NSI45020A

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NSI45020AT1G

Constant Current Regulator


& LED Driver
45 V, 20 mA + 10%, 460 mW Package
The linear constant current regulator (CCR) is a simple, economical
and robust device designed to provide a cost−effective solution for
regulating current in LEDs (similar to Constant Current Diode, CCD).
The CCR is based on Self-Biased Transistor (SBT) technology and http://onsemi.com
regulates current over a wide voltage range. It is designed with a
negative temperature coefficient to protect LEDs from thermal Ireg(SS) = 20 mA
runaway at extreme voltages and currents.
The CCR turns on immediately and is at 25% of regulation with @ Vak = 7.5 V
only 0.5 V Vak. It requires no external components allowing it to be
designed as a high or low−side regulator. The high anode-cathode Anode 2
voltage rating withstands surges common in Automotive, Industrial
and Commercial Signage applications. The CCR comes in thermally
robust packages and is qualified to AEC-Q101 standard, and
UL94−V0 certified.
Features
• Robust Power Package: 460 mW Cathode 1
• Wide Operating Voltage Range
• Immediate Turn-On
• Voltage Surge Suppressing − Protecting LEDs 2
• UL94−V0 Certified
1
• SBT (Self−Biased Transistor) Technology
SOD−123
• Negative Temperature Coefficient CASE 425
• NSV Prefix for Automotive and Other Applications Requiring STYLE 1
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
MARKING DIAGRAM
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant AD M G
1 2
Applications G
• Automobile: Chevron Side Mirror Markers, Cluster, Display &
Instrument Backlighting, CHMSL, Map Light AD = Device Code
M = Date Code
• AC Lighting Panels, Display Signage, Decorative Lighting, Channel G = Pb−Free Package
Lettering (Note: Microdot may be in either location)
• Switch Contact Wetting
• Application Note AND8391/D − Power Dissipation Considerations
ORDERING INFORMATION
• Application Note AND8349/D − Automotive CHMSL
MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Device Package Shipping†

Rating Symbol Value Unit NSI45020AT1G SOD−123 3000/Tape & Reel


(Pb−Free)
Anode−Cathode Voltage Vak Max 45 V
NSV45020AT1G SOD−123 3000/Tape & Reel
Reverse Voltage VR 500 mV (Pb−Free)
Operating and Storage Junction TJ, Tstg −55 to +150 °C †For information on tape and reel specifications,
Temperature Range including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
ESD Rating: Human Body Model ESD Class 1C Brochure, BRD8011/D.
Machine Model Class B
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

© Semiconductor Components Industries, LLC, 2014 1 Publication Order Number:


April, 2014 − Rev. 6 NSI45020A/D
NSI45020AT1G

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)


Characteristic Symbol Min Typ Max Unit
Steady State Current @ Vak = 7.5 V (Note 1) Ireg(SS) 18 20 22 mA
Voltage Overhead (Note 2) Voverhead 1.8 V
Pulse Current @ Vak = 7.5 V (Note 3) Ireg(P) 19.85 22.5 25.15 mA
Capacitance @ Vak = 7.5 V (Note 4) C 2.5 pF
Capacitance @ Vak = 0 V (Note 4) C 5.7 pF
1. Ireg(SS) steady state is the voltage (Vak) applied for a time duration ≥ 10 sec, using FR−4 @ 300 mm2 1 oz. Copper traces, in still air.
2. Voverhead = Vin − VLEDs. Voverhead is typical value for 85% Ireg(SS).
3. Ireg(P) non−repetitive pulse test. Pulse width t ≤ 300 msec.
4. f = 1 MHz, 0.02 V RMS.

Figure 1. CCR Voltage−Current Characteristic

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NSI45020AT1G

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation (Note 5) TA = 25°C PD 208 mW
Derate above 25°C 1.66 mW/°C

