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Ch2C DC Operating Point and Biasing Techiques

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16 views39 pages

Ch2C DC Operating Point and Biasing Techiques

Uploaded by

chahmedrazacc
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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26/04/2019

CHAPTER 2B
TRANSISTOR BIAS
CIRCUITS
1
OBJECTIVES

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 Discuss the concept of dc biasing of
a transistor for linear operation
 Analyze voltage-divider bias, base
bias, emitter bias and collector-
feedback bias circuits.

2
LECTURE OUTLINE

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1. Objectives
2. Introduction
3. DC operating point
4. Voltage-divider bias
5. Other bias methods
 Base bias
 Emitter bias
 Collector-feedback bias
6. Summary 3
INTRODUCTION

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 biasing is used to establish a fixed level of
current and voltage.
 Transistor must be properly biased with dc voltage
to operate as a linear amplifier.
 If amplifier is not biased with correct dc voltages
on input and output, it can go into saturation or
cutoff when the input signal applied.

4
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DC OPERATING
POINT
DC OPERATING POINT

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 The goal of amplification in most cases is to
increase the amplitude of an ac signal without
altering it.
 Improper biasing can cause distortion in the
output signal.

6
DC OPERATING POINT

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 The purpose of biasing a circuit is to establish a
proper stable dc operating point (Q-point). The
goal of Q-point such that it does not go into
saturation or cutoff when an ac signal is applied.

7
 Q-point of a circuit: dc operating point of amplifier
specified by VCE and IC. These values are called the
coordinates of Q-point.

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 Refer to figure a, given IB = 200μA and βDC=100. IC=βDCIB
so IC=20mA and
VCE  VCC  I C RC  10V  ( 20mA)( 220)  10  4.4  5.6V

 Figure b, VBB is increased to produce IB of 300μA and IC


of 30mA.
VCE  VCC  I C RC  10V  ( 30mA)( 220)  10  6.6  3.4V

 Figure c, VBB is increased to produce IB of 400μA and


IC=40mA. So, VCE is:

VCE  VCC  I C RC  10V  (40mA)( 220)  10  8.8  1.2V


8
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9
DC OPERATING POINT-DC LOAD
LINE
Recall that the collector characteristic curves graphically

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show the relationship of IC and VCE for different IB.
 When IB and IC increases and VCE decreases or vice-versa.
Each separate Q-point is connected through dc load line. At any
point along line, values of IB, IC and VCE can be picked off the
graph.
 Dc load line intersect VCE axis at 10V, where VCE=VCC. This is
cutoff point because IB and IC zero. Dc load line also intersect
IC axis at 45.5mA ideally. This is saturation point because IC
is max and VCE=0.

10
EXAMPLE 1
 Determine Q-point in figure below. Assume

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βDC=200.

11
EXAMPLE 2
 Figure below shows the collector characteristic

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curves and dc load line. Determine the following
a) Collector saturation current

b) VCE at cutoff

c) Q-point values of IB, IC and VCE

12
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VOLTAGE-DIVIDER
BIAS
VOLTAGE-DIVIDER BIAS

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 Voltage-divider bias is the most
widely used type of bias circuit. Only
one power supply is needed and
voltage-divider bias is more
stable(independent) than other bias
types.
 dc bias voltage at base of transistor
is developed by a resistive voltage-
divider consists of R1 and R2.
 Vcc is dc collector supply voltage. 2
current path between point A and
ground: one through R2 and the
other through BE junction and RE.

14
VOLTAGE-DIVIDER BIAS

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 If IB is much smaller than I2, bias circuit is viewed as voltage
divider of R1 and R2 as shown in Figure a.
 If IB is not small enough to be neglected, dc input resistance
RIN(base) must be considered. RIN(base) is in parallel with R2
as shown in figure b.

15
INPUT RESISTANCE AT TRANSISTOR
BASE

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 VIN is between base and ground
and IIN is the current into base.
 By Ohm’s Law,
RIN(base) = VIN / IIN
 Apply KVL, VIN=VBE+IERE
 Assume VBE<<IERE, so VIN≈IERE
 Since IE≈IC=βDCIB,
VIN≈ βDCIBRE
 IIN=IB, so
RIN(base)= βDCIBRE / IB
RIN(base) = βDCRE

16
ANALYSIS OF VOLTAGE-DIVIDER
BIAS CIRCUIT

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17
ANALYSIS OF VOLTAGE-DIVIDER
BIAS CIRCUIT

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 Total resistance from base to ground is:

R2 RIN ( base)
R2  DC RE
 A voltage divider is formed by R1 and resistance from base to
ground in parallel with R2.
 R2  DC R E 
VB   VCC
 R1  R  DC RE 
 2 

 If βDCRE >>R2, (at least ten times greater), then the formula
simplifies to
 R2 
VB   VCC 18

 R1  R 2 
ANALYSIS OF VOLTAGE-DIVIDER
BIAS CIRCUIT
Now, determine emitter voltage VE.

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VE=VB – VBE
 Using Ohm’s Law, find emitter current IE.

IE = VE / RE
 All the other circuit values

I C ≈ IE
VC = VCC – ICRC
 To find VCE, apply KVL:

VCC – ICRC – IERE – VCE =0


 Since IC ≈ IE,

VCE ≈ VCC – IC (RC + RE) 19


EXAMPLE 3

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 Determine VCE and IC in voltage-divider biased
transistor circuit below if βDC=100.

