Microwaves and Radar
Microwaves and Radar
Microwaves and Radar
SYLLABUS
PART - A
UNIT - 1
MICROWAVE TRANSMISSION LINES: Introduction, transmission lines equations and
solutions, reflection and transmission coefficients, standing waves and SWR, line
impedance and line admittance. Smith chart, impedance matching using single stubs,
Microwave coaxial connectors.
7 Hours
UNIT - 2
MICROWAVE WAVEGUIDES AND COMPONENTS: Introduction, rectangular
waveguides, circular waveguides, microwave cavities, microwave hybrid circuits,
directional couplers, circulators and isolators.
7 Hours
UNIT - 3
MICROWAVE DIODES,
Transfer electron devices: Introduction, GUNN effect diodes – GaAs diode, RWH theory,
Modes of operation, Avalanche transit time devices: READ diode, IMPATT diode,
BARITT diode, Parametric amplifiers Other diodes: PIN diodes, Schottky barrier diodes.
7 Hours
UNIT - 4
Microwave network theory and passive devices. Symmetrical Z and Y parameters, for
reciprocal Networks, S matrix representation of multi port networks.
6 Hours
PART - B
UNIT - 5
Microwave passive devices, Coaxial connectors and adapters, Phase
shifters, Attenuators, Waveguide Tees, Magic tees.
4 Hours
UNIT - 6
STRIP LINES: Introduction, Microstrip lines, Parallel strip lines, Coplanar strip lines,
Shielded strip Lines.
6 Hours
UNIT - 7
AN INTRODUCTION TO RADAR: Basic Radar, The simple form of the Radar equation,
Radar block diagram, Radar frequencies, application of Radar, the origins of Radar.
8 Hours
UNIT - 8
MTI AND PULSE DOPPLER RADAR: Introduction to Doppler and MTI Radar, delay line
Cancellers, digital MTI processing, Moving target detector, pulse Doppler Radar.
7 Hours
TEXT BOOKS:
1. Microwave Devices and circuits- Liao / Pearson Education.
rd
2. Introduction to Radar systems-Merrill I Skolnik, 3 Ed, TMH, 2001.
3. Microwave Engineering – Annapurna Das, Sisir K Das TMH Publication,
2001.
REFERENCE BOOK:
1. Microwave Engineering – David M Pozar, John Wiley, 2e, 2004
Dept of ECE/ GCEM Page 2
Microwaves and Radar 10EC54
INDEX SHEET
5 to 22
UNIT – 1 MICROWAVE TRANSMISSION LINES
1 Introduction to transmission lines equations and solutions 6 to 10
2 Reflection and transmission coefficients 10 to 15
3 standing waves and SWR 15 to 17
4 line impedance and line admittance 17 to 19
5 Smith chart, impedance matching using single stubs 19 to 22
Recommended questions 23
24 to 58
UNIT - 2: MICROWAVE WAVEGUIDES AND COMPONENTS
1 Introduction rectangular waveguides 25 to 31
2 circular waveguides 32 to 41
3 microwave cavities, microwave hybrid circuits 42 to 50
4 directional couplers, 50 to 52
5 circulators and isolators 52 to 57
Recommended questions 58
UNIT – 3 MICROWAVE DIODES 58 to 90
1 Introduction, GUNN effect diodes – GaAs diode 59 to 63
2 RWH theory, Modes of operation 63 to 70
3 Avalanche transit time devices: READ diode 70 to 72
4 IMPATT diode, BARITT diode 72 to 78
5 Parametric amplifiers 78 to 83
6 Other diodes: PIN diodes, Schottky barrier diodes 83 to 89
Recommended questions 90
UNIT – 4 Microwave network theory and passive devices 91 to 104
1 Symmetrical Z and Y parameters for reciprocal Networks 92 to 94
2 S matrix representation of multi port networks 94 to 97
3 Properties of S-parameter 98 to 103
Recommended questions 104
159 to 190
UNIT – 8 MTI AND PULSE DOPPLER RADAR
1 Introduction to Doppler and MTI Radar 160 to 175
2 Delay line Cancellers 175 to 181
3 digital MTI processing 182 to 183
4 Moving target detector, 183 to 188
5 Pulse Doppler Radar 189
Recommended questions 190
UNIT – 1
7 Hours
TEXT BOOKS:
1.Microwave Devices and circuits- Liao / Pearson Education.
2.Microwave Engineering – Annapurna Das, Sisir K Das TMH Publication, 2001.
REFERENCE BOOK:
1. Microwave Engineering – David M Pozar, John Wiley, 2e, 2004
UNIT- 1
INTRODUCTION:
For sufficiently high frequencies the wavelength is comparable with the length of
conductors in a transmission line. The signal propagates as a wave of voltage
and current along the line, because it cannot change instantaneously at all
locations. Therefore, we cannot neglect the impedance properties of the wires.
Relation between instantaneous voltage v and current i at any point along the line:
The general solutions of the second-order, linear differential equation for V, I are :
–z direction.
The velocity with which a front of constant phase travels is called the
phase velocity u .
p
Therefore
In a coaxial cable,
εo – permittivity of vacuum
εr – relative permittivity (dielectric constant) of
dielectric μo – permeability of vacuum
v(z 0) vi (z 0) vr (z 0)
i(z 0) ii (z 0) ir (z 0)
1 [v ( z 0) v ( z 0)]
i r
Zo
v(z 0) Z vi (z 0) vr (z 0) Z
i o L
(z 0) vi (z 0) vr (z 0)
Standing wave ratio:
Dept of ECE/
GCEM Page 14
Microwaves and Radar 10EC54
S E 1 z max 1
E 1
1 z min
• In a standing wave, there are positions at the line where the amplitude of
the resultant voltage has maximum and minimum.
The voltage standing wave ratio (VSWR) is the ratio of the maximum and
minimum voltage magnitudes. The distance between two successive
maximums is equal to λ/2.
VSWR is useful to find the maximum voltage magnitude on the line due to
reflection from the load. If Vinc is the incident voltage on the load,
SMITH CHART:
It means the reflection coefficient has same magnitude but only a phase
shift of 2 β l if we move a length l along the line ( Γ rotates clockwise on the
Smith Chart when moving away from the load and anti-clockwise when
moving towards the load).
• The Smith Chart is a clever tool for analyzing transmission lines
• The outside of the chart shows location on the line in wavelengths
Toward
Generator
Constant Reflection
Coefficient Circle
Away From
Generator
• Now the line is matched to the left of the stub because the
normalized impedance and admittance are equal to 1
• Note that the point on the Smith Chart where the line is matched is in
the center (normalized z=1) where also the reflection coefficient
circle has zero radius or the reflection coefficient is zero.
• Thus, the goal with the matching problem is to add an impedance so
that the total impedance is the characteristic impedance.
PROBLEMS:
UNIT - 2
MICROWAVE WAVEGUIDES AND COMPONENTS: Introduction, rectangular
waveguides, circular waveguides, microwave cavities, microwave hybrid circuits,
directional couplers, circulators and isolators.
7 Hours
TEXT BOOKS:
1.Microwave Devices and circuits- Liao / Pearson Education.
REFERENCE BOOK:
1. Microwave Engineering – David M Pozar, John Wiley, 2e, 2004
UNIT- 2
MICROWAVE WAVEGUIDES AND COMPONENTS
INTRODUCITON
A waveguide consists of a hollow metallic tube of either rectangular or
circular cross section used to guide electromagnetic wave. Rectangular
waveguide is most commonly used as waveguide. waveguides are used at
frequencies in the microwave range.