Thermal Resistance, Junction−to−Ambient (Note 5) RθJA 600 °C/W


Thermal Reference, Lead−to−Ambient (Note 5) RψLA 404 °C/W

Thermal Reference, Junction−to−Cathode Lead (Note 5) RψJL 196 °C/W

Total Device Dissipation (Note 6) TA = 25°C PD 227 mW


Derate above 25°C 1.8 mW/°C

Thermal Resistance, Junction−to−Ambient (Note 6) RθJA 550 °C/W


Thermal Reference, Lead−to−Ambient (Note 6) RψLA 390 °C/W

Thermal Reference, Junction−to−Cathode Lead (Note 6) RψJL 160 °C/W

Total Device Dissipation (Note 7) TA = 25°C PD 347 mW


Derate above 25°C 2.8 mW/°C

Thermal Resistance, Junction−to−Ambient (Note 7) RθJA 360 °C/W


Thermal Reference, Lead−to−Ambient (Note 7) RψLA 200 °C/W

Thermal Reference, Junction−to−Cathode Lead (Note 7) RψJL 160 °C/W

Total Device Dissipation (Note 8) TA = 25°C PD 368 mW


Derate above 25°C 2.9 mW/°C

Thermal Resistance, Junction−to−Ambient (Note 8) RθJA 340 °C/W


Thermal Reference, Lead−to−Ambient (Note 8) RψLA 208 °C/W

Thermal Reference, Junction−to−Cathode Lead (Note 8) RψJL 132 °C/W

Total Device Dissipation (Note 9) TA = 25°C PD 436 mW


Derate above 25°C 3.5 mW/°C

Thermal Resistance, Junction−to−Ambient (Note 9) RθJA 287 °C/W


Thermal Reference, Lead−to−Ambient (Note 9) RψLA 139 °C/W

Thermal Reference, Junction−to−Cathode Lead (Note 9) RψJL 148 °C/W

Total Device Dissipation (Note 10) TA = 25°C PD 463 mW


Derate above 25°C 3.7 mW/°C

Thermal Resistance, Junction−to−Ambient (Note 10) RθJA 270 °C/W


Thermal Reference, Lead−to−Ambient (Note 10) RψLA 150 °C/W

Thermal Reference, Junction−to−Cathode Lead (Note 10) RψJL 120 °C/W

Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C


5. FR−4 @ 100 mm2, 1 oz. copper traces, still air.
6. FR−4 @ 100 mm2, 2 oz. copper traces, still air.
7. FR−4 @ 300 mm2, 1 oz. copper traces, still air.
8. FR−4 @ 300 mm2, 2 oz. copper traces, still air.
9. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
10. FR−4 @ 500 mm2, 2 oz. copper traces, still air.
NOTE: Lead measurements are made by non−contact methods such as IR with treated surface to increase emissivity to 0.9.
Lead temperature measurement by attaching a T/C may yield values as high as 30% higher °C/W values based upon empirical
measurements and method of attachment.

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NSI45020AT1G

TYPICAL PERFORMANCE CURVES


Minimum FR−4 @ 300 mm2, 1 oz Copper Trace, Still Air

25 23.0
Ireg(SS), STEADY STATE CURRENT (mA)

TA = −40°C
[ −0.052 mA/°C

Ireg(P), PULSE CURRENT (mA)


TA = 25°C typ @ Vak = 7.5 V 22.5
20
[ −0.044 mA/°C TA = 25°C
TA = 85°C typ @ Vak = 7.5 V
22.0
15
21.5
10
21.0

5
20.5

DC Test Steady State, Still Air Non−Repetitive Pulse Test


0 20.0
0 1 2 3 4 5 6 7 8 9 10 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
Vak, ANODE−CATHODE VOLTAGE (V) Vak, ANODE−CATHODE VOLTAGE (V)

Figure 2. Steady State Current (Ireg(SS)) vs. Figure 3. Pulse Current (Ireg(P)) vs.
Anode−Cathode Voltage (Vak) Anode−Cathode Voltage (Vak)
22 23
Ireg(SS), STEADY STATE CURRENT (mA)

Vak @ 7.5 V Vak @ 7.5 V


Ireg, CURRENT REGULATION (mA)
TA = 25°C TA = 25°C
21 22

20 21

19 20

18 19
19 20 21 22 23 24 25 26 0 5 10 15 20 25 30 35
Ireg(P), PULSE CURRENT (mA) TIME (s)

Figure 4. Steady State Current vs. Pulse Figure 5. Current Regulation vs. Time
Current Testing

800
PD, POWER DISSIPATION (mW)

700
500 mm2/2 oz
600
500 mm2/1 oz
500
300 mm2/2 oz
400 300 mm2/1 oz

300
100 mm2/2 oz
100 mm2/1 oz
200

100
−40 −20 0 20 40 60 80
TA, AMBIENT TEMPERATURE (°C)

Figure 6. Power Dissipation vs. Ambient


Temperature @ TJ = 1505C

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NSI45020AT1G

APPLICATIONS INFORMATION

The CCR is a self biased transistor designed to regulate the


current through itself and any devices in series with it. The
device has a slight negative temperature coefficient, as
shown in Figure 2 – Tri Temp. (i.e. if the temperature
increases the current will decrease). This negative
temperature coefficient will protect the LEDS by reducing
the current as temperature rises.
The CCR turns on immediately and is typically at 20% of
regulation with only 0.5 V across it.
The device is capable of handling voltage for short
durations of up to 45 V so long as the die temperature does
not exceed 150°C. The determination will depend on the
thermal pad it is mounted on, the ambient temperature, the
pulse duration, pulse shape and repetition.

Single LED String


The CCR can be placed in series with LEDs as a High Side
or a Low Side Driver. The number of the LEDs can vary
from one to an unlimited number. The designer needs to
calculate the maximum voltage across the CCR by taking the
Figure 8.
maximum input voltage less the voltage across the LED
string (Figures 7 and 8).
Higher Current LED Strings
Two or more fixed current CCRs can be connected in
parallel. The current through them is additive (Figure 9).

