NGTB40N60L2WG

IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss.

Features www.onsemi.com
• Extremely Efficient Trench with Field Stop Technology
• TJmax = 175°C
• Soft Fast Reverse Recovery Diode 40 A, 600 V
• Optimized for Low VCEsat VCEsat = 1.65 V
• 5 ms Short−Circuit Capability EOFF = 0.28 mJ
• This is a Pb−Free Device
C
Typical Applications
• Motor Drive Inverters
• Industrial Switching
• Welding G

ABSOLUTE MAXIMUM RATINGS E

Rating Symbol Value Unit
Collector−emitter voltage VCES 600 V

Collector current IC A
@ TC = 25°C 80
@ TC = 100°C 40
TO−247
Diode Forward Current IF A G CASE 340AL
@ TC = 25°C 80 C
@ TC = 100°C 40 E

Diode Pulsed Current IFM 160 A

TPULSE Limited by TJ Max
MARKING DIAGRAM
Pulsed collector current, Tpulse ICM 160 A
limited by TJmax

Short−circuit withstand time tSC 5 ms

VGE = 15 V, VCE = 400 V,
TJ ≤ +150°C
40N60L2
Gate−emitter voltage VGE $20 V AYWWG
V
Transient gate−emitter voltage $30
(TPULSE = 5 ms, D < 0.10)

Power Dissipation PD W
@ TC = 25°C 417
@ TC = 100°C 208
Operating junction temperature TJ −55 to +175 °C A = Assembly Location
range Y = Year
WW = Work Week
Storage temperature range Tstg −55 to +175 °C
G = Pb−Free Package
Lead temperature for soldering, 1/8” TSLD 260 °C
from case for 5 seconds
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be Device Package Shipping
assumed, damage may occur and reliability may be affected.
NGTB40N60L2WG TO−247 30 Units / Rail
(Pb−Free)

© Semiconductor Components Industries, LLC, 2016 1 Publication Order Number:

January, 2016 − Rev. 2 NGTB40N60L2W/D
 NGTB40N60L2WG

THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal resistance junction−to−case, for IGBT RqJC 0.36 °C/W

Thermal resistance junction−to−case, for Diode RqJC 1.00 °C/W

Thermal resistance junction−to−ambient RqJA 40 °C/W

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Test Conditions Symbol Min Typ Max Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage, VGE = 0 V, IC = 500 mA V(BR)CES 600 − − V
gate−emitter short−circuited
Collector−emitter saturation voltage VGE = 15 V, IC = 40 A VCEsat − 1.65 1.90 V
VGE = 15 V, IC = 40 A, TJ = 175°C − 1.90 −
Gate−emitter threshold voltage VGE = VCE, IC = 350 mA VGE(th) 4.5 5.8 6.5 V
Collector−emitter cut−off current, gate− VGE = 0 V, VCE = 600 V ICES − − 0.5 mA
emitter short−circuited VGE = 0 V, VCE = 600 V, TJ = 175°C − 5.0 −
Gate leakage current, collector−emitter VGE = 20 V , VCE = 0 V IGES − − 200 nA
short−circuited
DYNAMIC CHARACTERISTIC
Input capacitance Cies − 5286 − pF
Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Coes − 213 −
Reverse transfer capacitance Cres − 147 −
Gate charge total Qg − 228 − nC
Gate to emitter charge VCE = 480 V, IC = 40 A, VGE = 15 V Qge − 50 −
Gate to collector charge Qgc − 115 −
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time td(on) − 98 − ns
Rise time tr − 42 −
Turn−off delay time TJ = 25°C td(off) − 213 −
VCC = 400 V, IC = 40 A
Fall time tf − 60 −
Rg = 10 W
Turn−on switching loss VGE = 0 V/ 15 V Eon − 1.17 − mJ
Turn−off switching loss Eoff − 0.28 −
Total switching loss Ets − 1.45 −
Turn−on delay time td(on) − 98 − ns
Rise time tr − 44 −
Turn−off delay time TJ = 150°C td(off) − 220 −
VCC = 400 V, IC = 40 A
Fall time tf − 88 −
Rg = 10 W
Turn−on switching loss VGE = 0 V/ 15 V Eon − 1.45 − mJ
Turn−off switching loss Eoff − 0.68 −
Total switching loss Ets − 2.13 −
DIODE CHARACTERISTIC
Forward voltage VGE = 0 V, IF = 40 A VF − 2.40 3.00 V
VGE = 0 V, IF = 40 A, TJ = 175°C − 2.58 −
Reverse recovery time trr − 73 − ns
TJ = 25°C
Reverse recovery charge IF = 40 A, VR = 200 V Qrr − 282 − nC
Reverse recovery current diF/dt = 200 A/ms Irrm − 6.7 − A
Reverse recovery time trr − 160 − ns
TJ = 175°C
Reverse recovery charge IF = 40 A, VR = 200 V Qrr − 912 − nC
Reverse recovery current diF/dt = 200 A/ms Irrm − 8.6 − A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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TYPICAL CHARACTERISTICS

