JEPPIAAR INSTITUTE OF TECHNOLOGY

“Self-Belief | Self Discipline | Self Respect”

DEPARTMENT
OF
ELECTRONICS AND COMMUNICATION ENGINEERING

LECTURE NOTES
EC8351 – ELECTRONIC CIRCUITS 1
(Regulation 2017)

Year/Semester: II/03
2021 – 2022

Prepared by
Ms.S.SUREKHA
Assistant Professor/ECE
 SYLLABUS
EC8351 ELECTRONIC CIRCUITS 1 LTPC 3003

OBJECTIVES:
 To understand the methods of biasing transistors
 To design and analyze single stage and multistage amplifier circuits
 To analyze the frequency response of small signal amplifiers
 To design and analyze the regulated DC power supplies.
 To troubleshoot and fault analysis of power supplies

UNIT I BIASING OF DISCRETE BJT, JFET AND MOSFET

BJT– Need for biasing — DC Load Line and Bias Point — DC analysis of Transistor circuits
— Various biasing methods of BJT — Bias Circuit Design — Thermal stability — Stability
factors — Bias compensation techniques using Diode, thermistor and sensistor — Biasing
BJT Switching Circuits- JFET — DC Load Line and Bias Point — Various biasing methods
of JFET — JFET Bias Circuit Design — MOSFET Biasing — Biasing FET Switching
Circuits.

UNIT II BJT AMPLIFIERS

Small Signal Hybrid p equivalent circuit of BJT — Early effect — Analysis of CE, CC and
CB amplifiers using Hybrid p equivalent circuits — AC Load Line Analysis- Darlington
Amplifier — Bootstrap technique — Cascade, Cascode configurations — Differential
amplifier, Basic BJT differential pair — Small signal analysis and CMRR.

UNIT III SINGLE STAGE FET, MOSFET AMPLIFIERS

Small Signal Hybrid p equivalent circuit of FET and MOSFET — Analysis of CS, CD and
CG amplifiers using Hybrid p equivalent circuits — Basic FET differential pair- BiCMOS
circuits.

UNIT IV FREQUENCY RESPONSE OF AMPLIFIERS

Amplifier frequency response — Frequency response of transistor amplifiers with circuit

capacitors — BJT frequency response — short circuit current gain — cut off frequency — fa,
fß and unity gain bandwidth — Miller effect — frequency response of FET — High
frequency analysis of CE and MOSFET CS amplifier — Transistor Switching Times.

UNIT V POWER SUPPLIES AND ELECTRONIC DEVICE TESTING

Linear mode power supply — Rectifiers — Filters — Half-Wave Rectifier Power Supply —
Full- Wave Rectifier Power Supply — Voltage regulators: Voltage regulation — Linear
series, shunt and switching Voltage Regulators — Over voltage protection — BJT and
MOSFET — Switched mode power supply (SMPS) — Power Supply Performance and
Testing — Troubleshooting and Fault Analysis, Design of Regulated DC Power Supply.
TOTAL: 45 PERIODS
OUTCOMES:
After studying this course, the student should be able to:
Acquire knowledge of Working principles, characteristics and applications of BJT and
FETFrequency response characteristics of BJT and FET amplifiers
Analyze the performance of small signal BJT and FET amplifiers - single stage and
multi stage amplifiers
Apply the knowledge gained in the design of Electronic circuits

TEXT BOOKS:
1. Donald. A. Neamen, Electronic Circuits Analysis and Design, 3rd Edition, Mc
Graw Hill Education (India) Private Ltd., 2010. (Unit I-IV)
2. Robert L. Boylestad and Louis Nasheresky, ―Electronic Devices and Circuit Theory‖,
11thEdition, Pearson Education, 2013. (Unit V)

REFERENCES
1. Millman J, Halkias.C.and Sathyabrada Jit, Electronic Devices and Circuits, 4th
Edition, Mc Graw Hill Education (India) Private Ltd., 2015.
2. Salivahanan and N. Suresh Kumar, Electronic Devices and Circuits, 4th
Edition, , Mc Graw Hill Education (India) Private Ltd., 2017.
3. Floyd, Electronic Devices, Ninth Edition, Pearson Education, 2012.
4. David A. Bell, Electronic Devices & Circuits, 5th Edition, Oxford University Press,
2008.
5. Anwar A. Khan and Kanchan K. Dey, A First Course on Electronics, PHI, 2006.
6. Rashid M, Microelectronics Circuits, Thomson Learning, 2007
 EC8351 - Electronic Circuits I Dept of ECE

