mode. For example, the characterization of AGL600-FG256 V2 and V5 devices has shown that the
transient current on VCC is typically in the range of 1–5 mA.

Transient Current on VCCI

The characterization of the transient current on VCCI is performed on devices within the IGLOO, IGLOO
nano, IGLOO PLUS, ProASIC3, ProASIC3 nano, and ProASIC3L groups of devices, similarly to VCC
transient current measurements. For ProASIC3 devices, the measurements at typical conditions show
that the maximum transient current on VCCI, when the power supply is powered at ramp-rates ranging
from 33 V/ms to 0.33 V/ms, does not exceed the maximum standby current specified in the device
datasheet. Refer to the DC and Switching Characteristics chapters of the ProASIC3 Flash Family
FPGAS datasheet and ProASIC3E Flash Family FPGAs datasheet for more information.
Similarly, IGLOO, IGLOO PLUS, and ProASIC3L devices exhibit very low transient current on VCCI. The
transient current does not exceed the typical operating current of the device while in active mode. For
example, the characterization of AGL600-FG256 V2 and V5 devices has shown that the transient current
on VCCI is typically in the range of 1–2 mA.

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I/O Behavior at Power-Up/-Down

This section discusses the behavior of device I/Os, used and unused, during power-up/-down of VCC and
VCCI. As mentioned earlier, VMVx and VCCIBx are tied together, and therefore, inputs and outputs are
powered up/down at the same time.

I/O State during Power-Up/-Down

This section discusses the characteristics of I/O behavior during device power-up and power-down.
Before the start of power-up, all I/Os are in tristate mode. The I/Os will remain tristated during power-up
until the last voltage supply (VCC or VCCI) is powered to its functional level (power supply functional
levels are discussed in the "Power-Up to Functional Time" section on page 312). After the last supply
reaches the functional level, the outputs will exit the tristate mode and drive the logic at the input of the
output buffer. Similarly, the input buffers will pass the external logic into the FPGA fabric once the last
supply reaches the functional level. The behavior of user I/Os is independent of the VCC and VCCI
sequence or the state of other voltage supplies of the FPGA (VPUMP and VJTAG). Figure 17-2 shows
the output buffer driving HIGH and its behavior during power-up with 10 kΩ external pull-down. In
Figure 17-2, VCC is powered first, and VCCI is powered 5 ms after VCC. Figure 17-3 on page 312
shows the state of the I/O when VCCI is powered about 5 ms before VCC. In the circuitry shown in
Figure 17-3 on page 312, the output is externally pulled down.
During power-down, device I/Os become tristated once the first power supply (VCC or VCCI) drops
below its brownout voltage level. The I/O behavior during power-down is also independent of voltage
supply sequencing.

Figure 17-2 • I/O State when VCC Is Powered before VCCI

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Power-Up/-Down Behavior of Low Power Flash Devices

Figure 17-3 • I/O State when VCCI Is Powered before VCC

Power-Up to Functional Time

At power-up, device I/Os exit the tristate mode and become functional once the last voltage supply in the
power-up sequence (VCCI or VCC) reaches its functional activation level. The power-up–to–functional
time is the time it takes for the last supply to power up from zero to its functional level. Note that the
functional level of the power supply during power-up may vary slightly within the specification at different
ramp-rates. Refer to Table 17-2 for the functional level of the voltage supplies at power-up.
Typical I/O behavior during power-up–to–functional time is illustrated in Figure 17-2 on page 311 and
Figure 17-3.
Table 17-2 • Power-Up Functional Activation Levels for VCC and VCCI
VCC Functional VCCI Functional
Device Activation Level (V) Activation Level (V)
ProASIC3, ProASIC3 nano, IGLOO, IGLOO nano, 0.85 V ± 0.25 V 0.9 V ± 0.3 V
IGLOO PLUS, and ProASIC3L devices running at
VCC = 1.5 V*
IGLOO, IGLOO nano, IGLOO PLUS, and 0.85 V ± 0.2 V 0.9 V ± 0.15 V
ProASIC3L devices running at VCC = 1.2 V*
Note: *V5 devices will require a 1.5 V VCC supply, whereas V2 devices can utilize either a 1.2 V or 1.5 V
VCC.

