IKP20N60T

TrenchStop® Series IKW20N60T

Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
C
 Very low VCE(sat) 1.5 V (typ.)
 Maximum Junction Temperature 175 °C
 Short circuit withstand time – 5s G
 Designed for : E
- Frequency Converters
- Uninterrupted Power Supply

®
TrenchStop and Fieldstop technology for 600 V applications
offers :
PG-TO-247-3
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
 Positive temperature coefficient in VCE(sat) PG-TO-220-3-1

 Low EMI
 Low Gate Charge
 Very soft, fast recovery anti-parallel Emitter Controlled HE diode

1
Qualified according to JEDEC for target applications
 Pb-free lead plating; RoHS compliant
 Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Package

IKP20N60T 600V 20A 1.5V 175C K20T60 PG-TO-220-3-1
IKW20N60T 600V 20A 1.5V 175C K20T60 PG-TO-247-3
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 600 V
DC collector current, limited by Tjmax IC A
TC = 25C 40
TC = 100C 20
Pulsed collector current, tp limited by Tjmax ICpul s 60
Turn off safe operating area (VCE  600V, Tj  175C) - 60
Diode forward current, limited by Tjmax TC = 25C IF 40
TC = 100C 20
Diode pulsed current, tp limited by Tjmax IFpul s 60
Gate-emitter voltage VGE 20 V
2)
Short circuit withstand time tSC 5 s
VGE = 15V, VCC  400V, Tj  150C
Power dissipation TC = 25C Ptot 166 W
Operating junction temperature Tj -40...+175 C
Storage temperature Tstg -55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260

1
J-STD-020 and JESD-022
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.

IFAG IPC TD VLS 1 Rev. 2.6 12.06.2013

 IKP20N60T
TrenchStop® Series IKW20N60T
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance, RthJC 0.9 K/W
junction – case
Diode thermal resistance, RthJCD 1.5
junction – case
Thermal resistance, RthJA 62
junction – ambient 40

Electrical Characteristic, at Tj = 25 C, unless otherwise specified

Value
Parameter Symbol Conditions Unit
min. Typ. max.
Static Characteristic
Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 0 .2m A 600 - - V
Collector-emitter saturation voltage VCE(sat) V G E = 15 V , I C = 20 A
T j =2 5 C - 1.5 2.05
T j =1 7 5 C - 1.9 -
Diode forward voltage VF V G E = 0V , I F = 2 0 A
T j =2 5 C - 1.65 2.05
T j =1 7 5 C - 1.6 -
Gate-emitter threshold voltage VGE(th) I C = 29 0µ A , V C E = V G E 4.1 4.9 5.7
Zero gate voltage collector current ICES V C E = 60 0 V , µA
V G E = 0V
T j =2 5 C - - 40
T j =1 7 5 C - - 1000
Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 100 nA
Transconductance gfs V C E = 20 V , I C = 20 A - 11 - S
Integrated gate resistor RGint - Ω

Dynamic Characteristic
Input capacitance Ciss V C E = 25 V , - 1100 - pF
Output capacitance Coss V G E = 0V , - 71 -
Reverse transfer capacitance Crss f= 1 MH z - 32 -
Gate charge QGate V C C = 48 0 V, I C =2 0 A - 120 - nC
V G E = 15 V
Internal emitter inductance LE T O - 24 7- 3- 2 1 - 13 - nH
measured 5mm (0.197 in.) from case T O - 22 0- 3- 1 7
1)
Short circuit collector current IC(SC) V G E = 15 V ,t S C  5 s - 183.3 - A
V C C = 4 0 0 V,
T j  150C

1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2)
Leakage inductance L  a nd Stray capacity C  due to dynamic test circuit in Figure E.

