DAY THIRTY FOUR

Electronic
Devices
Learning & Revision for the Day
u Energy Bands in Solids u I-V Characteristics Semiconductor Diode in u Special Purpose Diodes
u Semiconductors Forward and Reverse Bias u Transistor
u Semiconductor Diode u Diode as a Rectifier

Energy Bands in Solids

According to band theory of solids, in a crystalline solid due to mutual interaction
among valence electrons of neighbouring atoms, instead of sharp energy levels, energy
bands are formed. Energy bands are of the following three types
(i) Valence band It is the energy band formed by a series of energy levels of valence
electrons actually present. Ordinarily, valence band is completely filled and
electrons in this band are unable to gain energy from external electric field. The
highest energy level in a valence band at 0 K is called fermi energy level.
(ii) Conduction band The energy band having just higher energy than the valence band
is called conduction band. Electrons in conduction band are commonly called the
free electrons.
(iii) Forbidden band The energy gap between the valence band and the conduction band
of a solid is called the forbidden energy gap E g or forbidden band. Width of
forbidden energy gap depends upon the nature of substance.
PREP
MIRROR
Semiconductors Your Personal Preparation Indicator
●
In semiconducting solids, the valence band is completely filled but conduction band u No. of Questions in Exercises (x)—
is completely empty and the energy gap between them is small enough (E g < 3 eV). At u No. of Questions Attempted (y)—
absolute zero temperature, it behaves as an insulator. u No. of Correct Questions (z)—
●
A pure semiconductor, in which no impurity of any sort has been mixed, is called (Without referring Explanations)
intrinsic semiconductor. Germanium (E g = 0.72 eV) and silicon (E g = 1.1 eV) are
examples of intrinsic semiconductors.
u Accuracy Level (z / y × 100)—
u Prep Level (z / x × 100)—
●
Electrical conductivity of pure semiconductor is very small. To increase the
conductivity of a pure semiconducting material, it is doped with a controlled quantity In order to expect good rank in JEE,
(1 in 10 5 or 10 6) of suitable impurity. Such a doped semiconductor is called an your Accuracy Level should be above
85 & Prep Level should be above 75.
extrinsic semiconductor.
368 40 DAYS ~ JEE MAIN PHYSICS DAY THIRTY FOUR

●
The number of electrons reaching from valence band to This layer containing immobile ions is called depletion layer.
conduction band, The thickness of depletion layer is approximately of the order
− E / 2 kT
n = AT 3 / 2e g of 10 −6 m.
where, k = Boltzmann’s constant, T = absolute The potential difference developed across the p-n junction
temperature and A = atomic weight. due to diffusion of electrons and holes is called the potential
barrier Vb (or emf of fictitious battery). For germanium diode
Superconductors barrier potential is 0.3 V, but for Si diode, its value is 0.7 V.
The barrier electric field developed due to it, is of the order of
When few metals are cooled, then below a certain critical
10 5 Vm–1.
temperature, their electrical resistance suddenly becomes
zero. In this state, these substances are called
superconductors and this phenomena is called Mobility of Charge Carriers
superconductivity. Mercury become superconductor at 4.2 K, The mobility of a charge carrier is defined as the velocity
lead at 7.25 K and niobium at 9.2 K. gained by its per unit electric field, i.e. µ = Vd / E .
●
Current in semiconductor is, i = ie + i h = eA(ne Ve + nhVh )
Types of Extrinsic Semiconductor Conductivity, σ = =
J i
= e(ne µe + nhµ h )
According to type of doping impurities, extrinsic E AE
semiconductor are of two types (where, J = current density = nqV )

