750V-5.

4mW SiC FET

Rev. A, February 2023

DATASHEET
Description

UJ4SC075005L8S The UJ4SC075005L8S is a 750V, 5.4mΩ G4 SiC FET. It is based on a

unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET
is co-packaged with a Si MOSFET to produce a normally-off SiC FET
device. The device’s standard gate-drive characteristics allows use of
off-the-shelf gate drivers hence requiring minimal re-design when
replacing Si IGBTs, Si superjunction devices or SiC MOSFETs.
Available in the space-saving MO-229 package which enables
TAB automated assembly, this device exhibits ultra-low gate charge and
exceptional reverse recovery characteristics, making it ideal for
TAB
D switching inductive loads and any application requiring standard gate
drive.

1
8
Features
G (1)
TAB
w On-resistance RDS(on): 5.4mW (typ)
KS (2)
w Operating temperature: 175°C (max)
S (3-8) w Excellent reverse recovery: Qrr = 440nC
8 w Low body diode VFSD: 1.03V
1
w Low gate charge: QG =164nC
w Threshold voltage VG(th): 4.7V (typ) allowing 0 to 15V drive
w Low intrinsic capacitance
w ESD protected, HBM class 2
Part Number Package Marking w MO-229 package for faster switching, clean gate waveforms
UJ4SC075005L8S MO-229 UJ4SC075005
Typical applications

w Solid state relays and circuit-breakers

w Line rectification and active-bridge rectification circuits in AC/DC
front-ends
w EV charging
w PV inverters
w Switch mode power supplies
w Power factor correction modules
w Motor drives
w Induction heating

Datasheet: UJ4SC075005L8S Rev. A, February 2023 1

Maximum Ratings

Parameter Symbol Test Conditions Value Units

Drain-source voltage VDS 750 V
DC -20 to +20 V
Gate-source voltage VGS
AC (f > 1Hz) -25 to +25 V
Continuous drain current 1 ID TC < 144°C 120 A
Pulsed drain current 2 IDM TC = 25°C 588 A
Single pulsed avalanche energy 3 EAS L=15mH, IAS = 6.5A 316 mJ
Short circuit withstand time 4 tSC VDS = 400V, TJ(START) = 175°C 5 ms
SiC FET dv/dt ruggedness dv/dt VDS [ 500V 100 V/ns
Power dissipation Ptot TC = 25°C 1153 W
Maximum junction temperature TJ,max 175 °C
Operating and storage temperature TJ, TSTG -55 to 175 °C
Reflow soldering temperature Tsolder reflow MSL 1 260 °C

1. Limited by bondwires
2. Pulse width tp limited by TJ,max
3. Starting TJ = 25°C
4. Short circuit current is independent of the gate voltage VGS>12V

Thermal Characteristics

Value
Parameter Symbol Test Conditions Units
Min Typ Max
Thermal resistance, junction-to-case RqJC 0.10 0.13 °C/W

Datasheet: UJ4SC075005L8S Rev. A, February 2023 2

Electrical Characteristics (TJ = +25°C unless otherwise specified)

Typical Performance - Static

Value
Parameter Symbol Test Conditions Units
Min Typ Max
Drain-source breakdown voltage BVDS VGS=0V, ID=1mA 750 V
VDS=750V,
6 130
VGS=0V, TJ=25°C
Total drain leakage current IDSS mA
VDS=750V,
45
VGS=0V, TJ=175°C
VDS=0V, TJ=25°C,
Total gate leakage current IGSS 6 20 mA
VGS=-20V / +20V
VGS=12V, ID=80A,
5.4 7.2
TJ=25°C
VGS=12V, ID=80A,
Drain-source on-resistance RDS(on) 9.3 mW
TJ=125°C
VGS=12V, ID=80A,
12.2
TJ=175°C
Gate threshold voltage VG(th) VDS=5V, ID=10mA 4 4.7 6 V
Gate resistance RG f=1MHz, open drain 0.8 1.5 W

Typical Performance - Reverse Diode

Value
Parameter Symbol Test Conditions Units
Min Typ Max
Diode continuous forward current 1 IS TC < 144°C 120 A
Diode pulse current 2 IS,pulse TC=25°C 588 A
VGS=0V, IS=50A,
1.03 1.16
TJ=25°C
Forward voltage VFSD V
VGS=0V, IS=50A,
1.06
TJ=175°C
VDS=400V, IS=80A,
Reverse recovery charge Qrr 440 nC
VGS=0V, RG=20W
di/dt=2800A/ms,
Reverse recovery time trr TJ=25°C 31 ns

