Electronics & Instrumentation

Electronics 7A
Chapter Cunternts
.Diodes, p-n junction, Zener, diode, rectification.
Tanstors:Bipolar junctioh paramters,
transistor, hybrid
Logic gates, AND, OR, NOT, NAND, AND,
CB,
C and CE,sonfguatons, ampifers
NOR gates.
Bolean algebra,

Contents in Brief.

7A.1 p-n junction

A single semiconductor crystal that has been selectively doped so that one region is n-type
material and the adjacent region is p-type material is known as p-n junction. A junction pn
may be used as a diode called Depietion layer
junction diode.
When a p-n junction is formed,
the electrons diffuse across the
e e
junction from n-type to p-type.
Similarly holes diffuse from
p-type to n-type. As a result
the n-typecrysal acquires apositive potential and the p-type crystal acquires a negative potential
at the junction. The potential difference is called potential barrier. For Ge crystal its value is 0.3 v
and for Sicrystal V, =0.7 V.
A thin layer on both sides of the p- junction which is devoid of the majority carriers is called
depletion layer. Relative layer

7A.2 Forward biased p-n junction

The p-n junction is said to be forward biased when the
external p.d. applied across it is opposite to the potential
barrier. It opposes the potential barrier and thus depletion
layer is reduced and a forward current is obtained due to the
diffusion of majority carriers across thejunctionwhen V> V
Forward resistance=1 to 25 V.

7A.3 Reverse biased p-n junction

When the external p.d. across the junction is in the same direction as the
potential barrier, it is said as reverse biased. In this case the epletion
layer is thicker and a very small reverse curent may exist due to the
mìnority carier. Reverse resistance is 1 Meg ohm.

264
 Electronics 265
7A.4 Characteristics of p-n junction
A p-n junction characterisitcs curve is shown in Figure.
Forward bias : As the value of V increases from zero the layer thickness decreases which
reduces the resistance and the diffusion current increases. At the
point A on the curve the forward current abruptly increases. A)
This is called knee point and the corresponding voltage is called (min

knee voltage.
Knee point
Here, I,= 1aftusion -drift
Reverse bias :Width of the depletion layer increases due to the Reverse
lCut Knee
in Voltage
increase of reverse bias and very small current (drift current) biased
Voltage
occurs due to the minority carriers and
I
=Iatit-aifusion'
The increase of reverse bias beyond a certain limit produces
(-)
steep increase in the reverse current and it is called breakdown of the diode. This breakdown
is of two types-() Avalanche breakdown (for lightly doped p-n juntion) and (ü) Zener
breakdown (for highly doped p-n junction).

7A.5 Zener diode

Zener diode is a p-n junction diode specially designed to work only in the reverse breakdown
region.
Zener diode as a voltage regulator : Zener
diode is used as a voltage stabiliser. The R
Zener diode is connected to fluctuating Fluctuating Constant
voltage supply through a resistor R, which is n b Voltage
Voltage
called dropping resister. Supply P Supply
The constant voltage output is taken across a
load resistance R, connected in parallel with the diode.
Zener breakdown : Under a very high reverse voltage, the depletion region expands and the
potential barrier increases leading to a very high electric field (3x10 V/m) across the junction.
The electric field will break some of the covalent bonds of.the semiconductor. This is called
the Zener breakdown. The breakdown occurs at a particular and constant value of reverse
voltage called the breakdown voltage.

7A.6 Rectification
The process by which a device converts a.c. to d.c. is called the rectification and the device is
called the rectifier.
Half-wave rectifier :The rectifier that producesd.c. during halí cyde of ac. is called half-wave
rectifier.
NPUT
A.C.
VOLTAGE
a.c.
input TIME
2
OUTPUT
D.C
VOLTAGE

circuit of half-wave rectifier input and output of

half-wave rectifier
 266 SLST Physics
a.c. is
Full-wave rectifier : The rectifier that converts a.c. to d.c. during both half cycles of
known as full-wave rectifier.
D, A.C. INPUT V

VOLTAGE

a.c. -
TIME 2T
input
D.C
QUTPUT
VOLTAGE
circuit of full
wave rectifier input and output of
full-wave rectifier

7A.7 Junction transistors

a vacuum triode which consists of a single
A junction transistor is a solid state version of
between two
semiconductor crystal (Ge or Si) in which a thin p-type layer is sandwitched
n-type layers.
Types of transistors : There are two types of transistors-(a) 1-p-n and (b)
p-np

