UNIT WISE NOTES

UNIT 1

Semiconductors
• Materials that permit flow of electrons are called conductors (e.g., gold,
silver, copper, etc.).
• Materials that block flow of electrons are called insulators (e.g., rubber,
glass, Teflon, mica, etc.).
• Materials whose conductivity falls between those of conductors and
insulators are called semiconductors.
• Semiconductors are “part-time” conductors whose conductivity can be
controlled.
• There are two types of semiconductors (i) Elemental Semiconductors and
(ii) Compound semiconductors.
• Elemental semiconductors are usually Group IV elements of Periodic
Table.
• Silicon and Germanium are two very popular elemental semiconductors.
Their atomic numbers are 14 and 32 respectively.
• They are tetravalent elements i.e having 4 valence electrons.
• Atoms in a pure silicon wafer contains four electrons in outer orbit (called
valence electrons). – Germanium is another semiconductor material with
four valence electrons.
• In the crystalline lattice structure of Si, the valence electrons of every Si
atom are locked up in covalent bonds with the valence electrons of four
neighbouring Si atoms. In pure form, Si wafer does not contain any free
charge carriers.
• An applied voltage across pure Si wafer does not yield electron flow
through the wafer. A pure Si wafer is said to act as an insulator.
• Silicon is the most common material used to build semiconductor
devices.
• Si is the main ingredient of sand and it is estimated that a cubic mile of
seawater contains 15,000 tons of Si.
 N-Type Semiconductor
• Pentavalent impurities such as phosphorus, arsenic, antimony, and
bismuth have 5 valence electrons.
• When phosphorus impurity is added to Si, every phosphorus atom’s four
valence electrons are locked up in covalent bond with valence electrons of
four neighbouring Si atoms. However, the 5th valence electron of
phosphorus atom does not find a binding electron and thus remains free to
float.
• When a voltage is applied across the silicon-phosphorus mixture, free
electrons migrate toward the positive voltage end.
• When phosphorus is added to Si to yield the above effect, we say that Si
is doped with phosphorus. The resulting mixture is called N-type silicon
(N: negative charge carrier silicon).
• The pentavalent impurities are referred to as donor impurities.
• In an n-type material, the electron is called the majority carrier and the
hole the minority carrier.

P-Type Semiconductor
• Trivalent impurities e.g., boron, aluminium, indium, and gallium have 3
valence electrons.
• When boron is added to Si, every boron atom’s three valence electrons
are locked up in covalent bond with valence electrons of three
neighbouring Si atoms. However, a vacant spot “hole” is created within
the covalent bond between one boron atom and a neighbouring Si atom.
• The holes are considered to be positive charge carriers. When a voltage is
applied across the silicon-boron mixture, a hole moves toward the
negative voltage end while a neighbouring electron fills in its place.
• When boron is added to Si to yield the above effect, we say that Si is
doped with boron. The resulting mixture is called P-type silicon (P:
positive charge carrier silicon).
• The trivalent impurities are referred to as acceptor impurities.

• The hole of boron atom points towards the negative terminal.

• The electron of neighbouring silicon atom points toward positive
terminal.
• The electron from neighbouring silicon atom falls into the boron atom
filling the hole in boron atom and creating a “new” hole in the silicon
atom.
• It appears as though a hole moves toward the negative terminal.
• In a p-type material the hole is the majority carrier and the electron is the
minority carrier.

PN Junction Diode
• Now that both n - and p -type materials are available, we can construct our
first solid-state electronic device: The PN Junction diode.

No Applied Bias ( VD = 0 V)

• At the instant the two materials are “joined” the electrons and the holes in
the region of the junction will combine, resulting in a lack of free carriers
in the region near the junction.
• This region of uncovered positive and negative ions is called the depletion
region due to the “depletion” of free carriers in the region.
• The term bias refers to the application of an external voltage across the
two terminals of the device to extract a response.
• It is clear that the applied voltage is 0 V (no bias) and the resulting current
is 0 A, much like an isolated resistor.
• Under no-bias conditions, any minority carriers (holes) in the n -type
material that find themselves within the depletion region for any reason
whatsoever will pass quickly into the p -type material and vice versa.
• The majority carriers (electrons) of the n -type material must overcome
the attractive forces of the layer of positive ions in the n -type material
and the shield of negative ions in the p -type material to migrate into the
area beyond the depletion region of the p -type material.
• In the absence of an applied bias across a semiconductor diode, the net
flow of charge in one direction is zero.

Reverse-Bias Condition ( VD = 0 V)
• If an external potential of V volts is applied across the p – n junction such
that the positive terminal is connected to the n -type material and the
negative terminal is connected to the p -type material.
• The number of uncovered positive ions in the depletion region of the n
type material will increase due to the large number of free electrons
drawn to the positive potential of the applied voltage. For similar reasons,
the number of uncovered negative ions will increase in the p -type
material.
• The net effect is a widening of the depletion region. This widening of the
depletion region will establish too great a barrier for the majority carriers
to overcome, effectively reducing the majority carrier flow to zero.
• Number of minority carriers, however, entering the depletion region will
not change, resulting in minority-carrier flow.
• The current that exists under reverse-bias conditions is called the reverse
saturation current.

Forward-Bias Condition ( VD≥ 0 V)

• A forward-bias or “on” condition is established by applying the positive

potential to the p -type material and the negative potential to the n -type
material.
• The application of a forward-bias potential VD will “pressure” electrons in
the n -type material and holes in the p -type material to recombine with
the ions near the boundary and reduce the width of the depletion region.
• The reduction in the width of the depletion region has resulted in a heavy
majority flow across the junction. An electron of the n -type material now
“sees” a reduced barrier at the junction due to the reduced depletion
region and a strong attraction for the positive potential applied to the p
type material.

• As the applied bias increases in magnitude, the depletion region will

continue to decrease in width until a flood of electrons can pass through
the junction, resulting in an exponential rise in current.
• It can be demonstrated through the use of solid-state physics that the
general characteristics of a semiconductor diode can be defined by the
 following equation, referred to as Shockley’s equation, for the forward-
and reverse-bias regions:

where Is is the reverse saturation current VD is the applied forward-bias

voltage across the diode n is an ideality factor, which is a function of the
operating conditions and physical construction; it has a range between 1
and 2 depending on a wide variety of factors.
• The voltage VT in is called the thermal voltage and is determined by

where k is Boltzmann’s constant 1.38 X 10-23 J/K,

TK is the absolute temperature in kelvins q is the
magnitude of electronic charge 1.6 X 10-19 C

V-I Characteristics

Breakdown Region (Avalanche & Zener Breakdown)

• In tens of volts in the negative region, there is a point where the
application of too negative a voltage with the reverse polarity will result
in a sharp change in the characteristics, as shown in above Fig.
 • The current increases at a very rapid rate in a direction opposite to that of
the positive voltage region. The reverse-bias potential that results in this
dramatic change in characteristics is called the breakdown potential.
• As the voltage across the diode increases in the reverse-bias region, the
velocity of the minority carriers responsible for the reverse saturation
current Is will also increase. Eventually, their velocity and associated
kinetic energy will be sufficient to release additional carriers through
collisions with otherwise stable atomic structures.
• That is, an ionization process will result whereby valence electrons absorb
sufficient energy to leave the parent atom. These additional carriers can
then aid the ionization process to the point where a high avalanche current
is established and the avalanche breakdown region determined.
• The avalanche region can be brought closer to the vertical axis by
increasing the doping levels in the p - and n -type materials. However, as
breakdown voltage decreases to very low levels, such as - 5 V, another
mechanism, called Zener breakdown , will contribute to the sharp change
in the characteristic.
• It occurs because there is a strong electric field in the region of the
junction that can disrupt the bonding forces within the atom and
“generate” carriers.
• The maximum reverse-bias potential that can be applied before entering
the breakdown region is called the peak inverse voltage (referred to
simply as the PIV rating) or the peak reverse voltage (denoted the PRV
rating).

Diode Equivalent Circuits

Ideal Diode:

• When diode is forward biased, resistance offered is zero,

• When it is reverse biased resistance offered is infinity. It acts as a perfect
switch.

The characteristic and the equivalent circuit of the diode

Second Approximation:

• When forward voltage is more than 0.7 V, for Si diode then it conducts
and offers zero resistance. The drop across the diode is 0.7V.
• When reverse biased it offers infinite resistance.

The characteristic and the equivalent circuit is shown

 3rd Approximation:

• When forward voltage is more than 0.7 V, then the diode conducts and
the voltage drop across the diode becomes 0.7 V and it offers resistance
Rf (slope of the current).
The output characteristic and the equivalent circuit is shown

Diode Applications
SERIES DIODE CONFIGURATIONS
• The primary purpose of this text is to develop a general knowledge of the
behaviour, capabilities, and possible areas of application of a device in a
manner that will minimize the need for extensive mathematical
developments.
• For all the analysis to follow in this chapter it is assumed that The forward
resistance of the diode is usually so small compared to the other series
elements of the network that it can be ignored.
• In general, a diode is in the “on” state if the current established by the
applied sources is such that its direction matches that of the arrow in the
diode symbol, and VD = 0.7 V for silicon, VD = 0.3 V for germanium.

Series Diode Configuration

• If a diode is in the “on” state, one can place a 0.7-V drop across the
element. (E > 0.7V)

• By applying KVL in above circuit

VR = E – 0.7V
IR = ID = VR /R

• If a diode is in the “off ” state, one can place open circuit across the
element. (E < 0.7V)

• IR = ID = 0 & VR = 0V

PARALLEL CONFIGURATION
The methods applied in above Section can be extended to the analysis of
parallel configurations.

• through each diode in the same direction as shown in above Fig. Since
For the applied voltage the “pressure” of the source acts to establish a
current the resulting current direction matches that of the arrow in each
diode symbol and the applied voltage is greater than 0.7 V, both diodes
are in the “on” state. The voltage across parallel elements is always the
same and
VO = 0.7 V

I1 = (E – VO)/R = (10 – 0.7)/0.33 = 28.18 mA

 This example demonstrates one reason for placing diodes in parallel. If
the current rating of the diodes of Fig. is only 20 mA, a current of 28.18
mA would damage the device if it appeared alone in Fig. By placing two
in parallel, we limit the current to a safe value of 14.09 mA with the same
terminal voltage.

RECTIFIERS
• A Rectifier is an electrical device that is made of one or more than one
diodes that converts the alternating current (AC) into direct current
(DC). It is used for rectification where the process below shows that how
it convert AC into DC.
• Rectification is the process of conversion of the alternating current
(which periodically changes direction) into direct current (flow in a single
direction).
• The rectifiers are classified into two categories.
Half wave rectifier
Full wave rectifier

Half wave rectifier

Vi = Vm Sinὡt
• During positive half cycle, Diode is ON and output voltage i.e. voltage
across load is same as input voltage

Vo = Vi = Vm Sinὡt

• During negative half cycle, Diode is OFF and output voltage

Vo = 0

Output of Halfwave Rectifier

• Different parameters for half wave rectifier is given below The average of
load current (IDC) : Let, the load current be IL = Im sinωt

• The rms value of the load current (Irms )

• Ripple factor of half wave rectifier

 FULL WAVE DIODE RECTIFIER
• The diode works only when it is in forward bias, only the current flows
through p-n junction diode and output current across the load is found.
• If two diodes are connected in such a way that one diode conducts during
one half of the input voltage and the other one conducts during the next
half of the cycle, in a unidirectional can flow through the load during the
full cycle of the impact voltage. This is known as full wave rectifier .

Center-Tapped Full Wave Rectifier

• During the positive cycle of Vi applied to the primary of the transformer,

D1 is ON so it replaced by short circuit equivalent and D2 is OFF so it is
replaced by open-circuit equivalent.

Vo = Vi

• During the negative cycle of Vi applied to the primary of the transformer,

D2 is ON so it replaced by short circuit equivalent and D1 is OFF so it is
replaced by open-circuit equivalent.

Vo = - Vi
 Input- Output Waveforms
Different parameters for Full wave rectifier is given below. The average
of load current (Idc) : Let, the load current be IL = Im sinωt

Bridge Rectifier

During positive half of input Vi , D2 & D3 are On and D1 & D4 are Off
 then
Vo = Vi

During negative half of input Vi , D2 & D3 are Off and D1 & D4 are On

Then
Vo = - Vi

CLIPPERS
• Clippers are networks that employ diodes to “clip” away a portion of an
input signal without distorting the remaining part of the applied
waveform.
• The half-wave rectifier of discussed above is an example of the simplest
form of diode clipper consisting of one resistor and a diode. Depending
on the orientation of the diode, the positive or negative region of the
applied signal is “clipped” off.
• There are two general categories of clippers: series and parallel.
• The series configuration is defined as one where the diode is in series
with the load, whereas the parallel variety has the diode in a branch
parallel to the load.

Series Clipper
Input is in series with diode so it is called series clipper.
When Vi > V, diode is ON. Replace diode with short circuit equivalent
and apply KVL

KVL in above loop

Vi – V – Vo = 0
So Vo = (Vi – V)

When Vi < V, diode is ON. Replace diode with open circuit equivalent
and apply KVL

Current is zero so Vo = 0
 • Certain portion of input is clipped by this circuit.

Parallel Clipper
Input is in parallel with diode so these types of clipper are called parallel
clipper or shunt clipper.

We will assume our diode to be an ideal diode.

When Vi > 4V, diode is OFF and is replaced by open circuit equivalent

Vo
=0V

When Vi < 4V, diode is OFF and is replaced by short circuit equivalent
Apply KVL in the above circuit and ignore Vk (0.7V)

Vo = 4V

That part of Vi less than 4V is clipped by this clipper.

 CLAMPERS
• A clamper is a network constructed of a diode, a resistor, and a capacitor
that shifts a waveform to a different dc level without changing the
appearance of the applied signal.
• Additional shifts can also be obtained by introducing a dc supply to the
basic structure.
• The chosen resistor and capacitor of the network must be chosen such that
the time constant determined by t RC is sufficiently large to ensure that
the voltage across the capacitor does not discharge significantly during
the interval the diode is nonconducting.
• Throughout the analysis we assume that for all practical purposes the
capacitor fully charges or discharges in five time constants.
• Clamping networks have a capacitor connected directly from input to
output with a resistive element in parallel with the output signal.
• The diode is also in parallel with the output signal but may or may not
have a series dc supply as an added element.

Clamper
Analysis
There is a sequence of steps that can be applied to help make the analysis
straightforward
Step 1: Start the analysis by examining the response of the portion of the
input signal that will forward bias the diode.
Step 2: During the period that the diode is in the “on” state, assume that
the capacitor will charge up instantaneously to a voltage level determined
by the surrounding network.

