Max. Marks : 180 Marking Scheme : (+4) for correct & (–1) for incorrect answer Time : 60 min.
INSTRUCTIONS : This Daily Practice Problem Sheet contains 45 MCQs. For each question only one option is correct. Darken the correct circle/ bubble in the Response Grid provided on each page.
1. A change of 8.0 mA in the emitter current bring a change of A
7.9 mA in the collector current. The values of parameters a B and b are respectively (a) 0.99, 90 (b) 0.96,79 (c) 0.97,99 (d) 0.99,79 2. A pure semiconductor has equal electron and hole V concentration of 1016 m–3. Doping by indium increases Lamp number of hole concentration n h to 5 × 1022 m–3. Then, the value of number of electron concentration n e in the doped (a) NAND gate (b) OR gate semiconductor is (c) NOR gate (d) AND gate (a) 106/m3 (b) 1022/m3 6. In an unbiased p-n junction, holes diffuse from the p-region (c) 2 × 106/m3 (d) 2 × 109/m3 to n-region because of 3. For LED’s to emit light in visible region of electromagnetic (a) the potential difference across the p-n junction light, it should have energy band gap in the range of: (b) the attraction of free electrons of n-region (a) 0.1 eV to 0.4 eV (b) 0.5 eV to 0.8 eV (c) the higher hole concentration in p-region than that in (c) 0.9 eV to 1.6 eV (d) 1.7 eV to 3.0 eV n-region (d) the higher concentration of electrons in the n-region 4. A common emitter amplifier has a voltage gain of 50, an input than that in the p-region impedance of 100W and an output impedance of 200W. The 7. A silicon diode has a threshold voltage of 0.7 V. If an input power gain of the amplifier is voltage given by 2 sin(pt) is supplied to a half wave rectifier (a) 1000 (b) 1250 (c) 100 (d) 500 circuit using this diode, the rectified output has a peak 5. Which logic gate with inputs A and B performs the same value of operation as that performed by the following circuit? (a) 2 V (b) 1.4 V (c) 1.3 V (d) 0.7 V
RESPONSE GRID 1. 2. 3. 4. 5. 6. 7. Space for Rough Work t.me/Ebooks_Encyclopedia27. t.me/Magazines4all
P-110 DPP/ CP28
8. The current gain for a transistor working as common-base (a) A B Y (b) A B Y amplifier is 0.96. If the emitter current is 7.2 mA, then the 0 0 1 0 0 0 base current is 0 1 0 0 1 0 (a) 0.29 mA (b) 0.35 mA (c) 0.39 mA (d) 0.43 mA 1 0 0 1 0 1 9. In a npn transistor 1010 electrons enter the emitter in 1 1 1 1 1 0 10–6 s. 4% of the electrons are lost in the base. The current (c) (d) A B Y A B Y transfer ratio will be 0 0 1 0 0 1 (a) 0.98 (b) 0.97 (c) 0.96 (d) 0.94 0 1 0 0 1 1 10. Assuming that the silicon diode having resistance of 1 0 1 1 0 0 20 W, the current through the diode is (knee voltage 0.7 V) 1 1 0 1 1 0 R = 180W 18. The intrinsic conductivity of germanium at 27° is 2.13 mho m–1 and mobilities of electrons and holes are 0.38 and 0.18 2V 0V m2V–1s–1 respectively. The density of charge carriers is (a) 0 mA (b) 10 mA (c) 6.5 mA (d) 13.5 mA (a) 2.37 × 1019 m–3 (b) 3.28 × 1019 m–3 11. Transfer characteristics [output 19 (c) 7.83 × 10 m –3 (d) 8.47 × 1019 m–3 V I II voltage (V0) vs input voltage (Vi)] 0 III 19. The logic circuit shown below has the input waveforms for a base biased transistor in CE ‘A’ and ‘B’ as shown. Pick out the correct output configuration is as shown in the waveform figure. For using transistor as a A switch, it is used Vi Y (a) in region III (b) both in region (I) and (III) B (c) in region II Input A (d) in region (I) 12. A half-wave rectifier is being used to rectify an alternating voltage of frequency 50 Hz. The number of pulses of rectified Input B current obtained in one second is (a) 50 (b) 25 (c) 100 (d) 2000 13. A diode having potential difference 0.5 V across its junction Output is which does not depend on current, is connected in series with resistance of 20W across source. If 0.1 A current passes (a) through resistance then what is the voltage of the source? (a) 1.5 V (b) 2.0 V (c) 2.5 V (d) 5 V (b) 14. In common emitter amplifier, the current gain is 62. The collector resistance and input resistance are 5 kW an 500W respectively. If the input voltage is 0.01V, the output voltage is (c) (a) 0.62 V (b) 6.2 V (c) 62 V (d) 620 V 15. On doping germanium with donor atoms of density 1017 cm–3 its conductivity in mho/cm will be (d) [Given : me = 3800 cm2/V–s and ni = 2.5 × 1013 cm–13] 20. Pure Si at 500K has equal number of electron (ne) and hole (nh) (a) 30.4 (b) 60.8 (c) 91.2 (d) 121.6 concentrations of 1.5 × 1016 m–3. Doping by indium increases 16. The voltage gain of an amplifier with 9% negative feedback nh to 4.5 × 1022 m–3. The doped semiconductor is of is 10. The voltage gain without feedback will be (a) n–type with electron concentration ne = 5 × 1022 m–3 (a) 90 (b) 10 (c) 1.25 (d) 100 (b) p–type with electron concentration ne = 2.5 ×1010 m–3 17. A system of four gates is set up as shown. The ‘truth table’ (c) n–type with electron concentration ne = 2.5 × 1023 m–3 corresponding to this system is : (d) p–type having electron concentration n e = 5 × 109 m–3 A 21. Which of the following statements is incorrect? (a) The resistance of intrinsic semiconductors decrease with increase of temperature Y (b) Doping pure Si with trivalent impurities give p-type semiconductors (c) The majority carriers in n-type semiconductors are holes B (d) A p-n junction can act as a semiconductor diode
8. 9. 10. 11. 12.
RESPONSE 13. 14. 15. 16. 17. GRID 18. 19. 20. 21. Space for Rough Work t.me/Ebooks_Encyclopedia27. t.me/Magazines4all
DPP/ CP28 22. The relation between number of free electrons (n) in a (c) number of electrons and holes remain same semiconductor and temperature (T) is given by (d) number of electrons and holes increases equally. (a) n µ T (b) n µ T2 (c) n µ T (d) n µ T3/2 30. The ratio of electron and hole currents in a semiconductor 23. If a PN junction diode of depletion layer width W and barrier is 7/4 and the ratio of drift velocities of electrons and holes height V0 is forward biased, then is 5/4, then the ratio of concentrations of electrons and holes (a) W increases, V0 decreases will be (b) W decreases, V0 increases (a) 5/7 (b) 7/5 (c) 25/49 (d) 49/25 (c) both W and V0 increase 31. C and Si both have same lattice structure, having 4 bonding (d) both W and V0 decrease electrons in each. However, C is insulator whereas Si is 24. The circuit has two oppositively connected ideal diodes in intrinsic semiconductor. This is because : parallel. The current flowing in the circuit is (a) In case of C the valence band is not completely filled at 4W absolute zero temperature. (b) In case of C the conduction band is partly filled even at D1 D2 absolute zero temperature. 12V (c) The four bonding electrons in the case of C lie in the 3W 2W second orbit, whereas in the case of Si they lie in the third. (a) 1.71 A (b) 2.00 A (c) 2.31 A (d) 1.33 A (d) The four bonding electrons in the case of C lie in the 25. For a transistor amplifier in common emitter configuration third orbit, whereas for Si they lie in the fourth orbit. for load impedanceof 1kW (hfe = 50 and h0e = 25) the current 32. Which one of the following represents forward bias diode ? gain is R (a) –4V –3V (a) – 24.8 (b) – 15.7 (c) – 5.2 (d) – 48.78 26. A PN-junction has a thickness of the order of –2V R (b) +2V (a) 1 cm (b) 1mm (c) 10–6 m (d) 10–12 cm 27. A working transistor with its three legs marked P, Q and R is 3V R 5V tested using a multimeter. No conduction is found between (c) P and Q. By connecting the common (negative) terminal of the multimeter to R and the other (positive) terminal to P or 0V R –2V (d) Q, some resistance is seen on the multimeter. Which of the following is true for the transistor? 