Hand Book

Basics of SiC Power Devices

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 Hand Book
Basics of SiC Power Devices

－Table of Contents－

Introduction ....................................................................................................................................... 1

1. What is Silicon Carbide? ............................................................................................................... 1

1.1 SiC Properties and Features ....................................................................................... 1
1.2 Features of SiC Power Devices ................................................................................... 2
2. Development Background and Advantages of SiC Power Devices .............................................. 2
2.1 Development Background of SiC Power Devices ........................................................ 2
2.2 Advantages of SiC ....................................................................................................... 3
3. What is SiC Schottky Barrier Diode? ............................................................................................ 3
3.1 Characteristics of SiC SBDs and Comparison with Si SBDs ....................................... 3
3.2 Comparison of SiC SBDs and Si PN Junction Diodes ................................................ 4
3.3 Reverse Recovery Characteristics of SiC SBD ........................................................... 5
3.3.1 Differences in Reverse Recovery Characteristics between SiC SBDs and
Si PNDs ................................................................................................... 5
3.4 Forward Voltage Characteristics of SiC SBDs ............................................................. 7
3.4.1 Difference in VF Characteristics of SiC SBD and Si PND ......................... 7
3.4.2 Improved VF Characteristics of SiC SBD ................................................ 8
3.5 Considerations on loss due to trr and VF .................................................................... 8
3.6 Evolution of SiC SBDs ................................................................................................. 9
3.7 Advantages of Using SiC SBDs ................................................................................. 10
3.8 Reliability of SiC SBDs ............................................................................................... 11
4. What is SiC MOSFET? ............................................................................................................... 11
4.1 SiC MOSFET Features .............................................................................................. 11
4.2 Comparison of Various Power Transistor Structures and Feature ............................ 13
4.3 Differences with Si MOSFET ..................................................................................... 14
4.3.1 Driving Voltage .......................................................................................... 14
4.3.2 Internal Gate Resistance ......................................................................... 14
4.4 Differences with IGBTs ............................................................................................... 15
4.4.1 Vd-Id Characteristics ............................................................................... 15
4.4.2 Switch-off Loss Characteristic ................................................................. 15
4.4.3 Switch-on Loss Characteristic ................................................................. 16
4.5 SiC MOSFET Body Diode Characteristics ................................................................. 16
4.5.1 Forward Characteristics of Body Diode ................................................... 16
4.5.2 Reverse Recovery Characteristics of Body Diode .................................. 17
4.6 Trench-structure SiC MOSFETs ................................................................................ 18

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4.7 Reliability of SiC MOSFETs ....................................................................................... 18

4.7.1 Gate Oxide Film......................................................................................... 18
4.7.2 Threshold Stability (Gate Positive Bias) .................................................. 19
4.7.3 Threshold Stability (Gate Negative Bias) ................................................. 19
4.7.4 Body Diode Conduction Degradation ...................................................... 19
4.7.5 Short-circuit Rating .................................................................................. 20
4.7.6 dV/dt Breakdown ..................................................................................... 20
4.7.7 Cosmic Ray Neutron-induced Single-event Effects ................................ 20
4.7.8 Electrostatic Discharge Rating ................................................................ 21
4.7.9 General Reliability Test Conditions .......................................................... 21
5. What is Full-SiC Power Module? ................................................................................................ 21
5.1 Switching Losses in Full-SiC Power Modules ............................................................ 21
5.2 Tips for Practical Use: Gate Driving ........................................................................... 22
5.2.1 Issues Relating to Gate Driving: False Gate Turn-On ............................... 22
5.2.2 Switching Speeds: Comparison with IGBTs .............................................. 23
5.2.3 Parasitic Capacitance: Comparison with IGBTs ...................................... 23
5.2.4 Mechanism of Gate Voltage Rising ......................................................... 24
5.2.5 Methods for Suppressing False Gate Turn-On ........................................ 25
5.2.6 Confirmation Using an Evaluation Circuit ................................................ 26
5.2.6.1 Effect of Suppressing Method ② .......................................... 26
5.2.6.2 Effect of Suppressing Method ③ .......................................... 26
5.3 Tips for Practical Use: Snubber Capacitors ............................................................... 27
5.3.1 What is Snubber Capacitor? ..................................................................... 27
5.3.2 Examples of Snubber Capacitors .............................................................. 28
5.5.3 Examples of Snubber Capacitor Installation ............................................. 28
5.3.4 Example of Snubber Capacitor Effect ..................................................... 29
5.4 Tips for Practical Use:
The Effects of Specialized Gate Drivers and Snubber Modules ................................ 30
5.4.1 Driving Specifications and Basic Configuration of Full-SiC Modules ........ 30
5.4.2 Specialized Gate Driver Board and Ceramic Snubber Capacitor Module 30
5.4.3 Effect of Specialized Gate Driver and Snubber Module ............................ 31
5.5 Support Tools: Full-SiC Module Loss Simulator ........................................................ 31
Conclusion ...................................................................................................................................... 32
Revision History .............................................................................................................................. 33
Notes ............................................................................................................................................... 34

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 Hand Book
Basics of SiC Power Devices

Introduction 1. What is Silicon Carbide?

Recently, diodes, transistors and modules for handling Silicon carbide (SiC) is a relatively new semiconductor
large power with small loss, known as “power devices” or material; to understand SiC power devices, we will first
“power semiconductors”, have gathered attention. The discuss the physical properties and characteristics of the
reason is that power devices with higher efficiency and material.
higher performance are needed to address “energy
1.1 SiC Properties and Features
savings” and “miniaturization”, which are issues
throughout the world. SiC is a compound semiconductor material consisting of
silicon (Si) and carbon (C). The chemical bond in SiC is
What specific definitions we should use to categorize
extremely strong, and the material is thermally,
these “power devices are certainly no clear categories,
chemically and mechanically stable. SiC exists in a
but for example there are diodes and MOSFETs for AC-
variety of polymorphic crystalline structures called
DC conversion or power switching with high voltage and
polytypes, with different physical properties. The 4H-SiC
high power, and then there are power modules that are
polytype is deemed optimal for use in power devices.
modularized for output stages of inverter.
Table 1 compares 4H-SiC with Si and other
This handbook provides basic knowledge of "SiC power semiconductor materials that are recently attracting
devices" using silicon carbide (SiC) semiconductors, interest.
which are superior to conventional silicon (Si)
semiconductors for power device applications.
SiC is a compound semiconductor that is extremely
stable thermally, chemically, and mechanically, so the
parameters that are important for power devices are
extremely good. As elements, they can have low
resistance, high speed operation, and high-temperature
operation surpassing Si semiconductor devices, and they
can greatly reduce energy loss in various types of power
conversion ranging from power transmission to end Table 1. Physical properties of various semiconductor
devices. materials and examples of applications

For power devices using SiC semiconductor, there was

volume production and shipment of SiC Schottky barrier
diodes and SiC MOSFETs in 2010*1, and volume
production of “full-SiC” power modules using SiC
MOSFETs and SiC Schottky barrier diodes in 2012*1.
There has already been volume production of third-
generation devices, so their evolution is accelerating.
(*1: initial volume production by ROHM either in Japan or globally)

The contents of the explanation will include basic matters

such as the properties and advantages of SiC for
engineers who are not yet familiar with SiC, followed by
an explanation of SiC Schottky barrier diodes and SiC
MOSFETs, including a comparison with Si devices in Figure 1. 3-inch 4H-SiC wafer
terms of their characteristics and usage. Finally, a full SiC
The yellow-highlighted part of Table 1 compares Si and
module that is optimized as a power stage and has
SiC. Characteristics and values in blue are parameters
various advantages will be explained.
that are particularly important for uses in power devices.
SiC power devices are extremely useful for power saving As the numerical values indicate, where these
and miniaturization, and we hope to cultivate your parameters are concerned SiC is superior. And in contrast
understanding and provide you a chance to use them as with other new materials, but similarly to Si, a feature of
familiar devices. SiC is the ability to control the p-type and n-type regions

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Basics of SiC Power Devices

necessary for device fabrication over wide ranges. For Further, the band gap is about three times that of Si,
these reasons, SiC is anticipated to be a material for use making possible operation at higher temperatures than
in power devices that go beyond the limits of Si. Below is for Si devices. At present, due to constraints imposed by
a summary of SiC's features. the thermal resistance of packages, operation is
guaranteed at 150 ℃ to 175 ℃ , but as package
 IV-IV group compound semiconductors in which Si and
technology advances, guaranteed operation at 200 ℃
C bond 1-to-1
and above will become possible.
 Close-packed structures in which Si C atom pairs form
Important points have been explained briefly. The
unit layers
discussion may have been a bit difficult for persons
 Various polytypes exist; the 4H-SiC polytype is optimal without a background in material properties and
for power devices processes, but even without understanding all the details,
 Bonding strength is extremely high ⇒ thermally, you will be able to make use of SiC power devices.
chemically, mechanically stable <Summary>
– Thermal stability: No liquid phase at ordinary  The physical properties of SiC are well-suited to power
temperatures, sublimation at 2000℃ devices.