During positive half cycle Diode is On, so we start analysis with positive
cycle. Replace Diode with short circuit equivalent and apply KVL to find
Vc (voltage across capacitor) & Vo (Output Voltage)
 V – Vc = 0 volt
Vc = V
KVL in other loop
Vo = 0 Volt
Step 3: Assume that during the period when the diode is in the “off” state
the capacitor holds on to its established voltage level.
Step 4: Throughout the analysis, maintain a continual awareness of the
location and defined polarity for v o to ensure that the proper levels are
obtained.
During negative half cycle Diode is off, diode is replaced with open
circuit equivalent. Change the polarity of input V but don’t change
polarity as well as magnitude of Vc ( Voltage across capacitor).

Apply KVL in outermost loop and find Vo

-V – Vc-Vo = 0
Vo = -Vc - V (Vc = V)
Vo = - 2V

Step 5: Check that the total swing of the output matches that of the input.
This is a property that applies for all clamping networks, giving an
excellent check on the results obtained.
 Different combinations of Clampers with their outputs

VOLTAGE-MULTIPLIER CIRCUITS

Voltage Doubler

Fig. is a half-wave voltage doubler

• During the positive voltage half cycle across the transformer, secondary
diode D1 conducts (and diode D2 is cut off), charging capacitor C1 up to
the peak rectified voltage ( V m ).
• Diode D1 is ideally a short during this half-cycle, and the input voltage
charges capacitor C1 to V m with the polarity shown in Fig below.
 • During the negative half-cycle of the secondary voltage, diode D1 is cut
off and diode D2 conducts charging capacitor C2 .
• Since diode D2 acts as a short during the negative half-cycle (and diode
D1 is open), we can sum the voltages around the outside loop.

• On the next positive half-cycle, diode D2 is nonconducting and capacitor

C2 will discharge through the load.
• If no load is connected across capacitor C2 , both capacitors stay
charged— C1 to V m and C2 to 2 V m .
• If there is a load connected to the output of the voltage doubler, the
voltage across capacitor C2 drops during the positive half-cycle (at the
input) and the capacitor is recharged up to 2 V m during the negative half
cycle.

Light Emitting Diode (LED)

Definition:

The LED is a PN-junction diode which emits light when an electric current passes
through it in the forward direction. In the LED, the recombination of the charge carrier
takes place. The electron from the N-side and the hole from the P-side are combined and
gives the energy in the form of heat and light. The LED is made of semiconductor
material which is colourless, and the light is radiated through the junction of the diode.

The LEDs are extensively used in segmental and dot matrix displays of numeric and
alphanumeric characters. The several LEDs are used for making the single line segment
while for making the decimal point single LED is used.
Construction of LED

The recombination of the charge carrier occurs in the P-type material, and hence
Pmaterial is the surface of the LED. For the maximum emission of light, the anode is
deposited at the edge of the P-type material. The cathode is made of gold film, and it is
usually placed at the bottom of the N-region. This gold layer of cathode helps in
reflecting the light to the surface.

The gallium arsenide phosphide is used for the manufacturing of LED which emits red or
yellow light for emission. The LED are also available in green, yellow amber and red in
colour.

The simple transistor can be used for off/on of a LED as shown in the figure above. The
base current IB conducts the transistor, and the transistor conducts heavily. The
resistance RC limits the current of the LED.
Working of LED

The working of the LED depends on the quantum theory. The quantum theory states
that when the energy of electrons decreases from the higher level to lower level, it emits
energy in the form of photons. The energy of the photons is equal to the gap between the
higher and lower level

The LED is connected in the forward biased, which allows the current to flow in the
forward direction. The flow of current is because of the movement of electrons in the
opposite direction. The recombination shows that the electrons move from the
conduction band to valence band and they emit electromagnetic energy in the form of
photons. The energy of photons is equal to the gap between the valence and the
conduction band.

Advantages of LED in electronic displays

The following are the major advantages of the LED in an electronics display.

1. The LEDs are smaller in size, and they can be stacked together to form numeric
and alphanumeric displays in the high-density matrix.

2. The intensity of the light output of the LED depends on the current flowing

through it. The intensity of their light can be controlled smoothly.

3. The LEDs are available which emit light in the different colours like red, yellow,
green and amber.

4. The on and off time or switching time of the LED is less than 1 nanoseconds.

Because of this, the LEDs are used for the dynamic operation.

5. The LEDs are very economical and give the high degree of reliability because

they are manufactured with the same technology as that of the transistor.
 6. The LEDs are operated over a wide range of temperature say 0° – 70°. Also, it is
very durable and can withstand shock and variation.

7. The LEDs have a high efficiency, but they require moderate power for
operation. Typically, the voltage of 1.2V and the current of 20mA is required for
full brightness. Therefore, it is used in a place where less power is available.

Disadvantages of LED

The LED consumes more power as compared to LCD, and their cost is high. Also, it is not
used for making the large display.

Home Work:

1. Difference Between LED & Diode

2. Difference Between LED & LCD

Comparison Chart of LED & Diode

Basis for LED Diode

Comparison

Definition The type of diode which when It is a semiconductor diode placed in an

electric field emits which conducts only in one
light. direction.

Symbol

Material GaAs (Gallium Arsenide) and GaP Silicon and Germanium

(Gallium Phosphide)

Principle Converts energy into light. Converts energy into heat.

Reverse Low High

Breakdown
Voltage value

On-state 1.2v – 2.0v 0.7v for silicon and 0.3v for

voltage range germanium.
 Application Rectification i.e., converts the ac Emits light
to dc.

Uses Indicators in seven segment displays, use Rectifiers, voltage multipliers,

as light source. clamping, etc.

Comparison Chart of LED & Lcd

Basis For LED LCD

Comparison

Definition PN-Junction device which discharge It is an optical device used for

visible lights when an electrical displaying the information in the
charge passes through it. form of text and images.

Stand For Light Emitting Diode Liquid Crystal Display

Backlight No backlight Cold cathode fluorescent lamp

provides backlight.

Resolution High Low

Power More Less

Requirement

Display Area Small Large

Cost High Low

Material Gallium arsenide phosphide. Liquid crystals and glass

electrodes.

Switching Time Fast Slow

Direct Current Do not effects. Reduces Life Span

 Contrast Ratio Low High

Mercury Not used Used

Photodiode

Definition: A special type of PN junction device that generates current when exposed to
light is known as Photodiode. It is also known as a photodetector or photosensor. It
operates in reverse biased mode and converts light energy into electrical energy.

The figure below shows the symbolic representation of a photodiode:

Principle of Photodiode

It works on the principle of Photoelectric effect.

The operating principle of the photodiode is such that when the junction of this
twoterminal semiconductor device is illuminated then the electric current starts flowing
through it. Only minority current flows through the device when the certain reverse
potential is applied to it.

Construction of Photodiode

The figure below shows the constructional detail of a photodiode:

The PN junction of the device is placed inside a glass material. This is done in order to
allow the light energy to pass through it. As only the junction is exposed to radiation,
thus, the other portion of the glass material is painted black or is metallised.

The overall unit is of very small dimension, nearly about 2.5 mm.

It is noteworthy that the current flowing through the device is in micro-ampere and is
measured through an ammeter.

Operational Modes of Photodiode

Photodiode basically operates in two modes:

● Photovoltaic mode: It is also known as zero-bias mode because no external

reverse potential is provided to the device. However, the flow of minority
carriers will take place when the device is exposed to light.
● Photoconductive mode: When a certain reverse potential is applied to the
device then it behaves as a photoconductive device. Here, an increase in
depletion width is seen with the corresponding change in reverse voltage.

Let us now understand the detailed circuit arrangement and working of the photodiode.

Working of Photodiode

In the photodiode, a very small reverse current flows through the device that is termed
as dark current. It is called so because this current is totally the result of the flow of
minority carriers and is thus flows when the device is not exposed to radiation

The electrons present in the p side and holes present in n side are the minority carriers.
When a certain reverse-biased voltage is applied then minority carrier, holes from nside
experiences repulsive force from the positive potential of the battery.
Similarly, the electrons present in the p side experience repulsion from the negative
potential of the battery. Due to this movement electrons and holes recombine at the
junction resultantly in a depletion region at the junction.

Due to this movement, a very small reverse current flows through the device known as
dark current.

The combination of electron and hole at the junction generates a neutral atom at the
depletion. Due to which any further flow of current is restricted.

Now, the junction of the device is illuminated with light. As the light falls on the surface
of the junction, then the temperature of the junction gets increased. This causes the
electron and hole to get separated from each other.

At the two gets separated then electrons from n side gets attracted towards the positive
potential of the battery. Similarly, holes present in the p side get attracted to the
negative potential of the battery.

This movement then generates high reverse current through the device.

With the rise in the light intensity, more charge carriers are generated and flow through
the device. Thereby, producing a large electric current through the device.

This current is then used to drive other circuits of the system.

So, we can say the intensity of light energy is directly proportional to the current
through the device.

Only positive biased potential can put the device in no current condition in case of the
photodiode.

CHARACTERISTICS OF PHOTODIODE

The figure below shows the VI characteristic curve of a photodiode:

Here, the vertical line represents the reverse current flowing through the device and the
horizontal line represents the reverse-biased potential.

The first curve represents the dark current that generates due to minority carriers in the
absence of light.

As we can see in the above figure that all the curves show almost equal spacing in
between them. This is so because current proportionally increases with the luminous
flux.

The figure below shows the curve for current versus illumination:
It is noteworthy here that the reverse current does not show a significant increase with
the increase in the reverse potential.

Advantages of Photodiode

● It shows a quick response when exposed to light.

● Photodiode offers high operational speed.
● It provides a linear response.
● It is a low-cost device.

Disadvantages of Photodiode

● It is a temperature-dependent device. And shows poor temperature stability.

● When low illumination is provided, then amplification is necessary.

Applications of Photodiode

1. Photodiodes majorly find its use in counters and switching circuits.

2. Photodiodes are extensively used in an optical communication system.
3. Logic circuits and encoders also make use of photodiodes.

4. It is widely used in burglar alarm systems. In such alarm systems, until

exposure to radiation is not interrupted, the current flows. As the light energy
fails to fall on the device, it sounds the alarm.

In case of a typical photodiode, the normal reverse current is in the tens of microampere
range.

UNIT 2
Bipolar Junction Transistor

Transistor Construction

The transistor is a three-layer semiconductor device consisting of either

two n - and one p -type layers of material or two p - and one n -type
layers of material. The former is called an npn transistor , and the latter is
called a pnp transistor.
 pnp Transistor

npn Transistor

• The emitter layer is heavily doped, with the base and collector only
lightly doped.
• The outer layers have widths much greater than the sandwiched p - or n
type material. For the transistors shown in Fig. the ratio of the total width
to that of the center layer is 0.1500.001 150:1.
• The doping of the sandwiched layer is also considerably less than that of
the outer layers (typically, 1:10 or less). This lower doping level
decreases the conductivity (increases the resistance) of this material by
limiting the number of “free” carriers.
• The terminals have been indicated by the capital letters E for emitter , C
for collector and B for base.
• The abbreviation BJT, from bipolar junction transistor, is often applied to
this three-terminal device.
• The term bipolar reflects the fact that holes and electrons participate in
the injection process.

TRANSISTOR OPERATION
A transistor has two junctions-emitter junction and a collection junction.
• For the sake of clarity, the base region has been shown very wide.
(Remember, the base is actually made very narrow.)
• The battery VEE acts to forward bias the emitter junction, and the battery
VCC acts to reverse bias the collector junction.
• Switches S1 and S2 have been provided in the emitter and collector
circuits. When the two switches are open, the two junctions are unbiased.
We thus have depletion or space-charge regions at the two junctions.

• If we close the switch S1 and keep the switch S2 open, the emitter
junction will be forward biased as shown in Fig.
• The barrier at the emitter junction is reduced. Since the emitter and base
regions are just like those in a PN diode, we can expect a large current
due to forward biasing. This current consists of majority carriers diffusing
across the junction
• The total current flowing across the junction is the sum of the electron
diffusion current and the hole diffusion current

• Next, we close switch S2 and keep the switch S1 open in above Fig. The
collector junction is reverse biased. Very small current flows across this
 reverse-biased junction. The reverse leakage current is due to the
movement of minority carriers. These carriers are accelerated by the
potential barrier. This leakage current is very much temperature
dependent.
• The current flows into the collector lead and out of the base lead. There is
no emitter current (IE= 0). The small collector current is called the
collector leakage current.

• The emitter junction is forward biased (may be, by a few tenths of a volt).
The barrier potential is reduced. As such, majority charge carriers diffuse
across the junction.
• The resulting current consists of electrons travelling from the emitter to
the base and holes passing from the base to the emitter.
• As will soon be evident, only the electron current is useful in the action of
the transistor. Therefore, the electron current is made much larger than the
hole current. This is done by doping the base region more lightly than the
emitter region.
• In above Fig., we have shown electrons 1, 2, 3 and 4 crossing from the
emitter to the base, and hole 7 from the base to the emitter. The total sum
of these charge-carrier movements constitutes the emitter current I E. Only
a portion of this current is due to the movement of electrons I, 2, 3 and 4.
These are the electrons injected by the emitter into the base.
• The ratio of the electron current to the total emitter current is known as
emitter injection ratio, or the emitter efficiency. This ratio is denoted by
symbol γ ( Greek letter gamma). Typically, γ is equal to 0.995.
• Once the electrons are injected by the emitter into the base, they become
minority carriers (in the base region).
• The central idea in transistor action is that the base is made very narrow
(about 25 µm) and is very lightly doped. Because of this, most of the
minority carriers (electrons) travelling from the emitter end of the base
region to its collector end do not recombine with holes in this journey.
• Only a few electrons (like 3) may recombine with holes (like 6). The ratio
of the number of electrons arriving at collector to the number of emitted
electrons is known as the base transportation factor. It is designated by
symbol β.
• The collector current is less than the emitter current. There are two
reasons for this. First, a part of the emitter current consists of holes that do
not contribute to the collector current. Secondly, not all the electrons
injected into the base are successful in reaching the collector.
 Sign Conventions

NPN BJT PNP BJT

TRANSISTOR AMPLIFYING ACTION

• Though a transistor can perform a number of other functions, its main use
lies in amplifying electrical signals. Figure just below shows a basic
transistor amplifier.
• Here, the transistor (NPN) is connected in common-base configuration.
The emitter is the input terminal and the collector is the output terminal.
The transistor is biased to operate in the active region.

