Scribd
Upload
18 views4 pages

Lab8 Field Effect Transistor Characteristics1588857284

Uploaded by

badalabhinav10
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
18 views4 pages

Lab8 Field Effect Transistor Characteristics1588857284

Uploaded by

badalabhinav10
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 4

Kathmandu University

Department of Electrical and Electronics Engineering


ANALOG ELECTRONICS LABORATORY WORK

EXPERIMENT 8: MOS Field Effect Transistor Characteristics

Objectives: To understand E-MOS characteristics and design a simple inverter


and amplifier using an N-MOS

Software
Multisim 8

Theory:
In the NE-MOS of fig 1, when vGS is less than vt , the drain current i D is zero
irrespective of the applied drain potential because of two diodes connected in
back to back fashion. When vGS is higher than vt , the channel gets induced and
maintains uniform depth for small v DS (less than 50 mV). The uniform channel is
shown by dotted line in fig 1. MOS acts as a linear resistor whose resistivity is
controlled by the overdrive voltage. When v DS is increased, uniformity of channel
depth is lost at the drain end and the channel gets completely blocked
when VDS = VGS − Vt .
VDS < VGS − Vt (Triode Region, VCR region)
VDS ≥ VGS − Vt (Saturation Region, Linear amplification region)
The volt ampere characteristic of E-MOS in triode region is given by (1) and in
saturation region is given by (2).
W 1 2
i D = K n'  (vGS − vt )v DS − v DS  (1)
L 2 
1
i D = K n'
2
[W
L
]
(vGS − vt ) 2 (2)

The ratio W / L is called the aspect ratio of MOSFET. K n' = µ n C ox .

Fig: 1
VTC of NMOS Inverter
The VTC of NMOS inverter in fig 4 is shown in fig 2. In the region XA, MOS is in
the cut-off region. MOS enters saturation in AQB and the output voltage falls by
square law relationship given by (3).
1 W
vO = VDD − K n' (v I − vt ) 2 R D (3)
2 L
Gain of MOSFET in AQB is given by − g m R D , where g m = K n' (W / L)VOV . We have
neglected the channel length modulation effect. For small signal operation
v gs around the quiescent should be << 2VOV.
In BC, MOS operates as almost linear resistor. The output voltage falls as given
by (4).
rDS
vO = VDD (4)
rDS + RD

Fig: 2
Volt Ampere Characteristics
Procedure
1. Connect the circuit as shown in fig 3 (a). Set 3TEN Virtual MOSFET
parameters as, W=10um and L=1um, VTO=0.7, KP=100e-6.
2. Complete table 1.
VD Operating ID ID
Region
L=1 L=0.5
0.5
0.9
3
Table: 1
(a) (b)
Fig: 3
3. Connect the circuit as shown in fig 3 (b). W=10um and L=10um, VTO=1,
KP=1e-3.
4. Complete table 2.While calculating theoretical values assume that the
MOSFET is working in the saturation region.
Result VG ID VS VGS VD VDS IG IS
Theoretical
Software
Table: 2
MOS Resistive Switching Characteristics

Fig: 4
Procedure
1. Connect the circuit as shown in fig 4. W=10um and L=10um, VTO=1,
KP=1e-3.
2. Set the FG as 1 kHz, 5 V amplitude with 5 V offset, sine.
3. Connect CH1 of OSC to input and CH2 to output. See in YT mode the
switching characteristics of MOSFET. Use DC coupling mode.
4. Change the oscilloscope display format to XY mode. The VTC will be seen
like as shown in fig 5.

Fig: 5
5. With reference to fig 5 and fig 2 complete table 3.
Result X A VIB VOB VOC Q
Theoretical
Software
Q should be selected to give maximum signal swing @ the output
Table: 3
MOS Amplifier Characteristics
Procedure
1. Remove FG and Oscilloscope from fig 4.
2. Give 1.816 V as the gate potential.
3. Complete table 4.
Result VDSQ IDQ
Theoretical
Software
Table: 4
Region of Operation: ________________
Overdrive Voltage: __________________
4. Set the FG as 1 kHz, 1 mV amplitude with 1.816 V offset, sine.
5. Use AC coupling mode of oscilloscope. CH1=Input, CH2=Output.
6. Find the gain of amplifier.
7. Sketch amplifier characteristics in XY mode.

You might also like