Microsemi’s low power flash devices meet Level 0 LAPU; that is, they can be functional prior to VCC
reaching the regulated voltage required. This important advantage distinguishes low power flash devices
from their SRAM-based counterparts. SRAM-based FPGAs, due to their volatile technology, require
hundreds of milliseconds after power-up to configure the design bitstream before they become
functional. Refer to Figure 17-4 on page 313 and Figure 17-5 on page 314 for more information.

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VCC = VCCI + VT
Where VT can be from 0.58 V to 0.9 V (typically 0.75 V)
VCC

VCC = 1.575 V

Region 4: I/O Region 5: I/O buffers are ON

Region 1: I/O Buffers are OFF buffers are ON. and power supplies are within
I/Os are functional specification.
(except differential inputs) I/Os meet the entire datasheet
but slower because VCCI is and timer specifications for
below specifcation. For the speed, VIH/VIL , VOH /VOL , etc.
same reason, input buffers do not
meet VIH/VIL levels, and output
buffers do not meet VOH/VOL levels.

VCC = 1.425 V
Region 2: I/O buffers are ON. Region 3: I/O buffers are ON.
I/Os are functional (except differential inputs) I/Os are functional; I/O DC
but slower because VCCI / VCC are below specifications are met,
specification. For the same reason, input but I/Os are slower because
buffers do not meet VIH / VIL levels, and the VCC is below specification
output buffers do not meet VOH / VOL levels.
Activation trip point:
Va = 0.85 V ± 0.25 V
Deactivation trip point:
Region 1: I/O buffers are OFF
Vd = 0.75 V ± 0.25 V

Activation trip point: Min VCCI datasheet specification VCCI

Va = 0.9 V ± 0.3 V voltage at a selected I/O
standard; i.e., 1.425 V or 1.7 V
Deactivation trip point:
or 2.3 V or 3.0 V
Vd = 0.8 V ± 0.3 V

Figure 17-4 • I/O State as a Function of VCCI and VCC Voltage Levels for IGLOO V5, IGLOO nano V5,
IGLOO PLUS V5, ProASIC3L, and ProASIC3 Devices Running at VCC = 1.5 V ± 0.075 V

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Power-Up/-Down Behavior of Low Power Flash Devices

VCC = VCCI + VT
where VT can be from 0.58 V to 0.9 V (typically 0.75 V)
VCC

VCC = 1.575 V

Region 4: I/O Region 5: I/O buffers are ON

Region 1: I/O Buffers are OFF buffers are ON. and power supplies are within
I/Os are functional specification.
(except differential inputs) I/Os meet the entire datasheet
but slower because VCCI is and timer specifications for
below specification. For the speed, VIH / VIL , VOH / VOL , etc.
same reason, input buffers do not
meet VIH / VIL levels, and output
buffers do not meet VOH / VOL levels.

VCC = 1.14 V
Region 2: I/O buffers are ON.
Region 3: I/O buffers are ON.
I/Os are functional (except differential inputs)
I/Os are functional; I/O DC
but slower because VCCI/VCC are below specifications are met,
specification. For the same reason, input but I/Os are slower because
buffers do not meet VIH/VIL levels, and the VCC is below specification.
output buffers do not meet VOH/VOL levels.
Activation trip point:
Va = 0.85 V ± 0.2 V
Deactivation trip point:
Region 1: I/O buffers are OFF
Vd = 0.75 V ± 0.2 V

Activation trip point: Min VCCI datasheet specification VCCI

Va = 0.9 V ± 0.15 V voltage at a selected I/O
Deactivation trip point: standard; i.e., 1.14 V,1.425 V, 1.7 V,
2.3 V, or 3.0 V
Vd = 0.8 V ± 0.15 V

Figure 17-5 • I/O State as a Function of VCCI and VCC Voltage Levels for IGLOO V2, IGLOO nano V2,
IGLOO PLUS V2, and ProASIC3L Devices Running at VCC = 1.2 V ± 0.06 V

