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    Lec-6 Deposition

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    ljs90036
    The document discusses deposition processes used in semiconductor manufacturing. It describes physical vapor deposition (PVD) methods like evaporation and sputtering used to deposit metals. It also describes chemical vapor deposition (CVD) methods like atmospheric pressure CVD and low pressure CVD used to deposit dielectrics like silicon dioxide. The document provides details on the deposition equipment, processes, film characteristics and factors for better film growth.

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    © All Rights Reserved
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    Lec-6 Deposition

    Uploaded by

    ljs90036
    6 views16 pages
    The document discusses deposition processes used in semiconductor manufacturing. It describes physical vapor deposition (PVD) methods like evaporation and sputtering used to deposit metals. It also describes chemical vapor deposition (CVD) methods like atmospheric pressure CVD and low pressure CVD used to deposit dielectrics like silicon dioxide. The document provides details on the deposition equipment, processes, film characteristics and factors for better film growth.

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    The document discusses deposition processes used in semiconductor manufacturing. It describes physical vapor deposition (PVD) methods like evaporation and sputtering used to deposit metals. It also describes chemical vapor deposition (CVD) methods like atmospheric pressure CVD and low pressure CVD used to deposit dielectrics like silicon dioxide. The document provides details on the deposition equipment, processes, film characteristics and factors for better film growth.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    6 views16 pages

    Lec-6 Deposition

    Uploaded by

    ljs90036
    The document discusses deposition processes used in semiconductor manufacturing. It describes physical vapor deposition (PVD) methods like evaporation and sputtering used to deposit metals. It also describes chemical vapor deposition (CVD) methods like atmospheric pressure CVD and low pressure CVD used to deposit dielectrics like silicon dioxide. The document provides details on the deposition equipment, processes, film characteristics and factors for better film growth.

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    © All Rights Reserved
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    of 16

    EEE-4131: DEPOSITION Lecture-06

    ©ADNAN AMIN SIDDIQUEE 1


    CONTENTS
    01 What is Deposition?

    02 Purpose of Deposition

    03 PVD Process

    04 Metal Interconnection

    05 CVD Process

    06 Features for Better Deposition Process

    2
    ©ADNAN AMIN SIDDIQUEE 2
    What is Deposition?

    Transfers a layer of materials on the surface of a wafer from a source by maintaining uniform thickness.
    The deposited layer on the film is called film.
    The films are either metals, metal-silicide, and dielectrics like SiO2.
    Purpose of deposition
    ▪ Insulation
    ▪ Protective cover
    ▪ Mask/Pattern design
    ▪ Self-aligned gate design
    ▪ Ohmic contacts
    ▪ Device Interconnection
    ©ADNAN AMIN SIDDIQUEE 3
    Deposition Methods
    Deposition

    Physical Deposition Chemical Deposition


    (metallization/PVD) (CVD)

    Atmospheric Plasma-Enhanced
    Low Pressure CVD
    Vacuum Evaporation Sputtering Pressure CVD CVD
    (LPCVD)
    (APCVD) (PECVD)

    • PVD=Physical vapor deposition


    • CVD=Chemical vapor deposition

    ©ADNAN AMIN SIDDIQUEE 4


    PVD (Evaporation)
    The source material is heated in a high vacuum chamber until it reaches
    the evaporation temperature.
    The vaporized source material is transported to the target substrate.
    The substrate surface is at much lower temperatures, the vaporized source
    molecules will transfer their energy to the substrate, lower their
    temperature and condense.
    The deposition rate depends on the evaporation rate, the angle, and the
    distance between the source and the substrate.
    Suitable for deposition of metallic thin films.
    Compounds, alloys, and polysilicon don’t deposit well.
    Step coverage is not very good because the vapor flows ballistically.
    E-beam guns can be used instead of resistive heating to improve the
    Vacuum Evaporation System growth rate.

    ©ADNAN AMIN SIDDIQUEE 5


    PVD (Sputtering)
    (-)Cathode The process is carried out in a vacuum chamber.
    Noble gas such as Argon is used as a sputtering gas.
    Ar+ RF power is used to create plasma from the sputtering gas.
    6
    Low-pressure Ar+ ion is generated in a glow discharge (plasma).
    The target is clamped on the cathode and the substrate is on the anode.
    Ar+ ions bombard the target and cause the transport of sputtered atoms
    on the substrate.

    Anode(+)
    Sputtering rate can be enhanced by using DC bias/magnetic field.
    Sputtered atoms condense on the substrate.
    Better film quality and step coverage than evaporation.
    Sputtering System The substrate may damage due to bombardment.