B C

(Symbol)
JEB JcB

E C

(Symbol)

(1-p-n/pnp transistors and their symbols)

as two end portions are
Important features:The middie portion is termed the base while the
heavily doped and the
referred to as the emitter (E) and the collector (C). The emitter is
is slightly larger than the
collector is omparatively thinly doped. The thickness of the collector
JEg iS emitter-base juncion and JcB
emitter. The base is very thin and it is very lightly doped.
a Jeg is forward-biased while
is the collector base junction. In normal operation of transistor
the Jog is reverse biased. In junction transistor both majority and minority
carriers are involved
and therefore, junction transistors are called bipolar device.
: upon the common terminal between the input
Mode of operations of a transistor Depending
output circuits of a transistor, it may be operated in any of the following modes :
and the
(a) Common-Base (CB) or grounded-base mode

(b)Common-Emitter (CE) or grounded emitter mode

(c) Common-Collector (CC) or grounded collector mode.
 Electronics |261
A.8
Transistor characteristics (CE mode) t
-0.1-0.2

In CE-Mode we have two characteristics : (a) Static (without input

signal) and (o) Dynamic (with input signal). CE VCE

In
1. Input Static characteristics : Input static characteristics are shown in Current

the figure. Where Ig = input base current, VBE is the input voltage
and Ver is the output voltage. These curves are similar to that of uA)
a forward-biased diode. For a constant Vap decreases with
Base

(in
increasing Ve because increase in Vrr Cause the effective base width
o
low that causes smaller recombination. 0.2 v (n vol) 4

2. Figure shows the static output characteristic curve of a p-tp transistor. Hlere I; is the
parameter.
Saturation

:
(a) Active region In this region emitter junction is Region

Active Region
forward-biased. Lines are not perfectly horizontal due to
early effect.
I=500 HA
(b) Cut-off region : This region ie., cut-off of the collector
current is impossible toobtain easily by making I; = 0, It is mA)
I=400 uA
necessary to reverse-bias the emitter junction slightly
I=300 pA
(in I, = 200 pA
(about 0.1 V for Ge) I=100 jA
Saturation region: In this region I, is independent of o
(c)
Cut off 2V 4V
4+
1
base curent. In saturation region VCE= 10 volt. This region VcE {in volt)
curves coincide and fallthereafter
region is very close to the zero voltage axis where all the
rapidly to zero.

Characteristics of transistors

Name of Input Output

configuration Characteristics Characteristics
Common base VER and I, at Va and I, at
constant V constant I
Common emitter
VER and I, at VcE and I, at
constant CE
V.
constant I

Common collector VCB and I, at VeE and I, at

constant VCE constant lc

c
lw
R
R
VEEOutput
:Output
+Va Intput lc
V nput i, VOutput V:input
L
CB configuration CE configuration CC configuration
 268 SLST Physics

7A.9 Hybrid parameter

Every linear circuit consisting input and output terminals can be analysed by four parameters
or h parameters.
(one measured in ohm, one in mho and two dimensionless) called hybrid

Itcan be proved by advanced circuit theory that voltages and currents in the figure can be
:
related by the following sets of equations
LINEAR V
CIRCUIT
(ü)
are called h parameters.
In these equations, the hs are fixed constants for a given circuit and
Once these parameters are known, we can use equations () and (ü) to find the voltages and
currents in the circuit. If we look at equation (i), it is clear that h,, has the dimension of ohm
hy, has the
and h, is dimensionless. Similarly, from equation (i), h, is dimensionless and
dimension of mho.

7A.10Amplifier
a
An amplifier is an electronic device which converts a low voltage a.c. input into high voltage
a.c. output without change in other characteristics.

Transistors can be used as amplifiers in three configurations :

(a) Common base amplifier, (b) Common emitter amplifier, (c) Common collector amplifier.

7A.11 Different parameters of common base amplifier has been

described below
1. d.c. current gain (B,): Pac

2. a.c. curent gain (B,J: Be

=
where Vce constant

change in output voltage_AV

3. Voltage gain (A): Voltage gan A, =change in input voltage AVi

where V, is collector emitter voltage and V; is the base emitter voltage.