At microwave frequencies ( above 1GHz to 100 GHz ) the losses in the two
line transmission system will be very high and hence it cannot be used at
those frequencies . hence microwave signals are propagated through the
waveguides in order to minimize the losses.
1. The conducting walls of the guide confine the electromagnetic fields and
thereby guide the electromagnetic wave through multiple reflections .
2. when the waves travel longitudinally down the guide, the plane
waves are reflected from wall to wall .the process results in a
component of either electric or magnetic fields in the direction of
propagation of the resultant wave.
3. TEM waves cannot propagate through the waveguide since it
requires an axial conductor for axial current flow .
4. when the wavelength inside the waveguide differs from that outside
the guide, the velocity of wave propagation inside the waveguide
must also be different from that through free space.
Dept of ECE/ GCEM Page 25
Microwaves and Radar 10EC54
Boundary conditions:
We assume the guides to be perfect conductors so = 0 inside the
guides. Hence, the continuity of Et at a boundary implies that Et = 0 in the
wave guide at the boundary.
Dept of ECE/ GCEM Page 26
Microwaves and Radar 10EC54
En is not necessarily zero in the wave guide at the boundary as there may
be surface charges on the conducting walls (the solution given below
implies that there are such charges)
It follows from Maxwell's equation that because = 0, is also zero inside the
conductor (the time dependence of is exp(-iTt)). The continuity of Hn
implies that Hn = 0 at the boundary.
There are currents induced in the guides but for perfect conductors these
can be only surface currents. Hence, there is no continuity for Ht. This is to
be contrasted with the boundary condition used for waves reflecting off
conducting surfaces with finite conductivity.
The standard geometry for a rectangular wave guide is given fig 1. A wave
can be guided by two parallel planes for which case we let the planes at x
= 0, a extend to y = ±4.
It is customary in wave guides to use the longitudinal field strength as the reference.
For the parallel plate wave guide there is no y dependence so just set Y
TE modes
Using the above form for the solution of the wave equation, the wave
equation can be rewritten as
the minus signs being chosen so that we get the oscillatory solutions
needed to fit the boundary conditions.
For the following Griffith's writes down all the Maxwell equations
specialized to propagation along 0z. I will write just those needed for the
specific task and motivate the choice.
which is not a solution to the wave equation ... try it. It also equivalent to
adding a solution with either m = 0 or n = 0 which is a solution with a different
Suppose a > b then the minimum frequency is cB/a and for a limited range
of T (dependent on a and b) this solution (m = 1, n = 0, or TE10) is the only
one possible.
Away from the boundaries
where Hzx means that cos k xx has been replaced by sin kxx.
We need another relation between Ey and either Hx or Hz, which must come
from the other Maxwell equation (ME1). We have to decide which component of
ME1 to use. If we choose the z component, the equation involves Ex and Ey,
introducing another unknown field (Ex). However, the x component involves Ey
and Ez. As Ez = 0, this gi ves the req uired rel ati on.
TM modes
The boundary conditions are easier to apply as it is Ez itself that is zero at the
boundaries.
Dept of ECE/ GCEM Page 31
Consequently, the solution is readily found to be
Rectangular Waveguide:
• Let us consider a rectangular waveguide with interior dimensions are a x b,
Rectangular Waveguide
Location of mode
f 1 m2 n
2
c
2
m n
2
ab
c
mn
2 a b 2 r r
u 1 1 1 1 c
o r o r o o r r r r
If we fix the wall separation at a, and change the frequency, we must then also
change the angle if we are to maintain a propagating wave. Figure (b) shows
The edge of a +Eo wave front (point A) will line up with the edge of a –Eo
front (point B), and the two fronts must be /2 apart for the m = 1 mode.
m 2 2a uu
sin a m sin f
The waveguide can support propagation as long as the wavelength is
smaller than a critical value, c, that occurs at = 90 , or
2a uu
c f
m c
Where fc is the cutoff frequency for the propagating mode.
We can relate the angle to the operating frequency and the cutoff frequency by
sin fc
f
c
The time tAC it takes for the wavefront to move from A to C (a distance lAC) is
l m 2
t AC
u u
AC Distance from A to C u u
Wavefront Velocity
A constant phase point moves along the wall from A to D. Calling this
phase velocity up, and given the distance lAD is
m 2
l
AD cos
Then the time tAD to travel from A to D is
t l
AD
AD m2
up cos up
p
cos
u 1 1 1 1 c
u
o r o r o o r r r r
The Phase velocity is given by
uu
up
cos
2 2 2
cos cos 1 sin 1 fc f
u 1 c
f
The guide wavelength is given by
u
2
1 fc
f
The ratio of the transverse electric field to the transverse magnetic field for
a propagating mode at a particular frequency is the waveguide impedance.
u
ZmTEn ,
fc 2
1
f
2
TM fc
Zmn u 1 .
f
(1) TM mode phase velocity always faster than the light speed in the
medium
(2) TM mode group velocity always slower than the light speed in the
medium
(3) Depends on frequency � dispersive transmission systems
(4) Propagation velocity (velocity of energy transport) = group
velocity.
Modes of propagation:
Using phasors & assuming waveguide filled with
lossless dielectric material and
walls of perfect conductor,
the wave inside should obey…
2 2 2
Ek E0
2
Hk H0
2 2
where k c
2 2
Then applying on the z-component Ez k Ez 0
2 2 2
E E z
E 2
2 z 0 2 2 z k Ez
x y z
Solving by method of Separation of Variables :
Ez (x, y, z) X (x)Y ( y)Z (z)
from where we obtain :
X '' Y '' Z '' 2
X Y Z k
X Y Z
2 2 2 2
k x k y k
which results in the expressions :
'' 2 '' 2
X kx X0Y ky Y0
'' 2
Z Z0
From Faraday and Ampere Laws we can find the remaining four components
E j
Ex z
2
Hz
2
h x h y
E
E y z j Hz
2 2
Dept of ECE/ GCEM h y h x Page 39
j E H
H x z z
Microwaves and Radar 10EC54
Modes of propagation:
From the above equations we can conclude:
TEM (Ez=Hz=0) can‟t propagate.
TE (Ez=0) transverse electric
In TE mode, the electric lines of flux are perpendicular to the
axis of the waveguide
TM (Hz=0) transverse magnetic, Ez exists
In TM mode, the magnetic lines of flux are perpendicular to
the axis of the waveguide.
HE hybrid modes in which all components exists.
TM Mode:
m n jz
Ez Eo sin x sin ye
a b
Hz 0
m mx ny
Ez E 2 E cos sin e z
Ex h2 x x h a o a b
Dept of ECE/ GCEM Page 40
Ez n mx n yz
E 2 E E sin cos e
y h y y h2 b o a b
Microwaves and Radar 10EC54
TM Cutoff:
2 2 2
kx ky k
2 2
m n 2
ab
The cutoff frequency occurs when
2
2 m n 2 then j 0
When c a b
2 2
1 1 m n
b
or f c
2 a
2
2 m n2
When and 0
a b
Propagation:
2
m n
When 2
2
j and 0
a b
Cutoff
The cutoff frequency is the frequency below which attenuation
occurs and above which propagation takes place. (High Pass)
f u' m
2
n
2
c mn
2 a b
The phase constant becomes
2 f 2
2 m n 2' c
1
a b f
Phase velocity and impedance
The phase velocity is defined as
2 up
up
' f
intrinsic impedance of the mode is
2
Ex Ey fc
TM '1
Hy Hx f
MICROWAVE HYBRID CIRCUITS:
Scattering matrix :
Let us consider a two port network which represents a number of parameter
All the above listed parameters can be represented as the ratio of either
voltage to current or current or voltage under certain conditions of input
or output ports.
