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    2 SC 2690

    Uploaded by

    Agung Kurniandra

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    2 SC 2690

    Uploaded by

    Agung Kurniandra
    7 views2 pages

    Original Title

    2sc2690

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    © © All Rights Reserved

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    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    7 views2 pages

    2 SC 2690

    Uploaded by

    Agung Kurniandra

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    of 2

    INCHANGE Semiconductor

    isc Silicon NPN Power Transistor 2SC2690

    DESCRIPTION
    ·High voltage and high fT
    ·Complementary to 2SA1220 PNP transistor
    ·100% avalanche tested
    ·Minimum Lot-to-Lot variations for robust device
    performance and reliable operation

    APPLICATIONS
    ·The 2SC2690 is general purpose transistors designed
    For use in audio and radio frequency power amplifiers.
    ·Suitable for use in driver stage of 50 to 100W audio
    Amplifiers and output stage of TV vertical deflection
    circuit

    ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

    SYMBOL PARAMETER VALUE UNIT

    VCBO Collector-Base Voltage 120 V

    VCER Collector-Emitter Voltage RBE=150Ω 120 V

    VCEO Collector-Emitter Voltage 120 V

    VEBO Emitter-Base Voltage 5 V

    IC Collector Current-Continuous 1.2 A

    Collector Power Dissipation


    PC 20 W
    @ Tc=25℃

    TJ Junction Temperature -55~150 ℃

    Tstg Storage Temperature Range -55~150 ℃

    isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark


    INCHANGE Semiconductor

    isc Silicon NPN Power Transistor 2SC2690

    ELECTRICAL CHARACTERISTICS
    TC=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    VCE(sat) Collector-Emitter Saturation Voltage IC=1A; IB= 200mA 0.7 V

    VBE(sat) Base-Emitter Saturation Voltage IC=1A; IB= 200mA 1.3 V

    ICBO Collector Cutoff Current VCB= 120V ; IE= 0 1 μA

    IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1 μA

    hFE-1 DC Current Gain IC= 5mA ; VCE= 5V 35

    hFE-2 DC Current Gain IC= 0.3A ; VCE= 5V 60 320

     hFE-2 Classifications

    R Q P

    60-120 100-200 160-320

    NOTICE：
    ISC reserves the rights to make changes of the content herein the datasheet at any time
    without notification. The information contained herein is presented only as a guide for the
    applications of our products.
    ISC products are intended for usage in general electronic equipment. The products are not
    designed for use in equipment which require specialized quality and/or reliability, or in
    equipment which could have applications in hazardous environments, aerospace industry, or
    medical field. Please contact us if you intend our products to be used in these special
    applications.
    ISC makes no warranty or guarantee regarding the suitability of its products for any
    particular purpose, nor does ISC assume any liability arising from the application or use of
    any products, and specifically disclaims any and all liability, including without limitation
    special, consequential or incidental damages.

    isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark

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