160 160
TJ = 25°C TJ = 150°C 15 V
IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

140 140
VGE = 20 to 15 V VGE = 20 to 17 V
120 13 V 120

100 100 13 V

80 80
11 V
60 60 11 V

40 10 V 40 10 V
7V 9V
20 7V 9V 20
8V
8V
0 0
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics Figure 2. Output Characteristics

160 160
TJ = −55°C
VGE = 20 to
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)

140 15 V 13 V 140
TJ = 25°C
120 120

100 100

80 80
TJ = 150°C
11 V
60 60

40 10 V 40

20 7V−8V 20
9V
0 0
0 1 2 3 4 5 6 7 8 0 2 4 6 8 10 12 14 16
VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics
VCE, COLLECTOR−EMITTER VOLTAGE (V)

3.00 10,000
Cies
2.75
IC = 60 A
2.50
C, CAPACITANCE (pF)

2.25 1000
IC = 40 A
2.00
1.75 IC = 20 A
Coes
1.50 100
1.25 Cres
1.00
TJ = 25°C
0.75 10
−75 −50 −25 0 25 50 75 100 125 150 175 200 0 10 20 30 40 50 60 70 80 90 100
TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance

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TYPICAL CHARACTERISTICS

110 20

VGE, GATE−EMITTER VOLTAGE (V)

100 18
IF, FORWARD CURRENT (A)

90 16
80
14
70
12
60 TJ = 25°C
10
50
TJ = 150°C 8
40
30 6

20 4 VCE = 480 V
VGE = 15 V
10 2
IC = 40 A
0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 50 100 150 200 250
VF, FORWARD VOLTAGE (V) QG, GATE CHARGE (nC)
Figure 7. Diode Forward Characteristics Figure 8. Typical Gate Charge

1.75 1000
VCE = 400 V VCE = 400 V
1.5 VGE = 15 V VGE = 15 V
IC = 40 A IC = 40 A
SWITCHING LOSS (mJ)

SWITCHING TIME (ns)

Eon Rg = 10 W
1.25 Rg = 10 W
td(off)

1
100 td(on)
0.75 tf
Eoff tr
0.5

0.25

0 10
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature

4.5 1000
VCE = 400 V VCE = 400 V
4 VGE = 15 V VGE = 15 V
TJ = 150°C TJ = 150°C
SWITCHING LOSS (mJ)

3.5
SWITCHING TIME (ns)

Rg = 10 W td(off) Rg = 10 W
3
Eon tf
2.5 td(on)
100
2
1.5
Eoff
1 tr

0.5
0 10
5 15 25 35 45 55 65 75 85 5 15 25 35 45 55 65 75 85
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. IC

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TYPICAL CHARACTERISTICS

6 10000
5.5 VCE = 400 V
VGE = 15 V
5 Eon
TJ = 150°C
SWITCHING LOSS (mJ)

SWITCHING TIME (ns)

4.5 IC = 35 A td(off)
4 1000
3.5
td(on)
3
2.5
2 Eoff 100
tf VCE = 400 V
1.5
tr VGE = 15 V
1 TJ = 150°C
0.5 IC = 40 A
0 10
5 15 25 35 45 55 65 75 5 15 25 35 45 55 65 75 85
Rg, GATE RESISTOR (W) Rg, GATE RESISTOR (W)
Figure 13. Switching Loss vs. Rg Figure 14. Switching Time vs. Rg

2.5 1000
IC = 40 A IC = 40 A
VGE = 15 V VGE = 15 V
Eon
2 TJ = 150°C TJ = 150°C
SWITCHING LOSS (mJ)

SWITCHING TIME (ns)

Rg = 10 W Rg = 10 W td(off)