An E-plane tee is a waveguide tee in which the axis of its side arm is
parallel to the E field of the main guide . if the collinear arms are symmetric
about the side arm.
If the E-plane tee is perfectly matched with the aid of screw tuners at the
junction , the diagonal components of the scattering matrix are zero
because there will be no reflection.
When the waves are fed into side arm, the waves appearing at port 1 and port
2 of the collinear arm will be in opposite phase and in same magnitude.
An H-plane tee is a waveguide tee in which the axis of its side arm is
shunting the E field or parallel to the H-field of the main guide.
If two input waves are fed into port 1 and port 2 of the collinear arm, the
output wave at port 3 will be in phase and additive .
Dept of ECE/ GCEM Page 46
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If the input is fed into port 3, the wave will split equally into port 1 and port
2 in phase and in same magnitude .
1. If two waves of equal magnitude and same phase are fed into port 1 and
port 2 the output will be zero at port 3 and additive at port 4.
The hybrid ring has characteristics similar to those of the hybrid tee. When a
I wave is fed into port 1, it will not appear at port 3 because the difference of
phase shifts for the waves traveling in the clockwise and counterclockwise
direction is 180°. Thus the waves are canceled at port 3. For the same
reason, the waves fed into port 2 will not emerge at port 4 and so on.
The S matrix for an ideal hybrid ring can be expressed as
frequency for an ideal hybrid ring. In actual hybrid rings there are small leakage
couplings and therefore the zero elements in the matrix are not equal to zero.
length L is an odd number of quarter wavelengths, the reflected waves from both
ends of the waveguide section are completely canceled. For the waveguide bend,
DIRECTIONAL COUPLERS:
A directional coupler is a four-port waveguide junction as shown
below. It Consists of a primary waveguide 1-2 and a secondary waveguide
3-4. When all Ports are terminated in their characteristic impedances, there
is free transmission of the waves without reflection, between port 1 and
port 2, and there is no transmission of power between port I and port 3 or
between port 2 and port 4 because no coupling exists between these two
pairs of ports. The degree of coupling between port 1 and port4 and
between port 2 and port 3 depends on the structure of the coupler.
The characteristics of a directional coupler can be expressed in
terms of its Coupling factor and its directivity. Assuming that the wave is
propagating from port to port2 in the primary line, the coupling factor and
the directivity are defined,
It should be noted that port 2, port 3, and port 4 are terminated in their
characteristic impedances. The coupling factor is a measure of the ratio of
power levels in the primary and secondary lines. Hence if the coupling
factor is known, a fraction of power measured at port 4 may be used to
determine the power input at port 1 .
This significance is desirable for microwave power measurements
because no disturbance, which may be caused by the power
measurements, occurs in the primary line. The directivity is a measure of
how well the forward traveling wave in the primary waveguide couples only
to a specific port of the secondary waveguide ideal directional coupler
should have infinite directivity. In other words, the power at port 3 must be
zero because port 2 and portA are perfectly matched. Actually well-
designed directional couplers have a directivity of only 30 to 35 dB.
Dept of ECE/ GCEM Page 51
Microwaves and Radar 10EC54
A fraction of the wave energy entered into port 1 passes through the holes
and is radiated into the secondary guide as he holes act as slot antennas.
The forward waves in the secondary guide are in same phase , regardless
of the hole space and are added at port 4. the backward waves in the
secondary guide are out of phase and are cancelled in port 3.
MICROWAVE CIRCULATORS:
A microwave circulator is a multiport waveguide junction in which the wave
can flow only from the nth port to the (n + I)th port in one direction Although
there is no restriction on the number of ports, the four-port microwave
circulator is the most common. One type of four-port microwave circulator
is a combination of two 3-dB side hole directional couplers and a
rectangular waveguide with two non reciprocal phase shifters.
The operating principle of a typical microwave circulator can be analyzed with the
aid of Fig shown above .Each of the two 3-dB couplers in the circulator
introduces a phase shift of 90°, and each of the two phase shifters produces a
certain amount of phase change in a certain direction as indicated. When a wave
is incident to port 1,the wave is split into two components by coupler I. The wave
in the primary guide arrives at port 2 with a relative phase' change of 180°. The
second wave propagates through the two couplers and the secondary guide and
arrives at port 2 with a relative phase shift of 180°. Since the two waves reaching
port 2 are in phase, the power transmission is obtained from port 1 to port 2.
However, the wave propagates through the primary guide, phase shifter, and
coupler 2 and arrives at port 4 with a phase change of 270°. The wave travels
through coupler 1 and the secondary guide, and it arrives at port 4 with a phase
shift of 90°. Since the two waves reaching port 4 are out of phase by 180°, the
power transmission from port 1 to port 4 is zero. In general, the differential
shift of 180°.
MICROWAVE ISOLATORS:
end without attenuation at all. On the contrary, a reflected wave from the
output end is similarly rotated clockwise 45° by the ferrite rod. However,
since the reflected wave is parallel to the input resistive card, the wave is
thereby absorbed by the input card. The typical performance of these
isolators is about 1-dB insertion loss in forward transmission and about 20-
to 30-dB isolation in reverse attenuation.
UNIT - 3
MICROWAVE DIODES,
Transfer electron devices: Introduction, GUNN effect diodes – GaAs diode, RWH theory,
Modes of operation, Avalanche transit time devices: READ diode, IMPATT diode,
BARITT diode, Parametric amplifiers ,Other diodes: PIN diodes, Schottky barrier diodes.
7 Hours
TEXT BOOKS:
REFERENCE BOOK:
1. Microwave Engineering – David M Pozar, John Wiley, 2e, 2004
Unit-3
MICROWAVE DIODES
INTRODUCTION:
The application of two-terminal semiconductor devices at microwave frequencies
has been increased usage during the past decades. The CW, average, and peak
power outputs of these devices at higher microwave frequencies are much larger
than those obtainable with the best power transistor. The common characteristic
of all active two-terminal solid-state devices is their negative resistance. The real
part of their impedance is negative over a range of frequencies. In a positive
resistance the current through the resistance and the voltage across it are in
phase. The voltage drop across a positive resistance is positive and a power of
(12 R) is dissipated in the resistance.
In a negative resistance, however, the current and voltage are out of
phase by 180°. The voltage drop across a negative resistance is negative,
and a power of (-I!R) is generated by the power supply associated with the
negative resistance. In positive resistances absorb. power (passive
devices), whereas negative resistances generate power (active devices).
In this chapter the transferred electron devices(TEDs) are analyzed.
The differences between microwave transistors and transferred electron
devices (TEDs) are fundamental. Transistors operate with either junctions or gates,
but TEDs are bulk devices having no junctions or gates. The majority of transistors
Gunn effect are named after J. B. Gunn who is 1963 discovered a periodic
fluctuation of current passing through the n- type gallium arsenide . when
the applied voltage exceeded a certain critical value.
Shockley in 1954 suggested that the two terminal negative resistance devices
using semiconductors had advantages over transistors at high frequencies.
Finally Kroemer stated that the origin of the negative differential mobility is
Ridley Watkins Hilsum‟s mechanism of electron transfer into the valleys
that occur in conduction bands.
