CRTD084NE6N

华润微电子(重庆)有限公司 Trench N-MOSFET 65V, 7.1mΩ, 85A

Features Product Summary

• Uses CRM(CQ) advanced Trench MOS technology VDS 65V
• Extremely low on-resistance RDS(on) RDS(on) typ. 7.1mΩ
• Excellent QgxRDS(on) product(FOM) ID 85A
• Qualified according to JEDEC criteria
100% DVDS Tested
Applications
100% Avalanche Tested
• Motor control and drive
• Battery management
• UPS (Uninterrupible Power Supplies)

Package Marking and Ordering Information

Part # Marking Package Packing Reel Size Tape Width Qty

CRTD084NE6N CRTD084NE6N TO-252 Reel N/A N/A 2500pcs

Absolute Maximum Ratings

Parameter Symbol Value Unit
Drain-source voltage VDS 65 V
Continuous drain current
TC = 25°C (Silicon limit) 85
ID A
TC = 25°C (Package limit) 87
TC = 100°C (Silicon limit) 54
Pulsed drain current (TC = 25°C, tp limited by Tjmax) ID pulse 340 A

Avalanche energy, single pulse (L=0.5mH, Rg=25Ω) EAS 100 mJ

Gate-Source voltage VGS ±25 V

Power dissipation (TC = 25°C) Ptot 98 W

Operating junction and storage temperature Tj , T stg -55...+150 °C

Soldering temperature, wave soldering only allowed at leads
Tsold 260 °C
(1.6mm from case for 10s)

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 CRTD084NE6N
华润微电子(重庆)有限公司 Trench N-MOSFET 65V, 7.1mΩ, 85A

Thermal Resistance
Parameter Symbol Max Unit
Thermal resistance, junction – case. RthJC 1.27
°C/W
Thermal resistance, junction – ambient(min. footprint) RthJA* 102

Electrical Characteristic (at Tj = 25 °C, unless otherwise specified)

Value
Parameter Symbol Unit Test Condition
min. typ. max.
Static Characteristic
Drain-source breakdown
BVDSS 65 - - V VGS=0V, ID=250uA
voltage

Gate threshold voltage VGS(th ) 2 3 4 V VDS=VGS,ID=250uA

VDS=65V,VGS=0V
Zero gate voltage drain
IDSS - 0.05 1 µA Tj=25°C
current
- - 100 Tj=150°C
Gate-source leakage
IGSS - ±10 ±100 nA VGS=±25V,VDS=0V
current
VGS=10V, ID=40A,
Drain-source on-state
RDS(on) - 7.1 8.4 mΩ Tj=25°C
resistance
- 13.5 16.0 Tj=150°C

Transconductance gfs - 103 - S VDS=5V,ID=40A

Dynamic Characteristic
Input Capacitance Ciss - 3139 -

Output Capacitance Coss - 307 - VGS=0V, VDS=32V,

pF
f=1MHz
Reverse Transfer
Crss - 194 -
Capacitance
Gate Total Charge QG - 72 -
VGS=10V, VDS=32V,
Gate-Source charge Qgs - 18 - nC
ID=40A, f=1MHz
Gate-Drain charge Qgd - 26 -

Turn-on delay time td(on) - 13 -

Rise time tr - 75 - VGS=10V, VDD=32V,

ns
Turn-off delay time td(off) - 46 - RG_ext=2.7Ω, ID=40A

Fall time tf - 73 -
VGS=0V, VDS=0V,
Gate resistance RG - 2.4 - Ω
f=1MHz

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 CRTD084NE6N
华润微电子(重庆)有限公司 Trench N-MOSFET 65V, 7.1mΩ, 85A

Body Diode Characteristic

Value
Parameter Symbol Unit Test Condition
min. typ. max.
Body Diode Forward
VSD - 0.9 1.3 V VGS=0V,ISD=40A
Voltage
Body Diode Continuous
IS 85 A TC = 25°C
Forward Current
Body Diode Reverse
trr - 36 - ns
Recovery Time IF=40A, dI/dt=100A/µ
Body Diode Reverse s
Qrr - 43 - nC
Recovery Charge

*The value of RthJA is measured by placing the device in a still air box which is one cubic foot.

