JEE

PRAYAS JEE 2024

PHYSICS
Semiconductor

Q1 Electrical conductivity of a semiconductor There is an electric field at the junction

(A) Decreases with the rise in its temperature directed from the N -type side to the P -
(B) Increases with the rise in its temperature type side
(C) Does not change with the rise in its (D) There is an electric field at the junction
temperature directed from the P -type side to the N -
(D) First increases and then decreases with the type side
rise in its temperature
Q4 A potential barrier of 0.50 V exists across a
Q2 Which of the following energy band diagram P − N junction. If the depletion region is
shows the N-type semiconductor 5.0 × 10
−7
m wide, the intensity of the electric
(A) field in this region is
(A) 1.0 × 106 V/m

(B) 1.0 × 10 5
V/m

(C) 2.0 × 10 5
V/m

(D) 2.0 × 10 6
V/m

(B)
Q5 Zener breakdown takes place if
(A) Doped impurity is low
(B) Doped impurity is high
(C) Less impurity in N -part
(D) Less impurity in P-type
(C)
Q6 The current through an ideal PN -junction
shown in the following circuit diagram will be

(D)

(A) Zero
(B) 1 mA
(C) 10 mA
(D) 30 mA
Q3 In a PN -junction diode not connected to any
circuit Q7 In an NPN transistor the collector current is
(A) The potential is the same everywhere 24 mA . If 80% of electrons reach collector its
(B) The P -type is a higher potential than the N base current in mA is
-type side (A) 36 (B) 26
(C) (C) 16 (D) 6

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Q8 A NPN transistor conducts when Q12 The circuit shown in following figure contains
(A) Both collector and emitter are positive with two diode D1 and D2 each with a forward
respect to the base resistance of 50ohms and with infinite
(B) Collector is positive and emitter is negative backward resistance. If the battery voltage is
with respect to the base 6 V , the current through the 100 ohm resistance
(C) Collector is positive and emitter is at same (in amperes) is
potential as the base
(D) Both collector and emitter are negative with
respect to the base

Q9 The symbol given in figure represents

(A) Zero (B) 0.02

(C) 0.03 (D) 0.036

Q13 Ge and Si diodes conduct at 0.3 V and 0.7 V

(A) NPN transistor respectively. In the following figure if Ge diode

(B) PNP transistor connection are reversed, the valve of V0

(C) Forward biased P N junction diode changes by

(D) Reverse biased N P junction diode

Q10 Given below are symbols for some logic gates

(A) 0.2 V
The XOR gate and N OR gate respectively (B) 0.4 V
are (C) 0.6 V
(A) 1 and 2 (B) 2 and 3 (D) 0.8 V
(C) 3 and 4 (D) 1 and 4
Q14 In the following circuit find I1 and I2
Q11 In the following common emitter configuration
an NPN transistor with current gain β = 100

is used. The output voltage of the amplifier will

be

(A) 0,0
(B) 5 mA, 5 mA
(C) 5 mA, 0
(D) 0, 5 mA

Q15 The following configuration of gate is

(A) 10mV
equivalent to
(B) 0.1 V
(C) 1.0 V
(D) 10 V

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Q20 For the given diagram the correct truth table is

(A) NAND (B) XOR

(C) OR (D) None of these
(A)
Q16 Let np and ne be the number of holes and
conduction electrons respectively in a
semiconductor. Then
(A) np > ne in an intrinsic semiconductor (B)
(B) np = ne in an extrinsic semiconductor
(C) np = ne in an intrinsic semiconductor
(D) ne > np in an intrinsic semiconductor
(C)
Q17 For a common-emitter configuration, if α and β
have their usual meanings, the incorrect
relationship between α and β is
(A) 1
=
1
+ 1
(D)
α β

(B) α =
β

1−β

(C) α =
β

1+β

(D) α
2
β
=
1+β
2 Q21 For the given diagram the Boolean expression is

Q18 A full wave rectifier circuit along with the output

is shown in figure. The contribution (s) from the
diode 1 is (are)

(A) (A ⋅ B) ⋅ (A
¯
⋅ B)

(B) (A ⋅ B
¯ ¯
) ⋅ (A ∙ B)

(C) (A
¯ ¯
⋅ B) ⋅ (A ⋅ B)

(D) (A + B) + (A
¯
∙ B)

Q22 Suppose a pure Si crystal has 5 × 10

28
atoms
/m
3
. It is doped by 1ppm concentration of
(A) C pentavalent AS. If ni = 1.5 × 10
16 3
/m . The no.
(B) A, C of holes are 1.5n× 10 9
/m
3
. The value of n is
(C) B, D
Q23 In a Zener regulated power supply a Zener
(D) A, B, C , D
diode with Vz = 6.0 V is used for regulation.
Q19 The impurity atoms with which pure silicon The load current is to be 4.0 m A and
should be doped to make a p-type unregulated voltage input is 10.0 V . The
semiconductor are those of maximum value of Zener current is 20 mA . The
(A) Phosphorus (B) Boron value of series resistor required is 25 n

(C) Antimony (D) Aluminium approximately. Find the value of n.

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Q24 In a common emitter transistor amplifier the

change in base current of 2 mA , changes the
current in collector by 200 mA . The resistance
on the collector side is 3kΩ and on base side is
2kΩ . Match the following.

(A) (A − R); (B − P); (C − Q); (D − S)

(B) (A − P); (B − S); (C − Q); (D − R)
(C) (A − S); (B − P); (C − Q); (D − R)
(D) (A − Q); (B − P); (C − S); (D − R)

Q25 Match the following

(A) (A − S); (B − P); (C − Q); (D − R)

(B) (A − P); (B − S); (C − Q); (D − R)
(C) (A − Q); (B − R); (C − S); (D − P)
(D) (A − Q); (B − P); (C − S); (D − R)

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Answer Key
Q1 (B) Q14 (D)

Q2 (B) Q15 (B)

Q3 (C) Q16 (C)

Q4 (A) Q17 (B, D)

Q5 (B) Q18 (B)

Q6 (A) Q19 (B, D)

Q7 (D) Q20 (C)

Q8 (B) Q21 (A)

Q9 (A) Q22 3

Q10 (B) Q23 6

Q11 (C) Q24 (A)

Q12 (B) Q25 (A)

Q13 (B)

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