MWE Digital Notes

MICRO WAVE ENGINEERING
(R20A0424)
LECTURE NOTES
B.TECH
(IV YEAR – I SEM)
(2023-24)
Prepared by:
Mrs.N.Saritha, Assistant Professor
Mrs.P.Swetha, Associate Professor
Department of Electronics and Communication Engineering
MALLA REDDY COLLEGE

OF ENGINEERING & TECHNOLOGY
(Autonomous Institution – UGC, Govt. of India)
Recognized under 2(f) and 12 (B) of UGC ACT 1956
(Affiliated to JNTUH, Hyderabad, Approved by AICTE - Accredited by NBA & NAAC – ‘A’ Grade - ISO 9001:2015 Certified)
Maisammaguda, Dhulapally (Post Via. Kompally), Secunderabad – 500100, Telangana State, India
B.Tech (Electronics & Communication Engineering) R-20
MALLA REDDY COLLEGE OF ENGINEERING AND TECHNOLOGY
IV Year B.Tech. ECE- I Sem L/T/P/C

3/-/-/3
(R20A0424) MICROWAVE ENGINEERING
COURSE
OBJECTIVES:
1. To analyze Waveguides in Rectangular Coordinate Systems.

2. To Use S-parameter terminology to describe circuits.
3. To explain how microwave devices and circuits are characterized in terms of their “S”
Parameters.
4. To Use microwave components such as isolators, Couplers, Circulators, Tees, Gyrators
etc..
5. To give students an understanding of basic microwave devices (both amplifiers and
oscillators).
6. To expose the students to the basic methods of microwave measurements.
UNIT I
Waveguides: Introduction, Microwave spectrum and bands, applications of Microwaves,
Rectangular Waveguides-Solution of Wave Equation in Rectangular Coordinates, TE/TM mode
analysis, Expressions for fields, Cutoff frequencies, dominant and degenerate modes, Mode
characteristics - Phase and Group velocities, wavelengths and impedance relations,
Impossibility of TEM Modes, Illustrative Problems.
UNIT II
Waveguide Components: Scattering Matrix - Significance, Formulation and properties, Wave
guide multiport junctions - E plane and H plane Tees, Magic Tee, 2-hole Directional coupler, S
Matrix calculations for E plane and H plane Tees, Magic Tee, Directional coupler, Ferrite
components - Gyrator, Isolator, Circulator, Illustrative Problems.
UNIT III
Linear beam Tubes: Limitations and losses of conventional tubes at microwave frequencies,
Classification of Microwave tubes, O type tubes - 2 cavity klystrons-structure, velocity
modulation process and Applegate diagram, bunching process and small signal theory
Expressions for o/p power and efficiency, Reflex Klystrons-structure, Velocity Modulation,
Applegate diagram, power output, efficiency.
UNIT IV
Cross-field Tubes: Introduction, Magnetrons-different types, cylindrical travelling wave
magnetron-Hull cutoff and Hartree conditions.
Microwave Semiconductor Devices: Introduction to Microwave semiconductor devices,
classification, Transfer Electronic Devices, Gunn diode - principles, RWH theory, Characteristics,
Basic modes of operation - Gunn oscillation modes, Introduction to Avalanche Transit time
devices (brief treatment only), Illustrative Problems.
Malla Reddy College of Engineering and Technology (MRCET)

B.Tech (Electronics & Communication Engineering) R-20
UNIT V
Microwave Measurements: Description of Microwave Bench – Different Blocks and their
Features, Waveguide Attenuators – Resistive Card, Rotary Vane types; Microwave Power
Measurement – Bolometer Method. Measurement of Attenuation, Frequency, VSWR, Impedance
Measurements.
TEXT BOOKS:
1) Microwave Devices and Circuits – Samuel Y. Liao, PHI, 3rd Edition,1994.

2) Microwave and Radar Engineering- M.Kulkarni, Umesh Publications,1998.
REFERENCES:
1) Foundations for Microwave Engineering – R.E. Collin, IEEE Press, John Wiley, 2nd Edition,
2002.
2) Microwave Circuits and Passive Devices – M.L. Sisodia and G.S.Raghuvanshi, Wiley Eastern
Ltd., New Age International Publishers Ltd., 1995.
3) Microwave Engineering Passive Circuits – Peter A. Rizzi, PHI, 1999.
4) Electronic and Radio Engineering – F.E. Terman, McGraw-Hill, 4th ed., 1955.
5) Elements of Microwave Engineering – R. Chatterjee, Affiliated East-West Press Pvt. Ltd.,
New Delhi,1988.
COURSE OUTCOMES
1) Understand the significance of microwaves and microwave transmission lines
2) Analyze the characteristics of microwave tubes and compare them
3) Be able to list and explain the various microwave solid state devices
4) Can set up a microwave bench for measuring microwave parameters
5) Expose to the basic methods of microwave measurements.
Malla Reddy College of Engineering and Technology (MRCET)

UNIT-I
Waveguides
Contents:
 Introduction
 Microwave spectrum and bands
 Applications of Microwaves
 Rectangular Waveguides-
 Solution of Wave Equation in Rectangular Coordinates
 TE/TM mode analysis- Expressions for fields
 Cutoff frequencies,
 Dominant and degenerate modes
 Mode characteristics - Phase and Group velocities, wavelengths and
impedance relations, Impossibility of TEM Modes
INTRODUCTION:
Microwaves are electromagnetic waves with frequencies between 300MHz (0.3GHz) and
300GHz in the electromagnetic spectrum. Radio waves are electromagnetic waves within the
frequencies 30 KHz - 300GHz, and include microwaves. Microwaves are at the higher frequency
end of the radio wave band and low frequency radio waves are at the lower frequency end. Mobile
phones, phone mast antennas (base stations), DECT cordless phones, Wi-Fi,WLAN, WiMAX and
Bluetooth have carrier wave frequencies within the microwave band of the electromagnetic
spectrum, and are pulsed/modulated. Most Wi-Fi computers in schools use 2.45GHz (carrier wave),
the same frequency as microwave ovens. Information about the frequencies can be found in Wi-Fi
exposures and guidelines. It is worth noting that the electromagnetic spectrum is divided into
different bands frequency. But the effects of electromagnetic radiation do not necessarily fit into
these artificial divisions.
A waveguide consists of a hollow metallic tube of either rectangular or circular
Microwave cross section
Engineering
used to guide electromagnetic wave. Rectangular waveguide is most commonly used as waveguide.
Waveguides are used at frequencies in the microwave range. At microwave frequencies (above
1GHz to 100 GHz) the losses in the two line transmission system will be very high and hence it
cannot be used at those frequencies. Hence microwave signals are propagated through the
waveguides in order to minimize the losses.
Microwave Spectrum and bands:
Electromagnetic Spectrum consists of entire range of electromagnetic radiation. Radiation is the
energy that travels and spreads out as it propagates. The type of electromagnetic radiation that
makes the electromagnetic spectrum is depicted in the following screenshot.
Properties of Microwaves
Following are the main properties of Microwaves.
 Microwaves are the waves that radiate electromagnetic energy with shorter
wavelength.
 Microwaves are not reflected by Ionosphere.
 Microwaves travel in a straight line and are reflected by the conducting surfaces.
 Microwaves are easily attenuated within shorter distances.
 Microwave currents can flow through a thin layer of a cable.
Advantages of Microwaves
There are many advantages of Microwaves such as the following:
 Supports larger bandwidth and hence more information is transmitted. For this
reason, microwaves are used for point-to-point communications.
 More antenna gain is possible.
 Higher data rates are transmitted as the bandwidth is more.
 Antenna size gets reduced, as the frequencies are higher.
 Low power consumption as the signals are of higher frequencies.
 Effect of fading gets reduced by using line of sight propagation.
 Provides effective reflection area in the radar systems.
 Satellite and terrestrial communications with high capacities are possible.
 Low-cost miniature microwave components can be developed.
 Effective spectrum usage with wide variety of applications in all available
frequency ranges of operation.
Disadvantages of Microwaves
There are a few disadvantages of Microwaves such as the following:
 Cost of equipment or installation cost is high.
 They are hefty and occupy more space.
 Electromagnetic interference may occur.
 Variations in dielectric properties with temperatures may occur.
 Inherent inefficiency of electric power.
Applications of Microwaves
There are a wide variety of applications for Microwaves, which are not possible for other
radiations. They are -
Wireless Communications
 For long distance telephone calls
 Bluetooth
 WIMAX operations
 Outdoor broadcasting transmissions
 Broadcast auxiliary services
 Direct Broadcast Satellite (DBS)
 Personal Communication Systems (PCSs)
 Wireless Local Area Networks (WLANs)
 Cellular Video (CV) systems
 Automobile collision avoidance system
Electronics
 Fast jitter-free switches
 Phase shifters
 HF generation
 Tuning elements
 ECM/ECCM (Electronic Counter Measure) systems
 Spread spectrum systems
Commercial Uses
 Burglar alarms
 Garage door openers
 Police speed detectors
 Identification by non-contact methods
 Cell phones, pagers, wireless LANs
 Satellite television, XM radio
 Motion detectors
 Remote sensing
Navigation
 Global navigation satellite systems
 Global Positioning System (GPS)
Military and Radar

 Radars to detect the range and speed of the target.
 SONAR applications
 Air traffic control
 Weather forecasting
 Navigation of ships
 Minesweeping applications
 Speed limit enforcement
 Military uses microwave frequencies for communications and for the above
mentioned applications.
Research Applications
 Atomic resonances
 Nuclear resonances
Radio Astronomy
 Mark cosmic microwave background radiation
 Detection of powerful waves in the universe
 Detection of many radiations in the universe and earth’s atmosphere
Food Industry
 Microwave ovens used for reheating and cooking
 Food processing applications
 Pre-heating applications
 Pre-cooking
 Roasting food grains/beans
 Drying potato chips
 Moisture levelling
 Absorbing water molecules
Industrial Uses
 Vulcanizing rubber
 Analytical chemistry applications
 Drying and reaction processes
 Processing ceramics
 Polymer matrix
 Surface modification
 Chemical vapor processing
 Powder processing
 Sterilizing pharmaceuticals
 Chemical synthesis
 Waste remediation
 Power transmission
 Tunnel boring
 Breaking rock/concrete
 Breaking up coal seams
 Active denial systems
Semiconductor Processing Techniques

 Reactive ion etching
 Chemical vapor deposition
Spectroscopy
 Electron Paramagnetic Resonance (EPR or ESR) Spectroscopy
 To know about unpaired electrons in chemicals
 To know the free radicals in materials
 Electron chemistry
Medical Applications
 Monitoring heartbeat
 Lung water detection
 Tumor detection
 Regional hyperthermia
 Therapeutic applications
 Local heating
 Angioplasty
 Microwave tomography
 Microwave Acoustic imaging
Types of waveguides
Waveguides are majorly classified as rectangular or circular but these are basically of 5 different
types:
Modes of propagation in a Waveguide
When an electromagnetic wave is transmitted through a waveguide. Then it has two field
components that oscillate mutually perpendicular to each other. Out of the two one is electric field
and the other is a magnetic field.
The figure below represents the propagation of an electromagnetic wave in the z-direction with the
two field components:
The propagation of wave inside the waveguide originates basically 2 modes. However, overall
basically 3 modes exist, which are as follows:
 Transverse Electric wave:

In this mode of wave propagation, the electric field component is totally transverse to the direction
of wave propagation whereas the magnetic field is not totally transverse to the direction of wave
propagation. It is abbreviated as TE mode.
 Transverse Magnetic wave:

In this mode of wave propagation, the magnetic field component is totally transverse to the
direction of wave propagation while the electric field is not totally transverse to the direction of
wave propagation. It is abbreviated as TM mode.
 Transverse electromagnetic wave:

In this mode of wave propagation, both the field components i.e., electric and magnetic fields are
totally transverse to the direction of wave propagation. It is abbreviated as TEM mode.
It is to be noted here that, TEM mode is not supported in waveguides. As for the TEM mode, there
is a need for the presence of two conductors and we already know that a waveguide is a single
hollow conductor.
Parameters of a Waveguide:
 Cut-off wavelength: It the maximum signal wavelength of the transmitted signal that can be
propagated within the waveguide without any attenuation. This means up to cut-off wavelength, a
microwave signal can be easily transmitted through the waveguide. It is denoted by λc.
 Group velocity: Group velocity is the velocity with which wave propagates inside the waveguide.
If the transmitted carrier is modulated, then the velocity of the modulation envelope is somewhat
less as compared to the carrier signal.
This velocity of the envelope is termed as group velocity. It is represented by V g.
 Phase velocity: It is the velocity with which the transmitted wave changes its phase during
propagation. Or we can say it is basically the velocity of a particular phase of the propagating wave.
It is denoted by Vp.
 Wave Impedance: It is also known as the characteristic impedance. It is defined as the ratio of the
transverse electric field to that of the transverse magnetic field during wave propagation at any
point inside the waveguide. It is denoted by Zg.
Advantages of waveguides
1. In waveguides, the power loss during propagation is almost negligible.

2. Waveguides have the ability to manage large-signal power.
3. As waveguides possess a simple structure thus their installation is somewhat easy.
Disadvantages of waveguides
1. Its installation and manufacturing cost is high.

