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1. Compare IGBT and MOSFET (any 5).
IGBT MOSFET
Insulated Gate Bipolar Transistor. Metal Oxide Semiconductor Field
Effect Transistor
IGBT is a three terminal semiconductor MOSFET is a four terminal
switching device used in the electronic semiconductor switching device
circuits for switching and amplification of which is also used as switching and
signals. amplification.
IGBT has three terminals, which are: MOSFET has four terminals which
emitter (E), gate (G) and collector (C). are: source (S), gate (G), drain (D)
and body (or substrate). Sometimes,
the body terminal is merged with the
source, making it a three-terminal
device.
IGBT is suitable for medium to high MOSFET is suitable for low to
current conduction and controlling. medium current conduction and
controlling.
IGBT has ability to handle very high MOSFET is capable of handling
voltage and high power. only low to medium voltage and
power.
IGBT can only be used for relatively low MOSFET can be used for very high
frequencies, up to a few kHz. frequency (of the order of MHz)
applications.
For IGBT, the turn-off time is larger than The turn-off time of a MOSFET is
MOSFET. smaller than IGBT.
The switching speed of IGBT is relatively The switching speed of MOSFET is
low. very high.
IGBT has ability to handle any transient MOSFET cannot handle transient
voltage and current. voltage and current. Thus, the
operation of a MOSFET gets
disturbed when the transient occurs.
For IGBT, the saturation voltage is low. MOSFET has high saturation
voltage.
IGBT is costlier than MOSFET. The cost of a MOSFET is relatively
low.
IGBTs are extensively used in high power MOSFETs are used in low power
AC applications such as in inverter DC applications like in power
circuits. supplies.
2. Compare between BJT and FET.
BJT FET
Bipolar Junction Transistor. Field Effect Transistor.
BJT is a current-controlled device. FET is a voltage-controlled device.
JT has three terminals namely, FET has three terminals namely,
emitter, base, and collector. source, gate, and drain.
BJT has less thermal stability. FET has better thermal stability.
BJT is mainly used in low-power FET is mainly used in high-power
applications. It is used in and high-frequency applications. It
switching, amplification, filter is widely used in integrated
circuits, oscillators, etc. circuits, digital circuits, operational
amplifiers, measuring devices,
oscilloscopes, RF amplifiers, etc.