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2N440 Transistor References

This document provides information about the 2N4401 bipolar transistor, including its maximum ratings, electrical characteristics, and timing diagrams. It specifies parameters such as power dissipation, current and voltage limits, gain, capacitance, and switching times.

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Jose Morales
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0% found this document useful (0 votes)
32 views6 pages

2N440 Transistor References

This document provides information about the 2N4401 bipolar transistor, including its maximum ratings, electrical characteristics, and timing diagrams. It specifies parameters such as power dissipation, current and voltage limits, gain, capacitance, and switching times.

Uploaded by

Jose Morales
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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2N4401

TO - 92 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)

0.18 (4.6) 0.14 (3.6)


FEATURES
* Power dissipation
O
PCM: 0.6 W(Tamb=25 C)

min. 0.49 (12.5) 0.18 (4.6)


* Collector current
ICM: 0.6 A
* Collector-base voltage
V(BR)CBO: 60 V
* Operating and storage junction temperature range
TJ,Tstg: -55OC to+150OC

MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram

max. ∅
0.022 (0.55)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.098 (2.5)


Dimensions in inches
Ratings at 25 o C ambient temperature unless otherwise specified.
and (millimeters)
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
(TO-92)
Bottom

MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted)


O

RATINGS SYMBOL VALUE UNITS

Max. Steady State Power Dissipation (1) @TA=25 C Derate above 25 C


o
PD 600 mW
O

o
Max. Operating Temperature Range TJ 150 C
o
Storage Temperature Range TSTG -55 to +150 C

ELECTRICAL CHARACTERISTICS ( @ TA = 25 C unless otherwise noted)


O

CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNITS


o
Thermal Resistance Junction to Ambient R qJA - - 417 C/W

Notes : 1. Alumina=0.4*0.3*0.024in.99.5% alumina 2010-5


2. "Fully ROHS Compliant", "100% Sn plating (Pb-free)".
ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted)

Chatacteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1) (I C = 1.0 mAdc, I B = 0) V(BR)CEO 40 - Vdc

Collector-Base Breakdown Voltage (I C = 0.1uAdc, I E = 0) V(BR)CBO 60 - Vdc

Emitter-Base Breakdown Voltage (I E = 0.1uAdc, I C = 0) V(BR)EBO 6.0 - Vdc

Base Cutoff Current (V CE = 35Vdc, V BE(off) = 0.4Vdc) IBEV - 0.1 uAdc

Collector Cutoff Current (V CE = 35Vdc, V EB = 0.4Vdc) ICEX - 0.1 uAdc

ON CHARACTERISTICS(1)
DC Current Gain (I C = 0.1mAdc, V CE = 1.0Vdc) 20 -

(I C = 1.0mAdc, V CE = 1.0Vdc) 40 -

(I C = 10mAdc, V CE = 1.0Vdc) hFE 80 - -

(I C = 150mAdc, V CE = 1.0Vdc) 100 300

(I C = 500mAdc, V CE = 2.0Vdc) 40 -

Collector-Emitter Saturation Voltage (1) (I C = 150mAdc, I B = 15mAdc) - 0.4


VCE(sat) Vdc
(I C = 500mAdc, I B = 50mAdc) - 0.75

Base-Emitter Saturation Voltage (1) (I C = 150mAdc, I B = 15mAdc) 0.75 0.95


VBE(sat) Vdc
(I C = 500mAdc, I B = 50mAdc) - 1.2

SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (I C = 20mAdc, V CE = 10Vdc, f= 100MHz) fT 250 - MHz

Output Capacitance (V CB = 5.0Vdc, I E = 0, f= 1.0MHz) Ccb - 6.5 pF

Input Capacitance (V EB = 0.5Vdc, I C = 0, f= 1.0MHz) Ceb - 30 pF

Input lmpedance (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz) hie 1.0 15 kohms

Voltage Feedback Ratio (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz) hre 0.1 8.0 X 10 -4

Small-Signal Current Gain (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz) hfe 40 500 -

Output Admittance (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz) hoe 1.0 30 umhos

SWITCHING CHARACTERISTICS
Delay Time td - 15
(V CC = 30Vdc, V EB = 2.0Vdc, I C = 150mAdc, I B1 = 15mAdc) ns
Rise Time tr - 20

Storage Time ts - 225


(V CC = 30Vdc, I C = 150mAdc, I B1 = I B2 = 15mAdc) ns
Fall Time tf - 30

<300ms,Duty Cycle<
Note : Pulse Test: Pulse Width- -2.0%
RATING AND CHARACTERISTICS CURVES ( 2N4401 )
O
25 C 100OC

