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Common Emitter Configuration

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Moiz Siddiqui
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42 views5 pages

Common Emitter Configuration

Uploaded by

Moiz Siddiqui
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Common emitter configuration

Objective:
To study input and output characteristics of a npn Bipolar Junction Transistor
(BJT) in Common-emitter configuration.
Apparatus:
BJT (BC-547B), Bread board, resistor (1KΩ, 100KΩ), connecting wires,
Ammeters, DC power supply (0‐30V) and multimeter.
Theory:
The transistor is a two junction, three terminal semiconductor device which has
three regions namely the emitter region, the base region, and the collector
region. There are two types of transistors. An npn transistor has an n type
emitter, a p type base and an n type collector while a pnp transistor has a p type
emitter, an n type base and a p type collector. The emitter is heavily doped, base
region is thin and lightly doped and collector is moderately doped and is the
largest. The current conduction in transistors takes place due to both charge
carriers- that is electrons and holes and hence they are named Bipolar Junction
Transistors (BJT).

BJTs are extensively used in all types of electronic circuits. The aim of this part of
the experiment is to familiarize you with the basic modes of operation and features
of a BJT. The BJT that you will be using in this experiment is BC 547 (the pin
diagram is shown in Fig.1), which has a typical current rating of 100 mA
(maximum). Two of the most important applications for the transistor are (1) as an
amplifier in analog electronic systems, and (2) as a switch in digital systems. Basic
Concepts The operation of the BJT is based on the principles of the pn junction. In
the npn BJT, electrons are injected from the forward-biased emitter into the thin
base region where, as minority carriers, they diffuse toward the reverse-biased
collector. Some of these electrons recombine with holes in the base region, thus
producing a small base current, IB. The remaining electrons reach the collector
where they provide the main source of carriers for the collector current, IC. Thus,
if there are no electrons injected from the emitter, there will be (almost) no
collector current and, therefore, the emitter current controls the collector current.
Combining currents, the total emitter current is given as IE = IB + IC. For normal
pnp operation, the polarity of both voltage sources must be reversed.
BJTs are used to amplify current, using a small base current to control a large
current between the collector and the emitter. This amplification is so important
that one of the most noted parameters of gain, β (or hFE), which is the ratio of
collector current to base current. When the BJT is used with the base and emitter
terminals as the input and the collector and emitter terminals as the output, the
current gain as well as the voltage gain is large. It is for this reason that this
common-emitter (CE) configuration is the most useful connection for the BJT in
electronic systems.The most important characteristics of transistor in any
configuration are input and output characteristics.
Input Characteristics: It is the curve between input current IB and input
voltage VBE constant collector emitter voltage VCE. The input characteristic
resembles a forward biased diode curve. After cut in voltage the IB increases
rapidly with small increase in VBE. It means that dynamic input resistance is small
in CE configuration. It is the ratio of change in VBE to the resulting change in base
current at constant collector emitter voltage. It is given by ΔVBE / ΔIB B.
Output Characteristics: This characteristic shows relation between collector
current IC and collector voltage for various values of base current. The change in
collector emitter voltage causes small change in the collector current for the
constant base current, which defines the dynamic resistance and is given as
ΔVCE / ΔIC at constant IB. The output characteristic of common emitter
configuration consists of three regions: Active, Saturation and Cut‐off.
Active region: In this region base‐emitter junction is forward biased and base‐
collector junction is reversed biased. The curves are approximately horizontal in
this region.
Saturation region: In this region both the junctions are forward biased.
Cut‐off: In this region, both the junctions are reverse biased. When the base
current is made equal to zero, the collector current is reverse leakage current ICEO.
The region below IB = 0 is the called the cutoff region.
PROCEDURE:
Input Characteristics
1) Make the circuit connection as shown in the circuit diagram.
2) Set the voltage VCE = 2 V and vary IB with the help of VBB and measure
VBE.
3) Set the voltage VCE = 3 V and vary IB with the help of VBB and measure
VBE.
4) Plot graph of IB v/s VBE.
5) Evaluate dynamic input resistance which is the ratio of change in VBE to the
resulting change in base current at constant collector emitter voltage. It is given by
ΔVBE / ΔIB
6) The reciprocal of the slope of the linear part of the characteristic gives the
dynamic input
resistance of the transistor.
B. Output Characteristics
1) Keep IB constant say 10 μA, vary VCE and note down the collector current IC.
2) Now keep IB = 20 μA, vary VCE and note down the collector current IC.
3) Plot graph of IB v/s VCE.
4) The change in collector emitter voltage causes small change in the collector
current for the
constant base current, which defines the dynamic output resistance and is given as
ΔVCE / ΔIC at
constant IB or the output conductance is given ∆IC/∆VCE with the IB at a constant
current.
5) Find output conductance from the slope of the linear portion of the characteristic
curves and
also find small-signal current gain which is calculated by β = ∆IC/∆IB with the
VCE at a constant
voltage.
CIRCUIT DIAGRAM:
Observation:

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