UNIT - I - SEMICONDUCTOR DIODES AND SPECIAL PURPOSE DIODES

S.No QUESTIONS A

1 Flow of electrons is generally termed as __. Electric current

A ___is a material which offers very little

2 resistance to theflow of current through it. good conductor

3 A silicon diode measures a low value of resistance with the meter leads in both positions. The trouble, if any, is the diode is open.

4 The materialswhich behave like perfect insulators at low temperatures & athigher temperatures, they behave like a good conductorsgood
are termed
conductor
as ___.

Under normal conditions a diode conducts

5 current
The when it of
movement is free electrons in a reverse-biased.
6 conductor is called voltage.
7 An n-type
The semiconductor
boundary material
between p-type material and is intrinsic.
8 n-type material is called a diode.
9 You have an unknown type of diode in a circuit. You measure the voltage across it and find it to be 0.3 V. The diode might be a silicon diode.


10 What type of impurities are to be added to form a P type semiconductors ? Trivalent

11 Dopingoccurs
What of a semiconductor material means
when a conduction-band that a glue-type sub
12 electron loses energy and falls back into a hole in the valence band? doping
the value of ac
13 The term bias in electronics usually means voltage in the signal.
14 How many valence electrons does a silicon atom have? 1
15 Which capacitance dominates in the forward-bias region? Diffusion
16 What is the Cut in volatage of Silicon diode? 0.5V
17 Germanium Knee Volage is 0.3V
18 Intrinsic Semiconductor means Pure Semicionducto
19 Under normal conditions a diode conducts current when it is reverse-biased
20 Reverse breakdown is a condition in which a diode is subjected to a lar
21 Therediodes
Since is a small
areamount of current
destroyed acrosscurrent,
by excessive the barrier of a reverse-biased diode. This current is called forward-bias curren
22 circuits must have: higher
due to voltage
current sourc
passing
23 Why is heat produced in a diode? through the diode
24 The diode schematic arrow points to the: trivalent-doped mate
25 The voltage where current may start to flow in areverse-biased pn junction is called the breakdown voltage
26 The area at the junction of p-type and n-type materials that has lost its majority carriersis called the barrier potential

27 DC power should be connected to forward bias a diode as follows: – anode, + cathode

28 A diode for which you can change the reverse bias, and thus vary the capacitance is called a varactor diode
29 Avalanche breakdown results basically due to impact ionisation
30 The varactor diode is usually Forward biased
31 The diode in which impurities are heavily doped is Varactor diode
32 The depletion region in a Junction Diode contains only charge carriers
33 Varactor diodes are used in FM receivers to obtain: Automatic frequency
34 As the forward current through a silicon diode increases, the internal resistance increases.
is subjected to a
35 Reverse breakdown is a condition in which a diode large reverse voltage.


36 There isis the

What a small
stateamount of current
of an ideal diode inacross the barrier of a reverse-biased diode. This current is called forward-bias current
37 the region of nonconduction? An open circuit
38 Schottky diodes are also known as PIN diodes.