Gunn effect:
The below figure shows the diagram of a uniform n-type GaAs diode with ohmic
contacts at the end surfaces. Gunn stated that “ Above some critical voltage ,
Gunn Diodes
Single piece of GaAs or Inp and contains no junctions
Applications:
low-noise local oscillators for mixers (2 to 140 GHz).
Gunn also discovered that the threshold electric field Eili varied with the
length and type of material. He developed an elaborate capacitive probe
for plotting the electric field distribution within a specimen of n-type GaAs
of length L = 210 JLIll and cross-sectional area 3.5 x 10-3 cm2 with a low-
field resistance of 16 n. Current instabilities occurred at specimen voltages
above 59 V, which means that the threshold field is
Many explanations have been offered for the Gunn effect. In 1964
Kroemer [6] suggested that Gunn' s observations were in complete
agreement with the Ridley-Watkins-Hilsum (RWH) theory.
current density 10is generated. As the applied field (or voltage) is increased to E1 (or
V2), the current density is decreased to 12. When the field (or voltage) is decr~ to £.
(or VI), the current density is increased to 1, . These phenomena of the voltage
controlled negative resistance are shown in Fig. 7-2-3(a). Similarly, for the current
[II]. According to the energy band theory of the n -type GaAs, a high-mobility
Electron densities in the lower and upper valleys remain the same under an
Equilibrium condition. When the applied electric field is lower than the electric
field of the lower valley (E < Ee), no electrons will transfer to the upper valley.
When the applied electric field is higher than that of the lower valley and
lower than that of the upper valley (Ee < E < Eu)), electrons will begin to
transfer to the upper valley.
when the applied electric field is higher than that of the upper valley (Eu <
E), all electrons will transfer to the upper valley.
Dept of ECE/ GCEM Page 67
Microwaves and Radar 10EC54
When a sufficiently high field E is applied to the specimen, electrons are
accelerated and their effective temperature rises above the lattice temperature
also increases. Thus electron density/I and are both functions of electric field E.
Gunn oscillation mode: This mode is defined in the region where the product of
frequency multiplied by length is about 107 cm/s and the product of doping
multiplied by length is greater than 1012/cm2.In this region the device is unstable
because of the cyclic formation of either the accumulation layer or the high field
domain.
Dept of ECE/ GCEM Page 68
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The drop in current at the threshold can lead to oscillations in the bias
circuit that are typically 1 kHz to 100 MHz .
Delayed domain mode (106 cm/s < fL < 107 cm/s). When the transit time is
Chosen so that the domain is collected while E < Eth as shown in Fig. 7-3-4(b), a
LSA MODE
When the frequency is very high, the domains do not have sufficient time to form
While the field is above threshold. As a result, most of the domains are maintained
In the negative conductance state during a large fraction of the voltage cycle. Any
Accumulation of electrons near the cathode has time to collapse while the signal is
Below threshold. Thus the LSA mode is .the simplest mode of operation.
READ DIODE:
Read diode was the first proposed avalanche diode. The basic operating
principles of IMPATT diode can be easily understood by first
understanding the operation of read diode.
The basic read diode consists of four layers namely n+ p I p+ layers. The plus
superscript refers to very high doping levels and „i‟ denotes intrinsic layer.A large
Dept of ECE/ GCEM Page 71
Microwaves and Radar 10EC54
reverse bias is applied across diode . the avalanche multiplication occurs in the
thin “p” region which is also called the high field region or avalanche region.
The holes generated during the avalanche process drift through the
intrinsic region while moving towards p+ contact. The region between n+ p
junction and the i-p+ junction is known as space charge region.
When this diode is reverse biased and placed inside an inductive microwave cavity
microwave oscillations are produced due to the resonant action of the capacitive
impedance of the diode and cavity inductance. The dc bias power is converted into
IMPATT DIODE:
lmpatt diodes are manufactured having different forms such as n+pip+,
p+nin+, p+nn+ abrupt junction and p+ i n+ diode configuration. The
material used for manufacture of these modes are either Germanium,
Silicon, Gallium Arsenide (GaAs) or Indium Phosphide (In P).
Out of these materials, highest efficiency, higher operating frequency and lower
noise is obtained with GaAs. But the disadvantage with GaAs is complex
fabrication process and hence higher cost. The figure below shows a reverse
biased n+ pi p+ diode with electric field variation, doping concentration versus
distance plot, the microwave voltage swing and the current variation.
PRINICPLE OF OPERATION:
When a reverse bias voltage exceeding the breakdown voltage is applied,
a high electric field appears across the n+ p junction. This high field
intensity imparts sufficient energy to the valence electrons to raise
themselves into the conduction band. This results avalanche multiplication
of hole-electron pairs. With suitable doping profile design, it is possible to
make electric field to have a very sharp peak in the close vicinity of the
junction resulting in "impact avalanche multiplication". This is a cumulative
process resulting in rapid increase of carrier density. To prevent the diode
from burning, a constant bias source is used to maintain average current at
safe limit 10, The diode current is contributed by the conduction electrons
which move to the n+ region and the associated holes which drift through
the steady field and a.c. field.· The diode ~wings into and out of avalanche
conditions under the influence of that reverse bias steady field and the a.c. field.
Due to the drift time of holes being' small, carriers drift to the end contacts
before the a.c. voltage swings the diode out of the avalanche Due to
building up of oscillations, the a.c. field takes energy from the applied bias
lid the oscillations at microwave frequencies are sustained across the
diode. Due to this a.c. field, the hole current grows exponentially to a
maximum and again decays exponentially to Zero.
During this hole drifting process, a constant electron current is induced in the
external Circuit which starts flowing when hole current reaches its peak and
continues for half cycle Corresponding to negative swing of the a.c. voltage as
shown in figure Thus a 180 degrees Phase shift between the external current and
The resonator is usually tuned to this frequency so that the IMPATI diodes
provide a High power continuous wave (CW) and pulsed microwave signals.
Page 75
Microwaves and Radar 10EC54
TRAPATT DIODE:
Silicon is usually used for the manufacture of TRAPATT diodes and have a
configuration of p+ n n+ as shown .The p-N junction is reverse biased beyond
the breakdown region, so that the current density is larger. This decreases the
electric field in the space charge region and increases the carrier transit time.
Due to this, the frequency of operation gets lowered to less than 10 GHz. But
the efficiency gets increased due to low power dissipation.
Inside a co-axial resonator, the TRAPATT diode is normally mounted at a
point where maximum RF voltage swing is obtained. When the combined
dc bias and RF voltage exceeds breakdown voltage, avalanche occurs and
a plasma of holes and electrons are generated which gets trapped. When
the external circuit current flows, the voltage rises and the trapped plasma
gets released producing current pulse across the drift space. The total
transit time is the sum of the drift time and the delay introduced by the
release of the trapped plasma. Due to this longer transit time, the operating
frequency is limited to 10 GHz. Because the current pulse is associated
with low voltage, the power dissipation is low resulting in higher efficiency.
The disadvantages of TRAPATT are high noise figure and generation of
strong harmonics due to short duration of the current pulse.
TRAPATT diode finds application in S-band pulsed transmitters for pulsed
array radar systems.
PARAMETRIC AMPLIFIERS:
extensively used in systems such as long range radars, satellite ground stations,
the signal (at the signal frequency) resulting in amplification. This occurs at the
active device where the capacitive reactance varies at the pump frequency.
The voltage across the varactor is increased by the pumping signal at each signal
voltage peak as shown above i.e., energy is taken from the pump source and added
to the signal at the signal frequency. With an input circuit and load connected,
amplification results.