– Mechanical stability: Mohs hardness (9.3) near that  Compared with Si semiconductors, losses are low, and
of diamond (10) dynamic characteristics in high-temperature
environments are excellent.
– Chemical stability: Inert in the presence of nearly all
acids and alkalis 2. Development Background and Advantages of SiC
Power Devices
1.2 Features of SiC Power Devices
SiC power devices are capable of high withstand voltages,
With dielectric breakdown electric field strength low resistances and fast operation exceeding Si power
approximately ten times higher than that of Si, SiC can devices, and can operate at higher temperatures as well.
achieve very high breakdown voltage from 600 V to We will talk about the background to development of SiC
thousands of volts. Doping concentrations can be made devices and their specific advantages.
higher than those in Si devices, and drift layers can be
made thin. Nearly all of the resistance component of a 2.1 Development Background of SiC Power Devices
high voltage power device is the resistance of the drift Previously we explained that by using SiC in power
layer, and the resistance value increases in proportion to devices, power conversion can be performed with lower
the thickness of the drift layer. When using SiC, the drift losses than is possible using conventional Si power
layer can be made thin, and so a device with a high devices. This is the main reason why SiC semiconductors
voltage and extremely low turn-on resistance per unit have been commercialized for power devices. And it is
area can be fabricated. Theoretically, for a given high easy to imagine that the background to this is the energy
voltage, the drift layer resistance per unit area can be conservation measures that the whole world is facing.
reduced to 1/300 of that for Si.
Taking as examples low-power DC/DC converters, the
In a Si power device, IGBTs (insulated-gate bipolar spread of mobile devices has resulted in conversion
transistors) and other minority-carrier devices (bipolar efficiencies that exceed 90% as a matter of course.
transistors) have mainly been used in the past in order to However, it is thought that there is still room for
alleviate the increase in turn-on resistance that improvement of the efficiency of high-voltage and large-
accompanies higher breakdown voltages. However, the current AC/DC converters. It is well known that directives
large switching losses give rise to heat generation for energy conservation, centered on the EU, have
problems, imposing limits on high-frequency driving. resulted in urgent demands for energy efficiency including
Using SiC, such fast majority-carrier devices as Schottky reduced standby power consumption of electric and
barrier diodes and MOSFETS can be designed for high electronic equipment.
voltages, making possible the simultaneous attainment of
Given such circumstances, reducing energy losses that
a high voltage, low turn-on resistance, and fast operation,
occur during power conversion is an urgent order of
parameters that entailed trade-offs in silicon devices.
business, and to this end, naturally a material that

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Basics of SiC Power Devices

transcends the limits of Si must be utilized in power reducing energy consumption as a result of installation
devices. locations, transportation and the like is another major goal.
By using SiC power devices, switching losses can be cut <Summary>
by 85% compared for example with IGBTs. As indicated  SiC has been developed as one solution to energy-
in this example, there can be no doubt that SiC power related problems.
devices are one solution to energy problems.
 SiC power devices have the great advantage of not
2.2 Advantages of SiC only reducing losses but also contributing to the
miniaturization of equipment.
The use of SiC power devices enables a significant
reduction in energy loss. This great advantage comes 3. What is SiC Schottky Barrier Diode?
from the characteristics of SiC power devices as
In this chapter, we will explain what SiC Schottky barrier
described above: low resistance, high-speed operation,
diodes (hereafter referred to as SiC SBDs) are and how
and high temperature operation.
they compare with Si diodes.
We proceed with a comparison with Si. "Low resistance"
3.1 Characteristics of SiC SBDs and Comparison
leads directly to low losses, but for the same resistance
with Si SBDs
value, the area of an element (chip) can be made smaller.
When handling large amounts of power, sometimes First, the structure of the SiC SBD is explained. As
power modules are used, in which multiple transistors shown in Figure 3, a metal is bonded (Schottky junction)
and diodes are incorporated into a module. As an to a semiconductor, SiC, to obtain a Schottky barrier.
example, for the same capacity, a SiC power module can The structure is basically the same as that of a Si
be designed to be about 1/10 the size of an Si module. Schottky barrier diode (hereafter referred to as Si SBD),
and the key feature is the same: high speed.
Where "fast operation" is concerned, by raising the
switching frequency, smaller size peripheral components The features of SiC SBDs are principally excellent high-
such as transformers, coils and capacitors can be used. speed operation combined with a high voltage. In order to
There are examples in which sizes could actually be raise the breakdown voltage of a Si SBD, the n-type layer,
shrunk to 1/10 or so. shown in Figure 3, is made thicker, and the carrier
concentration is lowered; but this means a high
"High-temperature operation" means that operation at
resistance value, a higher forward voltage, and other
higher temperatures is allowed, and so heat sinks and
changes resulting in large losses and characteristics not
other cooling mechanisms can be simplified.
suited to practical use. Therefore, the breakdown voltage
of Si SBDs is said to be almost limited to 200V. On the
other hand, SiC has a dielectric breakdown field intensity
ten times greater than that of silicon, and so SiC devices
can have high voltages while retaining characteristics
well-suited for practical use. The thicknesses of the n-
type layer of the Si SBD and the n-type layer of the SiC
SBD in Figure 3 are schematic images of how SiC can be
made thin but with high breakdown voltage.

Figure 2. Advantages of SiC power devices

The use of SiC not only has the obvious advantages of

improved efficiency and the ability to handle more power,
but also the ability to significantly reduce the size of the
device by using SiC if the same power is to be handled.
As opposed to direct energy conservation, indirectly

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Figure 4. Structure of Si PND

Figure 3. Comparison of SiC SBD and Si SBD structure

3.2 Comparison of SiC SBDs and Si PN Junction

Diodes
Si diodes having breakdown voltages comparable to or
exceeding those of SBDs are PN-junction diodes (here
abbreviated to "PNDs"). Figure 4 shows the structure of a
Si PND. In an SBD, only electrons move to cause current
to flow, but in a PND, electrons and holes cause current
Figure 5. Withstand voltage range of SiC SBDs
to flow. Through the accumulation of holes, which are the
and various Si diodes
minority carrier, in the n layer, the resistance value falls.
Because of this, a high withstand voltage and low Figure 5 shows the range of withstand voltages that SiC
resistance are achieved simultaneously, but the turn-off SBDs can handle in comparison with Si SBDs, PNDs, and
speed is slow. FRDs. Since SiC SBDs have both high speed and high
withstand voltage, Err (recovery loss) can be significantly
When the operating speed of a PND is raised, the result
reduced and switching frequency can be increased,
is a fast-recovery diode (here abbreviated to “FRD”); even
allowing the use of small transformers and capacitors,
so, however, the reverse recovery time (here abbreviated
contributing to the miniaturization of devices.
to “trr”) and other characteristics are inferior to those of
SBDs. As a consequence, much effort is devoted to <Summary>
studying trr losses in Si PNDs with high withstand  Features of SiC SBDs are excellent high-speed
voltages, and the inability to handle fast switching operation combined with a high voltage.
frequencies in application for switching power supplies  Compared with Si PNDs having high voltages, SiC
remains a problem. SBDs afford excellent reverse.

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Basics of SiC Power Devices

3.3 Reverse Recovery Characteristics of SiC SBD The waveforms in Figure 6 show the current variation with
time during reverse recovery for SiC SBDs and FRDs,
The reverse recovery characteristics of SiC SBDs are
which are high-speed Si PNDs. It can be seen that the
explained based on a comparison with Si PNDs. Since
SiC SBD, indicated by the red line, has less reverse
the reverse recovery characteristic is a fundamental and
current and shorter trr. This characteristic is a
important parameter for diodes, especially for high-speed
consideration because the reverse current is a loss.
type diodes, it is useful to understand not only the
numerical comparison of trr, but also its waveform and Next, a cross-sectional view of each diode is used to
temperature characteristics when using the diode. illustrate the differences in operation. Figure 7 shows the
movement of electrons and holes when the bias of the Si
3.3.1 Differences in Reverse Recovery
PND is shifted from forward to reverse bias.
Characteristics between SiC SBDs and Si PNDs
Reverse recovery is a phenomenon in which the diode is
not immediately and completely turned off when it enters
a reverse bias state, but the reverse current flows for a
certain period of time. trr is the time during which the
reverse current flows. We have already mentioned that
the trr of SiC SBDs is faster than that of Si PNDs including
Si FRDs, but we will explain the reason and actual
characteristics.
Differences in the value of trr and the reverse recovery
characteristic are, to simplify, due to differences in the
diode structure. An explanation would involve a
discussion of electrons and holes moving through the
semiconductor, but we will begin by using waveform
diagrams to review the differences in the reverse
Figure 6. Comparison of trr characteristics
recovery characteristics of SiC SBDs and Si PNDs.
between SiC SBD and Si FRD

Figure 7. Si PND (FRD, etc.) during reverse bias transition

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During a forward bias, carriers are injected and current These differences in reverse recovery times are all due to
flows through the recombination of holes and electrons. the diode structures. Hence reverse recovery is also rapid
When a reverse bias occurs, holes (the minority carrier) for a Si SBD. However, the withstand voltage of Si SBDs
in the n layer return to the p layer, but this takes some is about 200 V, and the devices cannot be used at higher
time, and a current flows until the holes finally return voltages. In contrast, by using SiC, SBDs having high
(some are annihilated due to the finite lifetime). This is the withstand voltages of over 600 V can be manufactured.
reverse recovery current. This is a major advantage of SiC SBDs.
Figure 8 shows transition to reverse bias of an SiC SBD. Next, we present data relating to the temperature
Because of the Schottky barrier structure, there is no PN dependence and the current dependence of the reverse
junction, and so there are no minority carriers, and during recovery characteristic in Figure 9.
reverse bias there is only the return of electrons, which
are the majority carrier in the n layer. Hence only a very
short reverse recovery time is necessary, and compared
with a Si PND, the device is turned off for a much shorter
time.