39 zener breakdown refers to Reverse bias region

40 What kind of diode is formed by joining a doped semiconductor region with a metal? laser
41 An intrinsic semiconductor at the absolute zero temperature behaves like a metal
 the p-type material is
42 A pn junction allows current flow when more positive than the n-type material
43 The forward characteristics curve of a diode grows in _____ form. linear
44 The reverse-saturation current level is typically measured in pA
45 Varying the _____ can control the location of the Zener region. forward current
46 The _____ the current through a diode, the _____ the dc resistance level. higher, lower
47 The reverse-bias current _____ with the increase of temperature. decreases
48 What is the resistor value of an ideal diode in the region of conduction? 0
49 Diodes are connected _____ to increase the current-carrying capacity in series
50 A Zener diode: Has a high forward v
51 Avalanche breakdown in semiconductor diode occurs when Reverse bias exceeds
52 The varactor diode is usually Forward biased
53 Zener diodes are: Specially doped p–n junctions
54 The capacitance of a varactor diode increases when the reverse voltage across it Decreases
55 The diode with a forward voltage drop of approximately 0.25 V is the Step-recovery diode
56 Since diodes are destroyed by excessive current, circuits must have: current limiting resi
57 Drift current is influenced by magnitude of voltag
58 What type of diode is commonly used in electronic tuners in TVs? varactor
59 Which diode employs graded doping? zener
60 A PNPN diode is a negative resistence
UNIT -II -BIPOLAR TRANSISTORS
S.No When
QUESTIONS
transistors are used in A
1 Adigital circuits
transistor hasthey
a ofusually
250 operate in the active region
2A and a baseratio
current current, IB, of
of IC/IE 20 A. The collector current, IC, equals:
is usually 500 A
3 Inless than one and is called:
a C-E configuration, an emitter beta
4 Toresistor
operateis used for: transistor's
properly,a stabilization
5 base-emitter junction must be forward biased with reverse bias applied to which junction? collector-emitter
the C-B configuration is used to
6 Aprovide which
transistor maytype of gain?
be used as a voltage
7 switching device or as a:
If an input signal ranges from fixed resistor
8 20–40 A (microamps), with an output signal ranging from .5–1.5 mA (milliamps), what is the ac beta? 0.05
9 Which is beta's current ratio? IC/IB
10 A collector
With characteristic
low-power transistorcurve is a graph showing: emitter current (IE) versus collector-emi
11 packages,
When the base
a silicon diodeterminal is usually the:
is forward tab end
voltage-divider
12 biased, what is VBE for a C-E configuration? bias
13 WhataisPNP
With the circuit,
currentthegainmost
for a common-base configuration where IE = 4.2 mA and IC = 4.0 mA? 16.8
14 positive voltage is probably: ground
15 If a 2 mV signal produces a 2 V output, what is the voltage gain? 0.001
16 The term BJT is short for base junction
out of the transistor
17 Most of the electrons in the base of an NPN transistor flow: base lead
18 In a transistor, collector current is controlled by: collector voltage
19 Total emitter current is: IE – IC voltage
provide
20 Often a common-collector will be the last stage before the load; the main function(s) of this stage is to: gain
21 For a C-C configuration to operate properly, the collector-base junction should be reverse biased, while forward bias should be appl collector-emitter
22 Thesaturation
At input/output relationship
the value of VCE of
is the common-collector and common-base amplifiers is: 270 degrees
23 nearly
In which________,
operationand IC = ________.
region(s) does the Ebers-Moll zero, zero
24 model describe a bipolar transistor?
25 Transistor
The part ofact
theastransistor
a? which is heavily doped conductor
26 to produce large number of majority carriers is emitter
27 A BJT is a ________-controlled device. current
28 In a transistor
The principal advantage(s) of BJTs over MOSFETs is β = α/ (α
voltage +1) across the
drop
29 (are) that transistor is important.
30 What is the ratio of IC to IB? DC
31 For normal operation of a pnp BJT, the base must be ________ with respect to the emitter and ________ with respect to the collect positive, negative
32 The term BJT is short for base junction transi
33 For a silicon transistor, when a base-emitter junction is forward-biased, it has a nominal voltage drop of 0.7 V.
34 What are the two types of bipolar junction transistors? npn and pnp
35 What is the order of doping, from heavily to lightly doped, for each region? base, collector, emit
36 in what range of voltages is the transistor in the linear region of its operation? 0 < VCE
37 What is (are) common fault(s) in a BJT-based circuit? opens or shorts inter
38 The dc load line on a family of collector characteristic curves of a transistor shows the saturation region.
39 How many layers of material does a transistor have? 1
40 In which region are both the collector-base and base-emitter junctions forward-biased? Active
41 Which of the following is (are) the terminal(s) of a transistor? Emitter
42 Transistors are ________-terminal devices. 2
43 How many carriers participate in the injection process of a unipolar device? 1
44 In what decade was the first transistor created? 1930s
45 Which component of the collector current IC is called the leakage current? Majority
46 Clipping is the result of the input signal bein
 47 In a NPN transistors Collector is Heavily doped
48 In a NPN transistors emitter is Heavily doped
49 In a NPN transistors base is Heavily doped
50 When a transistor is used as a switch, it is stable in which two distinct regions? saturation and activ
51 At which of the following condition(s) is the depletion region uniform? No bias
52 Clipping is the result of the input signal bein
53 alpha refers to Ic/Ib
54 Beta refers to Ic/Ib
55 gamma refers to 1+alfha
56 In a transistor, collector current is controlled by: collector voltage
57 How much is the base-to-emitter voltage of a transistor in the "on" state? 0V

58 Which of the following equipment can check the condition of a transistor? Current tracer
59 For what kind of amplifications can the active region of the common-emitter configuration be used? Voltage
60 A transistor can be checked using a(n) ________. curve tracer

UNIT -III - FIELD EFFECT TRANSISTORS

S.No QUESTIONS A
1 When
JunctionanField
inputEffect
deltaTransistors (JFET)contain
of 2 V produces a how many diodes? 4
transconductance
2 When of 1.5 mS,
not in use, MOSFET pinswhat
are is the drain current delta? 666 mA
3 kept at the same potential through the use of: shipping foil
4 D-MOSFETs are sometimes used in series to construct a cascode high-frequency amplifier to overcome the loss of: low output impedan
5 A "U" shaped, opposite-polarity material built near a JFET-channel center is called the: gate
6 In the constant-current region, how will the IDS change in an n-channel JFET? AsVGS decreases ID decreases.
7 A MOSFET has how many terminals? 2 or 3
8 IDSS can be defined as: the minimum possibl
9 With
JFET terminal "legs" are
the E-MOSFET, whenconnections
gate inputto the drain, the gate, and the: channel
10 voltage is zero, drain current is: at saturation
11 With a 30-volt VDD, and an 8-kilohm drain resistor, what is the E-MOSFET Q point voltage, with ID = 3 mA? 6V
When an input signal reduces the
12 channel size, the process is called: enhancement
from source to
13 How will electrons flow through a p-channel JFET? drain
14 When VGS = 0 V, a JFET is: saturated
15 When applied input voltage varies the resistance of a channel, the result is called: saturization
for high
16 When is a vertical channel E-MOSFET used? frequencies
breakdown
17 When the JFET is no longer able to control the current, this point is called the: region
18 With a JFET, a ratio of output current change against an input voltage change is called: transconductance
19 Which type of JFET bias requires a negative supply voltage? feedback
20 How will a D-MOSFET input impedance change with signal frequency? As frequency increa
21 The transconductance curve of a JFET is a graph of: IS versus VDS
22 What is the transconductance of an FET when ID = 1 mA and VGS = 1 V? 1 kS
23 Which component is considered to be an "OFF" device? transistor
24 In an n-channel JFET, what will happen at the pinch-off voltage? the value of VDS at which further increa
25 Use the following equation to calculate gm for a JFET having IDSS = 10 mA, VP = –5 V, and VGSQ = –2.5 V. 2 mS
26 For what value of ID is gm equal to 0.5 gm0? 0 mA
27 Where do you get the level of gm and rd for an FET transistor? from the dc biasing
28 The class D amplifier uses what type of transistors? JFETs
29 What is (are) the function(s) of the coupling capacitors C1 and C2 in an FET circuit? to create an open cir
30 What is the typical value for the input impedance Zi for JFETs? 100 k
31 MOSFETs make better power switches than BJTs because they have lower turn-off times
32 Junction field effect transistors (JFET) contain how many diodes? 1
33 MOSFET digital switching is used to produce which digital gates? inverters
34 Which FET amplifier(s) has (have) a phase inversion between input and output signals? common-gate

