Building A Semiconductor Fab
Building A Semiconductor Fab
For the last several decades, one avenue of technological progress has towered
over nearly everything else: semiconductors. Semiconductors are materials
that can have their conductivity varied by many orders of magnitude, which
makes it possible to selectively block and allow the >ow of electrons. This
property makes it possible to manufacture all sorts of electronic devices, not
least of which is the digital computer.
As semiconductor technology has advanced over the past several decades, the
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cost and size of electronic computation has steadily fallen, making the PC, the
internet, and mobile phones all possible. Today, semiconductors in the form
of powerful GPUs that can perform enormous numbers of matrix
multiplications are the keystone for advancing AI technology. Increasingly
available computation to do enormous amounts of search and learning drives
progress in things like game-playing AI, computer vision, and large language
models (LLMs).
As Moore’s Law has marched forward, transistors (an electronic switch which
is the fundamental building block of integrated circuits) have gotten smaller
and cheaper. In 1954, the Rrst transistor radio, the TR-1 had 4 transistors
which cost $2.50 apiece ($29.03 in 2024 dollars). Today, an AMD Ryzen
processor with 9.9 billion transistors is on sale for $650, or about $0.000000066
per transistor; in other words, since the 1950s the cost of a transistor has
fallen by about a factor of 300 million.
The same shrinking and cheapening has happened for every semiconductor
component. But at the same time, the facilities to manufacture them have
become increasingly expensive. In the late 60s and early 70s, a semiconductor
fabrication facility (or ‘fab’) cost on the order of $4 million (~$31 million in
2024 dollars). Today, a modern fab can cost $10-$20 billion or more. Intel is
building a pair of fabs in Arizona which are projected to cost $15 billion
apiece, and Samsung’s fab in Taylor, Texas is projected to cost $25 billion.
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These enormous costs are ultimately due to the same factor that has steadily
driven down the cost of semiconductors: Moore’s Law, the observation that
the number of components on an integrated circuit tends to double every two
years. (There is a Moore’s Second Law, also known as Rock’s Law, which
posits that the cost of a semiconductor fab doubles every four years.) The
smaller semiconductor components get, the more di`cult it is to create the
conditions to manufacture them.
If we sliced a computer chip down the middle, and looked very, very closely,
we would see that it is composed of a series of layers. Here is a cross section
of a chip made with Intel’s current manufacturing process:
At the bottom of the chip, the area marked FEOL (front end of line) on the
graphic above are the semiconductor components themselves: transistors,
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capacitors, resistors, diodes, and all the other parts created out of silicon to
make a microchip. 2 These individual components will be connected together
using microscopic metal wires, the layers in the area marked BEOL (back end
of line). Because of the enormous number of components in a modern
electronic chip, this wiring must be routed on separate layers, which are
separated by electrical insulators known as dielectrics. Intel’s current process,
for instance, consists of 15 layers of metal wiring. This wiring gets connected
together and to the semiconductor components through holes in the layers
known as ‘vias.’
Chips are made by building up this complex structure one layer at a time.
Starting with a wafer of extremely pure silicon, layers of material are added,
portions of the layer are removed, more material is added (or existing material
is modiRed), and so on, until the entire structure is complete. This fabrication
method is known as the planar process, and it was invented at Fairchild
Semiconductor in 1959 by Jean Hoerni. It’s what makes integrated circuits,
and modern computer technology, possible.
Layering
Deposition methods have also evolved over time as features have shrunk.
Current common layering methods include thermal oxidation (exposing
wafers to oxygen in a furnace, which creates a thin layer of silicon dioxide on
the wafer surface), chemical vapor deposition (CVD) (where gaseous chemicals
are brought together, depositing their reactants on the surface of the wafer)
and sputtering (where a solid material is bombarded with plasma ions,
causing atoms to break free and be deposited on the wafer’s surface). The
small size of modern semiconductor components demands that these layering
methods are capable of extreme precision; modern atomic layer deposition
methods, for instance, are capable of creating a single layer of atoms at a time.