Reverse recovery charge Qrr VDS=400V, IS=80A,

525 nC
VGS=0V, RG=20W
di/dt=2800A/ms,
Reverse recovery time trr 37 ns
TJ=150°C

Datasheet: UJ4SC075005L8S Rev. A, February 2023 3

Typical Performance - Dynamic

Value
Parameter Symbol Test Conditions Units
Min Typ Max
Input capacitance Ciss 8374
VDS=400V, VGS=0V
Output capacitance Coss 362 pF
f=100kHz
Reverse transfer capacitance Crss 4
Effective output capacitance, energy VDS=0V to 400V,
Coss(er) 475 pF
related VGS=0V
Effective output capacitance, time VDS=0V to 400V,
Coss(tr) 950 pF
related VGS=0V
COSS stored energy Eoss VDS=400V, VGS=0V 38 mJ
Total gate charge QG 164
VDS=400V, ID=80A,
Gate-drain charge QGD 24 nC
VGS = 0V to 15V
Gate-source charge QGS 46
Turn-on delay time td(on) 35
Rise time tr Notes 5 and 6, 39
VDS=400V, ID=80A, Gate ns
Turn-off delay time td(off) Driver =0V to +15V, 109
Fall time tf Turn-on RG,EXT=1.5W, 13
Turn-on energy including RS energy EON Turn-off RG,EXT=5W, 766
Turn-off energy including RS energy EOFF inductive Load, FWD: 162
same device with VGS = 0V
Total switching energy ETOTAL 928
and RG = 5W, RC snubber: mJ
Snubber RS energy during turn-on ERS_ON RS=5W and CS=680pF, 17.6
TJ=25°C
Snubber RS energy during turn-off ERS_OFF 7.2

Turn-on delay time td(on) 37

Notes 5 and 6,
Rise time tr 41
VDS=400V, ID=80A, Gate ns
Turn-off delay time td(off) Driver =0V to +15V, 114
Fall time tf Turn-on RG,EXT=1.5W, 13
Turn-off RG,EXT=5W,
Turn-on energy including RS energy EON 808
inductive Load, FWD: same
Turn-off energy including RS energy EOFF device with VGS = 0V and 187
RG = 5W, RC snubber:
Total switching energy ETOTAL 995 mJ
RS=5W and CS=680pF,
Snubber RS energy during turn-on ERS_ON TJ=150°C 18.3
Snubber RS energy during turn-off ERS_OFF 10.3

5. Measured with the switching test circuit in Figure 26.

6. In this datasheet, all the switching energies (turn-on energy, turn-off energy and total energy) presented in the tables and Figures include
the device RC snubber energy losses.

Datasheet: UJ4SC075005L8S Rev. A, February 2023 4

Typical Performance Diagrams

350 350

300 300

250 250
Drain Current, ID (A)

Drain Current, ID (A)

Vgs = 15V
200 200 Vgs = 15V
Vgs = 8V
Vgs = 10V
150 Vgs = 7V 150
Vgs = 8V
Vgs = 6.5V Vgs = 7V
100 100
Vgs = 6V Vgs = 6.5V
50 50 Vgs = 6V

0 0
0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10
Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)

Figure 1. Typical output characteristics at TJ = - 55°C, tp Figure 2. Typical output characteristics at TJ = 25°C, tp <
< 250ms 250ms

350 2.5

300
On Resistance, RDS_ON (P.U.)

2.0
250
Drain Current, ID (A)

Vgs = 15V 1.5

200
Vgs = 10V
150 Vgs = 8V
1.0
Vgs = 7V
100 Vgs = 6.5V
Vgs = 6V 0.5
50
Vgs = 5.5V
0 0.0
0 1 2 3 4 5 6 7 8 9 10 -75 -50 -25 0 25 50 75 100 125 150 175
Drain-Source Voltage, VDS (V) Junction Temperature, TJ (°C)

Figure 3. Typical output characteristics at TJ = 175°C, tp Figure 4. Normalized on-resistance vs. temperature at
< 250ms VGS = 12V and ID = 80A

Datasheet: UJ4SC075005L8S Rev. A, February 2023 5

 20 300
Tj = 175°C
Tj = -55°C
Tj = 125C
250 Tj = 25°C
16
On-Resistance, RDS(on) (mW)

Tj = 25°C
Tj = - 55°C Tj = 175°C

Drain Current, ID (A)

200
12
150
8
100

4
50

0 0
0 50 100 150 200 250 300 350 0 1 2 3 4 5 6 7 8 9 10
Drain Current, ID (A) Gate-Source Voltage, VGS (V)