Figure 8. SiC SBD in reverse bias transition

Figure 9. Temperature and current dependence of reverse recovery characteristics of Si FRD and SiC SBD

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The waveform diagram and graph in the upper part of

Figure 9 show the reverse recovery characteristics of
each diode versus temperature.
For a Si FRD, as the temperature rises the carrier
concentration increases, and more time is accordingly
required for reverse recovery; the reverse current and trr
are both larger at 125℃ relative to the values at room
temperature (RT). However, because SiC itself has
almost no temperature dependence, and so a SiC SBD
exhibits almost no change in reverse current
characteristic. The graph of right side plots the differences
in temperature characteristics of trr; on comparison with
two types of Si FRD, we see that the trr of the SiC SBD
has essentially no temperature dependence.
The lower waveform diagrams of Figure 9 show the
relation to the forward current IF during forward biasing.
Here too, we see that the SiC SBD is almost completely
unaffected.
By the way, although we have expressed that there is
almost no reverse current flow in SiC SBDs, in reality
there is not none at all. The waveform diagram clearly
shows that the reverse current is much less than that of
Si FRDs, but this is because parasitic junction
capacitance and other factors inevitably exist in a diode,
and this has an effect.
<Summary>
 An SiC SBD has a faster trr and much smaller reverse
recovery current compared with a Si PND (FRD), and
so losses are small. Figure 10. Comparison of VF characteristics
between SiC SBD and Si FRD
 The reverse recovery characteristics (trr and reverse
recovery current) of SiC SBD have almost no Figure 10 is graphs of the VF characteristic for the forward
temperature dependence and current dependence. current of SiC SBD and Si FRD devices. The data was
measured under eight different temperature conditions,
3.4 Forward Voltage Characteristics of SiC SBDs
ranging from 25℃ to 200℃.
Forward voltage (hereafter VF) is the most fundamental
In the case of the SiC SBD, as the temperature rises, the
characteristic of a diode, and the VF characteristics of SiC
VF at which IF begins to flow falls somewhat, but the
SBDs are explained by comparing them with those of Si
resistance increases, so that the slope is gentle, and the
PNDs.
VF rises over the normal IF usage range.
3.4.1 Difference in VF Characteristics of SiC SBD and
In the Si FRD, however, as the temperature rises the VF
Si PND
simply falls. As the curves in the graph indicate, the slope
Ideally, the VF of a diode should be as close to zero as is nearly the same at all temperatures, and we see that
possible and stable with respect to temperature; but of the VF decreases constantly.
course it is not zero, and fluctuates with temperature. In
These characteristics both depend on the physical
order to gain an understanding of VF characteristics of
properties and the structures of the devices, and in each
Sic SBDs, we compare them with Si PND fast-recovery
case, there are advantages and drawbacks. However, the
diodes (FRDs).
decrease in VF may lead to an increase in IF, and even if
there is a slight decrease in loss due to the decrease in

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VF, the increase in heat generation exceeds the decrease

in VF, and the decrease in VF may be accelerated,
resulting in an increase in IF.
On the other hand, in the SiC SBD the VF rises with rising
temperature, so there is no thermal runaway. However,
there is the drawback that the higher VF means the IFSM
(maximum surge forward current) is lower than that of the
Si FRD.
3.4.2 Improved VF Characteristics of SiC SBD
In order to enhance the characteristics of the SiC SBD
with its excellent basic properties, and further improve
ease of use, we have been developing next-generation
devices with lower VF values. Whereas for ROHM's first-
generation products and similar products of other
manufacturers, the VF is 1.5 V for an IF of 10 A, the VF
of second-generation devices is lowered to 1.35 V. As
reference values, The IF vs. VF characteristics at 25℃ Figure 11-2. Improved VF Characteristics of SiC SBD
and 125℃ are shown in Figure 11-1 and 11-2. The red 3.5 Considerations on loss due to trr and VF
curves represent the VF characteristics of ROHM's
Here, we would like to consider the loss related to VF and
second-generation SiC SBDs.
trr characteristics. There is a reason why we show the
comparison with Si PND/FRD regarding trr and VF for the
explanation of SiC SBDs. As shown in "Figure 5:
Withstand voltage range of SiC SBD and various Si
diodes" in "3.2 Comparison of SiC SBDs and Si PN
Junction Diodes", Si PND/FRD and SiC SBD cover
almost the same withstand voltage, which means they
can be used for the same applications. In other words,
SiC SBDs can basically replace Si PNDs/FRDs in the
areas currently covered by Si PNDs/FRDs.
In particular, selecting the optimum diode for areas in
which Si FRDs and SiC SBDs compete, such as
applications where fast operation is important, an
understanding of the characteristics of the two is vital.
And of course the "reduction of losses" is, among the
various issues we have studied, the most important goal.
The basic losses are switching loss and conduction loss.
Figure 11-1. Improved VF Characteristics of SiC SBD trr is related to switching loss, and VF is related to
conduction loss. For Si FRDs and SiC SBDs, these
relationships are shown in the graph in Figure 12.

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Figure 12. trr and VF vs. loss for Si FRD and SiC SBD

The faster the trr and the lower the VF value, the lower
are the total losses for the device. In the Si FRD, a faster
trr means the VF is higher. However, in a second-
generation SiC SBD, the VF is lowered from 1.5 V to 1.35
V while maintaining the fast trr value of conventional SiC
SBD devices. In this comparison, it can be seen that the
second generation SiC SBDs have the potential to reduce
losses the most.
<Summary> Figure 13. Evolution of SiC SBDs
 The VF of an SiC SBD rises with temperature, whereas
the VF of an Si PND (FRD) falls. Through innovations in manufacturing processes,
second-generation SiC SBDs retain leakage currents and
 The increase in the VF of an SiC SBD at high trr performance comparable to previous devices while
temperatures causes the IFSM to decline, but there is lowering VF by approx. 0.15 V. As a result, VF-induced
no thermal runaway, such as occurs in Si PNDs (FRDs), conduction losses are improved.
the VF of which declines.
In the third generation, a JBS (Junction Barrier Schottky)
 The reduction of VF in SiC SBD contributes to loss structure was adopted with the aim of improving IFMS
reduction. and leakage current (IR). The JBS structure essentially is
3.6 Evolution of SiC SBDs effective with respect to IFSM and IR, but in addition the
low-VF characteristic achieved in the second generation
So far, we have explained the characteristics of SiC SBDs
was further improved. Typical values at Tj=25℃ are the
using Si diodes as a comparison to understand SiC SBDs.
same, but at Tj=150℃, VF is reduced 0.11 V compared
We have also shown that SiC SBDs themselves have
with second-generation devices. That is, there are further
evolved over the generations, and their performance has
advantages for operation under high-temperature
improved. Here, we describe the evolution of SiC SBDs.
conditions. A graph of the reverse voltage VR versus the
As of January 2023, more than 50 models of ROHM's SiC reverse (leakage) current IR is shown in Figure 14, and
SBDs of the second generation and more than 20 models Table 2 comparing numerical values of improved
of the third generation are in mass production and supply. parameters, for second- and third-generation SiC SBDs.
The graphs in Figure 13 compare the VF vs. IF and VF
vs. IFSM (surge current withstand capability)
characteristics of the first through third generations.

