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TO-92 Plastic-Encapsulate Transistors: Jiangsu Changjiang Electronics Technology Co.,Ltd

Datasheet

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39 views3 pages

TO-92 Plastic-Encapsulate Transistors: Jiangsu Changjiang Electronics Technology Co.,Ltd

Datasheet

Uploaded by

Rik Jacob
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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com

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD

TO-92 Plastic-Encapsulate Transistors

D965 TRANSISTOR（ NPN ） TO—92

FEATURES

1.EMITTER
Power dissipation
PCM : 0.75 W（Tamb=25℃） 2. COLLECTOR

Collector current
3. BASE
ICM : 5 A 1 2 3
Collector-base voltage
V(BR)CBO : 42 V
Operating and storage junction temperature range
T J ，T stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）


Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO Ic=1ｍA， IE=0 42 V

Collector-emitter breakdown voltage V(BR)CEO Ic= 1 mA， IB=0 22 V

Emitter-base breakdown voltage V(BR)EBO IE= 10 μA， IC=0 6 V

Collector cut-off current ICBO VCB= 30 V , IE=0 0.1 μA

Emitter cut-off current IEBO VEB= 6 V， IC=0 0.1 μA


VCE= 2 V, IC= 0.15
HFE（1） 150
mA

DC current gain HFE（2） VCE= 2V, IC = 500 mA 340 950

VCE= 2V, IC = 2000


HFE（3） 150
mA

Collector-emitter saturation voltage VCE(sat) IC=3000mA,IB=100 mA 0.35 V

CLASSIFICATION OF HFE(2)
Rank R T

Range 340-600 560-950


TO-92 PACKAGE OUTLINE DIMENSIONS

D D1

A1
A

C
E

b
φ
L

e
e1

Dimensions In Millimeters Dimensions In Inches


Symbol
Min Max Min Max
A 3.300 3.700 0.130 0.146
A1 1.100 1.400 0.043 0.055
b 0.380 0.550 0.015 0.022
c 0.360 0.510 0.014 0.020
D 4.400 4.700 0.173 0.185
D1 3.430 0.135
E 4.300 4.700 0.169 0.185
e 1.270TYP 0.050TYP
e1 2.440 2.640 0.096 0.104
L 14.100 14.500 0.555 0.571

Ö 1.600 0.063
0.000 0.380 0.000 0.015

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