Technische Information / Technical Information

IGBT-Module
IGBT-Modules BSM100GD120DLC

Höchstzulässige Werte / Maximum rated values

Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
VCES 1200 V
collector-emitter voltage

Kollektor-Dauergleichstrom TC = 80 °C IC,nom. 100 A

DC-collector current TC = 25 °C IC 160 A

Periodischer Kollektor Spitzenstrom

tP = 1 ms, TC = 80°C ICRM 200 A
repetitive peak collector current

Gesamt-Verlustleistung
TC=25°C, Transistor Ptot 650 W
total power dissipation

Gate-Emitter-Spitzenspannung
VGES +/- 20V V
gate-emitter peak voltage

Dauergleichstrom
IF 100 A
DC forward current

Periodischer Spitzenstrom
tP = 1 ms IFRM 200 A
repetitive peak forw. current

Grenzlastintegral der Diode 2

2 VR = 0V, t p = 10ms, T Vj = 125°C I t 1,71 kA2s
I t - value, Diode

Isolations-Prüfspannung
RMS, f = 50 Hz, t = 1 min. VISOL 2,5 kV
insulation test voltage

Charakteristische Werte / Characteristic values

Transistor / Transistor min. typ. max.
Kollektor-Emitter Sättigungsspannung IC = 100A, V GE = 15V, Tvj = 25°C VCE sat - 2,1 2,6 V
collector-emitter saturation voltage IC = 100A, V GE = 15V, Tvj = 125°C - 2,4 2,9 V

Gate-Schwellenspannung
IC = 4mA, V CE = VGE, Tvj = 25°C VGE(th) 4,5 5,5 6,5 V
gate threshold voltage

Gateladung
VGE = -15V...+15V QG - 1,1 - µC
gate charge

Eingangskapazität
f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V Cies - 6,5 - nF
input capacitance

Rückwirkungskapazität
f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V Cres - 0,42 - nF
reverse transfer capacitance

Kollektor-Emitter Reststrom VCE = 1200V, V GE = 0V, Tvj = 25°C ICES - 10 500 µA

collector-emitter cut-off current VCE = 1200V, V GE = 0V, Tvj = 125°C - 500 - µA

Gate-Emitter Reststrom
VCE = 0V, V GE = 20V, Tvj = 25°C IGES - - 400 nA
gate-emitter leakage current

prepared by: Mark Münzer date of publication: 09.09.1999

approved by: M. Hierholzer revision: 2

1(8) Seriendatenblatt_BSM100GD120DLC.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM100GD120DLC

Charakteristische Werte / Characteristic values

Transistor / Transistor min. typ. max.
Einschaltverzögerungszeit (ind. Last) IC = 100A, V CC = 600V
turn on delay time (inductive load) VGE = ±15V, R G = 5,6Ω, Tvj = 25°C td,on - 0,06 - µs

VGE = ±15V, R G = 5,6Ω, Tvj = 125°C - 0,06 - µs

Anstiegszeit (induktive Last) IC = 100A, V CC = 600V

rise time (inductive load) VGE = ±15V, R G = 5,6Ω, Tvj = 25°C tr - 0,05 - µs

VGE = ±15V, R G = 5,6Ω, Tvj = 125°C - 0,05 - µs

Abschaltverzögerungszeit (ind. Last) IC = 100A, V CC = 600V

turn off delay time (inductive load) VGE = ±15V, R G = 5,6Ω, Tvj = 25°C td,off - 0,35 - µs

VGE = ±15V, R G = 5,6Ω, Tvj = 125°C - 0,40 - µs

Fallzeit (induktive Last) IC = 100A, V CC = 600V

fall time (inductive load) VGE = ±15V, R G = 5,6Ω, Tvj = 25°C tf - 0,06 - µs

VGE = ±15V, R G = 5,6Ω, Tvj = 125°C - 0,08 - µs

Einschaltverlustenergie pro Puls IC = 100A, V CC = 600V, V GE = 15V

turn-on energy loss per pulse RG = 5,6Ω, Tvj = 125°C, LS = 60nH Eon - 10 - mWs

Abschaltverlustenergie pro Puls IC = 100A, V CC = 600V, V GE = 15V

turn-off energy loss per pulse RG = 5,6Ω, Tvj = 125°C, LS = 60nH Eoff - 12 - mWs

Kurzschlußverhalten tP ≤ 10µsec, V GE ≤ 15V, R G = 5,6Ω

SC Data TVj≤125°C, V CC=900V, V CEmax=VCES -LsCE ·dI/dt ISC - 650 - A

Modulinduktivität
LsCE - 25 - nH
stray inductance module

Modul Leitungswiderstand, Anschlüsse – Chip

TC=25°C RCC‘+EE‘ - 1,8 - mΩ
module lead resistance, terminals – chip

Charakteristische Werte / Characteristic values

Diode / Diode min. typ. max.
Durchlaßspannung IF = 100A, V GE = 0V, Tvj = 25°C VF - 1,8 2,3 V
forward voltage IF = 100A, V GE = 0V, Tvj = 125°C - 1,7 2,2 V

Rückstromspitze IF = 100A, - di F/dt = 2700A/µsec

peak reverse recovery current VR = 600V, VGE = -15V, T vj = 25°C IRM - 125 - A
VR = 600V, VGE = -15V, T vj = 125°C - 155 - A