• When the signal Vs is superimposed on the dc voltage VEE , the emitter

voltage VEB vanes with time. As a result, the emitter current IE also varies
with time.
• Since the collector current is a function of the emitter current, a similar
variation occurs in the collector current Ic. This varying current passes
through the load resistor RL and a varying voltage is developed across it.
This varying voltage is the output voltage Vo. The output signal Vo is
many times greater than the input signal voltage Vs·
• The transistor's amplifying action is basically due to its capability of
transferring its signal current from a low resistance circuit to high
resistance circuit. Contracting the two terms transfer and resistor results in
the name transistor; that is transfer + resistor → transistor

TRANSISTOR CONFIGURATION
 Any of its three terminals can be made common to input and output. (This
common terminal is usually grounded or connected to the chassis.) The
connection is then described in terms of the common terminal.

Common Base Common Emitter Common Collector

• First figure is the base terminal has been made common to both input and
output. This connection is called common-base connection.
• The input signal is fed between the emitter and the base. The output signal
is developed between the collector and the base.
• By making the emitter or the collector common, we can have what are
known as common-emitter (CE) or common-collector (CC)
configurations, respectively.
• In all the configurations, the emitter-base junction is always
forwardbiased and the collector-base junction is always reverse-biased, to
keep it in the active region.
• In common-emitter configuration (second fig) the base is the input
terminal and the collector is the output terminal. The input signal is
connected between the base and the emitter and the load resistor is
connected between the collector and the emitter. The output appears
across this load resistor.
• Third figure shows common-collector (CC) configuration. Here, the input
signal is connected between the base and the collector. The output appears
between the emitter and the collector.
• This circuit is popularly known as emitter follower. The voltage gain of
this amplifier is poor (it never exceeds unity). But it has got an important
characteristic of having very high input resistance and very low output
resistance. This property of the emitter follower makes it very useful in
certain applications.
Field Effect Transistor: Construction and Characteristic of JFETs. Transfer Characteristic.
MOSFET (MOS) (Depletion and Enhancement) Type, Transfer Characteristic.

Introduction of Field Effect Transistor

The concept of the field effect transistor is based around the concept that charge on a nearby
object can attract charges within a semiconductor channel. It essentially operates using an
electric field effect - hence the name.

The FET transistors are voltage controlled devices, whereas the BJT transistors are current
controlled devices. The FET transistors have basically three terminals, such as Drain (D),
Source (S) and Gate (G) which are equivalent to the collector, emitter and base terminals in the
corresponding BJT transistor.
In BJT transistors the output current is controlled by the input current which is applied to the
base, but in the FET transistors the output current is controlled by the input voltage applied to
the gate terminal.

In the FET transistors the output current passes between the drain and source terminals and this
path is called channel and this channel may be made of either P-type or N-type semiconductor
materials. In BJT transistor a small input current operates the large load, but in FET a small
input voltage operates the large load at the output.

The BJT transistors are ‘bipolar’ devices because they operates with both types of charge
carriers, such as electrons and holes but the FET transistors are ‘unipolar’ devices because they
operate with the charge carriers of either electrons (for N-channel) or holes (for P-channel).

The FET transistors can be made smaller in size compared to BJT transistor and also they have
less power dissipation. Due to this high efficiency the FET transistors are used in many
electronic circuit applications by replacing the corresponding BJT transistors. These FET
transistors are very useful in the chip designing due to their low power consumption behavior.
Like BJT the FET transistors are also available in both P-channel and N-channel.

The FET transistors have high input impedance where as BJT has relatively low. Due to this
high impedance values the FET transistors are very sensitive to small input voltages.

Classification of Field Effect Transistor:-

The FET transistors are mainly classified into two types; they are Junction Field Effect
Transistor (JFET) and Insulated Gate FET (IG-FET) or Metal Oxide Semiconductor FET
(MOSFET).

Construction of JFET:

A JFET is a three terminal semiconductor device in which current conduction is by one type of
carrier i.e. electrons or holes.

The current conduction is controlled by means of an electric field between the gate and the
conducting channel of the device.
The JFET has high input impedance and low noise level.

Construction Details:
A JFET consists of a p-type or n-type silicon bar containing two pn junctions at the sides as
shown in fig.1.

Fig 1.(i) Fig 1.(ii)

The bar forms the conducting channel for the charge carriers.
If the bar is of p-type, it is called p-channel JFET as shown in fig.1(i) and if the bar is of ntype,
it is called n-channel JFET as shown in fig.1(ii).

The two PN junctions forming diodes are connected internally and a common terminal called
gate is taken out.

Other terminals are source and drain taken out from the bar as shown in fig.1.

Thus a JFET has three terminals such as , gate (G), source (S) and drain (D).

JFET Polarities

Fig.2 (i) shows the n-channel JFET polarities and fig.2 (ii) shows the p-channel JFET polarities.

Fig.2 (i) Fig.2 (ii)

In each case, the voltage between the gate and source is such that the gate is reverse biased.

The source and the drain terminals are interchangeable.

The following points may be noted:

1. The input circuit ( i.e. gate to source) of a JFET is reverse biased. This means that
the device has high input impedance.
2. The drain is so biased w.r.t. source that drain current ID flows from the source to
drain.
3. In all JFETs, source current IS is equal to the drain current i.e IS = ID.

Principle and Working of JFET

Principle of JEFT

Fig.3 shows the circuit of n-channel JFET with normal polarities.

The two pn junctions at the sides form two depletion layers.

The current conduction by charge carriers (i.e. electrons) is through the channel between the
two depletion layers and out of the drain.

The width and hence resistance of this channel can be controlled by changing the input voltage
VGS.
The greater the reverse voltage VGS, the wider will be the depletion layer and narrower will be
the conducting channel.
The narrower channel means greater resistance and hence source to drain current decreases.

Reverse will happen when VGS decreases.

Thus JFET operates on the principle that width and hence resistance of the conducting channel
can be varied by changing the reverse voltage VGS.
In other word, the magnitude of drain current ID can be changed by altering VGS.

Working of JEFT

The working of JFET can be explained as follows:

Case-i:
When a voltage VDS is applied between drain and source terminals and voltage on the gate is
zero as shown in fig.3(i), the two pn junctions at the sides of the bar establish depletion layers.
 Fig.3 (i)

The electrons will flow from source to drain through a channel between the depletion layers.

The size of the depletion layers determines the width of the channel and hence current
conduction through the bar.

Case-ii:
When a reverse voltage VGS is applied between gate and source terminals, as shown in fig.3(ii),
the width of depletion layer is increased.

fig.3(ii),

This reduces the width of conducting channel, thereby increasing the resistance of n-type bar.

Consequently, the current from source to drain is decreased.

On the other hand, when the reverse bias on the gate is decreased, the width of the depletion
layer also decreases.

This increases the width of the conducting channel and hence source to drain current.

A p-channel JFET operates in the same manner as an n-channel JFET except that channel
current carriers will be the holes instead of electrons and polarities of V GS and VDS are reversed.

Schematic Symbol of JFET

Fig.4 shows the schematic symbol of JFET.
 Fig.4

Difference Between JFET and BJT

The JFET differs from an ordinary BJT in the following ways:

1. In a JFET, there is only one type of carrier,i.e. holes in p-type channel and electrons
in n-type channel. For this reason it is also called unipolar transistor.However, in
an ordinary BJT, both electrons and holes play role in conduction. Therefore, it is
called as bipolar transistor.
2. As the input circuit of a JFET is reverse biased, therefore, it has a high input
impedance. However, the input circuit of a BJT is forward biased and hence has
low input impedance.
3. The primary functional difference between the JFET and BJT is that no current
enters the gate of JFET. However, in typical BJT base current might be a few µA.
4. A BJT uses the current into its base to control a large current between collector
and emitter. Whereas a JFET uses voltage on the gate terminal to control the
current between drain and source.
5. In JFET, there is no junction. Therefore, noise level in JFET is very small.

Advantages of JFET
A JFET is a voltage controlled, constant current device in which variation in input voltage
control the output current. Some of the advantages of JFET are:

1. It has a very high input impedance. This permits high degree of isolation between
the input and output circuits.
2. The operation of a JFET depends upon the bulk material current carriers that do
not cross junctions. Therefore, the inherent noise of tubes and those of transistors
are not present in a JFET.
3. A JFET has a negative temperature co-efficient of resistance. This avoids the risk
of thermal runaway.
4. A JFET has a very high-power gain. This eliminates the necessity of using driver
stages.
5. A JFET has a smaller size, longer life and high efficiency

Output Characteristics and transfer

characteristics of JFET
Output Characteristics of JFET
The curve between drain current, ID and drain-source voltage, VDS of a JFET at constant
gatesource voltage, VGS is known as output characteristics of JFET.

1. Drain Characteristic With Shorted-Gate

Fig.1 (i) shows the circuit diagram for determining the drain characteristic with shorted-gate
for an n-channel JFET. Fig.1(ii) shows the drain characteristic with shorted-gate.

Fig.1(i)

Fig.1 (ii)

when drain-source voltage VDS is zero, there is no attracting potential at the drain, so no current
flows inspite of the fact that the channel is fully open. So, drain current ID = 0.
For small applied voltage VDS, the n-type bar acts as a simple semiconductor resistor, and the
drain current increases linearly with the increase in VDS, upto the knee point.
This region, to the left of the knee point of the curve is called the channel ohmic region, as in
this region the JFET behaves like an ordinary resistor.
With the increase in drain current ID, the ohmic voltage drop between the source and channel
region reverse-biases the gate junction.
The reverse-biasing of the gate junction is not uniform throughout. The reverse bias is more at
the drain end than at the source end of the channel.

So with the increase in VDS, the conducting portion of the channel begins to constrict more at
the drain end. Eventually a voltage VDS is reached at which the channel is pinched off.
The drain current ID no longer increases with the increase in VDS. It approaches a constant
saturation value.

The value of voltage VDS at which the channel is pinched off i.e. all the free charges from the
channel get removed, and the drain current ID attains a constant value, is called the pinch-off
voltage Vp.
From point A (knee point) to the point B (pinch-off point) the drain current ID increases with
the increase In voltage VDS following a reverse square law.
The region of the characteristic in which drain current ID remains fairly constant is called the
pinch-off region. It is also sometimes called the saturation region or amplifier region.
In this region the JFET operates as a constant current device since drain current (or output
current) remains almost constant. It is the normal operating region of the JFET where it is used
as an amplifier.
The drain current in the pinch-off region with VGS = 0 is referred to the drain-source saturation
current, IDSS).
Drain current in the pinch-of region is given by Shockley’s equation:

Where ID = Drain current at given VGS

IDSS = Shorted – gate drain current
VGS = gate-source Voltage
VGS (off) = gate-source cut off voltage

If drain-source voltage, VDS is continuously increased, a stage comes when the gate-channel
junction breaks down. At this point current increases very rapidly. and the JFET may be
destroyed. This happens because the charge carriers making up the saturation current at the gate
channel junction accelerate to a high velocity and produce an avalanche effect.

2. Drain Characteristics With External Bias

The circuit diagram for determining the drain characteristics with different values of external
bias is shown in Fig.2(i). and a family of drain characteristics for different values of gate-source
voltage VGS is shown in Fig.2(ii).
 Fig.2 (i)

Fig.2 (ii)

It is observed that as the negative gate bias voltage V GS is increased;

(1) The maximum saturation drain current becomes smaller because the conducting channel
now becomes narrower.

(2) Pinch-off voltage is reached at a lower value of drain current ID than when VGS = 0. When
an external bias of, say – 1 V is applied between the gate and the source, the gate-channel
junctions are reverse-biased even when drain current, ID is zero. Hence the depletion regions
are already penetrating the channel to a certain extent when drain-source voltage, VDS is zero.
Due to this reason, a smaller voltage drop along the channel (i.e. smaller than that for VGS = 0)
will increase the depletion regions to the point where they pinch-off the current. Consequently,
the pinch-off voltage VP is reached at a lower drain current, ID.
(3) Value of drain-source voltage VDS for the avalanche breakdown of the gate junction is
reduced.
It is simply due to the fact that gate-source voltage, VGS keeps adding to the reverse bias at the
junction produced by current flow.

Transfer Characteristic of JFET

The transfer characteristic for a JFET can be determined experimentally, keeping drain-source
voltage, VDS constant and determining drain current, ID for various values of gate-source
voltage, VGS.
The circuit diagram is shown in fig.3 (i).
 fig.3 (i)

The curve is plotted between gate-source voltage, VGS and drain current, ID, as shown in fig.
3 (ii).

Fig.3 (ii)

It can be observed that:

(i) Drain current decreases with the increase in negative gate-source bias
(ii) Drain current, ID = IDSS when VGS = 0
(iii) Drain current, ID = 0 when VGS = VD
The transfer characteristic can also be derived from the drain characteristic by noting values of
drain current, ID corresponding to various values of gate-source voltage, VGS for a constant
drain-source voltage and plotting them.
It may be noted that a P-channel JFET operates in the same way and have the similar
characteristics as an N-channel JFET except that channel carriers are holes instead of electrons
and the polarities of VGS and VDS are reversed.

MOSFET (Metal Oxide Semiconductor Field Effect Transistor )

• As well as the Junction Field Effect Transistor (JFET), there is another type of Field
Effect Transistor available whose Gate input is electrically insulated from the main
current carrying channel and is therefore called an Insulated Gate Field Effect
Transistor.
 • The most common type of insulated gate FET which is used in many different types of
electronic circuits is called the Metal Oxide Semiconductor Field Effect Transistor
or MOSFET for short.

• The IGFET or MOSFET is a voltage controlled field effect transistor that differs from
a JFET in that it has a “Metal Oxide” Gate electrode which is electrically insulated from
the main semiconductor n-channel or p-channel by a very thin layer of insulating
material usually silicon dioxide, commonly known as glass.

• This ultra thin insulated metal gate electrode can be thought of as one plate of a
capacitor. The isolation of the controlling Gate makes the input resistance of the
MOSFET extremely high way up in the Mega-ohms ( MΩ ) region thereby making it
almost infinite.

• As the Gate terminal is electrically isolated from the main current carrying channel
between the drain and source, “NO current flows into the gate” and just like the JFET,
the MOSFET also acts like a voltage controlled resistor where the current flowing
through the main channel between the Drain and Source is proportional to the input
voltage. Also like the JFET, the MOSFETs very high input resistance can easily
accumulate large amounts of static charge resulting in the MOSFET becoming easily
damaged unless carefully handled or protected.

