Helwan university

Faculty of engineering
Electronics and Communication Department

Academic year : 1𝑠𝑡 First term:2022/2023

Electronics devices lab

Name:
Section:
Grade:
Date:

Experiment 1
Diode characteristic
Helwan university
Faculty of engineering
Electronics and Communication Department

Objective
• To calculate, compare, draw, and measure the characteristics
of a silicon and germanium diode.
• To study the series and parallel configurations of a silicon
and germanium diodes.

Tools and Equipment Required

DMM (Digital Multi Meter)
DC Power Supply
1 kΩ ×1
1 MΩ ×1
Silicon Diode ×1
Germanium Diode ×1

Procedures
PART 1. Diode Test
a) Diode testing Scale
The diode-testing scale of a DMM can be used to determine the operating
condition of a diode. With one polarity, the DMM should provide ''offset voltage"

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Helwan university
Faculty of engineering
Electronics and Communication Department

of the diode, while the reverse connection should result is an ''OL" response to
support the open-circuit approximation.

Using the connections shown in Fig1.2, the constant-current source of

about 2 mA internal to the meter will forward bias the junction, and a voltage
about 0.7 V (700mV) will be obtained for silicon and 0.3 V (300mV) for
germanium. If the leads are reserved, an OL indication will be obtained.

If a low reading (less than 1 V) is obtained in both directions, the junction is

shorted. If an OL indication is obtained in both direction, junction is open. Perform
the tests of table 1.1 for silicon and germanium diodes.

Table 1.1

Test Si Ge

Forward
Reverse

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 Helwan university
Faculty of engineering
Electronics and Communication Department

Part 2. Forward-bias Diode Characteristics

In this part of the experiment we will obtain sufficient data to plot the forward-bias
characteristics of the silicon and germanium diodes on Fig 1.4
a) Construct the network of fig 1.3 with the supply (E) set at 0 V . record the
measured value of the resistor.

b) Increase the supply voltage E until 𝑉𝑅 (not E) reads 0.1 V. Then measure
𝑉𝐷 and insert its voltage in Table1.3. Calculate the value of the corresponding
current 𝐼𝐷 using the equation shown in Table 1.3

TABLE 1.3
𝑽𝑫 versus 𝑰𝑫 for silicon diode
𝑽𝑹 (V) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
𝑽𝑫 (𝑽)
𝓥𝑹
𝑰𝑫 = (mA)
𝑹𝒎𝒆𝒂𝒔

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Faculty of engineering
Electronics and Communication Department

𝑽𝑹 (V) 0.9 1 2 3 4 5 6 7 10
𝑽𝑫 (𝑽)
𝓥𝑹
𝑰𝑫 = (mA)
𝑹𝒎𝒆𝒂𝒔

c) Replace the silicon diode by a germanium diode and complete table1.4

d) TABLE 1.3
e) 𝑽𝑫 versus 𝑰𝑫 for germanium diode
𝑽𝑹 (V) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
𝑽𝑫 (𝑽)
𝓥𝑹
𝑰𝑫 = (mA)
𝑹𝒎𝒆𝒂𝒔

𝑽𝑹 (V) 0.9 1 2 3 4 5 6 7 10
𝑽𝑫 (𝑽)
𝓥𝑹
𝑰𝑫 = (mA)
𝑹𝒎𝒆𝒂𝒔

d) On fig 1.4, plot 𝐼𝐷 versus 𝑉𝐷 for the silicon and germanium diodes.
Complete the curves by extending the lower region of each curve to the
intersection of axis at 𝑰𝑫 = 0 mA and 𝑽𝑫 = 0 𝑉. lable each curve and clearly
indicate data points.