1. n-type Semiconductor
To prepare an n-type semiconductor, a pentavalent I-V Characteristics of Semiconductor
impurity, e.g. P, As, Sb is used as a dopant with Si or Ge.
Such an impurity is called donor impurity, because each
Diode in Forward and Reverse Bias
dopant atom provides one free electron. When we join an external potential source, such that p-side of
In n-type semiconductor ne > > nh , i.e. electrons are p-n junction is joined to positve terminal of voltage source and
majority charge carriers and the holes are minority charge n-side to negative terminal of voltage source, the junction is
carriers, such that ne ⋅ nh = n2i . An n-type semiconductor is said to be forward biased and applied electric field E opposes
electrically neutral and is not negatively charged. the barrier electric field Eb .
Conductivity, σ ≈ ne µe e As a result, width of depletion layer is reduced and on
applying a voltage V > Vb , a forward current begins to flow.
2. p-type Semiconductor Resistance offered by p-n junction in forward bias is small
(about 10-50 Ω).
To prepare a p-type semiconductor, a trivalent impurity, IF
E
e.g. B, Al, In, Ga, etc., is used as a dopant with Si or Ge. E Eb (mA)
Eb
Such an impurity is called acceptor impurity as each sr
r s r ss rr s
impurity atom wants to accept an electron from the crystal r s s ss rr r VR VF
s sr r r s
lattice. Thus, effectively each dopant atom provides a hole. p r ss rr s n
p r sr s n
In p-type semiconductor nh > > ne , i.e. holes are majority + – – +
charge carriers and electrons minority charge carriers, such IR (µA)
that nh ⋅ ne = n2i . A p-type semiconductor is electrically (a) FB (b) RB (c)
neutral and is not positively charged. If connections of potential source are reversed [Fig. (b)], i.e.
The number of free electrons in a semiconductor varies p -side is connected to negative terminal of battery and n-side
with temperature as T 3 / 2 . to positive terminal, the junction is said to be reverse biased
and in this case E and Eb , being in same direction, are added
Conductivity, σ ≈ nhµ he
up. So, the depletion layer broadens and potential barrier is
fortified. Consequently, an extremely small leakage current
Semiconductor Diode flows across the junction due to minority charge carriers and
junction resistance is extremely high (~ − 10 5 Ω). For a
A p-n junction is obtained by joining a small p-type crystal
sufficiently high reverse bias voltage (25 V or even more), the
with a small n-type crystal without employing any other
binding material in between them. Whenever a p-n junction is reverse current suddenly increases. This voltage is called
formed, electrons from n-region diffuse through the junction Zener voltage or breakdown voltage or avalanche voltage.
into p-region and the holes from p-region diffuse into
NOTE • A p-n junction behaves as a voltage controlled switch. In
n-region.
forward bias, it acts like ON switch and in reverse bias as
As a result of which neutrality of both n and p-regions is OFF switch.
disturbed, and a thin layer of immobile negative charged ions
appear near the junction in the p-crystal and a layer of • The p-n junction can be presumed as a capacitor, in which
positive ions appear near the junction in n-crystal. the depletion layer acts as dielectric.
DAY THIRTY FOUR ELECTRONIC DEVICES 369

Diode as a Rectifier Light Emitting Diode (LED)

Junction diode allows current to pass only when it is forward It is a specially designed diode made of GaAsP, GaP, etc.
biased. So, if an alternating voltage is applied across a diode, When used in forward biased, it emits characteristic, almost
the current flows only in that part of the cycle, when the diode monochromatic light. In reverse biased, it works like a normal
is forward biased. diode.
This property is used to rectify alternating voltages and the ●
I-V Characteristics LEDs are current dependent devices
circuit used for this purpose is called a rectifier, and the with its forward voltage drop (VF ) depending on the
process is known as rectification. forward biased LED current. Characteristics of light
There are two types of rectifier diode as given below emitting diode I-V are shown below
1. Half Wave Rectifier A rectifier, which rectifies only

Infrared

Amber
Yellow

Green
one-half of each AC input supply cycle, is called a half

Blue
I (mA)

Red
wave rectifier.
A half wave rectifier gives discontinuous and pulsating
DC output. As no output is obtained corresponding to

Forward current
alternate half cycles of the AC input supply, its efficiency
is quite low.
2. Full Wave Rectifier A rectifier, which rectifies both
halves of each AC input cycle is called a full wave
rectifier. VF
Forward voltage
The output of a full wave rectifier is continuous, but
pulsating in nature. However, it can be made smooth by
using a filter circuit. Photodiode
As output is obtained corresponding to both the half It is a special diode used in reverse bias which conducts only
cycles of the AC input supply, its efficiency is more than when light of suitable wavelengths is incident on the junction
that of half wave rectifier. of diode. The energy of incident light photon must be greater
than the band gap of semiconductor (i.e. hν > E g ). Materials
NOTE • The ripple factor is defined as the ratio of rms value of AC used are Cds, Se, Zns, etc.
component in the output of the rectifier to the DC
component in the input.
Solar Cell
It is a special p-n junction, in which one of the
Special Purpose Diodes semiconductors is made extremely thin, so that solar radiation
There are few diodes which are designed to serve some special falling on it reaches junction of diode without any absorption.
purpose and application. A solar cell directly converts, solar energy into electrical
energy. Popularly used solar cells, Ni-cd, PbS cell, etc.
Zener Diode
It is a highly doped p-n junction diode which is not
damaged by high reverse current. It is always used in n Transistor
reverse bias in breakdown voltage region and is p A transistor is a combination of two p-n junctions joined in
chiefly used as a voltage regulator. series. A junction transistor is known as Bipolar Junction
●
Zener Diode as Voltage Regulator The following circuit is Transistor (BJT). It is a three terminal device.
used for stabilising voltage across a load RL . The circuit Transistors are of two types
consists of a series voltage-dropping resistance R and a (i) n-p-n transistor,
Zener diode in parallel with the load RL .
(ii) p-n-p transistor
+ I R
+ A transistor has three regions
(i) An emitter (E), which is most heavily doped, and is of
Fluctuating n Constant moderate size. It supplies large number of charge carriers,
p n Zener VZ RL DC output
DC input which are free electrons in an n-p-n transistor and holes
voltage diode voltage
p in a p-n-p transistor.
(ii) A base (B), which is very lightly doped and is very thin
–
– (thickness ~ 10 −5m).
The Zener diode is selected with Zener voltage Vz equal to (iii) A collector (C), which is moderately doped and is
the voltage desired across the load. thickest.
370 40 DAYS ~ JEE MAIN PHYSICS DAY THIRTY FOUR

