IM67D130A: AEC-Q103 Qualified High Performance Digital XENSIV MEMS Microphone

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IM67D130A

AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone

Features
• Dynamic range of 103dB for best speech performance
- Signal to noise ratio of 67dB(A) SNR
- <1% total harmonic distortions up to high SPL levels
- Acoustic overload point at 130dBSPL
• Automotive qualification
• Close sensitivity and phase matching for use in arrays
• Flat frequency response with low frequency roll off and very fast analog to digital conversion speed for best
ANC performance
• Digital PDM output
• Extended availability to match automotive design cycles

Product validation
Technology qualified for industrial applications.
Product qualified according to AEC-Q103-003.

Potential applications
• Hands free calling
• Emergency call
• Voice control
• Active noise cancellation / Road noise cancellation (ANC/RNC)
• Siren detection
• Road condition detection

Ordering Information
Table 1 Order information
Product name Package Marking Ordering code
IM67D130A PG-LLGA-5-4 IM67DA SP005582032

Datasheet Please read the Important Notice and Warnings at the end of this document Rev 1.00
www.infineon.com 18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone

Product description
The device is designed for applications where low self-noise (high SNR), wide dynamic range, low distortions
and a high acoustic overload point is required.
Infineon's Dual Backplate MEMS technology is based on a miniaturized symmetrical microphone design, similar
as utilized in studio condenser microphones and results in high linearity of the output signal within a high
dynamic range. The microphone distortion does not exceed 1% even up to very high sound pressure levels.
With its low equivalent noise floor the microphone is no longer the limiting factor in the audio signal chain and
enables higher performance of voice recognition algorithms.
The digital microphone ASIC contains an extremely low-noise preamplifier and a high-performance sigma-delta
ADC. Different power modes can be selected in order to suit specific current consumption requirements.
The tight manufacturing tolerance, combined with the fact that each device is calibrated with an advanced
Infineon calibration algorithm, results in small sensitivity and phase matching tolerances. This makes it a
perfect device for beam forming arrays and multi-microphone applications.

Datasheet 2 Rev 1.00


18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone

Table of contents

Table of contents

Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1 Typical performance characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4 General product characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4.1 Acoustic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4.1.1 Free field frequency response . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4.2 Electrical parameters and characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.2.2 Functional range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
4.2.4 Timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5 Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5.1 Use cases . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5.2 Typical stereo application circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
6 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6.1 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6.2 Footprint and stencil recommendation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6.3 Reflow soldering and board assembly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6.4 Packing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
7 Reliability specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Datasheet 3 Rev 1.00


18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone

1 Typical performance characteristics

1 Typical performance characteristics


Test conditions: VDD = 1.8V, fCLK = 3.072 MHz, no load on DATA

10
Normalized Output Level [dB]

8
10
6
4
2

THD [%]
1
0
-2
-4 0,1
-6
-8
-10 0,01
10 100 1000 10000 90 95 100 105 110 115 120 125 130 135
Frequency [Hz] Input Sound Pressure Level [dB]

Plot 1: Typical free field response Plot 2: Typical THD vs. SPL

40 1.000
35
30
Phase Response [°]

Group Delay [µs]

25
100
20
15
10
10
5
0
-5
-10 1
10 100 1000 100 1000
Frequency [Hz] Frequency [Hz]

Plot 3: Typical phase response vs. frequency Plot 4: Typical group delay vs. frequency

1200 -110

fclock=3.072MHz -115
1000
Spectral Noise Density

-120
fclock=2.4MHz
[dBFS/sqrt(Hz)]

800 -125
IDD [µA]

fclock=1.536MHz -130
600
-135
400 fclock=768kHz -140
-145
200
-150

0 -155
1,6 2,1 2,6 3,1 3,6 10 100 1000 10000
VDD [V] Frequency [Hz]

Plot 5: IDD vs. VDD Plot 6: Typical noise floor (unweighted)