35 Pinch-off voltage in a JFET is the drain voltage that gives

36 MOSFET can be used as a Current controlled capac
37 What limits the signal amplitude in an analog MOSFET switch? the switch input cap
38 Input resistance of a common- drain amplifier is RG || RIN(gate).
39 E-MOSFETs are generally used in switching applications because of their very low in
40 For an FET small-signal amplifier, one could go about troubleshooting a circuit by ________. viewing the circuit b
41 The E-MOSFET is quite popular in ________ applications. digital circuitry
42 Material used for design of MESFET is Gallium arsenide (Ga
43 Secondary breakdown occurs in MOSFET but not in B
44 CMOS is widely used in Digital wrist wat
 45 In the transfer characteristics of a MOSFET, the threshold voltage is the measure of the minimum
Plate of a voltage to
46 The drain of a JFET is the analog of the vacuum
less thantube
of FET but
47 Input impedance of MOSFET is more than BJT.
48 MOSFET
In MOSFET uses the electric
devices field of type is
the N-channel gate
it hascapacitance
better noiseto control the channel
49 better the P-channel type in the following respects immunity.
charge on the gate
50 In a MOSFET,
Which the polarity
of the following of the inversion
is expected to havelayer is the same as that of the electrode
51 highest input impedance? MOSFET.
52 Mostissmall
JFET - signal
similar E - MOSFETs are found in
to that heavy - current appl
53 of fabrication
Which of layer used in Fabrication
insulating Diode fabrication
54 of MOSFET?
What is used to higher the speed of Aluminium oxide
55 operation in MOSFET fabrication? Ceramic gate
56 A power MOSFET has three terminals called Collector, emitter a
57 MESFET can be operated on Enhancement mode (
58 The arrow on the symbol of MOSFET indicates that it is a N-chann
59 The operation of CCD is captures light and conve
60 In the constant-current region, how will the IDS change in an n-channel JFET? AsVGS decreases ID decreases

UNIT IV- DC POWER SUPPLY

S.No QUESTIONS A
1 Which rectifier requires four diodes? Half-wave voltage d
2 Larger the value of the capacitor filter: Smaller the dc volta
3 The most significant component of ripple voltage in a half-wave rectifier is contained in: Fundamental freque
4 For a low voltage rectification: Two diode full-wave r
5 The peak inverse voltage (PIV) across a nonconducting diode in a bridge rectifier equals approximately: twice the peak secondary voltage
6 Voltage regulation requires only line regulation.
7 What type of regulator offers inherent short-circuit protection? shunt regulators
8 The output of a rectifier is: 60-Hz ac.
9 An advantage of full-wave bridge rectification is: It uses the whole tr
10 In. a supply designed to provide high power at low voltage, the best rectifier design would probably be: Half-wave.
11 The part of a power supply immediately preceding the regulator is: The transformer.
12 The ripple frequency from a full-wave rectifier is: Twice that from a ha
13 Voltage regulation can be accomplished by a Zener diode connected in: Parallel with the fil
14 A current surge takes place when a power supply is first turned on because: The transformer cor
15 In a series linear regulator, the control element is a(n) _____ in series with the load. inductor
16 In a series regulator, what is the purpose of fold-back limiting? to provide more curre
17 In a shunt linear regulator, the control element is a(n) _____ in parallel with the load. inductor
18 Switching regulator efficiencies can be greater than _____ percent. 60
19 Bleeder resistors are: Connected in parallel
20 The selection a rectifier diode depends mostly on Fault current.
21 The function of centre tapping on the secondary in a full wave rectifier is to Isolate the load fr
22 Capacitor filtor ideal for currents which are Large.
23 The function of filter in a rectifier is to Limit the DC current
24 A capacitor filter at the output of a rectifier result is ripple which Remain unaltered wi
25 The disadvantage of half wave diode rectifier circuit is that the Diode must have high
26 The maximum efficiency of full wave rectifier is 40%.
27 Bridge rectifires are preferred because They have low rippl
28 Peak inverse voltage (PIV) can be termed as Reverse saturation
29 A zener diode is used as a____voltage regulating device. shunt
30 If the load resistance decreases in a zener regulator, then zener current .... decreases
31 The output impedance of a voltage regulator is Very small
32 A series regulator is an example of a Linear regulator
33 An increase of line voltage into a power supply usually produces A decrease in load r
34 A power supply with low output impedance has low Load regulation
35 The input current to a shunt regulator is Variable
36 An advantage of shunt regulation is Built-in short-circui
37 The efficiency of a voltage regulator is high when Input power is low
38 A shunt regulator is inefficient because It wastes power
39 A switching regulator is considered Quiet
40 A series regulator is more efficient than a shunt regulator because It has a series resis
41 The regulator with the highest efficiency is the Shunt regulator