2. Waveguides are generally rigid in nature and hence sometimes causes difficulty in applications
where tube flexibility is required.
3. It is somewhat large in size and bulkier as compared to other transmission lines.
It is noteworthy in the case of waveguides that their diameter must have some certain value in order
to have proper signal propagation. This is so because if its diameter is very small and the
wavelength of the signal to be propagated is large (or signal frequency is small) then it will not be
propagated properly.
So, the signal frequency must be greater than the cutoff frequency in order to have a proper signal
transmission.
Wave propagation in rectangular waveguide:
Consider a rectangular waveguide situated in the rectangular coordinate system with its breadth
along x-axis, width along y axis and the wave assumed to propagate along the z-direction. Waveguide
is filled with air and in that no TEM wave is exist.
We assumed that wave direction is along Z-direction then the wave equations are
Rectangular Wave guides:
Rectangular waveguides are the one of the earliest type of the transmission lines. They are used in many
applications. A lot of components such as isolators, detectors, attenuators, couplers and slotted lines are
available for various standard waveguide bands between 1 GHz to above 220 GHz.
A rectangular waveguide supports TM and TE modes but not TEM waves because we cannot define a
unique voltage since there is only one conductor in a rectangular waveguide. The shape of a rectangular
waveguide is as shown below. A material with permittivity e and permeability m fills the inside of the
conductor.
A rectangular waveguide cannot propagate below some certain frequency. This frequency is called the cut-
off frequency.
Here, we will discuss TM mode rectangular waveguides and TE mode rectangular waveguides separately.
Let’s start with the TM mode
TM Modes
Consider the shape of the rectangular waveguide above with dimensions a and b (assume a>b) and the
parameters e and m. For TM waves Hz = 0 and Ez should be solved from equation for TM mode;
Ñ2xy Ez0 + h2 Ez0 = 0
Since Ez(x,y,z) = Ez0(x,y)e-gz, we get the following equation,
If we use the method of separation of variables, that is E z0(x,y)=X(x).Y(y) we get,

Since the right side contains x terms only and the left side contains y terms only, they are both equal to a
constant. Calling that constant as kx2, we get;
where ky2=h2-kx2
Now, we should solve for X and Y from the preceding equations. Also we have the boundary conditions of;
Ez0(0,y)=0
Ez0(a,y)=0
Ez0(x,0)=0
Ez0(x,b)=0
From all these, we conclude that
X(x) is in the form of sin kxx, where kx=mp/a, m=1,2,3,…
Y(y) is in the form of sin kyy, where ky=np/b, n=1,2,3,…
So the solution for Ez0(x,y) is
(V/m)
From ky2=h2-kx2, we have;
For TM waves, we have

From these equations, we get
where
Here, m and n represent possible modes and it is designated as the TM mn mode. m denotes the number of
half cycle variations of the fields in the x-direction and n denotes the number of half cycle variations of the
fields in the y-direction.
When we observe the above equations we see that for TM modes in rectangular waveguides, neither m nor n
can be zero. This is because of the fact that the field expressions are identically zero if either m or n is zero.
Therefore, the lowest mode for rectangular waveguide TM mode is TM 11 .
Here, the cut-off wave number is
and therefore,
The cut-off frequency is at the point where g vanishes. Therefore,
Since l=u/f, we have the cut-off wavelength,
At a given operating frequency f, only those frequencies, which have fc<f will propagate. The modes with
f<fc will lead to an imaginary b which means that the field components will decay exponentially and will not
propagate. Such modes are called cut-off or evanescent modes.
The mode with the lowest cut-off frequency is called the dominant mode. Since TM modes for rectangular
waveguides start from TM11 mode, the dominant frequency is
The wave impedance is defined as the ratio of the transverse electric and magnetic fields. Therefore, we get
from the expressions for Ex and Hy (see the equations above);
The guide wavelength is defined as the distance between two equal phase planes along the waveguide and it
is equal to
Which is thus greater than l, the wavelength of a plane wave in the filling medium.
The phase velocity is
Which is greater than the speed of light (plane wave) in the filling material.
Attenuation for propagating modes results when there are losses in the dielectric and in the imperfectly
conducting guide walls. The attenuation constant due to the losses in the dielectric can be found as follows:
TE Modes
Consider again the rectangular waveguide below with dimensions a and b (assume a>b) and the
parameters e and m.
For TE waves Ez = 0 and Hz should be solved from equation for TE mode;
Ñ2xy Hz + h2 Hz = 0
Since Hz(x,y,z) = Hz0(x,y)e-gz, we get the following equation,
If we use the method of separation of variables, that is H z0(x,y)=X(x).Y(y) we get,
Since the right side contains x terms only and the left side contains y terms only, they are both equal to a
constant. Calling that constant as kx2, we get;
where ky2=h2-kx2
Here, we must solve for X and Y from the preceding equations. Also we have the following boundary
conditions:
at x=0
at x=a
at y=0
at y=b
From all these, we get
(A/m)
From ky2=h2-kx2, we have;
For TE waves, we have
From these equations, we obtain

where
As explained before, m and n represent possible modes and it is shown as the TEmn mode. m denotes the
number of half cycle variations of the fields in the x-direction and n denotes the number of half cycle
variations of the fields in the y-direction.
Here, the cut-off wave number is
and therefore,
The cut-off frequency is at the point where g vanishes. Therefore,
Since l=u/f, we have the cut-off wavelength,

At a given operating frequency f, only those frequencies, which have f>f c will propagate. The modes with
f<fc will not propagate.
The mode with the lowest cut-off frequency is called the dominant mode. Since TE10 mode is the minimum
possible mode that gives nonzero field expressions for rectangular waveguides, it is the dominant mode of a
rectangular waveguide with a>b and so the dominant frequency is
The wave impedance is defined as the ratio of the transverse electric and magnetic fields. Therefore, we get
from the expressions for Ex and Hy (see the equations above);
The guide wavelength is defined as the distance between two equal phase planes along the waveguide and it
is equal to
Which is thus greater than l, the wavelength of a plane wave in the filling medium.
The phase velocity is
Which is greater than the speed of the plane wave in the filling material.
The attenuation constant due to the losses in the dielectric is obtained as follows:
After some manipulation, we get

Example:
Consier a length of air-filled copper X-band waveguide, with dimensions a=2.286cm, b=1.016cm. Find the
cut-off frequencies of the first four propagating modes.
Solution:
From the formula for the cut-off frequency
Rectangular wave guide Cutoff frequencies:

The cut-off frequency is the frequency above which the waveguide offers minimum attenuation to the
propagation of the signal.
Frequencies below the cut-off frequency are attenuated by the waveguide.
The dominant mode in a waveguide is the propagation mode with the lowest cut-off frequency.
Waveguides are hollow metallic structures that carry signals from one end to another. All the signals that
propagate through a waveguide are above a certain frequency, called the cut-off frequency. Below the cut-
off frequency, waveguides fail to transfer wave energy or propagate waves.
Cut-off frequency can also be described as the frequency above which the waveguide offers minimum
attenuation to the propagation of the signal. Frequencies below the cut-off frequency are attenuated by the
waveguide. The signal propagation through a waveguide is dependent on the signal wavelength as well.
When a wavelength is too long, the waveguide stops carrying signals and becomes inoperative.
Consider a rectangular waveguide with width ‘a’ and thickness ‘b’. Let TE mn be the mode active in the
waveguide. To calculate the cut-off frequency fc of the rectangular waveguide, use the following equation,
where c is the speed of the light inside the waveguide and m and n are the numbers that define the mode of
propagation.
The lower cutoff frequency (or wavelength) for a particular mode in rectangular waveguide is determined by
the following equations (note that the length, x, has no bearing on the cutoff frequency):
where a= Inside width (m), longest dimension
b= Inside height (m), shortest dimension
m Number of ½-wavelength variations of fields in the "a" direction
= Number of ½-wavelength variations of fields in the "b" direction
n= Permittivity (8.854187817E-12 for free space)
ε= Permeability (4πE-7 for free space)
µ=
Dominant and Degenerate Modes:

Dominant Mode
The dominant mode in a waveguide is the propagation mode with the lowest cut-off frequency. The criterion
for wave propagation through the waveguide is that the operating frequency should be greater than the
dominant mode cut-off frequency. There will be minimum degradation of the signal in the dominant mode.
Degenerate Mode:
We know that the rectangular waveguide does not support TEM mode. It allows either TE mode or TM
mode. If any two modes of propagation share the same cut-off frequency, such modes are called degenerate
modes. The modes TEmn and TMmn are degenerate modes in a rectangular waveguide.
The rectangular waveguide cut-off frequency is a critical specification associated with rectangular
waveguides, below which there is no signal propagation.
Wavelength in a waveguide It is known from Plane Wave tutorial that the wavelength of a plane wave is
strictly related to the wave frequency. The wavelength in a waveguide is considered as a wavelength in a
direction of wave propagation and its dependence on wave frequency is defined as follows:
0 is a wavelength in a free space at a given frequency and λc stands for the cutoff wavelength for a given
waveguide dimensions and waveguide mode.
UNIT-II
WAVEGUIDE COMPONENTS
Contents:
 Scattering Matrix - Significance, Formulation and properties

 Wave guide multiport junctions -E plane and H plane Tees, Magic Tee
 2-hole Directional coupler
 S Matrix calculations for E plane and H plane Tees, Magic Tee, Directional coupler,
 Ferrite components - Gyrator, Isolator, Circulator, Illustrative Problems.
SCATTERING PARAMETERS
 Linear two-port (and multi-port) networks are characterized by a number of

equivalent circuit parameters, such as their transfer matrix, impedance matrix,
admittance matrix, and scattering matrix. Fig. shows a typical two-port network.
 The transfer matrix, also known as the ABCD matrix, relates the voltage and
current at port 1 to those at port 2, whereas the impedance matrix relates the two
voltages V1,V2 to the two currents I1, I2.
 Thus, the transfer and impedance matrices are the 2×2 matrices:
 The admittance matrix is simply the inverse of the impedance matrix, Y = Z−1.
The scattering matrix relates the outgoing waves b1, b2 to the incoming waves a1,
a2 that are incident on the two-port:
 The matrix elements S11, S12, S21, S22 are referred to as the scattering
parameters or the S- parameters. The parameters S11, S22 have the meaning of
reflection coefficients, and S21, S12, the meaning of transmission coefficients.
S- THE SCATTERING MATRIX
 The scattering matrix is defined as the relationship between the forward and
backward moving waves. For a two-port network, like any other set of two-port
parameters, the scattering matrix is a 2| matrix.
PROPERTIES OF SMATRIX:
In general the scattering parameters are complex quantities having the following
Properties:
Property (1)
 When any Z port is perfectly matched to the junction, then there are no reflections
from that S = 0. If all the ports are perfectly matched, then the leading diagonal II
elements will all be zero.
Property (2)
 Symmetric Property of S-matrix: If a microwave junction satisfies
reciprocity condition and if there are no active devices, then S parameters
are equal to their corresponding transposes.
i.e., Sij=Sji
Property (3)
 Unitary property for a lossless junction - This property states that for any lossless
network, the sum of the products of each term of anyone row or anyone column of
the [SJ matrix with its complex conjugate is unity
Property (4)
Phase - Shift Property:
 Complex S-parameters of a network are defined with respect to the positions of the
port or reference planes. For a two-port network with unprimed reference planes 1
and 2 as shown in figure 4.6, the S- parameters have definite values.
WAVEGUIDE MULTIPORT JUNCTIONS:
T-JUNCTION POWER DIVIDER USING WAVEGUIDE:
 The T-junction power divider is a 3-port network that can be constructed either
from a transmission line or from the waveguide depending upon the frequency of
operation.
For very high frequency, power divider using waveguide is of 4 types

 H-Plane Tee
 E-Plane Tee
 E-H Plane Tee/Magic Tee
 Rat Race Tee
H-Plane Tee
An H-Plane Tee junction is designed by bestowing a simple waveguide to a

rectangular waveguide which previously has two ports. The arms of rectangular
waveguides make two ports called collinear ports i.e., Port1 and Port2, while the new one,
Port3 is called as Side arm or H-arm. This H-plane Tee is also called as Shunt Tee.
As the axis of the side arm is similar to the magnetic field, this junction is called H-
Plane Tee junction. This is also called as Current junction, as the magnetic field splits
itself into arms. The cross-sectional details of H-plane tee can be agreed by the resulting
figure.
The following figure shows the connection made by the sidearm to the bi-directional
waveguide to form the serial port.
Properties of H-Plane Tee
The properties of H-Plane Tee can be defined by its [S]3×3matrix.

1.It is a 3×3 matrix as there are 3 possible inputs and 3 possible outputs.
2.Scattering coefficients S13 and S23 are equal here as the junction is symmetrical in plane
3. The port is perfectly matched to the junction.
4.We can say that we have four unknowns, considering the symmetry property.
From the Unitary property
From the Equation 6,

We know that [b] = [s][a]
This is the scattering matrix for H-Plane Tee, which explains its scattering properties.
E-Plane Tee
An E-Plane Tee junction is formed by attaching a simple waveguide to the broader
dimension of a rectangular waveguide, which already has two ports. The arms of
rectangular waveguides make two ports called collinear ports i.e., Port1 and Port2, while
the new one, Port3 is called as Side arm or E-arm. T his E-plane Tee is also called
as Series Tee.
As the axis of the side arm is parallel to the electric field, this junction is called E-
Plane Tee junction. This is also called as Voltage or Series junction. The ports 1 and 2
are 180° out of phase with each other. The cross-sectional details of E-plane tee can be
understood by the following figure. An E-Plane Tee junction is designed by assigning a
simple waveguide to the broader dimension of a rectangular waveguide, which previously
has two ports. The arms of rectangular waveguides create two ports called collinear ports
i.e. Port1 and Port2, while the new one, Port3 is called as Side arm or E-arm. T his E-
plane Tee is also called as Series Tee.
As the axis of the side arm is similar to the electric field, this junction is called E-
Plane Tee junction. This is also called as Voltage or Series junction. The ports 1 and 2 are
180° out of phase with each other. The cross-sectional details of E-plane tee can be
assumed by the resulting figure.
The resulting figure displays the connection made by the sidearm to the bi-directional
waveguide to form the parallel port.
Properties of E-Plane Tee
The properties of E-Plane Tee can be defined by its [S]3x3[S]3x3 matrix.

2.Scattering coefficients S13 and S23 are out of phase by 180° with an input at port 3
3.The port is perfectly matched to the junction.

4.From the symmetric property,
Considering equations 3 & 4, the [S] matrix can be written as,
We can say that we have four unknowns, considering the symmetry property.
5.From the Unitary property
Multiplying we get,
(Noting R as row and C as column)
Equating the equations 6 & 7, we get
From Equation 8,
From Equation 9,
Using the equations 10, 11, and 12 in the equation 6,
we get,
Substituting the values from the above equations in [S][S] matrix,
We get,
We know that [b]= [S][a]
This is the scattering matrix for E-Plane Tee, which explains its scattering properties.
E-H-Plane
The resulting figure shows the assembly made by the side arms to the bi-directional
waveguide to form both parallel and serial ports.
Characteristics of E-H Plane Tee

 If a signal of equal phase and magnitude is sent to port 1 and port 2, then the output at
port 4 is zero and the output at port 3 will be the additive of both the ports 1 and 2.
 If a signal is sent to port 4, (E-arm) then the power is divided between port 1 and 2
equally but in opposite phase, while there would be no output at port 3. Hence, S34 = 0.
 If a signal is fed at port 3, then the power is divided between port 1 and 2 equally, while
there would be no output at port 4. Hence, S43 = 0.
 If a signal is fed at one of the collinear ports, then there appears no output at the other
collinear port, as the E-arm produces a phase delay and the H-arm produces a phase
advance. So, S12 = S21 = 0.
Properties of E-H Plane Tee
The properties of E-H Plane Tee can be defined by its [S]4×4matrix.

