IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION, VOL. 72, NO.

1, JANUARY 2024 1015

Communication
A High Aperture Efficiency 1-bit Reconfigurable Reflectarray Antenna With
Extremely Low Power Consumption
Yinan Hao, Changjiang Deng , Xiaowei Cao , Youjia Yin , and Kamal Sarabandi

Abstract— In this communication, a 1-bit reconfigurable reflectarray reflector antennas and array antennas, which provides a cost-effective
antenna (RRA) providing high aperture efficiency is presented for beam solution for high-gain beam scanning applications [6], [7].
scanning applications. Each element is configured as an aperture-coupled
Microstrip patch antenna has a simple operation principle and is
patch antenna composed of a radiating patch, a slotted ground for
feed of the patch, a microstrip delay line, and a p-i-n diode switch. a promising candidate in reflectarray design due to its low profile
Unlike conventional methods, the p-i-n diode switch is not placed on the and ease of fabrication [8]. The phase of the reflected wave of a
microstrip line but instead is inserted strategically at the center of the patch antenna can be easily changed by varying the size of the patch
coupling slot on the ground layer. In this novel configuration, the elements [9], [10], the length of a delay line attached to its feed [11], [12],
of the RRA do not endure the loss through the p-i-n diode switches.
The loss associated with the p-i-n diode in the proposed configuration or rotating the patch about its surface unit normal [13], [14]. In order
is very small since only a small part of the RF currents flows through to achieve electronic beam scanning, reconfigurable components are
the diode in the ON state. Two phase states with a phase difference of added in the elements to dynamically change the reflection phase.
180◦ ± 20◦ are realized from 4.9 to 5.7 GHz. The reflection loss of Recently, numerous RRAs have been proposed that using p-i-n diodes
each element is limited to less than 0.1 dB in both the ON and OFF
states. To demonstrate the feasibility and performances of the proposed
[15], [16], varactors [17], [18], [19], and MEMS switches [20], [21],
approach, a 14 × 14-elements RRA is fabricated and measured. The [22]. However, RRA usually has much lower aperture efficiency than
measured aperture efficiency is above 18.8% in the entire band of their passive reflectarray versions. Apart from phase quantization loss,
4.9–5.7 GHz, with a peak value of 36.5%. Furthermore, the efficiency one main reason for lower aperture efficiency is that the tunable
stays almost unchanged, even when the equivalent resistor of the p-i-n components introduce extra loss. How to reduce the loss of elements
diode varies from 0.9 to 9 . This is used to lower the bias forward
currents of the p-i-n diodes to lower the power consumption to merely caused by reconfigurable components is worth exploring.
1.9 mW for the 196-elements RRA. 1-bit RRA is widely adopted in beam scanning applications that
Index Terms— Aperture-coupled patch, beam scanning, high aperture
provide a good tradeoff between design complexity and performance,
efficiency, reconfigurable reflectarray antenna (RRA). since only one p-i-n diode switch is needed for each element [23],
[24], [25]. Depending on the loading position of the p-i-n diode, 1-
bit RRA can be categorized into two types: 1) the p-i-n diode is
I. I NTRODUCTION on the radiator [26], [27], [28] and 2) the p-i-n diode is on a delay
High-gain antennas are in high demand in wireless communication line [29], [30], [31], [32]. For example, a p-i-n diode is placed at the
and radar applications [1]. In recent years, planar reflectarrays based center of the patch element in [23]. It controls the current path on the
on printed circuit technology have attracted great interest in high gain patch to produce 180◦ phase shift in two reflection states. A 12 × 12
antenna design [2], [3]. With the proliferation of advanced radars 1-bit RRA designed based on this concept is reported to have a peak
and communication networks, the need of reconfigurable reflectar- aperture efficiency of 15.3%. In [33], [34], and [35], the p-i-n diode is
ray antennas (RRAs) with beam scanning, such as reconfigurable located at the edge of the patch element, and by switching that on and
intelligent surface (RIS) in B5G communication, is on the rise [4], off, the reflection phase is changed. The concept of magnetoelectric
[5]. Compared to reflector antennas, the units of reflectarrays can be (ME) dipole antenna is also introduced in RRA element design [36],
modified to achieve electronic beam scanning. Compared to phased [37], [38]. In [36], a 1-bit RRA based on ME dipole is proposed.
array antennas, the spatial feeder of reflectarrays has much lower loss It achieves a maximum aperture efficiency of 24% at 12 GHz. In [39],
and much simpler structure. Therefore, RRA combines the merits of ring slot loaded with two p-i-n diodes is proposed. By setting the two
p-i-n diodes in ON and OFF states simultaneously, the slot works as a
Manuscript received 28 June 2023; revised 30 July 2023; 1-bit bidirectional radiator. In this type, the element has the merit of
accepted 24 August 2023. Date of publication 6 September 2023; date
simple structure, but the bias line will also radiate energy if a thick
of current version 9 February 2024. This work was supported by the
National Natural Science Foundation of China under Contract 62071037. substrate is used. Placing the p-i-n diode on a delay line can avoid
(Corresponding author: Changjiang Deng.) the adverse effects of the dc bias line. In this type, the configuration
Yinan Hao, Xiaowei Cao, and Youjia Yin are with the Beijing Key is more flexible, since the radiator and the delay line are on different
Laboratory of Millimeter Wave and Terahertz Technology, School of Inte- layers, which can be designed separately. For instance, an aperture-
grated Circuits and Electronics, Beijing Institute of Technology, Beijing
100081, China (e-mail: [email protected]; [email protected]; coupled patch element is proposed in [29]. P-i-n diode is used to
[email protected]). control the length of the current path on the delay line, which will
Changjiang Deng is with the Beijing Key Laboratory of Millimeter Wave produce 180◦ phase difference in the ON and OFF states. The 12 ×
and Terahertz Technology, School of Integrated Circuits and Electronics, 12 RRA designed with this approach has a peak aperture efficiency
Beijing Institute of Technology, Beijing 100081, China, and also with
the Tangshan Research Institute, Beijing Institute of Technology, Tangshan
of 15.2%. In the aforementioned 1-bit RRAs, the aperture efficiency
063099, China (e-mail: [email protected]). is relatively low and highly related to the equivalent resistor of the
Kamal Sarabandi is with the Radiation Laboratory, Department of Electrical p-i-n diodes. Larger resistor will lead to higher loss and decrease in
Engineering and Computer Science, University of Michigan, Ann Arbor, the aperture efficiency of RRA. This is due to the fact that majority
MI 48109 USA (e-mail: [email protected]). or all the RF currents pass through the diode in the ON state.
Color versions of one or more figures in this communication are available
at https://doi.org/10.1109/TAP.2023.3310579. In this communication, a novel 1-bit RRA is presented to achieve
Digital Object Identifier 10.1109/TAP.2023.3310579 high aperture efficiency and low power consumption. The 0◦ /180◦
0018-926X © 2023 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.
See https://www.ieee.org/publications/rights/index.html for more information.