Figure 1 Typical performance characteristics

Datasheet 4 Rev 1.00


18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone

2 Block diagram

2 Block diagram

VDD

MEMS BIAS
VOLTAGE REGULATORS
CHARGE PUMP

BACKPLATE 1 DATA
1-BIT
MEMBRANE DIGITAL SIGNAL
AMP ADC
PROCESSING
PDM LR
BACKPLATE 2 INTERFACE
CLOCK
MEMS POWER
DIGITAL CORE MODE
DETECTOR

CALIBRATION
COEFFICIENTS
ASIC
GROUND

Figure 2 Block diagram

Datasheet 5 Rev 1.00


18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone

3 Pin configuration

3 Pin configuration
The figure below shows the pin configuration of the device

1 3

2 4

Bottom view

Figure 3 Pin configuration

Table 2 Pin configuration


Pin number Name Description
1 DATA PDM data output
2 VDD Power supply
3 CLOCK PDM clock input
4 LR PDM left/right select
5 GND Ground

Datasheet 6 Rev 1.00


18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone

4 General product characteristics

4 General product characteristics

4.1 Acoustic characteristics


Test conditions (unless otherwise specified in the table): VDD = 1.8V±0.1V, fCLK = 3.072MHz, TA = 25°C±5°C, audio
bandwidth 20Hz to 20kHz, LR pin grounded, no load on DATA, tCR = tCF = 9ns

Table 3 Acoustic specifications

Parameter Symbol Values Unit Note or condition


Min. Typ. Max.
Sensitivity Sens -37 -36 -35 dBFS 1kHz, 94 dBSPL, all operating
modes
Acoustic Overload AOP - 130 - dBSPL THD = 10%, all operating modes
Point
Signal to Noise Ratio, SNR - 67 - dB(A) A-Weighted
fCLK=3.072MHz
Signal to Noise Ratio, SNRM2 - 67 - dB(A) A-Weighted
fCLK=2.4MHz

Signal to Noise Ratio, SNRM3 - 66 - dB(A) A-Weighted


fCLK=1.536MHz
Signal to Noise Ratio, SNRLPM - 64 - dB(A) 20Hz to 8kHz bandwidth, A-
fCLK=768kHz Weighted

Noise Floor, fCLK = NF - -103 - dBFS(A) A-Weighted


3.072MHz
Noise Floor - Mode2, NFM2 - -103 - dBFS(A) A-Weighted
fCLK = 2.4MHz
Noise Floor - Mode3, NFM3 - -102 - dBFS(A) A-Weighted
fCLK = 1.536MHz

Noise Floor - LPM, NFLPM - -100 - dBFS(A) 20Hz to 8kHz bandwidth, A-


fCLK = 768kHz Weighted

Total Harmonic THD94 - 0.5 - % Measuring 2nd to 5th harmonics;


Distortion, 94dBSPL 1kHz, all operating modes

Total Harmonic THD128 - 1.0 - % Measuring 2nd to 5th harmonics;


Distortion, 128dBSPL 1kHz, all operating modes

Total Harmonic THD129 - 2.0 - % Measuring 2nd to 5th harmonics;


Distortion, 129dBSPL 1kHz, all operating modes

Total Harmonic THD130 - 10.0 - % Measuring 2nd to 5th harmonics;


Distortion, 130dBSPL 1kHz, all operating modes
Low Frequency fC_LP - 28 - Hz -3dB point relative to 1kHz
Cutoff Point
(table continues...)

Datasheet 7 Rev 1.00


18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone

4 General product characteristics

Table 3 (continued) Acoustic specifications

Parameter Symbol Values Unit Note or condition


Min. Typ. Max.
Group Delay, 250Hz tgd_250 - 70 - µs

Group Delay, 600Hz tgd_600 - 15 - µs

Group Delay, 1kHz tgd_1000 - 6 - µs

Group Delay, 4kHz tgd_4000 - 1 - µs


Phase Response, Φ75 - 19 - °
75Hz
Phase Response, Φ1000 - 2 - °
1kHz
Phase Response, Φ3000 - -1 - °
3kHz

Directivity: The device has an omnidirectional pickup pattern.