Patterning
From here, the wafer will be etched: a corrosive chemical will be applied to
the wafer, eating away the material exposed by the removed photoresist and
inscribing the pattern onto the wafer itself. Etching can be “wet” (by exposing
the wafer to liquid chemicals such as hydro>uoric acid) or “dry” (by exposing
the wafer to gasses like >uorine which have been energized into a plasma).
Aler etching, the remaining photoresist is removed.
Doping
Another key supporting process is cleaning. Because the tiniest stray particle
can cause a microchip to malfunction, wafers must be constantly cleaned with
solvents and extremely pure water. In a modern fab, a wafer might get cleaned
200 times or more during the production process. And to ensure that
processes are working correctly, fabs make extensive use of metrology —
measuring the wafer at various points in the process to determine if there
have been any manufacturing mistakes or defects.
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Process flow diagram of a semiconductor fab, via Xiao 2012.
By applying these four basic processes over and over again, along with the
various support processes, the structure of a microchip is slowly built up. And
as more transistors have been crammed onto an integrated circuit, this
structure (and the process for creating it) has become increasingly complex.
Early integrated circuits could be made with just Rve to ten diderent masks
and dozens of process steps, but a modern leading-edge microchip might
require 80 or more masks and thousands of separate process steps.
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Process flow for a simple nine mask CMOS chip circa the 1980s,
via Embedded Related. Today, leading-edge chips require 80 or so
masks, and have much more complex process flows.
Once the wafer has gone through all these steps and the structure of the
circuit is complete, it proceeds to assembly and packaging. This is where the
wafers are cut apart into individual chips, each chip is connected to wires (and
to any other chips, as with advanced packaging) and is encased in a protective
coating. Packaging might be done at the semiconductor fab, or at another
facility entirely.
But when these process steps are being used to make components whose size
is measured in the billionths of a meter, manufacturing complexity is
enormously magniRed. With most manufacturing processes, even those using
precision methods to produce interchangeable parts, there is a fair degree of
tolerance in the process. If a part is a fraction of a millimeter too long or too
short, it will still Rt. If the impurity content of a metal is a tiny bit too high,
the metal can still be used. If a process runs slightly too fast or too slow, the
output is still usable.
And as semiconductor features have gotten smaller, the problem has only
gotten more di`cult. As transistors shrank, Intel found that even the most
innocuous equipment change — using a slightly longer pipe or cable, for
instance — could cause process disruptions to new fabs and cause months or
years of lower yields. To combat this, Intel instituted a process known as Copy
EXACTLY! New fabs would be identical to existing fabs to the extent
possible, right down to the color and brand of the paint on the walls.
The cleanroom level contains the process tools: the individual pieces of
equipment that perform the various operations discussed above. Tools range
from lithography machines (such as ASML’s EUV machines), to chemical
vapor deposition machines, to ion implanters, to “wet benches” for cleaning
and etching, and so on. These machines are made by a small handful of
specialty manufacturers such as ASML, Lam Research, Applied Materials, and
Tokyo Electron, and are incredibly expensive. Major process machines can
cost $5-$10 million, and some can cost upwards of $100 million. ASML’s
cutting edge photolithography machines cost nearly $400 million.
These tools might perform one speciRc process step (such as furnaces for
wafer heating) or integrate several individual process steps. Applied
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Materials, for instance, makes machines which incorporate multiple layering
and surface preparation steps. To produce a large number of wafers (a modern
microprocessor or “logic” fab might produce 40 to 50,000 wafers a month; a
fab producing memory might produce 120,000), a large number of tools are
required, 1,000 or more.