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1016 IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION, VOL. 72, NO. 1, JANUARY 2024

Fig. 2. Signal flow and reflection loss with different equivalent resistors
when the p-i-n diode is in the ON state. (a) Element I. (b) Element II.

the positive pole of the p-i-n diode and the ground plane to create
an RF short and block the dc signal short-circuiting. An open-circuit
stub is designed on the bias line to suppress RF signal from flowing
over the dc line. Fig. 1(d) shows the equivalent circuits of the p-i-n
diode. According to the datasheet of Skyworks SMP 1340-079LF,
the p-i-n diode is modeled as a series circuit of a lumped resistor
Fig. 1. Configuration of the proposed 1-bit reconfigurable element. (R = 0.85 ) and an inductor (0.7 nH) in the ON state and is modeled
(a) Three-dimensional exploded view. (b) Layout on the upper and middle as a series circuit of a lumped capacitor (0.18 pF) and an inductor
substrate layers. (c) Side view. (d) Equivalent circuits of the p-i-n diode in the (0.7 nH) in the OFF state. The 1-bit element is simulated by using
ON and OFF states. px = py = 17.5, w = 25, s1 = 11, sw = 2, f w = 1, f 1 = 8,
t1 = t2 = t3 = 1, and h 1 = h 1 = 2 (unit: mm).
infinite periodic boundary combined with Floquet port excitation.
From the equivalent circuit, it is known that the equivalent resistor
reflection phase of the aperture-coupled patch element is controlled (R) in the ON state is the main source of loss introduced by the
by a single p-i-n diode. Low loss is achieved by placing the p-i-n diode. To reduce the loss caused by p-i-n diode, a novel 1-bit
p-i-n diode on the slotted ground rather than on the delay line in reconfigurable element is proposed. Fig. 2 compares the geometry
conventional method. The reflection loss of the element is within and performance of two types of elements: 1) the conventional
0.1 dB in both ON and OFF states. To the best of our knowledge, design where a p-i-n diode is placed in series with a delay line and
this is the first rendition of an element of RRA that is insensitive 2) proposed design where the p-i-n diode is placed in the middle of
to the loss of the p-i-n diode. This property is used to decrease the coupling slot.
bias current and power consumption. A 14 × 14 1-bit RRA based on Element I is a conventional aperture-coupled patch unit, where the
the placement of the p-i-n diode on coupling slot is designed. The p-i-n diode is placed in series on the microstrip delay line. 0◦ /180◦
measured peak aperture efficiency of the RRA achieves 36.5%. reflection phase is obtained by controlling the length of the delay
line. In the ON state, electromagnetic signals received to the delay
line then are reflected back at the end of the line. In this topology, all
II. R ECONFIGURABLE E LEMENT D ESIGN the signals pass through the diode twice when the switch is on and
Fig. 1 shows the structure of the proposed element. It consists of makes the element sensitive to the resistive loss of the p-i-n diode.
three substrate layers and four metallic layers. The upper and middle In Fig. 2(a), the reflection loss in the ON state deteriorates rapidly as
substrate layers are F4BM with the relative permittivity of 2.65, loss the value of the resistor increases. The reflection loss reaches 4.2 dB
tangent of 0.002, and thickness of 1 mm. The lower substrate is when the value grows to 10 . This means that most of the energy is
FR4 with the relative permittivity of 4.4, loss tangent of 0.02, and absorbed by the resistor. This topology is not suitable for p-i-n diode
thickness of 1 mm. The element periodicity is 25 mm, which is about (e.g., MACOM MADP-000907, R = 7.8 ) that has large equivalent
0.45 wavelength at the center frequency of 5.4 GHz. A square patch resistor.
is printed on the top of the upper substrate layer as the radiator. The On the contrary, in Element II, namely, the proposed element, the
slot-loaded ground plane is printed on the top of the middle substrate p-i-n diode is loaded at the center of the slot. In the ON state, the slot
layer. Phase delay line and dc bias line are printed on the bottom of is short-circuited, and electromagnetic signals received by the patch
the middle substrate layer. The reflecting ground plane is printed on are directly reflected back by the ground plane in the middle layer.
the top of the lower substrate layer. There are 2-mm-thick air layers Only a small portion of incident energy flows through the p-i-n diode.
between the adjacent substrate layers. This ensures that the element in the ON state is insensitive to the
A p-i-n diode is placed at the center of the slot etched on the resistive loss of the p-i-n diode. In Fig. 2(b), the reflection loss in the
ground plane on the top of the middle substrate layer. The negative ON state stays very low over the entire band and is almost independent
pole of the p-i-n diode is connected with the ground plane, and the of the forward resistance of the p-i-n diode as the resistance changes
positive pole is connected to the dc bias line on the back of the middle from 0.85 to 30 . The reflection loss is merely 1.6 dB even the
substrate through a metallic via. A 5-pF capacitor is added between value increases to 30 . This topology is suitable for p-i-n diodes

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IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION, VOL. 72, NO. 1, JANUARY 2024 1017

Fig. 5. Reflection coefficient of a reflectarray element at different oblique

incident angles. (a) P-i-n diode is in the ON state. (b) P-i-n diode is in the
OFF state.

Fig. 3. Current distribution of the two elements in the ON and OFF states.
(a) Element I. (b) Element II.

Fig. 6. Photograph of the fabricated 1-bit RRA.

The element with different oblique incidence angles is investigated.

As shown in Fig. 5, the reflection loss is always below −0.2 dB in
both ON and OFF states, when the oblique incidence angle is swept
Fig. 4. Parameter sweep of Element II. (a) Phase difference with different from 0◦ to 50◦ . The slope of the reflection phase becomes steep in
values of sl . (b) Phase difference with different values of f w . the ON state, while becomes gentle in the OFF state.

