BLF245

VHF power MOS transistor

Rev. 5 — 1 September 2015 Product data sheet

IMPORTANT NOTICE

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Philips Semiconductors Product specification

VHF power MOS transistor BLF245

FEATURES PIN CONFIGURATION

• High power gain
• Low noise figure lfpage

• Easy power control 1 4

• Good thermal stability d

• Withstands full load mismatch.
g
MBB072 s
DESCRIPTION
Silicon N-channel enhancement 2 3
mode vertical D-MOS transistor
designed for large signal amplifier MSB057

applications in the VHF frequency

range. Fig.1 Simplified outline and symbol.

The transistor is encapsulated in a

4-lead SOT123A flange package,
with a ceramic cap. All leads are CAUTION
isolated from the flange. This product is supplied in anti-static packing to prevent damage caused by
Matched gate-source voltage (VGS) electrostatic discharge during transport and handling. For further information,
groups are available on request. refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.

PINNING - SOT123A WARNING

PIN DESCRIPTION Product and environmental safety - toxic materials

1 drain This product contains beryllium oxide. The product is entirely safe provided
2 source that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
3 gate
precautions. After use, dispose of as chemical or special waste according to
4 source the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.

QUICK REFERENCE DATA

RF performance at Th = 25 °C in a class-B test circuit.

f VDS PL Gp ηD
MODE OF OPERATION
(MHz) (V) (W) (dB) (%)
CW, class-B 175 28 30 >13 >50

2003 Sep 02 2
Philips Semiconductors Product specification

VHF power MOS transistor BLF245

LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage VGS = 0 − 65 V
VGS gate-source voltage VDS = 0 − ±20 V
ID drain current (DC) − 6 A
Ptot total power dissipation Tmb ≤ 25 °C − 68 W
Tstg storage temperature −65 150 °C
Tj junction temperature − 200 °C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-mb thermal resistance from junction to mounting base Tmb = 25 °C; Ptot = 68 W 2.6 K/W
Rth mb-h thermal resistance from mounting base to heatsink Tmb = 25 °C; Ptot = 68 W 0.3 K/W

MRA921 MGP167
10 100
handbook, halfpage handbook, halfpage
Ptot
ID (W)
(A) 80
(1) (2)

(2)
60

1
(1)

40

20

10−1 0
1 10 102 0 40 80 120 160
VDS (V) Th (°C)

(1) Current is this area may be limited by RDSon. (1) Continuous operation.
(2) Tmb = 25 °C. (2) Short-time operation during mismatch.

Fig.2 DC SOAR. Fig.3 Power derating curves.

2003 Sep 02 3
Philips Semiconductors Product specification

VHF power MOS transistor BLF245

CHARACTERISTICS
Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 10 mA 65 − − V
IDSS drain-source leakage current VGS = 0; VDS = 28 V − − 2 mA
IGSS gate-source leakage current VGS = ±20 V; VDS = 0 − − 1 µA
VGSth gate-source threshold voltage ID = 10 mA; VDS = 10 V 2 − 4.5 V
∆VGS gate-source voltage difference of ID = 0 mA; VDS = 10 V − − 100 mV
matched devices
gfs forward transconductance ID = 1.5 A; VDS = 10 V 1.2 1.9 − S
RDSon drain-source on-state resistance ID = 1.5 A; VGS = 10 V − 0.4 0.75 Ω
IDSX on-state drain current VGS = 10 V; VDS = 10 V − 10 − A
Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 125 − pF
Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 75 − pF
Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 7 − pF
F noise figure input and output power matched for: − 2 − dB
ID = 1 A; VDS = 28 V; PL = 30 W;
R1 = 1 kΩ; Th = 25 °C; f = 175 MHz;
see Fig.14