UNIT IV

4.1 General shape of frequency response of amplifiers

An audio frequency amplifier which operates over audio frequency range

extending from 20 Hz to 20 kHz. Audio frequency amplifiers are used in radio receivers,
large public meeting and various announcements to be made for the passengers on
railway platforms. Over the range of frequencies at which it is to be used an amplifier
should ideally provide the same amplification for all frequencies. The degree to which
this is done is usually indicated by the curve known as frequency response curve of the
amplifier.

To plot this curve, input voltage to the amplifier is kept constant and frequency of
input signal is continuously varied. The output voltage at each frequency of input signal
is noted and the gain of the amplifier is calculated. For an audio frequency amplifier, the
frequency range is quite large from 20 Hz to 20 kHz. In this frequency response, the gain
of the amplifier remains constant in mid-frequency while the gain varies with frequency
in low and high frequency regions of the curve. Only at low and high frequency ends,
gain deviates from ideal characteristics. The decrease in voltage gain with frequency is
called roll-off.

4.2 Definition of cut-off frequencies and bandwidth:

The range of frequencies can be specified over which the gain does not deviate
more than 70.7% of the maximum gain at some reference mid-frequency.

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From above figure, the frequencies f1 & f2 are called lower cut-off and upper cut-off
frequencies.
Bandwidth of the amplifier is defined as the difference between f2 & f1.
Bandwidth of the amplifier = f2 - f1
The frequency f2 lies in high frequency region while frequency f1 lies in low
frequency region. These two frequencies are also called as half-power frequencies since
gain or output voltage drops to 70.7% of maximum value and this represents a power
level of one half the power at the reference frequency in mid-frequency region.

4.3 Low frequency analysis of amplifier to obtain lower cut-off frequency:

4.3.1 Decibel Unit:

The decibel is a logarithmic measurement of the ratio of one power to another or

one voltage to another. Voltage gain of the amplifier is represented in decibels (dBs). It is
given by,
Voltage gain in dB = 20 log Av
Power gain in decibels is given by,
Power gain in dB = 10 log Ap
Where Av is greater than one, gain is positive and when Av is less than one, gain
is negative. The positive and negative gain indicates that the amplification and
attenuation respectively. Usually the maximum gain is called mid frequency range gain is
assigned a 0 db value. Any value of gain below mid frequency range can be referred as 0
db and expressed as a negative db value.
Example:
Assume that mid frequency gain of a certain amplifier is 100. Then,
Voltage gain = 20 log 100 = 40 db
At f1 and f2 Av = 100/√2 = 70.7
Voltage gain at f1 = Voltage gain at f2 = 20 log 70.7 = 37 db

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Fig. Normalized voltage gain vs frequency

From above figure, it shows that the voltage gain at f1 and f2 is less than 3db of the
maximum voltage gain. Due to this the frequencies f1 and f2 are also called as 3 db
frequencies. At f1 & f2 power gain drops by 3 db. For all frequencies within the
bandwidth, amplifier power gain is at least half of the maximum power gain. This
bandwidth is also referred to as 3 db bandwidth.
4.3.2 Significance of octaves and decades:
The octaves and decades are the measures of change in frequency. A ten
times change in frequency is called a decade. Otherwise, an octave corresponds to a
doubling or halving of the frequency.
Example:
An increase in frequency from 100 Hz to 200 Hz is an octave.
A decrease in frequency from 100 kHz to 50 kHz is also an octave.

Fig. Frequency response showing significance of decade and octave

At lower and higher frequencies the decrease in the gain of amplifiers is often indicated
in terms of db/decades or db/octaves. If the attenuation in gain is 20 db for each decade,
then it is indicated by line having slope of 20 db/decade. A rate of -20 db/decade is

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approximately equivalent to -6db/octave. A rate of -40 db/decade is approximately

equivalent to -12db/octave.

