The document contains an assignment sheet with 6 questions related to semiconductor physics. The questions cover topics like calculating carrier concentrations based on Fermi levels and densities of states, finding intrinsic carrier concentrations, and determining if a semiconductor is n-type or p-type.
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Assignment Sheet Module 8
The document contains an assignment sheet with 6 questions related to semiconductor physics. The questions cover topics like calculating carrier concentrations based on Fermi levels and densities of states, finding intrinsic carrier concentrations, and determining if a semiconductor is n-type or p-type.
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Assignment Sheet Module 8
1. Estimate the temperature at which there is one percent probability that a
state with energy 0.5 eV above the fermi energy will be occupied by an electron. [Hint: given f(ε ) = 0.01] Ans: T =1264 K 2. Find the electron concentration in conduction band at 300 K when effective density of states NC = 2.8 ×1019 /cm3 and Ef is 0.25 eV below EC. Ans: 1.8× 1015cm-3 3. The effective density of states in VB at 300K is NV = 1.04 ×1019cm -3. Find the hole concentration in VB at 400K when Ef is 0.27eV above EV. Ans: 6.43×1015cm-3 4. For GaAs semiconductor, NC (300K) = 4.7 ×1017 cm-3 , NV (300K)= 7×1018 cm-3 and band gap Eg = 1.42 eV. Find the intrinsic carrier concentration at 300K. Ans: 2.26×106 /cm3 5. For a semiconductor, if effective mass of electron and hole are 1.08m0 and 0.56mo respectively, then find the difference of intrinsic fermi level and midgap energy ( Efi - Emidgap). 6. For Si, bandgap is 1.12 eV and Fermi energy is 0.25 eV below conduction band. Find the thermal equilibrium electron &hole concentrations. Given NC = 2.8 ×1019 /cm3, NV = 1.04 ×1019cm -3.Is it a p- type or n-type semiconductor? Ans: no = 1.8×1015/cm3, po = 2.7×104 /cm3