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NPN Transistor Template

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19 views4 pages

NPN Transistor Template

Uploaded by

user.rony302
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Final Exam suggestion

Q-1. What is transistor? Discase the working principal of NPN transistor.


Ans:
A transistor is a semiconductor device used to amplify or switch electronic signals and
electrical power.

Two types of transistors.


1.NPN Transistor:

2.PNP Transistor:

Two PN junction which make a new component called transistor. The operation of an NPN
transistor can be explained by having a look at the following figure in which emitter-base
junction is forward biased and collector-base junction is reverse biased.

Fig: Emitter Base Collector.


The voltage VEE Provides a negative potential of the emitter which repels the electrons in the
N type material and these electrons cross the emitter-base junction, to reach the base region.
There a very low present of electrons recombine with free holes of p-region.

This provides very low current which constitutes the base current IB. The remaining holes
cross the collector-base junction to constitute the collector current I.

Hence, we can understand that-


*The conduction is a NPN transistor takes through current.
*The collector current is higher than the emitter current.
*The increase or decrease in the emitter current affect the collector current.

Q-2. Describe the operation of a transistor as an amplifier.


Ans:
We can use a transistor as an amplifier b raising the strength of the weak signal. With the help
of suitable diagram, we explain you how transistor circuit acts as an amplifier. The figure given
below shows the basic circuit of a transistor amplifier.

Transistor amplifier circuit:


As shown in the figure above, we apply input signal or the weak signal between the emitter-
base junction and takes the output across the load RC connected in the collector circuit. For
faithful amplification always ensure that the input circuit is forward biased and the output
circuit is reverse biased. For this purpose, we apply d. c voltage IE. VEE in the input circuit in
addition to the signal as shown in the figure above. This d. c voltage is known as a bias
voltage and it’s magnitude is such that if always keeps the input circuit forward biased
despite the polarity of the signal.

Q-3. Difference between FET and BJT.


Ans:
FET BJT
1.FET is an unipolar semiconductor 1.BJT is a bipolar semiconductor device
device. Because its operation depends because the current constituting elements
upon the flow of majority carriers IE are both majority carriers as well as
either holes or electrons as the case may minority carriers in this case.
be.
FET BJT

2.The input impedance of FET is much 2. T to FET.


more large than BJT.
3. FET is a voltage control device. 3. BJT is a current controlled device.
4.FET is less noisy. Because there are no 4.Much noisy than FET.
junctions.
5. Higher frequency response. 5. Frequency variation affects the
performance.
6.Good thermal of absence of minority 6.Temperature dependent thermal runaway
carriers. may be cause.
7.Costier then BJT. 7.Relatively cheaper.
8.Small sized. 8.Comparatively bigger.

Q-4. What is feedback?


Ans:
Feedback: Feedback is a technique use to influence the behavior and properties of a system
by the output quantity of the system the effect produced by a certain influence the
consequent action of that cause feed back to the input a fraction of the output quantity.
Q-5. What are the differences between the depletion and enhancement MOSFET?
Ans:
D- MOSFET E- MOSFET

IT is called as Depletion MOSFET, Because of IT works only in Enhancement mode, hence


depletion of channel. called as Enhancement MOSFET.
n- type semiconductor exists between n- channel doesn’t exist between sources
source and drain in construction it self. and drain
When Vgs = OV, Ids flows due to Vds When Vgs = Ov , Ids = 0 though Vds is applied
It can be used as E- MOSFET It can not be used as a D- MOSFET
Does not occur At Vgs =vt, MOSFET becomes On.

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