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Helwan university
Faculty of engineering
Electronics and Communication Department

Part 3. Reverse Bias

a) In fig.1.5 a reverse-bias condition has been estabiished. Since the
reverse saturation will be relatively small. a large resistance of 1 MΩ is
required if the voltage across R is to be of measureable amplitude.
Construct the circuit of fig.1.5 and record the measured value of R on
the diagram.

b) Measure the voltage 𝑽𝑹 . Calculate the reverse saturation current from

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Faculty of engineering
Electronics and Communication Department

𝑰𝒔 = 𝑽𝑹 / (𝑹𝒎𝒆𝒂𝒔 // 𝑹𝒎 ). The internal resistance 𝑹𝒎 of the DMM is

included because of the large mangnitude of the resistance R. your
instructer will provide the internals resistance of DMM for your
calculations. If unavailable, use a typical value of 10 MΩ.

𝑅𝑚 = ___________
𝑉𝑅 =____________
𝐼𝑠 =____________

c) Repeat Part3(b) for the germanium diode.

𝑉𝑅 =____________
𝐼𝑠 =____________

d) Determine the DC resistance levels for the silicon diodes using the
equation
𝒱 𝒱 𝐸− 𝒱𝐵
𝑅𝑚 = 𝒟 = 𝒟 =
𝐼𝒟 𝐼𝑆 𝐼𝑆

𝑅𝐷𝐶 (𝑐𝑎𝑙𝑐𝑢𝑙𝑎𝑡𝑒𝑑) (𝑆𝑖) = ____________

𝑅𝐷𝐶 (𝑐𝑎𝑙𝑐𝑢𝑙𝑎𝑡𝑒𝑑) (𝑆𝑖) = ____________

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Helwan university
Faculty of engineering
Electronics and Communication Department

Part 4. Forward-bias Series Diodes

Determine the current Id. 𝑉0 , 𝐼𝑅 for the network of Fig. 1.6.

𝑉0 = ………… , 𝐼𝑑 =…………. , and 𝐼𝑅 = ………….

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Helwan university
Faculty of engineering
Electronics and Communication Department

Part 5. Series Si-Si Diode Configuration

Determine the current 𝐼𝐷 , 𝑉𝐷2 , 𝑉0 for the network of Fig. 1.7.

𝑉𝐷2 = ………… , 𝐼𝑑 =…………. , and 𝑉0 = ………….

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 Helwan university
Faculty of engineering
Electronics and Communication Department

Academic year : 1𝑠𝑡 First term:2022/2023

Electronics devices lab

Name:
Section:
Grade:
Date:

Experiment 2
Half-Wave and Full Rectification

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Helwan university
Faculty of engineering
Electronics and Communication Department

Objective
To calculate, compare, draw, and measure the DC output voltages
of half-wave and full-wave rectifier circuits.

Tools and Equipment Required

DMM (Digital Multi Meter)
DC Power Supply
Function Generator
Oscilloscope
2.2 MΩ ×3
Silicon Diode ×4

Procedures
PART 1. Threshold Voltage
Choose one of the four silicon diodes and determine the threshold voltage, 𝑽𝑻 ,
using the diode-checking capability of the DMM.

𝑽𝑻 = _________________

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Helwan university
Faculty of engineering
Electronics and Communication Department

Part 2. Half-Wave Rectification

a) Construct the circuit of Fig.2.2 using the chosen diode of Part 1. Record the
measured value of the resistance R. set the function generator to 1000 Hz,
𝟖 𝑽𝒑−𝒑 sinusoidal voltage using the oscilloscope.

b) The sinusoidal input of fig.2.2 has been plotted on the screen of fig.2.3.

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Helwan university
Faculty of engineering
Electronics and Communication Department

c) Using the threshold voltage 𝑽𝑻 of Part 1, determine the theoretical output

voltage 𝒗𝑶 for the circuit of fig.2.2 and sketch the waveform on fig.2.3 for
one full cycle using the same sensitivities employed in Part 2(b). Indicate
maximum and minimum values.

d) Using the oscilloscope with the DC position, obtain the voltage 𝒗𝑶 and
sketch the waveform on fig.2.4. Before viewing 𝒗𝑶 be sure to set the
𝒗𝑶 = 𝟎 𝑽 line using the GND position of the coupling switch.

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Helwan university
Faculty of engineering
Electronics and Communication Department

Part 5. Full-Wave Rectification

a) Construct the full-wave bridge rectifier of fig.2.12. Be sure that the diodes
are inserted correctly and that grounding is as shown.

