Ec6302 Dec PDF
Ec6302 Dec PDF
b) x + xy = x
LHS: x + xy = (x + 1) + xy postulate 2(b)
= x (1 + y) 4(a)
= x(y + 1) 3(b)
=x.0 2(b)
=x 2(a)
2. Define – Noise-margin[M/J-16]
Noise Margin is defined as the maximum noise voltage added to an input signal of a digital circuit that
does not cause an undesirable change in the circuit output. It is expressed in volts.
De Morgan suggested two theorems that form important part of Boolean algebra.
They are:
i. The complement of a product is equal to the sum of the complements.
(AB)' = A' + B'
ii. The complement of a sum term is equal to the product of the complements.
(A + B)' = A'B'
4. Statethe advantages of CMOSlogic. [A/M – 15][A/M – 09]
i. Low power consumption: CMOS process provides lower power consumption and is easy to
scaling down.
ii. High input impedance: Gate of CMOS needs much lower driving current than base current of
bipolar.
iii. Reduced silicon area: Scaling down increases CMOS speed and reduces the area of the chip.
iv. Mature technology: CMOS processes are well established and continue to become more mature.
The powerful trust by leading edge digital memory and processors has led to continuous
improvement and down scaling of CMOS processes.
A prime implicant is a product term obtained by combining the maximum possible number of
adjacent squares in a map. If a minterm in a square is covered by only one prime implicant, that prime
implicant is said to be essential.
Minterms that have unspecified outputs for some input combinations are called don’t care terms.
We denote them by variable ‘x’ or ‘d’.
F= ((A+B+C)D)'
= (A+B+C)' + D'
i. Sum of products
Truth Table for NOR Gate and bubbled input AND gate
Y= (A’.B’)
Y= (A+B)’
A A’ B B’ A+B (Bubbled input AND
(NOR Gate)
gate)
0 1 0 1 0 1 1
0 1 1 0 1 0 0
1 0 0 1 1 0 0
1 0 1 0 1 0 0
Thus
(A+B)’ = A’. B’
The two input terminals of the NAND gate will be shorted and given as single input.
Fan out is defined as the number of standard loads that the output of the gate can drive without
impairment of its normal operation.
Fan in is defined as the number of inputs connected to the gate without any degradation in the
voltage level.
The combinational circuit of 3-bit parity generator:
Half Adder: The logic circuit that performs the addition of two bits is a half adder. It consists of 2
inputs and two outputs Sum and Carry.
Full Adder: The circuit that performs the addition of three bits is a full adder. It consists of 3
inputs and two outputs Sum and Carry.
10. Write down the difference between Demultiplexer and Decoder. [A/M – 15]
Demultiplexer Decoder
In parallel adders, sum and carry outputs of any stage cannot be produced until the
input carry occurs. This time delay in the addition process is called carry propagation delay.
This delay increases with increase in the number of bits to be added in an adder circuit.
13. What is the maximum number of outputs for a decoder with a six bit data word? (M/J – 09)
14. List out the differences between DEMUX and MUX. (M/J – 09)
16. What are the applications of Multiplexer and Demultiplexer? (M/J – 08)
1. Explain ROM
A read only memory(ROM) is a device that includes both the decoder and the OR gates within a single IC
package. It consists of n input lines and m output lines. Each bit combination of the input variables is
called an address. Each bit combination that comes out of the output lines is called a word. The number
of distinct addresses possible with n input variables is 2n.
3. Explain PROM.
PROM (Programmable Read Only Memory) It allows user to store data or program. PROMs use the fuses
with material like nichrome and polycrystalline. The user can blow these fuses by passing around 20 to
50 mA of current for the period 5 to 20μs.The blowing of fuses is called programming of ROM. The
PROMs are one time programmable. Once programmed, the information is stored permanent.
4. Explain EPROM.
EPROM(Erasable Programmable Read Only Memory) EPROM use MOS circuitry. They store 1’s and 0’s
as a packet of charge in a buried layer of the IC chip. We can erase the stored data in the EPROMs by
exposing the chip to ultraviolet light via its quartz window for 15 to 20 minutes. It is not possible to
erase selective information. The chip can be reprogrammed.
5. Explain EEPROM.
EEPROM (Electrically Erasable Programmable Read Only Memory) EEPROM also use MOS circuitry. Data
is stored as charge or no charge on an insulated layer or an insulated floating gate in the device.
EEPROM allows selective erasing at the register level rather than erasing all the information since the
information can be changed by using electrical signals
6. What is RAM?
Random Access Memory. Read and write operations can be carried out.
7. Define ROM
A read only memory is a device that includes both the decoder and the OR gates within a single IC
package.
In a ROM, each bit combination of the input variable is called on address. Each bit combination that
comes out of the output lines is called a word.
9. What are the types of ROM.
1. Masked ROM. 2. Programmable Read only Memory 3. Erasable Programmable Read only memory. 4.
Electrically Erasable Programmable Read only Memory.
In some cases the number of don’t care conditions is excessive, it is more economical to use a second
type of LSI component called a PLA. A PLA is similar to a ROM in concept; however it does not provide
full decoding of the variables and does not generates all the minterms as in the ROM
With a mask programmable PLA, the user must submit a PLA program table to the manufacturer.
The second type of PLA is called a field programmable logic array. The user by means of certain
recommended procedures can program the EPLA.
13. List the major differences between PLA and PAL PLA: Both AND and OR arrays are programmable
and Complex Costlier than PAL PAL AND arrays are programmable OR arrays are fixed Cheaper and
Simpler
14. Define PLD. Programmable Logic Devices consist of a large array of AND gates and OR gates that
Can be programmed to achieve specific logic functions.
15. Give the classification of PLDs. PLDs are classified as PROM(Programmable Read Only Memory),
Programmable Logic Array (PLA), Programmable Array Logic (PAL), and Generic Array Logic(GAL)
UNIT V