• Like the previous JFET tutorial, MOSFETs are three terminal devices with a Gate,
Drain and Source and both P-channel (PMOS) and N-channel (NMOS) MOSFETs are
available. The main difference this time is that MOSFETs are available in two basic
forms:

• Depletion Type – the transistor requires the Gate-Source voltage, ( VGS ) to switch
the device “OFF”. The depletion mode MOSFET is equivalent to a “Normally Closed”
switch.

• Enhancement Type – the transistor requires a Gate-Source voltage, ( VGS ) to switch

the device “ON”. The enhancement mode MOSFET is equivalent to a “Normally Open”
switch.

The symbols and basic construction for both configurations of MOSFETs are shown below.
• The four MOSFET symbols above show an additional terminal called the Substrate and
is not normally used as either an input or an output connection but instead it is used for
grounding the substrate. It connects to the main semiconductive channel through a diode
junction to the body or metal tab of the MOSFET.
• Usually in discrete type MOSFETs, this substrate lead is connected internally to the
source terminal. When this is the case, as in enhancement types it is omitted from the
symbol for clarification.
• The line in the MOSFET symbol between the drain (D) and source (S) connections
represents the transistors semiconductive channel. If this channel line is a solid
unbroken line then it represents a “Depletion” (normally-ON) type MOSFET as drain
current can flow with zero gate biasing potential.
• If the channel line is shown as a dotted or broken line, then it represents an
“Enhancement” (normally-OFF) type MOSFET as zero drain current flows with zero
gate potential. The direction of the arrow pointing to this channel line indicates whether
the conductive channel is a P-type or an N-type semiconductor device.
Basic MOSFET Structure and Symbol

• The construction of the Metal Oxide Semiconductor FET is very different to that of the
Junction FET. Both the Depletion and Enhancement type MOSFETs use an electrical
field produced by a gate voltage to alter the flow of charge carriers, electrons for
nchannel or holes for P-channel, through the semiconductive drain-source channel. The
gate electrode is placed on top of a very thin insulating layer and there are a pair of
small n-type regions just under the drain and source electrodes.

• We saw in the previous tutorial, that the gate of a junction field effect transistor, JFET
must be biased in such a way as to reverse-bias the pn-junction. With a insulated gate
MOSFET device no such limitations apply so it is possible to bias the gate of a
MOSFET in either polarity, positive (+ve) or negative (-ve).

• This makes the MOSFET device especially valuable as electronic switches or to make
logic gates because with no bias they are normally non-conducting and this high gate
input resistance means that very little or no control current is needed as MOSFETs are
voltage controlled devices. Both the p-channel and the n-channel MOSFETs are
available in two basic forms, the Enhancement type and the Depletion type.

Depletion-mode MOSFET

• The Depletion-mode MOSFET, which is less common than the enhancement mode
types is normally switched “ON” (conducting) without the application of a gate bias
voltage. That is the channel conducts when VGS = 0 making it a “normally-closed”
device. The circuit symbol shown above for a depletion MOS transistor uses a solid
channel line to signify a normally closed conductive channel.

• For the n-channel depletion MOS transistor, a negative gate-source voltage, -VGS will
deplete (hence its name) the conductive channel of its free electrons switching the
transistor “OFF”. Likewise for a p-channel depletion MOS transistor a positive
gatesource voltage, +VGS will deplete the channel of its free holes turning it “OFF”.
 • In other words, for an n-channel depletion mode MOSFET: +VGS means more electrons
and more current. While a -VGS means less electrons and less current. The opposite is
also true for the p-channel types. Then the depletion mode MOSFET is equivalent to a
“normally-closed” switch.

Depletion-mode N-Channel MOSFET and circuit Symbols

• The depletion-mode MOSFET is constructed in a similar way to their JFET transistor

counterparts were the drain-source channel is inherently conductive with the electrons
and holes already present within the n-type or p-type channel. This doping of the
channel produces a conducting path of low resistance between the Drain and Source
with zero Gate bias.

ENHANCEMENT-MODE MOSFET

• The more common Enhancement-mode MOSFET or E-MOSFET, is the reverse of

the depletion-mode type. Here the conducting channel is lightly doped or even undoped
making it non-conductive. This results in the device being normally “OFF”
(nonconducting) when the gate bias voltage, VGS is equal to zero. The circuit symbol
shown above for an enhancement MOS transistor uses a broken channel line to signify
a normally open non-conducting channel.
 • For the n-channel enhancement MOS transistor a drain current will only flow when a
gate voltage ( VGS ) is applied to the gate terminal greater than the threshold voltage (
VTH ) level in which conductance takes place making it a transconductance device.

• The application of a positive (+ve) gate voltage to a n-type eMOSFET attracts more
electrons towards the oxide layer around the gate thereby increasing or enhancing
(hence its name) the thickness of the channel allowing more current to flow. This is why
this kind of transistor is called an enhancement mode device as the application of a gate
voltage enhances the channel.

• Increasing this positive gate voltage will cause the channel resistance to decrease further
causing an increase in the drain current, ID through the channel. In other words, for an
n-channel enhancement mode MOSFET: +VGS turns the transistor “ON”, while a zero
or -VGS turns the transistor “OFF”. Thus the enhancement-mode MOSFET is equivalent
to a “normally-open” switch.

• The reverse is true for the p-channel enhancement MOS transistor. When VGS = 0 the
device is “OFF” and the channel is open. The application of a negative (-ve) gate voltage
to the p-type eMOSFET enhances the channels conductivity turning it “ON”. Then for
an p-channel enhancement mode MOSFET: +VGS turns the transistor “OFF”, while -
VGS turns the transistor “ON”.

ENHANCEMENT-MODE N-CHANNEL MOSFET AND CIRCUIT SYMBOLS

 • Enhancement-mode MOSFETs make excellent electronics switches due to their low
“ON” resistance and extremely high “OFF” resistance as well as their infinitely high
input resistance due to their isolated gate. Enhancement-mode MOSFETs are used in
integrated circuits to produce CMOS type Logic Gates and power switching circuits in
the form of as PMOS (P-channel) and NMOS (N-channel) gates. CMOS actually stands
for Complementary MOS meaning that the logic device has both PMOS and NMOS
within its design.

UNIT 3

Introduction
• An Operational Amplifier is fundamentally a voltage amplifying device designed to
be used with external feedback components such as resistors and capacitors between its
output and input terminals.

• These feedback components determine the resulting function or “operation” of the

amplifier and by virtue of the different feedback configurations whether resistive,
capacitive or both, the amplifier can perform a variety of different operations, giving
rise to its name of “Operational Amplifier”.

Op-Amp Basic:
• An Operational Amplifier is basically a three-terminal device which consists of two
high impedance inputs. One of the inputs is called the Inverting Input, marked with a
 negative or “minus” sign, ( – ). The other input is called the Non-inverting Input, marked
with a positive or “plus” sign ( + ).

• A third terminal represents the operational amplifiers output port which can both sink
and source either a voltage or a current. In a linear operational amplifier, the output
signal is the amplification factor, known as the amplifiers gain ( A ) multiplied by the
value of the input signal and depending on the nature of these input and output signals,
there can be four different classifications of operational amplifier gain.

• Voltage – Voltage “in” and Voltage “out”

• Current – Current “in” and Current “out”

• Transconductance – Voltage “in” and Current “out”

• Transresistance – Current “in” and Voltage “out”

Since most of the circuits dealing with operational amplifiers are voltage amplifiers, we will
limit the tutorials in this section to voltage amplifiers only, (Vin and Vout).

• The output voltage signal from an Operational Amplifier is the difference between the
signals being applied to its two individual inputs. In other words, an op-amps output
signal is the difference between the two input signals as the input stage of an
Operational Amplifier is in fact a differential amplifier.

• Pin diagram of OPAMP(741).

Equivalent Circuit of an Ideal Operational Amplifier

Ideal and Practical Characteristic of OPAMP

1. Open Loop Gain, (Avo): Infinite and typical real values range from about 20,000 to
200,000.

2. Input impedance, (ZIN): Infinite and typical real values range of 1x 10 6 ohms.

3. Output impedance, (ZOUT): Zero and Real op-amps have output impedances in the 75 Ω
range.

4. Bandwidth, (BW) : Infinite and With real op-amps, the bandwidth is limited by the
Gain-Bandwidth product (GB), which is equal to the frequency where the amplifiers
gain becomes unity. 1MHZ

5. Offset Voltage, (VIO) : Zero and mv

6. Slew Rate : Infinite and real value is 0.5 V/uS.

7. Common Mode rejection Ratio (CMRR): Infinite and real value is 90dB.

Concept of Virtual Short and Virtual Ground

• Assume ideal OP-Amp. The input impedance (Ri) of an OP-AMP is ideally Infinite.
Hence current “I” flowing from one input terminal to other will be zero . Thus Voltage
drop across Ri=0 Both the i/p terminals will be at the same potential. → i.e. virtually
shorted

i.e.V0 = Av x Vd

V0 = o/p Voltage

Vd=Differential Input voltage

Av = open loop gain

 ∴Vd= V0 / Av

But Av=∞ for an ideal op-amp and Av=2×105 for IC 741

• For ideal, Vd = 0, Thus potential difference between input terminals = 0
• When we short circuit two point , they will have same potential. Due to this reason, the
two OP-AMP terminals which are almost equipotential are to be virtually (not actually)
short circuited.

Virtual Ground :

• If (+) terminal is connected to ground, they due to “virtual short”, (-) terminal will also
be grid potential. Hence it is “virtual ground”

• Similarly, if (-) terminal is connected to ground then (+) terminal will be at “virtual
ground ” potential. The concept of virtual ground has been used extensively in analysing
various closed loop configuration, especially we use this concept in the inverting
amplifier analysis.

Practical Op-Amp Circuits

1. Inverting Amplifier:

Analysis Using the Ideal OP AMP

“VIRTUAL”
GROUND
 i + =i i s f n v = =v 0 n p v
i=s
s R
s
v
i=of R
f

in =0 if
=−is
vo vs

R =−
vRo =−
f Rv
f ss

2. Non Inverting amplifier:

 Analysis Using the Ideal OP AMP

“Virtual
“ Short vp =vg
Rs
vn =vp =vg =vo
R Rs + f
R Rs + f
R
vo = vg
vo = 1+ f
Rs
vg
Rs

3. Voltage follower:
• If R1=∞ and Rf =0 in the non inverting amplifier configuration. The amplifier act as a
unity-gain amplifier or voltage follower.
• The circuit consists of an op -amp and a wire connecting the output voltage to the input,
i.e. the output voltagev is equal to the input voltage, both in magnitude and phase.
V0=Vi.Since the output voltage of the circuit follows the input voltage, the circuit is
called voltage follower. It offers very high input impedance of the order of MΩ and
very low output impedance.
• Therefore, this circuit draws negligible current from the source. Thus, the voltage
follower can be used as a buffer between a high impedance source and a low impedance
load for impedance matching applications.

4. Summing Amplifier

• Many applications in electronic circuits require two or more analog signals to be added
or combined into a single output. The summing amplifier does the exact same thing.

• For this reason, summing amplifier is also called as Voltage adder since its output is the
addition of voltages present at its input terminal.

• The summing amplifier uses an inverting amplifier configuration, i.e. the input is
applied to the inverting input terminal of the op-amp, while the non-inverting input
terminal is connected to ground. Due to this configuration, the output of voltage adder
is out of phase with respect to the input by 180o
For an inverting amplifier, the output voltage is given as,

VOUT = – (Rf/RIN) VIN

So for the summing amplifier shown above, the output equation would be,

VOUT = – {(Rf/RIN1) VIN1 + (Rf/RIN2) VIN2 + (Rf/RIN3) VIN3}

If all the input resistances are chosen to be of equal magnitude (Rin), then the output equation
of the summing amplifier can be rewritten as,

VOUT = – {(Rf/RIN) {VIN1 + VIN2 + VIN3}

In general, a summing amplifier output equation is given as,

VOUT = – {(Rf/RIN) {V1 + V2 + V3 + ……….. + VN}

Sometimes, it is necessary to just add the input voltages without amplifying them. In such
situations, the value of input resistance Rin1, Rin2, Rin3, etc. must be chosen equal to that of
the feedback resistor Rf. Then, the gain of the amplifier will be unity. Hence the output voltage
will be an addition of the input voltages.
5. Differential Amplifier ( Subtractor )

• By connecting each input in turn to 0v ground we can use superposition to solve for the
output voltage Vout. Then the transfer function for a Differential Amplifier circuit is
given as:

• When resistors, R1 = R2 and R3 = R4 the above transfer function for the differential
amplifier can be simplified to the following expression:

Differential Amplifier Equation

• If all the resistors are all of the same ohmic value, that is: R1 = R2 = R3 = R4 then the
circuit will become a Unity Gain Differential Amplifier and the voltage gain of the
amplifier will be exactly one or unity. Then the output expression would simply be Vout
= V2 – V1.
6. Op-amp Integrator Circuit

• Operational amplifier can be configured to perform calculus operations such as

differentiation and integration. In an integrating circuit, the output is the integration of
the input voltage with respect to time. A passive integrator is a circuit which does not
use any active devices like op-amps or transistors.

• An integrator circuit which consists of active devices is called an Active integrator. An

active integrator provides a much lower output resistance and higher output voltage
than is possible with a simple RC circuit.

• Op-amp differentiating and integrating circuits are inverting amplifiers, with

appropriately placed capacitors. Integrator circuits are usually designed to produce a
triangular wave output from a square wave input.

• Integrating circuits have frequency limitations while operating on sine wave input
signals.

• From the circuit, it is seen that node Y is grounded through a compensating resistor R1.
Node X will also be at ground potential, due to the virtual ground.

VX = VY = 0

• Since the input current to an op-amp is ideally zero, the current flowing through the
input resistor, due to Vin, also flows through the capacitor Cf. • From the input side,
the current I is given as,

I = (Vin – VX) / R1 = Vin / R1

• From the output side, the current I is given as,

 I = Cf [d(VX – Vout)/dt] = -Cf [d(Vout)/dt] •

Equating the above two equations of I, we get,

[Vin / R1] = – Cf [d(Vout)/dt]

• Integrating both the sides of the above equation,

• The negative sign indicates that there is a phase shift of 180o between input and
output, because the input is provided to the inverting input terminal of the op-amp.

7. OPAMP Differentiator Circuit.

A differentiator circuit is one in which the voltage output is directly proportional to the
rate of change of the input voltage with respect to time.
• This means that a fast change to the input voltage signal, the greater the output voltage
change in response.