Figure 5. Typical drain-source on-resistances at VGS = Figure 6. Typical transfer characteristics at VDS = 5V
12V

6 20
Gate-Source Voltage, VGS (V)

5
Threshold Voltage, Vth (V)

15
4

3 10

2
5
1

0 0
-100 -50 0 50 100 150 200 0 50 100 150 200 250
Junction Temperature, TJ (°C) Gate Charge, QG (nC)

Figure 7. Threshold voltage vs. junction temperature at Figure 8. Typical gate charge at VDS = 400V and ID = 80A
VDS = 5V and ID = 10mA

Datasheet: UJ4SC075005L8S Rev. A, February 2023 6

 0 0
Vgs = -5V Vgs = - 5V
-50 Vgs = 0V -50 Vgs = 0V
Vgs = 5V
Drain Current, ID (A)

Drain Current, ID (A)

Vgs = 5V
Vgs = 8V Vgs = 8V
-100 -100

-150 -150

-200 -200

-250 -250
-4 -3 -2 -1 0 -4 -3 -2 -1 0
Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)

Figure 9. 3rd quadrant characteristics at TJ = -55°C Figure 10. 3rd quadrant characteristics at TJ = 25°C

0 120
Vgs = - 5V
100
-50 Vgs = 0V
Vgs = 5V
Drain Current, ID (A)

80
-100 Vgs = 8V
EOSS (mJ)

60
-150
40

-200
20

-250 0
-4 -3 -2 -1 0 0 100 200 300 400 500 600 700 800
Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)

Figure 11. 3rd quadrant characteristics at TJ = 175°C Figure 12. Typical stored energy in COSS at VGS = 0V

Datasheet: UJ4SC075005L8S Rev. A, February 2023 7

 1.E+05 140

Ciss 120
1.E+04

DC Drain Current, ID (A)

Capacitance, C (pF)

100
1.E+03 Coss 80

1.E+02 60

40
1.E+01 Crss
20

1.E+00 0
0 100 200 300 400 500 600 700 800 -75 -50 -25 0 25 50 75 100 125 150 175
Drain-Source Voltage, VDS (V) Case Temperature, TC (°C)

Figure 13. Typical capacitances at f = 100kHz and VGS = Figure 14. DC drain current derating
0V

1400

1200
Thermal Impedance, ZqJC (°C/W)
Power Dissipation, Ptot (W)

0.1
1000

800 D = 0.5
0.01
D = 0.3
600
D = 0.1
D = 0.05
400 0.001 D = 0.02
200 D = 0.01
Single Pulse
0 0.0001
-75 -50 -25 0 25 50 75 100 125 150 175 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01
Case Temperature, TC (°C) Pulse Time, tp (s)

Figure 15. Total power dissipation Figure 16. Maximum transient thermal impedance

Datasheet: UJ4SC075005L8S Rev. A, February 2023 8

 1000 600

1ms
500
100
10ms 400
Drain Current, ID (A)

Qrr (nC)
100ms
10 300

1ms 200
DC 10ms IS = 80A,
1 di/dt = 2800A/ms,
100 VGS = 0V, RG =20W

0.1 0
1 10 100 1000 0 25 50 75 100 125 150 175
Drain-Source Voltage, VDS (V) Junction Temperature, TJ (°C)

Figure 17. Safe operation area at TC = 25°C, D = 0, Figure 18. Reverse recovery charge Qrr vs. junction
Parameter tp temperature at VDS = 400V

1600 60
VGS = 0V/15V, RG_ON=1.5W, VGS = 0V/15V, RG_ON=1.5W,
1400 RG_OFF=5W, Device RC snubber: 50 RG_OFF=5W, Device RC snubber:
Snubber RS Energy (mJ)

CS=680pF, RS = 5W, FWD: same CS=680pF, RS = 5W, FWD: same

1200
Switching Energy (mJ)

device with VGS = 0V, RG = 5W device with VGS = 0V, RG = 5W

40
1000

800 30
Etot
600
Eon 20
400 Eoff Rs_Etot
Rs_Eon
10
200 Rs_Eoff

0 0
0 20 40 60 80 100 120 0 20 40 60 80 100 120
Drain Current, ID (A) Drain Current, ID (A)

Figure 19. Clamped inductive switching energy vs. drain Figure 20. RC snubber energy loss vs. drain current at
current at VDS = 400V and TJ = 25°C VDS = 400V and TJ = 25°C

Datasheet: UJ4SC075005L8S Rev. A, February 2023 9

 1400 25
VGS = 0V/15V, Device RC snubber:
1200 Eon
CS=680pF, RS = 5W, FWD: same
Eoff 20
Switching Energy (mJ)