VGS group indicator

LIMITS LIMITS
GROUP (V) GROUP (V)
MIN. MAX. MIN. MAX.
A 2.0 2.1 O 3.3 3.4
B 2.1 2.2 P 3.4 3.5
C 2.2 2.3 Q 3.5 3.6
D 2.3 2.4 R 3.6 3.7
E 2.4 2.5 S 3.7 3.8
F 2.5 2.6 T 3.8 3.9
G 2.6 2.7 U 3.9 4.0
H 2.7 2.8 V 4.0 4.1
J 2.8 2.9 W 4.1 4.2
K 2.9 3.0 X 4.2 4.3
L 3.0 3.1 Y 4.3 4.4
M 3.1 3.2 Z 4.4 4.5
N 3.2 3.3

2003 Sep 02 4
Philips Semiconductors Product specification

VHF power MOS transistor BLF245

MGP168 MGP169
6 12
handbook, halfpage handbook, halfpage
T.C. Tj = 25 °C
(mV/K)
ID
4
(A)

125 °C
2 8

−2 4

−4

−6 0
10 102 103 104 0 10 20
ID (mA) VGS (V)

VDS = 10 V; valid for Tj = 25 to 125 °C.

VDS = 10 V.
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current; typical Fig.5 Drain current as a function of gate-source
values. voltage; typical values.

MGP170 MGP171
0.8 240
handbook, halfpage handbook, halfpage
RDSon C
(pF)
(Ω)
200
0.6

160

0.4
Cis
120

0.2 Cos
80

0 40
0 40 80 120 160 0 10 20 30 40
Tj (°C) VDS (V)

VGS = 10 V; ID = 1.5 A.
VGS = 0; f = 1 MHz.
Fig.6 Drain-source on-state resistance as a
function of junction temperature; typical Fig.7 Input and output capacitance as functions
values. of drain-source voltage; typical values.

2003 Sep 02 5
Philips Semiconductors Product specification

VHF power MOS transistor BLF245

MRA920
20
handbook, halfpage

Crs
(pF)

10

0
0 10 20 30
VDS (V)

VGS = 0; f = 1 MHz.

Fig.8 Feedback capacitance as a function of

drain-source voltage; typical values.

APPLICATION INFORMATION FOR CLASS-B OPERATION

Th = 25 °C; Rth mb-h = 0.3 K/W; R1 = 1 kΩ.
RF performance in CW operation in a common source class-B test circuit.
f VDS IDQ PL Gp ηD Zi ZL
MODE OF OPERATION
(MHz) (V) (mA) (W) (dB) (%) (Ω)(1) (Ω)
CW, class-B 175 28 50 30 >13 < 50 2.0 − j2.7 3.9 + j4.4
typ. 15.5 typ. 67
175 12.5 50 12 typ. 12 typ. 66 2.4 − j2.5 3.8 + j1.3

Note
1. R1 included.

Ruggedness in class-B operation

The BLF245 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the
following conditions: Th = 25 °C; Rth mb-h = 0.3 K/W; at rated load power.

2003 Sep 02 6
Philips Semiconductors Product specification

VHF power MOS transistor BLF245

MGP172 MEA736
20 100 60
handbook, halfpage handbook, halfpage
PL
Gp ηD (W)
Gp
(dB) (%) 50
ηD

40

10 50

30

20

0 0 10
10 20 30 40 50 0 0.6 1.2 1.8 2.4
PL (W)
PIN (W)

Class-B operation; VDS = 28 V; IDQ = 50 mA; Class-B operation; VDS = 28 V; IDQ = 50 mA;
f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W. f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W.

Fig.9 Power gain and efficiency as functions of Fig.10 Load power as a function of input power;
load power; typical values. typical values.

MGP173 MEA737
20 100 20
handbook, halfpage handbook, halfpage

Gp ηD PL
(dB) (%) (W)
ηD

Gp

10 50 10

0 0 0
0 10 20 0 0.6 1.2 1.8 2.4
PL (W)
PIN (W)

Class-B operation; VDS = 12.5 V; IDQ = 50 mA; Class-B operation; VDS = 12.5 V; IDQ = 50 mA;
f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W. f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W.

Fig.11 Power gain and efficiency as functions of Fig.12 Load power as a function of input power;
load power; typical values. typical values.