A transistor is symbolically represented as shown in figures. ●

In common base configuration, AC current gain is defined
n-p-n p-n-p ∆I
as α = C
E E C ∆I V = constant
C CE

●
Value of α is slightly less than 1. In fact, 0.95 ≤ α ≤ 1.
∆P
B B ●
Power gain = o = β2AC × Resistance gain
(a) (b)
∆Pi
NOTE • Current gains α and β are correlated as
Transistor Action β=
α
or α = β
For proper functioning of a transistor, the emitter-base 1−α 1+ β
junction is forward biased, but the collector-base junction is
reverse biased. In an n-p-n transistor, electrons flow from Transistor as an Amplifier
emitter towards the base and constitute a current I E . n- p- n C
A transistor consisting of
Due to larger reverse bias at base-collector junction, most of two p-n junctions, one
these electrons further pass into the collector, constituting a B
forward biased and the
collector current IC . But a small percentage of electrons (less other reverse biased can
than 5%) may combine with holes present in base. These E Output
be used to amplify a weak Input
electrons constitute a base current I B . It is self evident, that signal. The forward
I E = IC + I B . biased junction has a low + – – +
Action of p-n-p transistor is also same, but with one difference resistance path, whereas
that holes are moving from emitter to base and then to the reverse biased
collector. junction has a high
A transistor can be connected in either of the following three resistance path. The weak input signal is applied across the
configurations forward biased junction, and the output signal is taken across
(i) Common Emitter (CE) configuration the reverse biased junction.
(ii) Common Base (CB) configuration Since, the input and output currents are almost equal, the
output signal appears with a much higher voltage. The
(iii) Common Collector (CC) configuration.
transistor, thus acts as an amplifier. Common-emitter
Generally, we prefer common emitter configuration, because configuration of transistor amplifier is given alongside.
power gain is maximum in this configuration.

Transistor as an Oscillator
Characteristics of a Transistor An electronic oscillator is a device that generates electrical
In common emitter configuration, variation of current on the oscillations of constant amplitude and of a desired frequency,
input side with input voltage (I B versus VBE ) is known as the without any external input.
input characteristics, and the variation in the output current
with output voltage (IC versus VCE ) is known as output The circuit providing such oscillation, is known as a tank
characteristics. From these characteristics, we obtain the oscillator, is using positive feedback.
values of following parameters
∆VBE L′
●
Input resistance, ri =
Inducting coupled

∆I B V = constant
CE
C
∆VCE B
●
Output resistance, ro = n-p-n
∆ IC I B = constant
B2
N
∆ IC
●
AC current gain, β= C
∆I B VCE = constant L
The current gain for common-emitter configuration
β ranges from 20 to 200.
K
∆ IC β B1
●
Transconductance, g m = =
∆VBE ri Some of the properties of the oscillator are
●
A transistor can be used as an amplifier. The voltage gain ●
Oscillator is using positive feedback.
of an amplifier will be given by ●
To work as an oscillator,
V R
A V = o = β⋅ C |Aβ| = 1; β → feedback factor
Vi RB
1 1
where, RC and RB are net resistances in collector and base ●
f = frequency of oscillation = × .
2π LC
circuits, respectively.
DAY THIRTY FOUR ELECTRONIC DEVICES 371