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Figure 14. Comparison of 2nd and 3rd generation Table 2. Comparison of SiC SBD 2nd and
SiC SBDs with VR and IR 3rd generation characteristics values

Furthermore, a graph showing the temperature 3.7 Advantages of Using SiC SBDs
characteristics of VF is shown in Figure 15. The graph on
We have explained SiC SBDs by comparing their
the left is for the second-generation SCS210AG, and that
characteristics with those of Si diodes. Here, we
on the right is for the third-generation product SCS310AP,
summarize the advantages of using SiC SBDs. Basically,
both at 650 V/10 A. We see that the third-generation
the advantage of using SiC SBDs to replace Si
product has a steep VF-IF curve gradient at high
PNDs/FRDs is the high-speed performance of SiC SBDs.
temperatures and a lower VF for the same IF, an
improvement over the second-generation device.  The trr is fast, so that recovery losses can be
dramatically reduced, for higher efficiency
<Summary>
 ROHM SiC SBDs have already evolved to the third  For a similar reason, the reverse current is small so that
generation. noise is low, and noise/surge suppression components
can be eliminated, enabling enhanced miniaturization
 Third-generation products offer improved TFMS and
reduced leakage currents, and further reduce the low  High frequency operation enables miniaturization of
VF values achieved in the second generation. inductors and other peripheral components

Figure 15. Comparison of VF vs IF temperature characteristics of 2nd and 3rd generation SiC SBDs

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Further, due to their very stable operation with respect to performance, reliability is another important factor. In
temperature, these devices are compatible with particular, power devices are intended to handle large
automotive applications, and the advantages of SiC amounts of power, and so must attain satisfactory
SBDs are being exploited in actual HV/EV/PHV onboard reliability.
charging circuits. Figures 16 and 17 show examples and
Because SiC does not have a long history as a
images.
semiconductor material, and because it does not have
much of a track record compared with Si power devices,
there may not be much awareness of the level of its
reliability. Therefore, ROHM basically conducts reliability
tests in accordance with the test conditions of JEITA ED-
4701.
JEITA ED-4701 is a standard for "environmental and
endurance test methods for semiconductor devices", and
describes testing methods for evaluating semiconductor
devices for industry and consumers. This standard is
widely adopted in Japan. In other words, it has been
confirmed that sufficient reliability is ensured in the same
reliability tests as those for existing Si transistors and ICs.
By the way, where Si SBDs are concerned, you may have
heard that there are failure modes relating to dV/dt or to
dI/dt. With regard to the former, when a high dV/dt is
applied, the failure mode entails breakdown of the outer
peripheral structure of the SiC SBD. However, in studies
conducted up to this time, ROHM SiC SBDs have not
been found to breakdown in this mode even for dV/dt
Figure 16. Advantages of using SiC SBDs: values up to approximately 50 kV/μs.
Example of a PFC circuit
As for dI/dt, in Si FRDs the recovery current Irr is large
when dI/dt is high, so that the failure mode is caused by
current concentration. Hence there are concerns about
the possibility of a similar failure mode. But in SiC SBDs,
the occurrence of such failure is regarded as unlikely
because the recovery current is extremely small.
4. What is SiC MOSFET?
The role of transistors in power conversion circuits is vital,
and various efforts are being made to improve transistors
in order to reduce losses and enable smaller application
size. The advantages of SiC semiconductors have been
described earlier, including low losses, fast switching, and
high temperature operation, all of which are very useful in
their benefit power conversion applications. In this
chapter, we will discuss SiC MOSFETs in comparison
with other power transistors.
Figure 17. Advantages of using SiC SBDs:
Example of on-board charging circuit
4.1 SiC MOSFET Features

3.8 Reliability of SiC SBDs Figure 18 shows the breakdown voltage region of a
typical Si power transistor and SiC MOSFET, a
When evaluating semiconductor devices, in addition to comparison with the same intent as Figure 5, also used
the electrical and mechanical specifications and in the SiC SBD chapter.

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At present, SiC MOSFETs are regarded as useful from

voltages of 600 V upward, and in particular 1 kV and
higher. Where advantages are considered, we will
compare these devices with Si IGBTs (Insulated gate
bipolar transistors), which are currently the mainstream
for elements rated at 1 kV and higher. In contrast to IGBTs,
SiC MOSFETs are effective in reducing losses during
switch-off and can operate at higher frequencies, thus
enabling smaller applications. Compared with SJ
MOSFETs (super junction MOSFETs) with comparable
rated voltage, ON-resistance values are low, and so
reduced chip areas and greatly reduced recovery losses
are possible for the same ON-resistance.
Table 3 also summarizes the characteristics of power
devices with rated voltages ranging from 600 V to 2000 V.
In the radar charts, RonA is the ON-resistance per unit
area (a parameter representing losses during conduction),
Figure 18. Withstand voltage range of SiC MOSFETs
BV is the rated device voltage, Err is the recovery loss,
and various power transistors
and Eoff is the loss during switching off. SiC devices are
pretty much perfect on all counts; and this comparison in
no way overstates the performance of SiC devices.

Table 3. Features of power devices with rated voltages ranging from 600 V to 2000 V

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4.2 Comparison of Various Power Transistor Figure 20 shows a graph of on-resistance and withstand
Structures and Features voltage based on the physical properties and process
specifications used by each transistor. The graph shows
Figure 19 compares the structures, rated voltages, on-
that, theoretically, SiC DMOS can make transistors with
resistances, and switching speeds of various power
higher withstand voltage and lower on-resistance.
transistors.
However, the current SiC DMOS has characteristics in
Even in the bracket of power transistors, structures differ the range circled by the oval, and further performance
depending on the process technology used, and the improvement is expected with future advancements.
electrical characteristics are also different. Incidentally,
DMOS is a general element structure that is a planar-type
MOSFET. However, in recent years, with Si power
MOSFETs, both a high voltage and a reduced ON-
resistance can be obtained, and super junction structure
MOSFETs (hereafter SJ MOSFETs) have come into
widespread use. We have presented a DMOS structure
as an example of a SiC MOSFET, but at present, ROHM
is mass-producing trench-structure SiC MOSFETs with
further improved characteristics. We will be describing
these devices in more detail in the future.
Figure 20. On-resistance and withstand
Features of the different element types are as described voltage of each transistor based on
in the radar charts above. ON-resistance is an issue with physical properties and process specifications
Si DMOS’s, and as explained above, by adopting a SJ
MOSFET structure, the ON-resistance is improved. <Summary>
IGBTs have superior ON-resistances and rated voltages,  The features of power transistors differ depending on
but switching speed is a problem. SiC DMOS’s are the materials and structures.
switching elements which excel with respect to rated  There are various advantages and disadvantages
voltage, ON-resistance, and switching speed alike, and where characteristics are concerned, but SiC MOSFETs
have the further major advantage of satisfactory exhibit excellent characteristics overall.
operation at high temperatures.

Figure 19. Comparison of various power transistor structures and features

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4.3 Differences with Si MOSFET the gate resistance value is inversely proportional to the
chip size, so that the resistance is higher for smaller chips.
Rather than just presenting detailed data, readers who
Because, for devices with equivalent performance, a SiC
have not yet used SiC MOSFETs will probably have
MOSFET chip is small compared with an Si device, the
questions about how they differ from Si MOSFETs with
gate capacitance is small, but the internal gate resistance
respect to driving methods and so on. Here we will explain
is higher. For example, a device rated at 1200 V and 80
two important points relating to driving when comparing
mΩ (an S2301 bare-die product) has an internal gate
SiC MOSFETs with Si MOSFETs.
resistance of about 6.3 Ω (see Figure 22).
4.3.1 Driving Voltage
Compared with their Si counterparts, SiC MOSFETs have
a lower drift layer resistance but a higher channel
resistance, and so the higher the gate-source voltage Vgs,
which is the driving voltage, the lower is the on-resistance.
Figure 21 indicates the relation between on-resistance
and Vgs for SiC MOSFETs.

Figure 22. Example of SiC MOSFET

internal gate resistance

While not a statement that is limited to SiC MOSFETs, the

MOSFET switching time depends on the total gate
resistance value, which is sum of the external gate
resistance and the internal gate resistance discussed
Figure 21. Relationship between on-resistance
above. The internal gate resistance of a SiC MOSFET is
and Vgs of SiC MOSFETs
higher than that of a Si MOSFET, and so in order to
The on-resistance changes (declines) gradually from a achieve fast switching, the external gate resistance must
Vgs of about 20 V, and approaches a minimum. The gate be kept as low as possible, on the order of a few Ohms
driving voltage for IGBTs and Si MOSFETs in general is or so. However, the external gate resistance also serves
around 10 to 15 V, but in the case of SiC MOSFETs, as protection from surge voltages that may be applied to
driving at Vgs = 18 V or so is recommended in order to the gate, and so the resistance should be chosen with
obtain a fairly low on-resistance. In other words, one due attention paid to surge protection.
important difference with Si MOSFETs is the need for a
<Summary>
high driving voltage. When replacing a Si MOSFET with
 In order to operate with a low on-resistance for a SiC
a SiC MOSFET, the gate driving circuit must also be
MOSFET, the Vgs must be set higher than that for a Si
studied.
MOSFET, to around 18 V or so.
4.3.2 Internal Gate Resistance
 The internal gate resistance of a SiC MOSFET is higher
The internal gate resistance Rg of an SiC MOSFET (chip) than that of a Si MOSFET, and so the external
itself depends on the sheet resistance of the gate resistance Rg is set low; but surge protection should
electrode material and the chip size. For a given design, also be considered.