• As a differentiator circuit has an output that is proportional to the input change, some
of the standard waveforms such as sine waves, square waves and triangular waves give
very different waveforms at the output of the differentiator circuit.

The charge on the capacitor equals Capacitance times Voltage across the capacitor

• Thus the rate of change of this charge is:

 but dQ/dt is the capacitor current, i

• from which we have an ideal voltage output for the op-amp differentiator is given as:

• Therefore, the output voltage Vout is a constant –Rƒ*C times the derivative of the input
voltage Vin with respect to time. The minus sign (–) indicates a 180o phase shift because
the input signal is connected to the inverting input terminal of the operational amplifier.

Op-Amp Comparator:
• The Op-amp comparator compares one analogue voltage level with another analogue
voltage level, or some preset reference voltage, VREF and produces an output signal
based on this voltage comparison.

• lets first assume that VIN is less than the DC voltage level at VREF, ( VIN < VREF ). As
the non-inverting (positive) input of the comparator is less than the inverting (negative)
input, the output will be LOW and at the negative supply voltage, -Vcc resulting in a
negative saturation of the output.

• input voltage, VIN so that its value is greater than the reference voltage VREF on the
inverting input, the output voltage rapidly switches HIGH towards the positive supply
voltage, +Vcc resulting in a positive saturation of the output.
 • we can see that the op-amp voltage comparator is a device whose output is dependant
on the value of the input voltage, VIN with respect to some DC voltage level as the
output is HIGH when the voltage on the non-inverting input is greater than the voltage
on the inverting input, and LOW when the non-inverting input is less than the inverting
input voltage.

• op-amps high open-loop gain the magnitude of its output voltage could be infinite in
both directions, (±∞). However practically, and for obvious reasons it is limited by the
op-amps supply rails giving VOUT = +Vcc or VOUT = -Vcc.

Positive and Negative Voltage Comparators

• A basic op-amp comparator circuit can be used to detect either a positive or a

negative going input voltage depending upon which input of the operational
amplifier we connect the fixed reference voltage source and the input voltage
too.

Positive Voltage Comparator

• The basic configuration for the positive voltage comparator, also known as a
non-inverting comparator circuit detects when the input signal, VIN is ABOVE
or more positive than the reference voltage, VREF producing an output at VOUT
which is HIGH as shown.

Non-inverting Comparator Circuit

• In this non-inverting configuration, the reference voltage is connected to the

inverting input of the operational amplifier with the input signal connected to
the non-inverting input. To keep things simple, we have assumed that the two
resistors forming the potential divider network are equal and: R1 = R2 = R. This
 will produce a fixed reference voltage which is one half that of the supply
voltage, that is Vcc/2, while the input voltage is variable from zero to the supply
voltage.

• When VIN is greater than VREF, the op-amp comparators output will saturate
towards the positive supply rail, Vcc. When VIN is less than VREF the op-amp
comparators output will change state and saturate at the negative supply rail, 0v
as shown.

• Negative Voltage Comparator

• The basic configuration for the negative voltage comparator, also known as an inverting
comparator circuit detects when the input signal, VIN is BELOW or more negative than
the reference voltage, VREF producing an output at VOUT which is HIGH as shown.

Inverting Comparator Circuit

• In the inverting configuration, which is the opposite of the positive configuration above,
the reference voltage is connected to the non-inverting input of the operational amplifier
while the input signal is connected to the inverting input. Then when VIN is less than
VREF the op-amp comparators output will saturate towards the positive supply rail, Vcc.

• Likewise the reverse is true, when VIN is greater than VREF, the op-amp comparators
output will change state and saturate towards the negative supply rail, 0v.

• Then depending upon which op-amp inputs we use for the signal and the reference
voltage, we can produce an inverting or non-inverting output. We can take this idea of
detecting either a negative or positive going signal one step further by combining the
two op-amp comparator circuits above to produce a window comparator circuit.
Differential and Common-Mode Operation

common Mode operation

• In this mode, the signals applied to the base of Q1 and Q2 are derived from the same
source. So the two signals are equal in magnitude as well as in phase. The circuit
diagram is shown in the Fig.

• In phase signal voltages at the bases of Q1 and Q2 causes in phase signal voltages to
appear across R E, which add together. Hence R E carries a signal current and provides
a negative feedback. This feedback reduces the common mode gain of differential
amplifier.

• While the two signals causes in phase signal voltages of equal magnitude to appear
across the two collectors of Q 1 and Q2. Now the output voltage is the difference
between the two collector voltages, which are equal and also same in phase,

Eg. (20) - (20) = 0. Thus the difference output Vo is almost zero, negligibly small. ideally it
should be zero.

Differential Mode Operation

• In the differential mode, the two input signals are different from each other. Consider
the two input signals which are same in magnitude but 180" out of phase. These signals,
 with opposite phase can be obtained from the center tap transformer. The circuit used
in differential mode operation is shown in the Fig..

• Assume that the sine wave on the base of Q 1is positive going while on the base of Q 2
is negative going. With a positive going signal on the base of Q 1, m amplified negative
going signal develops on the collector of Q1.
• Due to positive going signal, current through R E also increases and hence a positive
going wave is developed across R E.
• Due to negative going signal on the base of Q2, an amplified positive going signal
develops on the collector of Q 2. And a negative going signal develops across R E,
because of emitter follower action of Q 2.
• So signal voltages across R E, due to the effect of Q1 and Q2 are equal in magnitude and
180o out of phase, due to matched pair of transistors. Hence these two signals cancel
each other and there is no signal across the emitter resistance. Hence there is no a.c.
signal current flowing through the emitter resistance.
• Hence R E in this case does not introduce negative feedback. While Vo is the output
taken across collector of Q1 and collector of Q 2. The two outputs on collector L and 2
are equal in magnitude but opposite in polarity. And Vo is the difference between these
two signals, e.g. +10 - (-10) = + 20.
• Hence the difference output Vo is twice as large as the signal voltage from either
collector to ground.

UNIT 4

Unit-4 Number System

.
 Introduction to digital electronics
When we type some letters or words, the computer translates them in numbers as computers can
understand only numbers. A computer can understand the positional number system where there are
only a few symbols called digits and these symbols represent different values depending on the
position they occupy in the number.

The value of each digit in a number can be determined using −

• The digit

• The position of the digit in the number

• The base of the number system (where the base is defined as the total number of digits
available in the number system)

S.No. Number System and Description

1 Binary Number System

Base 2. Digits used : 0, 1

2 Octal Number System

Base 8. Digits used : 0 to 7

 3 Hexa Decimal Number System

Number System

Base 16. Digits used: 0 to 9, Letters used : A- F

Decimal Number System

The number system that we use in our day-to-day life is the decimal number system. Decimal number
system has base 10 as it uses 10 digits from 0 to 9. In decimal number system, the successive positions
to the left of the decimal point represent units, tens, hundreds, thousands, and so on.

Each position represents a specific power of the base (10). For example, the decimal number 1234
consists of the digit 4 in the units position, 3 in the tens position, 2 in the hundreds position, and 1 in
the thousands position. Its value can be written as

(1 x 1000)+ (2 x 100)+ (3 x 10)+ (4 x l)

(1 x 103)+ (2 x 102)+ (3 x 101)+ (4 x l00)

1000 + 200 + 30 + 4

1234

Step Binary Number Decimal Number

Step 1 101012 ((1 x 24) + (0 x 23) + (1 x 22) + (0 x 21) + (1 x 20))10

Step 2 101012 (16 + 0 + 4 + 0 + 1)10

Step 3 101012 2110

As a computer programmer or an IT professional, you should understand the following number

systems which are frequently used in computers.

Binary Number System

Characteristics of the binary number system are as follows −

• Uses two digits, 0 and 1

• Also called as base 2 number system

• Each position in a binary number represents a 0 power of the base (2). Example 20

• Last position in a binary number represents a x power of the base (2). Example 2x where x
represents the last position - 1.

Example

Binary Number: 101012

Calculating Decimal Equivalent −

Note − 101012 is normally written as 10101.

Octal Number System

Characteristics of the octal number system are as follows −

• Uses eight digits, 0,1,2,3,4,5,6,7

• Also called as base 8 number system

• Each position in an octal number represents a 0 power of the base (8). Example 80

• Last position in an octal number represents a x power of the base (8). Example 8x where x
represents the last position - 1

Example

Octal Number: 125708

Calculating Decimal Equivalent −

Note − 125708 is normally written as 12570.

Hexadecimal Number System

Characteristics of hexadecimal number system are as follows −

• Uses 10 digits and 6 letters, 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, A, B, C, D, E, F

• Letters represent the numbers starting from 10. A = 10. B = 11, C = 12, D = 13, E = 14, F =
15

• Also called as base 16 number system

• Each position in a hexadecimal number represents a 0 power of the base (16). Example, 160

Step Binary Number Decimal Number

Step 1 19FDE16 ((1 x 164) + (9 x 163) + (F x 162) + (D x 161) + (E x 160))10

Step 2 19FDE16 ((1 x 164) + (9 x 163) + (15 x 162) + (13 x 161) + (14 x 160))10

Step 3 19FDE16 (65536+ 36864 + 3840 + 208 + 14)10

Step 4 19FDE16 10646210

 • Last position in a hexadecimal number represents a x power of the base (16). Example 16x
where x represents the last position - 1

Example

Hexadecimal Number: 19FDE16

Step Octal Number Decimal Number

Step 1 125708 ((1 x 84) + (2 x 83) + (5 x 82) + (7 x 81) + (0 x 80))10

Step 2 125708 (4096 + 1024 + 320 + 56 + 0)10

Step 3 125708 549610

Calculating Decimal Equivalent −

Note − 19FDE16 is normally written as 19FDE.

There are many methods or techniques which can be used to convert numbers from one base to
another. In this chapter, we'll demonstrate the following −

• Decimal to Other Base System

• Other Base System to Decimal

• Other Base System to Non-Decimal

• Shortcut method - Binary to Octal

• Shortcut method - Octal to Binary

• Shortcut method - Binary to Hexadecimal

• Shortcut method - Hexadecimal to Binary

Decimal to Other Base System

Step 1 − Divide the decimal number to be converted by the value of the new base.

Step 2 − Get the remainder from Step 1 as the rightmost digit (least significant digit) of the new base
number.

Step 3 − Divide the quotient of the previous divide by the new base.

Step 4 − Record the remainder from Step 3 as the next digit (to the left) of the new base number.

Repeat Steps 3 and 4, getting remainders from right to left, until the quotient becomes zero in Step 3.

The last remainder thus obtained will be the Most Significant Digit (MSD) of the new base number.
Example

Decimal Number: 2910

Calculating Binary Equivalent −

As mentioned in Steps 2 and 4, the remainders have to be arranged in the reverse order so that the first
remainder becomes the Least Significant Digit (LSD) and the last remainder becomes the Most
Significant Digit (MSD).

Decimal Number : 2910 = Binary Number : 111012.

Other Base System to Decimal System

Step 1 − Determine the column (positional) value of each digit (this depends on the position of the
digit and the base of the number system).

Step 2 − Multiply the obtained column values (in Step 1) by the digits in the corresponding columns.

Step 3 − Sum the products calculated in Step 2. The total is the equivalent value in decimal.

Example

Binary Number: 111012

Step Octal Number Decimal Number

Step 1 258 ((2 x 81) + (5 x 80))

Step 2 258 (16 + 5)10

Step 3 258 2110

Step Operation Result

Step 1 29 / 2 14

Step 2 14 / 2 7

Step 3 7/2 3

Step 4 3/2 1

Step 5 1/2 0

Calculating Decimal Equivalent −

Binary Number : 111012 = Decimal Number : 2910

Other Base System to Non-Decimal System

Step 1 − Convert the original number to a decimal number (base 10).

Step 2 − Convert the decimal number so obtained to the new base number.

Example

Octal Number : 258

Calculating Binary Equivalent −

Step 1 - Convert to Decimal

Octal Number : 258 = Decimal Number : 2110

Step 2 - Convert Decimal to Binary

Step Binary Number Decimal Number

Step 1 111012 ((1 x 24) + (1 x 23) + (1 x 22) + (0 x 21) + (1 x 20))10

Step 2 111012 (16 + 8 + 4 + 0 + 1)10

Step 3 111012 2910

Step Operation Result Remainder

Step 1 21 / 2 10 1

Step 2 10 / 2 5 0

Step 3 5/2 2 1

Step 4 2/2 1 0

Step 5 1/2 0 1

Decimal Number : 2110 = Binary Number : 101012

Octal Number : 258 = Binary Number : 101012

Shortcut Method ─ Binary to Octal

Step 1 − Divide the binary digits into groups of three (starting from the right).
Step 2 − Convert each group of three binary digits to one octal digit.

Example

Binary Number : 101012

Calculating Octal Equivalent −

Step Binary Number Octal Number

Step 1 101012 010 101

Step 2 101012 28 58

Step 3 101012 258

Binary Number : 101012 = Octal Number : 258

Shortcut Method ─ Octal to Binary

Step 1 − Convert each octal digit to a 3-digit binary number (the octal digits may be treated as decimal
for this conversion).

Step 2 − Combine all the resulting binary groups (of 3 digits each) into a single binary number.

Example

Octal Number : 258

Calculating Binary Equivalent −

Step Octal Number Binary Number

Step 1 258 210 510

Step 2 258 0102 1012

Step 3 258 0101012

Octal Number : 258 = Binary Number : 101012

Shortcut Method ─ Binary to Hexadecimal

Step 1 − Divide the binary digits into groups of four (starting from the right).

Step 2 − Convert each group of four binary digits to one hexadecimal symbol.

Example

Binary Number : 101012

Calculating hexadecimal Equivalent −

Binary Number : 101012 = Hexadecimal Number : 1516

Shortcut Method - Hexadecimal to Binary

Step 1 − Convert each hexadecimal digit to a 4-digit binary number (the hexadecimal digits may be
treated as decimal for this conversion).

Step 2 − Combine all the resulting binary groups (of 4 digits each) into a single binary number.

Example

Hexadecimal Number : 1516

Calculating Binary Equivalent −

Step Hexadecimal Number Binary Number

Step 1 1516 110 510

Step 2 1516 00012 01012

Step 3 1516 000101012

Hexadecimal Number : 1516 = Binary Number : 101012

Step Binary Number Hexadecimal Number

Step 1 101012 0001 0101

Step 2 101012 110 510

Step 3 101012 1516

Implementation of Boolean Logic by Digital Circuits

We now consider the use of electronic circuits to implement Boolean

functions and arithmetic functions that can be derived from these Boolean
functions.

