IPDQ65R080CFD7

MOSFET
650VCoolMOSªCFD7SJPowerDevice PG-HDSOP-22

Thelatest650VCoolMOS™CFD7extendsthevoltageclassofferingof
theCFD7familyandisasuccessortothe650VCoolMOS™CFD2.
Resultingfromimprovedswitchingperformanceandexcellentthermal 22

behavior,650VCooMOS™CFD7offershighestefficiencyinresonant 12

switchingtopologies,suchasLLCandphase-shift-full-bridge(ZVS).As TAB

partofInfineon’sfastbodydiodeportfolio,thisnewproductseriesblends 1

alladvantagesofafastswitchingtechnologytogetherwithsuperiorhard 11

commutationrobustness.TheCoolMOS™CFD7technologymeets
highestefficiencyandreliabilitystandardsandfurthermoresupportshigh
powerdensitysolutions.

Features Drain
Pin 12-22, Tab
•Ultra-fastbodydiode
•650Vbreakdownvoltage
•Best-in-classRDS(on) Gate *1

•Reducedswitchinglosses Pin 1
Driver
•LowRDS(on)dependencyovertemperature Source
Power
Pin 2
Source
*1: Internal body diode Pin 3-11
Benefits
•Excellenthardcommutationruggedness
•Extrasafetymarginfordesignswithincreasedbusvoltage
•Enablingincreasedpowerdensitysolutions
•OutstandinglightloadefficiencyinindustrialSMPSapplications
•ImprovedfullloadefficiencyinindustrialSMPSapplications

Potentialapplications
Optimizedforphase-shiftfull-bridge(ZVS),LLCApplications–Server,
Telecom,EVCharging,Solar

Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications

Pleasenote:Thesourceandsensesourcepinsarenotexchangeable.
Theirexchangemightleadtomalfunction.Forparalleling4pinMOSFET
devicestheplacementofthegateresistorisgenerallyrecommendedtobe
ontheDriverSourceinsteadoftheGate.

Table1KeyPerformanceParameters
Parameter Value Unit
VDS @ Tj,max 700 V
RDS(on),max 80 mΩ
Qg,typ 50 nC
ID,pulse 107 A
Eoss @ 400V 7.8 µJ
Body diode diF/dt 1300 A/µs

Type/OrderingCode Package Marking RelatedLinks

IPDQ65R080CFD7 PG-HDSOP-22 65R080F7 see Appendix A

Final Data Sheet 1 Rev.2.0,2022-08-29

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IPDQ65R080CFD7

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Final Data Sheet 2 Rev.2.0,2022-08-29

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IPDQ65R080CFD7

1Maximumratings
atTj=25°C,unlessotherwisespecified

Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 36 TC=25°C
Continuous drain current1) ID A
- - 22 TC=100°C
Pulsed drain current2) ID,pulse - - 107 A TC=25°C
Avalanche energy, single pulse EAS - - 125 mJ ID=5.0A; VDD=50V; see table 10
Avalanche energy, repetitive EAR - - 0.63 mJ ID=5.0A; VDD=50V; see table 10
Avalanche current, single pulse IAS - - 5.0 A -
MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V
Gate source voltage (static) VGS -20 - 20 V static;
Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)
Power dissipation Ptot - - 223 W TC=25°C
Storage temperature Tstg -55 - 150 °C -
Operating junction temperature Tj -55 - 150 °C -
Mounting torque - - - n.a. Ncm -
Continuous diode forward current 1)
IS - - 36 A TC=25°C
Diode pulse current 2)
IS,pulse - - 107 A TC=25°C
VDS=0...400V,ISD<=12.5A,Tj=25°C
Reverse diode dv/dt3) dv/dt - - 70 V/ns
see table 8
VDS=0...400V,ISD<=12.5A,Tj=25°C
Maximum diode commutation speed diF/dt - - 1300 A/µs
see table 8
Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min

1)
Limited by Tj max.
2)
Pulse width tp limited by Tj,max
3)
Identical low side and high side switch with identical RG
Final Data Sheet 3 Rev.2.0,2022-08-29
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IPDQ65R080CFD7