Dept of ECE/ GCEM Page 80
Microwaves and Radar 10EC54
two sinusoidal signals fp and fs applied across a lossless time varying non-
linear capacitance Cj (t). At the output of this varying capacitance,
harmonics of the two frequencies fp and fs are generated.
These harmonics are separated using band-pass filters having very narrow
bandwidth.
The power at these harmonic frequencies is dissipated in the respective
resistive loads.
As an example, let us consider the case when the power output flow is
allowed at the sum frequency fp + fs only, with all the remaining harmonics
being open circuited. With the above rest ructions, the quantities „m' and „n'
can take on values -1,0 and respectively.
Thus the power gain is the ratio of output to input frequency. This type of
parametric device is called "Sum-frequency parametric amplifier" or "up-
converter".
On the other hand, if the signal frequency is fp + fs and output frequency is
fs' then
Silicon is the semiconductor normally used because of its power handling capability
and it offers high resistively for the intrinsic region. But, now-a-days Gallium
Arsenide (GaAs) is also being used. Metal layers are attached for contact purposes.
PIN diode acts as a more or less ordinary diode at frequencies upto about 100
MHz. At high frequencies, it ceases to rectify and then acts as a variable
resistance with an equivalent circuit and a resistance-voltage characteristics .In
'the equivalent circuit, Land C represent the package inductance and capacitance
p p respectively. R is the bulk semiconductor layer and contact resistance. R.
and C. represent the respective junction resistance and capacitance of the
intrinsic layer. When the bias is varied on the PIN diode, its microwave resistance
R. changes from a typical value of 6 K under J
negative bias to perhaps 5 Q when the bias is positive .Thus, if the diode is
mounted across a 50 Q co-axial line, it will not significantly load this line
when it is back-biased, so that the power flow will not be interfered with.
However, if the diode is now forward biased, its resistance drops
significantly to 5Q, so that most of the power is reflected and hardly any is
transmitted; the diode is acting as a switch.
Ideally, a switch should have zero insertion loss in the ON state and infinite
attenuation in the OFF state. Realistic switching elements, of course, result in some
insertion loss for the ON state and finite attenuation for the OFF state due to
Forward Bias: When the PIN diode is forward biased, the capacitors C and
C. almost behave as open circuits so that the equivalent circuit can now be
simplified where Rf is the total forward resistance of the PIN diode given by
Reverse bias: When the PIN diode is reverse biased, the capacitance of
the intrinsic layer C. becomes significant and Rr will be the equivalent
reverse resistance and the simplified equivalent circuit for reverse biased
PIN diode can be constructed as shown.
The diode impedance Zd of the PIN diode under reverse bias, is then given by
Reverse bias: When the PIN diode is reverse biased, the capacitance of
the intrinsic layer C. becomes significant and Rr will be the equivalent
reverse resistance and the simplified equivalent circuit for reverse biased
PIN diode can be constructed ;
The diode impedance Zd of the PIN diode under reverse bias, is then given by
When the biasing condition is reversed (D( reverse biased and Dz forward
biased), connection is established between RF input and output II.
minority carrier flow in the reverse-biased condition of the diode. Due to this
elimination of holes, there is no delay due to hole-electron recombination (which is
present in junction diodes) and hence the operation is faster. Because of larger
contact area of rectifying contact compared to crystal diode, the forward resistance is
lower as also noise. Noise figures as low as 3dB have been obtained with these
diodes. Just like crystal diodes, the schottky diodes are also used in
detection and mixing.
UNIT – 4
Microwave network theory and passive devices. Symmetrical Z and Y parameters, for
reciprocal Networks, S matrix representation of multi port networks.
6 Hours
TEXT BOOKS:
1. Microwave Devices and circuits- Liao / Pearson Education.
REFERENCE BOOK:
1. Microwave Engineering – David M Pozar, John Wiley, 2e, 2004
UNIT – 4
INTRODUCTION
In a low frequency network, the input and output variables are voltage and
current which can be related in terms of impedance Z-parameters, or
admittance Y-parameters or hybrid h-parameters or ABCD parameters. These
relationships for a two-port network of figure 4.1 can be represented by
and all "b's" the reflected waves from the microwave junction coming out of the
respective ports.
In this case also, equations (4.18) and (4.19) are still valid where S.. and
S. have the following meanings:
Sii= Scattering coefficient corresponding to the input power applied
th
at IJ the i1hport and output power coming out of j port and
th
Sjj = Scattering coefficient corresponding to the power applied at the i port
" . and output taken out of i1hport itself. This coefficient is a measure of
th
amount of mismatch between the i port and the junction.
PROPERTIES OF S-MATRIX
In general the scattering parameters are complex quantities having the
following Properties:
Property (1) : When any Z1h port is perfectly matched to the junction, then
there are no reflections from that port. Thus S ..= O. If all the ports are
perfectly matched, then the leading diagonal II elements will all be zero.
Property (2) : Symmetric Property of S-matrix:- If a microwave junction
satisfies reciprocity condition and if there are no active devices, then S
parameters are equal to their corresponding transposes.
When the junction is lossless, then no real power can be delivered to the network.
Thus, if the characteristic impedances of all the ports are identical and assumed to
When the reference planes 1 and 2 are shifted outward to I' and 2' by
electrical phase shifts,
We know that impedance or admittance matrix for an N-port network represent all
the circuit characteristics of the device at any given frequency. Like the impedance
or admittance matrix for an N-port network, the [S] matrix also provides q complete
description of the network as seen at its N ports. While the [Z] and [Y] matrices relate
the total voltages and currents at the ports, the [S] matrix relates the voltage waves
incident on the ports to those reflected from the ports .
From equation (4.52), the scattering matrix [S] is related to the impedance
matrix [Z] by
In a similar way, the relationship between [S] and the admittance [Y] can
also be expressed as
(3) The case of [Z] and [Y] matrices, the voltages and currents are functions
of complex impedances and admittances respectively. When the reference
planes are changed, there is change in both magnitude and phase of the
impedances and admittances. But, in the case of [S] matrix, the change in
reference plane changes only the phase of the scattering parameters.
UNIT – 5
4 Hours
TEXT BOOKS:
1. Microwave Devices and circuits- Liao / Pearson Education.
.
2. Microwave Engineering – Annapurna Das, Sisir K Das TMH Publication,
2001.
REFERENCE BOOK:
1. Microwave Engineering – David M Pozar, John Wiley, 2e, 2004
UNIT -5
MICROWAVE PASSIVE DEVICES
(ii) Semi-rigid co-axial cable: Figure 5.2 shows the cross-sectional view of semi-
rigid co-axial cable. Semi rigid co-axial cables make use of thin outer conductor
made of copper and a strong inner conductor also made of copper. The region
between the inner and outer conductor contains a solid dielectric. These cables
can bent for convenient routing and are not as flexible as the first type.
(ill) Rigid co-axial cable: Figure 5.3 shows the structure of a rigid co-axial
cable consisting of inner and outer conductor with air as dielectric. To support
the inner conductor at the centre dielectric spacers are introduced at regular
intervals as shown. The thickness of these dielectric spacers is made small so
that they do not produce significant discontinuities to the wave propagation.
