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L-4/T-l/EEE Date: 01110/2022

BANGLADESH UNIVERSITY OF ENGINEERING AND TECHNOLOGY, DHAKA
L-4/T -I B. Sc.Engineering Examinations 2020-2021

Sub: EEE 455 (Compound Semiconductor Devices)

Full Marks: 210 Time: 3 Hours
The figures in the margin indicate full marks.
All the symbols have their usual meanings. Make necessary assumptions.
USE SEPARATE SCRIPTS FOR EACH SECTION
SECTION-A
There are FOUR questions in this section. Answer any THREE.
Use Figure I, if necessary ..

1. (a) Explain the significance of critical thickness in thin film growth technology. Calculate
critical thickness of Ge on Si substrate and draw variation of critical layer thickness of
GexSil•x composition for epitaxy GexSiJ•x grown on Si substrate. Show energetically
favorable growth phenomenon for below and above critical thickness. Justify your

answer. (20)
(b) Draw schematic hole band dispersion for 1 nm thick GaAs film grown on Si substrate

and InP substrate separately. Explain dispersion diagrams with justification; (15)

2. (a) With necessary diagrams, differentiate between the staggered, straddling and broken

gap heterojunctions. (20)

Sketch the energy-band diagrams of an abrupt Alo.3sGao.6sAs-GaAs heterojunction for N-
AIGaAs, p-GaAs. Assume Eg = 1.9 eV for Alo.;sGao.6sAs and assume !'J.Ec = 2/3 Mg.
(b) Draw energy-band diagram for modulation-doped superlattice structure of GaAs and
A1o.3sGao.6sAs. With necessary diagrams, discuss the mobility as a function of

temperature for bulk GaAs and modulation-doped superlattice structure. (15)

3. (a) Sketch the cross section of an n-channel GaAs MESFET and draw corresponding
idealized energy-band diagram of the substrate-channel-metal in the n-channel MESFET.
Explain how source resistance affects transconductance and transistor gain of

JEFTIMESFET. (20)
(b) An n-channel GaAs MESFET at 1'=300 K has the following parameters:
tPsn=0.90 V, Nd =5 xlOI6 cm-3, Iln=7500 cm2N-s, 0=0.30 11m, W=5 11marid L =1.2 11m.
Calculate the cutoff frequency using (a) the constant mobility model and (b) the

saturation velocity model. If required, make necessary assumptions. (15)

4. (a) Deign a resonant tunneling diode (RTD) and draw a schematic energy-band diagram
of structure in thermal equilibrium and when bias is applied. Show and discuss I-V

characteristics at different biasing conditions. (20)

Contd P/2
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EEE 455
Contd ... Q. No.4

(b) A syminetric GaAs/AIAs resonant-tunneling diode (RTD) has a barrier widt,h of 10 A

and a well width of 20 A, Draw schematic I-V characteristics of RTD. Redraw the
schematic I-V characteristics of the RTD if the emitter layer thickness is increased by

5 A. Explain with proper justification. (15)

,
SECTION-B
There are FOUR questions in this section. Answer any THREE.

5. (a) Estimate the common-emitter current gain of a silicon npn bipolar transistor at
T = 300 K given the following parameters: DB = 25 cm2/s, DE = 10 cm2/s, W = 0.7 /lm,

XE = 0,7 /lm, NB = 1016/cm3,NE= 10IS/cm3, (10)

(b) A silicon pnp bipolar transistor at T = 300 K has uniform dopings of NE = lOiS /cm3,
NB = 1016/cm3, Nc = 1015/cm3, The metallurgical base width is 1.2 /lm, Let DB =

10 cm2/s and VEB= 0,625 V, Determine. the hole diffusion current density in the base for

VBC= 5 V, VBc = 10 V, and VBc = 15 V, Also estimate the Early voltage, (25)

6, (a) A silicon pnp bipolar transistor at T = 300 K is to be designed so that the Emitter
injection efficiency is 0,996. Assume that XE = XB, LE = LB, DE = DB, and NE = 1019/cm3,
Determine the maximum base doping taking'into account bandgap narrowing, If bandgap

narrowing were neglected, what would be the maximum base doping required? (20)

(b) Explain the effects occur in it bipolar transistor at high injection levels, (15)

7, (a) A uniformly doped silicon epitaxial npn bipolar transistor is fabricated with a base
doping of NB = 3 x 1016/cm3and a heavily doped collector region with Nc =5 x I017/cm3,

The neutral base width is 0.70 /lm when VB = VBC= 0, Determine VBC at which punch-

through occurs, (20)

(b) What is SiGe-base transistor? What are effects of SiGe-base transistor compared to a

Si-base transistor? . (15)

8, (a) Consider an N-Alo.3 Gao.7As-intrinsic GaAs abrupt heterojunction, Assume that the
AlGaAs is doped to IOI8;cm3 and has a thickness of 500 A, Assume an undoped spacer

layer of 20 A, IpB = 0,85 V, and liEJq = 0,22eV, The relative dielectric constant of