Sperrverzögerungsladung IF = 100A, - di F/dt = 2700A/µsec

recovered charge VR = 600V, VGE = -15V, T vj = 25°C Qr - 12 - µAs

VR = 600V, VGE = -15V, T vj = 125°C - 22 - µAs

Abschaltenergie pro Puls IF = 100A, - di F/dt = 2700A/µsec

reverse recovery energy VR = 600V, VGE = -15V, T vj = 25°C Erec - 4 - mWs

VR = 600V, VGE = -15V, T vj = 125°C - 9 - mWs

2(8) Seriendatenblatt_BSM100GD120DLC.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM100GD120DLC

Thermische Eigenschaften / Thermal properties

min. typ. max.
Innerer Wärmewiderstand Transistor / transistor, DC RthJC - - 0,19 K/W
thermal resistance, junction to case Diode/Diode, DC - - 0,36 K/W

Übergangs-Wärmewiderstand pro Modul / per module

RthCK - 0,009 - K/W
thermal resistance, case to heatsink λPaste = 1 W/m * K / λgrease = 1 W/m * K

Höchstzulässige Sperrschichttemperatur
Tvj - - 150 °C
maximum junction temperature

Betriebstemperatur
Top -40 - 125 °C
operation temperature

Lagertemperatur
Tstg -40 - 150 °C
storage temperature

Mechanische Eigenschaften / Mechanical properties

Gehäuse, siehe Anlage

case, see appendix

Innere Isolation
AL2O3
internal insulation

CTI
225
comperative tracking index

Anzugsdrehmoment f. mech. Befestigung screw M5 M1 3 6 Nm

mounting torque

Anzugsdrehmoment f. elektr. Anschlüsse Nm

terminal connection torque

Gewicht
G 300 g
weight

Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.

This technical information specifies semiconductor devices but promises no characteristics. It is

valid in combination with the belonging technical notes.

3(8) Seriendatenblatt_BSM100GD120DLC.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM100GD120DLC

Ausgangskennlinie (typisch) IC = f (VCE)

Output characteristic (typical) V GE = 15V

200

180

160 Tj = 25°C
Tj = 125°C
140

120
IC [A]

100

80

60

40

20

0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0

VCE [V]

Ausgangskennlinienfeld (typisch) IC = f (VCE)

Output characteristic (typical) T vj = 125°C

200

180
VGE = 17V
160 VGE = 15V
VGE = 13V
140 VGE = 11V
VGE = 9V
120
VGE = 7V
IC [A]

100

80

60

40

20

0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0

VCE [V]

4(8) Seriendatenblatt_BSM100GD120DLC.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM100GD120DLC

Übertragungscharakteristik (typisch) IC = f (VGE)

Transfer characteristic (typical) VCE = 20V

200

180
Tj = 25°C
160
Tj = 125°C

140

120
IC [A]

100

80

60

40

20

0
5 6 7 8 9 10 11 12

VGE [V]

Durchlaßkennlinie der Inversdiode (typisch) IF = f (VF)

Forward characteristic of inverse diode (typical)

200

180
Tj = 25°C
160 Tj = 125°C

140

120
IF [A]

100

80

60

40

20

0
0,0 0,5 1,0 1,5 2,0 2,5 3,0

VF [V]

5(8) Seriendatenblatt_BSM100GD120DLC.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM100GD120DLC

Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC)

Switching losses (typical) VGE=15V, Rgon = Rgoff = 5,6 Ω , VCE = 600V, T j = 125°C
28

Eoff
24
Eon
Erec

20
E [mJ]

16

12

0
0 20 40 60 80 100 120 140 160 180 200
IC [A]

Schaltverluste (typisch) Eon = f (RG) , Eoff = f (RG) , Erec = f (RG)

Switching losses (typical) VGE=15V , I C = 100A , V CE = 600V , T j = 125°C

40

35 Eoff
Eon
Erec
30

25
E [mJ]

20

15

10

0
0 5 10 15 20 25 30 35 40 45 50

Ω]
RG [Ω

6(8) Seriendatenblatt_BSM100GD120DLC.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM100GD120DLC

Transienter Wärmewiderstand ZthJC = f (t)

Transient thermal impedance
1

0,1
[K / W]
ZthJC

0,01 Zth:Diode
Zth:IGBT

0,001
0,001 0,01 0,1 1 10 100

t [sec]

i 1 2 3 4
ri [K/kW] : IGBT 21,25 64,32 83,81 20,62
τi [sec] : IGBT 0,002 0,03 0,066 1,655
ri [K/kW] : Diode 47,11 124,78 136,14 51,97
τi [sec] : Diode 0,002 0,03 0,072 0,682

Sicherer Arbeitsbereich (RBSOA)

Reverse bias safe operation area (RBSOA) VGE = 15V, R g = 5,6 Ohm, T vj= 125°C

240

200

160
IC [A]

IC,Modul
IC,Chip
120

80

40

0
0 200 400 600 800 1000 1200 1400

VCE [V]

7(8) Seriendatenblatt_BSM100GD120DLC.xls
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IGBT-Module
IGBT-Modules BSM100GD120DLC

Econo 3
118.11
94.5

119

121.5
99.9
4 x 19.05 = 76.2
19.05 3.81

19 18 17 16 15

1 2 3 4 5 6 7 8 9 10 11 12

3.81 1.15x1.0
15.24
5 x 15.24 =76.2
110
connections to be made externally
P+ / 21 P+ / 13

1 5 9
2 6 10
19
17
15
3 7 11
4 8 12
N- / 20 N- / 14

IS8

8(8) Seriendatenblatt_BSM100GD120DLC1.xls