    ©ADNAN AMIN SIDDIQUEE


    Metal Interconnection

    Multilevel Interconnect Structure


    ©ADNAN AMIN SIDDIQUEE 7
    Metal Interconnection

    ©ADNAN AMIN SIDDIQUEE 8


    Metal Interconnection ( Film Characteristics )
    Film material should be good for contact formation and easy to deposit.
    Should have proper adhesion.
    Should not contaminate the wafer.
    No reaction with other metals and wafer.
    Soft and ductile so easily etching possible for pattern generation.
    Stable in the oxidizing process.
    Stable throughout all processes.
    Mechanical stability.
    Multilevel Structure
    Surface smoothness. Negative Side
    Low resistivity and high current density. Easy reaction with acid/base.
    Easily connected to external terminals. Easy scratch by handling.
    Long lifetime. Cu has less resistivity than Al.

    ©ADNAN AMIN SIDDIQUEE 9


    Chemical Vapor Deposition (CVD)
    Reactant gases are pumped into a reaction chamber.
    Activate gas by heat or plasma pressure.
    Gas absorption by the substrate surface.
    The reaction takes place on the substrate and deposition occurs.
    Remove volatile by-products away from the substrate.
    Exhaust waste by the pump.
    A high growth rate is possible.
    Can grow epitaxial films (VPE).
    High-temperature process.
    The film may not be pure.

    ©ADNAN AMIN SIDDIQUEE 10


    Atmospheric Pressure CVD

    The cold wall system Conveyer belt system

    Cold wall system or conveyer belt with an in-situ clean system is used.
    High deposition rate than LPCVD.
    Film thickness is non-uniform and step coverage is poor.
    Used for thick oxide(field oxide) deposition.
    Chemical Reactions
    450o C
    𝑆𝑖𝐻4 + 02 𝑆𝑖𝑂2 + 2𝐻2
    650-750o C
    TEOS 𝑆𝑖 𝐶2𝐻50 4 + 1202 𝑆𝑖𝑂2 + 8𝐶𝑂2 + 10𝐻20 Silane Based
    450o C
    𝑆𝑖𝐻4 + 2𝑁20 𝑆𝑖𝑂2 + 2𝑁2 + 2𝐻2

    ©ADNAN AMIN SIDDIQUEE 11


    Low Pressure CVD

    The hot wall system

    Hot wall system is used.


    Lower deposition rate than APCVD.
    Better film uniformity and step coverage.
    Used for polysilicon deposition.
    Hazardous due to the use of highly concentrated gas(toxic, corrosive, flammable, oxidizing).
    Chemical Reactions
    575 - 650o C
    𝑆𝑖𝐻4 𝑆𝑖 + 2𝐻2 Pyrolyzing reaction
    Silane

    ©ADNAN AMIN SIDDIQUEE 12


    Features for Better Deposition Process
    Growth Habit
    ▪ High surface mobility and low nucleation is required for polycrystalline film growth(polysilicon).
    ▪ Low surface mobility and high nucleation rate for amorphous film growth (oxide and nitride films).

    Temperature Range
    ▪ Films are grown at low temperatures tend to be less dense, and have poorer structural properties than their high temperature counterparts.
    ▪ Heat treatment is used for to densify the less dense films

    Adhesion
    ▪ A clean Environment is required for good adhesion.
    ▪ Sometimes additional materials are used for a better “glue” process. (chromium and titanium)

    Mechanical Stress
    ▪ Stress in metal films affects reliability.
    ▪ Stress is measured as a change in the wafer bow before and after deposition.
    ▪ Less mechanical stress system is desired for better deposition.

    ©ADNAN AMIN SIDDIQUEE 13


    Features for Better Deposition Process
    Step Coverage
    ▪ In microfabrication conformal coverage of stepped surface is desired.
    ▪ The shadow of the side wall prevents the deposition on the wafer that’s in the shadow of the wafer.

    Electromigration
    ▪ Transport of mass due to high current density in metals.
    ▪ It causes damage like pilling up and void formation.

    14
    References
    VLSI Fabrication Principles by Sorab K Ghandhi.
    VLSI Technology by S. M. SZE.
    The Science and Engineering of Microelectronic Fabrication by Stephen A. Campbell.
    Silicon VLSI Technology by Plummer, Deal, and Griffin
    Introduction to Microelectronic Fabrication by Richard C. Jaeger

    ©ADNAN AMIN SIDDIQUEE 15


    Any
    QUESTIONS

    ©ADNAN AMIN SIDDIQUEE 16

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