Dept of ECE/ GCEM Page 108
Microwaves and Radar 10EC54
Co-axial cables can be used upto microwave -range of frequencies. Beyond these
frequencies attenuation becomes very large (since attenuation increases with
frequency) which makes co-axial cables unsuitable at higher frequencies. Some
characteristics of standard coaxial cables with their radio guide (RG) and universal
GHz and has a very low voltage standing wave ratio (VSWR). This connector
Spectra Inc. SMA connectors are used on components for microwave systems. The
disadvantage with these connectors is that at high frequencies greater than 24 GHz,
ATTENUATORS:
In order to control power levels in a microwave system by partially
absorbing the transmitted microwave signal, attenuators are employed.
Resistive films (dielectric glass slab coated with aquadag) are used in the
design of both fixed and variable attenuators.
A co-axial fixed attenuator uses the dielectric lossy material inside the
centre conductor of the co-axial line to absorb some of the centre
conductor microwave power propagating through it dielectric rod decides
the amount of attenuation introduced. The microwave power absorbed by
the lossy material is dissipated as heat.
In waveguides, the dielectric slab coated with aduadag is placed at the centre of
the waveguide parallel to the maximum E-field for dominant TEIO mode. Induced
current on the lossy material due to incoming microwave signal, results in power
dissipation, leading to attenuation of the signal. The dielectric slab is tapered at
both ends upto a length of more than half wavelength to reduce reflections as
shown in figure 5.7. The dielectric slab may be made movable along the breadth
of the waveguide by supporting it with two dielectric rods separated by an odd
multiple of quarter guide wavelength and perpendicular to electric field. When the
slab is at the centre, then the attenuation is maximum (since the electric field is
Dept of ECE/ GCEM Page 113
Microwaves and Radar 10EC54
concentrated at the centre for TEIO mode) and when it is moved towards
one side-wall, the attenuation goes on decreasing thereby controlling the
microwave power corning out of the other port.
Figure 5.8 shows a flap attenuator which is also a variable attenuator. A semi-
circular flap made of lossy dielectric is made to descend into the longitudinal
slot cut at the centre of the top wall of rectangular waveguide. When the flap
is completely outside the slot, then the attenuation is zero and when it is
completely inside, the attenuation is maximum. A maximum direction of 90 dB
attenuation is possible with this attenuator with a VSWR of 1.05. The
dielectric slab can be properly shaped according to convenience to get a
linear variation of attenuation within the depth of insertion.
A precision type variable attenuator consists of a rectangular to circular transition
(ReT), a piece of circular waveguide (CW) and a circular-to-rectangular transition
Dept of ECE/ GCEM Page 114
Microwaves and Radar 10EC54
(CRT) as shown in figure 5.9. Resistive cards R , Rand R are placed inside these
sections as shown. The centre circular section containing the resistive card Rb
can be precisely rotated by 3600 with respect to the two fixed resistive cards.
The induced current on the resistive card R due to the incident signal is
dissipated as heat producing attenuation of the transmitted signal. TE mode in
RCT is converted into TE in circular waveguide. The resistive cards R and R a
kept perpendicular to the electric field of TEIO mode so that it does not absorb
the energy. But any component parallel to its plane will be readily absorbed.
Hence, pure TE mode is excited in circular waveguide section. II
If the resistive card in the centre section is kept at an angle 8 relative to the E-
field direction of the TEll mode, the component E cos8 parallel to the card get
absorbed while the component E sin 8 is transmitted without attenuation. This
component finally comes out as E sin2θ as shown in figure 5.10.
PHASE SHIFTERS:
A microwave phase shifter is a two port device which produces a variable
shift in phase of the incoming microwave signal. A lossless dielectric slab
when placed inside the rectangular waveguide produces a phase shift.
The length I is adjusted such that these two components E1 and Ez have
equal amplitude but differing in phase by = 90°.
The quarter wave sections convert a linearly polarized TEll wave into a circularly
polarized wave and vice-versa. After emerging out of the half-wave section, the
After emerging out of the half-wave section, the field components E3 and E4 as
given by equations (5.19) and (5.20), may again be resolved into two TEll mQdes,
polarized parallel and perpendicular to the output quarterwave plate. At the output
end of this quarterwave plate, the field components parallel and perpendicular to the
An H-plane tee is a waveguide tee in which the axis of its side arm
is shunting the E field or parallel to the H-field of the main guide.
If two input waves are fed into port 1 and port 2 of the collinear
arm, the output wave at port 3 will be in phase and additive .
Dept of ECE/ GCEM Page 121
Microwaves and Radar 10EC54
If the input is fed into port 3, the wave will split equally into port 1
and port 2 in phase and in same magnitude .
1. If two waves of equal magnitude and same phase are fed into
port 1 and port 2 the output will be zero at port 3 and additive at
port 4.
port 1 and port 2 of the collinear arms and will not appear
at port 3.
4. If a wave is fed into port 3 , it will produce an output of
DIRECTIONAL COUPLERS:
A directional coupler is a four-port waveguide junction as
shown below. It Consists of a primary waveguide 1-2 and a
secondary waveguide 3-4. When all Ports are terminated in their
characteristic impedances, there is free transmission of the waves
without reflection, between port 1 and port 2, and there is no
transmission of power between port I and port 3 or between port 2
and port 4 because no coupling exists between these two pairs of
ports. The degree of coupling between port 1 and port4 and
between port 2 and port 3 depends on the structure of the coupler.
The characteristics of a directional coupler can be expressed
in terms of its Coupling factor and its directivity. Assuming that the
wave is propagating from port to port2 in the primary line, the
coupling factor and the directivity are defined,
A fraction of the wave energy entered into port 1 passes through the holes and is
radiated into the secondary guide as he holes act as slot antennas. The forward
waves in the secondary guide are in same phase , regardless of the hole space and
are added at port 4. the backward waves in the secondary guide are out of
phase and are cancelled in port 3.
2. Microwave power fed into port (I) cannot comc out of port (3) as port (3)
is the back port. Therefore the scattering co-efficient S13 is zero...'
4. Let us assume that port (3) and (4) are perfectly matched to the junction so that
Then, the remaining two ports will be "automatically" matched to the junction
With the above characteristic values for S-parameters, the matrix of (5.125)
becomes
UNIT - 6
STRIP LINES: Introduction, Microstrip lines, Parallèle strip lines, Coplanar strip lines,
Shielded strip Lines.
6 Hours
TEXT BOOKS:
REFERENCE BOOK:
1. Microwave Engineering – David M Pozar, John Wiley, 2e, 2004
UNIT – 6
STRIP LINES
There is a "hot" conductor which is the track on the top, and a "return"
conductor which is the backplane on the bottom. Microstrip is therefore a
variant of 2-wire transmission line.
If one solves the electromagnetic equations to find the field distributions, one
finds very nearly a completely TEM (transverse electromagnetic) pattern. This
means that there are only a few regions in which there is a component of
electric or magnetic field in the direction of wave propagation.
The field pattern is commonly referred to as a Quasi TEM pattern. Under some
conditions one has to take account of the effects due to longitudinal fields. An
example is geometrical dispersion, where different wave frequencies travel at
different phase velocities, and the group and phase velocities are different.
The quasi TEM pattern arises because of the interface between the dielectric
substrate and the surrounding air. The electric field lines have a discontinuity in
direction at the interface. The boundary conditions for electric field are that the
normal component (ie the component at right angles to the surface) of the electric
field times the dielectric constant is continuous across the boundary; thus in the
dielectric which may have dielectric constant 10, the electric field suddenly drops
to 1/10 of its value in air. On the other hand, the tangential component
(parallel to the interface) of the electric field is continuous across the
boundary. In general then we observe a sudden change of direction of electric
field lines at the interface, which gives rise to a longitudinal magnetic field
component from the second Maxwell's equation, curl E = - dB/dt.