Polarity: The device has a positive polarity. Positive pressure increases density of 1's, negative pressure
decreases density of 1's in data output)

4.1.1 Free field frequency response

12
Upper Limit (dB)
10
Lower Limit (dB)
Normalized Output Level [dB]

8
6
4
2
0
-2
-4
-6
-8
-10
-12
10 100 1000 10000
Frequency (Hz)

Figure 4 Free field frequency response

Datasheet 8 Rev 1.00


18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone

4 General product characteristics

Table 4 Free field frequency response, normalized to 1kHz sensitivity value


Frequency (Hz) Upper Limit (dB) Lower Limit (dB)
25 -2 -5
60 +0.5 -1.5
800 +1 -1
1000 0 0
1200 +1 -1
6000 +1 -2
8000 +4 -2
15000 +9 -2

4.2 Electrical parameters and characteristics

4.2.1 Absolute maximum ratings


Table 5 Absolute maximum ratings

Parameter Symbol Values Unit Note or condition


Min. Typ. Max.
Voltage on any Pin Vmax - - 4 V
Storage Temperature TS -40 - 125 °C

Attention: Stresses above those listed under “Absolute maximum ratings” may cause permanent damage
to the device. This is a stress rating only and functional operation of the device at these or any
other conditions above those indicated in the section "Functional range" of this datasheet is not
implied. Furthermore, only single error cases are assumed. More than one stress/error case may
also damage the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. During absolute maximum rating overload conditions the voltage on VDD pins with
respect to ground (GND) must not exceed the values defined by the absolute maximum ratings.
Lifetime statements are an anticipation based on an extrapolation of Infineon’s qualification
test results. The actual lifetime of a component depends on its form of application and type of
use etc. and may deviate from such statement. Lifetime statements shall in no event extend the
agreed warranty period.

Datasheet 9 Rev 1.00


18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone

4 General product characteristics

4.2.2 Functional range


Table 6 Functional range

Parameter Symbol Values Unit Note or condition


Min. Typ. Max.
Supply Voltage VDD 1.62 - 3.60 V A 100nF bypass capacitor
should be placed close to the
microphone's VDD pin to ensure
best SNR performance
Ambient operating TA -40 - +105 °C
temperature
Clock Frequency fCLK_HPM 2.9 3.072 3.3 MHz
Range, HPM
Clock Frequency fCLK_M2 2.1 2.4 2.65 MHz
Range, Mode2
Clock Frequency fCLK_M3 1.05 1.536 1.9 MHz
Range, Mode3
Clock Frequency fCLK_LPM 400 768 950 kHz
Range, LPM
Clock Frequency fCLK_sb - - 250 kHz DATA = high-Z
Range, Standby
mode
PDM Clock fCLK 0.4 - 3.30 MHz
Frequency
VDD Ramp-up Time VDD_ru - - 50 ms Time until VDD ≥ VDD_min
Clock Duty Cycle CLKduty 40 - 60 % fCLK < 2.65MHz
Clock Duty Cycle, CLKduty_HPM 48 - 52 % fCLK ≥ 2.9MHz
High performance
mode
Clock Rise/Fall Time tCR / tCF - - 13 ns
Input Logic Low Level VIL -0.3 - 0.35xVDD V
Input Logic High VIH 0.65xVDD - VDD+0.3 V
Level
Output Load Cload - - 200 pF
Capacitance on DATA

4.2.3 Electrical characteristics


Test conditions (unless otherwise specified in the table): VDD = 1.8V ± 0.1V, TA = 25°C ± 5°C

