AF4825P

P-Channel 30-V (D-S) MOSFET

„ Features „ General Description

-Low rDS(on) Provides Higher Efficiency and Extends These miniature surface mount MOSFETs utilize
Battery Life High Cell Density process. Low rDS(on) assures
-Miniature SO-8 Surface Mount Package Saves minimal power loss and conserves energy, making
Board Space this device ideal for use in power management
-High power and current handling capability circuitry. Typical applications are PWM DC-DC
-Extended VGS range (±25) for battery pack converters, power management in portable and
applications battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.

„ Product Summary
VDS (V) rDS(on) (mΩ) ID (A)
13@VGS=-10V -11.5
-30
19@VGS=-4.5V -9.3

„ Pin Assignments „ Pin Descriptions

Pin Name Description

S 1 8 D
S Source
S 2 7 D G Gate
S 3 6 D D Drain

G 4 5 D

SOP-8

„ Ordering information

A X 4825P X X X

Feature PN Package Lead Free Packing

F :MOSFET S: SOP-8 Blank : Normal Blank : Tube or Bulk
L : Lead Free Package A : Tape & Reel

This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.1 Oct 15, 2004
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 AF4825P
P-Channel 30-V (D-S) MOSFET

„ Absolute Maximum Ratings (TA=25ºC unless otherwise noted)

Symbol Parameter Rating Units
VDS Drain-Source Voltage -30 V
VGS Gate-Source Voltage ±25 V
TA=25ºC -11.5
ID Continuous Drain Current (Note 1) A
TA=70ºC -9.3
IDM Pulsed Drain Current (Note 2) ±50 A
IS Continuous Source Current (Diode Conduction) (Note 1) -2.1 A
TA=25ºC 3.1
PD Power Dissipation (Note 1) W
TA=70ºC 2.3
TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 ºC

„ Thermal Resistance Ratings

Symbol Parameter Maximum Units
RθJC Maximum Junction-to-Case (Note 1) t < 5 sec 25 ºC/W
RθJA Maximum Junction-to-Ambient (Note 1) t < 5 sec 50 ºC/W
Note 1: surface Mounted on 1”x 1” FR4 Board.
Note 2: Pulse width limited by maximum junction temperature

„ Specifications (TA=25ºC unless otherwise noted)

Limits
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
Static
V(BR)DSS Drain-Source breakdown Voltage VGS=0V, ID=-250uA -30 - - V
VGS(th) Gate-Threshold Voltage VDS= VGS, ID=-250uA -1 -1.6 -3 V
IGSS Gate-Body Leakage VDS=0V, VGS=±25V - - ±100 nA
VDS=-24V, VGS=0V - - -1
IDSS Zero Gate Voltage Drain Current VDS=-24V, VGS=0V, uA
- - -5
TJ=55ºC
ID(on) On-State Drain Current (Note 3) VDS=-5V, VGS=-10V -50 - - A
VGS=-10V, ID=-11.5A - 10 13
VGS=-4.5V, ID=-9.3A - 15 19.0
rDS(on) Drain-Source On-Resistance (Note 3) mΩ
VGS=-10V, ID=-13A,
- 11 13
TJ=55ºC
gfs Forward Transconductance (Note 3) VGS=-15V, ID=-11.5A - 29 - S
VSD Diode Forward Voltage IS=2.5A, VGS=0V - -0.8 -1.2 V
Dynamic (Note 4)
Qg Total Gate Charge - 64 100
VDS=-15V, VGS=-10V,
Qgs Gate-Source Charge - 11 - nC
ID=-11.5A
Qgd Gate-Drain Charge - 17 -
Switching
td(on) Turn-On Delay Time - 15 25
tr Rise Time VDD=-15, RL=6Ω, - 13 20
nS
td(off) Turn-Off Delay Time ID=-1A, VGEN=-10V - 100 152
tf Fall-Time - 54 81
Note 3: Pulse test: PW < 300us duty cycle < 2%.
Note 4: Guaranteed by design, not subject to production testing.

Anachip Corp.
www.anachip.com.tw Rev. 1.1 Oct 15, 2004
2/5
 AF4825P
P-Channel 30-V (D-S) MOSFET

„ Typical Performance Characteristics

ID =11.5A

Anachip Corp.
www.anachip.com.tw Rev. 1.1 Oct 15, 2004
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 AF4825P
P-Channel 30-V (D-S) MOSFET

„ Typical Performance Characteristics (Continued)

Anachip Corp.
www.anachip.com.tw Rev. 1.1 Oct 15, 2004
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 AF4825P
P-Channel 30-V (D-S) MOSFET

„ Marking Information
SOP-8L
( Top View )
8
Lot code:
Logo "X": Non-Lead Free; "X": Lead Free
"A~Z": 01~26;
Part Number 4825P "A~Z": 27~52
AA Y W X
Week code:
"A~Z": 01~26;
"A~Z": 27~52
1
Year code:
"4" =2004

~
Factory code

„ Package Information
Package Type: SOP-8L
H
E

VIEW "A"

D
0.015x45
7 (4X) 7 (4X)
A2

e B
A1

VIEW "A"
y
Dimensions In Millimeters Dimensions In Inches
Symbol
Min. Nom. Max. Min. Nom. Max.
A 1.40 1.60 1.75 0.055 0.063 0.069
A1 0.10 - 0.25 0.040 - 0.100
A2 1.30 1.45 1.50 0.051 0.057 0.059
B 0.33 0.41 0.51 0.013 0.016 0.020
C 0.19 0.20 0.25 0.0075 0.008 0.010
D 4.80 5.05 5.30 0.189 0.199 0.209
E 3.70 3.90 4.10 0.146 0.154 0.161
e - 1.27 - - 0.050 -
H 5.79 5.99 6.20 0.228 0.236 0.244
L 0.38 0.71 1.27 0.015 0.028 0.050
y - - 0.10 - - 0.004
O O O O
θ 0 - 8 0 - 8

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www.anachip.com.tw Rev. 1.1 Oct 15, 2004
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