that may present a large equivalent resistor. Compared with Element

I, Element II has the merit of much lower sensitivity to the loss of III. R EFLECTARRAY D ESIGN AND R EALIz ATION
the p-i-n diode. A 14 × 14 1-bit RRA is designed to verify the beam scanning
The current distribution of Elements I and II in the ON and OFF based on the proposed element. Fig. 6 shows the photograph of the
states at 5.4 GHz is shown in Fig. 3. For Element I that integrates fabricated prototype. The focal length to diameter (F/D) ratio is 1.03.
the p-i-n diode on the delay line, the length of current path on the To reduce the blocking of the reflecting wave, the feed horn is located
delay line is responsible for providing the desired reflection phase. in the xoz plane above the reflectarray surface with an oblique angle
As shown in Fig. 3(a), the currents will be reflected back at the of 20◦ to the normal direction. 3-D-printed auxiliary support is used
position of the p-i-n diode in the OFF state or at the end of the delay to fix the horn antenna and guarantee alignment accuracy. The dc bias
line in the ON state, leading to 180◦ phase difference. For Element II circuit in each element consists of a thin dc line and a fan-shaped
that integrates the p-i-n diode on the slot, the current path on the line to isolate RF signals. A field-programmable gate array (FPGA)
ground plane is crucial to determine the reflection phase. As shown circuit board is employed to control the p-i-n diodes individually.
in Fig. 3(b), the current distribution on the ground plane in the ON To obtain the required dc voltage of the p-i-n diodes, 240- resistor
state is similar to that a ground plane with no slot, and thus, the is placed in series on each dc bias line.
delay line behind the slot is not excited. The incident wave is simply Beam scanning is achieved by controlling the ON and OFF states of
reflected from the patch antenna. In the OFF state, the slot is excited the p-i-n diodes. The theorical analysis of beamforming of the 1-bit
and couples the incident wave to the delay line, which is reflected RRA in desired direction can be found in textbook [6]. The reference
back at the end of the delay line. Basically, the extra path length of phase is optimized to improve the aperture efficiency of the RRA.
the delay line is responsible for the 180◦ phase difference between Fig. 7 shows the simulated and measured radiation patterns in
the ON and OFF states of the p-i-n diode. the two principal planes at 5.4 GHz. The beam scanning range is
Parametric analysis is carried out to optimize the bandwidth of from −50◦ to 50◦ in the xoz plane and from 0◦ to 50◦ in the
Element II. Fig. 4 shows the influence of two key parameters on yoz plane due to symmetry. Good agreement is observed between
the phase difference between the ON and OFF states. It is seen that the simulated and measured results. The beam pointing error is less
the slope of the curve becomes flat when the length of the slot than 1.5◦ at all the angles. The measured cross polarization is below
(sl ) increases. When sl = 11 mm, the bandwidth with 180◦ ± 20◦ −22 dB in the xoz plane and −23 dB in the yoz plane. In the xoz
variation achieves the maximal value. The curve can shift upward or plane, the simulated and measured gains at 0◦ is 21.8 and 21.5 dBi,
downward when the width of the delay line ( f w ) changes. It indicates respectively. The gains in the negative angles are slightly lower than
that Element II has good ability for optimizing the bandwidth. The the gains at the corresponding positive angles due to the blockage
reflection loss stays stable in parametric sweep and is not shown for of the feed horn antenna and auxiliary support. A peak measured
brevity. gain of 22.5 dBi is observed at the angle of +20◦ , corresponding

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1018 IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION, VOL. 72, NO. 1, JANUARY 2024