2.As it has H-Plane Tee section As it has H-Plane Tee section
3.As it has E-Plane Tee section
4.The E-Arm port and H-Arm port are so isolated that the other won't deliver an output, if
an input is applied at one of them. Hence, this can be noted as
5.From the symmetry property, we have
6.If the ports 3 and 4 are perfectly matched to the junction, then
Substituting all the above equations in equation 1, to obtain the [S][S] matrix,
7.From Unitary property, [S][S]∗=[I]

From the equations 10 and 11, we get
Comparing the equations 8 and 9, we have
Using these values from the equations 12 and 13, we get
From equation 9, we get
S22 = 0 ………Equation 16
Now we understand that ports 1 and 2 are perfectly matched to the junction. As this is a 4
port junction, whenever two ports are perfectly matched, the other two ports are also
perfectly matched to the junction.
The junction where all the four ports are perfectly matched is called as Magic Tee
Junction.
By substituting the equations from 12 to 16, in the [S][S] matrix of equation 7, we obtain
the scattering matrix of Magic Tee as
We already know that, [b] = [S][a]

Rewriting the above, we get
Applications of E-H Plane Tee
Some of the greatest mutual applications of E-H Plane Tee are as follows :
 E-H Plane junction is used to amount the impedance − A null detector is linked to E-
Arm port while the Microwave source is linked to H-Arm port. The collinear ports
composed with these ports make a bridge and the impedance measurement is done by
balancing the bridge.
 E-H Plane Tee is used as a duplexer − A duplexer is a circuit which mechanisms as
both the transmitter and the receiver, by means of a single antenna for both drives. Port
1 and 2 are used as receiver and transmitter where they are inaccessible and hence will
not interfere. Antenna is connected to E-Arm port. A matched load is connected to H-
Arm port, which provides no reflections. Currently, there exists transmission or
reception without any problem.
 E-H Plane Tee is used as a mixer − E-Arm port is connected with antenna and the H-
Arm port is connected with local oscillator. Port 2 has a matched load which has no
reflections and port 1 has the mixer circuit, which gets half of the signal power and half
of the oscillator power to produce IF frequency.
 In addition to the above applications, an E-H Plane Tee junction is also used as
Microwave bridge, Microwave discriminator, etc.
 If we need to association two signals with no phase modification and to avoid the
signals with a path difference then we need microwave device.
A usual three-port Tee junction is taken and a fourth port is added to it, to make it a
ratrace junction. All of these ports are linked in angular ring forms at equal intervals
using series or parallel junctions.
 The mean circumference of total race is 1.5λ and each of the four ports is detached by a
distance of λ/4. The resulting figure shows the image of a Rat-race junction.
Let us study a few cases to appreciate the operation of a Rat-race junction.

Case 1
If the input power is applied at port 1, it gets similarly split into two ports, but in
clockwise direction for port 2 and anti-clockwise direction for port 4. Port 3 has
unconditionally no output.The reason being, at ports 2 and 4, the powers combine in
phase, whereas at port 3, cancellation occurs due to λ/2 path difference.
Case 2
If the input power is applied at port 3, the power gets similarly separated between
port 2 and port 4. But there will be no output at port 1.
Case 3
If two unequal signals are applied at port 1 itself, then the output will be relative to
the sum of the two input signals, which is separated between port 2 and 4. Now at port 3,
the differential output appears.
The Scattering Matrix for Rat-race junction is represented as
Applications:
Rat-race junction is used for uniting two signals and separating a signal into two halves.
Directional coupler
 A Directional coupler is a device that trials a minor amount of Microwave power

for measurement tenacities. The power measurements comprise incident power,
reflected power, VSWR values, etc.
 Directional Coupler is a 4-port waveguide junction comprising of a primary main

waveguide and a secondary supporting waveguide. The resulting figure shows the
image of a directional coupler.
 Directional coupler is used to couple the Microwave power which may be

unidirectional or bi-directional.
Properties of Directional Couplers:
The properties of an ideal directional coupler are as follows.

 All the finishes are matched to the ports.
 When the power travels from Port 1 to Port 2, some portion of it gets coupled to Port 4
but not to Port 3.
 As it is also a bi-directional coupler, when the power travels from Port 2 to Port 1, some
portion of it gets coupled to Port 3 but not to Port 4.
 If the power is incident through Port 3, a portion of it is coupled to Port 2, but not to
Port 1.
 If the power is incident through Port 4, a portion of it is coupled to Port 1, but not to
Port 2.
 Port 1 and 3 are decoupled as are Port 2 and Port 4.
 Preferably, the output of Port 3 should be zero. Though, almost, a small amount of
power called back power is practical at Port 3. The resulting figure specifies the power
flow in a directional coupler.
Where
 Pi = Incident power at Port 1
 Pr = Received power at Port 2
 Pf= Forward coupled power at Port 4
 Pb = Back power at Port 3
Resulting are the parameters used to define the performance of a directional coupler.
Coupling Factor (C)

The Coupling factor of a directional coupler is the ratio of incident power to the forward
power, measured in dB.
Directivity (D)
The Directivity of a directional coupler is the ratio of forward power to the back power,
measured in dB.
Isolation
It defines the directive properties of a directional coupler. It is the ratio of incident power
to the back power, measured in dB.
Isolation in dB = Coupling factor + Directivity
Two-Hole Directional Coupler

This is a directional coupler with same main and auxiliary waveguides, but with two
small holes that are common between them. These holes are λg/4 distance apart where λg
is the guide wavelength. The following figure shows the image of a two-hole directional
coupler.
A two-hole directional coupler is planned to see the ideal condition of directional

coupler, which is to evade back power. Some of the power while travelling between Port 1
and Port 2, escapes through the holes 1 and 2.
The greatness of the power depends upon the dimensions of the holes. This leakage
power at both the holes are in phase at hole 2, adding up the power causal to the forward
power Pf. Though, it is out of phase at hole 1, stopping each other and stopping the back
power to occur. Therefore, the directivity of a directional coupler improves. The general S
matrix of a directional coupler is,
1.Since all ports in a directional coupler are matched.
S11 = S22 = S33 = S44 = 0 ----------------- (2)
2.Since there is no coupling between ports 1 & 3 and ports 2 & 4
S13 = S31 = S24 = S42 = 0 ------------- (3)
Apply equation (2) & (3) in (1)
3.By unitary property, [S][S]* = I
R1C1 => |S12|2 + |S14|2 = 1 ------------ (4)

R2C2 => |S12|2 + |S23|2 = 1 ------------ (5)
R3C3 => |S23|2 + |S34|2 = 1 ------------ (6)
R1C3 => S12 S23* + S14 S34* = 0 ----------- (7)
Comparing equations (4) and (5)

|S12|2 + |S14|2 = |S12|2 + |S23|2
S14 = S23 --------------- (8)
Comparing equations (5) and (6)
|S12|2 + |S23|2 = |S34|2 + |S23|2

S12 = S34 --------------- (9)
Let, S12 be real and positive,

i.e, S12 = S34 = p --------------- (10)
applying equation (10) in (7)
Therefore, p S23* + S14 p = 0

p [S23* + S14] = 0
p [S23* + S23] = 0
S23* + S23 = 0
To satisfy the above condition, S23 should be a complex value.
Let S23 = jq
Therefore, the S matrix of directional coupler is,
Ferrite components:
Introduction to ferrites:
A ferrite is a nonmetallic material (though often an iron oxide compound) which is an

insulator, but with magnetic properties similar to those of ferrous metals. Among the more
common ferrites are manganese ferrite (MnFe2O3), zinc ferrite (ZnFe2O3) and associated
ferromagnetic oxides such as yttrium-iron-garnet [Y3Fe2(FeO4)3], or YIG for short.
(Gamets are vitreous mineral substances of various colors and composition, several of
them being quite valuable as gems.) Since all these materials are insulators,
electromagnetic waves can propagate in them. Because the ferrites have strong magnetic
properties, external magnetic fields can be applied to them with several interesting results,
including the Faraday rotation mentioned in connection with wave propagation.
When electromagnetic waves travel through a ferrite, they produce an RF magnetic field
in the material, at right angles to the direction of propagation if the mode of propagation is
correctly chosen. If an axial magnetic field from a permanent magnet is applied as well, a
complex interaction takes place in the ferrite. The situation may be somewhat simplified if
weak and strong interactions are considered separately.
Gyrator:
Operation
● When a wave enters port 1 its plane of polarization rotates by 90º because of the twist in the
waveguide.
● It again undergoes faraday rotation through 90º because of the ferrite rod and the wave which
comes out of port 2 will have a phase shift of 180º compared to the wave entering at port 1.
● When the same wave enters at port 2, it undergoes faraday rotation through 90º in the same
direction.
● Because of the twist this wave gets rotated back by 90º comes out of port 1 with 0º phase shift.
Isolators:
● An isolator is a 2-port device which provides a very small amount of attenuation for transmission
from port 1 to port 2 but provides maximum attenuation for transmission from port 2 to port 1.
● This requirement is very much desirable when we want to match a source with a variable load.
● In most microwave generators, the output amplitude and frequency tend to fluctuate very significantly
with changes in load impedance.
● Due to mismatch of generator output to the load resulting in reflected wave from load.
● These reflection will cause amplitude and frequency instabilities of the microwave generator.
● When the isolator is inserted between generator and load, the generator is coupled to the load with
zero attenuation and if any reflection from the load is completely absorbed by the isolator without
affecting the generator output.
Construction
● Isolator makes use of 45º twisted rectangular waveguide and 45º faraday rotation ferrite rod.
● A resistive card is placed along the larger dimension of the rectangular waveguide, so as to absorb
any wave whose plane of polarization is parallel to the plane of resistive card.
● The resistive card does not absorb any wave whose plane of polarization is perpendicular to the
plane of its own.
● Then the wave gets rotated by 45º in clockwise direction due to ferrite rod and
rotated by another 45º due to the twist in the waveguide.
● Now the plane of polarization of the wave is parallel with the plane of resistive card
and hence the wave will be completely absorbed by the resistive card and the output
at port 1 will be zero.
● This power is dissipated in the card as a heat.
● In practice 20 to 30 dB isolation is obtained for transmission from port 2 to port 1.
Circulator:
● This power passes port 4 unaffected and gets rotated by 45º due to ferrite rod
in the clockwise direction. And now totally plane of polarization is tilted
through 90º finds port 3 suitably aligned and emerges out of it.
● Similarly port 3 in coupled only to port 4 and port 4 to port 1.

UNIT III
Linear beam Tubes
Contents:
 Limitations and losses of conventional tubes at microwave frequencies

 Classification of Microwave tubes
 type tubes – 2 cavity klystron
 structure
 velocity modulation process and Applegate diagram
 bunching process
 small signal theory Expressions for o/p power
 efficiency,
 Reflex Klystrons-
 Structure
 Velocity Modulation
 Applegate diagram
 Power output
 Efficiency.
Unit-V Microwave Engineering
UNIT-V
MICROWAVE TUBES
Limitations and losses of conventional Tubes at Microwave Frequencies
Conventional vacuum triodes, tetrodes and pentodes are less useful signal sources
at frequencies above 1 G Hz because of
 lead inductance
 Inter-electrode capacitance effects,
 Transit angle effects
 Gain bandwidth product limitations.
 Power losses
Lead inductance and inter-electrode capacitance effects
At frequencies above 1 GHz conventional vacuum tubes are impaired by parasitic

circuit reactance because the circuit capacitances between tube electrodes and the
circuit inductance of the lead wire are too large for a microwave resonant circuit.
Further as the frequency increases the real part of the input admittance may be large
enough to cause a serious over load of the input circuit and thereby reduce the
operating efficiency of the tube.
Transit angle effects
Another limitation in the application of conventional tubes at microwave frequencies

is the electron transit angle between electrodes. The electron transit angle is defines
as
Θg = ω  =
ωd
𝑣𝑜
Where  =
d
𝑣𝑜
is the transit time across the gap
d = separation between cathode and grid
𝑣𝑜 = Velocity of the electron 0.593 x 105 𝑉𝑜
Vo = DC voltage
When frequencies are below microwave range, the transit angle is negligible. At
microwave frequencies, however the transit time is large compared to the period of
the microwave signal, and the potential between the cathode and the grid may
alternate from 10 to 100 times during the electron transit. The grid potential during
the negative half cycle thus removes energy that was given to the electron during the
positive half cycle. Consequently, the electrons may oscillate back and forth in the
cathode-grid space or return to the cathode. The overall result of transit angle effects
Department of ECE, CMR College of Engineering & Technology Page 1

is to reduce the operating efficiency of the vacuum tube. The degenerate effect
becomes more serious when frequencies are well above 1 GHz.
Gain bandwidth product limitations
The gain-bandwidth product is independent of frequency. For a given tube, a higher
gain can be achieved only at the expense of a narrower bandwidth. This restriction is
applicable to a resonant circuit only. In microwave devices either reentrant cavities or
slow-wave structures are used to obtain a possible overall high gain over a
bandwidth.
Power losses
The use of conventional tubes at higher frequencies also increases in power losses
resulting from skin effect, I2R losses resulting from capacitance charging currents,
losses due to radiation from the circuit and dielectric losses.
Classification of Microwave tubes.
Microwave Tubes
O-Type Tubes M-Type Tubes

(Linear beam tubes) (Cross field tubes)

Energy Transfer Mechanism
In most of the microwave tubes, the signal is placed in a cavity gap and electrons are
forced to cross the gap at time when they face maximum opposition. Crosssing the
gap under opposition lead to transfer of energy to the cavity gap signal. When the
gap voltage is sinusoidal time-varying and the charge corssing is continuous and
uniform, which is usually the case, no net transfer of energy takes place between
cavity and the charge crossing the gap. It is because the energy transfer is equal
and opposite in direction during a half cycle when compalred to previous half cycle
resulting in no net transfer of energy in a cycle. To have net energy transfer,
preferabley maximum, from electron beam to gap signal voltage the disributed
charge is compressed into a thin sheet or bunch, so that it requires less time to cross
the gap and it is arranged such hat the bunch corssing is at peak gap voltage so that
the bunch faces maximum opposition and retardation from the signal voltage.
When the gap voltage is simusoidal and bunch corssing is at a uniform and constant
rate, for maximum unidirectional flow of energy, there is only one instant, either at
positive peak or negative peak, for the bunch to cross the gap. The bunch crossing
hence mus be once per cycle of the gap voltage. In cse of bunch corssing at a
uniform rate of f, transfer of maximum energy can take place only with a a
component of grid gap field whose frequency is also f. Other components of the grid
gap voltge like 2f, 4f, 8f, ets., do not involve in the energy transfer, whereas the
components 3f, 5f, 6f, etc., and f/2, f/3. f/4, etc., the transfered amount of energy is
negligible.
Two Cavity Klystron
The two-cavity klystron is a widely used microwave amplifier operated by the

principles of velocity and current modulatin. It consists of an elctron gun, focussing
and accelerating grids, two identical cavities separated by a distance and at the far
end a gounded collector plaate. The elctron gun emits electrons from the surace of its
cathode and then they are focussed into a bearm. Using a dc accelerating positive
voltage the beam is accelerated to high velocities.
Characteristics of two cavity klystron
Efficiency: about 40%

Power output in CW mode: upto 500 kW at 10 GHz
Power output in Pusled mode: upto 30 MW at 10 GHz
Power gain: about 30 dB

Fig 5.1 Scematic diagram of two cavity klystron
Components of two cavity klystron
1. Cathode: Source of electrons

2. Anode: for formation of electron beam
3. Bucher Cavity: A reentrat type resonator cavity which is kept at a +ve voltage
of Vo w.r.t. cathode to effect acceleration of electrons. RF input voltage of
V1 Sin ωt is applied to buncher cavity.
4. Catcher cavity: Similar to buncher cavity. The amplified output signal
V2 Sin ωt is obtained from this cavity.
5. Collector: The elctrons after transfer of enerty to catcher cavity are collected
by the collector.
Let us define varous parameters used in the description and operation of two cavity
klystron.
Vo = DC voltage between cathode and buncher cavity.