Datasheet 10 Rev 1.00


18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone

4 General product characteristics

Table 7 General electrical characteristics

Parameter Symbol Values Unit Note or condition


Min. Typ. Max.
Current IDD_HPM - 980 1300 μA No load on DATA
Consumption, HPM
Current IDD_M2 - 800 1050 μA No load on DATA
Consumption, Mode2
Current IDD_M3 - 620 800 μA No load on DATA
Consumption, Mode3
Current IDD_LPM - 300 380 μA No load on DATA
Consumption, LPM
Current Istandby - 25 50 μA No load on DATA
Consumption,
Standby mode
Current Iclock_off - - 1 μA CLOCK pulled low
Consumption, Clock
off mode
Short Circuit Current Ishort 1 - 20 mA Grounded DATA pin
Power Supply PSR1k_NM - -80 - dBFS 100mVpp sine wave on VDD swept
Rejection from 200Hz to 20kHz

Power Supply PSR217_NM - -86 - dBFS(A) 100mVrms, 217Hz square wave on


Rejection VDD, A-weighted

Startup Time, ±0.5dB tstart-up - - 20 ms Time to start up in all operating


sensitivity accuracy modes after VDD_min and CLOCK
have been applied
Startup Time, ±0.2dB tstart-up_HP - - 50 ms Time to start up in all operating
sensitivity accuracy modes after VDD_min and CLOCK
have been applied
Mode Switch Time, tmode-switch - - 20 ms Time to switch between
±0.5dB sensitivity operating modes. VDD remains on
accuracy during the mode switch
Mode Switch Time, tmode- - - 50 ms Time to switch between
±0.2dB sensitivity switch_HP operating modes. VDD remains on
accuracy during the mode switch
Hysteresis Width Vhys 0.1xVDD - 0.29xVDD V

Output Logic Low VOL - - 0.3xVDD V Iout= 2mA


Level

Output Logic High VOH 0.7xVDD - - V Iout= 2mA


Level
(table continues...)

Datasheet 11 Rev 1.00


18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone

4 General product characteristics

Table 7 (continued) General electrical characteristics

Parameter Symbol Values Unit Note or condition


Min. Typ. Max.
Delay Time for DATA tDD 40 - 80 ns Delay time from CLOCK edge
Driven (0.5xVDD) to DATA driven
Delay Time for DATA tHZ 5 - 30 ns Delay time from CLOCK edge
High-Z (0.5xVDD) to DATA high impedance
state 1)
Delay Time for DATA tDV - - 100 ns Delay time from CLOCK edge
Valid (0.5xVDD) to DATA valid (<0.3xVDD
or >0.7xVDD) 2)

4.2.4 Timing diagram

Figure 5 Timing diagram

1 tHZ is dependent upon Cload


2 Load on DATA: Cload = 100pF, Rload = 100kΩ
Datasheet 12 Rev 1.00
18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone

5 Application information

5 Application information

5.1 Use cases


• Total Harmonic Distortion (THD) below 1% up to high sound pressure levels (SPL)
- Clear speech in a wide dynamic range
- Reliable voice commands during high background noise
- Effective active noise cancellation even close to loud noise source
• High Signal to Noise Ratio (SNR)
- Far field audio signal pick-up
- Low volume audio and whispered voice capturing
- Good performance with speech recognition algorithms
- Microphone noise is no longer limiting the audio chain
• Close sensitivity and phase matching
- Good performance in audio beamforming
- High and precise attenuation of background noise
- Full utilization of voice algorithms capability
• Flat frequency response with low fC_LP (low frequency cutoff point) and small group delay
- Good performance in active noise cancellation systems
- Excellent speech quality over full frequency range
• Power optimized modes
- Low current consumption for always on applications
- Long operating time of battery powered devices

Datasheet 13 Rev 1.00


18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone

5 Application information

5.2 Typical stereo application circuit

VDD

MIC 1 MIC 2
CVDD CVDD
VDD VDD
LR LR
GND GND
DATA CLK CLK DATA
RTERM

RTERM
DATA CLK

CODEC

Figure 6 Typical stereo application circuit


Note: For best performance it is strongly recommended to place a 100nF (CVDD_typical) capacitor between
VDD and ground. The capacitor should be placed as close to VDD as possible. A termination resistor
(RTERM) of about 100Ω may be added to reduce the ringing and overshoot on the output signal.