4.3.3 Midband gain:

It is defined as the band of frequencies between 10 f1 and 0.1 f2. It is denoted as

midband gain or Amid.
The voltage gain of the amplifier outside the midband is approximately given as,

In midband,

Midband:

Below the midband,

As a result, the equation becomes,

Below midband:

Above midband,

As a result, the equation becomes,

Above midband:

Problem:

For an amplifier, midband gain = 100 and lower cutoff frequency is 1 kHz. Find the gain
of an amplifier at frequency 20 Hz.

Solution:

Below midband:

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4.4 Effect of various capacitors on frequency response:

4.4.1 Effect of coupling capacitors:

The reactance of the capacitor is Xc = 1/2∏fc

At medium and high frequencies, the factor f makes Xc very small, so that all
coupling capacitors behave as short circuits. At low frequencies, Xc increases. This
increase in Xc drops the signal voltage across the capacitor and reduces the circuit gain.
As signal frequencies decrease, capacitor reactance increase and gain continues to fall,
reducing the output voltage.

4.4.2 Effect of Bypass capacitors:

At lower frequencies, bypass capacitor CE is not a short. So emitter is not at ac
ground. Xc in parallel with RE creates an impedance. The signal voltage drops across this
impedance reducing the circuit gain.

4.4.3 Effect of internal transistor capacitances:

At high frequencies, coupling and bypass capacitors act as short circuit and do
not affect the amplifier frequency response. At high frequencies, internal capacitances,
commonly known as junction capacitances. The following figure shows the junction
capacitances for both BJT and FET. Incase of BJT, Cbe is the base emitter junction
capacitance and Cbc is the base collector junction capacitance. Incase of FET, Cgs is the
internal capacitance between gate and source and Cgd is the internal capacitance between
gate and drain.

Fig. Internal transistor capacitances

4.5 Miller Theorem:

In transistor amplifiers, it is necessary to split the capacitance between input

and output. It can be achieved by using miller’s theorem. In the following figure, Av

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represents absolute voltage gain of the amplifier at midrange frequencies and C

represents either Cbc (incase of BJT) or Cgd (incase of FET).

Fig. Splitting of capacitor using Miller’s theorem

4.6 Low frequency analysis of BJT:

Fig. Typical RC coupled common emitter amplifier

From above figure, it has three RC networks that affect its gain as the frequency is
reduces below midrange. These are,
1. RC network formed by the input coupling capacitor C1 and input impedance of
the amplifier.
2. RC network formed by the output coupling capacitor C2, resistance looking in at
the collector and load resistance.
3. RC network formed by the emitter bypass capacitor CE and resistance looking in
at the emitter.

Input RC network:
The following figure shows the input RC network formed by C1 and the
input impedance of the amplifier.
The resistance value is Rin = R1 || R2 || Rin(base)

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Applying voltage divider rule,

A critical point in the amplifier response is generally accepted to occur when the output
voltage is 70.7 % of the input. At critical point,

At this condition, Rin = Xc1

Overall gain is reduced due to attenuation provided by the input RC network. The
reduction in overall gain is given by,

The frequency fc at this condition is called lower critical frequency and it is given by,

If the resistance of input source is taken into account the above equation becomes,

The phase angle in an input RC circuit is expressed as

Output RC network:

The above figure shows the output RC network formed by C2, resistance looking in at the
collector and load resistance.

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The critical frequency for this RC network is given by,

The phase angle in output RC network is given as,

Bypass network:

From above figure,

is the resistance looking in at the emitter. It is derived as follows,

R= (Vb / βIb) + hie / β

Where RTH = R1 || R2 || Rs. It is the thevenin’s equivalent resistance looking from the base
of the transistor towards the input.
The critical frequency for the bypass network is

Problem:
Determine the low frequency response of the amplifier circuit shown in the figure.

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Solution:
It is necessary to analyze each network to determine the critical frequency of the
amplifier.

The above analysis shows that the input network produces the dominant lower critical
frequency. Then the low frequency response of the given amplifier is shown in the
following figure.

