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RF Circuit 1

The document discusses RF circuit design topics including transmission line parameters, scattering parameters, amplifier classes of operation, noise figure circles, and the differences between amplifiers and oscillators. It also includes questions related to transmission line analysis, Smith charts, transistor modeling, amplifier biasing networks, and mixer design.

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Shiva Glenn
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0% found this document useful (0 votes)
21 views2 pages

RF Circuit 1

The document discusses RF circuit design topics including transmission line parameters, scattering parameters, amplifier classes of operation, noise figure circles, and the differences between amplifiers and oscillators. It also includes questions related to transmission line analysis, Smith charts, transistor modeling, amplifier biasing networks, and mixer design.

Uploaded by

Shiva Glenn
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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JN

Code No: 118EH


R13
JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD
B. Tech IV Year II Semester Examinations, June - 2018
TU
RF CIRCUIT DESIGN
(Electronics and Communication Engineering)
Time: 3 hours Max. Marks: 75
H
Note: This question paper contains two parts A and B.
Part A is compulsory which carries 25 marks. Answer all questions in Part A. Part B
consists of 5 Units. Answer any one full question from each unit. Each question carries 10
U
marks and may have a, b, c as sub questions.
SE
PART - A
(25 Marks)

1.a) Give the RF behavior of capacitor. [2]


b) What are the different types of transmission lines? [3]
D
c) Define Scattering parameters. [2]
d) What is meant by standing wave Ratio? And give its range. [3]
e) What is meant by Non Linear Model? [2]
23
f) State the parameters used for small Signal BJT Model. [3]
g) What is meant by Forbidden Region? [2]
h) Distinguish the Classes of operation of Amplifiers. [3]
-0
i) What are the properties of Noise Figure Circles? [2]
j) What is the difference between Amplifier and oscillator? [3]
6-
PART - B
(50 Marks)
1
2.a) A generator of 1V, 1000Hz supplies power to 1000Km open wire line attenuated with
characteristic impedance and have the following parameters.
8A
R=10.4 ohms, L=0.0037 H,G=0.8µ mhos, C=0.083µ Farads.
Also evaluate Secondary constants of the line
b) Starting from the fundamentals derive transmission line equations expressing voltage and
current at any point along the line in terms of sending end voltage and current. [5+5]
M
OR
3.a) A certain transmission line operating at w=106 rad/sec has α= 8 dB/m, β= 1 rad/m and
Zo=60+j40 Ω and is 2m long. If the line is connected to source of 10 V, Zs = 40 Ω and
terminated by a load of 20+j50 Ω, determine input impedance.
Se
b) Evaluate the input impedance of a line shorted at the output end. [5+5]

4.a) Explain about properties of smith chart


t2
b) Analyse highpass Filter using Kuroda's Identities in detail. [5+5]
OR
5. A 30 m long lossless transmission line with characteristic impedance (Zo) of 50 ohm is
terminated by a load impedance (ZL) = 60 + j40 ohm. The operating wavelength is 90 m.
Find the input impedance and SWR using smith chart. [10]
JN
6. A FET operated at 5.7 GHz has the following S parameters S11 = 0.5 -600, S12 = 0.02 00,
S21 = 6.5 1150, S22 = 0.6 -350.
a) Determine is the circuit is unconditionally stable
b) Find the maximum power gain under optimal choice of the reflection coefficient,
TU
assuming the unilateral design (S12 = 0).
c) Adjust the load reflection coefficient such that the desired gain is realized using the
concept of constant gain circles. [10]
OR
H
7. Explain in detail the transistor analysis using Nonlinear and Linear Models and provide the
conditions. [10]
U
8. Design two T-type matching networks that transform a ZL = 100 Ω load to an
Zin = (20-j40) Ω input impedance at nodal quality factor of Qn = 4. The matching should be
SE
achieved at f0 = 600MHz. [10]
OR
9. Analyse in detail the Biasing Networks used for different class of operation Amplifiers
for FET . [10]
D
10. Explain the different Stabilization Methods used for transistor amplifier in detail.[10]
OR
23
11. Explain the Design steps and procedure used for Single and Double Balanced Mixers
with diagram. [10]
-0
6-
---ooOoo---
1 8A
M
Se
t2

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