Datasheet 14 Rev 1.00


18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone

6 Package information

6 Package information
This product is compliant to RoHS

6.1 Package outline

Figure 7 Package outline drawing

6.2 Footprint and stencil recommendation


The acoustic port hole diameter in the PCB should be larger than the acoustic port hole diameter of the MEMS
microphone to ensure optimal performance. A PCB sound port size of radius 0.4 mm (diameter 0.8mm) is
recommended.
The board pad and stencil aperture recommendations shown in the figure below are based on Solder Mask
Defined (SMD) pads. The specific design rules of the board manufacturer should be considered for individual
design optimizations or adaptations.

Datasheet 15 Rev 1.00


18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone

6 Package information

Figure 8 Footprint and stencil recommendation

6.3 Reflow soldering and board assembly


Infineon MEMS microphones are qualified in accordance with the IPC/JEDEC J-STD-020D-01. The moisture
sensitivity level of MEMS microphones is rated as MSL1. For PCB assembly of the MEMS microphone the widely
used reflow soldering using a forced convection oven is recommended.
The soldering profile should be in accordance with the recommendations of the solder paste manufacturer to
reach an optimal solder joint quality. The reflow profile shown in the figure below is recommended for board
manufacturing with Infineon MEMS microphones.

Figure 9 Recommended reflow profile

Datasheet 16 Rev 1.00


18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone

6 Package information

Table 8 Reflow profile limits


Profile feature Symbol Pb-free assembly Sn-Pb Eutectic assembly
Preheat temperature min. Tsmin 150°C 100°C
Preheat temperature max. Tsmax 200°C 150°C
Preheat time (Tsmin to Tsmax) ts 60-120 seconds 60-120 seconds
Ramp-up rate (TL to TP) 3°C/second max. 3°C/second max.
Liquidous temperature TL 217°C 183°C
Time maintained above TL tL 60-150 seconds 60-150 seconds
Peak temperature TP 260°C +0°C/-5°C 235°C +0°C/-5°C
Time within 5°C of actual peak tP 20-40 seconds 10-30 seconds
temperature (see note below)
Ramp-down rate 6°C/second max. 6°C/second max.
Time 25°C to peak temperature t 8 minutes max. 6 minutes max.

Note: Tolerance for peak profile temperature (Tp) is defined as a supplier minimum and a user maximum.

The MEMS microphones can be handled using industry standard pick and place equipment. Care should be
taken to avoid damage to the microphone structure as follows:
• Do not pick the microphone with vacuum tools which make contact with the microphone acoustic port
hole.
• The microphone acoustic port hole should not be exposed to vacuum. This can destroy or damage the
MEMS.
• Do not blow air into the microphone acoustic port hole. If an air blow cleaning process is used, the port
hole must be sealed to prevent particle contamination.
• It is recommended to perform the PCB assembly in a clean room environment in order to avoid
microphone contamination.
• Air blow and ultrasonic cleaning procedures shall not be applied to MEMS Microphones. A no-clean paste
is recommended for the assembly to avoid subsequent cleaning steps. The microphone MEMS can be
severely damaged by cleaning substances.
• To prevent the blocking or partial blocking of the sound port during PCB assembly, it is recommended to
cover the sound port with protective tape during PCB sawing or system assembly.
• Do not use excessive force to place the microphone on the PCB. The use of industry standard pick and place
tools is recommended in order to limit the mechanical force exerted on the package.

Note: For further information please consult the "General recommendation for assembly of Infineon
packages" document, which is available on the Infineon Technologies web page.