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4.7 Low frequency analysis of FET amplifier:

From above figure, it has two RC networks that affect its gain as the frequency is reduced
below midrange. These are,
1. RC network formed by the input coupling capacitor C1 and input impedance of
the amplifier.
2. RC network formed by the output coupling capacitor and the output impedance
looking in at the drain.
`Input RC network:
Lower critical frequency of this network is given as,

The value of Rin(gate) can be determined from the data sheet as follows:

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The phase shift in low frequency input RC circuit is θ = tan-1 (XC1 / Rin )
Output RC network:
Lower critical frequency of this network is given as,

The phase shift in low frequency output RC circuit is θ = tan-1 (XC2 / RD + RL)

4.8 Hybrid - π equivalent circuits of BJTs:

At low frequencies, we can analyze the transistor using h-parameters. But

for high frequency, analysis of h-parameter model is not suitable for following
reasons.
1. The values of h-parameters are not constant at high frequencies. So it is necessary
to analyze transistor at each and every frequency which is impractical.
2. At high frequency h-parameters become complex in nature.

Due to the above reasons, modified T model and hybrid ∏ models are used for high
frequency analysis of the transistor. These models give a reasonable compromise
between accuracy and simplicity to do high frequency analysis of the transistor.
4.4.1 Hybrid - π common emitter transistor model:
Common emitter circuit is most important practical configuration and this
is useful for the analysis of transistor using hybrid - ∏ model. The following figure
shows the hybrid - ∏ model for a transistor in CE configuration. For this model, all
parameters are assumed to be independent of frequency. But they may vary with the
quiescent operating point.

Fig. Hybrid - ∏ model for a transistor in CE configuration

4.8.1 Elements in hybrid – π model:

Cb’e and Cb’c : Forward biased PN junction exhibits a capacitive effect called diffusion
capacitance. This capacitive effect of normally forward biased base-emitter junction of
the transistor is represented by Cb’e or Ce. The diffusion capacitance is connected between
b’ and e represents the excess minority carrier storage in the base.
The reverse bias PN junction exhibits a capacitive effect called transition capacitance.
This capacitive effect of normally reverse biased collector base junction of the transistor
is represented by Cb’c or Cc.

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rbb’: The internal node b’ is physically not accessible bulk node b represents external base
terminal.
rb’e: It is the portion of the base emitter which may be thought of as being in series with
the collector junction. This establishes a virtual base b’ for junction capacitances to be
connected instead of b.
rb’c: Due to early effect, varying voltages across collector to emitter junction results in
base-width modulation. A change in the effective base-width causes the emitter current to
change. This feedback effect between output and input is taken into account by
connecting gb’c or rb’c between b’ and c.
gm: Due to small changes in voltage Vb’e across emitter junction, there is excess minority
carrier concentration injected into the base which is proportional to Vb’e. So resulting
small signal collector current with collector shorted to the emitter is also proportional to
Vb’e.
gm is also called as transconductance and it is given as,

rce: It is the output resistance. It is also the result of early effect.

4.4.1.2 Hybrid – π parameter values:
The following table shows the typical values for hybrid - π parameters at room
temperature and for Ic = 1.3mA.
Parameter Meaning Value

gm Mutual conductance 50mA/V

rbb’ Base spreading resistance 100Ω
rb’e or gb’e Resistance between b’ and e 1kΩ
Conductance between b’ and e 1m mho
rb’c or gb’c Resistance of reverse biased PN junction 4MΩ
between base and collector 0.25*10-6 mho
Conductance of reverse biased PN junction
between base and collector
rce or gce Output resistance between c and e 80kΩ
Conductance between c and e 12.5*10-6 mho
Ce Junction capacitance between b and e 100pF
Cc Junction capacitance between base and 3pF
collector

4.8.2 Hybrid – π conductances:

4.8.2.1 Transistor Transconductance gm:

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Let us consider a p-n-p transistor in CE configuration with Vcc bias in the collector circuit
as shown in the above figure.
Transconductance gm is given as,

The collector current in active region is given as,

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For Ic = 1.3mA, gm = 0.05mho or 50 mA/V. For Ic = 7.8mA, gm = 0.3mho or 300mA/V.

