SUD50N04-07L

Vishay Siliconix
www.DataSheet4U.com
New Product

N-Channel 40-V (D-S), 175_C MOSFET

FEATURES
PRODUCT SUMMARY D TrenchFETr Power MOSFETS
V(BR)DSS (V) rDS(on) (W) ID (A)c D 175_C Junction Temperature
0.0074 @ VGS = 10 V 65
D Low Threshold
40
0.011 @ VGS = 4.5 V 54 APPLICATIONS
D Motor Control
D Automotive
- 12-V Boardnet

TO-252

Drain Connected to Tab

G D S

Top View
S
Ordering Information: SUD50N04-07L N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 40
V
Gate-Source Voltage VGS
20
TC = 25_C 65c
Continuous Drain Current (TJ = 175_C) ID
TC = 100_C 46c
A
Pulsed Drain Current IDM 100
Avalanche Current IAR 40
Repetitive Avalanche Energya L = 0.1 mH EAR 80 mJ
Power Dissipation TC = 25_C PD 65 W
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
t  10 sec 18 22
ti t A bi tb
JJunction-to-Ambient RthJA
Steady State 40 50 C/W
_C/W
Junction-to-Case RthJC 1.9 2.3

Notes:
a. Duty cycle  1%.
b. Surface mounted on 1” FR4 board.
c. Based on maximum allowable Junction Temperature. Package limitation current is 50 A.

Document Number: 72344 www.vishay.com

S-32079—Rev. B, 13-Oct-03 1
SUD50N04-07L
Vishay Siliconix
www.DataSheet4U.com
New Product

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40
V
Gate Threshold Voltage VGS(th) VDS = VGS, IDS = 250 mA 1 3

Gate-Body Leakage IGSS VDS = 0 V, VGS =
20 V
100 nA

VDS = 32 V, VGS = 0 V 1

Zero Gate Voltage

g Drain Current IDSS VDS = 32 V, VGS = 0 V, TJ = 125_C 50 mA
m
VDS = 32 V, VGS = 0 V, TJ = 175_C 150
On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V 65 A
VGS = 10 V, ID = 20 A 0.006 0.0074
VGS = 10 V, ID = 20 A, TJ = 125_C 0.012
On State Resistancea
Drain Source On-State
Drain-Source rDS(on)
DS( ) W
VGS = 10 V, ID = 20 A, TJ = 175_C 0.015
VGS = 4.5 V, ID = 10 A 0.0085 0.011
Forward Transconductancea gfs VDS = 15 V, ID = 15 A 20 57 S

Dynamicb
Input Capacitance Ciss 2800
Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 320 pF
Reversen Transfer Capacitance Crss 190
Total Gate Chargec Qg 50 75
Gate-Source Chargec Qgs VDS = 20 V,, VGS = 10 V,, ID = 50 A 10 nC
Gate-Drain Chargec Qgd 10
Gate Resistance Rg 2.0 W
Turn-On Delay Timec td(on) 11 20
Rise Timec tr VDD = 20 V, RL = 0.4 W 20 30
ns
Turn-Off Delay Timec td(off) ID  50 A, VGEN = 10 V, RG = 2.5 W 40 60
Fall Timec tf 15 25

Source-Drain Ciode Ratings and Characteristics (TC = 25_C)b

Continuous Current Is 43
A
Pulsed Current ISM 100
Forward Voltagea VSD IF = 30 A, VGS = 0 V 0.90 1.50 V
Reverse Recovery Time trr IF = 30 A, di/dt = 100 A/ms 30 45 ns

Notes:
a. Pulse test; pulse width  300 ms, duty cycle  2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.

www.vishay.com Document Number: 72344

2 S-32079—Rev. B, 13-Oct-03
 SUD50N04-07L
Vishay Siliconix
www.DataSheet4U.com
New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics Transfer Characteristics

100 100

VGS = 10 thru 5 V

80 80
4V
I D - Drain Current (A)

I D - Drain Current (A)

60 60

40 40
TC = 125_C

20 20
3V 25_C
- 55_C
0 0
0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Transconductance On-Resistance vs. Drain Current

150 0.016

TC = - 55_C
120 25_C
0.012
r DS(on) - On-Resistance ( Ω )
g fs - Transconductance (S)

125_C VGS = 4.5 V

90

0.008
VGS = 10 V
60

0.004
30

0 0.000
0 10 20 30 40 50 60 0 20 40 60 80 100

VGS - Gate-to-Source Voltage (V) ID - Drain Current (A)

Capacitance Gate Charge

4000 10

VDS = 20 V
V GS - Gate-to-Source Voltage (V)

3200 Ciss 8 ID = 50 A
C - Capacitance (pF)

2400 6

1600 4

800 2
Coss

Crss
0 0
0 8 16 24 32 40 0 10 20 30 40 50

VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)

Document Number: 72344 www.vishay.com

S-32079—Rev. B, 13-Oct-03 3
SUD50N04-07L
Vishay Siliconix
www.DataSheet4U.com
New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
2.0 100
VGS = 10 V
ID = 20 A
1.7
r DS(on) - On-Resistance ( Ω )

TJ = 150_C

I S - Source Current (A)

1.4
(Normalized)

TJ = 25_C
10

1.1

0.8

0.5 1
- 50 - 25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5
TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V)

THERMAL RATINGS
Maximum Avalanche and Drain Current vs.
Safe Operating Area
Case Temperature
80 200 Limited by rDS(on)
100 10 ms
70
100 ms
60
I D - Drain Current (A)
I D - Drain Current (A)

50 10
1 ms
40
Limited By Package
10 ms
30 100 ms
1 dc
20
TC = 25_C
Single Pulse
10

0 0.1
0 25 50 75 100 125 150 175 0.1 1 10 50
TC - Case Temperature (_C) VDS - Drain-to-Source Voltage (V)

2 Normalized Thermal Transient Impedance, Junction-to-Ambient

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1 0.1

0.05

0.02
Single Pulse

0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 1K

Square Wave Pulse Duration (sec)

www.vishay.com Document Number: 72344

4 S-32079—Rev. B, 13-Oct-03
 SUD50N04-07L
Vishay Siliconix
www.DataSheet4U.com
New Product

THERMAL RATINGS
2 Normalized Thermal Transient Impedance, Junction-to-Case

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1
0.1
0.02
0.05
Single Pulse

0.01
10 -4 10 -3 10 -2 10 -1 1 10 1 00

Square Wave Pulse Duration (sec)

Document Number: 72344 www.vishay.com

S-32079—Rev. B, 13-Oct-03 5