V1 = Amplitude of input RF signal, V1<< Vo
ω = 2πf = Input signal angular frequency. It is also equal to resonant frequency of
both the cavities.
v o = Uniform velocity of electrons between cathode and buncher cavity.
to = Time at which electrons enter the buncher cavity

t1 = Time at which electrons leave the buncher cavity
 = Transit time of electrons in the buncher cavity = t1 - to

θg = Angle /Phase vaiation of input signal during the tansit time = ωŤ

β = Beam Coupling Coefficient of the buncher / Catcher Cavity
When the electrons enter the buncher cavity with uniform velocity „ v0 ‟ interact with
the field due to input RF signal V1sin ωt. The time varying field in the cavity cause the
electrons to accelerate or decelerate and there by electrons undergo velocity
modulation.
Let v(t1) = Velocity of electrons at t= t1 at the output of buncher cavity

This is a time varying quantity
Refer fig-5.3 for velocity modulation of electrons
Let d = cavity with of buncher / catcher cavity
L = spacing between buncher and catcher cavities
* „L‟ is the design parameter for optimum performance of the klystron amplifier
t2 = Time at which electrons enter the catcher cavity
t3= Time at which electrons leave the catcher cavity
d
  t1  t0 (5.2)
vo
Because V1<<V0
Evaluation of v(t1)
v(t1) is the instantaneous velocity of electrons which is a time varying quantity and
primarily depends upon the average voltage in the gap during the time „  ‟ i.e. during
the time period (transit) the electrons are influenced by the field.
Vavg = Average voltage in the gap during time „  ‟

t1
1
Vavg 
 V sin t dt
t0
1
 V1
= cos t tt 1
 0
 V1
Vavg  cos t1  cos t0  Vavg 
V1
cos t o  cos t1 
 = 
Where  = t1- t0
d
t1 = t 0 +  = t 0 +
vo
V1   d 
Vavg  cos t 0  cos t 0  
   v0 
d
Where θg =   = (5.3)
v0
Vavg 
V1

cos t 0  cos(t0   g ) 
g
Let A = ωt0 +
2
g
and B=
2
Since cos (A-B) – cos (A+B) = 2 sin A sin B
 sin(d / 2v0 )   d 
Vavg  V1   sin t 0  
 d / 2v0   2v0 
sin  g / 2
  
= V1 sin  t0  g 
g / 2  2
βi = beam coupling coefficient of input (buncher) cavity by definition
sin  g / 2
βi =
g / 2
(5.4)
  
Vavg  V1i sin t0  g 
 2 
2eV0
As we have seen earlier v0 
m
2e   
|||ly v(t1) =  . V1i sin  t0  g   V0
m  2 
2e   iV1   g 
 V0 1  sin t 0  
m  V0  2 

 iV1
Since V1<<V0, <<1
V0
x
Using binomial expansion 1 x  1 for x  1
2
 V   g 
v(t 1 )  v0 1  i 1 sin t 0  
 2V0  2 
Since  = t1-t0
θ g =   =  t1 -  t0
 t0 =  t1+  t0
 t0+ θg /2 =  t1 - θg+ θg / 2 =  t1- θg /2
 V  g 
v(t1 )  v0 1  i 1 sin wt1  
 2V0  2  (5.5)
 V  g 
v(t1 )  v0 1  i 1 sin wt0  
 2V0  2  (5.6)
Numerical : The parameters of a 2 cavity klystron are
v0 = 1000 V, I0 = 25 mA(beam current)
d = 1mm, f = 3 GHz
Find out βi beam coupling coefficient
Solution v0  0.593  106 V0  0.593  106  1000
= 1.88 x 107 m/s
d 2  3 109 103
g    1.002 rad
v0 1.88 107
sin  g 2 sin 0.5

i    0.958
g 2 0.5
Bunching Process of Electrons
All the electrons in the beam will drift with a uniform velocity of “ v0 ”at t =t0 i.e. at time
of entry into the buncher cavity. For t2 > t > t0 i.e. in the cavity gap the velocity of
electrons vary with time depending upon the instantaneous field V1sinwt

Fig 5.2: Bunching process in 2-cavity klystron

Consider three arbitrary electrons a, b and c passing thro the gap when the field is –
ve max, zero and +ve max respectively at time instances ta, tb and tc.

Fig 5.3 : Appligate diagram
Velocity of electron „b‟ = vb = v0 (field zero)
Velocity of electron „a‟ = va < v0 = vmin (-ve field)
Velocity of electron „c‟ = vc > v0 = v0 = vmax (+ve field)
Let us consider that these three electrons draft with different velocities and
meet (bunch) together at t = td at a length ∆L from buncher cavity.
∆L= vmin (td-ta) (5.7)
∆L= v0 (td-tb) (5.8)
∆L= vmax (td-tc) (5.9)
tc-tb = tb-ta= π / 2w (1/4 of time period) (5.10)
∆L= vmin (td - ta) = vmin (td - tb +π/2ω) (5.7A)
∆L= vmax (td - tc) = vmax (td - tb –π/2ω) (5.8A)
 V  g 
We have v(t1 )  v0 1  i 1 sin t0  
 2V0  2 
From above equation
 V 
vmax  v(t1 )  v0 1  i 1 
 2V0 
(5.11)

 V 
vmin  v(t1 )  v0 1  i 1 
 2V0 
(5.12)
Substituting equation 12, 11 in equation 7A and 8A
  v V v V  
∆L = v0 (td t b )  v0  0 i 1 (td  tb )  0 i 1 
 2 2V0 2V0 2 
(5.13)
  v0 iV1 v V  
∆L = v0 (td t b )   v0  (td  tb )  0 i 1 
 2 2V0 2V0 2 
(5.14)
Subtracting Eqn 5.14 from Eqn 5.13
 V V 
v0  v0 i 1 (td t b )  v0 i 1 0
2 2V0 2V0 2
v0 iV1  V 
(td t b )  v0 1  v0 i 1
2V0 2 2V0 2
v0 iV1   iV1  v0

(td t b )  v0 1  
2V0 2  2V0  2
 iV1
sin ce  1
2V0
V0
td t b 
wiV1 (5.15)
From Equation 5.8 and 5.15
V0
L  v0
wiV1 (5.16)
∆L is theoretical value of distance from buncher cavity at which bunching of electrons

takes place. Refer Fig -5.1
Equation 5.16 gives the design parameter for spacing between buncher and catcher
cavities.
However equation – 5.16 is only an approximation, because mutual repulsive force

between the electrons in the highly densed beam are not taken into consideration. It

will be seen later that optimum spacing between the two cavities “L” optimum is given
by (for maximum degree of bunching)
3.682v0V0
Loptimum 
 iV1
Which is closer to equation – 5.16
(For derivation refer equation – 5.28)
Let T= Transit time for on electron travel distance „L‟ (function of „t‟)
L = spacing between two cavities
Let T0 = Transit time for electron when the field in buncher cavity is i.e. v (t1) = v0
L
T0 
v0 (5.18)
L
T
v(t1 )
Substituting for v(t1 ) from equation 5
L
T
 V   
v0 1  i 1 sin  t1  g 
 2V0  2 
1
L  V   
T  1  i 1 sin t1  g 
v0  2V0  2 
Using binomial expansion (1+x)-1= 1-x for x<<1 and V1<<V0, T0 =L / v0
 V   
T  T0 1  i 1 sin t1  g 
 2V0  2  (5.19)
Multiplying above equation by „ω‟
 iV1   
T  T0 1  sin t1  g 
 V0  2  (5.20)
Let θ0 = Angular variation in the signal during time „T 0‟
θ0 = ωT0

T0  iV1  g 
T  T0  sin  t1  
V0  2 
g
T   0  X sin t1 
2
 iV1
where X  0
2V0 (5.21)
X is called Bunching parameter of Klystron
The second design criterion is that the maximum energy will be transferred by the
electrons to the catcher cavity when the bunch enters the cavity while the field is at
negative peak. Assuming the buncher and catcher cavities are at same phase the
above condition can be expressed mathematically
θ0 = ωT0 = 2πn – π/2 = 2πN (5.21A)
Where n is an integer and N is number cycles the angle has undergone

chages during the transit time T0
Expression for output current
Let us try to establish the relation between I0 = dc current passing through buncher
vacity and „i2‟ ac current in the catcher cavity.
Making use of law of conservation
Let charge „dQ0‟ pass through the buncher gap at a time interval „dt 0‟ and we will
assume the same amount of charge passes through the catcher gap later in time
interval „dt2‟
dQ0 = I0 dt0
dQ0  I 0 dt 0  i2 dt 2
(5.22)
We have earlier defined t0, t1, t2 such that
 =t1 – t0
t1 = t0+ Ť
T= t2-t1, T= t2-(t0+ Ť)
From equation 19

 V   
T  t2  t1  T0 1  i 1 sin t1  g 
 2V0  2 
 V  g 
t 2  t 0    T0 1  i 1 sin t1  
 2V0  2 
Multiplying by „ω‟
  iV1  g 
t 2  t 0    T0 1  sin t1  
 2V0  2 
0 iV1   
t2  t0   g  0  sin t0  g 
2V0  2 
 0  iV1
we have X 
V0
 g 
t2  t0   g  0  X sin t0  
 2 
Differentially above equation w.r.t. „t0‟
θg, θ0 are constants w.r.t. „t‟
dt 2  g 
    X cos t 0  and
dt 0  2 
   
dt2  dt0 1  X cos t0  g 
  2 
(5.23)
From equation 22 and 23
   
I 0 dt0   i2 dt2  i2 dt0 1  X cos t0  g 
  2 
I0
i2 (t0 ) 
  
1  X cos t0  g 
 2  (5.24)
2 1
i2, the beam current at catcher cavity is a periodic waveform of  ,
 f
period about dc current I0


i2  I 0   2 I 0  0 J n () cos n (t 2    T0 )
n1 (5.25)
Where n = integer
Derivations of above equation is out of preview of the syllabus
Jn(x) = nth order bessel function of 1st kind
We are interested in the fundamental component i.e. n=1, ac beam current
Neglecting dc current and higher order of ac current i.e. n>2
If = fundamental component of ac current from equation 25 in catcher cavity whose

beam complex coefficient = β0
I f  2I 0 J1 ( X )0 cos w (t2    T0 )

(5.26)
Let Ifmax= magnitude of If in catcher cavity
I 2  20 I 0 J1 ( X ) (5.27)
Fig 5.4: Bessel function Jn (nX)
J1(X) is maximum at X = 1.841 i.e. J1(1.841) = 0.582 from Bessel function
Where X = Bunching parameter of Klystron as defined in equation 21
 iV1  iV1 L
X  0  w
2V0 2V0 v0

L → Loptimum as X → 1.841
2  1.841  V0  0 3.682 0V0

Loptimum  
 iV1  iV1 (5.28)
The same equation is given theoretically as equation 5.17 earlier
The Output power and beam loading
Let I2 is max value of current in the catcher cavity with β=β0
From equation 5.27
I2 = 2β0I0J1(X) (5.29)
Power Output and efficiency of Klystron
The equivalent output circuit of Klystron is
Fig 5.5 : Output equivalent circuit
Where Rsho = Wall resistance of catcher cavity

RB = beam loading resistance
RL = External load resistance
Rsh = Effective shunt resistance = Rsho || RB || RL
if I 2I  J ( X )
irms  max  2  0 0 1
2 2 2
Poutput  i 2 rms Rsh  2I 0  0 J 1 ( X ) Rsh   0 I 0 J 1 ( X )V2

2 2 2
(5.29A)
max imum output voltage  V2  i f rms Rsh  2 0 I 0 J1 ( X ) Rsh

(5.30)
2 I  J ( X ) Rsh
2 2 2
P0
Efficiency     0 0 1
pdc V0 I 0

0 I 0 J1 ( X )V2 V2
   0 J1 ( X )
V0 I 0 V0 (5.31)
Maximum theoretical efficiency of Klystron is
β0 =1, J1(X)=0.582, V2=V0
ηmax = 58.2 % theoretical
Practically η ≈ 40%
Condition for maximum transfer of energy to catcher cavity
From equation 5.21A we have θ0 = ωT0 = 2πn – π/2 = 2πN and from equation 5.21
 iV1  iV1
X  o  2N
2V0 2V0
V1 2 X 1.841 1.841
( )max= = (5.32)
V0 2N N
Mutual Conductance ‘Gm’

𝐼2 2 𝐼𝑂 𝛽 𝑖 𝐽 1 𝑋
Gm = = (5.33)
𝑉1 𝑉1
From equation 5.21 we have

𝛽𝑖 𝑉1 𝜃 𝑜 𝛽 𝑖 𝑉1 𝜔𝐿
X= =
2𝑉𝑜 2𝑉𝑜 𝑣𝑜
2 𝑣𝑂 𝑉𝑜 𝑋
V1= (5.34)
𝜔𝛽 𝑖 𝐿
Substituting V1 in equation 5.33

2 𝐼𝑂 𝛽 𝑜 𝐽 1 𝑋
Gm = ω 𝛽𝑖 L
2𝑣𝑜 𝑉𝑜 𝑋
Let βi = βo = β
𝛽 2𝜔 𝐿 𝐽 1 𝑋 𝐼𝑂
Gm = (5.35)
𝑣𝑜 𝑋 𝑉𝑜
Let Ro be the dc beam resistance of buncher cavity.
Let Go be the dc beam conductance of buncher cavity.

𝐼𝑂 𝑉𝑂
Go = and Ro =
𝑉𝑜 𝐼𝑂

𝛽 2𝜔 𝐿 𝐽 1 𝑋
Gm = Go (5.36)
𝑣𝑜 𝑋
Gm 𝛽 2𝜔 𝐿 𝐽1 𝑋
= (5.37)
Go 𝑣𝑜 𝑋
Gm
The maximum value of is obtained by J1(X) = 0.582 for X – 1.841 and β = 1
Go
Gm 0.316𝜔 𝐿
max= (5.38)
Go 𝑣𝑜
Voltage gain Av:
𝑉2
Av = substituting for V2 from equation 5.30
𝑉1
𝑉2 2 𝛽 𝑜 𝐼𝑜 𝐽 1 𝑋 𝑅𝑠ℎ
Av = =
𝑉1 𝑉1
substituting for V1from equation 5.34, and taking βi = βo = β
𝛽 𝑜 𝐼𝑜 𝐽 1 𝑋 𝑅𝑠ℎ
Av = ω 𝛽𝑖 L (5.39)
𝑣𝑜 𝑉𝑜 𝑋
ω𝛽 𝑖 L
Since = 𝜃𝑜
𝑣𝑜
𝛽 2 𝜃𝑜 𝐽 1 𝑋 𝐼𝑂
Av = 𝑅𝑠ℎ (5.40)
𝑋 𝑉𝑜
Substituting for Gm from equation 5.35
Av = Gm 𝑅𝑠ℎ (5.41)
Multi Cavity Klystron
 Typical gain of 2-cavity klystron is 30 dB. This gain is not adequate in many
applications
 In order to achieve higher gain, several two cavity resonant tubes are connected
in cascade in which output of each of the tubes is fed as input to the following
tube.