IFAG IPC TD VLS 2 Rev. 2.6 12.06.2013

 IKP20N60T
TrenchStop® Series IKW20N60T
Switching Characteristic, Inductive Load, at Tj=25 C
Value
Parameter Symbol Conditions Unit
min. Typ. max.
IGBT Characteristic
Turn-on delay time td(on) T j =2 5 C , - 18 - ns
Rise time tr V C C = 40 0 V, I C = 2 0 A, - 14 -
V G E = 0/ 15 V ,
Turn-off delay time td(off) R G = 12  , - 199 -
2)
Fall time tf L  =1 3 1n H, - 42 -
2)
Turn-on energy Eon C  = 3 1p F - 0.31 - mJ
Energy losses include
Turn-off energy Eoff “tail” and diode - 0.46 -
Total switching energy Ets reverse recovery. - 0.77 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time trr T j =2 5 C , - 41 - ns
Diode reverse recovery charge Qrr V R = 4 00 V , I F = 2 0 A, - 0.31 - µC
Diode peak reverse recovery current Irrm d i F / d t =8 8 0 A/ s - 13.3 - A
Diode peak rate of fall of reverse d i r r /d t - 711 - A/s
recovery current during t b

Switching Characteristic, Inductive Load, at Tj=175 C

Value
Parameter Symbol Conditions Unit
min. Typ. max.
IGBT Characteristic
Turn-on delay time td(on) T j =1 7 5 C, - 18 - ns
Rise time tr V C C = 40 0 V, I C = 2 0 A, - 18 -
V G E = 0/ 15 V ,
Turn-off delay time td(off) RG= 12  - 223 -
1)
Fall time tf L  =1 3 1n H, - 76 -
1)
Turn-on energy Eon C  = 3 1p F - 0.51 - mJ
Energy losses include
Turn-off energy Eoff “tail” and diode - 0.64 -
Total switching energy Ets reverse recovery. - 1.15 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time trr T j =1 7 5 C - 176 - ns
Diode reverse recovery charge Qrr V R = 4 00 V , I F = 2 0 A, - 1.46 - µC
Diode peak reverse recovery current Irrm d i F / d t =8 8 0 A/ s - 18.9 - A
Diode peak rate of fall of reverse d i r r /d t - 467 - A/s
recovery current during t b

1)
Leakage inductance L  a nd Stray capacity C  due to dynamic test circuit in Figure E.

IFAG IPC TD VLS 3 Rev. 2.6 12.06.2013

 IKP20N60T
TrenchStop® Series IKW20N60T
tp =2µs
60A
10µs

50A 10A
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

T C =80°C
40A 50µs

T C =110°C
30A

1A
20A 1ms
Ic
10ms
DC
10A
Ic

0A
0.1A
10H z 100H z 1kHz 10kHz 100kHz
1V 10V 100V 1000V

f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function of Figure 2. Safe operating area
switching frequency (D = 0, TC = 25C, Tj 175C;
(Tj  175C, D = 0.5, VCE = 400V, VGE=15V)
VGE = 0/+15V, RG = 12)

160W

30A
140W
Ptot, POWER DISSIPATION

IC, COLLECTOR CURRENT

120W 25A

100W 20A

80W
15A

60W
10A
40W
5A
20W

0W
0A
25°C 50°C 75°C 100°C 125°C 150°C 25°C 75°C 125°C

TC, CASE TEMPERATURE TC, CASE TEMPERATURE

Figure 3. Power dissipation as a function of Figure 4. Collector current as a function of
case temperature case temperature
(Tj  175C) (VGE  15V, Tj  175C)

IFAG IPC TD VLS 4 Rev. 2.6 12.06.2013

 IKP20N60T
TrenchStop® Series IKW20N60T

50A 50A
V GE =20V
V G E =20V
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

40A 40A 15V
15V
13V
13V
30A 30A 11V
11V
9V 9V

20A 20A 7V
7V

10A 10A

0A 0A
0V 1V 2V 3V 0V 1V 2V 3V 4V

VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic Figure 6. Typical output characteristic
(Tj = 25°C) (Tj = 175°C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE

35A
2.5V IC =40A
30A
IC, COLLECTOR CURRENT

2.0V
25A

20A 1.5V IC =20A

15A IC =10A
1.0V

10A
T J = 1 7 5 °C
0.5V
5A 2 5 °C

0A 0.0V
0V 2V 4V 6V 8V 0°C 50°C 100°C 150°C

VGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristic Figure 8. Typical collector-emitter
(VCE=10V) saturation voltage as a function of
junction temperature
(VGE = 15V)

IFAG IPC TD VLS 5 Rev. 2.6 12.06.2013

 IKP20N60T
TrenchStop® Series IKW20N60T

t d(off)
t d(off)