4. Resistance gain Ag) : Resistance gain (Ag) =

output resistance R
input resistance R;

output power APo

5. Power gain (Ap) : Power gain (Ap)=
input power A
&m =
Al,
6. Transconductance (g): Transconductance, AVEB

7A.12Binary number
In digital electronics, digital gates are operated in binary logic (two-valued logic) which has
two states ON (1) and ÖFF (0) state. These two states are taken as the bits of a new number
system, called Binary number system. this number system has the base (or radix) 2.
 Electronics 269
1, 2, 3, 4,
Our conventional number system is decimal number system which has 10 digits (0,
5,6,7, 8, 9) and the base is 10. A decimal number say 57 is written as
57 =5 x 10' +7x 10° or, 625=6x 10 +2x 10 + 5x 100
as
Similarly, a binary number can be expressed into decimal form
Binary. Decimal
1010 1x 0x 22 +1 x 21 +0 x 20 =10
23 +

1x 22+1x 21 +1 x 20 4 +2+1 =7
=
111
e Convertion of decimal to binary :Suppose, decimal no. is 25 and it can be expressed into
:
binary as follows
2|25
2l12 Carry 1
Carry 0
26 Cary
23 Carry 1|0|
1
Now arrange the carriers from the last i.e., 11001 is the binary number.
(25)0 (11001),

JA.13 Binary fractions

Fractrional binary number are written as 1101.01 which has.the decimal value
(1 x
24+1x29+0x22+0x21 +1 x 20) + (0 x 2-1
+1 x2)=16 +8 +1+ =25.25
: Fractional portions are the negative indices of the base 2.

Convert (27.125),% -
Binary number

Integral part: 2]27

213 Carry 1
26 Carry 1
Carry 0
23 Carry 1
1
:. (27)0(11011),
• Fractional part : 0.125 x 2 =0.250 integral part 0
0.250 x 2 =0.50 integral part 0
0.50 x 2 =1.00integral part 1

:
(0.125),% = (0.01),

Combining we have (27.125)0(11011.001),

N.B. For fractional part there should be 5 or 0 at the end. Otherwise it cannot be completely
converted into binary form. For example, (25.127), cannot be completely converted into binary
form.

7A.14 Logic circuit/Logic gate

The electric circuits which operate in binary or two valued logic are called Logic gates. Two
or
valued logic has two states such as (1) Yes or No, (2) Low or High, (3) OFF ON etc. These
gates are the electronic version of different logical expression (called Boolean expression).
 270| SLST Physics

Al these gates have one or more than one input and a singie output. The ordinary logic gates
are () AND,
() OR, (i1) NT, (iv) NAND, (V) NOR which are the building blocks of all
digital electronic circuit.
Truth table:The possible input/output relationships of a gate are arranged ina tabular form
which is known as Truth table.
1. OR-Gate : Symbol is
In the figure A and B are two inputs and Y is the output. Y = A OR B=A + B (this addition
is called OR addition) and hence OR-Gate may be called an addition gate.

Truth tale : A BY
0 00 :
Symbol OR Ý=A ORB
01 B
0 11
1
11
2. AND Gate :
Output Y = A AND B =A x B (AND multiplication). This gate is also called a multiplication gate.

A B|Y
:
Truth tabe 0 00
1 0 :
Symbol
0 10
1 111
3. NOT-Gate : This gate is called an inverter as its output (Y) is the inverted form of the
input (A) ie, Y=A
A |Y=A
Truth table : Symbol : A Y=Ã

7A.15 De Morgan's theorem

Theorem-1 : The complement of the sun of two or more variables is equal to the product of
the complements of the variables i.e., A+B=A-B
sum of
Theorem-2: The complement of the product of two or more variables is equal to the
the complements of the variables i.e., A-B=A+B
• The NOR-Gate : According to De-Morgan's first
theorem we have a logic system in which a NOT Y=A+B
circuit follows an OR-Gate and it is called a NOR- B

Gate.
Symbol Truth table
A
BIY
A 0 01
NOR Y

B
0 10
1 00
1
10
 Electronics |211
The NAND-Gate : From De-Morgan's second theorem
we have a logic system in which a NOT Ccuit follows
an AND (figure). This circuit combination is called B

NAND-Gate.
Symbol Truth table
A B|Y
A+ 0 01
B
NAND'Y 0
11
01
1 10
NOR or a NAND gate is called the universal building block of all digital circuits because
A

OR, AND, NOT and all the digital Gates can be produced by a single or a number of NAND
gates.

p-Tyye - Åbuminum (Ai)

ltiple Choice Questions (MCQ) : Bren (B)