 The intermediate cavities are place at a distance so that the bunching parameter
X = 1.841 with respect to the previous cavity.
 The intermediate cavity acts as a buncher with the passing electron beam
inducing a more enhanced RF voltage than the previous cavity, which in turn sets
up an increased velocity modulation.
 Typical gain achievable by a multi cavity klystron is of the order of 50 dB with
bandwidth of about 80 M Hz.
 A multi cavity klystron amplifier produces high gain and narrow bandwidth if all the
cavities are tuned to the same frequency.
 When each of the cavities are tuned to slightly different frequencies (Staggered
tuning), the bandwidth will appreciably increase but at the cost of the gain.
Schematic diagram of a 4 –cavity klystron
Beam current density in klystrons and plasma frequency
While carrying out the mathematical analysis of 2-cavity klystron earlier, the space
charge effect (mutual repulsive forces between the electrons) was neglected. This is
acceptable for a low power amplifier with small density of electrons in the beam.
However, when high power klystron tubes are analysed, the electron density in the
beam is large and forces of mutual repulsion of electrons cannot be neglected.

When the electrons perturbate (oscillate) in the electron beam, the electron density
consists of a dc part t RF puturbation caused by the electron bunches. The space
change forces within electron bunch vary with shape and size of an electron beam.
Mathematically, the charge density and velocities of perturbations are given bye
Charge density = ρ = - B cos (βez) cos (wqt+ θ) (5.42)
Velocity perturbation = v = - C sin (βez) sin (wqt+ θ) (5.43)
Where
B = constant of charge perturbation

C= constant of velocity perturbation
βe = ω / v0 = is the dc – phase constant of electron beam
ωp = Plasma frequency e 0
p 
0 m (5.44)
ωq = R. ωp is the reduced plasma frequency

θ = phase angle of oscillation
ρ0 = dc electron charge density
R = Reduction factor
v0= dc electron velocity
ρ = Instantaneous RF charge density
2- cavity klystron as on oscillator
 An amplifier can be used as on oscillator with appropriate feedback
 The 2-cavity klystron oscillator is obtained by simply providing a feedback loop

between the simply providing a feedback loop between the input and output
cavities of the klystron.
 The condition for sustained oscillations is

    2n rad
2 (5.45)
Where
θ = Total phase shift in the resonators and the feedback cable

  phase angle between buncher and catcher voltages
2
n = an integer

If the two resonators oscillate in phase i.e. θ = 0

then 
 2n   for max power output
2
 If the resonators are de-funed, the oscillations can be obtained over a wide
range of frequencies
 The frequency stability of oscillator is obtained by

(a) controlling the temperature of resonation
(b) Use of regulated power supplies
Solved problems on 2-cavity Klystron

eg1.The parameters of a two cavity Klystron are: (May 2009)
Input power = 10 mW
Voltage gain = 20 dB
Rsh(Input cavity) = 25 kΩ
Rsh(Output cavity) = 35 kΩ
Load resistance = 40 kΩ
Calculate (a) Input voltage (b) Output voltage (c) Power output
Solution
From input ac equivalent circuit
𝑉12
Pac in =
𝑅𝑠ℎ𝑖𝑛
V1 = 𝑃𝑎𝑐𝑖𝑛 ∗ 𝑅𝑠ℎ𝑖𝑛 = 250 = 15.81 V

𝑉
Av = 20 log 𝑉2 = 20 dB
1
𝑉2 𝑉2
log = 1, = 10, V2 = 158.1 V
𝑉1 𝑉1
𝑉22
Power output = = 1.339 W
𝑅𝐿 ||𝑅𝑠ℎ 𝑜𝑢𝑡
eg2: A 2-cavity Klytron amplifier has following parameters (May 2007)
Vo = 1200 V
Io = 25 mA
Ro = 30 kΩ
f = 10 GHz
d = 1 mm
L = 4 cm
Rsh = 30 kΩ
Calculate (a) Input voltage for max output (b) Voltage gain (c) Klystron efficiency
Solution
3.682v0V0
Loptimum 
 iV1
3.682 𝑣𝑜 𝑉𝑜
∴ V1 =
𝜔 𝛽𝑖 𝐿
v0  0.593  10 6 V0  0.593  10 6  1200
= 0.2054 X 108 m/s
d 2  10  109  10 3
g    3.058rad
v0 2.054  107
sin  g 2 sin 1.529
i    0.653
g 2 1.529
3.682 𝑣𝑜 𝑉𝑜
V1 = X = 55.3 V
𝜔 𝛽𝑖 𝐿
V2  2 0 I 0 J 1 ( X ) Rsh
= 2 X 0.653 X 25 X10-3 X 0.582 X 30 X 103 = 570.069 V
𝑉
Av = 20 log 𝑉2 = 20.26 dB
1
V2
   0 J1 ( X ) 
V0
0.653 𝑋 0.582 𝑋 570.069

= 0.1805 or 18.05%
1200
eg 3: A 2-cavity klystron amplifier is tuned at 3 G Hz. The drift space length is 2

cm and beam current is 25 mA. The Catcher voltage is 0.3 times the beam
voltage and β = 1. Calculate
(a) Power output and efficiency for N = 5.25

(b) Beam voltage, input voltage and output current for N=5.25
Solution
𝜔𝐿
Θo = = 2πN
𝑣𝑜

𝜔𝐿
v0  0.593  10 6 V0 =
2πN
𝜔𝐿
V0 =[ 6
]2 = 371.4 V
πN X 0.593 X 10
V2 = 0.3 V0 = 111.4 V
From Eqn 5.32 we have
V1 1.841
( )max = = 0.11
V0 N
V1 max = 0.11 x 371.4 = 41.46 V
From equation 5.29 Poutput   0 I 0 J 1 ( X )V2

= 25 X 10-3 X 0.582 X 111.4 = 1.62 W
Pout 1.62𝐿
  = 0.174 or 17.4%
V0 I 0 371.4 X 25 X 10−3
eg4: A 2-cavity klystron operates at 5 GHz with a dc voltage of 10 kV and a 2 mm

cavity gap. For a given RF voltage the magnitude of gap voltage is 100 volts
Calculate
(a) Transit angle (b) Velocity of electron leaving the gap
v0  0.593  10 6 10000 = 0.593 X 108 m/s
d
  33.7 X 10-12 s
vo
d 2  5  109  2 x 10 3
g    1.058 rad
v0 v0
sin  g 2
i   0.954
g 2
From equation 5.11 and 5.12 we have
 V   0.954 x100 
vmax  v0 1  i 1   0.593 X 108 1   = 0.5986 x 10 m/s
8
 2V0   2 x10000 

 V   0.954 x100 
vmin  v(t1 )  v0 1  i 1   0.593 X 108 1  8
 =0.59 x 10 m/s
lllly  2V0   2 x10000 
eg 5: : A four cavity klystron amplifier has the following parameters
V0 = 18 kV , I0 = 2.25 A , d = 1 cm
f = 10GHz, V1 = 10V (rms) , βi = β0 = 1
ρ0 = dc electron beam density = 10-8 C/ m3
Determine
1. dc electron velocity ‘υ0’
2. dc electron phase constant ‘βe’
3. plasma frequency ‘ωp’
4. reduced plasma frequency ‘ωq’ for R = 0.5
5. Reduced plasma phase constant ‘βq’
6. Transit time across input gap
Solution
(a) The dc electron velocity is

0  0.593 106 18,000  0.796 108 m/ s
(b) The dc electron phase constant is

 2 10 109
e    7.89 10 2 rad / m
 0 0.796 10 8
(c) The plasma frequency

1/ 2
e 0 1.759  1011  10 8 
p    1.41  107 rad / s
o m  8.854  10 12 
(d) The reduced plasma frequency
ωq = R. ωp = 0.5 x 1.41 x 107 = 0.705 x 107 rad / s
(e) The reduced plasma phase constant
 q 0.705  10 7
q    0.088 rad / m
 0 0.796  108
(f) Transit time across the gap
d 10 2
   0.1256 ns
0 0.796  10 8
Eg 6: A 2-cavity klystron operates at 10 GHz with

V0 = 10 kV , I0 = 3.6 mA , L= 2 cm
Gshout = 20 μ mhos, β = o.92, Rshin = 80 k ohms
Findout
(a) Max voltage gain (b) Max Power gain
Solution
 0  0.593  10 6 10,000  0.593  108 m / s
 L 2  10  109  2 x 10 2
o    21.187 rad
v0 v0
Rshout = 1/ Gshout = 50 k Ohms
For Max Av, J1(X) = 0.582 and x = 1.841, From equation 5.40
𝛽 2 𝜃𝑜 𝐽 1 𝑋 𝐼𝑂 .92 𝑥 .92 𝑥 21.187 𝑥 .582 𝑥 3.6 𝑥 50

Av = 𝑅𝑠ℎ = = 1.020
𝑋 𝑉𝑜 18410
𝟏.𝟎𝟐 𝒙 𝟏.𝟎𝟐 𝒙 𝟖𝟎
Power gain = Av2 Rshin /Rshout = = 1.664
𝟓𝟎
Eg 7 : 2-cavity klystron operates at 4 GHz with V0 = 1 kV , I0 = 22 mA , d= 1

mm, Rshout = 20 μ mhos, L = 3 cm . If the dc beam conductance and catcher
cavity total equivalent conductance are 0.25 x 10-4 mhos and 0.3x 10-4 mhos
respectively
Findout
(a) Beam coupling coefficient
(b) dc transit angle in the drift space
© Input cavity voltage V1 for max V2
(d) Voltge gain and efficiency (neglecting beam loading)
Solution
 0  0.593  10 6 1000  0.188  108 m / s
d 2  4  109  1x 10  3
g    1.336 rad
v0 v0

 L 2  4  109  3x 10 2
o    40.1 rad
v0 v0
3.682 𝑣𝑜 𝑉𝑜
V1 = 𝑋 = 99.05 V considering X= 1.841
𝜔 𝛽𝑖 𝐿
From equation 5.41
𝛽 2 𝜃𝑜 𝐽 1 𝑋 𝐼𝑂 𝛽 2 𝜃𝑜 𝐽 1 𝑋 𝐼𝑂
Av = 𝑅𝑠ℎ = = 7.988
𝑋 𝑉𝑜 𝑋 𝐺𝑠ℎ 𝑉𝑜
V2 = Av V1 = 7.988 x 99.05 = 791.2 V
From equation 5.31
V2
   0 J1 ( X )
V0 Considering J1(X) = 0.582
= 0.4268

REFLEX KLYSTRON
Reflex klystron is a single cavity law power microwave oscillator. The characteristics
of Reflex Klystron are
Power output: 10- 500mw

Frequency range: 1 to 25 GHz
Efficiency: 10-20%
Applications
1. Widely used in the as a source for microwave experiments
2. Local oscillator in microwave receivers
The theory of the 2-cavity klystron can be applied to the analysis of Reflex
klystron with slight modifications
Fig 5.6: Schematic digram of Reflex Klystron
The components of Reflex Klystron are

1. Cathode
2. Anode grid
3. Cavity resonator at potential of +v0 w.r.t cathode
4. Repeller at potential of - vr w.r.t. cathode
Formation of electron beam with uniform velocity v0 up to civility resonator is

similar to that of 2-cavity klystron
v0  0.593 106 V0 m / s
Due to dc voltage in the cavity circuit, RF noise is generated in the cavity. This em
noise field in the cavity get pronounced at cavity resonant frequency and acts as a
small signal microwave voltage source of V1 sin wt.
The electron beam with uniform velocity v0 when enters the cavity undergoes
velocity modulation as in the case of 2-cavity klystron.
Let t0 = time at which electron enters the cavity gap
t1 = time at which electron leave the cavity gap
d = cavity gap
Z = Axis as shown in schematic diagram
Z = 0 at the input gap of cavity
Z = d at the output gap of cavity
Z = L at the reseller
From equation 5 of 2 cavity klystron
  iV1  g 
 (t1 )   0 1  sin wt1  
 2V0  2 
Some electrons are accelerated by the accelerating field (during +ve cycle of RF
field) and enter the repeller space with greater velocity compared to the electrons
with unchanged velocity, some electrons are decelerated by the decelerating field
(during –ve cycle of RF field) and enter repeller space with less velocity
All the electrons entering repeller space are retarded by the repeller which is at a –ve
potential of -vr. All the electrons are turned back and again enter the cavity in a

bunched manner. The bunch re enter the cavity and when field in the cavity is a
retarding field bunches convey kinetic energy to the cavity. The cavity converts this
kinetic energy into electron magnetic energy at the resonant frequency resulting in
the sustained oscillations and therefore the output of the cavity is V 1 sin ωt
Fig 5.7: Applegate diagram of Reflex Klystron

Let „b‟ be the reference electron at t = t2 for our analysis. Electron „b‟ is passing
through the cavity gap while the field is zero (-ve shape) when the electrons
a,b,c… leave the cavity i.e. at z = d, the velocity is given by equation
  iV1  g 
 (t1 )   0 1  sin wt1  
 2V0  2  (5.46)
These electrons are subjected to retarding field due to repeller voltage during the
drift space from z = d to z = L. the retarding field in the drift space is given by
Vr  V0  V1 sin wt
E
L (5.47)
The force equation for an electron in the repeller region is given by
m
d 2z V  V0  V1 sin wt 
 eE  e r
2
dt L
Since V1<<V0, V1<<Vr
m
d 2z V  V0 
 e r
2
dt L (5.48)
Integrating the above equation
Where
K1 = integration constant
t0 = Time at the electron enters the gap
t1 = Time at the electron leave the gap
t2 = Time at the electron re-enters the gap due to retarding field
at t = t1, z = d, v(t1) = dz / dt
K1 = dz/ dt = v(t1)
Integrating the above equation once again
 eV0  Vr 
t t
z
mL t (t  t1 )dt  t v(t1 )dt
1 1

z  e
V0  Vr  (t  t ) 2  v(t )(t  t )  K
1 1 1 2
2mL
At t= t1, z= d
K2 = d
V0  Vr 
z  e (t  t1 ) 2  v(t1 )(t  t1 )  d
2mL (5.49)
At t = t2 electrons returns of cavity after retardation at t = t2, z=d substituting this in

above equation.
 eV0  Vr 
d (t 2  t1 ) 2  v(t1 )(t 2  t1 )  d
2mL
 eV0  Vr 
o (t 2  t1 ) 2  v(t1 )(t 2  t1 )
2mL
Let T be rannd trip transit time = t2-t1
  eV0  Vr  
O  (t 2  t1 )  (t 2  t1 ) 2  v(t1 )
 2mL 
e V0  Vr 
(t 2  t1 )  v(t1 )
2mL (5.50)
2mL
T '  t 2  t1  v(t1 )
eV0  Vr 
 V g 
 T0 ' 1  i i sin wt1  
 2V0 2
2mL
where T0 '  v0
eV0  Vr 
(5.51)
TO‟Is the round trip transit time of electron „b‟ which is learning the cavity at velocity
v(t1) = v0
T‟0 is a function of Vr
ω(t2-t1) = ωT
 iVi  g 
 '  T '  T '0 T ' 0 sin wt1  
2V0  2 
Let ωT0 = θ0, From equation 5.21 we have

