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(EEE-3109) Lecture-8 (Effect of Doping)

The document discusses the effect of doping on semiconductors. It explains intrinsic and extrinsic semiconductors and how doping with donors or acceptors creates an excess of electrons or holes. The position of the Fermi level is determined by the doping concentration and temperature.

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20 views35 pages

(EEE-3109) Lecture-8 (Effect of Doping)

The document discusses the effect of doping on semiconductors. It explains intrinsic and extrinsic semiconductors and how doping with donors or acceptors creates an excess of electrons or holes. The position of the Fermi level is determined by the doping concentration and temperature.

Uploaded by

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EEE-3109: Electronic Devices

Lecture #8: Effect of Doping

Mainul Hossain, Ph.D.


Assistant Professor
Department of Electrical and Electronic Engineering
University of Dhaka
[email protected]
sites.google.com/du.ac.bd/mainulgroup
Reading

Chapter-2

Chapter 2
Chapter-1

2
Intrinsic Semiconductors

3
Silicon as a Semiconductor Material

[EEE-3109] Dr. Mainul Hossain, 2022 4


Intrinsic Silicon: T = 0K

[EEE-3109] Dr. Mainul Hossain, 2022 5


Intrinsic Silicon: T>0K

[EEE-3109] Dr. Mainul Hossain, 2022 6


Intrinsic Silicon: T>0K; Apply an Electric Field E
- +
E

[EEE-3109] Dr. Mainul Hossain, 2022 7


Intrinsic Silicon: How many bonds are broken at room temperature?
B4 C1 B1

B3
Total # of atoms in the unit cell:
C5
A1 B2 4 + 8×(1/8) + 6 ×(1/2) = 8
A2
C4
C2
# of atoms/unit volume = atomic density
C6
A3
B5
= 8/a3 = 5×1028/m3
B8 A4
Each atom forms 4 bonds
C3
Bond Density = 4×5×1028/m3 = 2×1029/m3
B7 B6

[EEE-3109] Dr. Mainul Hossain, 2022 8


Fermi Level: Intrinsic Semiconductor

[EEE-3109] Dr. Mainul Hossain, 2022 9


Carrier Concentration in Intrinsic Semiconductor

[EEE-3109] Dr. Mainul Hossain, 2022 10


Intrinsic Carrier Concentration and Fermi Level

This equation states that the np product is a


constant for a given semiconductor and T,
independent of the dopant concentrations.

ni is called the intrinsic carrier concentration. ni is a


strong function of Eg and T, but is independent of
the dopant concentration. ni at room temperature is
roughly 1010cm–3 for Si and 107 cm–3 for GaAs,
which has a larger band gap than Si. For silicon, the
np product is therefore 1020cm–6 regardless of the
conductivity type (P type or N type) and the dopant
concentrations.

[EEE-3109] Dr. Mainul Hossain, 2022 11


Recall: Effective Density of States

[EEE-3109] Dr. Mainul Hossain, 2022 12


Intrinsic Carrier Concentration: Temperature Dependence

Slope=> Band Gap

[EEE-3109] Dr. Mainul Hossain, 2022 13


Intrinsic Carrier Concentration: Example Problem

ni = 1016 /m3 = 1010 /cm3

ni = 1016 /m3 = 1010 /cm3

[EEE-3109] Dr. Mainul Hossain, 2022 14


Extrinsic Semiconductors

15
Extrinsic Semiconductors: Donors (N-type)

[EEE-3109] Dr. Mainul Hossain, 2022 16


Extrinsic Semiconductors: Acceptors (P-type)

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Donors and Acceptors in Silicon

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Maximum Doping Density in Silicon

[EEE-3109] Dr. Mainul Hossain, 2022 19


Summary: Donors and Acceptors

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Fermi Level: Extrinsic Semiconductor

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Donor/Acceptor Levels with respect to Fermi Level

[EEE-3109] Dr. Mainul Hossain, 2022 22


Donor/Acceptor Levels with respect to Fermi Level: Temperature Dependence

# of electrons in CB =n< ND # of electrons in CB =n= ND


# of electrons in CB =n=0

# of donor atoms= ND # of donor atoms = ND


# of donor atoms= ND =0

[EEE-3109] Dr. Mainul Hossain, 2022 23


Intrinsic/n-type/p-type: DOS, f(E) and Carrier Conc

[EEE-3109] Dr. Mainul Hossain, 2022 24


Intrinsic/n-type/p-type: DOS, f(E) and Carrier Conc

Betty Lise Anderson and Richard L. Anderson, “Fundamentals of Semiconductor Devices”, McGraw-Hill

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Dopants: Complete Ionization

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Freeze Out

[EEE-3109] Dr. Mainul Hossain, 2022 27


Carrier Concentration vs Temperature (n-type)

[EEE-3109] Dr. Mainul Hossain, 2022 28


Example Problem: Donor Ionization
Donor is Phosphorus

Note:
If we calculate f(E) for Ec-EF=146eV,
probability that Ec is occupied is
only 0.003!!. We cannot directly do
Ec-EF because there is a donor level
involved in between! We need to
use Ed-Ef and find the probability
that Ed is occupied by electrons
(not-ionized).

[EEE-3109] Dr. Mainul Hossain, 2022 29


Fermi Level in Terms of Intrinsic Carrier Concentration and Dopant Density

[EEE-3109] Dr. Mainul Hossain, 2022 30


Fermi Level in Terms of Effect Density of States and Dopant Density

[EEE-3109] Dr. Mainul Hossain, 2022 31


Fermi Level vs Doping Concentration at fixed Temperature

3kT

3kT

[EEE-3109] Dr. Mainul Hossain, 2022 32


Fermi Level vs Doping Concentration at Varying Temperature

Degenerate Semiconductor, doping>1019cm-3


EC-EF=EF-EV ~20meV, Boltzmann Approx. is not valid

Location of Fermi level vs. dopant concentration in Si at 300 and 400 K.


At any given concentration, EC-EF and EF-EV increases with T

[EEE-3109] Dr. Mainul Hossain, 2022 33


Charge Neutrality in Extrinsic Semiconductors

[EEE-3109] Dr. Mainul Hossain, 2022 34


Example Problem

[EEE-3109] Dr. Mainul Hossain, 2022 35

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