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Helwan university
Faculty of engineering
Electronics and Communication Department

𝑽𝒓𝒎𝒔 (𝒎𝒆𝒂𝒔𝒖𝒓𝒆𝒅) = _________________

b) Using the 𝑽𝑻 of Part 1 for each diode, sketch the expected output waveform
𝒗𝑶 on fig.2.14.

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 Helwan university
Faculty of engineering
Electronics and Communication Department

Academic year : 1𝑠𝑡 First term:2022/2023

Electronics devices lab

Name:
Section:
Grade:
Date:

Experiment 3
Clipping and Clamping Circuits

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Helwan university
Faculty of engineering
Electronics and Communication Department

Objective:
To calculate, compare, draw, and measure the output voltages of
clipping and clamping circuits.

Tools and equipments required:

• DMM (digital multi meter)
• DC power supply
• Function generator
• Oscilloscope
• 1 uF x1
• 2.2 𝐾Ω x1
• 1 𝐾Ω x1
• Germanium diode x1
• Silicon diode x1

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Helwan university
Faculty of engineering
Electronics and Communication Department

Procedures
Part one: clipping circuit
a) Record the measured value of resistance value of R and construct the circuit
of fig 3.1. note that the input voltage is 8 𝑉𝑃−𝑃 square wave at frequency of
1000 hz. (here E=1.5V DC supply)

b) Using the measured values of 𝑉𝑇 E, and R , calculate the output voltage .

𝑉𝑂 (𝑐𝑎𝑙𝑐𝑢𝑙𝑎𝑡𝑒𝑑)=

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Helwan university
Faculty of engineering
Electronics and Communication Department

c) Sketch the expected waveform for 𝑉𝑂 .

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Helwan university
Faculty of engineering
Electronics and Communication Department

d) Reverse the DC supply E and calculate the output voltage.

𝑉𝑂 (𝑐𝑎𝑙𝑐𝑢𝑙𝑎𝑡𝑒𝑑)=

e) Sketch the expected waveform for 𝑉𝑂 .

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Helwan university
Faculty of engineering
Electronics and Communication Department

Part two: clamping circuit

Construct the circuit of fig 4.1 and change the input signal to 8 𝑉𝑃−𝑃 square wave
at frequency of 1 KHz.

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Helwan university
Faculty of engineering
Electronics and Communication Department

a) Sketch the observed waveform from oscilloscope

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Helwan university
Faculty of engineering
Electronics and Communication Department

b) Reverse the diode and sketch the observed waveform again.

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 Helwan university
Faculty of engineering
Electronics and Communication Department

Academic year : 1𝑠𝑡 First term:2022/2023

Electronics devices lab

Name:
Section:
Grade:
Date:

Experiment 4
Light-Emitting and Zener Diodes

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Helwan university
Faculty of engineering
Electronics and Communication Department

Objective:
To calculate, draw, and measure the currents and voltages of light-
emitting diode (LEDs) and Zener Diodes.

Tools and equipments required:

• DMM (digital multi meter)
• DC power supply
• Function generator
• Oscilloscope
• 1 uF x1
• 220 Ω x1
• 100 Ω or 120 Ω x1
• Germanium diode x1
• Silicon diode x1

Procedures
Part 1: Diode characteristics
a) Record the measured value of resistor R and construct the circuit in fig.4.1.
Initially, set the supply voltage to 0V.

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Helwan university
Faculty of engineering
Electronics and Communication Department

R(measured)= ______________________

b) Increase the supply voltage E until “first light” is noticed. Record the VD and
VR using DMM. Calculate ID using ID = VR / R.

c) Continue to increase the supply voltage E until “good brightness” is first

established.
DO NOT OVERLOAD the circuit. Record the VD and VR using DMM. Calculate
ID using ID = VR /R.

d) Set DC supply E to corresponding values on the table 4.1 and measure the
values VD and VR and calculate the current ID and fill the table.