1.
Potential barriers across the junction is of 6. In a semiconductor diode, p side is earthed
the order of and n side is applied to a potential of 2 V.
1 uV b] 1 mV The diode will
lal b] conduct
Aa) not conduct
Ac] 1 v [d] 1 ky
Ic] conduct partially [d] breakdown
2. The impirity added in Germanium
7. Zener diodes with breakdown voltages
crystals to make n type semiconductor is
less than 5 V operate predominantly in
la] Aluminium b] Gallium
what type of breakdown?
Phosphorus, Av nie (t9)
[c Iridium Ad) Ardimeng(S) a] avalanche
of
b] zener
are
3.
In, and n, respectively thean number
c varactor (aj Schottky
holes and electrons in intrinsic
8. From the given figure find out if VIN
semiconductor then
increases I, will
increase

4. n-type semiconductor is formed oj decrease VN load

la] when a Ge crystal is doped with an [c] remain the same
impurity containing 3 valence electrons none of these
d
b] when a Ge crystal is doped with an 9. The normal operating region for a Zener
impurity contairing 5 valence electrons diode is the
[c] from pre Ge crystal [a] forward bias region
[dj from pure Si crystal b] reverse bias region
5. The width of a depletion layer in a p-n [c zero-crossing region
junction is reverse breakdown region
la] increased by reverse biasing 10. A 6.2vZener diode is rated as 1 watt. The
b] is independent of voltage maximum safe current it can carry is
161+4
Ic] increased by forward biasing [a] 1.61 A b]
[dj decreased by reverse biasing [c] 16.1 mA [d] 1.61 mA
 212 SLST Physics
a 52.of 17. The Zener diode in the regulator circuit
11. A 8.2V Zener diode has resistance
across its terminals shown in the figure has a Zener voltage of
The actual voltage 5.8 volts and a Zener knee of current of 0.5
when the curent is 25 mA is mA. The maximum load curent drawn from
[al 8.2 V [b] 125 V this circuit ensuringproperfunctioning
over
Ac] 8.325V [d] 8.075 V the input voltage range between 20 and 30
12. From the given figure find out if VN volts is
V,=5.8 V
decreases, I, will R lal 25.6 mA
laj increase Ab) 24.2 mA 20V-30V| load
Ab) decrease [cj 15.7 m
Jc] remain the 2Sload [d] 14.2 mA
same 18. Which of the following is used for
d] none of these rectifying AC?
13. The energy gap between conduction
band [a) choke b] transformer
and the valence band is of the order of [d] condenser.
0.7 eV. Then it is
Jel diode
[b] a conductor 19. A diode as a rectifier converts
[al an insulator
a.c. into d.c.
c] a semiconductor (d)
an alloy /a
[b) d.c. into a.c.
14. Zener diode exhibit constant direct
an abrupt reverse breakdown [c varying d.c current into
Ja CuIrent
b] a gradual forward breakdown [d]high voltage into low voltage and vice
c none
no breakdown at all versa
wave
d of these 20. A 50 Hz A.C. is rectified with full
15. The following data refers to an experiment rectifier. What is the ripple frequency?
carried out on a Zener iode la] 25 b] 50

[d 100 [d] 200

Reverse Reverse
a
Voltage Current 21. The peak voltage of input AC to full
wave rectifier is En. What is the peak
1V 1 pA
inverse voltage?
2V 2 LA

3V 10 LA
2
b Eo

4V 20 LA
Ac] 2E [d] 4E
The Zener voltage will be between a
22. The peak current of input AC to half
[al 1 V and 2 V l 2 V and 3 V wave rectifier is Io. What is the mean
[c] 3 V and 4 V d] none of these output curent?