Department of ECE, 
CMR
V College of Engineering & Technology Page 31
X ' i i
0 '
2V0
 g 
 '   ' 0  X ' sin wt1  '
 2 
(5.52)
Where X‟ is bunching parameter of Reflex Klystron
Power output and efficiency of Reflex Klystron
In case of 2-cavity klystron, we had seen that the maximum transfer of kinetic energy
to the cavity takes place when the electron bunch enters when the field is –ve peak
Similarly in the case of reflex Klystron, the bunch must enter cavity when the field is
+ve peak. (This is because the direction of electron bunch entering into the cavity is
1800 opposite to that of 2-cavity Klystron)
Considering the above condition we can see from the applegate diagram that the
round trip transit time of reference electron is
 1 
 (t 2  t1 )  T0   n  2  2n   2N
 4 2 (5.53)
When n = 1,2,3……………….
Let N= n-1/4 is called the mode number
Therefore θ0 = 2πN
Applying the same analogy of 2-cavity klystron and using equation 25, the current in
the cavity can be expressed as
 

i2   I 0   2 I 0 J ' n (n ' ) cos  (t 2   0   g (5.54)
n 1
The fundamental component of current in the cavity if at n =1 is

i f    i i2 n1  2 I 0  i J1 (1 ) cos(t 2   0 )
(5.55)
 g   0
Maximum magnitude of fundamental component current in the cavity I 2
I 2  2I 0  i J 1 (1 )
V2 = output voltage of the cavity = V1 (except for the phase difference)
V1  V2  2I 0 i J1 (1 ) Rsh (5.57)

2
 2 I  J (1 ) 
output power  Paz  i .Rsh   0 i 1
2
rms
 Rsh (5.58)
 2 
Pac  2I 2 0  2 i J1 (1 ) Rsh

2
(5.59)
Pac  V1 .I 0  i J 1 (1 ) (5.60)
We have earlier seen that
iV1  iV1  
X1  0   2n  
2V0 2V0  2
V1 2X 1
 (5.61)
V0  
 i  2n  
 2
Pac V1 I 0  i J 1 (1 )
 Power Efficiency    (5.62)
Pdc V0 I 0
V1  i J 1 (1 ) 2 X 1 J 1 (1 )
 . 
V0 I0  
 2n  
 2
2 X 1 J 1 (1 )

 
 2n  
 2 (5.63)
The product X1J1(X1) is maximum at X1 = 2.408, J1(X1) = 0.52
X1J1(X1)max=1.25 at X1 =2.408
2  1.25
 max 
 
 2n  
 2
At n = 2 (n=1 too short a value)
ηmax = 0.227 or 22.7 (5.64)
From equation 5. 50 we have
2mLv0 2e
T '0  where v0  V
e(V0  Vr ) m 0

From equation 5.53, ωT‟0 = 2πn-π/2
2mLv0 2mL 2e V0 
T0   .  2n 
e(V0  Vr ) e m V0  Vr 2 (5.65)

2

 2n  

V0 2 e
.
(V0  Vr ) 2
8 L
2 2
m (5.66)
The above equation gives relationship between V0, Vr and „n‟ for given V0, n= f(Vr)
2 X 1V0
From equation 5. 60 we have V1 
 
 i  2n  
 2
From equation 5.58, Pac = V1I0βiJ1(X1)
2 X 1V0 I 0  i J1 (1 ) 2V0 I 0 X 1 J1 (1 )

Pac   (5.67)
  
 i  2n   2n 
 2 2
Substituting for 2πn-π/2 from equation 5.65
2V0 I 0 X 1 J1 (1 ) m eV0  Vr 

 .
2mL 2e V0
V0 I 0 X 1 J1 (1 )V0  Vr  e
power output  Pac  (5.68)
L 2mV0
Equation 5.68 gives relationship between relationship between
1. Vr and Pac
2. ω and Pac

Fig 5.8: Power output and frequency characteristics of reflex klystron
Power output frequency as a function of Vr for various modes
The above fig gives the characteristic of Reflex Klystron
Electronic Admittance of Reflex Klystron
We have seen earlier that the fundamental component of current in the cavity is
I f  2I 0  i J 1 (1 ) cos(t 2   0 )
The above equation in the phasor form is
I f  2I 0  i J 1 (1 )e  j0
(5.69)
There is a phase difference of π/2 between the voltages V1at t= t0 and V2 at t= t2
V2=V1-ejπ/2 (5.70)
The electronic admittance Ye is defined as the ratio of if to V2
Ye = if / V2 (5.71)
From equation 5.69, 5.70 and 5.71

 
I0 2 J 1 (1 ) j  2 0 . 
Ye   i  '0 . e
V0 X1
I0
where Y0  =dc beam admittance
V0
 
 i 2 '0 J 1 (1 ) j   0 . 
Ye  Y0 . e 2 
(5.72)
X1
Ye is a complex quantity and can be written as Ye = Ge + j Be
It can be seen that the amplitude of electronic admittance is proportional to dc beam

admittance and also transit angle or N
The equivalent circuit of Reflex Klystron is given by
Fig 5.9: Equivalent circuit of reflex klystron
Where Gc = copper loss conductance
Gb = Beam loading conductance
GL = Load conductance
L and C are energy storage elements of the cavity
G = Conductance of the cavity including external load =
G = Gc + Gb + GL = 1 / Rsh (5.73)
Equation 5.69 can also represented as
Ye = Ge + jBe (5.74)
Where Ge = Electronic conductance
Be = Electronic Sustenance
The necessary condition for oscillations is that the magnitude of the real part of the
admittance „Ge‟ should not be less than total conductivity of the cavity „G‟
|-Ge| ≥ G (5.75)
This condition is pictorially represented in the figure below
Fig 5.10: Electronic Admittance spiral of reflex klystron
Electronic and mechanical tuning of Reflex Klystron
For using the device as varying frequency oscillator
Electronic tuning is possible by adjustment of repeller voltage „Vr‟. the tuning range is
about ± 8 MHz in X – band. For higher bands tuning to an extent of ±80 MHz is
practicable.
From equation 6.66, we have

8mL2V0
(V0  Vr ) 2  2

2

 2n   .e
 2 (5.76)
Differentiating Vr w.r.t ω
dVr 16mL2V0
2(Vr  V0 )  
d  
2
 2n   .e
 2
2
dVr 8mL V0 1
.
d    Vr  V0
2
e 2n  
 2
Substituting for Vr  V0 from equation 5.76 above
 
 2n  
dVr 8mL V0 2
2 e

d  
2
2 L 2mV0
e 2n  
 2
dVr V0 m
4L L 8mV0
  .
d  2e  e
2n  2n 
2 2
  2f
dVr 2L 8mV0

df  e
2n 
2 (5.77)
dVr
df 
2L 8mV0
 e
2n 
2 (5.78)
Equation 5.78 gives the relation between variation Vr and the resulting variation in the
frequency.
Mechanical Tuning of Reflex Klystron
The resonant frequency of the cavity can be adjusted using following two methods
1. The frequency of resonance is mechanically adjusted by adjustable screws

using the method called post.

2. The walls of the cavity are moved slightly in and out by means of a adjustable
screw which inturn tightens or loosens small bellows. This will result in
variation of dimensions of the cavity and then the resonantly frequency
Solved problems on Reflex Klystron
Eg1: The parameter gives for a reflex Klystron are
Vr = 2kV, V0 = 500V , L = 2cm, n=1, f = 2 GHz
Find at the variation in frequency df for dVr factor = 0.02 or 2%
from equation 5.78
0.02  2000
df 
2  2  10 2 8  9  10 31  500
 1.6  10 19
2 
2
df  10MHz
Eg 2. A Reflex klystron operates at the peak mode of n=2
And V0 = 300V
I0 = 20mA
V1 = 40V
Calculate (a) input power in watts ‘Pdc’
(b) output power in watts ‘Pac’
(c) Efficiency n
Solution
(a) Input power in watts

Pdc = V0I0 = 300 x 20 x 10-3 = 6 W
(b) Output power in watts, using equation 5.67

2V0 I 0 X 1 J 1 (1 )
Pac 

2n 
2
Assu min g X J 1 (1 ) 
1
 1.25
max
2  300  20  10 3  1.25
Pac   1.36walts

4 
2
(c)Efficiency „n‟
P 1.36
  ac   0.2267 or 22.67%
dc 6.0
Eg 3. Given parameters of a reflex klystron

V0 = 400Vm Rsh = 20 kΩ, f = 9GHz
L = 1mm, n=2
find (a) Repeller Voltage Vr (b) Efficiency ‘η’
Solution : from equation 5.76

2L 2V0 m
Vr  V0  .
 e
2n 
2
2  9  109  10 3 2  9  10 3  400
Vr  400  .
 1.6  10 19
4 
2
36  10 6  20  2  0.569  10 11
Vr  400  .
7
2
720  10 6  0.1138  10 10
Vr  400 
7
2
Vr  1093.9V
(c) Efficiency η
From equation – 5.63
2 X 1 J1 (1 )


2n 
2
Assu min gX 1 J ( X ) 
max
 1.25
2  1.25
  0.227 or 22.7
3.5

UNIT IV
Contents:
 Cross-field Tubes
 Introduction
 Cross field effects
 Magnetrons-different types, cylindrical travelling wave magnetron-Hull
cutoff and Hartree conditions
 Microwave Semiconductor Devices:
 Introduction to Microwave semiconductor devices, classification,
applications
 Transfer Electronic Devices, Gunn diode - principles, RWH theory,
Characteristics, Basic modes of operation - Gunn oscillation modes
 Introduction to Avalanche Transit time devices (brief treatment only),
Illustrative Problems.
Introduction:
Magnetron is a grouping of a simple diode vacuum tube together with built in
cavity resonators and an exceptionally powerful magnet. There are three types of
magnetrons:
 Negative resistance type
 Cyclotron frequency type
 Travelling wave or Cavity type
Negative resistance magnetrons make use of negative resistance between two
anode segments.
Cyclotron frequency magnetrons depends upon synchronism amid an alternating
component of electric field and periodic oscillation of electrons in a direction
parallel to this field.
Cavity type magnetrons depends upon the interface of electrons with a rotating
electromagnetic field of constant angular velocity.
CONSTRUCTION
A magnetron consist of a cathode which is used to release the electrons and

number of anode cavities and a permanent magnet is placed on the flipside of
cathode and the space between the anode cavity and the cathode is called
interacting space.
The electrons which are emitted from the cathode moves in diverse path in the
interacting space depending upon strength of electric and magnetic fields applied
to the magnetron.
Types of Magnetrons:
There are three main types of Magnetrons.
Negative Resistance Type
 The negative resistance between two anode segments, is used.

 They have low efficiency.
 They are used at low frequencies (< 500 MHz).
Cyclotron Frequency Magnetrons
 The synchronism between the electric component and oscillating electrons is

considered.
 Useful for frequencies higher than 100MHz.
Travelling Wave or Cavity Type
 The interaction between electrons and rotating EM field is taken into account.
 High peak power oscillations are provided.
 Useful in radar applications.
Cavity Magnetron
The Magnetron is called as Cavity Magnetron because the anode is made into
resonant cavities and a permanent magnet is used to produce a strong magnetic
field, where the action of both of these makes the device work.
Construction of Cavity Magnetron
A thick cylindrical cathode is present at the center and a cylindrical block of

copper, is fixed axially, which acts as an anode. This anode block is made of a
number of slots that acts as resonant anode cavities.
The space present between the anode and cathode is called as Interaction space.
The electric field is present radially while the magnetic field is present axially in
the cavity magnetron. This magnetic field is produced by a permanent magnet,
which is placed such that the magnetic lines are parallel to cathode and
perpendicular to the electric field present between the anode and the cathode.
The following figures show the constructional details of a cavity magnetron and
the magnetic lines of flux present, axially.
Page no: 9
This Cavity Magnetron has 8 cavities tightly coupled to each other. An N-cavity
magnetron has N modes of operations. These operations depend upon the
frequency and the phase of oscillations. The total phase shift around the ring of this
cavity resonators should be 2nπ where n is an integer.
If ϕv represents the relative phase change of the AC electric field across adjacent
cavities, then
ϕv=2πn/N
Where n=0,±1,±2,±(N/2−1),±N/2
Which means that N/2 mode of resonance can exist if N is
an even number. If,
n=N/2thenϕ v=π
This mode of resonance is called as π−mode.
n=0thenϕv=0
This is called as the Zero mode, because there will be no RF electric field between
the anode and the cathode. This is also called as Fringing Field and this mode is
not used in magnetrons.
Page no: 10
Operation of Cavity Magnetron
When the Cavity Klystron is under operation, we have different cases to consider.
Let us go through them in detail.
Case 1
If the magnetic field is absent, i.e. B = 0, then the behavior of electrons can be
observed in the following figure. Considering an example, where electron a directly
goes to anode under radial electric force.
Case 2
If there is an increase in the magnetic field, a lateral force acts on the electrons.
This can be observed in the following figure, considering electron b which takes a
curved path, while both forces are acting on it.
Page no: 11
Radius of this path is
calculated as R=mv/eB
It varies proportionally with the velocity of the electron and it is inversely

proportional to the magnetic field strength.
Case 3
If the magnetic field B is further increased, the electron follows a path such as the
electron c, just grazing the anode surface and making the anode current zero. This is
called as "Critical magnetic field" (Bc), which is the cut-off magnetic field. Refer the
following figure for better understanding.
Case 4
If the magnetic field is made greater than the critical field, B>Bc
Then the electrons follow a path as electron d, where the electron jumps back to
the cathode, without going to the anode. This causes "back heating" of the cathode.
Refer the following figure.
Page no: 12
This is achieved by cutting off the electric supply once the oscillation begins. If
this is continued, the emitting efficiency of the cathode gets affected.
Operation of Cavity Magnetron with Active RF Field
We have discussed so far the operation of cavity magnetron where the RF field is
absent in the cavities of the magnetron (static case). Let us now discuss its operation
when we have an active RF field.
As in TWT, let us assume that initial RF oscillations are present, due to some noise
transient. The oscillations are sustained by the operation of the device. There are
three kinds of electrons emitted in this process, whose actions are understood as
electrons a, b and c, in three different cases.
Case 1
When oscillations are present, an electron a, slows down transferring energy to

oscillate. Such electrons that transfer their energy to the oscillations are called as
favored electrons. These electrons are responsible for bunching effect.
Case 2
In this case, another electron, say b, takes energy from the oscillations and
increases its velocity. As and when this is done,
 It bends more sharply.
 It spends little time in interaction space.
 It returns to the cathode.
Page no: 13
These electrons are called as unfavored electrons. They don't participate in the
bunching effect. Also, these electrons are harmful as they cause "back heating".
Case 3
In this case, electron c, which is emitted a little later, moves faster. It tries to catch up
with electron a. The next emitted electron d, tries to step with a. As a result, the
favored electrons a, c and d form electron bunches or electron clouds. It called as
"Phase focusing effect".
This whole process is understood better by taking a look at the following figure.
Phase Focusing Effect