2Thermalcharacteristics

Table3Thermalcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case RthJC - - 0.56 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm² (one
Thermal resistance, junction - ambient
RthJA - 45 55 °C/W layer, 70µm thickness) copper area.
for SMD version
Tap exposed to air. PCB is vertical
without air stream cooling.
Soldering temperature, wave- & reflow
Tsold - - 260 °C reflow MSL1
soldering allowed

Final Data Sheet 4 Rev.2.0,2022-08-29

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3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified

Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 650 - - V VGS=0V,ID=1mA
Gate threshold voltage V(GS)th 3.5 4 4.5 V VDS=VGS,ID=0.63mA
- - 1 VDS=650V,VGS=0V,Tj=25°C
Zero gate voltage drain current1) IDSS µA
- 10 39 VDS=650V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V
- 0.068 0.080 VGS=10V,ID=12.5A,Tj=25°C
Drain-source on-state resistance RDS(on) Ω
- 0.15 - VGS=10V,ID=12.5A,Tj=150°C
Gate resistance RG - 6 - Ω f=1MHz,opendrain

Table5Dynamiccharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance Ciss - 2513 - pF VGS=0V,VDS=400V,f=250kHz
Output capacitance Coss - 40 - pF VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energy
Co(er) - 97 - pF VGS=0V,VDS=0...400V
related2)
Effective output capacitance, time
Co(tr) - 1022 - pF ID=constant,VGS=0V,VDS=0...400V
related3)
VDD=400V,VGS=13V,ID=12.5A,
Turn-on delay time td(on) - 25 - ns
RG=5.3Ω;seetable9
VDD=400V,VGS=13V,ID=12.5A,
Rise time tr - 10 - ns
RG=5.3Ω;seetable9
VDD=400V,VGS=13V,ID=12.5A,
Turn-off delay time td(off) - 105 - ns
RG=5.3Ω;seetable9
VDD=400V,VGS=13V,ID=12.5A,
Fall time tf - 5 - ns
RG=5.3Ω;seetable9

Table6Gatechargecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge Qgs - 15 - nC VDD=400V,ID=12.5A,VGS=0to10V
Gate to drain charge Qgd - 15 - nC VDD=400V,ID=12.5A,VGS=0to10V
Gate charge total Qg - 50 - nC VDD=400V,ID=12.5A,VGS=0to10V
Gate plateau voltage Vplateau - 5.7 - V VDD=400V,ID=12.5A,VGS=0to10V

1)
Maximum specification is defined by calculated six sigma upper confidence bound
2)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
3)
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
Final Data Sheet 5 Rev.2.0,2022-08-29
 650VCoolMOSªCFD7SJPowerDevice
IPDQ65R080CFD7

Table7Reversediodecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode forward voltage VSD - 1.0 - V VGS=0V,IF=12.5A,Tj=25°C
VR=400V,IF=12.5A,diF/dt=100A/µs;
Reverse recovery time trr - 132 198 ns
see table 8
VR=400V,IF=12.5A,diF/dt=100A/µs;
Reverse recovery charge Qrr - 0.73 1.46 µC
see table 8
VR=400V,IF=12.5A,diF/dt=100A/µs;
Peak reverse recovery current Irrm - 9.8 - A
see table 8

Final Data Sheet 6 Rev.2.0,2022-08-29

 650VCoolMOSªCFD7SJPowerDevice
IPDQ65R080CFD7

4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation Diagram2:Safeoperatingarea
250 103

102
200
1 µs

101

150 10 µs
Ptot[W]

ID[A]
100
100 µs
100

10-1
1 ms

50 10 ms
10-2
DC

0 10-3
0 25 50 75 100 125 150 100 101 102 103
TC[°C] VDS[V]
Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
3
10 100

102

1 µs 0.5
1
10

10 µs
ZthJC[°C/W]

0.2
ID[A]

100 10-1
0.1
100 µs
0.05
10-1
0.02
1 ms 0.01

10 ms
10-2 single pulse
DC

10-3 10-2
100 101 102 103 10-5 10-4 10-3 10-2 10-1 100
VDS[V] tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp ZthJC=f(tP);parameter:D=tp/T