These values are much larger than the transconductances obtained with FETs.
4.8.2.2 Input Conductance gb’e:

First consider h-parameter model for CE configuration. Applying KCL to output circuit,

Making Vce = 0, the short circuit current gain hfe is defined as,

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Substituting the value of IC / Ib,

4.8.2.3 Feedback Conductance gb’c:

Let us consider h-parameter model for CE configuration with input open circuit
(Ib = 0), Vi is given as,

Fig. Hybrid –π model for CE configuration

With Ib = 0, Vce is given as,

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Vce =

I1 =
Voltage between b’ and e, Vb’e can be given as,

Vb’e =

With Ib = 0,
Vi = Vb’e

Substituting the value of Vi,

hreVce =

rb’c =

Substituting the value of rb’e,

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4.8.2.4.Base Spreading Resistance rbb’:

Substituting the value of rb’e,

4.8.2.5 Output Resistance gce:

Using h-parameters output conductance is given as,

Applying KCL to the output circuit,

1/rce = gce =

Relation between hybrid-π and h-parameters:

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4.4.3 Hybrid – π capacitances:

Ce = gm

2πft
4.4.4 CE short circuit current gain using hybrid- π model:

Fig. Hybrid- π model for a single transistor with a resistive load RL

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The current gain for the circuit is,

Fig. Frequency vs current gain

fβ (Cutoff frequency):

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It is the frequency at which the transistor short circuit CE current gain drops by
3dB or 1/√√2 times from its value at low frequency. It is given as,

fα (Cut-off frequency):

It is the frequency at which the transistor short circuit CB current gain drops
by 3dB or 1/√√2 times from its value at low frequency.
The current gain for CB configuration is given as,

Parameter fT:
It is the frequency at which short circuit CE current gain becomes unity.
At f = fT,

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The ratio of fT / fβ is quite large compared to 1.

fT = gm / 2πCe
Problem:

Short circuit CE current gain of transistor is 25 at a frequency of 2MHz if fβ = 200 kHz.

Calculate (i) fT (ii) hfe (iii) Find |Ai| at a frequency of 10 MHz and 100 MHz.
Solution:

4.4.5 Current gain with resistive load:

For further simplification,

At output circuit value of Cc can be calculated as,

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Fig. Simplified hybrid – π model for CE with RL

Z = Vb’e

Ib

Ai =

fH is the frequency at which the transistor gain drops by 3dB or 1/√2 times from its value
at low frequency. It is given as,

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4.8.6 Current gain including source resistance:

Ais at low frequency

= = - hfe RS

Rs + hie

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4.8.7 Voltage gain including source resistance:

4.8.8 Cutoff frequency including source resistance:

For RL = 0,

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4.8.9 Gain Bandwidth Product:

4.8.9.1 Gain Bandwidth Product for Voltage:

= RL fT
*
Rs + rbb’ 1 + 2πfTC CR L

4.8.9.2 Gain Bandwidth Product for current:

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4.9 High frequency analysis of FET

4.9.1 Common source amplifier at high frequencies:

Voltage gain:

Input Admittance:

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Input capacitance (Miller Effect):

This increase in input capacitance Ci over the capacitance from gate to source is called
Miller effect.
This input capacitance affects the gain at high frequencies in the operation of cascaded
amplifiers. In cascaded amplifiers, the output from one stage is used as the input to a
second amplifier. The input impedance of a second stage acts as a shunt across output of
the first stage and Rd is shunted by the capacitance Ci.
Output Admittance:
From above figure, the output impedance is obtained by looking into the drain with the
input voltage set equal to zero. If Vi = 0 in figure, rd , Cds and Cgd in parallel. Hence the
output admittance with RL considered external to the amplifier is given by,

4.9.2 Common Drain Amplifier at High Frequencies:

Fig. Common Drain Amplifier Circuit & Small signal equivalent circuit at high
frequencies
Voltage gain:
The output voltage Vo can be found from the product of the short circuit
and the impedance between terminals S and N. Voltage gain is given by,

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Input Admittance:

Input Admittance Yi can be obtained by applying Miller’s theorem to Cgs.

It is given by,

Output Admittance:

Output Admittance Yo with Rs considered external to the amplifier, it is

given by,

At low frequencies, output resistance Ro is given by,

4.9.3 Frequency Response of Common Source Amplifier:

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Let us consider a typical common source amplifier as shown in the above figure.