20
VOLTAGE-DIVIDER BIAS FOR
PNP TRANSISTOR

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 Pnp transistor has opposite polarities from npn.
To obtain pnp, required negative collector supply
voltage or with a positive emitter supply voltage.
The analysis of pnp is basically the same as npn.

21
a. Negative collector b. Positive emitter
Supply supply voltage
ANALYSIS OF VOLTAGE BIAS
FOR PNP TRANSISTOR

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 Base voltage  R1 
VB   V EE
R R  R 
 1 2 DC E 
 Emitter voltage VE  VB  VBE

 By Ohm’s Law, I  VEE  VE


E
RE  RB
DC

 And, VC  I C RC
22
V EC  V E  VC
EXAMPLE 4

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 Evaluate IC and VEC for pnp transistor circuit in Figure below.
Given VEE = +15V, R1 = 63kΩ, R2 = 27kΩ, RC = 1.8kΩ, RE =
2.6kΩ, βDC =120.

23
EXAMPLE 5
 Figure below shown the schematic with a negative supply

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voltage, determine IC and VCE for a pnp transistor circuit
with given values: R1 = 25kΩ, R2 = 60kΩ, RC = 6kΩ, RE
= 9kΩ, VCC = -12V, and βDC = 90

24
EXAMPLE 6

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 Construct a complete circuit required to replace the
transistor in Figure below with a pnp transistor. Given VCC
= 10V, R1 = 78kΩ, R2 = 100kΩ, RC = 18kΩ, RE = 8kΩ.

25
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OTHER BIAS
METHODS
 BASE BIAS
 EMITTER BIAS
 COLLECTOR-FEEDBACK BIAS
OTHER BIAS METHODS – BASE
BIAS

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 KVL apply on base circuit.
VCC – VRB – VBE = 0 or VCC – IBRB – VBE =0
 Solving for IB, VCC  VBE
IB 
RB

 Then, apply KVL around collector


 circuit. VCC – ICRC – VCE = 0
 We know that IC = βDCIB,

 VCC  V BE 
I C   DC   27

 RB 
BASE BIAS

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 From the equation of IC, note that IC is
dependent on DC. When DC vary, VCE
also vary, thus changing Q-point of
transistor.
 This type of circuit is beta-dependent
and very unstable. Recall that DC
changes with temperature and collector
current. Base biasing circuits are
mainly limited to switching
applications. 28
EXAMPLE 7

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 Determine IB, IC and VCE for a base-biased transistor
circuit with the following values: βDC = 160, VCC = 18V,
RB = 43kΩ and RC = 190Ω.

29
EMITTER BIAS

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30
Npn transistor with emitter bias
EMITTER BASE

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 This type of circuit is independent of βDC making it as stable as the
voltage-divider type. The drawback is that it requires two power
suppliers
 Apply KVL and Ohm’s Law,
IBRB + IERE + VBE = VEE IE
IB 
 Since IC ≈ IE and IC = βDCIB,  DC
VEE  VBE
IC 
RB
 Solve for IE or IC, ( )  RE

 Voltage equations for emitter base circuit,
VE = VEE - IERE
31
VB = VE + VBE
VC = VCC - ICRC
EMITTER BASE

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 Apply KVL and Ohm’s Law,
IBRB + IERE + VBE = VEE
 Since IC ≈ IE and IC = βDCIB,
IE
IB 
 DC
 Solve for IE or IC,

 VEE  VE
IE 
RE

32
EXAMPLE 8

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 Calculate IE and VCE for the circuit below using VE = -1V
and IC = IE, RB = 47kΩ, RC = 4.7kΩ, RE = 10kΩ, VCC = 15V
and VEE = -15V

33
COLLECTOR-FEEDBACK BIAS

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Collector-feedback bias is
kept stable with negative
feedback, although it is not
as stable as voltage-
divider or emitter. With
increases of IC, VC decrease
and causing decrease in
voltage across RB, thus IB
also decrease. With less IB,IC
go down as well.
34
ANALYSIS OF COLLECTOR-
FEEDBACK CIRCUIT

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 By Ohm’s Law, VC  V BE
IB 
RB

 Collector voltage with assumption IC>>IB.


 VC = VCC – ICRC
 And IB = IC / βDC

 So, collector current equation


VCC  V BE
IC 
RC  RB /  DC
 Since emitter is ground, VCE = VC.
 VCE = VCC - ICRC 35
EXAMPLE 9

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 Determine IC, VB, VC and Power rating in figure below.

36
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SUMMARY
SUMMARY

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 The purpose of biasing is to establish a
stable operating point (Q-point).
 The dc load line helps to establish the Q-
point for a given collector current.
 Q-point is used to avoid amplifier goes into
saturation and cutoff
 The linear region of a transistor is the
region of operation within saturation and
cutoff.
38
SUMMARY

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 Voltage-divider bias is most widely used
because it is stable and uses only one
voltage supply.
 Base bias is very unstable because it is β
dependent.
 Emitter bias is stable but require two
voltage supplies.
 Collector-back is relatively stable when
compared to base bias, but not as stable 39
as voltage-divider bias.

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