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2SC5198

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30 views4 pages

2SC5198

Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
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SavantIC Semiconductor

www.datasheet4u.com
Product Specification

Silicon NPN Power Transistors 2SC5198

DESCRIPTION
·With TO-3P(I) package
·Complement to type 2SA1941

APPLICATIONS
·Power amplifier applications
·Recommend for 70W high fidelity audio
frequency amplifier output stage

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3P(I)) and symbol
3 Emitter

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 140 V

VCEO Collector-emitter voltage Open base 140 V

VEBO Emitter-base voltage Open collector 5 V

IC Collector current 10 A

IB Base current 1 A

PC Collector power dissipation TC=25 100 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor
www.datasheet4u.com
Product Specification

Silicon NPN Power Transistors 2SC5198

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO Collector-emitter breakdown voltage IC=50mA; IB=0 140 V

VCEsat Collector-emitter saturation voltage IC=7 A;IB=0.7A 2.0 V

VBE Base-emitter voltage IC=5A ; VCE=5V 1.5 V

ICBO Collector cut-off current VCB=140V ;IE=0 5 µA

IEBO Emitter cut-off current VEB=5V; IC=0 5 µA

hFE-1 DC current gain IC=1A ; VCE=5V 55 160

hFE-2 DC current gain IC=5A ; VCE=5V 35

fT Transition frequency IC=1A ; VCE=5V 30 MHz

COB Output capacitance IE=0; VCB=10V;f=1MHz 170 pF

hFE-1 classifications

R O

55-110 80-160

2
SavantIC Semiconductor
www.datasheet4u.com
Product Specification

Silicon NPN Power Transistors 2SC5198

PACKAGE OUTLINE

Fig.2 Outline dimensions

3
SavantIC Semiconductor
www.datasheet4u.com
Product Specification

Silicon NPN Power Transistors 2SC5198

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