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Assignment 1

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Anshita Saxena
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8 views

Assignment 1

Uploaded by

Anshita Saxena
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Assignment ho-l

Sues:0 Tke for wayd curret through a siliLon dibdo s lomA at roD
tember ature (27c) The comebondig forward valtage is o75 valts
Calculate the evexse Saturation curJeit To
yeverse
Qu A -h Junchon diode ha a temerature of 12s°c and a
Soctuxortion curret of 3oMA: At a temberoture ot (2s°c, frd the
foiard and xevexe
dgramic yesistae for ov2. Vat bias in the
direchon:

Ques fige shows the ciruit fox Series diode corntiguation Find
the vale of Ve and Tp.
S Ge

R=4k
VA
7=12V

Junction diode
Ques Ohat ls the maanitud of X Foy silicoh P-N
yoom temþerature and fox dc currert of ImA.
Calulate Vout and Io ftoy the faloing tigure.
Si
12 Vout
I ) 22 K
KSL
lbmA

ae diode Caxsies a currekt of | mA of 00m temperotur e


es :- A
cohen a forwad bias of olSV iS abalied. Estimate the
temberature
Yevexse Saturation Currert at toom
Find the votage VA of the uTent given in figue
VF VFz
Si
R=7K
y=isv
Salcton of asignment no

SO I:= I.ler
075/2x26x(s3
lox153 =T.[e2*2hxe,7
Io = 5.446 nA

Arss Toche= 3alA


T= 12s°c = 398° K
V=to-2 Volt
Vy= 398 313 mV
1|600
biased cond'rion!
(I) Dynamic yestanca in the forod
E = 2VT

lx34: 3x163
Assuming 2=1, E = 3ox|6bx0/34-3x(63
F= 336
11) Dghamic esi tanco in the sevexse 6iased Condition'y
343x163
Box|66xa343xi63
IoXe

Sy=383-5 kve

From fguse , it is caor that the bateg Vs is þushirg the


Cursent in the direction of diode aro. Hea, both the dicdag
Oxe in torard bias or are in ON' Stete
VF = 07V Ve, =03V
Apging kvL, Vs= Ve + VFt VR
12 =07+ o3+ Ve
Ve = 12-|=ll Volt

Yx\03
Ie = 2:75X JD°= 275 mA
I+Io
f= 26 mV at goom tembeature
I+Io = I Sine Io is negligible
V=2 for silicon
Y= 2x 26x163 S2
IXI63
2:2K2
Ant Fist, let w convert current soure
into voltage. Soure
V=I x2 2K2. =loX\6² x2-2x|o to)
2K0E 1
Vout

V= 22 volt
Rs = 2-2.K
AslgjingkvL
V-2-2 07-2xIp) =0
22-07=34 Io
Ip = 2+3- 626mA
34

Vout = IpR =6-24X |53x12. X|&3


=7SI2. Volt

n s n = , I=lmA, Ve =o1S vats

Ix153=Iofo1s/lxLxIs?
To = 24g49x|66A
Io = 248 49 UA
silicon diods, Ve, =VF=o:7 Volt
Sino, diodes are

S-(o7+o7)
VA =Vs- , -VF =
=IS-|4 136 valt
VA
I-VA. 13:6v 942.mA

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