Experiment II - TRANSISTOR CHARACTERISTICS

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Page 1 of 6 SPH : Analog Electronics Lab Manual

Experiment II: TRANSISTOR CHARACTERISTICS.


Aim:
1. To study the input and output characteristics of a transistor in a Common-Emitter
configuration.
Apparatus:
Transistor BC 107 (identify the provided transistor), Resistors (1KΩ, 100KΩ), Breadboard, Dual
DC Power Supply, Digital Ammeters (0-200mA, 0-200µA), 2 Digital Voltmeters, connecting
wires.

Key theory:
Transistors are crucial semiconductor devices with a multitude of functions, including switching,
amplifying, detecting, and signal modulation. Acting as switches or gates for electric signals,
they are typically composed of three layers of semiconductor materials, mostly made of silicon
or germanium. These versatile components find applications in both digital and analogue
functions, such as amplifiers, switches, voltage stabilizers, and oscillators.
There are two main types of transistors: NPN (Negative-Positive-Negative) and PNP
(Positive-Negative-Positive) Bipolar Junction Transistors (BJTs), each suited for specific circuit
applications due to the different modes of operation and current polarities.
Transistor characteristics are essential in representing the relationship between electric current
and electric voltage in a circuit. The three main types of characteristic curves are Input, Output,
and Current Transfer Characteristics. For this practical session, we will focus on the Input and
Output characteristics.
Transistor configurations, based on these characteristics, come in three types: Common-Emitter,
Common-Base, and Common-Collector (emitter follower), each exhibiting distinct characteristic
curves.
In the Common-Emitter configuration, the Emitter serves as a common terminal for both input
and output, functioning as an inverting amplifier circuit. Key parameters for this configuration
include the input voltage (VBE), input current (IB), output voltage (VCE), and output current (IC),
where the Emitter current is the sum of the base current and collector current (IE = IC + IB).
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Set up and procedure:

Note: Have the circuits inspected before powering on.


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Input Characteristics:

1. Connect the circuit as shown in the circuit diagram.

2. Keep output voltage VCE = 0V by varying VCC.

4. Initially vary VBB in steps of 0.1V. Varying VBB gradually, note down base current IB and
base-emitter voltage VBE. Once the current starts increasing vary VBB in steps of 1V up to 12V.

5. Repeat the above procedure (step 3) for VCE = 5V.

Output Characteristics:

1. Connect the circuit as shown in the circuit diagram.

2. Keep emitter current IB = 0 µA by varying VBB.

3. Varying VCC gradually in steps of 1V up to 18V and note down collector current IC and
Collector-Emitter Voltage(VCE).

4. Repeat the above procedure (step 3) for IB = 20µA, 40µA, and 60µA.

Results:
Group members
# Name: Reg. no:
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1
2
3
4
5
6
7
NOTE: The table formats below are only for illustration purposes only. Ensure you collect
the right amount of data as per the instructions.

Input Characteristics.
VCE = 0 V VCE =2 V VCE = 5V
VBB (Volts) VBE (Volts) IB (µA) VBE (Volts) IB (µA) VBE (Volts) IB (µA)
0
0.7
1
2
3
4

Output Characteristics

VCC(Vol IB = 0µA IB = 20µA IB = 40µA IB = 60µA


ts)
VCE IC (mA) VCE IC (mA) VCE IC (mA) VCE IC (mA)
(Volts) (Volts) (Volts) (Volts)

4
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10

11

12

13

14

15

16

Data and analysis:


1. Plot the input characteristics by taking ΔVBE on X-axis and IB on Y-axis at a constant
VCE as a constant parameter

2. Plot the output characteristics by taking VCE on X-axis and taking IC on Y-axis taking
IB as a constant parameter.

Calculations:

1. Input Characteristics: To obtain input resistance find ΔVBE and ΔIB for a constant VCE on
one of the input characteristics.

Input impedance Ri = ΔVBE / Δ IB (VCE is constant)

2. Output Characteristics: To obtain output resistance find Δ IC and Δ VCB at a constant IB.

Output admittance Ro = ΔIC / ΔVCE (IB is constant)


Page 6 of 6 SPH : Analog Electronics Lab Manual

3. On your output characteristics graph, identify the following:

● The active region of the transistor.


● Saturation region of the transistor.
● Cut-off region of the transistor.

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