6.4 Packing
For shipping and assembly the Infineon microphones are packed in product specific tape-and-reel carriers. A
detailed drawing of the carrier can be seen in the figure below.

Datasheet 17 Rev 1.00


18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone

6 Package information

Figure 10 Tape dimensions


More information can be found on the Infineon website:
https://www.infineon.com/cms/en/product/packages/PG-LLGA/PG-LLGA-5-4/

Datasheet 18 Rev 1.00


18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone

7 Reliability specifications

7 Reliability specifications
The microphone sensitivity after stress and over temperature does not deviate by no more than +/- 3dB from
the initial value.

Table 9 Qualification tests according to AEC-Q103-003


Test Stress condition Standard
Temperature humidity bias TA = +85°C, R.H. = 85%, VDD = 3.6V, AEC Q100 Rev.H.
cyclical bias, 1000 hours
Temperature humidity storage TA = +85°C, R.H = 85%, 1000 hours AEC Q100 Rev.H.
Temperature cycling TA = -55°C ... +125°C, 30 min cycle time, AEC Q100 Rev.H.
1000cycles
High temperature storage life TA = +125°C, 1000 hours AEC Q100 Rev.H.
High temperature operating life TA = +125°C, VDD = 3.6V, 1000 hours AEC Q100 Rev.H.
Early life failure rate TA = +125°C, VDD = 2.5V, 48 hours JESD22-A108
Read out after stress at room temperature
Wire bond shear Bump shear test AEC Q100-001
Wire bond pull - MIL-STD883 Method 2011
Solderability - JESD22-B102
Physical dimensions - JESD22-B100 and B108
Solder ball shear - AEC Q103-003
Mechanical shock 3 pulses, 0.5msec duration, 10,000g peak JESD22-B104
acceleration in x,y and z planes
Variable frequency vibration 20Hz to 2kHz to 20Hz (logarithmic variation) in JESD22-B103
12 minutes, 4x in each orientation, 20g peak
acceleration
Package drop 10x on each of 6 axes (60 drops total) from a AEC Q100 Rev.H.
high of 1.2m onto a concrete surface
Die shear - MIL-STD-883 Method 2019
Humidity and temperature cycle 5 cycles (24h/cycle) IEC 60068-2-38
Low temperature operating life TA = -40°C, VDD = 3.6V, 1000 hours JESD22-A108
Low temperature storage TA = -40°C, 1000 hours JESD22-A119
Endurance life test 96 hours at 130dB continuous signal AEC Q103-003
Electrostatic discharge, all pins, UESD = ±2000V EIA/JESD22/A114
Human body model (HBM)
Electrostatic discharge, all pins, U = ±500V ESD STM 5.3.1
Charged device model (CDM)
Electrostatic discharge, 3 contact discharges of ±6kV to lid while IEC-61000-4-2
SLT - Contact discharge Vdd and fCLK are supplied according to the
operational modes; Vdd and fCLK ground is
separated from earth ground
(table continues...)

Datasheet 19 Rev 1.00


18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone

7 Reliability specifications

Table 9 (continued) Qualification tests according to AEC-Q103-003


Test Stress condition Standard
Electrostatic discharge, 3 air discharges of ±8kV to lid while Vdd and IEC-61000-4-2
SLT - Air discharge fCLK are supplied according to the operational
modes; Vdd and fCLK ground is separated from
earth ground
Latch-up TA = 105°C, I = ±200mA AEC Q100 Rev.H.
Electromagnetic compatibility IC strip line radiated emmissions IEC 61967-8 / Generic IC
(EMC) EMC Test Specification 2.1

Datasheet 20 Rev 1.00


18-05-2021
IM67D130A
AEC-Q103 qualified high performance digital XENSIV™ MEMS microphone

8 Revision history

8 Revision history
Table 10 Revision history
Document Date of release Description of changes
version
1.00 18.05.2021 • First released version

Datasheet 21 Rev 1.00


18-05-2021
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