1.5
td(on)
100
tf
1 Eoff
tr

0.5

0 10
150 200 250 300 350 400 450 500 550 600 175 225 275 325 375 425 475 525 575
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE Figure 16. Switching Time vs. VCE

1000 1000
1 ms VGE = 15 V, TC = 125°C
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)

100 ms
100
50 ms 100
dc operation
10

Single Nonrepetitive 10
1 Pulse TC = 25°C
Curves must be derated
linearly with increase
0.1 in temperature
1
1 10 100 1000 1 10 100 1000
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area Figure 18. Reverse Bias Safe Operating Area

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TYPICAL CHARACTERISTICS

Qrr, REVERSE RECOVERY CHARGE (mC)

160 2.0
trr, REVERSE RECOVERY TIME (ns)

140
TJ = 175°C, IF = 40 A 1.5
TJ = 175°C, IF = 40 A
120

100 1.0

80
TJ = 25°C, IF = 40 A
TJ = 25°C, IF = 40 A 0.5
60

40 0
100 300 500 700 900 1100 100 300 500 700 900 1100
diF/dt, DIODE CURRENT SLOPE (A/ms) diF/dt, DIODE CURRENT SLOPE (A/ms)
Figure 19. trr vs. diF/dt Figure 20. Qrr vs. diF/dt
(VR = 400 V) (VR = 400 V)
Irm, REVERSE RECOVERY CURRENT (A)

30 3.5

IF = 60 A
VF, FORWARD VOLTAGE (V)

TJ = 175°C, IF = 40 A 3.0

20 IF = 40 A
2.5

IF = 30 A
2.0
10 TJ = 25°C, IF = 40 A

1.5

0 1.0
100 300 500 700 900 1100 −75 −50 −25 0 25 50 75 100 125 150 175 200
diF/dt, DIODE CURRENT SLOPE (A/ms) TJ, JUNCTION TEMPERATURE (°C)
Figure 21. Irm vs. diF/dt Figure 22. VF vs. TJ
(VR = 400 V)

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 NGTB40N60L2WG

TYPICAL CHARACTERISTICS

1
RqJA = 0.36
SQUARE−WAVE PEAK R(t) (°C/W)

50% Duty Cycle

0.1 20%
10%
5%
Junction R1 R2 Rn Case Ri (°C/W) Ci (J/°C)
0.01 2% 0.0424 0.0024
0.0269 0.0117
0.0344 0.0291
0.0858 0.0368
0.01 C1 C2 Cn 0.1370 0.0730
Single Pulse 0.0287 1.1036
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.0001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1
ON−PULSE WIDTH (sec)
Figure 23. IGBT Die Self−heating Square−wave Duty Cycle Transient Thermal Response

1
SQUARE−WAVE PEAK R(t) (°C/W)

50% Duty Cycle RqJA = 1.00

20%
Ri (°C/W) Ci (J/°C)
10% Junction R1 R2 Rn Case 0.015573 0.000064
0.1 0.020609 0.000485
5% 0.022302 0.001418
0.051471 0.001943
2% 0.093296 0.003390
C1 C2 Cn 0.196754 0.005082
0.133748 0.023644
Single Pulse Duty Factor = t1/t2 0.176718 0.056587
Peak TJ = PDM x ZqJC + TC 0.249274 0.126860
0.037835 2.643021
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1
ON−PULSE WIDTH (sec)
Figure 24. Diode Die Self−heating Square−wave Duty Cycle Transient Thermal Response

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PACKAGE DIMENSIONS

TO−247
CASE 340AL
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
SEATING 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
NOTE 4 A B PLANE
0.635 M B A M
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
E P NOTE 6 MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
A DIMENSIONS ARE MEASURED AT THE OUTERMOST
E2/2 EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
Q S L1.
E2 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
NOTE 4 TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
D 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
NOTE 3 BY L1.
4
MILLIMETERS
1 2 3 DIM MIN MAX
A 4.70 5.30
L1 A1 2.20 2.60
b 1.00 1.40
b2 1.65 2.35
L NOTE 5 b4 2.60 3.40
c 0.40 0.80
D 20.30 21.40
E 15.50 16.25
E2 4.32 5.49
2X b2 c e 5.45 BSC
L 19.80 20.80
b4 A1 L1 3.50 4.50
3X b NOTE 7 P 3.55 3.65
0.25 M B A M Q 5.40 6.20
e S 6.15 BSC

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