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Lab 2 Report - 1201200547

This document summarizes a lab report on studying enhancement type MOSFETs through simulation. The lab involved building MOSFET circuits without and with resistors and verifying equations for drain current as a function of gate-source and drain-source voltages. Key results and equations were proven through calculation and by comparing to graph outputs.

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20 views6 pages

Lab 2 Report - 1201200547

This document summarizes a lab report on studying enhancement type MOSFETs through simulation. The lab involved building MOSFET circuits without and with resistors and verifying equations for drain current as a function of gate-source and drain-source voltages. Key results and equations were proven through calculation and by comparing to graph outputs.

Uploaded by

heheboy2403
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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FACULTY OF ENGINEERING AND TECHNOLOGY

DEE 5026
ELECTRONICS 2
Trimester 2, 2020/2021 Session

LAB REPORT
LAB 2: Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)

Student Name PUVANESWARAN A/L SIVAKUMAR


ID Number 1201200547

Date of Submission 20/1/2021


Received By
(sign, stamp, date)
1. Objective: A study on enhancement type MOSFET through simulation.

2. Apparatus: PSpice Student Version

3. Results:

a) Section A:
𝐾𝑝 𝑊
1) Given VTO=VGST and . = K, find VGST and K.
2 𝐿

2) Verify the result in step 3 by using the MOSFET enhancement equation.

2|Page
b) Section B:
1) Verify the result from step 1 by using relevant equation. Provide explanation as well.

3|Page
2) Verify the result through calculation.

VDS = VGS – VGST

6V – 1V = 5V

4|Page
c) Section C:

1) Verify the result in step 2 by using equation

5|Page
4. Discussion:
The MOSFET transistor is used to perform this experiment. Two types of circuits are conducted
this experiment. The circuit was built without resistors in section A. The id in section A and
another in Equation 1 are also shown below. After section B shows the ID using the same
equation, the following Equation 2 is also shown. The VDS must then be proved to have the
same value as shown in Graph 2 in the calculation form. Finally, a 2.5K resistor was added to the
collector on the second circuit. The idea was that when the VG varies and the constant VDD is
calculated at 10 V the two different IDs were proven. Later, equation 1 and equation 2 are also
proved to be this.

Equation 1: ID= K(VGS – VGST)²


When (VDS ≥ VGS – VGST)

Equation 2: (ID= K[2(VGS-VGST)VDS-VDS²]


When (VDS ≤ VGS – VGST)

5. Conclusion:
In conclusion, this lab session is proven and understanding real-time current and voltage value
vs in form of calculation, and to analyze the graph in different situation.

6|Page

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