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4.4 Differences with IGBTs

Following the differences from Si MOSFETs, the
differences from IGBTs are explained.
4.4.1 Vd-Id Characteristics
The Vd-Id characteristic is one important basic
characteristic of transistors. Figure 23 shows the Vd-Id
characteristics of SiC MOSFETs, SJ MOSFETs, and
IGBTs at 25℃ and 150℃.
In the graph of characteristics at 25 ℃ , Id increases
linearly with Vd (Vds) for the SiC and Si MOSFETs, but
because the IGBT has a threshold voltage, in the low-
current region the Vds is lower for MOSFETs (as
compared with the collector current and collector-emitter
voltage of an IGBT). Another way to look at it., the Vd-Id
characteristic is also the on-resistance characteristic. In
conformance with Ohm's laws, if for a given Id the Vd is
low, the on-resistance is low, indicating that the steeper
the slope of the characteristic curve, the lower is the on-
resistance.
The IGBT low-Vd (or low-Id) region--in this example, the
region up to a Vd of about 1 V--is a region in which we
can overlook in general. In high-voltage, large-current
applications, this poses no problems, but when the power
required by a load for power supply ranges from low to
high power levels, the efficiency in the low-power region
suffers. In contrast, SiC MOSFETs maintain a low on-
resistance over a broad range.
Moreover, at 150 ℃ , the slopes of the characteristic
curves of both the SiC MOSFET and Si MOSFET are
gentler, and so it is seen that the on-resistance increases.
However, the SiC MOSFET shows less change from 25℃ Figure 23. Vd-Id characteristics of SiC MOSFETs,
than the Si MOSFET does. The slopes of the SJ MOSFETs, and IGBTs at 25℃ and 150℃
characteristic curves of the SiC MOSFET and Si 4.4.2 Switch-off Loss Characteristic
MOSFET are not so different in a 25℃ environment, but
It is well known, as a basic property of IGBTs, that when
the difference increases with temperature. We see that at
an IGBT is switched off, a tail current flows due to the
high temperatures the change in on-resistance of the SiC
device structure, and therefore the switching loss is
MOSFET is smaller than the Si MOSFET.
increased. Figure 24 shows the waveforms of the IGBTs
and SiC MOSFETs at switch-off. In the case of an SiC
MOSFET there is in principle no tail current, and so
without this contribution, clearly the switching loss is
extremely smaller. In this example, the combination of a
SiC MOSFET and a SBD reduces the switching-off loss
Eoff by about 88% in comparison with the combination of
an IGBT and a FRD. Also note that the tail current of
IGBTs is even higher at higher temperatures.

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have an advantage over IGBTs at low currents.

 Switching losses of SiC MOSFETs can be greatly
reduced compared with IGBTs.
4.5 SiC MOSFET Body Diode Characteristics
We will discuss the forward characteristics and reverse
recovery characteristics of the body diodes of SiC
MOSFETs. MOSFETs, whether SiC MOSFETs or
otherwise, have a body diode between the drain and the
source, as indicated in Figure 26. As a consequence of
the MOSFET structure, the body diode is formed by the
pn junction between the source and drain, and is also
called a parasitic diode or an internal diode. The
Figure 24. Switch-off loss characteristics of IGBTs
performance of the body diode is one important
and SiC MOSFETs
parameter of the MOSFET, and is important when using
4.4.3 Switch-on Loss Characteristic the MOSFET in an application.
Next, we consider the loss at switch-on (Figure 25). When
an IGBT is switched on, the part of the Ic current (blue
curve) encircled by the red dashed line flows. This is due
largely to the diode recovery current, and represents a
large loss upon switch-on. In SiC MOSFETs, the
switching-on losses are about 34% lower, due in part to
the faster recovery characteristics of the SiC SBCs
connected in parallel. Note that the switching-on loss
when FRDs are paired increases at high temperatures,
as does the tail current of IGBTs, so the same precautions
should be taken. In any case, we see that with respect to Figure 26. Body diode of SiC MOSFET
switching loss characteristics, SiC MOSFETs are superior
4.5.1 Forward Characteristics of Body Diode
to IGBTs. The data presented here are results from
ROHM's testing environment. Depending on the driver Figure 27 shows the Vds-Id characteristics of a SiC
circuit or various other conditions, results may be different. MOSFET. With the source as reference, a negative
voltage is applied to the drain, and the body diode is in a
forward-biased state. In the graph, the green trace for
which Vgs = 0 V shows what is essentially the forward
characteristics of the body diode. Vgs is 0 V, that is, the
MOSFET is in the off state and no channel current is
flowing, and so under these conditions the Vd-Id
characteristics can be said to be the VF-If characteristics
of the body diode. Since SiC has a large band gap, VF is
high compared with that of Si MOSFETs.
On the other hand, when 18 V is applied across the gate
and source so that the SiC MOSFET is turned on, the
current flowing in the channel with lower resistance is
dominant, instead of the body diode. Below are also
Figure 25. Switch-on loss characteristics of IGBTs shown MOSFET cross-sectional diagrams to aid
and SiC MOSFETs understanding of the structural aspects of these different
states.
<Summary>
 The on-resistance characteristic of SiC MOSFET Vd-Id
characteristics changes linearly, and SiC MOSFETs

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4.5.2 Reverse Recovery Characteristics of Body

Diode
Another important characteristic of the body diode of an
SiC MOSFET is the reverse recovery time (trr). It was
previously explained in the section on “3. What is SiC
Schottky Barrier Diodes” that trr is an important
parameter relating to the diode switching characteristics.
Of course, because the body diode of an SiC MOSFET
has a pn junction, there is a reverse recovery
phenomenon, and this appears as trr.
The trr characteristics of a 1000 V rated Si MOSFET and
of the SCT2080KE SiC MOSFET are compared in Figure
28. The trr of the Si MOSFET in this example is long, and Figure 28. trr characteristics of SiC MOSFET
a large current Irr flows. In contrast, the body diode of the and Si MOSFET body diode
SCT2080KE SiC MOSFET is extremely fast. Both trr and
<Summary>
Irr are so small as to be negligible, and the recovery loss
 The forward characteristic VF of the body diode of a SiC
Err is greatly reduced.
MOSFET is high compared with that of an Si MOSFET.
 The trr of a SiC MOSFET body diode is fast, and the
recovery loss can be reduced relative to that of an Si
MOSFET.

Figure 27. VF characteristics of SiC MOSFET body diode (Vgs=0V)

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4.6 Trench-structure SiC MOSFETs 4.7 Reliability of SiC MOSFETs

SiC MOSFETs continue to evolve, and ROHM is now We explain the reliability of SiC MOSFETs. The
mass-producing SiC MOSFETs that adopt the world's first information and data presented here is for ROHM SiC
trench gate structure. Following the second generation MOSFET products. Development of SiC power devices,
with a single trench structure, the third generation with a including MOSFETs, is constantly progressing, and
unique double trench structure, and now the fourth should readers have any questions or uncertainties, they
generation with further evolution are in mass production. are urged to ask us related questions.
Trench structures are widely used in Si MOSFETs, and 4.7.1 Gate Oxide Film
the use of trench structures in SiC MOSFETs had
At ROHM, formation of gate oxide films for SiC MOSFETs
attracted attention due to the effectiveness in lowering the
has been accomplished with reliability comparable to that
on-resistance. However, in general single-trench
of Si MOSFETs through process development and
structures, the electric field is concentrated at the bottom
optimization of device structures.
of the gate trench, and so long-term reliability has been
an issue. But in the double-trench structure developed by As a result of CCS TDDB（Constant Current Stress Time
ROHM, a trench structure is provided in the source area Dependent Dielectric Breakdown ） tests, the QBD
as well, so that electric field concentration at the bottom (Charge to Breakdown), an index of the reliability of gate
of the gate trench is alleviated and long-term reliability is oxide film, was found to be 15 to 20 C/cm2, equivalent to
secured, making possible mass production. that of Si MOSFETs (Figure 30).

Third-generation SiC MOSFETs that adopt this double-

trench structure have on-resistances reduced by about
50%, and input capacitance reduced by about 35%,
compared with second-generation planar-type (DMOS
structure) SiC MOSFETs. Furthermore, the fourth
generation has 40% lower on-resistance and 50% lower
switching losses than the third generation.

Figure 30. SiC MOSFET: CCS TDDB test results

Moreover, in HTGB (High Temperature Gate Bias) tests

conducted (at +22 V, 150℃) for the purpose of verifying
the reliability of gate oxide films in relation to crystal
defects, ROHM has confirmed 1000 operating hours
without any failures and characteristic fluctuations.

Figure 29. SiC MOSFET: single-trench

and double-trench structures

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4.7.2 Threshold Stability (Gate Positive Bias)

Because electron traps are not absent at the interface of
a gate oxide film and SiC body, if a positive DC bias is
applied to the gate over a long period of time, the
threshold value rises due to the capture of electrons by
traps.
In HTGB tests, it has been confirmed that the threshold
value shift is extremely small, 0.2 to 0.3 V, after 1000
operating hours at Vgs=+22 V and 150℃. Nearly all traps
are filled during the several dozen hours of the initial
stress application period, and so thereafter the device is
stable, with almost no fluctuation (Figure 31).

