Emailing Module Wise Important Questions
Emailing Module Wise Important Questions
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MODULE – 2 ELECTRICAL PROPERTIES OF SOLIDS
1. Explain different types of polarization mechanisms with suitable
diagrams.
2. Explain BCS theory.
3. Derive an expression for Clasius – Mossotti equation dielectric
materials.
4. Discuss different types of Superconducting materials.
5. Explain the dependence of resistance on temperature of a
superconductor? Describe Type I and type II superconductors
6. Mention any three assumptions of quantum free electron theory.
7. Discuss the dependence of Fermi factor on temperature and
Consequent effect on probability of occupation of energy levels.
8. Explain the construction and working of MAGLEV vehicle.
PROBLEMS :
9. Find the polarization produced in a dielectric medium of relative
permittivity 15 in presence of an electric field of 500V/m.
10. Calculate the probability of an electron occupying energy an energy
level 0.02eV above Fermi level at 200Kand 400K in a material.
11. A medium in thermal equilibrium at temperature 300K has two energy
levels with wavelength separation of 1m. Find the ration of population
densities of upper and lower levels.
12. If NaCl is subjected to an electric field of 1000 V/m and the resulting
polarization is 4.3 x 10– 8 C / m2, calculate the dielectric constant of
NaCl.
13. The critical field for niobium is 1x105A/m at 8K and 2x105A/m at 0K.
Calculate the critical temperature of the element.
14. The dielectric constant of helium gas at NTP is 1.0000684. Calculate
the electronic polarizability of the atoms if helium gas contains 2.7 x
1025atoms/ m3.
15. If a NaCl crystal is subjected to an electric field of 1000 V/m and the
resulting polarization is 4.3 x 10 – 8 C/m2.Calculate the dielectric
constant of NaCl.
16. At 6 K critical field is 5x103A/m. Calculate the transition temperature
when critical magnetic field is 2x104A/m at 0 K.
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PROBLEMS :
11. The refractive indices of core and cladding are1.50 and 1.48
respectively in an optical fiber. Find the numerical aperture and angle
of acceptance.
12. The angle of acceptance of an optical fiber is 300 when kept in air. Find
the angle of acceptance when it is in a medium of refractive index
1.33.
13. Discuss different types of optical fibers.
14. A fiber 500 m long has an input power of 8.6 mW and output power
7.5 mW. What is the attenuation constant of the fiber ?
15. He-Ne laser is emitting a laser beam with an average power of 4.5mW.
Find the number of photons emitted per second by the laser. The
wavelength of the emitted radiation is 632.8 nm
16. In a step index optical fiber with core diameter of 60 μm & core and
cladding refractive indices as 1.50 & 1.48 respectively, when the
wavelength of 850 nm is propagating through it. Calculate the
numerical aperture, fractional index change, V parameter and number
of modes in the fiber.
17. A pulsed laser emits photons of wavelength 780nm with 20 mW
average power/pulse. Calculate the number of photons contained in
each pulse if the pulse duration is 10ns.
The average output power of laser source emitting a laser beam of
wavelength 6328A0 is 5mW. Find the number of photons emitted per
second by the laser source.
PROBLEMS :
9. Calculate the number of donor atoms which must be added to an
intrinsic semiconductor to obtain the resistivity as 10 –6 Ω-m,
Given data: =1000 m2V–1s–1.
10. An n- type Germanium sample as a Donor density of 1021/m3, it is
arranged in a Hall experiment having magnetic field of 0.5 T and the
current density is 500 A/m2. Find the Hall voltage if the sample is 3
mm wide.
11. The following data are given for intrinsic Ge at 300 K, ni = 2.4x1019per
m3, = 0.39 m2V–1s–1 and = 0.19 m2V–1s–1. Calculate the resistivity
of the sample.
12. An n- type Germanium sample as a Donor density of 1021/m3, it is
arranged in a Hall experiment having magnetic field of 0.5 T and the
current density is 500 A/m2. Find the Hall voltage if the sample is 3
mm wide.
13. The resistivity of intrinsic Germanium at 270 C is equal to 0.47 Ω-m.
Assuming electron and hole mobilities as 0.38 m2V–1s–1 and
0.18 m2V–1s–1 respectively. Calculate the intrinsic carrier density.
14. Calculate the concentration at which donor atoms need to added to a
silicon semiconductor, so that it results in an n–type semiconductors
with a conductivity of 2.2 x 10 – 4 ʊ/m and mobility of electron being
1.25 x 10– 3 m2V–1s–1
15. Calculate the number of acceptors to be added to a Germanium
sample to obtain the resistivity of 10 Ω-m, Given: =1700 m2V–1s–1.
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