Si 4425 BD
Si 4425 BD
Si 4425 BD
Vishay Siliconix
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SO-8 S
S 1 8 D
S 2 7 D
G
S 3 6 D
G 4 5 D
Top View
D
Ordering Information: Si4425BDY-T1-E3 (Lead (Pb)-free)
Si4425BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
VGS = 10 V thru 5 V
40 40
4V
I D - Drain Current (A)
30 30
20 20
TC = 125 °C
10 10
25 °C
3V - 55 °C
0 0
0 1 2 3 4 5 0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics
0.020 4000
RDS(on) - On-Resistance (Ω)
C - Capacitance (pF)
VGS = 4.5 V Ciss
0.015 3000
VGS = 10 V
0.010 2000
Crss
0.000 0
0 10 20 30 40 50 0 6 12 18 24 30
10 1.6
VDS = 15 V VGS = 10 V
ID = 12 A ID = 12 A
VGS - Gate-to-Source Voltage (V)
8 1.4
R DS(on) - On-Resistance
(Normalized)
6 1.2
4 1.0
2 0.8
0 0.6
0 10 20 30 40 50 60 70 80 - 50 - 25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
50 0.05
0.04
RDS(on) - On-Resistance (Ω)
I S - Source Current (A)
TJ = 150 °C ID = 12 A
10 0.03
0.02
TJ = 25 °C
0.01
1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
0.6 25
ID = 250 µA
VGS(th) Variance (V)
0.4 20
Power (W)
0.2 15
0.0 10
- 0.2 5
- 0.4 0
- 50 - 25 0 25 50 75 100 125 150 10-2 10 -1 1 10 100 600
TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)* IDM Limited
P(t) = 0.0001
10
P(t) = 0.001
ID - Drain Current (A)
P(t) = 0.01
ID(on)
1 Limited
P(t) = 0.1
P(t) = 1
TA = 25 °C
0.1 Single Pulse P(t) = 10
DC
BVDSS Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which RDS(on) is specified
Safe Operating Area
1
Normalized Effective Transient
0.2
Notes:
0.1
0.1 PDM
0.05 t1
t2
t1
1. Duty Cycle, D =
0.02 t2
2. Per Unit Base = R thJA = 70 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72000.
8 7 6 5
E H
1 2 3 4
D h x 45
C
0.25 mm (Gage Plane)
A
All Leads
q 0.101 mm
e B A1 L
0.004"
MILLIMETERS INCHES
DIM Min Max Min Max
A 1.35 1.75 0.053 0.069
A1 0.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q 0° 8° 0° 8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
0.172
(4.369)
0.028
(0.711)
(6.248)
(3.861)
0.246
0.152
(1.194)
0.047
0.022 0.050
(0.559) (1.270)
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