Figure 31. SiC MOSFET: HTGB test results

(gate positive bias)
Figure 32. SiC MOSFET: HTGB test results
4.7.3 Threshold Stability (Gate Negative Bias) (gate negative bias)
When on the other hand a negative DC bias is applied to 4.7.4 Body Diode Conduction Degradation
a gate for a long period of time, holes rather than
SiC MOSFETs are thought to have a fault mode called
electrons are trapped, and the threshold value falls. In
body diode conduction degradation. This is a mode in
HTGB test results, the amount of shift in the threshold
which, when a forward current continues to flow in the
value under a negative bias is larger than that for a
body diode of a MOSFET, faults known as stacking faults
positive bias, and for Vgs of -10 V or greater, the threshold
are expanded due to the recombination energy of
value falls by 0.5 V or more (Figure 32).
electron-hole pairs, affecting the current path and
In second-generation MOSFETs (the SCT2xxx series and resulting in increases in the on-resistance and the body
SCH2xxx series), the guaranteed voltage for a negative diode Vf.
gate bias is stipulated as -6 V. For a negative bias larger
Stacking faults amplify heat generation, and in some
than -6 V, there is the possibility that the threshold value
cases can cause rated voltage degradation. Hence when
will fall further, and so care must be taken. In the case of
used in applications in which commutating through the
an AC (positive-negative) bias, charging and discharging
body diode occurs (inverters, DC/DC converters, and the
of traps is repeated, and so it is thought that the shift
like), there is the possibility of serious problems. (Note:
effect is small.
Such problems do not occur with SBDs and the first-
quadrant operation of MOSFETs)

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By developing a proprietary process that prevents breakdown tends to be lower than for Si devices. In the
expansion of stacking faults, ROHM succeeded in case of a 1200 V class MOSFET in a TO247 package, the
securing reliability with respect to body diode conduction. short-circuit withstand time at Vdd=700 V and Vgs=18 V
Figure 33 shows the results of conduction tests for 1000 is roughly 8 to 10 μs. As Vgs falls, the saturation current
hours of an 8 A DC current through the body diode of a becomes smaller, so that the withstand time is longer. And,
second-generation 1200 V, 80 Ω SiC MOSFET product. when Vdd is lower, there is less heat generated, so that
It was verified that there is no fluctuation in any of the the withstand time is longer.
characteristics, including the on-resistance and the
Because the time required to turn off a SiC MOSFET is
leakage current.
extremely short, when the Vgs shutoff speed is fast, a
steep dI/dt can result in a large surge voltage. A soft
turnoff function to gradually lower the gate voltage or
some other method should be used to achieve shutoff
while avoiding overvoltage conditions.
4.7.6 dV/dt Breakdown
In a Si MOSFET, there is a mode in which a high dV/dt
causes a transient current to flow through the capacitance
Cds and turn on the parasitic bipolar transistor, leading to
device breakdown. Because ROHM SiC MOSFETs have
a low current amplification factor (hFE) of the parasitic
bipolar transistor, current amplification is thought not to
occur, and investigations up till now have found no
evidence of this breakdown mode even in operation up to
about 50 kV/μs. The recovery current of a SiC MOSFET
is extremely small, and dI/dt during recovery is low, so
that the dV/dt of the body diode during recovery does not
increase too much either, and therefore it is thought that
this fault mode does not readily occur.
4.7.7 Cosmic Ray Neutron-induced Single-event
Effects
In high-altitude applications, there are cases in which
single-event effects of semiconductor devices, due to
neutrons, heavy ions and other particles that are caused
by cosmic rays that only rarely reach the earth, can cause
problems. As a result of white neutron irradiation tests
(energy: 1 to 400 MeV, conducted at the Research Center
for Nuclear Physics, Osaka University (RCNP)) on SiC
MOSFETs (n=15), no failures were found to occur due to
single-event effects at Vds=1200 V (100% of the rated
breakdown voltage) under neutron irradiation of 1.45×109
neutrons/cm2/s. The failure rate at sea level is 0.92 FIT,
and even at an altitude of 4000 m is 23.3 FIT, which is 3
to 4 orders of magnitude lower than that of equivalent Si
Figure 33. SiC MOSFET: body diode conduction
IGBTs and Si MOSFETs. With a high effective rated
test results
voltage and an ample margin, the risk of failure due to
4.7.5 Short-circuit Rating neutrons originating in cosmic rays can be reduced in
Because of the small chip area and high current density uses at high altitudes and in numerous quantities.
of a SiC MOSFET compared with a S -MOSFET, the
ability to withstand short-circuits that can cause thermal

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4.7.8 Electrostatic Discharge Rating 5.1 Switching Losses in Full-SiC Power Modules
A feature of SiC MOSFETs is the ability to reduce chip Full-SiC power modules have two important advantages
sizes relative to Si MOSFETs, but on the other hand, their over IGBT modules: 1) the ability to dramatically reduce
ability to withstand electrostatic discharge (ESD) failure is switching losses, and 2) overall loss reduction that
limited. Hence adequate electrostatic countermeasures becomes more significant as the switching frequency
must be taken when handling these devices. rises.
■Examples of ESD protection measures Figure 35 compares a 1200 V/300 A full-SiC power
 Eliminate static electricity from human body, devices, module BSM300D12P2E001 with a functionally
and the work environment using ionizers equivalent IGBT module. In comparison based on data
(recommended) sheet specifications; the switch-on loss Eon, switch-off
loss Eoff, and recovery loss Err are all much smaller, and
 Eliminate static electricity from human body and work
Err is negligible because Irr flows very little. As a result,
environment using wristbands and grounding (This
the overall switching loss is reduced by 77%. This is the
measure is ineffective against static charge on devices,
first of the above-described advantages.
so this measure alone is insufficient)
4.7.9 General Reliability Test Conditions
ROHM SiC MOSFETs are based on reliability tests in
accordance with JEITA ED-4701, which is widely adopted
in Japan as a test method for semiconductor evaluation.
Please contact us if you need reliability test results.
5. What is Full-SiC Power Module?
A full-SiC power module is a module that consists entirely
of SiC power devices. ROHM has begun the world's first
mass production of full-SiC power modules, which use
the company's own SiC MOSFETs and SiC SBDs.
Compared with Si IGBT power modules, these products
are capable of faster switching and dramatically lower
losses. The reader will grasp this from the features of SiC
SBDs and SiC MOSFETs in the previous chapters. The
SiC power modules currently being manufactured by Figure 35. Loss comparison between
ROHM are half-bridge type and step-up chopper type full SiC power module and IGBT module
products.

Figure 34. Full SiC power module image and internal circuit examples (2 types)

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Figure 36 shows totals for the switching loss and As one would expect, this small switching loss is due to
conduction loss at switching frequencies of 5 kHz and 30 the characteristics of the SiC elements that constitute the
kHz in loss simulations for the case of a PWM inverter. full-SiC module. Full-SiC power modules are capable of
Compared with an IGBT module, total losses are reduced dramatic reductions in switching losses compared with
by roughly 22% at 5 kHz. The orange areas represent equivalent IGBT modules, and the higher the switching
switching losses; nearly all of the reduction in losses is frequency, the greater is the difference in losses relative
due to reduced switching losses. At 30 kHz, the switching to IGBT modules. This means that full-SiC power
loss for the IGBT is greatly increased; this is a well-known modules are capable of high-speed switching while
issue with high-speed switching in IGBTs. The full-SiC sharply reducing losses, in contrast with IGBT modules,
power module also exhibits an increase in switching loss, which are ill-suited to high-speed switching operation.
but the proportion is smaller than the relative increase for
<Summary>
the IGBT module. As a result, we see that at 30 kHz the
 Full-SiC power modules are capable of dramatic cuts in
total loss can be reduced by about 60%. This is the
switching losses compared with IGBT modules.
second of the above-mentioned advantages.
 The difference is particularly stark at higher switching
frequencies.
5.2 Tips for Practical Use: Gate Driving
From here, we will explain the key points to take full
advantage of the excellent performance of full-SiC power
modules.
5.2.1 Issues Relating to Gate Driving: False Gate
Turn-On
"False gate turn-on" is a phenomenon in a configuration
using a high-side SiC MOSFET and a low-side SiC
MOSFET in which, at the time of SiC MOSFET transition
(switching), ringing occurs in the gate voltage of the high-
side SiC MOSFET, or the gate voltage of the low-side SiC
MOSFET is raised, causing the SiC MOSFET to operate
erroneously. The essence of this phenomenon can be
Figure 36. Loss simulation of full SiC power module
understood easily by referring to Figure 37.
and IGBT module