Digital circuits are built from standard analog components, such as

transistors.
It is the manner in which these transistors are used that causes them to
display the properties required for a digital circuit.

Early digital circuits were based on electromechanical relays, automatic

switches that were either “on” or “off”.
 Relay On Relay Off

In 1937, George Stibitz of Bell Labs developed what he called the “Model
K”.
It was a binary full adder based on relays implementing Boolean logic.
He developed the device at home in his kitchen; hence the name.

In 1938, Konrad Zuse developed a relay–based digital computer, the Z-1, in his
parents’ apartment in Berlin. It was lost to bombing during the war.

Digital Technologies

There are quite a few ways to build digital circuits. The choice of which to
use in any given device is based on a tradeoff of cost, speed, and power
usage.

This course is based on an older technology that is a bit simpler to

understand.
This technology is still seen in digital labs used for teaching.

The technology is called TTL (Transistor–Transistor Logic). It is based on

the use of transistors in a mode in which they act as switches, much like
relays.

Logically, each TTL device is a Boolean device. All inputs to this device
and outputs from this device are either logic 0 or logic 1.

Electrically, these TTL devices are built to a standard that determines how
voltages into the device will be interpreted and what voltage is output.

Here are the voltage standards for active high TTL, the variety we study.

Input to Device Output by Device

Logic 1 2.0 to 5.0 volts 2.4 to 5.0 volts

Logic 0 0.0 to 0.8 volts 0.0 to 0.4 volts

Note the greater latitude on input specifications to allow for voltage

degradation.

Basic Digital Circuit Elements

We have already discussed these gates, but present them again.

NOT This function takes one input and produces one output. The gate is
shown below. The circle at the right end of the triangle is
important.
Algebraically, this function is denoted f(X) = X’ or f(X) = X

The evaluation of the function is simple: 0= 1 and 1 = 0.

Here is the truth table for the NOT operator.

X X
0 1
1 0

Basic Boolean Operators (Part 2)

Logic OR

This is a function of two Boolean variables. We denote the logical OR of

two Boolean
variables X and Y by “X + Y”. Some logic books will use “X Y”.

The evaluation of the logical OR function is shown by a truth table

X Y X+Y
0 0 0
0 1 1
1 0 1
1 1 1

Basic Boolean Operators (Part 3)

Logic AND

This is a function of two Boolean variables. We denote the logical AND of

two Boolean
variables X and Y by “X • Y”. Some logic books will use “X Y”.
The evaluation of the logical AND function is shown by a truth table
X Y X•Y
0 0 0
0 1 0
1 0 0
1 1 1

Another Boolean Operator

While not a basic Boolean operator, the exclusive OR is very handy.

Logic XOR

This is a function of two Boolean variables. We denote the logical XOR of

two Boolean
variables X and Y by “X Y”. Most logic books seem to ignore this
function.

The evaluation of the logical XOR function is shown by a truth table

X Y X Y
0 0 0
0 1 1
1 0 1
1 1 0
From this last table, we see immediately that

X 0 = X and X 1=X

Other Logic Gates

The top gate shows the NOR gate and its logical equivalent.
The bottom line shows the NAND gate and its logical equivalent.
In my notes, I call these “derived gates” as they are composites of Boolean
gates that are more basic from the purely theoretical approach.

X Y OR NOR X Y AND NAND

0 0 0 1 0 0 0 1

0 1 1 0 0 1 0 1

1 0 1 0 1 0 0 1

1 1 1 0 1 1 1 0

AND Gates and OR Gates: The Real Way

In actual fact, the NAND and NOR gates are more primitive than the
AND, OR, and NOT gates in that they are easier to build from transistors.

AND is NOT (NAND)

X
Y

NAND AND

0 0 1 0

0 1 1 0

1 0 1 0

1 1 0 1

OR is NOT (NOR)
 X
Y

NOR OR

0 0 1 0

0 1 0 1

1 0 0 1

1 1 0 1

Implementation of Basic Circuits

These circuits use simple switches to implement NOT, NOR, and NAND
gates.

In the circuit at right, if both switches are

V1 R1
5 V 1.0kOhm_5%
X1

2.5 V
J1
Key = Space

V3 R3
5 V 1.0kOhm_5%
X3

2.5 V
J4
Key = C

R2 J5
V2 1.0kOhm_5% Key = D
5 V X2

2.5 V
J2 J3
Key = A Key = B

closed, (logic 1), the output is 0 volts.

If neither or only one is closed, the output is 5 volts. This is a NAND
gate.The NOR Gate Implemented in CMOS
The NAND Gate Implemented in CMOS
The OR Gate and the AND Gate
The NAND Gate as a Universal Gate

We show how to use a NAND gate to implement the three basic gates of
Boolean logic: AND, OR, and NOT.

We begin with a simple NAND gate and its truth table.

(X•Y)
X Y X•Y

0 0 0 1
0 1 0 1
1 0 0 1
1 1 1 0
We now use the NAND gate to implement the basic Boolean devices.

The NAND Gate as a NOT Gate or an AND Gate

•Y) (X•X)
Note in the above truth table, that if Y = X, then (X = =

X.
Here is the NAND implementation of the NOT gate.

Since the NAND gate is logically equivalent to NOT (AND), we may use
“double negation” to say that the AND gate is equivalent to NOT (NAND).

Here is the AND gate as implemented from two NAND gates.

The NAND Gate as an OR Gate

In order to fabricate an OR gate from NAND gates, we must recall

DeMorgan’s laws.

One of DeMorgan’s laws is usually stated as (X•Y) = X + Y .

•Y)
This can be changed to the form (X = X + Y = X + Y.

Here is the circuit.

Multiple–Input Gates

The standard definitions of the AND and OR gates call for two inputs.

3–input and 4–input varieties of these gates are quite common. Here
we give informal, but precise, definitions.

Gate Number of Inputs Output

NOT Exactly 1 0 if input is 1, 1 if input is 0

AND 2 or more 0 if any input is 0

1 if and only if all inputs are 1.

OR 2 or more 1 if any input is 1

0 if and only if all inputs are 0.

NAND 2 or more 1 if any input is 0

0 if and only if all inputs are 1

NOR 2 or more 0 if any input is 1

1 if and only if all inputs are 0.

Example: “Changing the Number of Inputs”

Some lab experiments call for gates with input counts other than what we
have.

We begin with two ways to fabricate a 4–input AND gate from 2–input
ANDs.

Another Example
We now consider how to take a 4–input AND gate and make it act as
if it were a 2–input AND gate.

There are always multiple solutions. Here are two solutions. There
are many others.

Fan–Out

By definition, the fan–out of a logic gate is the number of other logic gates
receiving input from it.

Considerations based on electrical engineering limit the fan–out of any

gate.

Here is an OR gate with a fan–out of 5. It drives five other gates of some

kind.

When the fan–out of a circuit element gets too large, there is a voltage sag.

This is similar to what can happen in a building when a large motor or

large electric heater turns on.

Controlling Fan–Out

Upon occasion, a given large circuit element will have a number of smaller
circuit elements fed from the same input.

There is a standard design trick to cause that big circuit to present only
one input to the “outside world”. Here is that trick.
Here the fan–out issue is transferred to the second NOT gate, which is
internal to the larger circuit element.

Karnaugh maps (K-Map)

Karnaugh maps provide an alternative way of simplifying logic circuits. Instead of using Boolean
algebra simplification techniques, you can transfer logic values from a Boolean statement or a truth
table into a Karnaugh map. The arrangement of 0's and 1's within the map helps you to visualize the
logic relationships between the variables and leads directly to a simplified Boolean statement.

Karnaugh maps, or K-maps, are often used to simplify logic problems with 2, 3 or 4 variables.

2-variable Karnaugh maps are trivial but can be used to introduce the methods you need to learn. The
map for a 2-input OR gate looks like this:

The values of one variable appear across the top of the map, defining the column values, while the
values of the other variable appear at the side, defining the values of the variable in each row.

The Karnaugh map for the OR gate is completed by entering a '1' in each of the appropriate cells.
Usually, you don't write in the '0's'. Within the map, adjacent cells containing 1's are grouped together
in twos, fours, or eights. In this case, there is one horizontal and on vertical group of two. You
indicate these groupings by drawing a circle round each one.

The horizontal group corresponds to a B value of 1. In the left hand cell, A=0 and in the right hand
cell, A=1. In other words, the value of A does not affect the outcome of the Boolean expression for
these cells. Before grouping, you might have written the Boolean expression for these two cells as:

After grouping, this reduces to:

B

In a similar way, the vertical group could have been written as:

From the map, you can see that the value of B does not affect the value written in the cells for this
group. In other words, the vertical group reduces to:

In this way, the Karnaugh map leads to the overall expression A + B.

This is not very exciting but if you apply the same methods to a more complex logic problem, you will
begin to understand how Karnaugh maps lead to simpler Boolean statements.

.
3-variable Karnaugh maps

Here is the truth table for a 3-person majority voting system:

input C input B input A output

0 0 0 0

0 0 1 0

0 1 0 0

0 1 1 1

1 0 0 0

1 0 1 1

1 1 0 1

1 1 1 1

This is converted into a Karnaugh map, as follows:

Look carefully at the variables at the top of the Karnaugh map. These are not written in binary order
00, 01, 10, 11 etc. Instead, each column differs from the previous one by just one bit. This is called
Grey code and it is essential for your Karnaugh map to work that you enter the column values in this
order. (You will find out more about Grey code later.)

Within the K-map, you can identify three groups of two, as indicated. The left hand horizontal group
combines the cells and A.B.C. Within this group, the value of B does not affect the cell values.
This means that B can be eliminated from the expression, leaving A.C.

Work through the other groups to confirm that you understand how the remaining terms in the
Boolean expression were derived.

With a little practice, this method is going to be quicker than the alternative, simplfiying the Boolean
expression derived from the truth table:

3-variable examples

1. Simplify the following expression using a Karnaugh map:

You may be able to tell what is going to happen by completing the truth table for this expression.

2. Simplify the following expression using a Karnaugh map:

From this expression, you can't complete the truth table or Karnaugh map directly. First, you need to
convert the statement into sum of products, or SOP form:

Continue from this point and check your answer by clicking the link

3. Here is another expression to simplify:

Note that has no C variable and fills two cells in the map. This condition is satisfied when C=0
and also when C=1.

.
4-variable maps
A 4-variable map will contain 24 = 16 cells. It is important to write the variable values along the
columns and rows in Grey code:

To simplify the equation:

The Karnaugh map becomes:

To give the simplest Boolean statement, you should put a circle round the maximum number of terms.

In this case, you can make two groups of four, one of which wraps around from top to bottom. You
identify the two variables which remain constant in each group and eliminate the other two:

Introduction to IC Technology

The growth of electronics started with invention of vaccum tubes and associated electronic circuits.
This activity termed as vaccum tube electronics, subsequently the evolution of solid state devices and
consequent development of integrated circuits are responsible for the present status of communication,
computing and instrumentation.

Due to its small dimension, low cost, and very high reliability even the common man is familiar with
its applications like smart phones and laptops.

The IC’s also found its way in military applications, state of the art communication systems, and
industrial applications due to its high reliability and compact size. basically these terminologies like
SSI,MSI,LSI and VLSI are emerged from the complexity of IC(Integrated circuit).i.e the number of
transistors of are fabricated on chip(usually single substrate ). first IC was invented around 1959 by
Jack Kilby.
The first integrated circuits contained only a few transistors and so were called “Small-Scale
Integration (SSI). They used circuits containing transistors numbering in the tens. They were very
crucial in development of early computers. SSI was followed by introduction of the devices which
contained hundreds of transistors on each chip, and so were called “Medium-Scale Integration (MSI).

MSI were attractive economically because which they cost little more systems to be produced using
smaller circuit boards, less assembly work, and a number of other advantages. Next development was
of Large Scale Integration (LSI). The development of LSI was driven by economic factors and each
chip comprised tens of thousands of transistors. It was in 1970s, when LSI started getting
manufactured in huge quantities.

LSI was followed by Very Large Scale Integration (VLSI) where hundreds of thousands of transistors
were used and still being developed. It was for the first time that a CPU was fabricated on a single
integrated circuit, to create a microprocessor. In 1986, with the introduction of first one megabit RAM
chips, more than one million transistors were integrated.

Microprocessor chips produced in 1994 contained more than three million transistors. ULSI refer to
“Ultra-Large Scale Integration” and correspond to more than 1 million of transistors. However there is
no qualitative leap between VLSI and ULSI, hence normally in technical texts the “VLSI” term cover
ULSI.

Summary

1. SSI - Small Scale integration less than 100 components

(about 10 gates) 2. MSI - Medium Scale integration less than

500 components (more than 10 but less than 100 gates)

3. LSI - Large Scale integration components b/w

500 and 300000 (more than 100 gates)

 4. VLSI - Very Large Scale integration it

contains more than 300000 components per chip

Nowadays, an IC that has the size of a fingernail

consists of more than a million transistors and other

discrete components embedded into it.

Thus an integrated circuit can also be called a microchip and is basically a collection of some discrete
circuits on a small chip that is made of a semiconductor material like silicon.

Integrated circuit

It is a circuit where all discrete components such as passive as well as active elements are fabricated
on a single crystal chip

 The first semiconductor chip held two transistors each.

 The first integrated circuits hels only a few devices, perhaps as many as ten diodes, transistors,
resistors, and capacitors, making it possible to fabricate one or more logic gates on a single device.

As on increasing the number of components(or transistors) per integrated circuit the technology was
developed as:

Small scale integration(SSI)

The technology was developed by integrating the number of transistors of 1-100 on a single chip.

Ex: Gates,flip-flops,op-amps.

Medium scale integration(MSI)

The technology was developed by integrating the number of transistors of 100-1000 on a single chip.

Ex:Counters,MUX, adders, 4-bit microprocessors.

Large scale integration(LSI)

The technology was developed by integrating the number of transistors of 1000-10000 on a single
chip.

Ex:8-bit microprocessors,ROM,RAM.

Very large scale integration(VLSI)

The technology was developed by integrating the number of transistors of 10000-1Million on a single
chip.

Ex:16-32 bit microprocessors,peripherals,complimentary high MOS.

Ultra large scale integration(ULSI)

The technology was developed by integrating the number of transistors of 1Million-10 Millions on a
single chip.

Ex: special purpose processors.

Giant scale integration(GSI)

The technology was developed by integrating the number of transistors of above 10 Millions on a
single chip.

Ex:Embedded system, system on chip.