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 CRTD084NE6N
华润微电子(重庆)有限公司 Trench N-MOSFET 65V, 7.1mΩ, 85A

Typical Performance Characteristics

Fig 1: Output Characteristics Fig 2: Transfer Characteristics

160 200

Tj=25°C VDS=5V
10V 6.0V
128 160
5.5V
96 120
ID (A)

ID (A)
64 80
VGS=5.0V 150°C
32 40
4.0V 25°C

0 0
0 1 2 3 4 5 2 3 4 5 6 7
VDS (V) VGS (V)

Fig 3: Rds(on) vs Drain Current and Fig 4: Rds(on) vs Gate Voltage

Gate Voltage 24
15

Tj=25°C ID=40A
13 20
RDS(on) (mΩ)
RDS(on) (mΩ)

11 16 150°C

9 VGS=7V 12

VGS=10V 25°C
7 8

5 4
0 40 80 120 160 200 4 5 6 7 8 9 10
ID (A) VGS (V)

Fig 5: Rds(on) vs. Temperature Fig 6: Capacitance Characteristics

2.2 100000
VGS=10V
2.0
ID=40A
C - Capacitance (PF)

1.8 10000
RDS(on)_Normalized

1.6 Ciss
1.4
1000
1.2
Coss
1.0
100 Crss
0.8
VGS=0V
0.6
f=1MHz
0.4 10

-50 -25 0 25 50 75 100 125 150 0 13 26 39 52 65

Tj - Junction Temperature (°C) VDS (V)

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 CRTD084NE6N
华润微电子(重庆)有限公司 Trench N-MOSFET 65V, 7.1mΩ, 85A

Fig 8: Body-diode Forward

Fig 7: Gate Charge Characteristics
Characteristics
10 1000

IS - Diode Current(A)
8

VDS=32V
VGS (V)

100
6
ID=40A
150˚C
4 25˚C
10

0 1

0 14 28 42 56 70 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

Qg (nC) VSD - Diode Forward Voltage(V)

Fig 9: Power Dissipation Fig 10: Drain Current Derating

120 90

80
100
70

80 60
ID (A)
Ptot (W)

50
60
40

40 30

20 VGS≥10V
20
10

0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150 175
Tc - Case Temperature (°C) Tc - Case Temperature (°C)

Fig 11: Safe Operating Area

1000

1us
Limited by
100 Rds(on) 10us

100us
ID (A)

10 1ms

10ms
DC
1
Single pulse
Tc=25˚C
0.1
0.1 1 10 100
VDS (V)

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 CRTD084NE6N
华润微电子(重庆)有限公司 Trench N-MOSFET 65V, 7.1mΩ, 85A

Fig 12: Max. Transient Thermal Impedance

1
D=0.5

0.2

0.1 0.1
ZthJC (˚C/W)

0.05
0.02
0.01
0.01 Single pulse

Duty factor D=t1/t2

TJM-TC=PDM*ZthJC(t)

0.001
1E-06 1E-05 0.0001 0.001 0.01 0.1
tp (sec)

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 CRTD084NE6N
华润微电子(重庆)有限公司 Trench N-MOSFET 65V, 7.1mΩ, 85A

Test Circuit & Waveform

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 CRTD084NE6N
华润微电子(重庆)有限公司 Trench N-MOSFET 65V, 7.1mΩ, 85A

Package Outline: TO-252

b1

Recommended Land Pattern

Dimensions In Millimeters Dimensions In Inches

Symbol
Min. Max. Min. Max.
A 2.15 2.45 0.085 0.096
A1 0.00 0.15 0.000 0.006
A2 0.76 1.36 0.030 0.054
b 0.60 0.91 0.024 0.036
b1 0.65 1.15 0.026 0.045
b2 5.00 5.64 0.197 0.222
c 0.45 0.61 0.018 0.024
c1 0.36 0.66 0.014 0.026
D 5.80 6.30 0.228 0.248
D1 5.00 6.00 0.197 0.236
e 2.29 BSC. 0.090 BSC.
E 6.30 6.90 0.248 0.272
E1 4.55 5.30 0.179 0.209
H 9.40 10.48 0.370 0.413
L 1.18 1.70 0.046 0.067
L1 2.92 REF 0.115 REF
L2 0.36 0.66 0.014 0.026
L3 0.72 1.35 0.028 0.053
L4 0.60 1.20 0.024 0.047

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 CRTD084NE6N
华润微电子(重庆)有限公司 Trench N-MOSFET 65V, 7.1mΩ, 85A

Revision History
Revison Date Major changes
1.0 2018/4/17 Release of formal version
Increase the environmental labeling, IS, Tsold, IDSS/RDS(on)
test values at the Tj=150°C and IGSS test values at VGS=-
25V;Update Ciss/Coss/Crss test values;Update trr/Qrr test
values;Update gfs test value;Update Rg test value;Update
2.0 2019/5/13
Qg/Qgs/Qgd test condition VDS from 50V to 32V;Update
td(on)/tr/td(off)/tf test condition VDD from 20V to 32V;Update
Fig2/Fig3/Fig4/Fig6/Fig7/Fig8 of Typical Performance
Characteristics;Update Package Outline

Disclaimer
Unless otherwise specified in the datasheet, the product is designed and qulified as a standard commercial
product and is not intended for use in applications that require extraordinary levels of quality and reliability,
such as automotive, aviation/aerospace and life-support devices or systems.

Any and all semicondutor products have certain probability to fail or malfunction, which may result in personal
injury, death or property damage. Customer are solely responsible for providing adequate safe measures when
design their systems.

CRM(CQ) reserves the right to improve product design, function and reliability without notice.

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