Figure A shows the electron movements in different cases while figure B shows the
electron clouds formed.
These electron clouds occur while the device is in operation. The charges present on
the internal surface of these anode segments, follow the oscillations in the cavities.
This creates an electric field rotating clockwise, which can be actually seen while
performing a practical experiment.
While the electric field is rotating, the magnetic flux lines are formed in parallel to the
cathode, under whose combined effect, the electron bunches are formed with four
spokes, directed in regular intervals, to the nearest positive anode segment, in spiral
trajectories.
Page no: 14
UNIT II: SEMICONDUCTOR MICROWAVE DEVICES AND APPLICATIONS
1.
INTRODUCTION
The application of two-terminal semiconductor devices at microwave frequencies has
been increased usage during the past decades. The CW, average, and peak power
outputs of these devices at higher microwave frequencies are much larger than those
obtainable with the best power transistor.
The common characteristic of all active two-terminal solid-state devices is their

negative resistance. The real part of their impedance is negative over a range of
frequencies.
In a positive resistance the current through the resistance and the voltage across it
are in phase. The voltage drop across a positive resistance is positive and a power of
(I2 R) is dissipated in the resistance.
In a negative resistance, however, the current and voltage are out of phase by 180°.
The voltage drop across a negative resistance is negative, and a power of (-I2R) is
generated by the power supply associated with the negative resistance.
In other words, positive resistances absorb power (passive devices), whereas negative
resistances generate power (active devices).
The differences between microwave transistors and transferred electron devices

(TEDs) are fundamental. Transistors operate with either junctions or gates, but TEDs
are bulk devices having no junctions or gates. The majority of transistors are
fabricated from elemental semiconductors, such as silicon or germanium, whereas
TEDs are fabricated from compound semiconductors, such as gallium arsenide
(GaAs), indium phosphide (InP), or cadmium telluride (CdTe).
TEDS operate with ‘hot’ electrons whose energy is much greater than thermal
energy.
2. DIODES-GaAs DIODE
GUNN
Gunn Diode is a one kind of transferred electronic device and exhibits negative
resistance characteristic.
Gunn-effect diodes are named after J. B. Gunn, who in 1963 discovered periodic
fluctuations of current passing through then-type gallium arsenide (GaAs) specimen
when the applied voltage exceeded a certain critical value.
These are bulk devices in the sense that microwave amplification and oscillation are
derived from the bulk negative-resistance property of uniform semiconductors rather
than from the junction negative-resistance property between two different
semiconductors, as in the tunnel diode.
GUNN EFFECT:
A schematic diagram of a uniform n-type GaAs diode with ohmic contacts at the end
surfaces are shown in Fig.1.
J. B. Gunn observed the Gunn effect in the n-type GaAs bulk diode in 1963.
Above some critical voltage, corresponding to an electric field of 2000-4000 volts/cm,

the current in every specimen became a fluctuating function of time. In the GaAs
specimens, this fluctuation took the form of a periodic oscillation superimposed upon
the pulse current. The frequency of oscillation was determined mainly by the
specimen, and not by the external circuit. The period of oscillation was usually
inversely proportional to the specimen length and closely equal to the transit time of
electrons between the electrodes, calculated from their estimated velocity of slightly
over 107 cm/s.
Figure 1. Schematic diagram for ntype GaAs diode.
From Gunn's observation the carrier drift velocity is linearly increased from zero to
a maximum when the electric field is varied from zero to a threshold value. When the
electric field is beyond the threshold value of 3000 V/cm for the n-type GaAs, the
drift velocity is decreased and the diode exhibits negative resistance.
Figure 2. Drift velocity of electrons in n-type GaAs versus electric field.
RIDLEY-WATKINS-HILSUM (RWH) THEORY
The fundamental concept of the Ridley-Watkins-Hilsum (RWH) theory is the

differential negative resistance developed in a bulk solid-state III-V compound when
either a voltage (or electric field) or a current is applied to the terminals of the
sample. There are two modes of negative-resistance devices: voltage-controlled and
current-controlled modes as shown in Fig.3.a and Fig.3.b
Figure 3. Diagram of negative resistance
In the voltage-controlled mode the current density can be multivalued, whereas in the
current- controlled mode the voltage can be multivalued. The major effect of the
appearance of a differential negative-resistance region in the current density-field
curve is to render the sample electrically unstable. As a result, the initially
homogeneous sample becomes electrically heterogeneous in an attempt to reach
stability. In the voltage-controlled negative- resistance mode high-field domains are
formed, separating two low-field regions. The interfaces separating low and high-
field domains lie along equipotential; thus they are in planes perpendicular to the
current direction as shown in Fig. 4(a). In the current-controlled negative-resistance
mode splitting the sample results in high-current filaments running along the field
direction as shown in Fig. 4(b).
Figure 4.Diagrams of high field domain and high current filament.
Expressed mathematically, the negative resistance of the sample at a particular

region is
If an electric field E0 (or voltage V0) is applied to the sample, for example, the
current density lo is generated. As the applied field (or voltage) is increased to E2
(or V2), the current density is decreased to J2. When the field (or voltage) is
decreased to E1 (or V1), the current density is increased to J1 . These phenomena of
the voltage-controlled negative resistance are shown in Fig. 5(a). Similarly, for the
current-controlled mode, the negative- resistance profile is as shown in Fig. 5(b).
Figure 5.Multiple values of current density for negative resistance.
TWO-VALLEY MODEL THEORY

According to the energy band theory of then-type GaAs, a high-mobility lower
valley is separated by an energy of 0.36 eV from a low-mobility upper valley as
shown in Fig. 6.
Figure 6.Two-valley model of electron energy versus wave number for n-type
GaAs.
TABLE 1. DATA FOR TWO VALLEYS IN GaAs
Valley Effective Mass Me Mobility Separation
μ ∆E
Lower Mel = 0.068 μl = 8000 cm2/v-sec ∆E = 0.36
eV
Upper Meu= 1.2 μu = 180 cm2/v-sec ∆E = 0.36

eV
Electron densities in the lower and upper valleys remain the same under an
equilibrium condition. When the applied electric field is lower than the electric field
of the lower valley (E<Ee), no electrons will transfer to the upper valley as shown in
Fig. 7(a).
Figure 7 Transfer of electron densities.
When the applied electric field is higher than that of the lower valley and lower than
that of the upper valley (Ee<E<Eu), electrons will begin to transfer to the upper
valley as shown in Fig. 7(b). And when the applied electric field is higher than that
of the upper valley (Eu<E), all electrons will transfer to the upper valley as shown in
Fig. 7(c). If electron densities in the lower and upper valleys are ne and nu , the
conductivity of the n -type GaAs is
σ = e(nl μl + nuμu) ..(2) Where,e = the electron charge µ = electron mobility
n = ne + nu is the electron density
When a sufficiently high field Eis applied to the specimen, electrons are accelerated
and their effective temperature rises above the lattice temperature. Furthermore, the
lattice temperature also increases. Thus electron density n and mobility µ are both
functions of UNIT
electric field E.
II: SEMICONDUCTOR MICROWAVE DEVICES AND APPLICATIONS
Differentiation of Eq. (7-2-2) with respect to E yields
If the total electron density is given by n =nl + nuand it is assumed that μland
μu are proportional to Ep, where p is a constant, then
Clearly, for negative resistance, the current density J must decrease with increasing
field E or the ratio of dJ/dE must be negative. Such would be the case only if the
right-hand term of Eq.
(9) is less than zero. In other words, the condition for negative resistance is
6.
APPLICATION OF GUNN DIODE
 In Radar Transmitters (police Radar, CW Doppler radar).

 Pulsed Gunn diode oscillators used in transponders, for air traffic control and in
industry telemetry system.
 Fast combinational and sequential logic amplifier. As pump source in
preamplifier.
 In microwave receiver as low and medium power oscillator.
Domain Formation:
Differential resistance occur when an electric field of a certain range is applied to a

multivalley semiconductor, such as then-type GaAs. due to that decrease in drift
velocity with increasing electric field. Its leads to formation of a high-field domain for
microwave generation andamplification.
In the n-type GaAs diode the majority carriers are electrons. When a small voltage
is applied to the diode, the electric field and conduction current density are uniform
diode.
Where
J = conduction current density σ = conductivity
x
Ex = electric field in the x direction

L = length of the diode
V = applied voltage
p = charge density
v = drift velocity
U = unit vector
The current is carried by free electrons that are drifting through a background of
fixed positive charge.
When the applied voltage is above the threshold value, which measuredabout
3000 V/cm times the thickness of the GaAs diode, a high-field domain is formed near
the cathode that reduces the electric field.
L
V = − ∫0 Ex dx
The high field domain then drifts with the carrier stream across the electrodes and
disappears at the anode contact. When the electric field increases, the electron drift
velocity decreases and the GaAs exhibits negative resistance.
As shown fig 1(b) below there exists an excess (or accumulation) of negative charge
that could be caused by a random noise fluctuation or possibly by a permanent
nonuniformity in doping in the n-type GaAs diode.
An electric field is then created by the accumulated charges as shown in Fig 1(d).
The field to the left of point A is lower than that to the right. If the diode is biased at
point EA on the J- E curve, implies that the carriers (or current) flowing into point A
are greater than those flowing out of point A,therefore increasing the excess negative
space charge at A.
when the electric field to the left of point A is lower than it was before, the field to the
right is then greater than the original one, resulting in an even greater space-charge
accumulation. process continues until the low and high fields both reach outside the
differential negative- resistance region Fig1(a).
This process depends on condition that the number of electrons inside the crystal is
large enough to allow the necessary amount of space charge to be built up during the
transit time of the space-charge layer.
The electric field in side the dipole domain would be greater than the fields on
either side of the dipole in Fig 2.(c). Because of the negative differential resistance,
the current in the low- field side would be greater than that in the high-field side.
Then the dipole field reaches a stable condition and moves through the specimen
toward the anode. When the high-field domain disappears at the anode, a new
dipole field starts forming at the cathode and the process is repeated.
Figure 1: formation of an electron accumulation layer in GaAs.

Figure2: formation of an electron dipole layer in GaAs.
Properties of High field domain
Will start to form whenever the electric field in a region of the sample increases above
the threshold E.When the electric field increases, the electron drift velocity decreases
and the GaAs diode exhibits negative resistance.
If additional voltage is applied, the domain will increase in size and absorb more
voltage than was added and the current will decrease.
domain will not disappear before reaching the anode unless the voltage is dropped
appreciably below threshold.
New domain formation can be prevented by decreasing the voltage slightly below
threshold.
Domain will modulate the current through a device as the domain passes through
regions of different doping and cross-sectional area,or domain may disappear.
Effective doping may varied in region.
The domain length is inversely proportional to the doping. devices with the same
product of dopingmultiplied by length will behave similarly in terms of frequency
multiplied by length.
Domain can be detected by a capacitive contact.Presence of a domain anywhere in a

devicecan be detected by a decreased current.
Modes of operation of Gunn diode
Figure 3: Modes of operation for Gunn

diodes
Gunn first announced his observation of microwave oscillation in the n-type GaAs
and n-type InP diodes in 1963, various modes of operation have been developed,
depending on the material parameters and operating conditions.
Formation of strong space-charge instability depends on the conditions that enough
charge is available in the crystal.
four basic modes of operation of uniformly doped bulk diodes with low-resistance
contact are as follows
 Transit Time Domain mode
 Delayed Domain mode
 Quenched Domain mode
 Limited space charge accumulation mode
1. Transit Time Domain mode:
in the region where the product of frequency multiplied by length is about 107 cm/s
and the product of doping multiplied by length is greater than l012/cm2.the device
is unstable because of the cyclic formation of either the accumulation layer or the
high-field domain.
f = Vd/L in these mode is slightly sensitive to the applied voltages since the drift
velocity Vd depends on the bias voltages.
Vd= f .L = 107 cm/s when Vd = VS, thenhigh field domain is stable. Bias voltage is
normally maintain little higher Eth .
At this instant Oscillation period = Transit Time (τo = τt). Operating ‘f’ depends on
‘Vd’ hence on bias voltage > Eth.
It is a low power,low efficiency mode and requires that operating frequency laser
then 30GHz.
These limit on frequency is due to that device length .
2. Delayed Domain mode:

This mode is defined in the region where the product of frequency times length is
about 107 cm/s and the product of doping times length is between 1011 and l012/cm2.
When transit time is chosen that domain is collected E <Eth ,new domain can not
form until field rises again above threshold.
Oscillation period is greater than transit time τo < τt This dealy inhabited mode has an 20 %
Efficiency.
Operating frequency can be less than or equal to Gunn Mode frequency
3. Quenched Domain mode:

This mode is defined in the region where the product of frequency times length is
above 107 cm/s and the quotient of doping divided by frequency is between 2 x
104and 2 x 105.
It is bias field drops below sustaining field Esduring the negative half cycle domain
collapses before it reaches the anode.i.e The domain disappear somewhere in the
sample itself.
Operating frequency will be higher than Gunn Mode and delayed mode, certainly
this depend on the external circuit.
When bias field swings back above threshold value Vth, new domain formed and
process repeats,hence in that mode domain is quenched before it reches the anode.
Frequency of resonant circuit then the transit time frequency is 13%.
4. Limited Space Charge Accumulation mode:

This mode occurs only when there is either Gunn or LSA oscillation, and it is usually
at the region where the product of frequency time’s length is too small to appear in the
figure. When a bulk diode is biased to threshold, the average current suddenly drops
as Gunn oscillation begins.
It gives high power upled high efficiency the domain is not allowed to form
RF voltage and frequency are so chosen that they do not have sufficient time to
form domain above threshold.
IN LSA mode high power and high η(20%),16 to 23% compare to 5% for gunn
mode The field No peak value permits high operating voltage.
Operating frequency is 0.5-50 times more than Gunn Mode.
It can be used up to 100 GHz and is dependent on external resonating circuits. High
Power and High Efficiency.