Advantages of Integrated Circuits

Integrated circuits possess the following advantages over discrete circuits:

 Increased reliability due to lesser number of connections.

 Extremely small size due to the fabrication of various circuit elements in a single chip of
semiconductor material.

 Lesser weight and space requirement due to miniaturized circuit.

 Low power requirements.

 Greater ability to operate at extreme values of temperature.

 Low cost because of simultaneous production of hundreds of alike circuits on a small

semiconductor wafer.

 The circuit layout is greatly simplified because integrated circuits are constrained to use minimum
number of external connections.

Disadvantages of Integrated Circuits

 If any component in an IC goes out of order, the whole IC has to b replaced by the new one.

 In an IC, it is neither convenient nor economical to fabricate capacitance exceeding 30 pF.

Therefore, for high value of capacitance, discrete components exterior to IC chip are connected.

 It is not possible to fabricate inductors and transformers on the surface of semiconductor chip.
Therefore, these components are connected exterior to the semiconductor chip.

 It is not possible to produce high power ICs greater than 10 W.

 There is a lack of flexibilityin an IC i.e. it is generally not possible to modify the parameters
within which an integrated circuit will operate.

Types of ICs
Metal-can IC Ceramic flat pack IC 14-Pin Dual In-line Package(DIP) 8-Pin Dual
In-line Package(DIP)Plastic

On the basis of applications ICs are of two types namely: Linear Integrated Circuits and Digital
Integrated Circuits.

Linear IC’s are used in cases when the relationship between the input and output of a circuit is linear.
An important application of linear IC is the operational amplifier commonly referred to as op-amp.

When the circuit is either in on-state or off-state and not in between the two, the circuit is called a
digital circuit. IC’s used in such circuits are called digital IC’s. They find wide applications in
computers and logic circuits.

Here are some further classification of integrated circuits based on the fabrication techniques used.

1. Mono-lithic

2. Thin-film

3. Thick-film

4. Hybrid

UNIT 5

Evolution of mobile Radio Communication

Over the most recent couple of decades, there has been a huge progression in mobile wireless

communications.

Mobile Communication systems have encountered an astounding change. It started with 1G

technology of which in a very short amount of time got superseded by 2G, 3G, 4G, & now even 5G.

Mobile telecommunications has turned out to be more mainstream in the most recent couple of years

because of a quick change from 1G to 5G in portable innovation and how we use technology today.

This change is because of the necessity of perfect transmission innovation and high increment in

telecoms clients for everyday uses including businesses, the education sector, and just about every

other industry.

The different types of Mobile Telephony (Cellular) Systems

1G:

As a matter of first importance when we discuss 1G etc what does this G stand for? Well, it stands for

Generation, so 1G is the first generation of mobile communication systems.

In the 1970’s privately owned businesses began building up their own particular correspondence

frameworks to advance existing frameworks further. Those private frameworks were Analogue

mobile phone systems (AMPS) utilized in parts of America and the United Kingdom. Total Access

Communications Systems (TACS) and Nordic Mobile Telephone (NMT) were also used in parts of

Europe. These created frameworks are now what is known as the first Generation of mobile

communication frameworks.

2G:

2G alludes to the second era in light of GSM and was developed in the late 1980s. It utilises

computerised signals for voice transmission. The principal focal point of this innovation was on

advanced flags and gives individuals the ability to convey content and picture messages at low speed.

The GSM innovation was ceaselessly enhanced to give better administrations which prompted

improvement of cutting-edge Technology in the vicinity of 2g and 3g mobile networks.

3G:

Third Generation (3G) is likewise in light of GSM and was propelled in the year 2000. The point of

this innovation was to offer rapid information across the world. The first innovation was enhanced to

permit information up to 14 Mbps and all the more utilising bundle exchanging. It utilises Wide Band

Wireless Networks with which clearness is expanded. It likewise offers information administrations,

access to TV/Video, Data, Text, etc. as well as new administrations like Global Roaming is now

possible. It works at a scope of 2100MHz and has a data transmission of 15-20MHz utilised for

Highspeed network access and video visiting.

The 3G mobile framework was called a UMTS (Universal Mobile Telecommunication System) in

Europe, while CDMA2000 is the name of American 3G variation.

4G:

4G offers a much improved downloading rate of up to 100Mbps. 4G gives the same element

advantages as 3G but also includes extra administrations like Multi-Media Newspapers, watching TV

programs online using services such as Netflix with a lot more clarity due to the send/receive speeds

of Data now being significantly quicker than past ages. It introduced us to the Mobile Social Media
and Mobile App world used how it is today. LTE (Long Term Evolution) is considered a 4G

innovation.

5G is next

5G refers to Fifth Generation of which initial trials began from the late 2010’s but hasn’t rolled out in

most countries as of yet.

All investigations of the release date of when 5G will be available points to the year 2020. In spite of

the fact that the system will start to be deployed in 2018 and the lion’s share of administrators,

administrative bodies and producers are as of now occupied with converses orchestrating a standard,

as it occurred before the deployment of the 4G innovation. Truth be told, Qualcomm has effectively

built up the initial 5G modem, particularly made to help this sort of system, along these lines making

ready for the new age of mobile phones. On its part, the European Union looks to finish the 5G scope

by 2025. At this quick rate of advancement, that date is now around the bend.

5G innovation has remarkable information capacities and has the capacity to integrate unhindered call

volumes and unbounded information communicates inside the most recent portable working

framework. 5G innovation has a splendid future since it can deal with best advances and offer

invaluable handsets to their clients. Maybe in the coming days, 5G innovation assumes control over

the world market. 5G Technologies have an unprecedented capacity to help Software and

Consultancy. The Router and switch innovation utilised as a part of 5G deployment gives an

extremely powerful high-speed network.

What is GPRS? - packet switching

The key element of GPRS technology was that it uses packet switched data rather than circuit switched
data, and this technique made much more efficient use of the available capacity. This is because most
data transfer occurs in what is often termed a "bursty" fashion. The transfer occurs in short peaks,
followed by breaks when there is little or no activity.

GPRS - General Packet Radio Service was the evolution of 2G GSM to provide packet switched data
at rates up to a maximum of 172 kbps.

GPRS was something of a revolution because all previous mobile phone systems had used circuit
switched channels. Also previous cell phone systems including GSM had focussed in voice
communications, but the need for mobile data was starting to come about and GPRS was one of the first
to address this in a real way.

Although 2G GSM could provide some data capability it was far too slow to be used for any real
applications. As a result, GPRS was developed to enable data to be handled and it also provided a
stepping stone on the path to 3G.

GPRS technology offered some significant benefits when it was launched:

 • Speed: One of the headline benefits of GPRS technology is that it offers a much higher data
rate than was possible with GSM. Rates up to 172 kbps are possible, although the maximum
data rates realistically achievable under most conditions will be in the range 15 - 40 kbps.
• Packet switched operation: Unlike GSM which was used circuit switched techniques,
GPRS technology uses packet switching in line with the Internet. This makes far more
efficient use of the available capacity, and it allows greater commonality with Internet
techniques.
• Always on connectivity: A further advantage of GPRS is that it offers an "Always On"
capability. When using circuit switched techniques, charges are based on the time a circuit is
used, i.e. how long the call is. For packet switched technology charges are for the amount of
data carried as this is what uses the services provider's capacity. Accordingly, always on
connectivity is possible.
• More applications: The packet switched technology including the always on connectivity
combined with the higher data rates opens up many more possibilities for new applications.
One of the chief growth areas that arose from GPRS was the Blackberry form of mobile or
PDA. This provided for remote email applications along with web browsing, etc.

Global System for Mobile Communications (GSM)

The Global System for Mobile Communications (GSM) is a standard developed by the European
Telecommunications Standards Institute (ETSI) to describe the protocols for second-generation (2G)
digital cellular networks used by mobile devices such as mobile phones and tablets. It was first
deployed in Finland in December 1991. By the mid-2010s, it became a global standard for mobile
communications achieving over 90% market share, and operating in over 193 countries and
territories.[

GSM utilizes a cellular network, meaning that cell phones connect to it by searching for cells in the
immediate vicinity.

• GSM is a circuit-switched system that divides each 200 kHz channel into eight 25 kHz
timeslots. GSM operates on the mobile communication bands 900 MHz and 1800 MHz in
most parts of the world. In the US, GSM operates in the bands 850 MHz and 1900 MHz.
• GSM owns a market share of more than 70 percent of the world's digital cellular subscribers.
• GSM makes use of narrowband Time Division Multiple Access (TDMA) technique for
transmitting signals.
• GSM was developed using digital technology. It has an ability to carry 64 kbps to 120 Mbps
of data rates.

• Presently GSM supports more than one billion mobile subscribers in more than 210 countries
throughout the world.
• GSM provides basic to advanced voice and data services including roaming service. Roaming
is the ability to use your GSM phone number in another GSM network.
Listed below are the features of GSM that account for its popularity and wide acceptance.
• Improved spectrum efficiency
• International roaming
• Low-cost mobile sets and base stations (BSs)
• High-quality speech
• Compatibility with Integrated Services Digital Network (ISDN) and other telephone
company services
• Support for new services
CDMA

CDMA: Code Division Multiple Access

Code Division Multiple Access is a channel access method used by several radio communication
technologies. It is a digital cellular technology and an example of multiple access. It is generally used
for mobile communication.

Multiple access means that several transmitters can send information simultaneously over a single
communication channel. In this system, different CDMA codes are assigned to different users and the
user can access the whole bandwidth for the entire duration. It optimizes the use of available
bandwidth as it transmits over the entire frequency range and does not limit the user's frequency
range.

Thus, CDMA allows several users to share a band of frequencies without undue interference between
the users. It is used as a access method in many mobile phone standards.

Usage o It is used in the Global Positioning System

(GPS).

o It is used by several mobile phone companies (e.g. Qualcomm standard

IS-2000 also known as CDMA2000)
o W-CDMA is used in UTMS 3G mobile phone standard. o CDMA

has been used in OmniTRACS satellite system for transportation.

Categories of CDMA

o Synchronous CDMA (orthogonal codes) o Asynchronous CDMA

(pseudorandom codes)
 QUESTION BANK (KEC101T)
UNIT 1

1. Explain why the temperature coefficient of resistance of a semiconductor is negative?

2. What causes majority carriers to flow at the moment when a P region and an N region are brought
together? (b) Why does this flow not continue until all the carriers have recombined?
3. Explain the formation of the 'depletion region' in an open circuited PN junction.
State what you understand by barrier potential across a PN-junction. Also explain its significance.
4. Sketch, on the same axes, V-I characteristics for germanium and silicon diodes. Label clearly the values
of knee voltage and reverse saturation current.
What do you understand by 'an ideal diode'? Draw its V-I characteristics.
5. Explain how the process of avalanche breakdown occurs in a PN-junction diode. How is it different
from zener breakdown?
6. Draw the circuit diagram of a half-wave rectifier. Explain its working. What is the minimum frequency
of ripple in its output?
7. Draw the circuit diagram of a full-wave rectifier using (a) centre-tap connection, and ( b) bridge
connection. Explain the working of each. What is the PIV in each case?
8. Explain why a bridge rectifier is preferred over a centre-tap rectifier.
Prove that the ripple factor of a half-wave rectifier is 1.21 and that of a fullwave rectifier is 0.482.
9. Name the two types of reverse breakdowns which can occur in a PN-junction diode. Which type occurs
at lower voltages?
10. Draw the circuit diagram of a voltage regulator circuit using a zener diode. Explain its working.
11. Determine the current I for each of the configurations of Fig. below using the approximate equivalent
model for the diode.

12. Determine Vo for each network of Fig. below for the input shown.

13. Sketch Vo for each network of Fig. below for the input shown.

14. Determine VL, IL , IZ , and IR for the network of Fig. below if R L= 180 ohms. Repeat if RL= 470ohms.

15. Write short notes on (a) LED (b) Varactor (c) Tunnel Diode (d) LCD

UNIT 2
1. Draw a sketch showing the structure of an NPN-junction transistor. Label the emitter, base and collector
regions. Also label the emitter-base and collector base junctions. Repeat the above for a PNP-junction
transistor.
2. Explain why an ordinary junction transistor is called bipolar.
Though the collector-base junction of a transistor operating in active region is reverse-biased, the
collector current is still quite large. Explain briefly, say, within 10 lines.
3. Explain the reason why the base current in a transistor is usually much smaller than I E or lc in active
operation.
What causes collector current to flow when the emitter current is zero? What is this collector current
called?
4. Sketch typical output characteristic curves for a PNP transistor in CB configuration. Label all variables
and indicate active, cut-off and saturation regions.
5. Sketch typical CE output characteristic curves for an NPN transistor. Label all variables. Explain in
brief how you will compute the beta of the transistor from these characteristic curves?
6. For a certain transistor α = 0.98 and emitter current IE= 2 mA. Calculate the values of collector current
lc and base current IB.
The emitter current IE in a transistor is 2 mA. If the leakage current ICBO is 5 µA and α = 0.985,
calculate the collector and base currents.
7. What is the major difference between a bipolar and a unipolar device?
8. Sketch the basic structure of N-channel JFET. Draw the circuit symbols of(a) an N-channel JFET and
(b) P-channel JFET.
9. Draw typical drain characteristics curves of a JFET. Explain the shape of these curves qualitatively.
What do you understand by the term 'channel' in a JFET?
10. Briefly explain the working of a depletion-type MOSFET.
What are the two types of MOSFETs? How do they differ in their structure?
11. Why are the MOSFETs considered a better choice than the JFETs or BJTs in making ICs?
12. Plot and explain drain & transfer Characteristics of N channel D-MOSFET.
13. Explain Pinch off phenomena & pinch off voltage in FETs,
14. a. Describe in your own words why IG is effectively 0 A for a JFET transistor.
b. Why is the input impedance to a JFET so high?
c. Why is the terminology field effect appropriate for this important three-terminal device?

15. For a JFET given IDSS = 6 mA and VP = -4.5 V:

a. Determine ID at VGS = -2V and -3.6 V

b. Determine VGS at ID = 3mA and 5.5 mA.

UNIT 3
1. State properties of an ideal op amp.
Define CMRR, Slew rate and Input Offset Voltage.
2. Explain Differentiator and Integrator circuit using op amp. If input to a differentiator circuit is
Square Wave, plot its output.
3. Explain the use of op amp as (a) Inverting Amplifier (b) Non Inverting Amplifier (c) Unity Gain
Amplifier.
4. Describe use of op amp as Inverting and Non Inverting Summer ( Adder ).
5. What is the output voltage in the circuit of Fig. below ?