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Brownout Voltage
Brownout is a condition in which the voltage supplies are lower than normal, causing the device to
malfunction as a result of insufficient power. In general, Microsemi does not guarantee the functionality of
the design inside the flash FPGA if voltage supplies are below their minimum recommended operating
condition. Microsemi has performed measurements to characterize the brownout levels of FPGA power
supplies. Refer to Table 17-3 for device-specific brownout deactivation levels. For the purpose of
characterization, a direct path from the device input to output is monitored while voltage supplies are
lowered gradually. The brownout point is defined as the voltage level at which the output stops following
the input. Characterization tests performed on several IGLOO, ProASIC3L, and ProASIC3 devices in
typical operating conditions showed the brownout voltage levels to be within the specification.
During device power-down, the device I/Os become tristated once the first supply in the power-down
sequence drops below its brownout deactivation voltage.
Table 17-3 • Brownout Deactivation Levels for VCC and VCCI
VCC Brownout VCCI Brownout
Devices Deactivation Level (V) Deactivation Level (V)
ProASIC3, ProASIC3 nano, IGLOO, IGLOO nano, 0.75 V ± 0.25 V 0.8 V ± 0.3 V
IGLOO PLUS and ProASIC3L devices running at
VCC = 1.5 V
IGLOO, IGLOO nano, IGLOO PLUS, and 0.75 V ± 0.2 V 0.8 V ± 0.15 V
ProASIC3L devices running at VCC = 1.2 V

PLL Behavior at Brownout Condition

When PLL power supply voltage and/or VCC levels drop below the VCC brownout levels mentioned
above for 1.5 V and 1.2 V devices, the PLL output lock signal goes LOW and/or the output clock is lost.
The following sections explain PLL behavior during and after the brownout condition.
VCCPLL and VCC Tied Together
In this condition, both VCC and VCCPLL drop below the 0.75 V (± 0.25 V or ± 0.2 V) brownout level.
During the brownout recovery, once VCCPLL and VCC reach the activation point (0.85 ± 0.25 V or
± 0.2 V) again, the PLL output lock signal may still remain LOW with the PLL output clock signal toggling.
If this condition occurs, there are two ways to recover the PLL output lock signal:
1. Cycle the power supplies of the PLL (power off and on) by using the PLL POWERDOWN signal.
2. Turn off the input reference clock to the PLL and then turn it back on.
Only VCCPLL Is at Brownout
In this case, only VCCPLL drops below the 0.75 V (± 0.25 V or ± 0.2 V) brownout level and the VCC
supply remains at nominal recommended operating voltage (1.5 V ± 0.075 V for 1.5 V devices and 1.2 V
± 0.06 V for 1.2 V devices). In this condition, the PLL behavior after brownout recovery is similar to initial
power-up condition, and the PLL will regain lock automatically after VCCPLL is ramped up above the
activation level (0.85 ± 0.25 V or ± 0.2 V). No intervention is necessary in this case.
Only VCC Is at Brownout
In this condition, VCC drops below the 0.75 V (± 0.25 V or ± 0.2 V) brownout level and VCCPLL remains
at nominal recommended operating voltage (1.5 V ± 0.075 V for 1.5 V devices and 1.2 V ± 0.06 V for
1.2 V devices). During the brownout recovery, once VCC reaches the activation point again (0.85 ±
0.25 V or ± 0.2 V), the PLL output lock signal may still remain LOW with the PLL output clock signal
toggling. If this condition occurs, there are two ways to recover the PLL output lock signal:
1. Cycle the power supplies of the PLL (power off and on) by using the PLL POWERDOWN signal.
2. Turn off the input reference clock to the PLL and then turn it back on.
It is important to note that Microsemi recommends using a monotonic power supply or voltage regulator
to ensure proper power-up behavior.

Revision 5 315
Power-Up/-Down Behavior of Low Power Flash Devices

Internal Pull-Up and Pull-Down

Low power flash device I/Os are equipped with internal weak pull-up/-down resistors that can be used by
designers. If used, these internal pull-up/-down resistors will be activated during power-up, once both
VCC and VCCI are above their functional activation level. Similarly, during power-down, these internal
pull-up/-down resistors will turn off once the first supply voltage falls below its brownout deactivation
level.