DAY PRACTICE SESSION 1

FOUNDATION QUESTIONS EXERCISE

1 The conductivity of a semiconductor increases with (c) Ec and Ev decreases, but E g increases
increase in temperature because (d) All Ec , E g and Ev decreases
(a) number density of free current carriers increases 6 In an unbiased p-n junction, holes diffuse from the
(b) relaxation time increases p -region to n-region because
(c) Both number density of carriers and relaxation time (a) free electrons in the n- region attract them
increases (b) they move across the junction by the potential difference
(d) number density of current carriers increases, relaxation (c) hole concentration in p-region is more as compared to
time decreases but effect of decrease in relaxation time n- region
is much less than increase in number of density (d) All of the above
2 Carbon, silicon and germanium atoms have four valence 7 Application of a forward bias to a p-n junction
electrons each. Their valence and conduction bands are
(a) increases the number of donors on the n-side
separated by energy band gaps represented by
(b) increases the electric field in the depletion zone
(E g ) C , (E g ) Si and (E g ) Ge , respectively. Which one of the
(c) increases the potential difference across the depletion
following relationship is true in their case? zone
(a) (E g ) C > (E g ) Si (b) (E g ) C = (E g ) Si (d) widens the depletion zone
(c) (E g ) C < (E g ) Ge (d) (E g ) C < (E g ) Si
8 When forward bias is applied to a p-n junction, what
3 In n-type silicon, which of the following statement is true happens to the potential barrierVB and the width of
(a) Electrons are majority carriers and trivalent atoms are charge depleted region x ?
the dopants
(a)VB increases, x decreases
(b) Electrons are minority carriers and pentavalent atoms
(b)VB decreases, x increases
are the dopants
(c)VB increases, x increases
(c) Holes are minority carriers and pentavalent atoms are (d)VB decreases, x decreases
the dopants
(d) Holes are majority carriers and trivalent atoms are the 9 The temperature (T ) dependence of resistivity (ρ) of a
dopants semiconductor is represented by
4 Carbon, silicon and germanium have four valence ρ ρ
electrons each. At room temperature, which one of the
following statements is most appropriate? ª AIEEE 2012 (a) (b)

(a) The number of free conduction electrons is significant in O

O
C but small in Si and Ge T T
(b) The number of free conduction electrons is negligibly ρ ρ
small in all the three
(c) The number of free electrons for conduction is (c) (d)
significant in all the three
(d) The number of free electrons for conduction is O O
significant only in Si and Ge but small in C T T

5 If the lattice constant of this semiconductor is decreased, 10 In figure , V0 is the potential barrier across a p-n junction,
then which of the following is correct? ª AIEEE 2010 when no battery is connected across the junction.
Conduction 1
Ec 2
bandwidth
3
Band gap Eg
V0
Valence
Ev
bandwidth
(a) All Ec , E g and Ev increases
(b) Ec and Ev increases, but E g decreases
372 40 DAYS ~ JEE MAIN PHYSICS DAY THIRTY FOUR

(a) 1 and 3 both corresponds to forward bias of junction 15 The circuit has two oppositely connected ideal diodes in
(b) 3 corresponds to forward bias of junction and 1 parallel. What is the current flowing in the circuit?
correspond to reverse bias of junction 4Ω
(c) 1 corresponds to forward bias and 3 corresponds to D1
reverse bias of junction D2
(d) 3 and 1 both corresponds to reverse bias of junction 12 V
3Ω 2Ω
11 For the given circuit of p-n junction diode, which of the
following statements is correct?
(a) 1.71 A (b) 2.00 A (c) 2.31 A (d) 1.33 A
R p n
16 In the following circuits, which one of the diodes is
+ – reverse biased?
+ 10 V – 12V
V
(a) In forward biasing the voltage across R is V (a) (b) R
R
(b) In forward biasing the voltage across R is 2 V
(c) In reverse biasing the voltage across R is V +5V – 10 V
(d) In reverse biasing the voltage across R is 2 V
12 In the case of forward biasing of p-n junction, which one + 5V
of the following figures correctly depicts the direction of (c) (d)
the flow of charge carriers? R
VVb R
VV Bb
pp n
n pp nn
– 10V
(a) (b)
V b
17. The forward biased diode connection is ª JEE Main 2014
(a) 2V +4V
VVV BB b
pp nn (b) –2V +2V
(c) (d) None of these
(c) +2V –2V

(d) –3V –3V

13 A junction diode is connected to a 10 V source and103 Ω
rheostat figure. The slope of load line on the 18 The reading of the ammeter for a silicon diode in the
characteristic curve of diode will be given circuit is ª JEE Main 2018
200Ω