2003 Sep 02 7
Philips Semiconductors Product specification

VHF power MOS transistor BLF245

C7
handbook, full pagewidth
C9
Zi L3
D.U.T. L6 50 Ω
C1 L1 L2 output
50 Ω C8
input C10
C2 R1 L4

C3
C5
R2 C6 R3

C4
L5

+VGG
+VDD MGP174

f = 175 MHz.

Fig.13 Test circuit for class-B operation.

2003 Sep 02 8
Philips Semiconductors Product specification

VHF power MOS transistor BLF245

List of components class-B test circuit (see Fig.14)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1 film dielectric trimmer 4 to 40 pF 2222 809 07008
C2, C8 film dielectric trimmer 5 to 60 pF 2222 809 07011
C3 multilayer ceramic chip capacitor 100 pF 2222 854 13101
C4, C6 multilayer ceramic chip capacitor 100 nF 2222 852 47104
C5 ceramic capacitor 100 pF 2222 680 10101
C7 multilayer ceramic chip capacitor; note 1 18 pF
C9 multilayer ceramic chip capacitor; note 1 27 pF
C10 multilayer ceramic chip capacitor; note 1 24 pF
L1 3 turns enamelled 0.5 mm copper wire 13.5 nH length 3.5 mm
int. dia. 2 mm
leads 2 × 2 mm
L2, L3 stripline; note 2 30 Ω 10 × 6 mm
L4 6 turns enamelled 1.5 mm copper wire 98 nH length 12.5 mm
int. dia. 5 mm
leads 2 × 2 mm
L5 grade 3B Ferroxcube RF choke 4312 020 36640
L6 2 turns enamelled 1.5 mm copper wire 24.5 nH length 4 mm
int. dia. 5 mm
leads 2 × 2 mm
R1 metal film resistor 1 kΩ
R2 metal film resistor 1 MΩ
R3 metal film resistor 10 Ω

Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are mounted on a double copper-clad PCB with epoxy fibre-glass dielectric (εr = 4.5),
thickness 1⁄16 inch.

2003 Sep 02 9
Philips Semiconductors Product specification

VHF power MOS transistor BLF245

135
handbook, full pagewidth

copper straps

rivets

72

copper strap

copper straps

+VGG
L5
+VDD
C3 C4 C5
R2
C6
L4 R3
R1
C1 C2 L1 C8
L2 L3
C7 C9
L6
C10

MGP175

Dimensions in mm.
The circuit and components are situated on one side of the epoxy fibre-glass board; the other side is unetched copper and serves as an earth. Earth
connections are made by means of fixing screws, hollow rivets and copper straps under the sources and around the edges, to provide a direct contact
between the copper on the component side and the ground plane.

Fig.14 Component layout for 175 MHz class-B test circuit.

2003 Sep 02 10
Philips Semiconductors Product specification

VHF power MOS transistor BLF245

MGP177 MGP178
40 16
handbook, halfpage handbook, halfpage
Zi ZL
(Ω) (Ω)

30 12
RL

20 8

−xi
XL
10 4

ri

0 0
20 40 60 80 100 120 20 40 60 80 100 120
f (MHz) f (MHz)

Class-B operation; VDS = 28 V; IDQ = 50 mA; Class-B operation; VDS = 28 V; IDQ = 50 mA;
PL = 30 W; Th = 25 °C; Rth mb-h = 0.3 K/W. PL = 30 W; Th = 25 °C; Rth mb-h = 0.3 K/W.

Fig.15 Input impedance as a function of frequency Fig.16 Load impedance as a function of frequency
(series components); typical values. (series components); typical values.

MGP179
40
handbook, halfpage
Gp
(dB)

30

20
handbook, halfpage

10

Zi ZL MBA379

0
20 40 60 80 100 120
f (MHz)

Class-B operation; VDS = 28 V; IDQ = 50 mA;

PL = 30 W; Th = 25 °C; Rth mb-h = 0.3 K/W.

Fig.18 Power gain as a function of frequency;

Fig.17 Definition of MOS impedance. typical values.