30 10
7.0
VCC = 30V
20 5.0 IC/IB = 10
Cobo 3.0
CAPACITANCE (pF)

QT

Q, CHARGE (nC)
2.0
10
1.0
7.0
0.7
5.0 0.5

Ccb 0.3
3.0 0.2 QA

2.0 0.1
0.1 0.2 0.3 1.0 2.0 3.0 5.0 10 20 30 50 10 20 30 50 70 100 200 300 500
REVERSE VOLTAGE (V) IC, COLLECTOR CURRENT (mA)
Figure 1. Capacitances Figure 2. Charge Data
100 100
IC/IB=10 VCC= 30V
70 70
tr IC/IB=10
50 50
tr@ VCC= 30V
tf
t, TIME (ns)

t, TIME (ns)

30 tr@ VCC= 10V 30


td@ VEB= 2.0V
20 td@ VEB= 0V 20

10 10
7.0 7.0
5.0 5.0
10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 3. Turn-On Time Figure 4. Rise and Fall Times

300 100
ts'=ts -1/8tf
70 VCC= 30V
IB1=IB2 IB1=IB2
200
IC/IB= 10 to 20 50 IC/IB= 20
ts', STORAGE TIME (ns)

tf, FALL TIME (ns)

30
100
20 IC/IB=10

70

50 10
7.0
30 5.0
10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 5. Storage Time Figure 6. Fall Time


RATING AND CHARACTERISTICS CURVES ( 2N 4401 )

10 10
IC=1.0mA, RS = 150 W f = 1.0 kHz
IC=500uA, RS = 200 W RS = OPTIMUM
8.0 8.0
IC=100uA, RS = 2.0 kW SOURCE

NF, NOISE FIGURE (dB)


IC=50uA
NF, NOISE FIGURE (dB)

IC=50uA, RS = 4.0kW
RS = RESISTANCE IC=100uA
6.0 6.0 IC=500uA
IC=1.0mA

4.0 4.0

2.0 2.0

0 0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k
f, FREQUENCY (KHz) RS, SOURCE RESISTANCE (OHMS)
Figure 7.Frequency Effects Figure 8.Source Resistance Effects
300 400
300 4401 UNIT 1
200
hje, INPUT IMPEDANCE (OHMS)

4401 UNIT 2
200
hfe, CURRENT GAIN

100
100
4401 UNIT 1
70 80
4401 UNIT 2
50 60

40
30 30

20 20
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 9.Cuttent Gain Figure 10.Input Impedance

10 100
7.0
5.0 50
4401 UNIT 1
COEFFICIENT (mV/ oC)

3.0 4401 UNIT 2


V, VOLTAGE (V)

20
2.0
10
1.0 4401 UNIT 1
5.0
0.7 4401 UNIT 2
0.5
2.0
0.3
0.2 1.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 11.Voltage Feedback Ratio Figure 12.Temperature Coefficients


RATING AND CHARACTERISTICS CURVES ( 2N 4401 )

3.0
VCE = 1.0V
hFE, NORMALIZED CURRENT GAIN

2.0 VCE = 10V


TJ = 125 C
O

1.0
25 C
O

0.7

0.5 -55 C
O

0.3

0.2
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
1.0
VCE, COLLECTOR - EMITTER VOLTAGE (V)

TJ = 25 C
O

0.8

0.6
IC = 1.0mA 10 mA 100 mA 500 mA

0.4

0.2

0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
IB, BASE CURRENT (mA)
Figure 14. Collector Saturation Region

1.0 + 0.5
TJ = 25 C
O

VBE(sat) @ IC/IB = 10 0
0.8 QVC for VCE(sat)
COEFFICIENT (mV/ C)
O

-0.5
0.6 VBE @ VCE= 10V
VOLTAGE (V)

-1.0
0.4
-1.5

0.2 VCE(sat) @ IC/IB = 10 -2.0 QVB for VBE

0 -2.5
0.1 0..2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.1 0..2 0.5 1.0 2.0 5.0 10 20 50 100 200 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 15. "ON" Voltages Figure 16. Temperature Coefficients


DISCLAIMER NOTICE

Rectron Inc reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-
lity for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" paramet-
ers which may be included on RECTRON data sheets and/ or specifications ca-
n and do vary in different applications and actual performance may vary over ti-
me. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.

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ted applications where a failure or malfunction of component or circuitry may di-
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such applications do so at their own risk and shall agree to fully indemnify Rect-
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