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Lecture Note 2

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21 views3 pages

Lecture Note 2

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arunav.verma9793
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Lecture note-2: Lithography

1. Photolithography
2. E-beam lithoghraphy
3. Nano imprint lithography
Resolution of optical lithography:

The fundamental guide for optical step and repeat lithography is the Rayleigh equation, which provides the
scaling criteria for predicting the smallest optically definable image

Optical lithography started with the near ultraviolet (UV) g-line (436 nm) and i-lines (365 nm) of mercury arc
lamps and made way for laser sources in the deep ultraviolet (DUV) from KrF (248 nm) and ArF (193 nm)
excimers. A significant extension, immersion lithography, decreases the 193 nm wavelength by using water as
the immersion fluid and is on track to produce features down to 32 nm.
Near UV: ~250nm-350 nm

Deep UV or DUV (~150-250 nm wavelengths)

Extreme UV: EUV (3-50 nm wavelengths)

In this roadmap, several emerging lithography approaches are enlighten. Double patterning with 193 nm DUV
water immersion is expected to extend to the 32 nm half pitch era with high-volume production in 2013.
Alternatively, contending technologies for 22 nm half pitch are EUV Lithography, 193 nm DUV immersion
with higher index fluid and lens materials, maskless lithography (ML2), and nanoimprint lithography

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(NIL).10,11 NIL is rapidly emerging as a low-cost, high-resolution, and versatile alternative to optical
lithography.

Chemically amplified photoresists are formulations of an acid-sensitive polymer film mixed with photo-acid-
generators (PAGs) and other additives, such as base quenchers. Upon exposure through a mask, strong acids
are formed by photolysis of the molecularly mixed PAG within the thin film. A post-exposure bake is then
applied and the acidic protons (photoacids) diffuse along with the counter-anions and catalyze a deprotection
reaction on the acid-sensitive polymer to change the local solubility for development in an aqueous hydroxide
solution as shown in Figure 19.7.

poly(methyl methacrylate) (PMMA) and a novolac-based chemically amplified resist produced using EUV
lithography. Molecular glass (MG) photoresists are a relatively recent advance for next generation
lithography. In contrast to conventional resist materials which are usually polymeric and
polydisperse,MGresists are small, monodisperse organic molecules that form stable amorphous glasses at
room temperature. 51 The natural tendency of small molecules to crystallize can be avoided by incorporation
of bulky groups, non-planer structures or a variety of conformers into the molecular design of new materials.

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If correctly designed, MGs are in a state of thermodynamic non-equilibrium (much like amorphous polymers)
and hence show Tg values rather than crystalline melting points.

References:“Nanoelectronics Lithography” by Stephen Knight, Vivek M. Prabhu..CRC Press

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