Figure 37. Issues relating to gate driving: False gate turn-on

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The green trace (waveform) is the gate voltage of the

high-side SiC MOSFET (VgsH), the red represents the
low-side gate voltage (VgsL), and the blue is Vds. Ringing
and oscillation are observed in all of these, making them
waveforms that do not inspire optimism. If for example
false turn-on occurs when the low side must be turned off,
there is the possibility of problems such as a through-
current flowing between the high side and the low side.
This phenomenon arises due to the extremely fast
switching that is one feature of SiC MOSFETs. The rising
of the low-side gate voltage occurs due to the ringing in
Vd that occurs during the transition to high-side turn-on,
and the parasitic capacitance of the gate of the low-side
SiC MOSFET.
5.2.2 Switching Speeds: Comparison with IGBTs
Figures 38-1 and 38-2 compare dV/dt, that is, switching
speed when the switch is on and off for a full-SiC power
module and an IGBT module. The dV/dt when the switch Figure 38-1. Switching speed of full SiC power module
is on in the SiC module is about the same as for the IGBT at on-state
module, depending on the external gate resistance Rg.
5.2.3 Parasitic Capacitance: Comparison with IGBTs
When the switch is off, since the SiC module does not
have a tail current unlike in the case of IGBTs, the dV/dt Parasitic capacitances in MOSFETs (or IGBTs) include
depends on the external gate resistance Rg, similarly to Cgd (Cgc) between the gate and drain (or collector), Cgs
when the switch is turned on. (Cge) between the gate and source (or emitter), and Cds
(Cce) between the drain (or collector) and the source
(emitter). Of these, Cgd and Cgs are related to the rising
of the low-side gate voltage.
The graph on the left in Figure 39 shows the relationships
of Cgd (Cgc) with Cgs (Cge) and Vds (Vce). Curves not
labeled as applying to SiC modules are for IGBTs. As the
curves indicate, the parasitic capacitances are roughly
the same, and the characteristics are also similar. The
graph on the right shows the ratio of Cgd (Cgc) to Cgs
(Cge), which is called the parasitic gate capacitance ratio;
it is a parameter that affects the rising of the low-side gate
voltage. As can be inferred from the actual capacitance
values in the graph on the left, the parasitic capacitances
are about the same.

Figure 38-1. Switching speed of full SiC power module

at on-state

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Figure 39. Parasitic capacitance: Comparison with IGBTs

5.2.4 Mechanism of Gate Voltage Rising

As mentioned above, rising of the low-side SiC MOSFET
gate voltage is due to the fast dV/dt when the high-side
SiC MOSFET is switched on; an increase ΔVgs in the
gate voltage occurs due to the parasitic gate capacitance
and gate impedance of the low-side SiC MOSFET.
The switching-on speed of a SiC MOSFET depends on
the external gate resistance Rg, as indicated in Figure 38;
if Rg is low, dV/dt becomes high.
The gate parasitic capacitance is essentially something
that is present and cannot be adjusted, and so, given that
the gate parasitic capacitance is present as a fixed
quantity, and taking the low-side gate impedance to be a
cause of ΔVgs, we consider the external gate resistance
Rg, which can be adjusted.
Figure 40 indicates the relationship of the low-side gate
voltage rise ΔVgs to the high-side external gate
resistance Rg_H and the low-side external gate
resistance Rg_L. As can be seen from the graph, the
smaller the high-side Rg_H, that is, the higher the value of
dV/dt, and the larger the low-side external gate resistance,
the higher the resulting ΔVgs.

Figure 40. Relationship between low-side ⊿Vgs

and gate resistors Rg_H and Rg_L

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<Summary> In ③, a mirror clamp MOSFET is added between gate

 "False gate turn-on" is one issue requiring consideration and source. When the SiC MOSFET is turned off, this
in relation to gate driving in a full-SiC power module. MOSFET is turned on to force Vgs to essentially 0 V,
eliminating rises in the gate potential.
 False gate turn-on arises due to the fast dV/dt during
high-side switch-on and the low-side parasitic gate
capacitance and gate impedance.
5.2.5 Methods for Suppressing False Gate Turn-On
As a matter for study relating to gate driving of full-SiC
modules, we explained "False Gate Turn-On" in the
previous section. Three methods are described for
dealing with this issue (see Figure 41).
In the method of ① , by lowering Vgs to a negative
voltage rather than to 0 V, a margin is provided such that
even if Vgs rises somewhat, the threshold value is not
reached. In this method, a negative gate driving voltage
is needed, and so as the gate driver power supplies,
asymmetric power supplies such as +18 V/-3 V are used.
In this case, the negative voltage must be set so as not to
exceed the maximum rating for Vgs.
In ②, an external capacitor is added between the gate
and the source to lower the impedance, suppressing rises
in the gate potential. As one matter for study, CGS is also
a loss factor, and so the capacitance must be set
appropriately.
Figure 41. Methods for suppressing false gate turn-on

Figure 42. Gate drive evaluation circuit with false gate turns on suppression circuit

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5.2.6 Confirmation Using an Evaluation Circuit

The following are the results of the effect in suppressing
rises in the gate voltage confirmed using an evaluation
circuit. Figure 42 is an example of a gate driving circuit;
the gate driving L is negative-voltage driving as the false
gate turn-on. suppressing method ① in Figure 41. The
+18 V at CN1 and CN4 and the -3 V at CN3 and CN6 are
the driving power supplies. Based on this circuit, CGS of
the suppressing method ② and a mirror clamp MOSFET
of the suppressing method ③ are added to enable
adjustments, including of the gate resistance. This gate
driver is connected to the gate and source of the full-SiC
power module, then rises in the gate voltage were
Figure 44. Method ②: External CGS = 2.2 nF
checked in conditions with adding CGS of the suppressing
data for comparison
method ② and a mirror clamp MOSFET of the
suppressing method ③.
5.2.6.1 Effect of Suppressing Method ②
First, the effect of adding CGS in the method ② is shown.
Figure 43 shows the data without the external CGS added
for comparison. When the low-side gate resistance Rg is
reduced, the rise in Vgs increases, as explained in the
previous section.

Figure 45. Method ②: External CGS = 5.6 nF

data for comparison

As a result, adding CGS does exhibit an effect in reducing

the rise in Vgs, but we see that simply increasing the
capacitance does not mean that the effect is increased.
As explained above, CGS is also a cause of losses, and
so the value of the capacitor must be set moderate values.
5.2.6.2 Effect of Suppressing Method ③
Next, the effect of ③, the mirror clamp MOSFET, is
explained. The dots on the left side graph in Figure 46 are
Figure 43. Method ②: Data without the external CGS added the data presented above when a capacitor is added, and
Next, Figure 44 shows the data when 2.2 nF is added as mirror clamp data is indicated by circles. It is seen that
an external CGS. As indicated by the 2.2 nF curve, rising there is a very great effect. The graph on the right shows
of the gate voltage is suppressed. the effect versus any condition with respect to surge
voltage, and that the effect of both ② the addition of CGS
Finally, data for a case in which 5.6 nF is added as CGS is and ③ the Miller clamp is about the same.
shown in Figure 45. No particular improvement in the
suppression effect can be seen even when the
capacitance is increased.

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Finally, we present actual waveforms in Figure 47. The

green and blue waveforms are from before measures
were implemented, and red and orange waveforms are
for after implementation. Conditions are as indicated in
the table; as for measures are implemented, a mirror
clamp MOSFET has been added, Rg is reduced from
3.9Ω to 2.2 Ω, and a 5.6 nF capacitor CGS is added.
After implementing the measures, ringing was reduced in
both Id and Vd. Where Vgs is concerned, a rise in Vgs(L)
to a peak of 5.9 V was observed, but after the measures
were implemented, this was held to 1.1 V. In the case of
Vgs(H) also, ringing with a peak of 7.7 V was reduced to
3.5 V, and it should be clear that convergence was faster.
Figure 46. Method ③: Effect of mirror clamp MOSFET
In this way, by optimizing gate driving of a full-SiC power
module, clean operation with still lower losses is made
possible.
<Summary>
 Methods for suppressing false gate turn-on include ①
setting Vgs to a negative voltage when turned off, ②
adding an external capacitor CGS, and ③ adding a mirror
clamp MOSFET.
 By optimizing the gate driving of a full-SiC power
module, clean operation with still lower losses is
possible.
5.3 Tips for Practical Use: Snubber Capacitors
Snubber capacitors are an important component for
utilizing full SiC modules. Snubber capacitors must be
added to circuits that rapidly switch large currents.
5.3.1 What is Snubber Capacitor?
A snubber capacitor is a capacitor that is connected to a
large-current switching node for the purpose of reducing
the parasitic inductance of electric wiring. Parasitic
inductance causes large surges at switch-off (when the
current is blocked), and should such surges exceed
component ratings, there are concerns of consequent
failure in the worst case.
In order to effectively reduce wiring inductance,
capacitors must be connected near the lines indicated by
the red ovals in Figure 48 circuit diagram.

Figure 47. Actual waveforms of evaluation circuits

and results

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of the connection location, but also the differences in

characteristics depending on the capacitor structure and
materials. Figure 49 shows the capacitors used in this
evaluation. The manufacturers, part numbers, etc. shown
here are current as of the time of the evaluation. Please
confirm the current status with ROHM or each
manufacturer.
5.5.3 Examples of Snubber Capacitor Installation
Figure 48. Mounting position of snubber capacitor Figure 50 shows an example of snubber capacitor
5.3.2 Examples of Snubber Capacitors installation. In these examples, small-value capacitors
are installed close to SiC MOSFET terminals, adhering to
For snubber capacitors, it is necessary to evaluate and the basic principle of placing large capacitances between
use not only electrical ratings that meet the requirements lines.