From above figure, it shows the high frequency equivalent circuit for the given amplifier
circuit. It shows that at high frequencies coupling and bypass capacitors act as short
circuits and do not affect the amplifier high frequency response. The equivalent circuit
shows internal capacitances which affect the high frequency response.
Using Miller theorem, this high frequency equivalent circuit can be further simplified as
follows:
The internal capacitance Cgd can be splitted into Cin(miller) and Cout(miller) as shown in the
following figure.

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Where

From simplified high frequency equivalent circuit, it has two RC networks which affect
the high frequency response of the amplifier. These are,
1. Input RC network
2. Output RC network
Input RC network:

Fig. Input RC network

From above figure,

This network is further reduced as follows since Rs << RG

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Fig. Reduced input RC network

The critical frequency for the reduced input RC network is,

Output RC network:

Fig. Output RC network

The critical frequency for the above circuit is,

fc =
It is not necessary that these frequencies should be equal. The network which has lower
critical frequency than other network is called dominant network.

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The phase shift in high frequency is

Problem:
Determine the high frequency response of the amplifier circuit shown in the following
figure.

Solution:
Before calculating critical frequencies it is necessary to calculate mid frequency gain of
the given amplifier circuit. This is required to calculate Cin(miller) and Cout(miller).
Av = -gmRD
Here RD should be replaced by RD || RL
Av=

Cin(miller)=

Cout(miller)=

Cgs = Ciss – Crss = 4pF

Now analyze the input and output network for critical frequency,

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fc(input) =

The above analysis shows that the output network produces the dominant higher critical
frequency. High frequency response of the given amplifier is shown in the following
figure.

Fig. High frequency response of the amplifier

4.10 Frequency Response of Multistage Amplifiers:

The bandwidth of multistage amplifier is always less than that of the

bandwidth of single stage amplifier.
4.10.1 Overall Lower Cut-off Frequency of Multistage Amplifier:

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Let us consider the lower 3dB frequency of n identical cascaded stages as

fL (n). It is the frequency for which the overall gain falls to 1/√2 (3dB) of its midband
value.

Squaring on both the sides &

Taking square root on both the sides,

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4.10.2 Overall Higher Cut-off Frequency of Multistage Amplifier:

Let us consider the upper 3dB frequency of n identical cascaded stages as
fH(n). It is the frequency for which the overall gain falls to 1/√2 (3dB) of its midband
value.

Squaring both the sides,

Taking nth root on both the sides,

21/n = 1 + [ fH(n)/fH ]2
21/n -1 = [ fH(n)/fH ]2
Taking square root on both the sides,
√21/n -1 = fH(n)/fH
fH(n) = fH √21/n -1

In multistage amplifier fL(n) is always greater than fL and fH(n) is always less than fH. So
the bandwidth of multistage amplifier is always less than single stage amplifier.

4.11 Rise time and its Relation to Upper Cut-off Frequency:

4.11.1 Upper 3 dB Frequency:

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When a step input is applied, amplifier high frequency RC network

prevent the output from responding immediately to the step input. The output voltage
starts from zero and rises towards the steady state value V, with a time constant R2C2 as
shown in the above figure.
The output voltage is given by,

The time required for Vo to reach one-tenth of its final value is calculated as,

The difference between these two values is called as rise time tr of the circuit. The rise
time is given as,

The Upper 3dB frequency is given as,

Upper 3dB frequency in terms of rise time is given as,

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From above equation, it shows that upper 3dB frequency is inversely proportional to the
rise time tr.

4.12 Relation between Bandwidth and Rise time:

The frequency range from fL to fH is called bandwidth of the amplifier. Usually fL << fH.
So we can approximate the equation for bandwidth as follows,

The relation between rise time with upper frequency as,

So we can relate bandwidth with rise time as follows,

Problem:
If the rise time of BJT is 35ns, what is the bandwidth that can be obtained using this BJT.
Solution:
tr = 0.35 / f2 = 0.35 / BW
BW = 0.35 / tr = 0.35 / (35 * 10-9) = 10MHz
4.9 Sag and its Relation to Lower Cut-off Frequency:
The amplifier low frequency RC network consists of coupling and bypass
capacitors make amplifier output to decrease with large time constant. As a result, the
output voltage has sag or tilt associated with it as shown in the following figure.