Cold-Sparing
In cold-sparing applications, voltage can be applied to device I/Os before and during power-up. Cold-
sparing applications rely on three important characteristics of the device:
1. I/Os must be tristated before and during power-up.
2. Voltage applied to the I/Os must not power up any part of the device.
3. VCCI should not exceed 3.6 V, per datasheet specifications.
As described in the "Power-Up to Functional Time" section on page 312, Microsemi’s low power flash
I/Os are tristated before and during power-up until the last voltage supply (VCC or VCCI) is powered up
past its functional level. Furthermore, applying voltage to the FPGA I/Os does not pull up VCC or VCCI
and, therefore, does not partially power up the device. Table 17-4 includes the cold-sparing test results
on A3PE600-PQ208 devices. In this test, leakage current on the device I/O and residual voltage on the
power supply rails were measured while voltage was applied to the I/O before power-up.
Table 17-4 • Cold-Sparing Test Results for A3PE600 Devices
Residual Voltage (V)
Device I/O VCC VCCI Leakage Current
Input 0 0.003 <1 µA
Output 0 0.003 <1 µA

VCCI must not exceed 3.6 V, as stated in the datasheet specification. Therefore, ProASIC3E devices
meet all three requirements stated earlier in this section and are suitable for cold-sparing applications.
The following devices and families support cold-sparing:
• IGLOO: AGL015 and AGL030
• All IGLOO nano
• All IGLOO PLUS
• All IGLOOe
• ProASIC3L: A3PE3000L
• ProASIC3: A3P015 and A3P030
• All ProASIC3 nano
• All ProASIC3E
• Military ProASIC3EL: A3PE600L and A3PE3000L
• RT ProASIC3: RT3PE600L and RT3PE3000L

316 R e vi s i o n 5
 ProASIC3 nano FPGA Fabric User’s Guide

The following devices and families do not support cold-sparing:

• IGLOO: AGL060, AGL125, AGL250, AGL600, AGL1000
• ProASIC3: A3P060, A3P125, A3P250, A3P400, A3P600, A3P1000
• ProASIC3L: A3P250L, A3P600L, A3P1000L
• Military ProASIC3: A3P1000

Hot-Swapping
Hot-swapping is the operation of hot insertion or hot removal of a card in a powered-up system. The I/Os
need to be configured in hot-insertion mode if hot-swapping compliance is required. For more details on
the levels of hot-swap compatibility in low power flash devices, refer to the "Hot-Swap Support" section in
the I/O Structures chapter of the user’s guide for the device you are using.
The following devices and families support hot-swapping:
• IGLOO: AGL015 and AGL030
• All IGLOO nano
• All IGLOO PLUS
• All IGLOOe
• ProASIC3L: A3PE3000L
• ProASIC3: A3P015 and A3P030
• All ProASIC3 nano
• All ProASIC3E
• Military ProASIC3EL: A3PE600L and A3PE3000L
• RT ProASIC3: RT3PE600L and RT3PE3000L
The following devices and families do not support hot-swapping:
• IGLOO: AGL060, AGL125, AGL250, AGL400, AGL600, AGL1000
• ProASIC3: A3P060, A3P125, A3P250, A3P400, A3P600, A3P1000
• ProASIC3L: A3P250L, A3P600L, A3P1000L
• Military ProASIC3: A3P1000

Conclusion
Microsemi's low power flash FPGAs provide an excellent programmable logic solution for a broad range
of applications. In addition to high performance, low cost, security, nonvolatility, and single chip, they are
live at power-up (meet Level 0 of the LAPU classification) and offer clear and easy-to-use power-up/-
down characteristics. Unlike SRAM FPGAs, low power flash devices do not require any specific power-
up/-down sequencing and have extremely low power-up inrush current in any power-up sequence.
Microsemi low power flash FPGAs also support both cold-sparing and hot-swapping for applications
requiring these capabilities.

Revision 5 317
Power-Up/-Down Behavior of Low Power Flash Devices

Related Documents

Datasheets
ProASIC3 Flash Family FPGAs
http://www.microsemi.com/soc/documents/PA3_DS.pdf
ProASIC3E Flash Family FPGAs
http://www.microsemi.com/soc/documents/PA3E_DS.pdf

List of Changes
The following table lists critical changes that were made in each revision of the chapter.