103 Ω
10 V

+ – 3V
−2 −1 −3 −1 −4 −1 −5 −1 (a) 0 (b) 15 mA (c) 11.5 mA (d) 13.5 mA
(a) 10 AV (b) 10 AV (c) 10 AV (d) 10 AV
14 In a forward biased p-n junction diode, the potential 19 In a full-wave rectifier circuit operating from 50 Hz
barrier in the depletion region willp be of the form mains frequency, the fundamental frequency in the
p nn p n output would be
p n
P o te n tia l
Potential PPotential
o te n tia l (a) 50 Hz (b) 25 Hz (c) 100 Hz (d) 70.7 Hz
b a rrie r
barrier bbarrier
a rrie r
(a) (b) 20 A p-n junction (D) shown in the figure can act as a
rectifier. An alternating current source (V ) is connected in
the circuit. ª AIEEE 2013
p n p n
n p n
p P o tePotential
n tia l PPotential
o te n tia l D
b a rrie r
barrier bbarrier
a rrie r
(c) (d) R
V~
DAY THIRTY FOUR ELECTRONIC DEVICES 373

I I (c) Solar cell, Light dependent resistance, Zener diode,

Simple diode
(a) (b)
(d) Zener diode, Solar cell, Simple diode, Light dependent
t t resistance
I I
24 In a common emitter amplifier circuit using an
(c) (d) n-p-n transistor, the phase difference between the input
t t and the output voltages will be ª JEE Main 2017 (Offline)
(a) 90° (b) 135° (c) 180° (d) 45°
21 Zener breakdown in a semiconductor diode occurs,
when 25 When A is the internal stage gain of an amplifier and B is
(a) forward current exceeds certain value
the feedback ratio, then the amplifier becomes as
oscillator if
(b) reverse bias exceeds certain value
(c) forward bias exceeds certain value (a) B is negative and magnitude of B = A / 2
(b) B is negative and magnitude of B = 1/ A
(d) potential barrier is reduced to zero (c) B is negative and magnitude of B = A
22 The I-V characteristics of an LED is ª AIEEE 2013 (d) B is positive and magnitude of B = 1/ A

R Y GB
R
Direction (Q. Nos. 26-30) Each of these questions contains
Y two statements : Statement I and Statement II. Each of these
I
(a) (b) G questions also has four alternative choices, only one of which
B
is the correct answer. You have to select one of the codes (a),
O V O V (b), (c) and (d) given below.
V O (a) Statement I is true, Statement II is true; Statement II is
the correct explanation for Statement I
I R (b) Statement I is true, Statement II is true; Statement II is
(c) (d) Y
G not the correct explanation for Statement I
B (c) Statement I is true; Statement II is false
O V I
(d) Statement I is false; Statement II is true

23 Identify the semiconductor devices whose 26 Statement I If forward current changes by 1.5 mA when
characteristics are as given below, in the order forward voltage in semiconductor diode is changed from
(p),(q),(r),(s). ª JEE Main 2016 (Offline) 0.5 V to 2 V, the forward resistance of diode will be 1 Ω.
∆Vf
I I Statement II The forward resistance is given by Rf =
∆If

27 Statement I A Zener diode is used to get constant

(p) V (q) V voltage at variable current under reverse bias.
Statement II The most popular use of Zener diode is as
voltage regulator.
28 Statement I Light Emitting Diode (LED) emits
I I
spontaneous radiation.
Dark Resistance
Statement II LED are forward biased p-n junctions.
(r) V (s) V 29 Statement I When base region has larger width, the
Intensity
of light
collector current increases.
Illuminated Statement II Electron-hole combination in base results in
increases of base current.
Choose the correct order
30 Statement I In a common-emitter transistor amplifier the
(a) Simple diode, Zener diode, Solar cell, Light dependent input current is much less than output current.
resistance
Statement II The common-emitter transistor amplifier has
(b) Zener diode, Simple diode, Light dependent resistance,
very high input impedance.
Solar cell
374 40 DAYS ~ JEE MAIN PHYSICS DAY THIRTY FOUR

DAY PRACTICE SESSION 2

PROGRESSIVE QUESTIONS EXERCISE

1 The input resistance of a common-emitter transistor 10 V
amplifier, if the output resistance is 500 k Ω, the current
gain α = 0.98 and the power gain is 6.0625 × 106 is
(a) (b)
(a) 198 Ω (b) 300 Ω (c) 100 Ω (d) 400 Ω
2 If the resistivity of copper is 1.7 × 10−6 Ω-m, then the
–10 V
mobility of electrons in copper, if each atom of copper
contributes one free electron for conduction is
[the atomic weight of copper is 63.54 and density is 5V
8.96 g/cc] (c) (d)
(a) 23.36 cm2 / Vs (b) 503.03 cm2 / Vs
–5 V
(c) 43.25 cm2 / Vs (d) 88 cm2 / Vs
3 A red LED emits light at 0.1 W uniformly around it. The 7 To plot forward characteristic of p-n junction diode, the
amplitude of the electric field of the light at a distance of correct circuit diagram is
1 m from the diode is ª JEE Main 2015
(a) 1.73 V/m (b) 2.45 V/m