Since some of the electric energy is stored in the air and some in the dielectric,
the effective dielectric constant for the waves on the transmission line will lie
somewhere between that of the air and that of the dielectric. Typically the
effective dielectric constant will be 50-85% of the substrate dielectric constant.
SUBSTRATE MATERIALS:
is very expensive, can only be made in small sheets; has high dielectric
constant so is used for very compact circuits at high frequencies; has
low dielectric loss; has excellent thermal properties and surface polish.
o Dielectric constant 9.4 to 11.6 depending on crystal orientation
(slow substrate)
o Loss tangent 5/100,000
o Surface roughness 1/100 micron
o High thermal conductivity 0.4 watts per sq cm per degree K
Single crystal Gallium Arsenide (GaAs) and Silicon (Si) are both
used for monolithic microwave integrated circuits (MMICs).
o Dealing with GaAs first we have.....
Dielectric constant 13 (slow substrate)
Loss tangent 6/10,000 (high resistivity GaAs)
Surface roughness 1/40 micron
Thermal conductivity 0.3 watts per sq cm per degree K (high)
The dielectric strength of ceramics and of single crystals far exceeds the strength
of plastics, and so the power handling abilities are correspondingly higher, and
Transmission lines on either of the interior metal layers behave very nearly
like "classic" stripline, the slight asymmetry is not a problem. Excellent
"broadside" couplers can be made by running transmission lines parallel to
each other on the two surfaces.
Other variants of the stripline are offset strip line and suspended air
stripline (SAS).
For stripline and offset stripline, because all of the fields are constrained to
the same dielectric, the effective dielectric constant is equal to the relative
dielectric constant of the chosen dielectric material. For suspended
stripline, you will have to calculate the effective dielectric constant, but if it
is "mostly air", the effective dielectric constant will be close to 1.
This means that it is non-dispersive, and has no cutoff frequency. Whatever circuits
you can make on microstrip (which is quasi-TEM), you can do better using stripline,
unless you run into fabrication or size constraints. Stripline filters and couplers
The second disadvantage of stripline is that because of the second ground plane,
the strip widths are much narrower for a given impedance (such as 50 ohms) and
board thickness than for microstrip. A common reaction to problems with microstrip
circuits is to attempt to convert them to stripline. Chances are you'll end
up with a board thickness that is four times that of your microstrip board to get
equivalent transmission line loss. That means you'll need forty mils thick
strip line to replace ten mil thick micro strip! This is one of the reasons that
soft-board manufacturers offer so many thicknesses.
Stripline equations
The configuration of strip line consisting of a thin conducting strip of width "w"
much greater than its thickness "t". This strip line is placed at the centre
surrounded by a low-loss dielectric substrate of thickness "b", between two
ground plates as shown. The mode of propagation is TEM (transverse
electro-magnetic) wave where the electric field lines are perpendicular to the
strip and concentrated at the centre of the strip. Fringing field lines also exist
at the edges .When the dimension 'b' is less than half wavelength, the field
cannot propagate in transverse direction and is attenuated exponentially. The
energy will be confined to the line cross-section provided a> 5b. The
commonly used dielectrics are teflon,polyolefine, polystyrene etc., and the
operating frequency range extends from 100 MHz to 30 GHz.
2. Radiation losses:
At microwave frequencies , the microstrip line acts as an antenna radiating a small
amount of power resulting in radiation losses. This loss depends on the thickness
Advantages:-
The advantages of planar transmission lines are
(a) very small size and hence low weight
(b) can be easily mounted on a metallic body including substrate.
(c) increased reliability
(d) cost is reduced due to small size
(e) series and shunt maintaining of components is possible
(f) the characteristic impedance Zo is easily controlled by defining the
dimensions of the line in a single plane
(g) by changing the dimensions of the line in one plane only, it is possible
to achieve accurate passive circuit design
Disadvantages:-
The disadvantages of planar transmission lines are
(a) low power handling capability due to small size
(b)The microstrip, slot and coplanar lines tend to radiate power resulting in
radiation losses
(c) low Q-factor
UNIT – 7
AN INTRODUCTION TO RADAR: Basic Radar, The simple form of the Radar equation,
Radar block diagram, Radar frequencies, application of Radar, the origins of Radar.
8 Hours
TEXT BOOKS:
1. Microwave Devices and circuits- Liao / Pearson Education.
rd
2.Introduction to Radar systems-Merrill I Skolnik, 3 Ed, TMH, 2001.
4. Microwave Engineering – Annapurna Das, Sisir K Das TMH Publication,
2001.
REFERENCE BOOK:
1. Microwave Engineering – David M Pozar, John Wiley, 2e, 2004
UNIT – 7
INTRODUCTION TO RADAR
The maximum radar range Rmax is the distance beyond which the
target cannot be detected. It occurs when the received echo signal
power P, just equals the minimum detectable signal Smin
.
This is the fundamental form of the radar equation.
(1.7), first for A, then for G, to give two other forms of the radar
equation
These three forms (Eqs. 1.7, 1.9, and 1.10) illustrate the need to be
careful in the interpretation of the radar equation.
1. With the help of a block diagram, explain the operation of a radar system.
2. Derive radar range and equation.
3. Derive the radar equation. Discuss the effects of each parameter
on the maximum detection range of the radar.
4.Write short notes of origin of radar
5.Wrtie any five important applications of Radar.
6. Write the frequency band designation of Radars
UNIT – 8
MTI AND PULSE DOPPLER RADAR: Introduction to Doppler and MTI Radar, delay line
Cancellers, digital MTI processing, Moving target detector, pulse Doppler Radar.
7 Hours
TEXT BOOKS:
1. Microwave Devices and circuits- Liao / Pearson Education.
rd
2. Introduction to Radar systems-Merrill I Skolnik, 3 Ed, TMH, 2001.
3. Microwave Engineering – Annapurna Das, Sisir K Das TMH Publication,
2001.
REFERENCE BOOK:
1. Microwave Engineering – David M Pozar, John Wiley, 2e, 2004
UNIT - 8
MTI AND PULSE DOPPLAR RADAR
A radar detects the presence of objects and locates their position in space
by transmitting electromagnetic energy and observing the returned echo.
A pulse radar transmits a relatively short burst of electromagnetic energy,
after which the receiver is turned on to listen for the echo. The echo not only
indicates that a target is present, but the time that elapses between the
transmission of the pulse and the receipt of the echo is a measure of the
distance to the target. Separation of the echo signal and the transmitted
signal is made on the basis of differences in time.
even less. Separate antennas for transmission and reception help segregate
the weak echo from the strong leakage signal, but the isolation is usually
not sufficient. A feasible technique for separating the received signal from
the transmitted signal when there is relative motion between radar and
It is well known in the fields of optics and acoustics that if either the
source of oscillation or the observer of the oscillation is in motion, an
apparent shift in frequency will result. This is the doppler effect.
where fd = doppler frequency shift and L). = relative (or radial) velocity of
8.2 CW RADAR
Let us consider the simple CW radar as illustrated by the block
diagram below. The transmitter generates a continuous (unmodulated)
oscillation of frequency fo, which is radiated by the antenna. A portion of
the radiated energy is intercepted by the target and is scattered, some of
If the target is in motion with a velocity v, relative to the radar, the received
signal will be shifted in frequency from the transmitted
The received echo signal at a frequency enters the radar via the antenna
and is heterodyned in the detector (mixer) with a portion of the
Fig 8.1
Applications of CW radar:
6. It has also seen application for intruder alarms and for the
measurement of the velocity of missiles, ammunition, and
baseballs.
amplitude modulation is the pulse radar. The narrower the pulse, the
more accurate the measurement of range and the broader the
transmitted spectrum.