42 In a switching regulator, the control transistor is conducting part of the time

43 The main purpose of current limiting in a regulator is protection of the re
44 The form factor for half wave rectified sine wave is 1
45 The ripple factor for half wave rectified is 1
46 The ripple factor for bridge rectified is 0.5
47 The maximum efficiency of half wave rectifier is 0.406
48 The ripple factor of power supply is measure of its filter efficiency
49 What is the purpose of a filter in the power supply? To convert the puls
50 In which period is the capacitor filter charged in a full-wave rectifier? The time during the
51 Switching regulators are series type regulators, which has ______ power dissipation & ______ efficiency. increased, increased
52 The % load regulation of a power supply should be ideally ________ & practically _______. zero, small
53 Which performance parameter of a regulator is defined as the change in regulated load voltage due to variation in line voltage in a specified
Load regulation
range at a constant load current
54 Which among the following factors affect/s the output voltage of a regulated power supply? Load current
55 With foldback current limiting, the load voltage approaches zero, and the load current approaches A small value
56 A capacitor may be needed in a discrete voltage regulator to prevent Negative feedback
57 Compared to the ripple into a voltage regulator, the ripple out of a voltage regulator is Equal in value
58 The efficiency of a voltage regulator is high when Input power is low
59 Voltage regulators normally use Negative feedback
60 Simple current limiting produces too much heat in the Zener diode

UNIT-V INTEGRATED
When does CIRCUIT
an integrated FABRICATION
circuit exhibit greater In thin and thick film
1 degree of freedom and electrical
Give the thickness range of the film performance?
used in technology
2 thin film technology
Which technology is used to get cheap 0.5-2.5 mils
3 resistors
Which ofandthe capacitors?
following process is involve in Thick film technolog
4 thick film technology
An ancient process used till today for Screen printing
5 production of circuit films is, Silk Screening technique
6 Metal can IC packages are available in 42 leads
7 In which
Which method
method is shallow penetration
most suitable of dopants is possible?
for silicon Ion implantation
8 crystal growth in silicon wafer preparation? Float zone process
Which isolation technique is used in
9 applications like military and aeroscope? Thin film isolation
10 CMOS devices use bipolar transistors
11 The main advantage of CMOS is its high power rating.
12 The integrated circuit was invented at Texas instrument in 1958 by Jonathan Kurtz
13 Which component cannot be fabricated into ICs? Diode
14 What process is used to produce IC semiconductor elements? Alloy junction
15 Which integrated circuit is having more than 1000 gates? Small-scale integrati
16 Which integrated circuit is having more that 100 gates? Small-scale integrat
17 Integrated circuits having up to 9 gates is called Small-scale integrat
18 Dual-in-line pick up (DIP) is the most popular IC package because It is low in cost
19 After assembly, the ICs are tested and classified as either Military
20 ICs for military and space applications are tested in the temperature range of 0ºC to +70 ºC
21 Which integrated circuit is having 10 to 100 gates? Small-scale integrati
22 ICs have advantages over discrete device circuits which is Lower cost
23 For most commercial and industrial operations, ICs are tested in the temperature range of 0ºC to +70 ºC
24 A mass of metal attached to the case of a transistor to allow the heat to escape more easily. Flag
25 Which of the following IC processes digital signals? Digital IC
26 Which of the following IC processes analog signals? Digital IC
27 Monolithic IC consists of: Active components
28 Oxidation is used for: Isolation
29 Metallization is used for: Interconnection
30
31 Testing is used for: Checking reliability
32
33 Packaging is used for: Protection
34
35 Etching is used for: Selective removal o
36 Most linear ICs are low-power devices with power dissipation ratings of 5W
37 Monolithic ICs are Forms of discrete cir
38 Which insulating layer used in Fabrication of MOSFET? Aluminium oxide
39 JFET is similar to that of fabrication of Diode fabrication
40 What is used to higher the speed of operation in MOSFET fabrication? Ceramic gate
41 Why MOSFET is preferred over BJT in IC components? MOSFET has low pac
42 What type of packing is suitable for Integrated Circuits? Metal can package
43 What process is used in semiconductor industry to fabricate Integrated Circuits? Silicon wafer prepar
44 Which semiconductor is most widely used for fabrication of Integrated Circuit? Germanium, Ge
45 We use ................. ICs in computers. digital
46 Which of the following is most difficult to fabricate in an IC ? diode
47 The active components in an IC are ............. resistors
48 Digital ICs process .............. linear signals only
49 The SiO2 layer in an IC acts as ........... a resistor
50 ............. ICs are the most commonly used. thin film
51 Operational amplifiers use ................. linear ICs
52 Almost all resistors are made in a monolithic IC during the emitter d
53 Which logic family combines the advantages of CMOS and TTL? BiCMOS
54 PMOS and NMOS circuits are used largely in ________. MSI functions
55 Which property of MOS ICs make it applicable in LSI , VLSI and ULSI circuits ? High packing densit
56 Ultra Large Scale Integration are used in fabrication of 8-bit microprocess
57 A technique used to reduce the magnitude of threshold voltage of MOSFET? Use of complement
58 Determine the chip area for Large Scale Integration ICs. 1,00,000 mil2
59 What type of integration is chosen to fabricate Integrated Circuits like Counters, multiplexers and Adders? Small Scale Integrati
60 How many gates per chip are used in first generation Integrated Circuits? 3 - 30 gates
B C D ANSWER

none of the
electric shock semiconductor above Electric current

none of the
insulator semiconductor above good conductor

the diode is internallythe diode is working the diode is internally

the diode is shorted t shorted. correctly. shorted.