Date Changes Page

v1.2 IGLOO nano and ProASIC3 nano devices were added to the document as
(December 2008) supported device types.
v1.1 The "Introduction" section was updated to add Military ProASIC3EL and RT 307
(October 2008) ProASIC3 devices to the list of devices that can have inputs driven in while the
device is not powered.
The "Flash Devices Support Power-Up Behavior" section was revised to include 308
new families and make the information more concise.
The "Cold-Sparing" section was revised to add Military ProASIC3/EL and RT 316
ProASIC3 devices to the lists of devices with and without cold-sparing support.
The "Hot-Swapping" section was revised to add Military ProASIC3/EL and RT 317
ProASIC3 devices to the lists of devices with and without hot-swap support.
AGL400 was added to the list of devices that do not support hot-swapping.
v1.0 This document was revised, renamed, and assigned a new part number. It now N/A
(August 2008) includes data for the IGLOO and ProASIC3L families.
v1.3 The "List of Changes" section was updated to include the three different I/O 318
(March 2008) Structure handbook chapters.
v1.2 The first sentence of the "PLL Behavior at Brownout Condition" section was 315
(February 2008) updated to read, "When PLL power supply voltage and/or VCC levels drop below the
VCC brownout levels (0.75 V ± 0.25 V), the PLL output lock signal goes low and/or
the output clock is lost."
v1.1 The "PLL Behavior at Brownout Condition" section was added. 315
(January 2008)

318 R e vi s i o n 5
A – Summary of Changes

History of Revision to Chapters

The following table lists chapters that were affected in each revision of this document. Each chapter
includes its own change history because it may appear in other device family user’s guides. Refer to the
individual chapter for a list of specific changes.

Revision List of Changes

(month/year) Chapter Affected (page number)
Revision 5 "Microprocessor Programming of Microsemi’s Low Power Flash Devices" was 290
(September 2012) revised.
Revision 4 "FPGA Array Architecture in Low Power Flash Devices" was revised. 20
(August 2012)
The "Low Power Modes in ProASIC3/E and ProASIC3 nano FPGAs" chapter 21
was added (SAR 32020).
"Clock Conditioning Circuits in Low Power Flash Devices and Mixed Signal 113
FPGAs" was revised.
"SRAM and FIFO Memories in Microsemi's Low Power Flash Devices" was 157
revised.
"I/O Structures in nano Devices" was revised. 183
The "Pin Descriptions" and "Packaging" chapters were removed. This N/A
information is now published in the datasheet for each product line (SAR
34772).
"In-System Programming (ISP) of Microsemi’s Low Power Flash Devices Using 273
FlashPro4/3/3X" was revised.
"Boundary Scan in Low Power Flash Devices" was revised. 296
Revision 3 "Clock Conditioning Circuits in Low Power Flash Devices and Mixed Signal 113
(December 2011) FPGAs" was revised.
"UJTAG Applications in Microsemi’s Low Power Flash Devices" was revised. 306
Revision 2 "Clock Conditioning Circuits in Low Power Flash Devices and Mixed Signal 113
(June 2011) FPGAs" was revised.
"I/O Structures in nano Devices" was revised. 183
"I/O Software Control in Low Power Flash Devices" was revised. 204
"In-System Programming (ISP) of Microsemi’s Low Power Flash Devices Using 273
FlashPro4/3/3X" was revised.
Revision 1 "Global Resources in Low Power Flash Devices" was revised. 59
(July 2010)
"Clock Conditioning Circuits in Low Power Flash Devices and Mixed Signal 113
FPGAs" was revised.
"I/O Software Control in Low Power Flash Devices" was revised. 204
"DDR for Microsemi’s Low Power Flash Devices" was revised. 219
"Programming Flash Devices" was revised. 232

Revision 5 319
Summary of Changes

Revision List of Changes

(month/year) Chapter Affected (page number)
Revision 1 "In-System Programming (ISP) of Microsemi’s Low Power Flash Devices Using 273
(continued) FlashPro4/3/3X" was revised.
"Core Voltage Switching Circuit for IGLOO and ProASIC3L In-System 281
Programming" was revised.
"Boundary Scan in Low Power Flash Devices" was revised. 296
Revision 0 The ProASIC3 nano Low Power Flash FPGAs Handbook was divided into two N/A
(April 2010) parts to create the ProASIC3 nano Datasheet ProASIC3 nano Device Family
User’s Guide.

320 R e vi s i o n 5
B – Product Support
Microsemi SoC Products Group backs its products with various support services, including Customer
Service, Customer Technical Support Center, a website, electronic mail, and worldwide sales offices.
This appendix contains information about contacting Microsemi SoC Products Group and using these
support services.

