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R15 Edc

The document is a question paper for an electronics exam containing multiple choice and numerical problems. It covers topics like ideal and non-ideal diode characteristics, rectifiers, regulated power supplies, transistor regions of operation, biasing circuits, and FET characteristics. The paper tests understanding of fundamental electronic devices and circuits concepts.

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mounika.avirineni
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15 views2 pages

R15 Edc

The document is a question paper for an electronics exam containing multiple choice and numerical problems. It covers topics like ideal and non-ideal diode characteristics, rectifiers, regulated power supplies, transistor regions of operation, biasing circuits, and FET characteristics. The paper tests understanding of fundamental electronic devices and circuits concepts.

Uploaded by

mounika.avirineni
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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R15

Code No: R15A0401


MALLA REDDY COLLEGE OF ENGINEERING & TECHNOLOGY
(Autonomous Institution – UGC, Govt. of India)
II B.Tech I Semester Supplementary Examinations, April 2023
Electronic Devices and Circuits
(ECE & CSE)
Roll No

Time: 3 hours Max. Marks: 75


Note: This question paper contains two parts A and B
Part A is compulsory which carriers 25 marks and Answer all questions.
Part B Consists of 5 SECTIONS (One SECTION for each UNIT). Answer FIVE
Questions, Choosing ONE Question from each SECTION and each Question carries
10 marks.
***
PART-A (25 Marks)

1). a Draw the ideal diode model for forward and reverse bias. [2M]
b Compare the V-I Characteristics of Ideal diode and non-ideal diode. [3M]
c Draw the circuit diagram of half wave rectifier. [2M]
d Draw the block diagram of the regulated power supply. Name the function [3M]
of each block.
e Enumerate the operating regions of a transistor. In which regions it [2M]
operates like a switch.
f The operating point of a Class B amplifier is located at which portion in [3M]
the load line. What is its maximum efficiency?
g What do you mean by Thermal runaway? [2M]
h List out the advantages of self-biasing circuit? [3M]
i Draw the drain characteristics of JFET [2M]
j Mention three different regions of operation of MOSFET. In which region [3M]
MOSFET acts as resistor?
PART-B (50 MARKS)
SECTION-I
2 Construct a PN-junction diode and illustrate the formation of the depletion [10M]
region in a p-n junction. How does the width of this region change when
the junction is: (i) Forward biased (ii) Reverse biased. At the temperature
of 27oC, calculate the thermal voltage.
OR
3 Define static and dynamic resistance of a junction diode. Derive an [10M]
expression for dynamic resistance.
SECTION-II
4 [10M]

Consider the diode circuit shown in Fig. Sketch Vo if Vi = 40 sin ωt.


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Indicate all voltage levels. Assume that all diodes are ideal.
OR
5 Explain the working principle and operation of centre tapped transformer [10M]
based full wave rectifier.
SECTION-III
6 Draw and explain input and output characteristics of an NPN transistor in [10M]
CE configuration. Suppose the base current is 100AandICO is 0.5mA.
Calculate the collector and emitter currents for CE configuration. Assume
=0.9.
OR
7 Develop hybrid model for transistor in CE configuration. [10M]
SECTION-IV
8 Derive the expressions for operating point and stability factor ofvoltage [10M]
divider bias method.
OR
9 For the amplifier shown in the Figure below, assume ℎie = 1 𝐾𝛺 andℎfe = [10M]
100 Alsoℎoe = ℎre = 0. Find 𝐴𝑣 , 𝐴𝑣𝑠 , 𝑅𝑖 and 𝑅0 . Assume all capacitors

to be short circuit.
SECTION-V
10 Explain the operation of N-channel enhancement MOSFET and draw its [10M]
ID-VDScharacteristics.
OR
11 Explain the transfer and drain characteristics of Junction Field Effect [10M]
Transistor.
***

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