UNIT-V
MICROWAVE MEASUREMENTS
Contents:
 Description of Microwave Bench – Different Blocks and their Features,
 Waveguide Attenuators – Resistive Card, Rotary Vane types;
 Microwave Power Measurement – Bolometer Method.
 Measurement of Attenuation, Frequency, VSWR
 Impedance Measurements.
Introduction:
● Measurement of voltage and current is easy at Low frequencies therefore

power calculation is easy where as at microwave frequencies it is difficult to
measure voltage and current as they are vary with position in a transmission
line.
● So at microwave frequencies it is convenient to measure power directly
instead of voltage and current.
● At low frequencies, circuits use lumped elements which can be identified
and measured. At microwave frequencies, circuit elements are distributed
and hence it is not important to know what element make up a line.
● Unlike low frequency measurements, many quantities measured at
microwave frequencies are relative and it is not necessary to know their
absolute values.
● Further for power measurement, it is usually sufficient to know the ratio of
two powers rather than exact input or output powers
The following parameters can be conveniently measured at microwave frequencies

 Frequency
 Power
 Attenuation
 Voltage Standing Wave Ratio (VSWR)
 Phase
 Impedance
 Insertion Loss
 Dielectric Constant
 Noise factor
Microwave Bench Block diagram:

The general set up for measurement of any parameter in microwaves is normally
don by a microwave bench.
Power Supply:
 The power supply gives necessary beam voltage and beam current to the circuit.
Also repeller voltage delivered by this unit.
 In lab typically we use 300V beam voltage, 24 mA beam current and take
output readings by varying repeller voltage from -50V to 270V.
Microwave Source:
 The source of microwave may be Gunn diode oscillator, Reflex Klystron or
BWO.
 Microwave source can provide either a continuous wave (CW) or square wave
modulated at an audio rate which is normally 1KHz.
Isolator:
 Isolator is used to protect the source from the reflected power due to mismatch
of the load.
 Power flows in only one direction from source to load.
Precision Attenuator or Variable Attenuator:
 The precision attenuator can provide 0 to 50 dB attenuation above insertion
loss.
 The variable flat attenuator is also used in addition, whose calibration can be
checked against readings of the precision attenuator.
Frequency Meter:
This is the device which measures the frequency of the signal. With this frequency
meter, the signal can be adjusted to its resonance frequency. It also gives provision
to couple the signal to waveguide.
Crystal Detector:
A crystal detector probe and crystal detector mount are indicated in the above
figure, where the detector is connected through a probe to the mount. This is used
to demodulate the signals.
Slotted Line:
In a microwave transmission line or waveguide, the electromagnetic field is
considered as the sum of incident wave from the generator and the reflected wave
to the generator. The reflections indicate a mismatch or a discontinuity. The
magnitude and phase of the reflected wave depends upon the amplitude and phase
of the reflecting impedance.
The standing waves obtained are measured to know the transmission line
imperfections which are necessary to have knowledge on impedance mismatch for
effective transmission. This slotted line helps in measuring the standing wave ratio
of a microwave device.
Standing Wave Integrator:
It is an element that reinforces producing the reading classification of the standing

wave proportion. It gives and slots the waveguide with the help of a gap to adjust
the clock cycles of the given signal. It forwards the movements through BNC cable
to CRO or VSWR to estimate the general characteristics.
Frequency Meter:
It is a component that measures the frequency of the given signal, and it adjusts to
its resonance frequency. The frequency meter also delivers regulation from the
motion to the waveguide.
Waveguide Attenuators:
● Attenuator is an electronic device that reduces the power of the signal
without effecting or reducing the waveform of the signal.
● A device used to control the amount of microwave power transferred from
one point to another on a microwave transmission systems is called
microwave attenuator.
● Microwave attenuators control the flow of microwave power either by
reflecting it or absorbing it.
● Attenuators are commonly used for
 Measuring power gain or loss in dB
 Providing isolation between instruments
 Reducing the power I/P to a particular stage to prevent
overloading.
Attenuators can be classified as fixed or variable type
1. Fixed Attenuators:
● Fixed attenuators in circuits are used to lower voltage, dissipate power and
to impedance matching.
● These are used where fixed amount of attenuation is to provided. If such a
fixed attenuator absorbs all the energy entering into it, we call it as a
waveguide terminator.
● This normally consists of a short section of waveguide with a tapered plug of
absorbing material at the end.
● The tapering is done for providing a gradual transition from the wave guide
medium to the absorbing medium thus reducing the reflection occurring at
the media interface.
Figure shows fixed attenuator where a dielectric slab consisting of glass slab
coated with aquadag or carbon film has been used as a plug.
2. Variable Attenuators:
● Variable attenuators provide continuous or step wise variable attenuation.
● For rectangular waveguides, these attenuators can be flap type or vane type.
● For circular waveguide rotary type is used.
Resistive or Flap type Attenuators:

● Flap type attenuator consists of a resistive element or disc inserted into a
longitudinal slot cut along the center of the wider dimension of the guide.
● Flap is mounted on the hinged arm allowing it to descent into the centre of
waveguide.
● Degree of attenuation can be determined by depth of insertion of the flap.
Rotatory vane Attenuator:
● A resistive rotary vane attenuator consists of three vanes.
● The central vane rotating type placed in the central section of a circular
waveguide arrangement tapered at both ends.
● The other two vanes are rectangular sections.
Microwave Power Measurement:
● The Microwave Power measured is the average power at any position in
waveguide.
● The measurement of power can be divided into three categories
 Measurement of Low microwave power (o.o1 mW-10 mW) –
Bolometer technique
 Measurement of medium microwave power (10 mW – 1 W) –
Calorimetric Technique
 Measurement of high power microwave (> 10 W) – Calorimetric Watt
meter
Measurement of Low microwave power:
● Devices such as bolometers and thermocouples whose resistance changes with

the applied power are capable of measuring low microwave powers.
● Bolometer is a simple temperature sensitive device whose resistance varies
with temperature.
● Bolometers are two types i.e., Barretters and Thermisters.
● Barretters have positive temperature coefficient and their resistance increases
with an increase in temperature
Bolometer is a device which is used for low Microwave power measurements. The
element used in bolometer could be of positive or negative temperature coefficient.
For example, a barrater has a positive temperature coefficient whose resistance
increases with the increase in temperature. Thermistor has negative temperature
coefficient whose resistance decreases with the increase in temperature.
Any of them can be used in the bolometer, but the change in resistance is
proportional to Microwave power applied for measurement. This bolometer is used
in a bridge of the arms as one so that any imbalance caused, affects the output. A
typical example of a bridge circuit using a bolometer is as shown in the following
figure.
The millimeter here, gives the value of the current flowing. The battery is variable,
which is varied to obtain balance, when an imbalance is caused by the behavior of
the bolometer. This adjustment which is made in DC battery voltage is
proportional to the Microwave power. The power handling capacity of this circuit
is limited.
Measurement of Medium Power

The measurement of Microwave power around 10mW to 1W, can be understood as
the measurement of medium power.
A special load is employed, which usually maintains a certain value of specific
heat. The power to be measured, is applied at its input which proportionally
changes the output temperature of the load that it already maintains. The difference
in temperature rise, specifies the input Microwave power to the load.
The bridge balance technique is used here to get the output. The heat transfer
method is used for the measurement of power, which is a Calorimetric technique.
Measurement of High Power

The measurement of Microwave power around 10W to 50KW, can be understood
as the measurement of high power.
The High Microwave power is normally measured by Calorimetric watt meters,
which can be of dry and flow type. The dry type is named so as it uses a coaxial
cable which is filled with di-electric of high hysteresis loss, whereas the flow type
is named so as it uses water or oil or some liquid which is a good absorber of
microwaves.
The change in temperature of the liquid before and after entering the load, is taken
for the calibration of values. The limitations in this method are like flow
determination, calibration and thermal inertia, etc.
Measurement of Attenuation
In practice, Microwave components and devices often provide some attenuation.

The amount of attenuation offered can be measured in two ways. They are − Power
ratio method and RF substitution method.
Attenuation is the ratio of input power to the output power and is normally
expressed in decibels.
1. Power Ratio Method

In this method, the measurement of attenuation takes place in two steps.
 Step 1 − The input and output power of the whole Microwave bench is done
without the device whose attenuation has to be calculated.
 Step 2 − The input and output power of the whole Microwave bench is done
with the device whose attenuation has to be calculated.
The ratio of these powers when compared, gives the value of attenuation.
The following figures are the two setups which explain this.
Drawback − the power and the attenuation measurements may not be accurate,
when the input power is low and attenuation of the network is large.
2. RF Substitution Method
In this method, the measurement of attenuation takes place in three steps.
 Step 1 − the output power of the whole Microwave bench is measured with
the network whose attenuation has to be calculated.
 Step 2 − The output power of the whole Microwave bench is measured by
replacing the network with a precision calibrated attenuator.
 Step 3 − Now, this attenuator is adjusted to obtain the same power as
measured with the network.
The following figures are the two setups which explain this.
The adjusted value on the attenuator gives the attenuation of the network directly.
The drawback in the above method is avoided here and hence this is a better
procedure to measure the attenuation.
Frequency Measurement:
Mechanical techniques
The mechanical techniques can be divided into two types
1. Slotted line technique
2. Cavity wave meter technique
The above techniques operation and accuracy depends upon the physical
dimensions of the mechanical devices.
Slotted Line Technique
● A slotted line is a piece of transmission line and it is constructed in such a
way that the voltage and current along it can be measured continuously over
its length.
● The general set up for the measurement of microwave frequency is shown
 When a waveguide is mismatched by a load, a standing wave is created in the
waveguide.
 The distance between the two adjacent maxima or minima is one half of the
wavelength.
 Standing waves are set up in a slotted line producing minima every half
wavelength apart.
 The distance between minima can be measured and guide wavelength hence
frequency can be measured.
Cavity Wave meter Technique or Resonant Cavity Technique:
● A typical wave meter is a cylindrical cavity with a variable short circuit

termination which changes the resonance frequency of the cavity by changing
cavity length.
● Wave meter axis placed perpendicular to the broad wall of the waveguide.
● Wave meter axis is coupled by a hole in the narrow wall as shown
● A block of absorbing material placed at the back of the tuning plunger prevents
oscillation on the top of it.
● Cavity resonates at different frequencies for different plunger positions.
● The wave meter is called absorption type wave meter because the power is
absorbed in wave meter at resonance and they attenuate the signal frequency to
which they are tuned.
● The wave meter is called transitive cavity wave meter which passes the signal
frequency to which they are tuned.
● The absorption type wave meters are preferred for the laboratory frequency
measurement.
● The general set up for the frequency measurement by absorption type cavity wave
meter is shown
Measurement of VSWR:
In any Microwave practical applications, any kind of impedance mismatches lead

to the formation of standing waves. The strength of these standing waves is
measured by Voltage Standing Wave Ratio
the ratio of maximum to minimum voltage gives the VSWR which is denoted by S.
The measurement of VSWR can be done in two ways, Low VSWR and
High VSWR measurements.
1. Measurement of Low VSWR S<10:

The measurement of low VSWR can be done by adjusting the attenuator to get a
reading on a DC mill voltmeter which is VSWR meter. The readings can be taken
by adjusting the slotted line and the attenuator in such a way that the DC mill
voltmeter shows a full scale reading as well as a minimum reading.
Now these two readings are calculated to find out the VSWR of the network.
2. Measurement of High VSWR S>10:

The measurement of high VSWR whose value is greater than 10 can be measured
by a method called the double minimum method. In this method, the reading at
the minimum value is taken, and the readings at the half point of minimum value in
the crest before and the crest after are also taken. This can be understood by the
following figure.
Now, the VSWR can be calculated by a relation, given as −
As the two minimum points are being considered here, this is called as double
minimum method.
Measurement of Impedance:
Impedance at microwave frequencies can be measured by using following 3
methods
 Using Magic T
 Using Slotted line
 Using Reflectometer
Apart from Magic Tee, we have two different methods, one is using the slotted line
and the other is using the reflectometer.
1. Impedance Using the Slotted Line:

In this method, impedance is measured using slotted line and load ZL and by using
this, Vmax and Vmin can be determined. In this method, the measurement of
impedance takes place in two steps.
 Step 1 − Determining Vmin using load ZL.
 Step 2 − Determining Vmin by short circuiting the load.
This is shown in the following figures.

When we try to obtain the values of Vmax and Vmin using a load, we get certain
values. However, if the same is done by short circuiting the load, the minimum
gets shifted, either to the right or to the left. If this shift is to the left, it means that
the load is inductive and if it the shift is to the right, it means that the load is
capacitive in nature. The following figure explains this.
By recording the data, unknown impedance is calculated. The impedance and
reflection coefficient ρ can be obtained in both magnitude and phase.
2. Impedance Using the Reflectometer:
Unlike slotted line, the Reflectometer helps to find only the magnitude of
impedance and not the phase angle. In this method, two directional couplers which
are identical but differs in direction are taken.
These two couplers are used in sampling the incident power Pi and reflected
power Pr from the load. The reflectometer is connected as shown in the following
figure. It is used to obtain the magnitude of reflection coefficient ρ, from which the
impedance can be obtained.
From the reflectometer reading, we have
Where, zg is known wave impedance and z is unknown impedance.

Though the forward and reverse wave parameters are observed here, there will be
no interference due to the directional property of the couplers. The attenuator helps
in maintaining low input power.

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MICRO WAVE ENGINEERING

Department of Electronics and Communication Engineering

MALLA REDDY COLLEGE

MALLA REDDY COLLEGE OF ENGINEERING AND TECHNOLOGY

IV Year B.Tech. ECE- I Sem L/T/P/C

1. To analyze Waveguides in Rectangular Coordinate Systems.

Malla Reddy College of Engineering and Technology (MRCET)

1) Microwave Devices and Circuits – Samuel Y. Liao, PHI, 3rd Edition,1994.

Malla Reddy College of Engineering and Technology (MRCET)

Military and Radar

Semiconductor Processing Techniques

Modes of propagation in a Waveguide

 Transverse Electric wave:

 Transverse Magnetic wave:

 Transverse electromagnetic wave:

1. In waveguides, the power loss during propagation is almost negligible.

1. Its installation and manufacturing cost is high.

Wave propagation in rectangular waveguide:

Ñ2xy Ez0 + h2 Ez0 = 0

Since Ez(x,y,z) = Ez0(x,y)e-gz, we get the following equation,

If we use the method of separation of variables, that is E z0(x,y)=X(x).Y(y) we get,

From all these, we conclude that

X(x) is in the form of sin kxx, where kx=mp/a, m=1,2,3,…

Y(y) is in the form of sin kyy, where ky=np/b, n=1,2,3,…

So the solution for Ez0(x,y) is

From ky2=h2-kx2, we have;

For TM waves, we have

Here, the cut-off wave number is

Since l=u/f, we have the cut-off wavelength,

The phase velocity is

For TE waves Ez = 0 and Hz should be solved from equation for TE mode;

Since Hz(x,y,z) = Hz0(x,y)e-gz, we get the following equation,

If we use the method of separation of variables, that is H z0(x,y)=X(x).Y(y) we get,

From all these, we get

From ky2=h2-kx2, we have;

For TE waves, we have

From these equations, we obtain

Here, the cut-off wave number is

The cut-off frequency is at the point where g vanishes. Therefore,

Since l=u/f, we have the cut-off wavelength,

The phase velocity is

After some manipulation, we get

From the formula for the cut-off frequency

Rectangular wave guide Cutoff frequencies:

Frequencies below the cut-off frequency are attenuated by the waveguide.

Dominant and Degenerate Modes:

 Scattering Matrix - Significance, Formulation and properties

 Linear two-port (and multi-port) networks are characterized by a number of

WAVEGUIDE MULTIPORT JUNCTIONS:

T-JUNCTION POWER DIVIDER USING WAVEGUIDE:

For very high frequency, power divider using waveguide is of 4 types

An H-Plane Tee junction is designed by bestowing a simple waveguide to a

Properties of H-Plane Tee

The properties of H-Plane Tee can be defined by its [S]3×3matrix.

From the Unitary property

From the Equation 6,

Properties of E-Plane Tee

The properties of E-Plane Tee can be defined by its [S]3x3[S]3x3 matrix.

3.The port is perfectly matched to the junction.