none of the
insulator semiconductor above semiconductor

forward-biased. avalanched. saturated. forward-biased.

current. recombination.
has trivalent impurity has equilibrium.
pentavalent impurity current.
has pentavalent impurity
atoms added. atoms added. requires no doping.
a forward-biased atoms added.
a reverse-biased diodeaa forward-biased
pn junction. diode. a pn junction.
a reverse-biased germanium
a germanium diode. silicon diode. diode. a germanium diode.


Pentavalent
that impurities are Octavalent Divalent Trivalent
that impurities
added to increase the resistance of theare a that all impurities a that impurities are added to decrease the resistance of the material.
material.
recombination
current through a generation combination
the status of the recombination
pn junction. the value of dc voltag diode. the value of dc voltages for the device to operate properly.
2 3 4 4
Transition Depletion None of the above Diffusion
0.6V 0.7V 0.3V 0.7V
0.4V 0.5V None of these 0.3V
Impure Semiconducto Non doped Conducto Both A & C Both A & C
forward-biased avalanched saturated forward-biased
is reverse-biased and thas no current flowingis heated up by larg is subjected to a large reverse voltage
reverse breakdown cu conventional current reverse leakage curr reverse leakage current
higher current
current limitingacross
due to voltage resistomore
due todopants
the power sources
due to the PN current limitingpassing
due to current resistors
the diode rating of the diode junction of the diodethrough the diode
positive axial lead anode lead cathode lead cathode lead
barrier potential forward voltage biasing voltage breakdown voltage
depletion region n region p region depletion region

– cathode, – anode + anode, – cathode + cathode, + anode + anode, – cathode

tunnel diode zener diode switching diode varactor diode

strong electric field ac emission of electrons rise in temperature impact ionisation
reverse biased Unbiased holes and electronic reverse biased
PIN diode Tunnel diode Zener diode Tunnel diode
no charge at all vacuum, and
Automatic no atomsonly ions i.e., immobonly ions i.e., immobile charges
volume
Automatic gain contro control None of the
increases & above Automatic frequency control
decreases. remains the same. decreases decreases.
is subjected to a
is reverse-biased and thas no current flowingis heated up by larg large reverse voltage.

reverse breakdown conventional reverse leakage reverse leakage

current. current. current. current.
A short circuit Unpredictable Undefined An open circuit
hot carrier diodes. step-recovery diodes.tunnel diodes. hot carrier diodes.

Forward bias region no bias depletion region Reverse bias region

tunnel pin Schottky Schottky
behaves like an insula has a large number ofhas a large number obehaves like an insulator
the n-type material is both the n-type and there is no the p-type material is
more positive than thep-type
p-typematerials
material have potential
the same on potential
the n-type
more orpositive
p-type materials
than the n-type material
exponential logarithmic sinusoidal exponential
µA mA A µA
doping levels forward voltage dc resistance doping levels
lower, lower lower, higher higher, higher lower, higher
increases remains the same None of the above increases
5k Undefined Infinity 0
in parallel-series in parallel-series in parallel in parallel
Is useful as an amplifieHas a sharp breakdowNone of the above Has a sharp breakdown at low reverse voltage
Forward bias exceeds aForward current exceethe potential barrierReverse bias exceeds a certain value
Reverse biased un biased in the breakdown re Reverse biased
Normally doped p–n junctions
Lightly doped p–n junctions
None of the above Specially doped p–n junctions
Increases Breaks down Stores charges Decreases
Schottky diode Back diode Constant-current di Schottky diode
more dopants higher voltage sourcehigher current sourccurrent limiting resistors


concentration of carrieconcentration gradienforward-bias currentmagnitude of voltage

Schottky LED Gunn varactor
LED tunnel step-recovery step-recovery
voltage controllable d current controllable switching device switching device

B C
saturation and D ANSWERS
saturation and
breakdown region cutoff regions linear region cutoff regions
5 mA 50 mA 0.20833333333333 5 mA
theta alpha omega alpha
ac signal bypass collector bias higher gain stabilization
base-collector base-emitter collector-base collector-base