33. An oscillator is nothing but an amplifer with (a) It is an npn transistor with R as base (a) positive feedback (b) negative feedback (b) It is a pnp transistor with R as base (c) large gain (d) no feedback (c) It is a pnp transistor with R as emitter 34. The current gain in the common emitter mode of a transistor (d) It is an npn transistor with R as collector is 10. The input impedance is 20kW and load of resistance is 28. If in a p-n junction, a square input signal of 10 V is applied 100kW. The power gain is as shown, then the output across RL will be (a) 300 (b) 500 (c) 200 (d) 100 +5V 35. The input signal given to a CE amplifier having a voltage RL æ pö gain of 150 is Vi = 2 cos çè15t + ÷ø . The corresponding 3 –5V output signal will be : 10V 2p æ 5p ö (a) (b) (a) 75cos æç15t + ö÷ (b) 2cos ç15t + ÷ –5V è 3ø è 6ø æ 4p ö p 5V (c) 300cos ç15t + ÷ (d) 300cos æç15t + ö÷ (c) (d) è 3 ø è 3ø –10V 36. To use a transistor as an amplifier 29. When n-type semiconductor is heated (a) the emitter base junction is forward biased and the (a) number of electrons increases while that of holes base collector junction is reverse biased decreases (b) no bias voltage is required (b) number of holes increases while that of electrons (c) both junctions are forward biased decreases (d) both junctions are reverse biased.
22. 23. 24. 25. 26.
RESPONSE 27. 28. 29. 30. 31. GRID 32. 33. 34. 35. 36. Space for Rough Work t.me/Ebooks_Encyclopedia27. t.me/Magazines4all
DPP/ CP28 37. A piece of copper and another of germanium are cooled I (mA) from room temperature to 77K. The resistance of (a) copper increases and germanium decreases 800 (b) each of them decreases (c) each of them increases (d) copper decreases and germanium increases 400 38. A d.c. battery of V volt is connected to a series combination of a resistor R and an ideal diode D as shown in the figure 2 2.1 V (volt) below. The potential difference across R will be (a) 1 W (b) 0.25 W (c) 0.5 W (d) 5 W R D 42. The circuit diagram shows a logic combination with the states of outputs X, Y and Z given for inputs P, Q, R and S all at state 1. When inputs P and R change to state 0 with inputs Q and S still at 1, the states of outputs X, Y and Z change to V P(1) X(1) Q(1) (a) 2V when diode is forward biased (b) Zero when diode is forward biased Z(0) (c) 5V when diode is reverse biased R(1) Y(1) (d) 6V when diode is forward biased S(1) 39. The current gain for a transistor working as common-base amplifier is 0.96. If the emitter current is 7.2 mA, then the (a) 1, 0, 0 (b) 1, 1, 1 (c) 0, 1, 0 (d) 0, 0, 1 base current is 43. The following configuration of gate is equivalent to (a) 0.29 mA (b) 0.35 mA (c) 0.39 mA (d) 0.43 mA A OR 40. In the circuit given below, A and B represent two inputs and B C represents the output. Y A AND NAND C (a) NAND gate (b) XOR gate (c) OR gate (d) NOR gate B 44. A p-n photodiode is made of a material with a band gap of 2.0 eV. The minimum frequency of the radiation that can be The circuit represents absorbed by the material is nearly (a) NOR gate (b) AND gate (a) 10 × 1014 Hz (b) 5 ×1014 Hz (c) 1 × 10 Hz14 (d) 20 × 1014 Hz (c) NAND gate (d) OR gate 41. The I-V characteristic of a P-N junction diode is shown 45. The average value of output direct current in a full wave below. The approximate dynamic resistance of the p-n rectifier is junction when a forward bias voltage of 2 volt is applied is (a) I0/p (b) I0/2 (c) p I0/2 (d) 2 I0/p
RESPONSE 37. 38. 39. 40. 41.
GRID 42. 43. 44. 45.
DAILY PRACTICE PROBLEM DPP CHAPTERWISE CP28 - PHYSICS
Total Questions 45Total Marks 180 Attempted Correct Incorrect Net Score Cut-off Score 50 Qualifying Score 70 Success Gap = Net Score – Qualifying Score Net Score = (Correct × 4) – (Incorrect × 1) Space for Rough Work