100ns
t, SWITCHING TIMES

t, SWITCHING TIMES
tf

t d(on) 100ns tf

10ns

t d(on)

tr

tr
1ns 10ns
0A 5A 10A 15A 20A 25A 30A 35A       

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 9. Typical switching times as a Figure 10. Typical switching times as a
function of collector current function of gate resistor
(inductive load, TJ=175°C, (inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, RG = 12Ω, VCE= 400V, VGE = 0/15V, IC = 20A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

7V

6V
VGE(th), GATE-EMITT TRSHOLD VOLTAGE

t d(off) m ax.
typ.
5V
t, SWITCHING TIMES

100n s

4V m in.
tf
3V

2V
t d(on )

1V
tr
10 ns 0V
25°C 50 °C 75°C 100°C 12 5°C 150°C -50°C 0°C 50°C 100°C 150°C

TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a Figure 12. Gate-emitter threshold voltage as
function of junction temperature a function of junction temperature
(inductive load, VCE = 400V, (IC = 0.29mA)
VGE = 0/15V, IC = 20A, RG=12Ω,
Dynamic test circuit in Figure E)

IFAG IPC TD VLS 6 Rev. 2.6 12.06.2013

 IKP20N60T
TrenchStop® Series IKW20N60T
*) Eon and Ets include losses *) E on a nd E ts in clu d e lo ss e s
2.4mJ Ets* 2 .4m J
due to diode recovery
d u e to d io d e rec o v e ry
E ts *
E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

2.0mJ 2 .0m J

1.6mJ 1 .6m J
E off

1.2mJ 1 .2m J

Eoff
0.8mJ 0 .8m J

0.4mJ 0 .4m J E on *
Eon*
0.0mJ 0 .0m J
0A 5A 10A 15A 20A 25A 30A 35A     

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 13. Typical switching energy losses Figure 14. Typical switching energy losses
as a function of collector current as a function of gate resistor
(inductive load, TJ = 175°C, (inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, RG = 12Ω, VCE = 400V, VGE = 0/15V, IC = 20A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

*) Eon and Ets include losses 2.0m J

due to diode recovery *) E on and E ts include losses
Ets* 1.8m J
1.0mJ due to diode recovery
E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

1.6m J

0.8mJ 1.4m J

1.2m J

0.6mJ 1.0m J E ts *
Eoff
0.8m J E off
0.4mJ
0.6m J
Eon* 0.4m J
0.2mJ E on *

0.2m J

0.0mJ 0.0m J
25°C 50°C 75°C 100°C 125°C 150°C 300V 350V 400V 450V 500V 550V

TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 15. Typical switching energy losses Figure 16. Typical switching energy losses
as a function of junction as a function of collector emitter
temperature voltage
(inductive load, VCE = 400V, (inductive load, TJ = 175°C,
VGE = 0/15V, IC = 20A, RG = 12Ω, VGE = 0/15V, IC = 20A, RG = 12Ω,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

IFAG IPC TD VLS 7 Rev. 2.6 12.06.2013

 IKP20N60T
TrenchStop® Series IKW20N60T

1nF
C iss
VGE, GATE-EMITTER VOLTAGE

15V

c, CAPACITANCE
120V
480V
10V
100pF
C oss

5V C rss

0V 10pF
0nC 30nC 60nC 90nC 120nC 0V 10V 20V 30V 40V

QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge Figure 18. Typical capacitance as a function
(IC=20 A) of collector-emitter voltage
(VGE=0V, f = 1 MHz)

12µs
IC(sc), short circuit COLLECTOR CURRENT

300A
tSC, SHORT CIRCUIT WITHSTAND TIME

10µs
250A
8µs
200A
6µs
150A
4µs
100A

2µs
50A

0µs
0A 10V 11V 12V 13V 14V
12V 14V 16V 18V

VGE, GATE-EMITTETR VOLTAGE VGE, GATE-EMITETR VOLTAGE

Figure 19. Typical short circuit collector Figure 20. Short circuit withstand time as a
current as a function of gate- function of gate-emitter voltage
emitter voltage (VCE=600V, start at TJ=25°C,
(VCE  400V, Tj  150C) TJmax<150°C)