Process tools will be clustered together by type; this allows the tools to share
requirements for things like chemical and gas lines (it’s easier to run piping if
all the demand for a certain chemical is in one place), and it makes it possible
to isolate certain contaminants. Since copper impurities can have catastrophic
edects on semiconductor behavior, parts of the process that use copper (such
as the tools depositing microscopic copper wiring) might be isolated from
other parts of the fab. HVAC systems will similarly be isolated between
diderent process zones. To minimize interference from things like columns or
load-bearing walls, the roof of the fab is typically supported by large, long-
spanning trusses which allow the cleanroom space to be as open as possible.
In addition to these large HVAC systems, the materials and process tools used
in the cleanroom need to be specially designed not to emit particles. To
minimize contamination from people inside the cleanroom, workers don
bunny suits in a special gowning area before entering, and go through a
special cleaning procedure.
When it arrives at the process tool, the FOUP can be connected to a special
loading point, and wafers can be handled automatically within the controlled
environment of the machine. Aler processing, the wafer can be loaded into
another FOUP and moved on to the next tool. Since a process tool may not be
available immediately, FOUPs are kept in storage until a spot opens up and
they can be moved. FOUPs in storage will be occasionally >ushed with
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nitrogen to ensure no contaminants reach the wafers inside. 3
But rogue particles aren’t the only thing that can disrupt the manufacturing
process, and every part of the fab, from the cleanroom down to the
foundation, must be designed to minimize outside interference. The extreme
precision required means process tools are extremely sensitive to vibration
(even loud noises can negatively adect the manufacturing process), and fabs
are designed to minimize it. Fabs are typically built away from airports, rail
lines, busy highways, and any other signiRcant outside source of vibrations,
and the fab supporting facilities themselves must also be designed to
eliminate vibrations. (In one case, unacceptable cleanroom >oor vibrations
were being caused by an exhaust vent 400 feet away from the fab building.)
This extreme vibration sensitivity is exacerbated by the enormous amount of
potentially vibration-generating machinery and equipment in a fab such as
motors, pumps, HVAC systems, and even >uid >ow in pipes. Fabs must limit
vibrations to several orders of magnitude below the threshold of perception,
while simultaneously absorbing 100 times the mechanical energy and 50 times
the air >ow as a conventional building.
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Vibration requirements for different building types. The most
sensitive areas in modern semiconductor fabs are built to VC-D or
E requirements, or even higher. Via Bayat et al 2012.
Beneath the carefully controlled conditions of the cleanroom lies the sub-fab:
one or more levels of equipment needed to support the operations of the
cleanroom. An EUV lithography machine, for instance, is a complex piece of
equipment the size of a truck, but the cleanroom tool is only a portion of the
total equipment required. Beneath the cleanroom lies the enormous CO2 laser
that drives the EUV system, and the pumps required to create the vacuum
within the process chamber. Many other process tools, such as ion implanters
and sputtering machines, also require a vacuum, and a large fab may have
thousands of vacuum pumps in the sub-fab.
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Rendering of a process tool with support equipment in the sub-fab
below, via Crystal5D Technologies.
The sub-fab is also where many of the chemicals required for process tools are
stored and routed (although some chemicals, particularly highly toxic ones,
will be stored within the process tools to minimize the risk of leaks, while
others will be stored outside the fab building). A semiconductor fab uses a
wide variety of chemicals, ranging from nitrogen (used for purging and
cleaning FOUPS and process tools), oxygen (used in oxidation furnaces and
abatement equipment), argon (used in plasma reactions), hydrogen (used in
EUV machine cleaning) and others. The volume of chemicals and gasses used,
and the amount of exhaust generated, requires an enormous amount of piping,
with some pipes reaching up to ten feet in diameter. And these chemicals
must be extremely pure, in some cases 99.9999999% pure.
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Semiconductor gasses, via link.
Many of the chemicals used in the fab, such as phosphine and arsine for
doping, are highly toxic. Others, such as the silane used in some CVD
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processes, are pyrophoric (meaning they ignite spontaneously with air.) One
chemical, the chlorine tri>uoride used for cleaning CVD chambers, is so toxic
and so prone to spontaneous ignition (it's capable of setting wet sand on Rre)
that some chemists refuse to work with it. These chemicals require special
handling and leak detection systems, backup power systems, and specially
designed Rre protection systems due to the hazard they represent.