The tilt or sag in time t1 is given by,

The lower 3 dB frequency can be determined from the output response by carefully
measuring the tilt.
The lower 3 dB frequency is given as,

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 EC8351 - Electronic Circuits I Dept of ECE

So, the lower 3 dB frequency can be represented in terms of tilt is measured from the
following figure.

= πfL / f * 100

fL = Pf

100π
Problem 1:
For a circuit shown in the following figure, calculate percentage tilt. Assume approximate
h-parameter circuit for the transistor.

Solution:

2021-2022 Jeppiaar Institute of Technology

 EC8351 - Electronic Circuits I Dept of ECE

Equivalent h-parameter circuit for the given circuit is,

fL =
Here R1 = RC + RL = 4K + 2K
= 6KΩ

fL =
We know that, P = (∏fL / f) * 100
Assuming f = 200 Hz
P = (∏ * 2.65 / 200) * 100
P = 4.1%

QUESTIONS
2 MARKS

1. Draw the frequency response curve of an amplifier.

2. What is the bandwidth of an amplifier?
3. Define rise time.
4. What kind of techniques required increasing the input impedance?
5. Give relation between rise time and bandwidth.
6. Give the main reason for the drop in gain at the low frequency region & high
frequency region.
7. If the rise time of BJT is 35nS, what is the bandwidth that can be obtained using this
BJT?
8. For an amplifier, mid band gain is 100 & lower cutoff frequency is 20KHz. Find the
gain of an amplifier at frequency 20Hz.
9. For an amplifier, 3dB gain is 200 & higher cutoff frequency is 20KHz. Find the gain of
an amplifier at frequency 100KHz.
10. Why common base amplifier is preferred for high frequency signal when compared to
CE amplifier?
11. Draw the hybrid π equivalent circuit of BJTs.
12. What is the difference between small signal equivalent & hybrid π equivalent circuit.

2021-2022 Jeppiaar Institute of Technology

 EC8351 - Electronic Circuits I Dept of ECE

13. What is high frequency effect?

14. What are the causes for occurrence of upper cutoff frequency in BJT?
15. What is Miller’s effect? What is gain bandwidth product?
16. Give equation of overall lower and upper cutoff frequency of multistage amplifier.
17. What is significance of octaves and decades in frequency response?
18. What are the causes for occurrence of upper cutoff frequency in BJT?
19. What is the major contribution to the Miller capacitance in a MOSFET?
20. Define cut off frequency for a MOSFET.

16 MARKS

1. With neat sketch explain hybrid π CE transistor model. Derive the expression for
various components in terms of ‘h’ parameters.
2. Discuss the frequency response of multistage amplifiers. Calculate the overall upper &
lower cutoff frequencies.
3. Discuss the low frequency response & the high frequency response of an amplifier.
Derive its cutoff frequencies.
4. Discuss the terms rise time and sag.
5. Write short notes on high frequency amplifier.
6. Derive the gain bandwidth for high frequency FET amplifiers.
7. Derive the expression for the CE short circuit current gain of transistor at high
frequency
8. What is the effect of Cb’e on the input circuit of a BJT amplifier at High frequencies?
Derive the equation for gm which gives the relation between gm, Ic and temperature.
9. Explain the high frequency analysis of JFET with necessary circuit diagram & gain
bandwidth product.
10. Discuss the frequency response of MOSFET CS amplifier.
11. Determine the bandwidth of CE amplifier with the following specifications.
R1=100kΩ, R2=10kΩ, RC=9kΩ, RE=2kΩ, C1= C2=25µF, CE=50µF, rbb’=100Ω,
rb’e=1.1KΩ, hfe=225, Cb’e=3pF and Cb’c=100pF.
12. At Ic=1mA & VCE=10v, a certain transistor data shows Cc=Cb’c=3pF, hfe=200, &
ωT=-500M rad/sec. Calculate gm, rb’e, Ce=Cb’e & ωβ.

2021-2022 Jeppiaar Institute of Technology