(0 – 20) A
(c) 5.48 V/m (d) 7.75 V/m
+ +
4 A working transistor with its three legs marked P, Q and (a) E V – (0 – 1) V A
–
R is tested using a multimeter.
No conduction is found between P and Q. By conneting
the common (negative) terminal of the multimeter to R
and the other (positive) terminal to P or Q. Some
resistance is seen on the multimeter. Which of the

(0 – 1000) mA
following is the true for the transistor? ª AIEEE 2013
(a) It is an n-p-n transistor with R as base + +
(b) E V – (0 – 2) V A
–
(b) It is a p-n-p transistor with R as collector
(c) It is a p-n-p transistor with R as emitter
(d) It is an n-p-n transistor with R as collector
5 A piece of copper and another of germanium are cooled
from room temperature to 77 K, the resistance of
(a) each of them increases
(0 – 1000) mA

(b) each of them decreases

+ –
(c) copper decreases and germanium increases (c) E V – (0 – 2) V A
+
(d) copper increases and germanium decreases
6 If in a p-n junction diode, a square input signal of 10 V is
applied as shown.
5V
(0 – 1000) mA

RL
+ –
(d) E V – (0 – 2) V A
+

–5 V
Then, the output signal across RL will be
DAY THIRTY FOUR ELECTRONIC DEVICES 375

8 A figure is given below 10 The length of germanium rod is 0.928 cm and its area of
D3 cross-section is 1 mm 2. If for germanium
5Ω
ni = 2.5 × 1019m −3, µh = 019
. m 2 V −1 s −1,
D1 10Ω µe = 0.39 m 2V −1s −1, then resistance is
(a) 2.5 k Ω (b) 4.0 k Ω (c) 5.0 k Ω (d) 10.0 k Ω
20Ω
D2 5Ω 11 In the figure, potential difference between A and B is
A
10 k Ω
10 V
30 V 10 k Ω
The current through the battery is 10 k Ω
(a) 0.5 A (b) 1 A
(c) 1.5 A (d) 2 A
9 In the given circuit, the current through the zener diode is B

I (a) 10 V (b) 20 V (c) 30 V (d) 40 V

12 In a common-base mode of a transistor, the collector
R1 500Ω
current is 5.488 mA for an emitter current of 5.60 mA. The
value of the base current amplification factor (β) will be
15 V
ª AIEEE 2011
(a) 49 (b) 50 (c) 51 (d) 48
R2 1500Ω
Vz=10 V 13 For a common emitter configuration, if α and β have their
usual meanings, the incorrect relationship between α and
β is ª JEE Main 2016 (Offline)
(a) 10 mA (b) 6.67 mA
(c) 5 mA (d) 3.33 mA 1 1 β β β2
(a) = + 1 (b) α = (c) α = (d) α =
α β 1− β 1+ β 1+ β2

ANSWERS

SESSION 1 1 (d) 2 (a) 3 (c) 4 (d) 5 (c) 6 (c) 7 (a) 8 (d) 9 (c) 10 (b)
11 (a) 12 (c) 13 (b) 14 (d) 15 (b) 16 (d) 17 (c) 18 (c) 19 (c) 20 (c)
21 (b) 22 (a) 23 (a) 24 (c) 25 (d) 26 (d) 27 (a) 28 (b) 29 (d) 30 (c)

SESSION 2 1 (a) 2 (c) 3 (b) 4 (a) 5 (c) 6 (d) 7 (b) 8 (c) 9 (d) 10 (b)
11 (a) 12 (a) 13 (a,c)

Hints and Explanations

SESSION 1 (E g ) C = 5.2 eV, 4 The number of free electrons for
1 Based on the theory discussed, we can (E g ) Si = 1.21 eV conduction is significant only in Si and Ge
conclude that when temperature and (E g ) Ge = 0.75eV but small in C, as C is an impurity.
increases, number density of current Thus, (E g ) C > (E g ) Si 5 If lattice constant of semiconductor is
carriers increases in the and (E g ) C > (E g ) Ge decreased, then Ec and E v decreases but E g
semiconductor, relaxation time increases.
decreases but effect of relaxation time 3 n-type is obtained by doping the Ge or
will be ignored. Si with pentavalent atoms. In n-type 6 In an unbiased p -n junction, the diffusion
semiconductor, electrons are majority of charge carriers across the junction takes
2 Carbon, silicon and germanium are carriers and holes are minority place from higher concentration to lower
semiconductors. carriers, hence option (c) is correct. concentration. Thus, option (c) is correct.
376 40 DAYS ~ JEE MAIN PHYSICS DAY THIRTY FOUR