Figure 7.

Figure 9.

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NSI45020AT1G

Other Currents LEDs on and off for a portion of a single cycle. This on/off
The adjustable CCR can be placed in parallel with any cycle is called the Duty cycle (D) and is expressed by the
other CCR to obtain a desired current. The adjustable CCR amount of time the LEDs are on (Ton) divided by the total
provides the ability to adjust the current as LED efficiency time of an on/off cycle (Ts) (Figure 12).
increases to obtain the same light output (Figure 10).

Figure 12.
The current through the LEDs is constant during the period
they are turned on resulting in the light being consistent with
no shift in chromaticity (color). The brightness is in proportion
to the percentage of time that the LEDs are turned on.
Figure 13 is a typical response of Luminance vs Duty Cycle.
6000

5000
ILLUMINANCE (lx)

Figure 10. 4000

Dimming using PWM 3000


The dimming of an LED string can be easily achieved by
placing a BJT in series with the CCR (Figure 11). 2000

1000 Lux
Linear

0
0 10 20 30 40 50 60 70 80 90 100
DUTY CYCLE (%)
Figure 13. Luminous Emmitance vs. Duty Cycle

Reducing EMI
Designers creating circuits switching medium to high
currents need to be concerned about Electromagnetic
Interference (EMI). The LEDs and the CCR switch
extremely fast, less than 100 nanoseconds. To help eliminate
EMI, a capacitor can be added to the circuit across R2.
(Figure 11) This will cause the slope on the rising and falling
edge on the current through the circuit to be extended. The
slope of the CCR on/off current can be controlled by the
Figure 11. values of R1 and C1.
The method of pulsing the current through the LEDs is The selected delay / slope will impact the frequency that
known as Pulse Width Modulation (PWM) and has become is selected to operate the dimming circuit. The longer the
the preferred method of changing the light level. LEDs being delay, the lower the frequency will be. The delay time should
a silicon device, turn on and off rapidly in response to the not be less than a 10:1 ratio of the minimum on time. The
current through them being turned on and off. The switching frequency is also impacted by the resolution and dimming
time is in the order of 100 nanoseconds, this equates to a steps that are required. With a delay of 1.5 microseconds on
maximum frequency of 10 Mhz, and applications will the rise and the fall edges, the minimum on time would be
typically operate from a 100 Hz to 100 kHz. Below 100 Hz 30 microseconds. If the design called for a resolution of 100
the human eye will detect a flicker from the light emitted dimming steps, then a total duty cycle time (Ts) of 3
from the LEDs. Between 500 Hz and 20 kHz the circuit may milliseconds or a frequency of 333 Hz will be required.
generate audible sound. Dimming is achieved by turning the

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NSI45020AT1G

Thermal Considerations T J(MAX) * T A


As power in the CCR increases, it might become P D(MAX) +
R qJA
necessary to provide some thermal relief. The maximum
Referring to the thermal table on page 2 the appropriate
power dissipation supported by the device is dependent
RqJA for the circuit board can be selected.
upon board design and layout. Mounting pad configuration
on the PCB, the board material, and the ambient temperature AC Applications
affect the rate of junction temperature rise for the part. When The CCR is a DC device; however, it can be used with full
the device has good thermal conductivity through the PCB, wave rectified AC as shown in application notes
the junction temperature will be relatively low with high AND8433/D and AND8492/D and design notes
power applications. The maximum dissipation the device DN05013/D and DN06065/D. Figure 14 shows the basic
can handle is given by: circuit configuration.

Figure 14. Basic AC Application

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NSI45020AT1G

PACKAGE DIMENSIONS

SOD−123
CASE 425−04
ISSUE G

D
A NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A1 Y14.5M, 1982.

ÂÂÂÂ
2. CONTROLLING DIMENSION: INCH.
1

ÂÂÂÂ
MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
A 0.94 1.17 1.35 0.037 0.046 0.053
A1 0.00 0.05 0.10 0.000 0.002 0.004
b 0.51 0.61 0.71 0.020 0.024 0.028
HE E c --- --- 0.15 --- --- 0.006
D 1.40 1.60 1.80 0.055 0.063 0.071
E 2.54 2.69 2.84 0.100 0.106 0.112
HE 3.56 3.68 3.86 0.140 0.145 0.152
L 0.25 --- --- 0.010 --- ---
q 0° --- 10 ° 0° --- 10 °
2
q STYLE 1:
PIN 1. CATHODE
b L 2. ANODE

SOLDERING FOOTPRINT*

ÉÉ ÉÉ
0.91
0.036

ÉÉ
ÉÉ ÉÉ
ÉÉ
1.22
0.048

ÉÉ 2.36
0.093
ÉÉ
4.19
0.165

SCALE 10:1 ǒinches


mm Ǔ

*For additional information on our Pb−Free strategy and soldering


details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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