current resistance power voltage

tuning device rectifier variable resistor variable resistor
20 50 500 50
VCC IB/IE
collector current (IC) collector current IE/IB
collector current IC/IB
collector current (IC)
versus collector-emitter(IC)
voltage
versus
(VCE)
collector-emitter
with (VBB)
(IC) versus
base
voltage
bias
collector-emitter
voltage
(VC) with
versus
held
(VBB)
collector-emitter
constant
voltage
base bias
(VCC)
voltage
with
voltage
(VBB)
held(VCE)
constant
base with
bias voltage
(VBB) base
heldbias
constant
voltage held constant
middle right end stud mount middle
0.4 V 0.7 V emitter voltage 0.7 V
 1.05 0.2 0.95 0.95
VC VBE VCC ground
0.004 100 1000 1000
binary junction transistboth junction transistor
bipolar junction tra bipolar junction transistor
into the collector into the emitter into the base supply into the collector
base current collector resistance all of the above base current
IC + IE phase
provide IB + IC a
provide IB – IC IB + IC
inversion high-frequency path to buffer the voltage
improve buffer
the frequency the voltage amplifiers from the low-resistance load and provide impedance matching for maximum power tra
response
base-emitter collector-base cathode-anode collector-emitter
180 degrees 90 degrees 0 degrees 0 degrees
VCC, IC(sat) zero, I(sat) VCC, zero zero, I(sat)
Saturation. Cut-off. All of the above. All of the above.
semi-conductor insulator thermionic valve
any of the above thermionic valve
base collector depending upon the nature
emitterof transistor
voltage - - current
β = α/ (1- α)
they are not as α = β/ (β-1) α = (β+1)/β α = β/ (β-1)
prone to ESD. both of the above none of the above both of the above
hFE DC either DC or hFE, but either
not DC DCor hFE, but not DC
positive, positive negative, positive negative, negative negative, positive
binary junction transis both junction transistbipolar junction tranbipolar junction transistor
0.3 V. 0.2 V. VCC. 0.7 V.
pnn and nnp ppn and nnp pts and stp npn and pnp
emitter, collector, bas emitter, base, collect collector, emitter, b emitter, collector, base
0.7 < VCE < VCE(max) VCE(max) > VCE none of the above 0.7 < VCE < VCE(max)
open bias resistor(s) external opens and shall of the above all of the above
cutoff region. active region. all of the above all of the above
2 3 4 3
Cutoff Saturation All of the above Saturation
Base Collector All of the above All of the above
3 4 5 3
2 3 0 1
1940s 1950s 1960s 1940s
Independent Minority None of the above Minority
the transistor being dr the transistor being dall of the above all of the above
moderately doped lightly doped none of the these moderately doped
moderately doped lightly doped none of the these Heavily doped
moderately doped lightly doped none of the these lightly doped
active and cutoff saturation and cutoff none of the above saturation and cutoff
VDS > 0 V VDS = VP None of the above No bias
the transistor being dr the transistor being dall of the above all of the above
Ic/Ie Ie/Ic Ib/Ic Ic/Ie
Ic/Ie Ie/Ic Ib/Ic Ic/Ib
1-alpha 1/alpha 1/(1-alpha) 1+alfha
base current collector resistance all of the above base current
0.7 V 0.7 mV Undefined 0.7 V

Digital display meter Ohmmeter (VOM) All of the above All of the above
Current Power All of the above All of the above
digital meter ohmmeter Any of the above Any of the above

B C D ANSWERS
3 2 1 1
3 mA
nonconductive 0.75 mA 0.5 mA 3 mA
foam
capacitive conductive
high input foam a wrist strap conductive
high input foam
reactance impedance inductive reactance impedance
block drain heat sink gate
As VGS increases ID increases.
As VGS decreases ID remains
As VGS increases
constant. ID remains
AsVGS decreases
constant.ID decreases.
3 4 3 or 4 3 or 4
the maximum possiblethe current
maximum
with VGS
possible
heldthe
at
current
maximum
–4 V with drain
VGS held
cthe at
maximum
0V possible current with VGS held at 0 V
source substrate cathode source
zero IDSS widening the channezero
10 V 24 V 30 V 6V
substrate
connecting
from source to gate charge
from drain to depletion depletion
gate gate from drain to sourcefrom drain to source
an analog device an open switch cut off saturated
polarization cutoff field effect field effect
for high voltages for high currents for high resistances for high currents
breakdown
depletion region saturation point pinch-off region region
siemens resistivity gain transconductance
source gate voltage divider voltage divider
As frequency increasesAs frequency decreasAs frequency decreaAs frequency decreases input impedance increases.
IC versus VCE ID versus VGS ID × RDS ID versus VGS
1 mS 1k 1mΩ 1 mS
JFET D-MOSFET E-MOSFET E-MOSFET
the value of VGS at which
the further
value ofdecreases
VDG at which
the
in VGS
value
further
willofcause
VDS
decreases
at
nowhich
the
further
invalue
VDG
further
increases
of
willVDS
increases
cause
at
in which
ID
no in
further
VGS
further
will
increases
increases
cause no
in ID
further
in VDS will
increases
cause no
in ID
further increase in ID
3 mS 4 mS 5 mS 2 mS
0.25 IDSS 0.5 IDSS IDSS 0.25 IDSS
from the specification from the characterist All of the above All of the above
BJTs MOSFETs any of the above MOSFETs
to isolate the dc bias to create a short-circ All of the above All of the above
1M 10 M 1000 MΩ 1000 MΩ
lower on-state resista a positive temperaturall of the above all of the above
2 3 4 1
NOR gates NAND gates all of the above all of the above
common-drain common-source all of the above common-source