7 In forward biasing more number of 16 For reverse biasing of an ideal diode, continuously without being damaged.
electrons enter in n-side from battery the potential of n-side should be higher The Zener diode is used as a voltage
thereby increasing the number of than potential of p-side. Only option (d) regulator as constant voltage at variable
donors on the n-side. is satisfying the criterion for reverse current under reverse bias is obtained
biasing. from it.
8 In a p-n junction in forward bias
potential barrier V B as well as the width 17 For forward biased condition of a p-n 28 When a junction diode is forward biased
of charge depleted region x decreases. junction, p-junction should be at higher energy is released at the junction due to
potential and n-junction should be at recombination of electrons and holes. In
9 The resistivity of a semiconductor lower potential. So, option (c) is correct. the junction diode made up of gallium
decreases with increase in temperature arsenide or indium phosphide, the
exponentially. Hence, option (c) is 18 Potential drop in a silicon diode in energy is released in visible region. Such
correct. forward bias is around 0.7 V. a junction diode is called Light Emitting
In given circuit, potential drop across Diode or LED. The radiated energy
10 When p-n junction is forward biased, it 200 Ω resistor is emitted by LED is equal or less than band
opposes the potential barrier across ∆V net 3 − 07
. gap of semiconductor.
I = =
junction. When is reverse biased, it R 200
supports the same. 29 When base region has larger width,
⇒ I = 0.0115 A ⇒ I = 11.5 mA
electron-hole combination increases the
11 In forward biasing for an ideal diode 19 Given, f = 50 Hz and T = 1 base current. The output collector
resistance of diode is zero and whole 50 current decreases by the relation,
resistance in the circuit is R. Hence, For full-wave rectifier, T1 =
T
=
1 I E = I B + IC .
voltage across R is V. 2 100
and f1 = 100 Hz
30 The common-emitter transistor amplifier
12 Forward bias is obtained when the has input resistance equal to 1 kΩ
negative terminal of the battery is 20 Given figure is half wave rectifier as diode (approx.) and output resistance equal to
connected to the n-side and the positive conducts only for positive half-cycle. 10 kΩ (approx.). The output current in
terminal to the p -side of the Hence, output waveform is obtained for CE amplifier is much larger than the
semiconductor. Then, the negative half cycle only as in figure (c). input current.
terminal will repel free electrons in the 21 Zener breakdown in a semiconductor
n-section towards the junction and the diode occurs when reverse bias exceeds
SESSION 2
positive terminal on the p-side will certain value, which is known as 1 Power gain = Current gain × Voltage
push the holes towards the junction. breakdown or Zener or Avalanche gain
voltage. α 0.98
13 If V is the voltage across the junction Current gain = β = =
and I is the circuit current, then 22 For same value of current higher value 1 − α 1 − 0.98
E V V E of voltage is required for higher = 49
V + IR = E or I = − = − +
R R R R frequency.
 500 × 103 
 R2 
Slope of load line
23 Zener diode works in breakdown AV = 49   As, A v = β R 

1 1  R1 
 1
=− = = 10−3 AV −1 region.
R 1000
So, Simple diode → (p) Power gain = 6.0625 × 106
14 The diode is forward biased, hence the Zener diode → (q)  500 × 103 
= 49 ×   × 49
potential barrier decreases and becomes Solar cell → (r)  R1 
less. Though in both the options (c) and Light dependent resistance → (s) R1 = 198 Ω
(d). The diode is forward biased but in
24 2 Mobility of electron (µ ) = σ
Vi Vo
(d ) the barrier width is less. …(i)
ne
15 In the given circuit diode D1 is reverse t t 1
Resistivity (ρ) = …(ii)
biased while D2 is forward biased, so the (Input) (Output) σ
circuit can be redrawn as From Eqs. (i) and (ii), we get
I 4Ω In a CE n-p-n transistor amplifier output 1
is 180° out of phase with input. µ = …(iii)
neρ
D2 25 The condition for a circuit to oscillate where, n = number of free electrons per
are unit volume
12 V 2Ω
(i) feedback should be positive N0 × d
1 n=
(ii) output voltage feedback B = atomic weight
A 6.023 × 1023 × 8.96
∆V f =
(2 − 0.5)
Apply KVL to get current flowing 26 R f = = = 103 Ω 63.54
through the circuit ∆I f 1.5 × 10−3 = 8.5 × 1022 …(iv)

− 12 + 4 I + 2I = 0 = 1 kΩ From Eqs. (iii) and (iv), we get

1
12 27 Zener diodes are specially designed µ =
or I = = 2A junction diodes, which can operate in 8.5 × 1022 × 1.6 × 10−19 × 17. × 10−6
6
the reverse breakdown voltage region = 43.25cm2 / Vs
DAY THIRTY FOUR ELECTRONIC DEVICES 377