16. A diode is a non-linear device due to the [b]

2
fact that
2lo
a it has a symmetrical anode and cathode
terminals
[b] its anode and cathode are of different
23. What is the ripple factor for half-wave
materials rectifier?
[a] 1.11% b] 1.57%
c none
its I-V characteristic is non-linear
[c] 40.6% Jd none of these
[d] of these
 Electronics |273
24. In a full-wave rectifier circuit operating at 32. In which of the transistor amplifiers, the
50 Hz mains frequency, the fundamental voltage gain is the highest?
frequency in the ripple would be la common base
[a] 25 Hz [b] 50 Hz fbj common emitter
Tc 70.7 Hz Ad] 100 Hz c common collector
25. The ripple factor in a rectifier circuit [ajsame for all types of the amplifiers
indicates 33. Which of the following is not a parameter
la] amount of a.c. voltage present in output defined for transistor amplifier?
[a] current gain [b] resistance gain
[b]amount of d.c. voltage present in output
Ic] power gain d] energy gain
ic] change in d.c. voltage when input a.c.
34. Hybrid means
changes
[d] change in d.c. voltage when the load Aa] mixed b] single
íc] unique [a] none of these
changes
26. The cathode of a Zener diode in a voltage
35. There are h parameters of a transistor.
regulator is normally a two
Ic three
b] four
[d] none of the these
aj more positive than the anode
[b] more negative than the anode
36. The h parameter approach gives correct
results for
[c at +0.7 V [a] large signals only
[a] grounded Abj small signals only
27. Efficiency of a half-wave rectifier is nearly [c] both small and large signals
la] 80%. [b] 60% d none
of these
40% [d] 20% 37. A transistor behaves like a linear device
28. The output wave form of full-wave for
rectifier is Ja] small signals only
b] large signals only
[c] both small and large signals
d] none of these
38. The parameter h stands for input
impedance in

MAA a] CB arrangement with output shorted

b] CC arrangement with output shorted
Ic] CE arrangement with output shorted
(d] none of these
29. How is the emitter base junction in the
39. The unit of h parameter is
transistor biased?
[a] mho [b] ohm
Ja] forward biased
a none of these
b] reverse biased [c] farad

c may be reverse or forward biased 40. The parameter h is called in CE

[a]biasing in this case is meaningless arrangment with output shorted.
30. How is the base of the transistor biased?
[a] forward biased
la] voltage gain b] current gain
I] input impedance [d] none of these
b] reverse biased 41. If the operating point changes, the k
[c] may be reverse or forward biased
parameters of a transistor
Ad] biasing in this case is meaningles
31.
In a transistor in CE configuration, the Ja] also change
ratio of power to voltage gain is [b]do not change
[a] a [c] may or may not change
b] B/a
d none of these

ST Physics-18
 274 SLST Physics

42. The values of h parameters of a transistor

a potential difference is applied across
the junctions making p-section negative
in CE arangement are
and n-section positive
fal the same as for CB arrarngement
[c] a potential difference is applied across
b the same as for CC arrangement the junctions
lc different from that in CB arrangement (d] it is impossible
(d none of these 50. In p--p transistor, the n-type crystal acts
43. In order to determine h, and h
as
parameters of a transistor, what is a.c.
[aj emitter ordy
short circuited?
b] base only
[aj input
Ic] collector only
b] output [d] either emitter or collector
[c input as well as output
51. Thecurent gain of a common base transistor
d none of these amplifier is
a
44. If temperature changes, h parameters of a zero bjless than 1
transistor
a may or may not change [c] 1 d more than 1
52. The current gain of à common emitter
b} do not change
transistor amplifier is
ic] also change
(d] none of these
ía zero b] less than 1
45. In CE arrangement, the value of input
[d 1 Jd] more than 1
53. Which of the following has the least value
impedance is approximately equal to
for the common base transistor amplifier?
none of these [a power gain b] current gain
d
46. Using standard transistor h parameter
Id voltage gain d none of these
nomencdature, the voltage gain in CE 54. In -p-n transistor, the p-type crystal acts
arrangement is as
[a emitter only
b) base only
[ collector only
[d] either emitter or collector
d none of these 55. When two semiconductors of p-type and
n-type are brought into contact, they form
a p-n junction which acts like a
X here X=
47. Z= h
1 [a] conductor b] oscillator
hoe t Id amplifier d] rectifier
56. The emitter of transistor is doped
laj hoe
none of these heavily because it
d lal dissipates maximum power
48. How many h parameters of a transistor are
dimensionless? b] is supplier of charge carriers
Ic] receivesthe input
fa four b] three
d two d none
of these [al should have low resistance
49. Under what condition there is no appreciable 57. A transistor has an g=0.95. Then the
current in ap-n junction? value of B will be
[a] p-section is made positive and t-section la] 0.95 b]1.5
19 (a] (19-1
negative e]
 Electronics. 275
58. For a CE configuration, the base current is 66. The curent gain of a ransistor is 100. 1F
-60 uA and the collector current is 6 mA. the base current changes by 200 LA, what
What is the current gain? is the change in collector curent?
[a 30 bj 60 [a] 200 mA b] 20 mA
Ac] 100 (d] 120 [c] 2 mA (d] 0.2 mA
59. In an 1p-n transistor, the base current is 67. What is the voltage gain of a transistor
100 LA and the collector current is 10 mA. with load resistance 100 2 and internal
What is emitter current? resistance 200 S2? Given that B=90
la
1.01 mA b) 10.1 mA
[aj 400 [b] 450
[c] 0.101 mA [d] 0.0101 mA [c] 800 (d] 900
60. The knee voltage of a p-n junction diode is
0.8 V and the width of thédepletion layer
68. The base current of a transistor is 100 uA
is 2 um. What is the electric field in the
and the' collector current is 2 mA. What is
the current gain for the common base
epletion layer? configuration?
{aj 4 MV/m Ab] 0.4 MV/m [a] 0.90 b] 0.93
{c] 4
kV/m [a] 0.4 kV/m
d 0.95 [d] 0.98
61. In an 1-p-n transistor the current gain for
CE configuration is 80. If the emitter 69. The current amplification of a common
current be 8.1 mA, then what is the base base p--p ransistor is 0.96. What is the
curent? Current gain if it is used as common
emitter amplifier?
fa] 0.1 A [b] 0.01 pA
dcl 0.1 mA [d] 0.01 mA la] 16 b] 24
[c] 28 [a] 32
62. The crrent gain of a transistor in common
emitter configuration is 80. If the emitter 70. The current gain for a transistor used in
current be 8.1 mA, then what is the CE configuration is 98. If the load
collectoI curent?
la 8.1 mnA Ab] 8.0 mA resistance is 600
gain?
,
resistance be 1 MQ and the internal
what is the voltage
c 0.1 mA [d] 1.0 mA
[a] 90 b]95
63. The current gain of an amplifier in the CE
configuration is 80. What is its current
[C] 100 dj none of these
gain in common base configuration? 71. The safety limit of temperatures for
[a] 0.999 b] 0.909 germanium and silicon are
0.908 Ad] 0.988 a] 80°C, 200°C [b] 200°C, 80°C