6. What is the range of the voltage-gain adjustment in the circuit of Fig. below?

7. Calculate the output voltage developed by the circuit of Fig. below for Rf = 330 KΩ.

8. Calculate the output voltage for the circuit of Fig. below

9. Calculate the CMRR (in dB) for the circuit measurements of V d = 1 mV, Vo = 120 mV, VC = 1
mV, and Vo = 20 mV.
10. Explain briefly various components of IoT system.
11. Compare Microprocessor and Microcontroller. Explain advantages of Microcontroller over
Microprocessor.
12. Explain and describe (i) Bluetooth Technology (ii) Wi Fi Technology. 13. Write short notes on (a)
Concept of Networking (b) Sensor Nodes
14. Explain briefly the concept of Cloud.

UNIT 4
1. What is a Logic gate?
 What is meant by a bit, pair, and quad?
2. Convert the decimal number 246.8 to base 2, base 8 and base 16.
3. Simplify following logic function using K Map and realize using NOR gates.
f(w,x,y,z)=πM(1,2,3,7,10,11)
f(w,x,y,z) = π M (3,4,5,6,7,10,11,15)
4. Using K map method, determine the minimal SOP expression for the following using decimal notation
f=Σ m(1,4,7,9,12,14)+Σ d(2,13)
5. Obtain the simplified expression in SOP form of F(a,b,c,d,e)=∑(1,2,4,7,12,14,15,24,27,29,30,31) using
K-maps.
6. Convert the following to the corresponding bases
i) (9BCD)16 = ( )8 ii) ii)
(323)4 = ( )5
7. What are the various logic gates, give the representation along with the truth table.
8. Derive the sum of min terms for the function f(a,b,c)=a′b+b′c′.
Implement the following function using only NAND Gates F = a.(b′+ c′) + (b. c)
9. Define Universal Gates.
Implement AND, OR, NOR by using NAND gates only.
10. What is the use of don’t care combinations?
11. Convert the following
12. i) (53.625)10 to ( )2 ii) (3FD)16 to ( )2 iii) (A69.8)16 to ( )10
13. Reduce the following function using K-Map.
F(A,B,C,D,E) = Σm(1,4,8,10,11,20,22,24,25,26)+d(0,12,16,17).
14. Differentiate SSI, MSI, LSI, VLSI Integrated Circuits by means of number of logic gates.
15. What the difference between VLSI and ULSI?

UNIT 5
1. Draw the block diagram of basic communication system. Explain functions of each block briefly.
2. Describe the need of modulation in communication system.
3. Define Amplitude Modulation. Derive the expression for AM modulated waveform. Define
modulation index of AM.

4. Explain Electromagnetic spectrum stating range of frequencies for each applications.

5. Explain working of Envelope Detector and state its limitations.
6. What is Data Communication and Computer network?
7. What are fundamentals of Mobile Radio?
8. Write brief notes on GPRS, GSM, CDMA.
9. Explain block diagram of basic Satellite Communication System.

10.What is a RADAR : Basics, Types & Applications?

ASSIGNMENT -1
16. Explain why the temperature coefficient of resistance of a semiconductor is negative?
17. What causes majority carriers to flow at the moment when a P region and an N region are brought
together? (b) Why does this flow not continue until all the carriers have recombined?
18. Explain the formation of the 'depletion region' in an open circuited PN junction.
State what you understand by barrier potential across a PN-junction. Also explain its significance.
19. Sketch, on the same axes, V-I characteristics for germanium and silicon diodes. Label clearly the values
of knee voltage and reverse saturation current.
 What do you understand by 'an ideal diode'? Draw its V-I characteristics.
20. Explain how the process of avalanche breakdown occurs in a PN-junction diode. How is it different
from zener breakdown?
21. Draw the circuit diagram of a half-wave rectifier. Explain its working. What is the minimum frequency
of ripple in its output?
22. Draw the circuit diagram of a full-wave rectifier using (a) centre-tap connection, and ( b) bridge
connection. Explain the working of each. What is the PIV in each case?
23. Explain why a bridge rectifier is preferred over a centre-tap rectifier.
Prove that the ripple factor of a half-wave rectifier is 1.21 and that of a fullwave rectifier is 0.482.
24. Name the two types of reverse breakdowns which can occur in a PN-junction diode. Which type occurs
at lower voltages?
25. Draw the circuit diagram of a voltage regulator circuit using a zener diode. Explain its working.
26. Determine the current I for each of the configurations of Fig. below using the approximate equivalent
model for the diode.

27. Determine Vo for each network of Fig. below for the input shown.

28. Sketch Vo for each network of Fig. below for the input shown.

29. Determine VL, IL , IZ , and IR for the network of Fig. below if R L= 180 ohms. Repeat if RL= 470ohms.

30. Write short notes on (a) LED (b) Varactor (c) Tunnel Diode (d) LCD

ASSIGNMENT - 2

15. For a certain transistor α = 0.98 and emitter current IE= 2 mA. Calculate the values of collector current
lc and base current IB.
The emitter current IE in a transistor is 2 mA. If the leakage current ICBO is 5 µA and α = 0.985,
calculate the collector and base currents.
16. What is the major difference between a bipolar and a unipolar device?
17. Sketch the basic structure of N-channel JFET. Draw the circuit symbols of(a) an N-channel JFET and
(b) P-channel JFET.
18. Draw typical drain characteristics curves of a JFET. Explain the shape of these curves qualitatively.
What do you understand by the term 'channel' in a JFET?
19. Briefly explain the working of a depletion-type MOSFET.
What are the two types of MOSFETs? How do they differ in their structure?
20. Why are the MOSFETs considered a better choice than the JFETs or BJTs in making ICs?
21. Plot and explain drain & transfer Characteristics of N channel D-MOSFET.
22. Explain Pinch off phenomena & pinch off voltage in FETs,
23. a. Describe in your own words why IG is effectively 0 A for a JFET transistor.
b. Why is the input impedance to a JFET so high?
c. Why is the terminology field effect appropriate for this important three-terminal device?
 10. For a JFET given IDSS = 6 mA and VP = -4.5 V:

a. Determine ID at VGS = -2V and -3.6 V

b. Determine VGS at ID = 3mA and 5.5 mA.

ASSIGNMENT - 3
1. State properties of an ideal op amp.
Define CMRR, Slew rate and Input Offset Voltage.
2. Explain Differentiator and Integrator circuit using op amp. If input to a differentiator circuit is
Square Wave, plot its output.
3. Explain the use of op amp as (a) Inverting Amplifier (b) Non Inverting Amplifier (c) Unity Gain
Amplifier.
4. Describe use of op amp as Inverting and Non Inverting Summer ( Adder ).
5. What is the output voltage in the circuit of Fig. below ?

6. What is the range of the voltage-gain adjustment in the circuit of Fig. below?

7. Calculate the output voltage developed by the circuit of Fig. below for Rf = 330 KΩ.

8. Calculate the output voltage for the circuit of Fig. below

9. Calculate the CMRR (in dB) for the circuit measurements of V d = 1 mV, Vo = 120 mV, VC = 1
mV, and Vo = 20 mV.
10. Explain briefly various components of IoT system.
11. Compare Microprocessor and Microcontroller. Explain advantages of Microcontroller over
Microprocessor.
12. Explain and describe (i) Bluetooth Technology (ii) Wi Fi Technology. 13. Write short notes on (a)
Concept of Networking (b) Sensor Nodes
14. Explain briefly the concept of Cloud.

ASSIGNMENT -4
1. Convert the decimal number 246.8 to base 2, base 8 and base 16.
2. Simplify following logic function using K Map and realize using NOR gates.
f(w,x,y,z)=πM(1,2,3,7,10,11)
f(w,x,y,z) = π M (3,4,5,6,7,10,11,15)
3. Using K map method, determine the minimal SOP expression for the following using decimal notation
f=Σ m(1,4,7,9,12,14)+Σ d(2,13)
4. Obtain the simplified expression in SOP form of F(a,b,c,d,e)=∑(1,2,4,7,12,14,15,24,27,29,30,31) using
K-maps.
5. Convert the following to the corresponding bases iii) (9BCD)16 = ( )8 iv) ii) (323)4 = (
)5
6. What are the various logic gates, give the representation along with the truth table.
7. Derive the sum of min terms for the function f(a,b,c)=a′b+b′c′.
Implement the following function using only NAND Gates F = a.(b′+ c′) + (b. c)
8. Define Universal Gates.
Implement AND, OR, NOR by using NAND gates only.

ASSIGNMENT -5
1. Explain Electromagnetic spectrum stating range of frequencies for each applications.
2. Explain working of Envelope Detector and state its limitations.
3. What is Data Communication and Computer network?
4. What are fundamentals of Mobile Radio?
5. Write brief notes on GPRS, GSM, CDMA.
6. Explain block diagram of basic Satellite Communication System.

7. What is a RADAR : Basics, Types & Applications?

 Link of Video Lecture
Sr. Unit (Uploaded to MS Stream
CO Topic
No. No. through FYStudyMat login,
prior to conduct of classes)
Introduction to OBE, Vision, Mission, PO, CO,
1 Syllabus etc

https://web.microsoftstream.com/video/ac8c44c
7-0f84-48be-be7b-2fff3744c83e
2 1 1 Semiconductors
https://web.microsoftstream.com/video/1caf7f6
2-1899-4be1-bf7c-e1a3d7e8f5ba
https://web.microsoftstream.com/video/30a1ba
3 1 Pn junction Diode, Depletion Layer
1 50-1c49-4a56-9f2b-7329933e3a56
https://web.microsoftstream.com/video/291f577
4 1
1 VI Characteristics, Ideal & Practical Diodes 1-9dc4-4a1b-ac3e-20fd08dfc63d
https://web.microsoftstream.com/video/912c10
5 1
1 Avalanche & Zener Breakdown e9-38d0-449d-938c-e1fb88f1cd59
https://web.microsoftstream.com/video/6182b1
6 1
1 Diode Configurations ( Series & Parallel) ad-edc0-46cc-b375-56723b9266ee
https://web.microsoftstream.com/video/31dfd0c
7 1
1 Diode Applications (Rectifiers ) 5-ce7d-43dd-b87d-110e4050e779
https://web.microsoftstream.com/video/59f66c1
8 1
1 Diode Applications (Clippers, Clampers) 3-b7dd-4711-bf07-b0ffedd08d48
https://web.microsoftstream.com/video/8d30e6
9 1 eb-74d3-4366-8285-b6ffffa835e0
Special Purpose two derminal Devices (LED &
1 Photo Diode)
https://web.microsoftstream.com/video/85ee4b
10 1 97-f61b-49e4-a317-899285e5de7f
Special Purpose two derminal Devices
1 (Varactor & Tunnel Diode)
https://web.microsoftstream.com/video/66bea5
11 2
2 Tranistor Construction & operations 9f-5f85-4d3f-820d-d0425d460ce5
 https://web.microsoftstream.com/video/fa77f16
12 2
2 Common Base e-98ef-4bd5-b533-ab6e651772ff
https://web.microsoftstream.com/video/08f3bf3
13 2
2 Common Emitter & Common Collector b-2e19-410d-afe6-e36bea0d7747
https://web.microsoftstream.com/video/0a4a7e
14 2
2 Construction Of JFETs 4f-4da7-401f-8551-116880a2916c
https://web.microsoftstream.com/video/f685997
15 2
2 Characteristics of JFETS e-a918-43ae-8cb3-746a05f7298a
https://web.microsoftstream.com/video/749be2
16 2
2 MOSFETS ( depletion & enhancement) 3c-9bea-41e1-9312-7b33ff047d1e
https://web.microsoftstream.com/video/e9eaef7
17 2
2 Characteristics of MOSFETS 2-cd3a-46fb-b6c2-0bc295ac0d6f
https://web.microsoftstream.com/video/bb8721
18 3
3 Introduction & basics Of Opamp e4-8e74-4f81-a916-e2f764f75fd6
Opamp Practical Circuits ( Inverting & https://web.microsoftstream.com/video/6a819a
19 3
3 Noninverting Amplifier, Unit Follower) 57-aeb8-42f7-996c-f0f3218e6368
Opamp Practical Circuits ( Summing Amplifier, https://web.microsoftstream.com/video/d289f7
20 3
3 Integrator, Differentiator,Comparators) 94-2865-428b-8835-bdaeb5d1262c
https://web.microsoftstream.com/video/a7683a
21 3
3 Differential & common mode operations, 67-6f32-474a-bd81-aff1a9c69c50
https://web.microsoftstream.com/video/e197c8
22 3
3 Componenets of IoT systems da-0d5f-438b-bf65-7f30e237ce8e
https://web.microsoftstream.com/video/e6e3a8
23 3
3 Microprocessor & Microcontroller a5-98af-46f1-9dbe-e191bc586a06
https://web.microsoftstream.com/video/d39d3a
24 3
3 Bluetooth & Wi Fi technology f6-95cb-4b59-9739-8b95db7f9e9d
https://web.microsoftstream.com/video/0dcf441
25 3
3 Concept of Networking & Cloud, sensor nodes 5-daed-40e2-913b-8854b9001673
https://web.microsoftstream.com/video/c0293d
26 4
4 Number System & representation 26-5732-40c3-853f-c1a58f397c6d
https://web.microsoftstream.com/video/216ccd
27 4
4 Basic and Universal Logic gates 20-c999-4611-9045-4d1b395fc499
Simplification of Boolean functions Using https://web.microsoftstream.com/video/df1d07
28 4
4 Boolean Algebra 07-4abb-4887-afb1-b6dd5952ef8d
Simplification of Boolean functions Using K https://web.microsoftstream.com/video/e5ee84
29 4
4 MAP 60-31de-4392-9271-b03e26fd6969
Simplification of Boolean functions Using K https://web.microsoftstream.com/video/b58e3b
30 4
4 MAP d1-2736-47b5-a1bb-318dc87625fd
https://web.microsoftstream.com/video/415a4e
31 4
4 Introduction To IC Technolog 1e-b0bc-466d-9438-61ce7c8ccb18
32 5 5 Basics of signal representation and analysis,
33 5 5 Elements of a Communication System
34 5 5 Need of modulation and typical applications
Fundamentals of amplitude modulation
35 5
5 techniques.
Fundamentals of amplitude demodulation
36 5
5 techniques.
37 5 5 Introduction to Data Communications
Evolution of mobile radio communication
38 5
5 fundamentals
39 5 5 GPRS, GSM, CDMA
40 5 5 Elements of Satellite & Radar Communication