2003 Sep 02 11
Philips Semiconductors Product specification

VHF power MOS transistor BLF245

BLF245 scattering parameters

VDS = 12.5 V; ID = 50 mA; note 1

s11 s21 s12 s22

f (MHz)
|s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ
5 0.91 −48.3 25.72 147.1 0.03 57.9 0.92 −47.8
10 0.80 −81.4 19.43 125.8 0.05 36.8 0.81 −81.3
20 0.71 −116.7 11.79 102.4 0.06 15.0 0.71 −115.5
30 0.68 −132.3 8.04 89.7 0.06 3.3 0.69 −131.1
40 0.69 −140.3 5.97 80.8 0.06 −4.4 0.69 −139.0
50 0.71 −145.2 4.67 73.6 0.06 −10.2 0.71 −143.8
60 0.73 −148.6 3.76 67.5 0.05 −14.8 0.73 −147.2
70 0.75 −151.1 3.10 62.4 0.05 −18.4 0.75 −149.9
80 0.77 −153.1 2.61 57.9 0.05 −21.3 0.77 −152.1
90 0.79 −155.1 2.24 53.7 0.04 −23.8 0.79 −154.2
100 0.81 −157.3 1.94 49.8 0.04 −25.9 0.81 −156.1
125 0.84 −161.9 1.39 41.2 0.03 −28.0 0.85 −160.1
150 0.87 −165.0 1.04 35.4 0.02 −23.3 0.88 −163.4
175 0.91 −167.9 0.81 30.8 0.01 −8.4 0.91 −166.3
200 0.92 −171.0 0.65 26.6 0.01 22.4 0.92 −168.9
250 0.94 −175.5 0.44 21.6 0.02 72.1 0.95 −173.3
300 0.95 −179.8 0.32 19.2 0.03 83.0 0.96 −176.8
350 0.96 176.9 0.24 19.7 0.04 86.1 0.97 −179.8
400 0.96 173.5 0.19 22.1 0.05 86.1 0.97 177.5
450 0.97 170.6 0.16 26.1 0.06 86.2 0.97 174.9
500 0.97 167.8 0.14 31.6 0.08 84.7 0.98 172.6
600 0.96 162.4 0.13 43.5 0.10 82.6 0.98 168.4
700 0.96 157.2 0.13 52.9 0.12 80.0 0.97 164.4
800 0.94 152.4 0.14 58.9 0.13 77.9 0.97 160.6
900 0.95 147.8 0.16 63.1 0.15 74.4 0.95 157.1
1000 0.95 142.7 0.18 68.2 1.70 40.5 3.52 46.0

Note
1. For more extensive s-parameters see internet:
http://www.semiconductors.philips.com/markets/communications/wirelesscommunication/broadcast

2003 Sep 02 12
Philips Semiconductors Product specification

VHF power MOS transistor BLF245

BLF245 scattering parameters

VDS = 28 V; ID = 50 mA; note 1

s11 s21 s12 s22

f (MHz)
|s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ
5 0.95 −40.5 27.84 152.9 0.02 63.8 0.93 −35.8
10 0.86 −71.3 22.60 133.3 0.04 44.4 0.83 −64.1
20 0.77 −108.6 14.77 109.1 0.05 21.7 0.69 −97.8
30 0.73 −126.8 10.37 95.5 0.05 9.1 0.65 −115.5
40 0.73 −136.8 7.81 86.2 0.05 1.0 0.64 −125.2
50 0.74 −142.9 6.17 78.8 0.05 −5.0 0.65 −131.3
60 0.75 −147.1 5.01 72.7 0.05 −9.6 0.67 −135.7
70 0.76 −150.0 4.17 67.5 0.05 −13.3 0.69 −139.1
80 0.78 −152.3 3.54 63.0 0.04 −16.3 0.72 −142.0
90 0.80 −154.5 3.06 58.8 0.04 −18.8 0.74 −144.6
100 0.81 −156.8 2.66 54.7 0.04 −20.9 0.76 −146.9
125 0.84 −161.5 1.93 46.0 0.03 −23.2 0.81 −152.0
150 0.87 −164.5 1.46 39.8 0.02 −18.9 0.84 −156.1
175 0.90 −167.4 1.15 34.7 0.01 −5.0 0.87 −159.7
200 0.91 −170.5 0.93 30.1 0.01 23.3 0.89 −162.9
250 0.93 −175.0 0.63 23.9 0.02 72.9 0.93 −168.1
300 0.95 −179.3 0.46 20.1 0.03 84.5 0.94 −172.4
350 0.96 177.3 0.35 18.8 0.04 87.7 0.96 −175.9
400 0.96 173.9 0.27 19.1 0.05 87.6 0.96 −179.1
450 0.97 171.0 0.22 20.9 0.06 87.6 0.97 178.1
500 0.96 168.1 0.19 24.2 0.07 86.0 0.97 175.5
600 0.96 162.7 0.16 34.0 0.10 83.7 0.97 170.8
700 0.96 157.5 0.15 43.8 0.11 81.1 0.97 166.5
800 0.94 152.4 0.15 51.6 0.13 78.8 0.97 162.5
900 0.95 148.1 0.16 57.8 0.15 75.2 0.95 158.8
1000 0.95 142.9 0.18 64.3 1.92 53.7 4.01 59.9