The sub-fab also contains the exhaust systems for handling the various
byproducts generated by the process tools. To prevent byproducts
(particularly ammonia) from reacting with each other, several separate exhaust
systems must be used. Many of the processes require abatement equipment
(which will burn od any harmful byproducts) or scrubbers to remove
hazardous material. This equipment might be mounted to the process tool
itself, or be part of a centralized exhaust system.
All this equipment and processes consume large amounts of energy. A large
fab might demand 100 megawatts of energy, or 10% of the capacity of a large
nuclear reactor. Most of this energy is used by the process tools, the HVAC
system and other heating/cooling systems. The demands for power and water
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are severe enough that some fabs have been canceled or relocated when local
utilities can’t guarantee supply. And to ensure the proper conditions are
maintained in the fab, tens of thousands of sensors are used for monitoring
things like particle levels, pressures, and impurity levels.
Constructing a fab
A large fab will have hundreds of thousands of square feet of cleanroom, and
the facility might be spread over hundreds of acres. Building it requires tens
of thousands of tons of structural steel, and hundreds of thousands of yards of
concrete. Intel boasts that its fabs use twice the concrete as the Burj Khalifa,
and Rve times the metal used in the Eidel Tower.
Once the fab is complete to the point where positive pressure can be
maintained in the cleanroom (known as “blow down”), the process tooling can
be installed. Equipment might arrive in many separate pieces and need a long
and careful assembly process — one of ASML’s advanced EUV machines
“ships in 40 freight containers, spread over 20 trucks and three cargo planes.”
Tools must be handled carefully: the sensitivity of production tools means
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that a dropped or bumped piece of equipment can result in delays and
millions of dollars of repair. And once tooling is installed, it might take six
months to a year of ramp up before the fab is hitting acceptable process
yields.
Despite their size and complexity, fabs are built surprisingly quickly, around
two to four years on average. This is not all that diderent from other large
commercial building projects, and far faster than some other tightly
controlled process facilities, like nuclear power plants.
In the US, however, fabs are built slower than elsewhere in the world. Fab
construction time in the US has increased from just over 650 days on average
in the 1990s to over 900 days on average in the 2010s, compared to around 600-
700 days in Asian countries, in part because of increasingly stringent
environmental review processes. US fabs are also more expensive to build
than in other parts of the world, with estimates ranging from 30% more
expensive (per Intel) to up to four times as expensive (per TSMC). 4
The equipment proportion of fab cost has risen over time. DRAM fabs in the
mid-1980s, for instance, were roughly equally split between facilities and
equipment cost, but by the late 1990s equipment made up the vast majority of
the cost.
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Construction costs vs equipment costs in DRAM fabs, via Art et al
1994.
For the cost of construction, we see a somewhat similar breakdown as the cost
of single family homes, with line items for the structure, architectural
Rnishes, sitework and landscaping, and services and mechanical systems. The
main diderence is that a fab has a much higher fraction of mechanical,
electrical and other services. Things like ultrapure water facilities, multiple
exhaust systems, and enormous HVAC needs mean that services make up
close to 2/3rds of the cost of a new fab, compared to less than 20% of the cost
in a single family home.
For the cost of equipment, the largest expense will typically be the lithography
machines followed by equipment for deposition and cleaning and etching.
The cost of lithography machines is olen estimated as 20% of the cost of a
new fab, which means that lithography tools can cost as much as the entire
fab facility itself.