Final Data Sheet 7 Rev.2.0,2022-08-29

 650VCoolMOSªCFD7SJPowerDevice
IPDQ65R080CFD7

Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics
200 125
20 V
20 V

10 V
100 10 V
150 8V
8V

7V
75
ID[A]

ID[A]
100

50
7V

6V
50
25
5.5 V
6V
5V
5.5 V
4.5 V 5V 4.5 V
0 0
0 5 10 15 20 0 5 10 15 20
VDS[V] VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS

Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance
0.240 2.5

0.210 2.0
RDS(on)[normalized]

5.5 V 6V 6.5 V 7V
RDS(on)[Ω]

0.180 1.5

10 V

20 V
0.150 1.0

0.120 0.5
0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150
ID[A] Tj[°C]
RDS(on)=f(ID);Tj=125°C;parameter:VGS RDS(on)=f(Tj);ID=12.5A;VGS=10V

Final Data Sheet 8 Rev.2.0,2022-08-29

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Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge
200 12

25 °C

10 400 V

150 120 V

VGS[V]
ID[A]

100 150 °C 6

50

0 0
0 2 4 6 8 10 12 0 10 20 30 40 50 60
VGS[V] Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=12.5Apulsed;parameter:VDD

Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy
2
10 150

125

101 25 °C 100
EAS[mJ]
IF[A]

125 °C 75

100 50

25

10-1 0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 150
VSD[V] Tj[°C]
IF=f(VSD);parameter:Tj EAS=f(Tj);ID=5.0A;VDD=50V

Final Data Sheet 9 Rev.2.0,2022-08-29

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Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances
730 105

700 104

Ciss

670 103
VBR(DSS)[V]

C[pF]
640 102
Coss

610 101

Crss

580 100
-50 -25 0 25 50 75 100 125 150 0 100 200 300 400 500
Tj[°C] VDS[V]
VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=250kHz

Diagram15:Typ.Cossstoredenergy
10

6
Eoss[µJ]

0
0 100 200 300 400 500
VDS[V]
Eoss=f(VDS)

Final Data Sheet 10 Rev.2.0,2022-08-29

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5TestCircuits

Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform

Rg1

VDS

Rg 2

IF
Rg1 = Rg 2

Table9Switchingtimes(ss)
Switching times test circuit for inductive load Switching times waveform

VDS
90%

VDS
VGS 10%
VGS
td(on) tr td(off) tf

ton toff

Table10Unclampedinductiveload(ss)
Unclamped inductive load test circuit Unclamped inductive waveform

V(BR)DS

ID VDS

VDS VDS
ID

Final Data Sheet 11 Rev.2.0,2022-08-29

 650VCoolMOSªCFD7SJPowerDevice
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6PackageOutlines

DOCUMENT NO.
Z8B00184650
REVISION
MILLIMETERS 02
DIMENSIONS
MIN. MAX.
A 2.20 2.35 SCALE 5:1
A1 0.00 0.15 0 1 2 3 4 5mm
A2 0.89 1.10
b 0.50 0.70
c 0.46 0.58
D 15.30 15.50 EUROPEAN PROJECTION
D1 10.23 10.43
E 14.90 15.10
E1 11.91 12.11
e 1.14
N 22
H 20.86 21.06 ISSUE DATE
L 1.20 1.40 16.01.2018

Figure1OutlinePG-HDSOP-22,dimensionsinmm

Final Data Sheet 12 Rev.2.0,2022-08-29

 650VCoolMOSªCFD7SJPowerDevice
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7AppendixA

Table11RelatedLinks
• IFXCoolMOSCFD7650VWebpage:www.infineon.com

• IFXCoolMOSCFD7650Vapplicationnote:www.infineon.com

• IFXCoolMOSCFD7650Vsimulationmodel:www.infineon.com

• IFXDesigntools:www.infineon.com

Final Data Sheet 13 Rev.2.0,2022-08-29

 650VCoolMOSªCFD7SJPowerDevice
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RevisionHistory
IPDQ65R080CFD7

Revision:2022-08-29,Rev.2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2022-08-29 Release of final version

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Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
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failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

Final Data Sheet 14 Rev.2.0,2022-08-29

Mouser Electronics

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