Scribd
Upload
26 views7 pages

MOSFET

Uploaded by

sakthivel222sanjay
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
26 views7 pages

MOSFET

Uploaded by

sakthivel222sanjay
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 7

MOSFET

(Metal Oxide Semiconductor Field Effect Transistor)


What is MOSFET?
A Metal Oxide Semiconductor Field-effect Transistor (MOSFET, MOS-
FET, or MOS FET) is a field-effect transistor (FET with an insulated gate)
where the voltage determines the conductivity of the device.

It is used for switching or amplifying signals. The ability to change


conductivity with the amount of applied voltage can be used for amplifying or
switching electronic signals.

MOSFETs are now even more common than BJTs (bipolar junction
transistors) in digital and analog circuits. The silicon dioxide forms the Gate
of the MOSFET. It is used to provide isolation by preventing the direct flow of
charges on the gate to the conducting channel.

Why MOSFET over BJT?

MOSFETs are used as amplifiers due to its high input impedance which allows
amplifiers to capture almost all incoming signals and that’s why we choose
MOSFET over BJT.

Different Types of MOSFET:


MOSFET works in two modes-

1. Depletion Mode: The transistor requires the Gate-Source voltage (VGS)


to switch the device “OFF”. The depletion-mode MOSFET is equivalent to a
“Normally Closed” switch.

2. Enhancement Mode: The transistor requires a Gate-Source


voltage(VGS) to switch the device “ON”. The enhancement mode MOSFET is
equivalent to a “Normally Open” switch.

CONSTRUCTION:

• It is a four-terminal device with Source (S), Drain (D), Gate (G),


and body (B) terminals.
• The p-type semiconductor forms the base of the MOSFET.
• The two types of the base are highly doped with an n-type impurity
which is marked as n+ in the diagram.
• From the heavily doped regions of the base, the terminals source
and drain originate.
• The layer of the substrate is coated with a layer of silicon dioxide for
insulation.
• A thin insulated metallic plate is kept on top of the silicon dioxide and
it acts as a capacitor.
• The gate terminal is brought out from the thin metallic plate.
• A DC circuit is then formed by connecting a voltage source between
these two n-type regions

Principle:
When voltage is applied to the gate, an electrical field is generated that changes
the width of the channel region, where the electrons flow. The wider the channel
region, the better conductivity of a device will be.

Operation of MOSFET:
• The working principle of a MOSFET depends upon the MOS capacitor.
The MOS capacitor is the main part of MOS-FET.

• The semiconductor surface at the below oxide layer is located between


the source and drain terminals. It can be inverted from p-type to n-
type by applying positive or negative gate voltages.

• When we apply positive gate voltage, the holes present under the
oxide layer experience a repulsive force, and holes are pushed
downward with the substrate.
• The depletion region is populated by the bound negative charges that
are associated with the acceptor atoms. The electrons reach, and the
channel is formed.

• The positive voltage also attracts electrons from the n+ source and
drain regions into the channel.

• Now, if a voltage is applied between the drain and source, the current
flows freely between the source and drain and the gate voltage
controls the electrons in the channel.

• If we apply negative voltage, a hole channel will be formed under the


oxide layer.

P Channel MOSFET:
• The drain and source are heavily doped p+ region and the substrate is
in n-type. The current flows due to the flow of positively charged holes,
and that’s why known as p-channel MOSFET.

• When we apply negative gate voltage, the electrons present beneath


the oxide layer experience repulsive force and are pushed downward
into the substrate, the depletion region is populated by the bound
positive charges which are associated with the donor atoms.

• The negative gate voltage also attracts holes from the P+ source and
drain region into the channel region.

N Channel MOSFET:
• The drain and source are heavily doped N+ region and the substrate is
p-type. The current flows due to the flow of negatively charged
electrons and that’s why known as n-channel MOSFET.

• When we apply the positive gate voltage, the holes present beneath
the oxide layer experience repulsive force, and the holes are pushed
downwards into the bound negative charges which are associated with
the acceptor atoms.

• The positive gate voltage also attracts electrons from the N+ source
and drain region into the channel thus an electron-rich channel is
formed.

Cut-Off Region
The cut-off region is a region in which there will be no conduction and as a
result, the MOSFET will be OFF. In this condition, MOSFET behaves like an
open switch.

Ohmic Region
The ohmic region is a region where the current (IDS)increases with an
increase in the value of VDS. When MOSFETs are made to operate in this
region, they are used as amplifiers.

Saturation Region
In the saturation region, the MOSFETs have their IDS constant in spite of an
increase in VDS and occurs once VDS exceeds the value of pinch-off
voltage VP. Under this condition, the device will act like a closed switch
through which a saturated value of IDS flows. As a result, this operating
region is chosen whenever MOSFETs are required to perform switching
operations.

MOSFET as a Switch
MOSFETs are commonly used as switches. The switching characteristics for
both N-channel and P-channel type MOSFET are
Characteristics of MOSFET:

Applications:
• Amplifiers
• Regulation for DC Motors
• Constructions of chopper amplifiers
• Switching and Amplifying Signals

You might also like