3 Consider the LED as For V i < 0, the diode is reverse biased The current through R2 is
a point source of and hence offer infinite resistance, so V 10
I R2 = R2 =
light. circuit would be like as shown in Fig. R2 1500
r
Let power of the P (ii) and Vo = 0.
= 0.667 × 10−2 A
LED is P. For V i > 0, the diode is forward biased = 6.67 mA
Intensity at r from and circuit would be as shown in Fig.
The voltage drop across R1 is
the source (iii) and Vo = V i .
P V R1 = 15V − V R2
I = ...(i) Hence, the option (d) is correct.
= 15 − 10 = 5V
4 πr 2
1
7 For forward bias mode, the p-side of The current through R1 is
As we know that, I = ε0E 20 c ...(ii) diode has to be at higher potential than V 5
2
n-side. The meters used are DC, so we I R1 = R1 = = 10−2 A
From Eqs. (i) and (ii), we can write R1 500
have to be careful while connecting
P 1 = 10 mA
= ε0E 20 c them w.r.t. polarity.
4 πr 2 2 The current through the zener diode is
Last point is to decide the range of I z = I R1 − I R2 = (10 − 6.67)mA
2P 2 × 01
. × 9 × 109
or E 20 = = meters, the range of meters has to be in
4 πε 0r c
2
1 × 3 × 108 = 333
. mA
such a way that we can have the
or E 20 = 6 ⇒ E 0 = 6 = 2.45 V/m readings which leads to plot on realistic 10 ∴ R = ρl = L Q ρ = 1 
 
scale. If we take 0-20 A ammeter, then A n i e (µ e + µ h )A  σ
4 Since, no conduction is found when reading we read from this is tending to 0 0.928 × 10−2
multimeter is connected across P and Q, =
it means either both P and Q are n-type to 5 divisions which is not fruitful. [2.5 × 1019 × 1.6 × 10−19
or p-type. So, it means R is base, when In options (c) and (d), the polarity of (0.39 + 0.19) × 10−6]
R is connected to common terminal and ammeter is not correct. Hence, (b) is
conduction is seen when other terminal = 4000 Ω or 4 k Ω
correct circuit.
is connected to P or Q. So, it means 11 For forward biased p-n junction diodes
transistor is n-p-n with R as base. 8 In the given circuit, diode D1 is reverse its resistance is zero.
biased, so it will not conduct. Diode D2
5 We know that resistance of conductor is So, net resistance of circuit
and D3 are forward biased, so they 10 × 10
directly proportional to temperature
conduct. The equivalent circuit is as = 10 + = 15kΩ
(i.e. R ∝ ∆t ), while resistance of 10 + 10
shown below: V 30
semiconductor is inversely proportional Net current I = =
D3
to temperature  i.e. R ∝
1 5Ω R 15 × 103
.
 ∆t  = 2 × 10−3 A
Therefore, it is clear that resistance of So, potential difference across
conductor decreases with decrease in AB = 2 × 10−3 × 5 × 103 = 10V
temperature or vice-versa, while in case 20Ω
of semiconductor, resistance increases D2 5Ω 12 ∴ β = IC and I E = IC + I B
with decrease in temperature or IB
vice-versa. Since, copper is pure IC
∴ β=
conductor and germanium is a I E − IC
semiconductor, hence due to decrease 10 V
Now, the equivalent resistance of circuit 5488
.
in temperature, resistance of conductor = = 49
decreases while that of semiconductor is . − 5488
560 .
(5 + 5) × 20 10 × 20
increases. Req = = 13 As, we know, in case of a
(5 + 5) + 20 10 + 20
6 During − ve cycle, diode will not allow common-emitter configuration, DC
200 20
the signal to pass. = = Ω current gain,
30 3 I
5V Then, current through the battery, α = c.
Ie
V 10 3
I = = = where, Ic is collector current and Ie is
Req 20 / 3 2
Vi RL Vo emitter current
= 1.5A and AC current gain,
I
9 The voltage drop across R2 is β = c.
Ib
–5 V V R2 = V2 = 10 V
Fig. (i) where, Ib is base current.
I Also, Ie = Ib + Ic
Dividing whole equation by Ic , we get
Ie I
R1 500Ω ⇒ = b +1
Vi Vo Vi Vo Ic Ic
15 V IR2
1 1
⇒ = +1
R2 1500Ω
Iz α β
Vz=10 V
β
⇒ α =
Fig. (ii) Fig. (iii) 1+ β