Figure 49. Examples of snubber capacitors

Figure 50. Examples of snubber capacitor

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5.3.4 Example of Snubber Capacitor Effect in pathways of large loops, with large inductance.
In the three examples given in the previous section, the As a result, in the case of ceramic capacitors, we can say
surge waveforms occurring between drain and source that the surge suppression effect is greater for a smaller
when the SiC MOSFET is turned off and current is cut off number of parallel groups and for larger total capacitance.
are shown in Figure 51. When a capacitor is added near
Finally, the effect of large-value capacitors is checked. In
the terminals of the SiC MOSFET, there is a surge
Figure 53, Surges are compared when large-capacitance
suppression effect, and the effect differs depending on
capacitors are and are not present, in a state in which five
the type of capacitor.
groups of two series-connected ceramic capacitors are
connected in parallel.

Figure 51. Examples of snubber capacitor effect Figure 53. Snubber capacitor: Effect of
large-capacitance capacitors
Next, waveforms comparing the suppression effect for the
ceramic capacitor example (Figure 51 in red) in three As indicated by the red waveform for the case in which a
under different conditions are shown in Figure 52. large-capacitance capacitor is present, we see that a
large-value capacitor is effective in suppressing long-
period ringing.
In these examples, by connecting a large-value capacitor
and ceramic capacitors close to the terminals of the SiC
MOSFET as snubbers, a considerable suppression effect
is obtained. However, the position of capacitor installation,
the combination of parallel and series connections of
capacitors, and slight differences affect the surge
waveform, and so it is necessary to verify the suppression
effect in actual equipment.
<Summary>
Figure 52. Snubber capacitor: Capacitance
To take advantage of high-speed switching performance,
and effect of ceramic capacitors
snubber capacitors are needed to minimize parasitic
The ringing t1 at a frequency of about 23 MHz inductance in the electrical wiring.
immediately after turn-off attenuates more rapidly for Connect a capacitor near the terminal for power to reduce
fewer capacitor groups in parallel (blue A). This is thought wiring inductance.
to be because the capacitor ESR is inversely proportional
to the number of parallel groups, that is, the smaller the The effect varies depending on the type of capacitor,
number of parallel capacitor groups, the greater the ESR. mounting position, and configuration, so evaluation with
actual equipment is necessary.
When the capacitance of a ceramic capacitor is small,
ringing t2 at a frequency of about 2 MHz occurs (green B,
blue A). This is attributed to charge that has accumulated

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5.4 Tips for Practical Use: The Effects of Specialized 5.4.2 Specialized Gate Driver Board and Ceramic
Gate Drivers and Snubber Modules Snubber Capacitor Module
In addition to the snubber capacitors that were discussed Figure 55 shows a specialized gate driver and snubber
in the previous section we explain improvements to capacitor for addition to the basic configuration, and
switching characteristics when a specialized gate driver Figure 56 shows an example installation. They are made
is used. available for use in evaluating full-SiC modules.
5.4.1 Driving Specifications and Basic Configuration
of Full-SiC Modules
The characteristics resulting when using snubber
capacitors and specialized gate drivers are compared for
conditions in Figure 54 and circuit configuration. The
circuit configuration is provided with the electrolytic
capacitors and film capacitors described in the section.
When a specialized gate driver is not used, as a false gate
turn-on countermeasure, a capacitance CGS of microfarad
order is added, and -5 V is applied to VGS as a negative
bias (for the case of a full-SiC module equipped with
second-generation SiC MOSFETs).
Figure 54. Driving specifications and basic configuration
of full-SiC modules

Figure 55. Specialized gate driver and snubber capacitor to be added to the basic configuration

Figure 56. Example of specialized gate driver and snubber capacitors installation

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5.4.3 Effect of Specialized Gate Driver and Snubber mJ to 5.3 mJ, while Eoff is reduced from 5.3 mJ to 3.8 mJ.
Module This is because with decreasing inductance, which exerts
a large influence, Eon increases while Eoff decreases. On
To begin with, waveforms are compared when the full-SiC
comparing the overall loss (Eon+Eoff), we see that loss is
power module turned on, both before and after installing
reduced by 0.4 mJ.
the specialized gate driver and the snubber capacitors
(Figure 57). In conclusion, we can say that in order to fully utilize the
performance of a full-SiC module, it is a good idea to add
a snubber and use a gate driver with a specialized design.
Up till now, taking as our theme important points in
utilizing full-SiC modules, we have considered gate
drivers and explained the effect of snubbers, and, in this
article, the use of specialized gate drivers. In order to
perform extremely high-speed switching of high voltages
and large currents, the use of such complementary
components, as well as adjustments based on
evaluations, are important points. Particularly during
initial evaluations, using an evaluation board and other
tools can greatly smooth development.
<Summary>
Figure 57. Comparison turn-on waveforms both before  Surges and ringing can be dramatically suppressed by
and after installing the specialized gate driver using a specialized gate driver and a snubber module.
and the snubber capacitors
 Where losses are concerned, there is an increase in
In order from the top, the ID, VD, and VG waveforms are Eon and a decrease in Eoff. When comparing overall
shown in Figure 57, with red and orange representing the losses (Eon+Eoff), losses are reduced.
waveforms for cases in which the specialized gate driver
5.5 Support Tools: Full-SiC Module Loss Simulator
and the snubber module are installed, and the blue and
green representing waveforms when they are not A Loss simulator that can be used in the study and
installed. It is clearly seen that surges and ringing are evaluation of full-SiC modules is offered at no cost.
suppressed. Next, the turn-off waveforms are shown in Simply by selecting a full-SiC module and setting the
Figure 58. input conditions, the losses and temperatures of the
transistors and diodes within the module can be
simulated.
Figure 59 is an example of an input screen. G is the power
factor, H is the modulation ratio, K is the heat sink
temperature, and other quantities are as indicated in the
screen.

Figure 58. Comparison turn-off waveforms both before

and after installing the specialized gate driver
and the snubber capacitors

Surges and ringing are likewise greatly reduced.

Where losses are concerned, Eon is increased from 4.3

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■ 2 ch gate driver reference board with incorporated

flyback power supply
https://www.rohm.com/power-device-support#gate-
driver
<Summary>
 A full-SiC module loss simulator and other support tools
are available.
 The support tools are useful for selection and initial
studies of full-SiC modules.
Conclusion
To understand SiC power devices, basic SiC properties
Figure 59. Loss simulator: Example of input screen
and characteristics, SiC SBDs, SiC MOSFETs, and full
Next, we show an output screen in Figure 60. In A, the SiC power modules were explained, including their
loss for each transistor in the module, P-Tr, the SW loss characteristics and usage in comparison with existing Si
and DC loss making up each P-Tr loss, and the SW(on) devices. In response to energy issues, which are a global
and SW(off) losses that make up each SW loss are shown. challenge, SiC and other new semiconductor materials
At the same time, the difference between the junction have been developed and are rapidly evolving toward
temperature and the case temperature, ΔTj-c(Ave), and practical use. These devices contribute greatly to energy
the junction temperature Tj(Ave) are also calculated. B conservation due to their superior characteristics and
similarly presents simulation results for diodes. C performance that cannot be obtained with Si
indicates the overall loss for the module. These results semiconductors. Note that some of the contents of this
can be stored in CSV format. handbook are based on the previous generation. While
the fundamentals remain the same, the performance and
specifications of the new generation products are superior,
so we encourage you to obtain the latest information from
our website.
See also: https://www.rohm.com/products/sic-power-
devices

Figure 60. Loss simulator: Example of output screen

The full-SiC module loss simulator can be downloaded

from ROHM's official website.
https://fscdn.rohm.com/en/products/library/design/disc
rete/sic/SiC-Loss_Simulator.zip
Other related support tools are available as well. For
details, please follow these links.
■Gate driver board for full-SiC module evaluation
https://www.rohm.com/power-device-support#full-sic-
module-drive

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Revision History

Date Version Details

2023.7.12 001 Initial version

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Basics of SiC Power Devices

Notes
1. The information contained herein is subject to change without notice.
2. Before you use our Products, please contact our sales representative and verify the latest specifications.
3. Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down
and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure,
please take safety measures such as complying with the derating characteristics, implementing redundant and fire
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4. Examples of application circuits, circuit constants and any other information contained herein are provided only to
illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account
when designing circuits for mass production.
5. The technical information specified herein is intended only to show the typical functions of and examples of
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intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility
whatsoever for any dispute arising out of the use of such technical information.
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10. ROHM has used reasonable care to ensure the accuracy of the information contained in this document. However,
ROHM does not warrant that such information is error-free, and ROHM shall have no responsibility for any damages
arising from any inaccuracy or misprint of such information.
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