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Helwan university
Faculty of engineering
Electronics and Communication Department

Table 4.1
E(V) 0 1 2 3 4 5
VD(V)
VR(V)
ID = VR/R
(mA)

e) Using the table 4.1 sketch the curve ID vs. VD on the graph fig.4.2. Point the
ID and VD of “good brightness” from the part 1.(c) and draw a vertical line
from the intersection point . Area on right of lines is “good brightness”.

Figure 4.2

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Helwan university
Faculty of engineering
Electronics and Communication Department

f) Record the measured value of resistance and construct the circuit of fig.4.3.
be sure that both diodes are connected properly.
R(measured)= ________________

Figure 4.3
g) Do you expect the LED to burn brightly? Why? What if the silicon diode is
reversed?

h) Energize the circuit for both conditions of silicon diode. (as shown in fig.4.3
and reversed). If the LED is “on” with “good brightness”, measure VD and VR
and calculate ID. Compare with the area “good brightness” on graph of
fig.4.2.

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Helwan university
Faculty of engineering
Electronics and Communication Department

Part 2: Zener Diode Characteristics:

a) Record the measured value of resistance R. Construct the circuit of
fig.4.4. Initially set DC supply to 0V.

Figure 4.4
R(measured)= ________________________
b) Set the DC supply E to the values on table 4.2 and measure both VZ and
VR. Calculate the Zener current IZ in mA.

Table 4.2

E(V) 0 1 2 3 4 5 6 7 8
VZ(V)
VR(V)
IZ = VR/R
(mA)

c) Since the Zener region is I the third quadrant of a complete diode

characteristic curve, place a minus sign in front of each IZ and VZ value.
Plot the curve IZ vs. VZ

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Helwan university
Faculty of engineering
Electronics and Communication Department

Figure 4.5
d) For the measurable current IZ in the linear region, what is the average
value of VZ? Estimate the average resistance of Zener diode in the linear
region using ravg =ΔVZ/ΔIZ. Choose an interval for ΔVZ at least 2V.

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Helwan university
Faculty of engineering
Electronics and Communication Department

VZ(approximated) = ___________________
RZ(calculated) = _____________________

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 Helwan university
Faculty of engineering
Electronics and Communication Department

Academic year : 1𝑠𝑡 First term:2022/2023

Electronics devices lab

Name:
Section:
Grade:
Date:

Experiment 5
A bipolar junction transistor (BJT)

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Helwan university
Faculty of engineering
Electronics and Communication Department

Objectives:
1- To determine transistor type (npn, pnp ),terminal and material.
2- Measure and graph the collector characteristics curves for a
bipolar junction transistor.
3- Use the characteristic curves to determine the βDC of the transistor
at a given point.

Tools and equipments required:

• DMM (digital multi meter)
• DC power supply
• Function generator
• Oscilloscope
• 5 K pot. x1
• 100 M pot. x1
• 1 𝐾Ω x1
• 220 𝐾Ω x1
• 2N2222 x2

32
Helwan university
Faculty of engineering
Electronics and Communication Department

Procedures
Part one:

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Faculty of engineering
Electronics and Communication Department

f) 1. Connect the 2N222 (NPN) as shown in Fig. 1., Let VCC = 15V.
g) Set the voltage VRB= 2.2 V BY varying 1M Potentiometer. this set make IB= V
RB /RB =10 µA .

h) Then set vCE =2 V by 5 k potentiometer and record VRC , VBE

i) Varying 5k to increase vCE from 2 v to valueQ in the table
j) For each value of v CE measure and record VRC , VBE use mv scale for VBE
k) Repeat part (b) through (f) for all values of VRB
l) Use all data of the table to plot IC verses vCE for various value of IB
V RB= I B= V CE= V RC= I C= V BC= I E= α= Β=
2.2 10 2
2.2 10 4
2.2 10 6
2.2 10 8
6.6 30 2
6.6 30 4
6.6 30 6
6.6 30 8
9.9 45 2
9.9 45 4
9.9 45 6
9.9 45 8

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Helwan university
Faculty of engineering
Electronics and Communication Department

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