Snubber RS Energy (mJ)

device with VGS = 0V
1000
Rs_Eon
800 15
Rs_Eoff
VGS = 0V/15V, Device RC snubber:
600 CS=680pF, RS = 5W, FWD: same
10
device with VGS = 0V
400
5
200

0 0
0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20
External RG, RG_EXT (W)
External RG, RG,_EXT (W)

Figure 21. Clamped inductive switching energies vs. Figure 22. RC snubber energy losses vs. RG,EXT at VDS =
RG,EXT at VDS = 400V, ID = 80A, and TJ = 25°C 400V, ID = 80A, and TJ = 25°C

1000 30
900
25
800 VGS = 0V/15V, RG_ON=1.5W, RG_OFF=5W,
Snubber RS Energy (μJ)
Switching Energy (mJ)

700 Device RC snubber: RS = 5W, FWD:

VGS = 0V/15V, RG_ON=1.5W, 20 same device with VGS = 0V, RG = 5W
600 RG_OFF=5W, Device RC
500 snubber: RS = 5W, FWD: same 15
device with VGS = 0V, RG = 5W
400
Etot 10
300 Eon
200 Eoff Rs_Etot
5 Rs_Eon
100 Rs_Eoff
0 0
100 200 300 400 500 600 700 800 100 200 300 400 500 600
Snubber Capacitance, CS (pF) Snubber Capacitance, CS (pF)

Figure 23. Clamped inductive switching energies vs. Figure 24. RC snubber energy losses vs. snubber
snubber capacitance CS at VDS = 400V, ID = 80A, and TJ = capacitance CS at VDS = 400V, ID = 80A, and TJ = 25°C
25°C

Datasheet: UJ4SC075005L8S Rev. A, February 2023 10

 1200

1000
Switching Energy (mJ)

800

600 VGS = 0V/15V, RG_ON=1.5W, , Etot

RG_OFF=5W, Device RC Eon
snubber: CS=680pF, RS = Eoff
400 5W, FWD: same device with
VGS = 0V, RG = 5W
200

0
0 25 50 75 100 125 150 175
Junction Temperature, TJ (°C)

Figure 25. Clamped inductive switching energy vs. Figure 26. Schematic of the half-bridge mode switching
junction temperature at VDS =400V and ID = 80A test circuit. Note, a device snubber (Rs =5Ω, Cs = 680pF)
and bus RC snubber (RBS = 1W, CBS=100nF) is used to
reduce the power loop high frequency oscillations.

Datasheet: UJ4SC075005L8S Rev. A, February 2023 11

Applications Information

SiC FETs are enhancement-mode power switches formed by a high-voltage SiC depletion-mode JFET and a low-voltage silicon MOSFET
connected in series. The silicon MOSFET serves as the control unit while the SiC JFET provides high voltage blocking in the off state. This
combination of devices in a single package provides compatibility with standard gate drivers and offers superior performance in terms of low
on-resistance (RDS(on)), output capacitance (Coss), gate charge (QG), and reverse recovery charge (Qrr) leading to low conduction and switching
losses. The SiC FETs also provide excellent reverse conduction capability eliminating the need for an external anti-parallel diode.
Like other high performance power switches, proper PCB layout design to minimize circuit parasitics is strongly recommended due to the high
dv/dt and di/dt rates. An external gate resistor is recommended when the FET is working in the diode mode in order to achieve the optimum
reverse recovery performance. For more information on SiC FET operation, see www.unitedsic.com.
A snubber circuit with a small R(G), or gate resistor, provides better EMI suppression with higher efficiency compared to using a high R(G) value.
There is no extra gate delay time when using the snubber circuitry, and a small R(G) will better control both the turn-off V(DS) peak spike and
ringing duration, while a high R(G) will damp the peak spike but result in a longer delay time. In addition, the total switching loss when using a
snubber circuit is less than using high R(G), while greatly reducing E(OFF) from mid-to-full load range with only a small increase in E(ON). Efficiency
will therefore improve with higher load current. For more information on how a snubber circuit will improve overall system performance, visit
the UnitedSiC website at www.unitedsic.com

Important notice

The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained herein
and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained herein is
subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo
products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent
rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such
information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN,
AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED
BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED
WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing,
Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other
applications where a failure would reasonably be expected to cause severe personal injury or death.

Datasheet: UJ4SC075005L8S Rev. A, February 2023 12

Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

Qorvo:

UJ4SC075005L8S