64. A common emitter amplifier has current [c] 800°C, 200°C d] 80°C, 2000°C
gain 70. Its load resistance is 5 ksl and 72. For a transistor Ip=25 mA and Ig=1 mA,
input resistance is 500 2. What is the what is the value of a?
voltage gain? .

[a] 500 700 25 26

bj
[c 1000 dj 1400
65. For a fransistor, the current amplification 24 25
[a) 24
factor is 4. The ransistor is connected in
CE configuration. The change in the 73. A CE amplifier has current gain 70. Its
collector current when the base curent load resistance is 5 kl and input resistance
changes by 6 mA is is 500 S2. What is the voltage gain?
[aj 6 mA bj 4.8 mA lal 500 Ab 700
Ll 24 mA [d] 8 mA [c] 1000 [dj 1400
 276 SLST Physics

74. Digital circuit can be made by repititive 81. To get an output Y=1 from the circuit
use of below, the input must be
la OR gates b AND gates A' B' C
[c] NOT gates [d] NAND gates lal 0 1 0
75. In the binary number system the number 1
b] 0 0
100 represents
a one [b] three 1

.c] four [d] hundred [d] 1 0 0

76. NAND and NOR gates are called wniversal 82. The logic circuit shown below represents
gates because they which gate?
a] are universally available la] NOT
[b] can be combined to produce OR, AND
and NOT gates Ab] OR
[c are widely used in the integrated [c] AND
circuits
[d] NOR
[d] can be easily manufactured
77. Which of the following is the truth table
83. Apure semiconductor has equal electron and
for NOT gate?
hole concentration of 10 m.
Doping by
indium increases n, to 5x10 m. Then, the
[A Y |A Y value of n, in the doped semiconductor is
1
lal
0 0
[b] [a 2x106 m³ b] 10 m3
c] 2x10 m3 (d] 101 m
A Y] A Y
84. The truth table for the following logic
1 0 0 1
circuit is

78. Which of the following can act as the

building block for the other gates?
a] NAND and NOR
b] XOR and OR
c] XOR and NAND Be
[d] NOT or OR
A B Y A B
79. Which of the following gives output 1 for 0 0 0 0
XOR gate?
0 1 1 0, 1 1
[a) A =0, B= B [b] A
=1, B=1 lal 1
{b]