TABLE I
L OSS B UDGET FOR THE B ROADSIDE B EAM

TABLE II
P OWER C ONSUMPTION OF THE RRA W ITH
D IFFERENT VALUES OF R ESISTOR

Fig. 7. Radiation patterns of the 1-bit RRA in the (a) xoz plane and
(b) yoz plane.
IV. P OWER C ONSUMPTION OF THE RRA
As analyzed in Section II, the proposed 1-bit RRA is insensitive
to the resistor loss of the p-i-n diodes, because only a small portion
of currents flows through the diodes. In order to verify this idea, the
value of the equivalent resistor for the p-i-n diode is dynamically
changed by deploying a bias circuit with tunable bias current.
According to the datasheet of SMP 1340-079LF diode, the value
of the equivalent resistor will increase, if the forward dc bias current
decreases. It should be mentioned that this rule is also suitable for
other kinds of p-i-n diodes. As listed in the datasheet, the equivalent
resistance in the ON state is 0.9  at 25 ◦ C room temperature,
when the bias current is 10 mA, but this can increase to 8.95 ,
when the bias current is decreased to 0.02 mA. Considering that the
Fig. 8. Simulated and measured aperture efficiency with 0◦ beam. bias voltage of p-i-n diode is stable, the power consumption of the
p-i-n diode will be greatly reduced, if lower bias current is used.
to a peak aperture efficiency of 36.5%. The reason that higher gain This property is applied to design RRA with extremely low power
is obtained at the angle of +20◦ is mainly caused by the mirror consumption, since Element II can operate with larger forward biased
reflection from ground plane. The gain drop from the broadside beam resistance obtained by lower forward biased current.
to the maximal scanning beam is 2.4 dB in the xoz plane and 3.4 dB In order to construct tunable bias current for the RRA, a simple
in the yoz plane. The sidelobe level (SLL) is below −5.5 dB in the bias circuit is designed, as shown in Fig. 9. A fixed beam pointing to
xoz plane, which is a bit high. This is caused by specular (mirror) the normal direction of the RRA is selected as the representative.
reflection of the incident wave and the blockage of the feed structure. Considering that the phase distribution is fixed, FPGA board is
In addition, the 1-bit phase quantization deteriorates the SLL to some replaced by a much simpler bias circuit without reconfigurable ability,
extent. In the yoz plane, the SLL is below −11.5 dB. The SLL will and the 196 p-i-n diodes can choose high-level or low-level bias
be reduced when the size of the RRA increases. voltage based on their ON or OFF states. All the forward biased p-i-n
The simulated and measured aperture efficiencies of the proposed diodes are connected together, and all the p-i-n diodes in the OFF
1-bit RRA with broadside beam are shown in Fig. 8. Peak aperture state are short-circuited to the ground plane. In this way, only one
efficiency is obtained at 5.4 GHz, where the simulated and measured adjustable resistor is needed to change the bias currents for all the
values of 0◦ beam are 30.1% and 28.5%, respectively. In the p-i-n diodes simultaneously, as shown in Fig. 9(a).
4.9–5.7-GHz bandwidth, the simulated aperture efficiency is above Fig. 9(b) shows the required phase distribution of the RRA for
20% and the measured value is above 18.8%. It confirms the 0◦ beam. The number of elements with high-level voltage is 90,
characteristic of high aperture efficiency of the proposed RRA design. corresponding to 45.9% of all the 196 elements. The control board is
Table I lists the loss factor of gain drop for the RRA. It is seen designed according to the phase distribution. All the forward biased
that the element loss is very small, and the 1-bit phase quantization elements are chosen to connect with the adjustable resistor, while the
loss is the main source of gain drop. off elements are connected to the ground plane through vias.