Customer Service
Contact Customer Service for non-technical product support, such as product pricing, product upgrades,
update information, order status, and authorization.
From North America, call 800.262.1060
From the rest of the world, call 650.318.4460
Fax, from anywhere in the world, 650.318.8044

Customer Technical Support Center

Microsemi SoC Products Group staffs its Customer Technical Support Center with highly skilled
engineers who can help answer your hardware, software, and design questions about Microsemi SoC
Products. The Customer Technical Support Center spends a great deal of time creating application
notes, answers to common design cycle questions, documentation of known issues, and various FAQs.
So, before you contact us, please visit our online resources. It is very likely we have already answered
your questions.

Technical Support
Visit the Customer Support website (www.microsemi.com/soc/support/search/default.aspx) for more
information and support. Many answers available on the searchable web resource include diagrams,
illustrations, and links to other resources on the website.

Website
You can browse a variety of technical and non-technical information on the SoC home page, at
www.microsemi.com/soc.

Contacting the Customer Technical Support Center

Highly skilled engineers staff the Technical Support Center. The Technical Support Center can be
contacted by email or through the Microsemi SoC Products Group website.

Email
You can communicate your technical questions to our email address and receive answers back by email,
fax, or phone. Also, if you have design problems, you can email your design files to receive assistance.
We constantly monitor the email account throughout the day. When sending your request to us, please
be sure to include your full name, company name, and your contact information for efficient processing of
your request.
The technical support email address is [email protected].

Revision 5 321
Product Support

My Cases
Microsemi SoC Products Group customers may submit and track technical cases online by going to My
Cases.

Outside the U.S.

Customers needing assistance outside the US time zones can either contact technical support via email
([email protected]) or contact a local sales office. Sales office listings can be found at
www.microsemi.com/soc/company/contact/default.aspx.

ITAR Technical Support

For technical support on RH and RT FPGAs that are regulated by International Traffic in Arms
Regulations (ITAR), contact us via [email protected]. Alternatively, within My Cases, select
Yes in the ITAR drop-down list. For a complete list of ITAR-regulated Microsemi FPGAs, visit the ITAR
web page.

322 R e vi s i o n 5
Index

Numerics PLL and CLKDLY macros 73

5 V input and output tolerance 171 clocks
delay adjustment 86
detailed usage information 104
A multipliers and dividers 85
AES encryption 239 phase adjustment 87
architecture 131 physical constraints for quadrant clocks 108
four I/O banks 13 SmartGen settings 105
global 31 static timing analysis 107
IGLOO 12 cold-sparing 170, 316
IGLOO nano 11 compiling 195
IGLOO PLUS 13 report 195
IGLOOe 14 contacting Microsemi SoC Products Group
ProASIC3 nano 11 customer service 321
ProASIC3E 14 email 321
routing 18 web-based technical support 321
spine 41
customer service 321
SRAM and FIFO 135
architecture overview 11
array coordinates 16 D
DDR
architecture 205
B design example 216
boundary scan 291 I/O options 207
board-level recommendations 294 input/output support 209
chain 293 instantiating registers 210
opcodes 293 design example 55
brownout voltage 315 design recommendations 46
device architecture 131
C DirectC 280
CCC 82 DirectC code 285
board-level considerations 112 dual-tile designs 160
cascading 109
Fusion locations 83
E
global resources 62
hardwired I/O clock input 108
efficient long-line resources 19
IGLOO locations 81 encryption 289
IGLOOe locations 82 ESD protection 171
locations 80
naming conventions 179 F
overview 61 FIFO
ProASIC3 locations 81 features 141
ProASIC3E locations 82 initializing 148
programming 62 memory block consumption 147
software configuration 96 software support 154
with integrated PLLs 79 usage 144
without integrated PLLs 79 flash switch for programming 9
chip global aggregation 43 FlashLock
CLKDLY macro 65 IGLOO and ProASIC devices 241
clock aggregation 44 permanent 241
clock macros 46 FlashROM
clock sources access using JTAG port 123
core logic 76 architecture 267