Alo.3Gao.7Asis 12,2, Determine the 2-D electron concentration, (15)

(b) Consider a silicon npri transistor at T = 300 K. Calculate the emitter-to-collector
transit time and the cutoff frequency assuming the following parameters: IE = IrnA,

Cjc= I pF, XB= 0.5/lm, Xdc= 2.4 /lm, Dn = 25 cm2/s, rc = 20 '0, C~=O,I pF, C, = 0, I pF, (20)
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L-4/T-1/EEE Date: 20/09/2021
BANGLADESH UNIVERSITY OF ENGINEERING AND TECHNOLOGY, DHAKA
L-4/T-I B.Sc. Engineering Examination 2020-21

Sub: EEE 455 (Compound Semiconductor Devices)

Full Marks: 210 Time 2:30 Hours
The Figures in the margin indicate full marks
USE SEPARATE SCRIPTS FOR EACH SECTION
There are 4 page(s) in this question paper.

SECTION – A
There are FOUR questions in this section. Answer any THREE
All the symbols have their usual meanings
Assume reasonable values for missing data.
(Figure 1 and Table 1 can be used for SECTION-A, if necessary)

1. List two ternary/quaternary semiconductor alloys that can be lattice matched to (35)
an InxGa1-xP substrate. Estimate composition and draw approximate E-k diagram.
Suggest band gap of ternary/quaternary semiconductor alloys with proper
explanation.
where,
x=1-y×10-2 [Given, y=last two digits of your ID No.] for ID<1606099

x=1-y×10-3 [Given, y=last three digits of your ID No.] for ID>1606099

2. Consider a lattice matched InGaP/InxGa1-xAs (or InAsP/InxGa1-xAs) HBT (35)

designed for high-speed operation has both the emitter and the base are uniformly
doped to A×1015 cm-3 and B×1015 cm-3, respectively. Let, xE=0.75µm, WB=0.5
µm, Dn=Dp. Draw energy band diagram of the device at thermal equilibrium
condition. Estimate CE current gain, β for medium injection level. Also compare
β to that of n+pn- Si BJT.
Discuss merits and demerits of the designed device.
Given,
x=0.35+ y×10-2 [ where, y=last two digits of your ID No.] for ID<1606051
 =2=

x=y×0.005 [y=last three digits of your ID No.] for ID>1606050 (also for ID
1206117 and ID 1506134)
A=last three digits of your ID No. and
B=last two digits of your ID No.

3. A uniformly doped pnp silicon bipolar transistor at T=300 K has a base doping (35)
of NB = M×1015 cm-3, a collector doping of NC = M×1014 cm-3, a metallurgical
base width of xB0 = 0.70 µm, a base minority carrier diffusion coefficient of DB
= 10 cm2/s, and a B–E cross-sectional area of ABE = 104 cm2. The transistor is
biased in the forward-active mode with VEB = 0.625 V. Neglecting the B–E space
charge width and assuming xB>>LB,
(i) determine the change in neutral base width as VBC changes from 1 to 10 V,
and
(ii) find the corresponding change in collector current

Given,
M=y×10-1 [where, y=last three digits of your ID No.]

4 A symmetric GaAs/AlAs resonant-tunneling diode (RTD) has a barrier width of (35)

10+X Å nm and a well width of 15+X Å. Draw schematic I-V characteristics of
RTD. Redraw the schematic I-V characteristics of the RTD if the emitter layer
thickness is increased by X Å. Explain with proper justification.
Given:
X= Last 3 digits of your Student ID No.× 10-1

SECTION – B
There are FOUR questions in this section. Answer any THREE
All the symbols have their usual meanings
Assume reasonable values for missing data.

5. (a) Find the thickness of the undoped spacer layer, such that the two-dimensional
electron gas concentration of an AlGaAs/GaAs heterojunction is 1.25 × 1012 /cm2
at zero gate bias, Assume that the n-AlGaAs is doped to 1 × 1018 cm-3 and has a
thickness of 50 nm, the Schottky barrier height is 0.89 V, and ΔEc/q = 0.23 V.
The permittivity of the AlGaAs is 12.3. (30)
(b) How the cut-off frequency of HEMT can be increased? (5)
 =3=

6. Consider an ideal abrupt heterojunction with a built-in potential of 1.6 V The

impurity concentrations in semiconductor 1 and 2 are 1 × 1016 donors/cm3 and 3
× 1019 acceptors/cm3, and the dielectric constants are 12 and 13, respectively.
Find the electrostatic potential and depletion width in each material for applied
voltage of 0.5 V and -5 V. (35)

7. An n-channel GaAs MESFET has a channel doping Nd = 2 × 1015 cm-3, ΦBn =

0.8 V, a = 0.5 µm, L = 1 µm, µn = 4500 cm2V-s, and W = 50 µm. Find the built-
in voltage, pinch-off potential, threshold voltage, and the saturation current at VG
= 0. Determine whether the MESFET is depletion type or enhancement type. (35)

