SKiiP 20 NAB 12 - SKiiP 20 NAB 12 I MiniSKiiP 2

SEMIKRON integrated
Absolute Maximum Ratings intelligent Power
Symbol Conditions 1) Values Units SKiiP 20 NAB 12
Inverter (Chopper see SKiiP 22 NAB 12) SKiiP 20 NAB 12 I 3)
VCES 1200 V 3-phase bridge rectifier +
VGES ± 20 V braking chopper +
IC Theatsink = 25 / 80 °C 16 / 11 A
ICM tp < 1 ms; Theatsink = 25 / 80 °C 32 / 22 A
3-phase bridge inverter
IF = –IC Theatsink = 25 / 80 °C 16 / 11 A
IFM = –ICM tp < 1 ms; Theatsink = 25 / 80 °C 32 / 22 A
Case M2
Bridge Rectifier
VRRM 1500 V
ID Theatsink = 80 °C 25 A
IFSM tp = 10 ms; sin. 180 °, Tj = 25 °C 370 A
I2t tp = 10 ms; sin. 180 °, Tj = 25 °C 680 A2s
Tj – 40 . . . + 150 °C
Tstg – 40 . . . + 125 °C
Visol AC, 1 min. 2500 V

Characteristics
Symbol Conditions 1) min. typ. max. Units
IGBT - Inverter
VCEsat IC = 10 A Tj = 25 (125) °C – 2,7(3,3) 3,2(3,9) V
td(on) VCC = 600 V; VGE = ± 15 V – 55 110 ns
tr IC = 10 A; Tj = 125 °C – 50 100 ns
td(off) Rgon = Rgoff = 150 Ω – 380 570 ns
tf inductive load – 80 120 ns
Eon + Eoff – 2,7 – mJ
Cies VCE = 25 V; VGE = 0 V, 1 MHz – 0,53 – nF
UL recognized file no. E63532
Rthjh per IGBT – – 1,8 K/W
IGBT - Chopper * • specification of shunts and
VCEsat IC = 15 A Tj = 25 (125) °C – 2,5(3,1) 3,0(3,7) V temperature sensor see part A
td(on) VCC = 600 V; VGE = ± 15 V – 55 110 ns • common characteristics see
tr IC = 15 A; Tj = 125 °C – 45 90 ns page B 16 – 4
td(off) Rgon = Rgoff = 82 Ω – 400 600 ns
tf inductive load – 70 100 ns 1)
Eon + Eoff – 4,0 – mJ Theatsink = 25 °C, unless
Cies VCE = 25 V; VGE = 0 V, 1 MHz – 1,0 – nF otherwise specified
2) CAL = Controlled Axial Lifetime
Rthjh per IGBT – – 1,4 K/W
Technology (soft and fast
Diode 2) - Inverter (Diode 2) - Chopper see SKiiP 22 NAB 12) recovery)
VF = VEC IF = 10 A Tj = 25 (125) °C – 2,0(1,8) 2,5(2,3) V 3)
With integrated DC and/or AC
VTO Tj = 125 °C – 1,0 1,2 V shunts
4) accuracy of pure shunt, please
rT Tj = 125 °C – 80 110 mΩ
IRRM IF = 10 A, VR = – 600 V – 12 – A note that for DC shunt no
Qrr diF/dt = – 300 A/µs – 1,8 – µC separate sensing contact is
Eoff VGE = 0 V, Tj = 125 °C – 0,4 – mJ used.
Rthjh per diode – – 2,4 K/W
Rcs(dc) 5 % 4) 16,5 mΩ
Diode - Rectifier
Rcs(ac) 1% 10 mΩ
VF IF = 25 A, Tj = 25 °C – 1,2 – V
Rthjh per diode – – 2,6 K/W
Temperature Sensor
RTS T = 25 / 100 °C 1000 / 1670 Ω
Mechanical Data
M1 case to heatsink, SI Units 2 – 2,5 Nm
Case mechanical outline see page M2
B 16 – 8
* For diagrams of the Chopper IGBT please refer to SKiiP 22 NAB 12
© by SEMIKRON 000131 B 16 – 49
Fig. 1 Typ. output characteristic, tp = 80 µs; 25 °C Fig. 2 Typ. output characteristic, tp = 80 µs; 125 °C

Tj = 125 °C Tj = 125 °C
VCE = 600 V VCE = 600 V
VGE = ± 15 V VGE = ± 15 V
RG = 150 Ω IC = 10 A

Fig. 3 Turn-on /-off energy = f (IC) Fig. 4 Turn-on /-off energy = f (RG)

ICpuls = 10 A VGE = 0 V
f = 1 MHz

Fig. 5 Typ. gate charge characteristic Fig. 6 Typ. capacitances vs. VCE

B 16 – 50 000131 © by SEMIKRON
MiniSKiiP 1200 V
ICop / IC
Mini1207
1.2
Tj = 150 °C
VGE = ≥ 15 V
1.0

0.8

0.6

0.4

0.2

0
0 25 50 75 100 125 150
Th [°C]
Fig. 7 Rated current of the IGBT ICop / IC = f (Th)
ICpuls/IC Mini1209 ICsc/ICN Mini1210
2,5
Tj = ≤ 150 °C 12
Tj = ≤ 150 °C
VGE = ± 15 V VGE = ± 15 V
10
tsc = ≤ 10 µs
2 Lext < 25 nH

8
1,5 Note:
*Allowed numbers of
short circuit:<1000
6
*Time between short
circuit:>1s
1
4

0,5
2

0 0
0 500 1000 1500 0 500 1000 1500
VCE [V] VCE [V]

Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT Fig. 10 Safe operating area at short circuit of the IGBT

Fig. 11 Typ. freewheeling diode forward characteristic Fig. 12 Forward characteristic of the input bridge diode

B 16 – 4 0698 © by SEMIKRON
MiniSKiiP 2
+rect +B +DC I+

SKiiP 20 NAB 06 ... Circuit g1 g3 g5

L1
SKiiP 21 NAB 06 ... Case M2 L2 B +T -T
U
V
SKiiP 20 NAB 12 ... Layout and connections for the L3 W

gB
SKiiP 22 NAB 12 ... customer’s printed circuit board g2 g4 g6
Hauptanschluß
Isu Isv Isw power connector
Note: The shunts are available 0u 0v 0w
Steueranschluß
control pin
only by option I -rect -B -DC -DC/A