1 1 1
cl A
=1, B=0 [d} A
=0, B=1
80. In the figure given below, potential
difference between P and Q is A B Y A B Y
[a] 0 1
1 0 1 1
[b]5 volt 102
1 0 1 1
10
yid10 volt 310 2 1 1 0 1
{d] 15 volt
 Electronics |217

85. The following figure shows a logic gate A B [d] A B Y

circuit with two inputs A and B and the 0
output Y. The voltage waveforms of A, B 1 1 1
and Y are as given. 1 1 1
A 1
Logic gate 1 1
B
circuit
88. In the following circuit, the current
1
flowing through 1 ks2 resistor is
A
la] O mA
500 2

B1 Ab] 5 mA
10 V 1
k2
c] 10 mA
5 V
[d] 15 mA
o
Y of
89. In CommOn base configuration
transistor, characteristic curve is

The logic gate is 10V 10y 20y

ja] NOR gate [b] OR gate
la! I4 20V -b] I4
[c AND gate Ad] NAND gate
86. The arangement shown in the figure
performs the logic function of I 10V 10V
-20V
[a] AND gate 20V

b] OR gate
90. The following figure shows a logic gate
[c NAND gate circuit with two inputs A and B and the
output C. The A
[d] NOT gate logic Gate
voltage wave circuit
87. In the following circuit the output Y for all forms of A, B B
possible inputs A and B is expressed by and are as shown below:
C

the truth table

A
B1!
C1l
A B Y b] A B. Y
a] The logic circuit gate is
1 0 1

1
1 1
1
1
0 0
a OR gate b] AND gate

[c NAND gate [d] NOR gate

1 1 1 1
 278| SLST Physics

Answers

5. a a
1. c 2. d 3. a 4.
b. 6. a 7. b 8. 9. d 10. b
a c 18. c 19. a 20. c
11. c 12. b 13. c 14. 15. b 16. 17. b

a c c a
21. c 22. d 23. d 24. d 25. a 26. 27. 28. 29. 30. d

31. c 32. b 33. d 34. a 35. b 36. b 37. a 38. c 39. b 40. b
a c c
41. a 42. C 43. b 44. c 45. a 46. 47. b 48. 49. 50. b

c 57. c 58. c 59. b 60. b

51. d 52. 53. d 54. b 55. d 56. b

61. c 62. b 63. d 64. b 65. c 66. b 67. b 68. c 69. b 70. d

71. a 72. a 73. b 74. &

75. c 76. b 77. c 78. a 79. c 80. c

81. c 82. b 83. c 84. a 85. d 86. a 87. c 88. b 89. b 90, b

Hints /Solutions
17. Here V,=5.8 V
Since, V, remains constant
and maximum load current when volts is maximum, ie. =30 V
.30= 1000 x Imag +5.8 or, Imax= 24.2 mA
20. In a full wave rectifer ripple frequency is twice that of the frequency of applied emí.
28. Full wave rectifier rectifies both halves of a.c. input signal.
57. In case of the given transistor, c=0.95

0.95 0.95

6.mA 6x10-3
58. Current gain,
ß=uAs0v1n-6
59. :.. I;=I;+Ie= 100 =uA + 10 mA = 10.1 mA
emitter curent 10.1 mA
80
61. a= 80 or, a=
B=a or, 80= 0r, 81 1
current gain,
a=81
:. mA
.. lc=8 Iy =
Base current,
I -Iç= (8.1-8)mA = 0.1 mA
63. We know that,
ß=8
80
Here, B=80, ::L
1 81 :.
Or, or, a==0.988
72. We know that, a= I;=+Iç or, I; = (1 +
25)mA=26 mÁ
 Electronics 279
80. We know, in forward bias, junction offers a low resistance to the flow of current.
Now let us assume the resistance of the diode is zero.
:. the net resistarnce across P and O=52 :. Total resistance =5+ 10= 15 S2
30
:. current
I==2A
= V
So potertial difference between P and Q is 2x5=10
81. From the figure we can write, A B
C

1 1

(104m
83. n, = ní -= 2x10 m3
5x103
84. Truth table for the logic gate

A B
A B A-B A-B A-B+A-B
1
0 1 1

1 1 1
1 1 0 0

B
85. A
(0

0 1

86. O-A-B Y=A-B=A-B

87. A Y'=A+ B Y=A+B=A+B

0 1

0 1
1
1 1

88. Here voltage across 1 kQ resistor (R) =5 V 1035mA

90. The truth table of the wave form, A

1 0

0 0

It is the truth table of AND gate.