8. (a) The barrier height of two GaAs n-channel MESFETs are the same and equal
to 0.85 V. The channel doping in device 1 is Nd = 4.7 × 1016 /cm3, and that in
device 2 is Nd = 4.7 × 1017 /cm3. Determine the channel thickness required in
each device such that the threshold voltage is zero for each device. (25)
(b) Explain with a neat diagram how the breakdown occurs in MESFET. (10)
 =4=

Following Figure and Table can be used for SECTION-A, if necessary

Figure 1: Energy gap vs. lattice constant for some common compound semiconductors

Table 1. Compositional Dependence of Energy Gap of Ternary III-V Semiconductors

L-4rr-lIEEE Date: 19/1012019
BANGLADESH UNIVERSITY OF ENGINEERING AND TECHNOLOGY, DHAKA
L-4rr - I B. Sc. Engineering Examinations 2018-2019
Sub: EEE 455 (Compound Semiconductor Devices)
Full Marks: 210 Time: 3 Hours
The figures in the margin indicate full marks.
USE SEPARATE SCRIPTS FOR EACH SECTION
SECTJON-A

There are FOUR questions in this section. Answer any THREE

The symbols have their usual meaning. Make necessary assumptions.

1. (a) Draw E-k diagram of Si and GaAs semiconductors and compare carrier (electron and

hole) mobility in these semiconductors from E-k diagram. Why does some
semiconductors show negative differential mobility? Define optical phonon. (20)
(b) Evaluate critical thickness ofGaAs epitaxial layer on Si and InP substrates. How does
critical thickness play important role in epitaxial layer growth of compound

semiconductors? [Given: as; = 5.43A, aCnAs = 5.65A, alnP = 5.87A] (15)

2. (a) Differentiate between the heavy-hole and light-hole states. With neat diagram, explain
the hole band dispersions of GaAs on Si and InP substrates. What is Vegard's law? (20)
(b) What is conductivity modulation? How does this conduction mechanison contribute
to performance improvement in electronic devices? Explain, with neat diagrams, the
advantages of superlattice structure. (15)

3. (a)d Design an HBT structure for high speed application and explain with necessary
energy band diagrams. Why conduction band sometimes termed as 'a launching pad' for
ballistic electrons in HBT? (20)
(b) Draw detailed energy-band diagram of a metal-semiconductor junction with an
interfacial layer and interface states in thermal equilibrium. Show, how the Fermi level
becomes 'pinned'? (15)

4. (a) Draw the I-V characteristics of a resonant-tunneling diode and explain why the
characteristic are different to that of conventional tunnel diode. (20)
(b) Draw structure of res ora nt-tunneling diode using GaAs/AlGaAs heterostructure. With
neat diagrams, explain transmission coefficient of electron with energy E through a
double barrier via coherent resonant tunneling. (15)

Contd P/2
"

=2=
EEE 455

SECTION-B

There are FOUR questions in this section, Answer any THRFE

(i) All the symbols have their usual meanings,
(ii)Assume reasonable values for missing data

5, (a) Consider n-type Ge doped with Nd = 1016/cmJ and p-type GaAs doped with
Na = 1016/cm3 Let T = 300 K so that ni = 2Ax 1OIJ/cmJ for Ge, Determine DEc, /:!,E", and
Vbf for an n-Ge to P-GaAs hetorojunction, The electron affinities of Ge and GaAs are
4.13 eV and 4.07 eV, respectively, (15)
(b) Explain four basic types ofheterojuncitons showing their ideal energy-band diagrams
in thermal equilibrium, (20)

(20)

7. (a) The Schottky barrier height of a metal-n-GaAs MESFET is 0.9 V. The channel doping
is Nd = 1.5 x 1016/cmJ, the channel thickness is a = 0,5 llm, and T = 300 K, Calculate the
internal pinchoff voltage Vpo and the threashold voltage Vr, Determine whether the
MESFET is depletion type or enhancement type, (15)

(b) Two n-channel GaAs MESFETs have barrier heights of 0,89 V, The channel doping
concentration in device I is Nd = 3 x 1016/cmJ and that in device 2 is Nd = 3 x 1017/cm3
Determine the channel thickness required in each device such that the threshold voltage is
zero for each device. (20)

8. (a) Consider an N-Alo.JGao.7As-intrinsic GaAs abrupt heterojunction. Assume that the

AIGaAs is doped to Nd = 3 x 1018/cmJ and has a thickness of 350A. Let rpBn = 0,89 V, and

assume that /:!'Ec = 0.24 eV. Calculate Voffand ns for Vg = O. (20)

(b) Consider an abrupt N-Alo.JGao.7As-intrinsic GaAs heterojunction. The N-AIGaAs is
doped to Nd = 2 x 1018/cm3 The Schottky barrier height is 0.85 V and the heterojunction

conduction-band edge discontinuity is /:!'Ec = 0.22 eV. Determine the thickness of the

AIGaAs layer so that Voff= -0.3 V, (15)