Note
1. For more extensive s-parameters see internet:
http://www.semiconductors.philips.co/.markets/communications/wirelesscommunication/broadcast

2003 Sep 02 13
Philips Semiconductors Product specification

VHF power MOS transistor BLF245

PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads SOT123A

A
F

D1
q C
U1 B

w2 M C M
c
H
b
4 3
α A

p U2 U3

1 w1 M A M B M

2
H

0 5 10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT A b c D D1 F H p Q q U1 U2 U3 w1 w2 α

7.47 5.82 0.18 9.73 9.78 2.72 20.71 3.33 4.63 24.87 6.48 9.78
mm 18.42 0.25 0.51
6.37 5.56 0.10 9.47 9.42 2.31 19.93 3.04 4.11 24.64 6.22 9.39
45°
0.294 0.229 0.007 0.383 0.385 0.107 0.815 0.131 0.182 0.980 0.255 0.385
inches 0.725 0.010 0.020
0.251 0.219 0.004 0.373 0.371 0.091 0.785 0.120 0.162 0.970 0.245 0.370

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

SOT123A 99-03-29

2003 Sep 02 14
Philips Semiconductors Product specification

VHF power MOS transistor BLF245

DATA SHEET STATUS

DATA SHEET PRODUCT

LEVEL DEFINITION
STATUS(1) STATUS(2)(3)
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

DEFINITIONS DISCLAIMERS
Short-form specification  The data in a short-form Life support applications  These products are not
specification is extracted from a full data sheet with the designed for use in life support appliances, devices, or
same type number and title. For detailed information see systems where malfunction of these products can
the relevant data sheet or data handbook. reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
Limiting values definition  Limiting values given are in
for use in such applications do so at their own risk and
accordance with the Absolute Maximum Rating System
agree to fully indemnify Philips Semiconductors for any
(IEC 60134). Stress above one or more of the limiting
damages resulting from such application.
values may cause permanent damage to the device.
These are stress ratings only and operation of the device Right to make changes  Philips Semiconductors
at these or at any other conditions above those given in the reserves the right to make changes in the products -
Characteristics sections of the specification is not implied. including circuits, standard cells, and/or software -
Exposure to limiting values for extended periods may described or contained herein in order to improve design
affect device reliability. and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information  Applications that are
communicated via a Customer Product/Process Change
described herein for any of these products are for
Notification (CPCN). Philips Semiconductors assumes no
illustrative purposes only. Philips Semiconductors make
responsibility or liability for the use of any of these
no representation or warranty that such applications will be
products, conveys no licence or title under any patent,
suitable for the specified use without further testing or
copyright, or mask work right to these products, and
modification.
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2003 Sep 02 15
Philips Semiconductors – a worldwide company

Contact information

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For sales offices addresses send e-mail to: [email protected].

© Koninklijke Philips Electronics N.V. 2003 SCA75

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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Printed in The Netherlands 613524/04/pp16 Date of release: 2003 Sep 02 Document order number: 9397 750 11585