the gate to source voltthe gate to source voltage

the drain
t voltage thathe gate to source voltage that gives unity drain current.
Voltage controlled capacitor
Current controlled in Voltage controlled i Voltage controlled capacitor
VGS(th) the switch's power h VDS VGS(th)
RG + RIN(gate). RG RIN(gate). RG || RIN(gate).
of their threshold characteristic
of their high-frequencof
(VGS(th)). their power handlof their threshold characteristic (VGS(th)).
using a dc meter applying a test ac sig All of the above All of the above
high-frequency buffering All of the above All of the above
Germanium
Both MOSFET Silicon
BJT but not in Zinc arsenide Gallium arsenide
BJT but not in (GaAs)
and BJT MOSFET None of these MOSFET
analogue circuits high power circuits all of the above Digital wrist watches
 minimum voltage till minimum voltage to tu none of the above mPlateminimumof a voltage to induce a n-channel/p-channel for conduction
Emitter
more than of athat
BJT of Cathode
more thanofthat
diode
of Substrate of a of
less than that MOS vacuum
more than tubethat of
FET and BJT.
barrier potential of FET but less than BJT. FET and BJT. FET and BJT.
p-n junction to control both (A) and current.
the channel (B). none
it has of these.
better drive gate capacitance to control the channel current.
it is faster.
minority carriers in theitmajority
is TTL compatible.
carries in capability. it is faster.
majority carries in majority carries in
drain the substrate. the source .
Common collector the source .
JEFT amplifier. CE bipolar transistor. bipolar transistor MOSFET.
discrete circuits. disk drives. integrated
None of thecircuit. integrated circuit.
BJT fabrication FET fabrication mentioned
None of the BJT fabrication
Silicon Nitride Silicon dioxide mentioned Silicon dioxide
Silicon dioxide Silicon nitride Poly silicon
Collector, gate
emitter Poly silicon gate
Drain, source and gateDrain, source and basand base. Drain, source and gate.
Depletion mode only Both Enhancement mNone of the above Both Enhancement mode and Depletion mode
the direction of electr the direction of conv that it is a P-chan the direction of electrons
converts
As digital data
VGS increases ID project the data on s As Captures light ID captures light and converts it to digital data
VGS increases
increases. As VGS decreases ID remainsremainsconstant.
constant. AsVGS decreases ID decreases

B C D ANSWERS
Full-wave voltage doubFull-wave bridge circuNone of the above Full-wave bridge circuit
Longer the time that c Larger the peak currenNone of the above Larger the peak current in the rectifying diode
Second harmonic DC component None of the above Fundamental frequency
Both bridge and full-waBridge rectifier is sui None of the above Two diode full-wave rectifier is suitable
the peak value of the secondary
half the peak
voltage
secondafour times the peak the peak value of the secondary voltage
only load regulation. a constant load. load and line regula load and line regulation.
series regulators three-terminal regulaswitching regulators shunt regulators
Smooth dc. Pulsating dc. 120-Hz ac. Pulsating dc.
It costs less than othe It cuts off half of the It never needs a regIt uses the whole transformer secondary for the entire ac input cycle.
Full-wave, center-tap. Bridge. Voltage multiplier. Full-wave, center-tap.
 The rectifier. The filter. The ac input. The filter.
The same as that fromHalf that from a half- One-fourth that fromTwice that from a half-wave circuit.
Parallel with the filte Series with the filte Series with the filt Parallel with the filter output, reverse-biased.
The diodes suddenly s The filter capacitor(s Arcing takes place i The filter capacitor(s) must be initially charged.
capacitor transistor resistor transistor
to limit output voltage to bypass the pass-trato provide current to provide current up to a maximum, but drop current to a lower value when the output becomes shorted, to preve
capacitor transistor resistor transistor
70 80 90 90
Of low ohmic value. Effective for transien Effective for surge Connected in parallel with filter capacitors.
Average load current. Forward voltage. Reverse voltage. Reverse voltage.
Cause the diodes to c Step down the voltag Step up the voltage Cause the diodes to conduct alternately.
Medium. Small. Very large. Small.
Reduce the ripple volt Limit the peak voltageLimit the total curreReduce the ripple voltage in the output.
Remain unaltered withDecrease with R. Increase with load r Decrease with R.
Diode must have high Diode must have high Output voltage is diffOutput voltage is difficult to filter.
81.2%. 90%. 96%. 81.2%.
They have less peak i They require small t They need small tran They need small transformer and also have less peak inverse voltgae.
Zener break down vol Peak repetitive volta Advalance break dowPeak repetitive voltage.
series-shunt series none of the above shunt
stays the same increases none of the above decreases
Very large Equal to the load vol Equal to the input Very small
Switching regulator Shunt regulator Dc-to-dc converter Linear regulator
An increase in load vo A decrease in efficie Less power dissipatiAn increase in load voltage
Current limiting Line regulation Efficiency Load regulation
Constant Equal to load current Used to store energy Constant
Low power dissipationHigh efficiency Little wasted power Built-in short-circuit protection
Output power is high Little power is waste Input power is high Little power is wasted
It uses a series resist The ratio of output t All of the above All of the above
Noisy Inefficient Linear Noisy
It can boost the voltag The pass transistor r It switches the pass The pass transistor replaces the series resistor
Series regulator Switching regulator Dc-to-dc converter Shunt regulator