Revision 5 323
Index

architecture of user nonvolatile 117 ISP 223, 224

configuration 120 architecture 261
custom serialization 129 board-level considerations 271
design flow 124 circuit 277
generation 125 microprocessor 283
programming and accessing 122
programming file 127 J
programming files 267
JTAG 1532 261
SmartGen 126
JTAG interface 285
FlashROM read-back 305

L
G
layout
global architecture 31
device-specific 78
global buffers
LTC3025 linear voltage regulator 277
no programmable delays 64
with PLL function 67
with programmable delays 64 M
global macros MAC validation/authentication 288
Synplicity 50 macros
globals CLKBUF 77
designer flow 53 CLKBUF_LVDS/LVPECL 77
networks 58 CLKDLY 65, 73
spines and rows 41 FIFO4KX18 141
PLL 73
PLL macro signal descriptions 68
H RAM4K9 137
HLD code RAM512X18 139
instantiating 192
supported basic RAM macros 136
hot-swap 167 UJTAG 299
hot-swapping 317 MCU FPGA programming model 286
memory availability 146
I memory blocks 135
I/O banks microprocessor programming 283
standards 40 Microsemi SoC Products Group
standards compatibility 162 email 321
I/O standards 77 web-based technical support 321
global macros 46 website 321
single-ended 166
I/Os O
assigning technologies 198
OTP 223
assignments defined in PDC file 193
output slew rate 175
automatically assigning 202
behavior at power-up/-down 311
board-level considerations 181 P
buffer schematic cell 191 PDC
cell architecture 207 global promotion and demotion 51
configuration with SmartGen 188 place-and-route 193
features 163, 164, 167 PLL
global, naming 35 behavior at brownout condition 315
manually assigning technologies 198 configuration bits 90
nano standard 162 core specifications 84
register combining 174 dynamic PLL configuration 87
simplified buffer circuitry 165 functional description 85
software support 177 power supply decoupling scheme 112
software-controlled attributes 187 PLL block signals 68
user I/O assignment flow chart 185 PLL macro block diagram 69
user naming convention 178 product support
wide range support 166 customer service 321

324 R e vi s i o n 5
 ProASIC3 nano FPGA Fabric User’s Guide

email 321 spine assignment 52

My Cases 322 SRAM
outside the U.S. 322 features 137
technical support 321 initializing 148
website 321 software support 154
programmers 225 usage 141
device support 228 SSOs 176
programming STAPL player 285
AES encryption 253 STAPL vs. DirectC 287
basics 223 switching circuit 278
features 223 verification 278
file header definition 257 synthesizing 192
flash and antifuse 225
flash devices 223
glossary 258
T
guidelines for flash programming 229 TAP controller state machine 291, 300
header pin numbers 270 tech support
microprocessor 283 ITAR 322
power supplies 263 My Cases 322
security 247 outside the U.S. 322
solution 268 technical support 321
solutions 227 transient current
voltage 263 VCC 310
volume services 226 VCCI 310
programming support 221 transient current, power-up/-down 309

R U
RAM UJTAG
memory block consumption 147 CCC dynamic reconfiguration 302
remote upgrade via TCP/IP 288 fine tuning 303
routing structure 18 macro 299
operation 300
port usage 301
S use to read FlashROM contents 297
Schmitt trigger 174 ultra-fast local lines 18
security 264
architecture 237
encrypted programming 288
V
examples 242 variable aspect ratio and cascading 145
features 238 VersaNet global networks 33
FlashLock 241 VersaTile 15
FlashROM 121 very-long-line resources 19
FlashROM use models 245 ViewDraw 191
in programmable logic 235 VREF pins
overview 235 manually assigning 199
signal integrity problem 271
silicon testing 304 W
single tile designs 159 weak pull-down 175
SmartGen 154 weak pull-up 175
spine architecture 41 web-based technical support 321

Revision 5 325
 Microsemi Corporation (NASDAQ: MSCC) offers a comprehensive portfolio of semiconductor
solutions for: aerospace, defense and security; enterprise and communications; and industrial
and alternative energy markets. Products include high-performance, high-reliability analog
and RF devices, mixed signal and RF integrated circuits, customizable SoCs, FPGAs, and
complete subsystems. Microsemi is headquartered in Aliso Viejo, Calif. Learn more at
www.microsemi.com.
Microsemi Corporate Headquarters
One Enterprise, Aliso Viejo CA 92656 USA © 2012 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are trademarks of
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