IFAG IPC TD VLS 8 Rev. 2.6 12.06.2013

 IKP20N60T
TrenchStop® Series IKW20N60T

D=0.5 0
10 K/W D=0.5
ZthJC, TRANSIENT THERMAL RESISTANCE

ZthJC, TRANSIENT THERMAL RESISTANCE

0.2
0.2
R,(K/W) , (s)
-1 0.1 0.13483 9.207*10-2 6.53*10
10 K/W
R,(K/W) , (s) 0.1 0.58146 1.821*10-2
0.05 0.18715 6.925*10-2 0.44456 1.47*10-3
0.31990 1.085*10-2 -1
0.33997 1.254*10-4
0.30709 6.791*10-4 10 K/W R1 R2
0.05
0.07041 9.59*10-5
0.02 R1 R2
0.02
C 1 =  1 /R 1 C 2 =  2 /R 2
-2 0.01 0.01
10 K/W
C 1 =  1 /R 1 C 2 =  2 /R 2 single pulse
single pulse

-2
10 K/W
1µs 10µs 100µs 1ms 10ms 100ms 1µs 10µs 100µs 1ms 10ms 100ms
tP, PULSE WIDTH tP, PULSE WIDTH
Figure 21. IGBT transient thermal resistance Figure 22. Diode transient thermal
(D = tp / T) impedance as a function of pulse
width
(D=tP/T)

1.8µC

1.6µC T J =175°C
250ns
Qrr, REVERSE RECOVERY CHARGE

1.4µC
trr, REVERSE RECOVERY TIME

200ns 1.2µC

1.0µC
150ns TJ=175°C
0.8µC T J=25°C

100ns
0.6µC

0.4µC
50ns
TJ=25°C
0.2µC

0ns 600A/µs 900A/µs 1200A/µs

600A/µs 900A/µs 1200A/µs
diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as Figure 24. Typical reverse recovery charge
a function of diode current slope as a function of diode current
(VR=400V, IF=20A, slope
Dynamic test circuit in Figure E) (VR = 400V, IF = 20A,
Dynamic test circuit in Figure E)

IFAG IPC TD VLS 9 Rev. 2.6 12.06.2013

 IKP20N60T
TrenchStop® Series IKW20N60T

T J =175°C
24A -750A/µs T J=25°C
Irr, REVERSE RECOVERY CURRENT

OF REVERSE RECOVERY CURRENT

dirr/dt, DIODE PEAK RATE OF FALL
20A
-600A/µs

16A
T J =25°C -450A/µs

12A T J=175°C

-300A/µs
8A

-150A/µs
4A

0A 0A/µs
600A/µs 900A/µs 1200A/µs 600A/µs 900A/µs 1200A/µs

diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE

Figure 25. Typical reverse recovery current Figure 26. Typical diode peak rate of fall of
as a function of diode current reverse recovery current as a
slope function of diode current slope
(VR = 400V, IF = 20A, (VR=400V, IF=20A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

50A T J =25°C I F =40A

2.0V
175°C
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT

40A
1.5V 20A

30A
10A
1.0V
20A

0.5V
10A

0A 0.0V
0V 1V 2V 0°C 50°C 100°C 150°C

VF, FORWARD VOLTAGE TJ, JUNCTION TEMPERATURE

Figure 27. Typical diode forward current as Figure 28. Typical diode forward voltage as a
a function of forward voltage function of junction temperature

IFAG IPC TD VLS 10 Rev. 2.6 12.06.2013

 IKP20N60T
TrenchStop® Series IKW20N60T
PG-TO-220-3

IFAG IPC TD VLS 11 Rev. 2.6 12.06.2013

 IKP20N60T
TrenchStop® Series IKW20N60T

IFAG IPC TD VLS 12 Rev. 2.6 12.06.2013

 IKP20N60T
TrenchStop® Series IKW20N60T
i,v

diF /dt tr r =tS +tF

Qr r =QS +QF

tr r
IF tS tF

QS 10% Ir r m t
QF
Ir r m
dir r /dt VR
90% Ir r m

Figure C. Definition of diodes

switching characteristics

1 2 n
r1 r2 rn
Tj (t)

p(t)
r1 r2 rn

Figure A. Definition of switching times

TC

Figure D. Thermal equivalent

circuit

Figure B. Definition of switching losses Figure E. Dynamic test circuit

IFAG IPC TD VLS 13 Rev. 2.6 12.06.2013

 IKP20N60T
TrenchStop® Series IKW20N60T
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.

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The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.

Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable
to assume that the health of the user or other persons may be endangered.

IFAG IPC TD VLS 14 Rev. 2.6 12.06.2013