Fig 8.3
When more than one target is present within the view of the radar, the
mixer output will contain more than one difference frequency. If the
system is linear, there will be a frequency component corresponding to
each target. In principle, the range to each target may be determined by
measuring the individual frequency components.
Fig 8.4
The doppler signal may be readily discerned from the information
contained in a single pulse. If, on the other hand, f b is small compared
with the reciprocal of the pulse duration, the pulses will be modulated
with an amplitude.
Fig 8.5
Fig 8.5
suitable for display on the PPI scope is with a delay-line canceller.. The
delay-line canceller acts as a filter to eliminate the d-c component of
fixed targets
and to pass the a-c components of moving targets. The video portion of
the receiver is divided into two channels. One is a normal video channel.
In the other, the video signal experiences a time delay equal to one pulse-
repetition period (equal to the reciprocal of the pulse-repetition
frequency). The outputs from the two channels are subtracted from one
another. The fixed targets with unchanging amplitudes from pulse to
pulse are canceled on subtraction. However, the amplitudes of the
moving-target echoes are not constant from pulse to subtraction results
in an uncancelled residue. The output of the subtraction circuit is
bipolar video, just as was the input. Before bipolar video can intensity-
modulate a PPI display, it must be converted to unipotential voltages
(unipolar video) by a full-wave rectifier.
Fig 8.7
Fig 8.8
Before the development of the klystron amplifier, the only high-power
transmitter available at microwave frequencies for radar application
was the magnetron oscillator.
IF reference pulse. The phase of the coho is then related to the phase
of the transmitted pulse and may be used as the reference signal for
echoes received from that particular transmitted pulse.
Upon the next transmission another IF locking pulse is generated to
relock the phase of the CW coho until the next locking pulse comes
along.
The early acoustic delay lines developed during World War 11 used liquid
delay lines filled with either water or mercury.' Liquid delay lines were
Dept of ECE/ GCEM Page 178
Microwaves and Radar 10EC54
The delay-line canceller acts as a filter which rejects the d-c component
of clutter. Because of its periodic nature, the filter also rejects energy in
the vicinity of the pulse repetition frequency and its harmonics.
Fig 8.9
Blind speeds: The response of the single-delay-line canceller will be zero
whenever the argument Пfd T in the amplitude factor.
Dept of ECE/ GCEM Page 180
Microwaves and Radar 10EC54
The blind speeds are one of the limitations of pulse MTI radar which do
not occur with CW radar. They are present in pulse radar because
doppler is measured by discrete samples (pulses) at the prf rather than
continuously. If the first blind speed is to be greater than the maximum
radial velocity expected from the target, the product ,If the first blind
speed must be large. Thus the MTI radar must operate at long
wavelengths (low frequencies) or with high pulse repetition frequencies,
or both.
Double cancellation:
The frequency response of a single-delay-line canceller does not
always have as broad a clutter-rejection null as might be desired in the
vicinity of d-c. The clutter-rejection notches may be widened by passing
the output of the delay-line canceller through a second delay-line
canceller. The output of the two single-delay line cancellers in cascade is
the square of that from a single canceller.
Fig 8.10
Fig 8.11
which is the same as the output from the double-delay-line canceller
The use of more than one pulse repetition frequency offers additional
flexibility in the design of MTI doppler filters. It not only reduces the
effect of the blind speeds but it also allows a sharper low-frequency
cutoff in the frequency response than might be obtained with a
cascade of single-delay-line cancelers.
Fig 8.12
channel, since a 90" phase change (П/2 radians) is introduces into the
coherent reference signal at the phase detector. This causes the outputs of
the two detectors to be 90 degrees out of phase.
The purpose of the quadrature channel is to eliminate the effects of blind
phases.It is desirable to eliminate blind phases in any MTI processor, but
it is seldom done with analog delay-line cancelers because of the complexity
of the added analog delay lines of the second channel. The convenience of
digital processing allows the quadrature channel to be added without
significant burden so that it is often included in digital processing systems.
It is for this reason it is shown in this block diagram, but was not included
Fig 8.13
Following the phase detector the bipolar video signal is sampled at a rate
sufficient to obtain one or more samples within each range resolution
cell. These voltage samples are converted to a series of digital words by
the analog-to-digital (A/D) converter.
The digital words are stored in a digital memory for one pulse repetition
period and are then subtracted from the digital words of the next sweep.
The digital outputs of the I and Q channels are combined by taking the
A block diagram of the MTD processor is shown in Fig . The input on the
left is from the output of the I and Q AID converters. The three-pulse
canceler and the eight-pulse Doppler filter-bank eliminate zero-velocity
clutter and generate eight overlapping filters covering the doppler
interval, as described in the previous section. The use of a three-pulse
canceler ahead of the fi1ter:bank eliminates stationary clutter and
thereby reduces the dynamic range required of the doppler filter-bank.
Fig 8.14
Separate thresholds are applied to each filter. The thresholds for the
nonzero-velocity resolution cells are established by summing the
detected outputs of the signals in the same velocity filter in 16 range
cells, eight on either side of the cell of interest. Thus, each filter output is
averaged over cne mile in range to establish the statistical mean level of
nonzero-velocity clutter (such as rain) or noise. The filter thresholds are
determined by multiplying the mean levels by an appropriate constant to
obtain the desired false-alarm probability. This application of an adaptive
threshold to each doppler filter at each range cell provides a constant
false-alarm rate (CFAR) and results in Subweather visibility in that an
aircraft with a radial velocity sufficiently different from the rain so as to
fall into another filter can be seen even if the aircraft echo is
substantially less than the weather echo.
Subclutter visibility : The ratio by which the target echo power may be
weaker than the coincident clutter echo power and still be detected with
specified detection and false alarm probabilities.
finite width to the clutter spectrum because of the finite time on target. If
the clutter spectrum is too wide because the observation time is too
short, it will affect the improvement factor. This limitation has sometimes
been called scanning fluctuations or scanning modulation.
8.11 NONCOHERENT MTI
The composite echo signal from a moving target and clutter fluctuates in
both phase and amplitude. The coherent MTI and the pulse-doppler
radar make use of the phase fluctuations in the echo signal to recognize
the doppler component produced by a moving target. In these systems,
amplitude fluctuations are removed by the phase detector. The operation
of this type of radar, which may be called coherent MTI, depends upon a
reference signal at the radar receiver that is coherent with the
transmitter signal.
It is also possible to use the amplitude fluctuations to recognize the
doppler component produced by a moving target. MTI radar which uses
amplitude instead of phase fluctuations is called noncoherent.
Fig 8.15
The noncoherent MTI radar does not require an internal coherent
reference
signal or a phase detector as does the coherent form of MTI. Amplitude
limiting cannot be employed in the non coherent MTI receiver, else the
desired amplitude fluctuations would be lost. Therefore tile IF amplifier
must be linear, or if a large dynamic range is required, it can be
logarithmic. A logarithmic gain characteristic not only provides
protection from saturation, but it also tends to make the clutter
fluctuations at its output more uniform with variations in the clutter
input amplitude.
Clutter echoes may not always be present over the range at which
detection is desired. The clutter serves the same function as does the
reference signal in the coherent MTI. If clutter were not present, the