2N440 Transistor References
2N440 Transistor References
TO - 92 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
max. ∅
0.022 (0.55)
o
Max. Operating Temperature Range TJ 150 C
o
Storage Temperature Range TSTG -55 to +150 C
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1) (I C = 1.0 mAdc, I B = 0) V(BR)CEO 40 - Vdc
ON CHARACTERISTICS(1)
DC Current Gain (I C = 0.1mAdc, V CE = 1.0Vdc) 20 -
(I C = 1.0mAdc, V CE = 1.0Vdc) 40 -
(I C = 500mAdc, V CE = 2.0Vdc) 40 -
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (I C = 20mAdc, V CE = 10Vdc, f= 100MHz) fT 250 - MHz
SWITCHING CHARACTERISTICS
Delay Time td - 15
(V CC = 30Vdc, V EB = 2.0Vdc, I C = 150mAdc, I B1 = 15mAdc) ns
Rise Time tr - 20
<300ms,Duty Cycle<
Note : Pulse Test: Pulse Width- -2.0%
RATING AND CHARACTERISTICS CURVES ( 2N4401 )
O
25 C 100OC
30 10
7.0
VCC = 30V
20 5.0 IC/IB = 10
Cobo 3.0
CAPACITANCE (pF)
QT
Q, CHARGE (nC)
2.0
10
1.0
7.0
0.7
5.0 0.5
Ccb 0.3
3.0 0.2 QA
2.0 0.1
0.1 0.2 0.3 1.0 2.0 3.0 5.0 10 20 30 50 10 20 30 50 70 100 200 300 500
REVERSE VOLTAGE (V) IC, COLLECTOR CURRENT (mA)
Figure 1. Capacitances Figure 2. Charge Data
100 100
IC/IB=10 VCC= 30V
70 70
tr IC/IB=10
50 50
tr@ VCC= 30V
tf
t, TIME (ns)
t, TIME (ns)
10 10
7.0 7.0
5.0 5.0
10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 3. Turn-On Time Figure 4. Rise and Fall Times
300 100
ts'=ts -1/8tf
70 VCC= 30V
IB1=IB2 IB1=IB2
200
IC/IB= 10 to 20 50 IC/IB= 20
ts', STORAGE TIME (ns)
30
100
20 IC/IB=10
70
50 10
7.0
30 5.0
10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
10 10
IC=1.0mA, RS = 150 W f = 1.0 kHz
IC=500uA, RS = 200 W RS = OPTIMUM
8.0 8.0
IC=100uA, RS = 2.0 kW SOURCE
IC=50uA, RS = 4.0kW
RS = RESISTANCE IC=100uA
6.0 6.0 IC=500uA
IC=1.0mA
4.0 4.0
2.0 2.0
0 0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k
f, FREQUENCY (KHz) RS, SOURCE RESISTANCE (OHMS)
Figure 7.Frequency Effects Figure 8.Source Resistance Effects
300 400
300 4401 UNIT 1
200
hje, INPUT IMPEDANCE (OHMS)
4401 UNIT 2
200
hfe, CURRENT GAIN
100
100
4401 UNIT 1
70 80
4401 UNIT 2
50 60
40
30 30
20 20
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 9.Cuttent Gain Figure 10.Input Impedance
10 100
7.0
5.0 50
4401 UNIT 1
COEFFICIENT (mV/ oC)
20
2.0
10
1.0 4401 UNIT 1
5.0
0.7 4401 UNIT 2
0.5
2.0
0.3
0.2 1.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
3.0
VCE = 1.0V
hFE, NORMALIZED CURRENT GAIN
1.0
25 C
O
0.7
0.5 -55 C
O
0.3
0.2
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
1.0
VCE, COLLECTOR - EMITTER VOLTAGE (V)
TJ = 25 C
O
0.8
0.6
IC = 1.0mA 10 mA 100 mA 500 mA
0.4
0.2
0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
IB, BASE CURRENT (mA)
Figure 14. Collector Saturation Region
1.0 + 0.5
TJ = 25 C
O
VBE(sat) @ IC/IB = 10 0
0.8 QVC for VCE(sat)
COEFFICIENT (mV/ C)
O
-0.5
0.6 VBE @ VCE= 10V
VOLTAGE (V)
-1.0
0.4
-1.5
0 -2.5
0.1 0..2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.1 0..2 0.5 1.0 2.0 5.0 10 20 50 100 200 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
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