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As time has gone on and transistors have shrunk, the cost to build a fab has
risen. For modern semiconductor fabs, each new process node increases fab
cost by about 30%. There are two main drivers of this increase. One is that
more advanced process nodes require more expensive equipment. ASML’s
EUV lithography machines, for instance, are far more expensive than the deep
ultraviolet machines that they replaced. The second main cost driver is that as
transistors continue to shrink, more masks and process steps are required to
manufacture them. Connecting transistors together requires more layers of
metal wires, and FinFETS (transistors made from “Rns” that project up from
the wafer’s surface) require more layering steps than the simpler transistors
they replaced. (EUV, however, temporarily reversed this trend, as it made it
possible to do in one mask what previously took two or more, and thus
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reduced the number of process steps.) More layers and more process steps
means more equipment: if product A has twice the manufacturing steps as
product B, it will require twice as much equipment to produce if the output
level is to remain constant.
But there are also other cost drivers beyond these two factors. As
semiconductor features have gotten smaller, the silicon wafers used to
produce them have gotten larger. Chips were produced on 50 mm wafers in
the 1970s, but today’s leading-edge fabs use much larger 300 mm wafers (a
transition to 450mm wafers was planned but never executed), and larger
wafers tend to require more expensive equipment. The switch to 300 mm
wafers, for instance, necessitated much greater use of automated material
handling equipment, as the wafers were too heavy to carry around in FOUPs
by hand. These handling systems, in turn, required larger structures with
taller cleanroom ceilings.
The ever-increasing cost of fabs has created a shil in the structure of the
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semiconductor industry. When fabs were cheaper to build, any chip producer
could adord to have their own fabs. But as fab costs increased, it became more
and more burdensome for manufacturers to operate cutting edge
manufacturing facilities due to the high costs, and fewer manufacturers had
the production volume to spread those costs over. The “e`cient scale” of a
150 mm wafer fab is around 10,000 wafers a month, but for a 300 mm logic
wafer fab, that jumps to 40,000 wafers. (And memory wafer fabs will be even
larger, at 120,000 wafers per month. Thus only a very small number of
companies (currently TSMC, Samsung, and Intel) attempt to operate leading-
edge nodes, and the industry has shiled to a “fabless” model where
companies like Apple and Nvidia design their chips but have them
manufactured by “foundries” like TSMC. By pooling the orders of many
diderent chip companies, the foundries can achieve the scale necessary to
adord cutting edge fabs.
Conclusion
The enormous expense of a modern semiconductor fab boils down to the
intersection of two things. One is that semiconductor fabs are mass
production factories, with modern “gigafabs” producing hundreds of millions
of chips per year, each chip containing billions of transistors. 5 The second is
that producing semiconductors requires almost unfathomable levels of
precision. Manipulating huge volumes of matter on the atomic level,
repeatedly and reliably, 24 hours a day 365 days a year, is an enormously
expensive undertaking.
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1 Determining the size of transistor features is complicated by the fact that process
node descriptions don’t match the actual size of features. TSMC’s 5-nanometer
node, for instance, is just a name and a marketing node, and doesn’t correspond to
actual feature size.
3 Prior to FOUPs, wafers were olen carried in similar containers called SMIFS.
Because they were used for smaller wafers, SMIFs were light enough to be carried
by an individual person, and required less material handling automation.
4 It's possible the 4x cost is referring to just the facility, not the equipment. This
would place US total fab costs at around 60-90% higher.
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Tom May 4
Really enjoyed reading this article, absolutely awesome job. As a retired EE with
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some experience with IC design and fab (back in the 70s), I can really appreciate
the engineering innovation that goes into a modern fab.
I can’t help but wonder how the engineering challenge of a modern fab compares
to, say, an AP1000 nuclear plant. Seems like a nuclear plant is much, much simpler.
Nuclear costs are probably around 5 times what they should be due to over
wrought safety concerns.
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My major model is a 380MB Sketch-Up model building, but that was really close to
800MB before Sketch-Up compressed the filesize in their latest desktop version
(and last; now they want a yearly subscription for the newer versions). It is
noticeably slower to load, manipulate, etc., especially if other things are running. If I
had known that up front, I would have just replaced the hard drive in the old
machine when that died. In contrast, the 2015 iMac was much faster than the 2009
iMac it replaced, which was so slow it became unusable for my model and had to be
replaced.
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