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IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION, VOL. 72, NO. 1, JANUARY 2024 1019

TABLE III
C OMPARISONS B ETWEEN THE P ROPOSED D ESIGN W ITH OTHER 1- BIT RRAs

Fig. 10. Broadside gain of the RRA with different resistances of p-i-n diodes.

of the p-i-n diode. It is seen that the simulated and measured gains
show good consistency. The measured gain stays around 21.0 dBi,
when the value of the equivalent resistor changes from 0.9 to 9 .
Even if the equivalent resistor of the p-i-n diode is increased by
a factor of ten, the simulated gain of the RRA is reduced by only
0.3 dB, and the measured gain is reduced by only 0.5 dB. It confirms
that the radiation performance of the proposed RRA is insensitive to
the value of the equivalent resistor for resistance values below 10 .
The total power consumption of the proposed 196-elements RRA
under different forward bias currents is listed in Table II. The bias
current is measured directly from the dc current source and is divided
by the number of diodes in the ON state. The voltage on the p-i-n
diodes is calculated by subtracting the dc voltage from the source
Fig. 9. Design of the bias circuit. (a) Schematic of the fixed-beam control and the measured voltage on the adjustable resistor. It is shown that
board. (b) Phase distribution of the RRA with 0◦ beam. the power consumption of the whole RRA is significantly reduced,
as the bias current decreases. In a typical bias configuration of the
The bias current of the RRA is dynamically changed by varying p-i-n diodes when the bias current of each element is set at 8.83 mA,
the value of the adjustable resistor R2 . Large R2 will lead to small the total consumption of the whole RRA reaches to 731.1 mW.
bias current, which is calculated by using the following equation: By decreasing the bias current of each element to 0.03 mA, the
power consumption of the whole RRA is merely 1.9 mW. That is,
Ibias = (VDC −V diode )/R2 (1)
the required power is reduced by a factor of 385 without changing
where VDC is the dc voltage supplied to the control board, Vdiode is the reflectarray’s performance significantly (a decrease of only 0.5 dB
the bias voltage of p-i-n diode in the ON state, R2 is the value of the in measured gain). This proves that the proposed RRA can perform
adjustable resistor, and Ibias is the sum current of all the p-i-n diodes very well with extremely low power consumption.
in the ON state. Table III compares the performances of the proposed RRA with
The influence of the bias current and equivalent resistor of the p-i-n other referenced 1-bit RRAs. It is clearly observed that the proposed
diode on the performances of the proposed RRA is discussed. Fig. 10 RRA has a much higher aperture efficiency than other referenced
shows the simulated and measured gains of the RRA with broadside 1-bit RRAs, which is mainly beneficial from the low loss of the
beam at 5.4 GHz. The simulated value of the equivalent resistor can element. What is more, due to the unique property that the element
be changed directly in HFSS software, while the measured value is is insensitive to the resistive loss and bias current of the p-i-n diode,
obtained by setting the proper bias current according to the datasheet the proposed RRA features extremely low power consumption.

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1020 IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION, VOL. 72, NO. 1, JANUARY 2024

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