all of the time only when the input voltage

only when
exceeds
therea isset
anpart
limit
overload
of the time
protection of the load from
to keep
excessive
the power
current
supply
to maintain
transformer
a constant
fromprotection
burning
output up voltage
of the regulator from excessive current
1.11 1.44 1.57. 1.57.
0.5 0.48 1.21 0.48
0.48 1.21 0.812 1.21
0.812 0.5 1 0.406
its voltage regulation diode rating all of the above its filter efficiency
To convert the pulsating
To convert
DC into athe
varying
varying
ACTo
ACconvert
into a pulsating
the smooth
ToDC.
convert
DC intothea pulsating
pulsating DC.
DC into a smooth DC.
The time during which The time during whichThe time during the The time during which the diode(s) is (are) conducting
increased, reduced reduced, increased reduced, reduced reduced, increased
small, zero zero, large large, zero zero, small
Line regulation Temperature stabilityRipple
factor rejection Line regulation
Input voltage Temperature All of the above All of the above
Infinity The zener current A destructive leve A small value
Excessive load curren Oscillations Current sensing Oscillations
Much larger Much smaller Impossible to dete Much smaller
Output power is high Little power is waste Input power is high Output power is high
Positive feedback No feedback Phase limiting Negative feedback
Load resistor Pass transistor Ambient air Pass transistor

In semiconductor In semiconductor andIn thick film In semiconductor and

technology films technology technology only films technology
0.02-8 mils 0-20
Thin mils
and thick film 0.05-0.0 7mils
None of the 0.02-8 mils
thin film technology technology mentioned
All of the thin film technology
Ceramic firing
Surface Mount Silk screening
Ceramic Printing mentioned
Screen Printing Silk screening
Screen Printing
Technology technique technique technique
16 leads 12 leads 24 leads 12 leads
Vertical diffusion
Bridgeman- Czochralski crystal Dopants
Horizontal diffusion diffusion
Laser heated Ion implantation
Czochralski crystal
Stockbarger method growth process pedestal growth growth process

PN-junction isolation
complementary E- Barrier isolation Dielectric isolation Barrier isolation E -
complementary
MOSFETs. class A operation. DMOS devices. MOSFETs.
 low power low power
small - signal operatio switching capability. consumption. consumption.
James Faug Jack Kilby Harold Lanche Jack Kilby
Resistor Inductor Transistor Inductor
Mesa diffusion Grown diffusion Planar diffusion Planar diffusion
Medium-scale integra Large-scale integratio Very large-scale int Very large-scale integration (VLSI)
Medium-scale integra Large-scale integratioVery large-scale inte Large-scale integration (LSI)
Medium-scale integrat Large-scale integratio Very large-scale int Small-scale integration (SSI)
It is one of the tinie It ruggedly resist vib All of the above All of the above
Industrial Military or industrial Military and industr Military and industrial
-55 ºC to +125 ºC -173 ºC to + 100 ºC -10 ºC to + 25 ºC -55 ºC to +125 ºC
Medium-scale integra Large-scale integratioVery large-scale inte Medium-scale integration (MSI)
High reliability Smaller size All of the above All of the above
20 ºC to + 125 ºC -173 ºC to + 100 ºC -10 ºC to + 25 ºC 0ºC to +70 ºC
Heat sink Op-amp Photodiode Heat sink
Discrete IC Linear IC Monolithic IC Digital IC
Discrete IC Linear IC Monolithic IC Linear IC
Passive components Both active and pass None of the above Both active and passive components
Interconnection Doping None of the above Isolation
Protection Packaging None of the above Interconnection

Quality control Both (a) and (b) None of the above Both (a) and (b)

Safety Both (a) and (b) None of the above Both (a) and (b)

Cleaning Interconnection None of the above Selective removal of the unwanted surface
B. 1 µW Less than 1 W More than 1 W but Less than 1 W
Combination of thin-fil Also called hybrid IC Used for high powerForms of discrete circuits
Silicon Nitride Silicon dioxide None of the menti Silicon dioxide
BJT fabrication FET fabrication None of the menti BJT fabrication
Silicon dioxide Silicon nitride Poly silicon gate Poly silicon gate
MOSFET has medium pMOSFET has high packMOSFET has no packMOSFET has high packing density
Dual-in-line package Ceramic flat package All of the mentione All of the mentioned
Silicon planar process Epitaxial growth of si Photolithography p Silicon planar process
Gallium Arsenide, Ga Silicon, Si All of the mentioned Silicon, Si
linear both digital and linea none of the above digital
transistor FET capacitor capacitor
capacitors transistors and diodenone of the above transistors and diodes
digital signals only both digital and linea none of the above both digital and linear signals
an insulating layer mechanical output none of the above an insulating layer
monolithic hybrid none of the above monolithic
digital ICs both linear and digitanone of the above digital ICs
while growing the epitaduring base diffusion during the collector during base diffusion
TTL/CMOS ECL TTL/MOS BiCMOS
LSI functions diode functions TTL functions LSI functions
Low packing density Moderate packing de. None of the above High packing density
16 and 32- bit micropr Special processors a All of the mentione Special processors and Smart sensors
Use of Silicon nitride Using thin film tech None of the menti Use of Silicon nitride
10,000 mil2 1,60,000 mil2 16,000 mil2 1,60,000 mil2
Medium Scale Integra Large Scale Integratio Very Large Scale Int Medium Scale Integration (MSI)
30-300 300-3000 More than 3000 3 - 30 gates
ng for maximum power transfer
becomes shorted, to prevent overheating of the device