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R17 Edc

This document is an exam paper for an electronics course. It contains 10 questions across 5 sections related to electronic devices and circuits. The questions cover topics like diode characteristics, rectifiers, transistor configurations, biasing techniques, and FET operation.

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mounika.avirineni
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16 views2 pages

R17 Edc

This document is an exam paper for an electronics course. It contains 10 questions across 5 sections related to electronic devices and circuits. The questions cover topics like diode characteristics, rectifiers, transistor configurations, biasing techniques, and FET operation.

Uploaded by

mounika.avirineni
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Code No: R17A0401

R17
MALLA REDDY COLLEGE OF ENGINEERING & TECHNOLOGY
(Autonomous Institution – UGC, Govt. of India)
II B.Tech I Semester Supplementary Examinations, April 2023
Electronic Devices and Circuits
(EEE, ECE, CSE & IT)
Roll No

Time: 3 hours Max. Marks: 70


Note: This question paper Consists of 5 Sections. Answer FIVE Questions, Choosing ONE
Question from each SECTION and each Question carries 14 marks.
***
SECTION-I
1 A The reverse saturation current of a germanium diode is 100µA at room [7M]
temperature of 270 C. Calculate the current in forward biased condition, if
forward bias voltage is 0.2V at room temperature. If temperature is increased
by 200 C , calculate the reverse saturation current and the forward current for
same forward voltage at new temperature
B Explain the operation of Zener diode and explain how it act as voltage [7M]
regulator in detail.
OR
2 A (i) Compare Zener and Avalanche break downs [7M]
(ii) Determine the value of forward current in the case of p-n junction
silicon diode with I0 = 10 µA, Vf = 0.8V , T= 300 K.
B Explain in detail about the forward and reverse biased conditions of p-n [7M]
junction diode and also explain about the estimation of static and dynamic
resistances.
SECTION-II
3 A Derive the expression for the following parameters [7M]
(i)IDC (ii) EDC (iii) Irms (iv) efficiency (v) ripple factor
of a Full-wave-rectifier.
B A 230 V, 50Hz voltage is applied to the primary of a 3:1 step down [7M]
transformer used in a Half wave rectifier having a load of 10KΩ. If the diode
resistance and the secondary coil resistance are 75 Ω and 10 Ω, determine
maximum, average and RMS values of current , DC voltage across the load,
efficiency, ripple factor.

OR
4 A Derive the expression for the following parameters [6M]
(i)IDC (ii) EDC (iii) Irms (iv) efficiency (v) ripple factor
of a Half Wave rectifier.
B A centre tapped full wave rectifier circuit the RMS half secondary voltage is
9V assuming ideal diodes and load resistance RL = 1KΩ. Calculate
i) Peak Curent [2M]
ii) DC load Voltage [2M]
iii) Irms [2M]
iv) ripple factor [2M]

Page 1 of 2
SECTION-III
5 A For a certain transistor IC = 5.255mA, IB =100 µA and ICBO = 5 µA [7M]
(i) calculate α, β and IE.
(ii) Detrmine the new level of IB required to make IC =15 mA
B Explain in detail about the operation of Transistor in CB configuration with [7M]
suitable diagrams .
OR
6 A For a single-stage Transistor Amplifier, RS = 2 kΩ and RL = 5 kΩ. The h- [7M]
parameter values are hfb = 0.98, hib = 21Ω, hrb = 2.9*10-4 and hob = 0.49
µA/V. Find AI, AV, Ri and Ro for CB transistor configuration
B Differentiate CB, CE, CC configurations on indicating all parameters [7M]
necessary and with suitable basic diagrams of configurations.
SECTION-IV
7 A Define biasing? Draw the Self bias circuit and obtain the expression for the [7M]
stability factor?
B [7M]

For circuit shown is subjected to temperature change ; and the value of β =


100 at 250 C and β = 125 at 75 0 C determine the percentage change in the
Q-point values over the temperature range .

OR
8 A What is the need for biasing and explain the DC and AC load line analysis [7M]
for Q- point identification
B Design a collector to base bias circuit using silicon transistor to achieve a [7M]
stability factor of 20, with the following specifications:
VCC = 16V, VBE = 0.7V, VCEQ = 8V, Icq=4ma & β=50
SECTION-V
9 A Explain the construction and operation of JFET with its characteristics and [7M]
explain the different regions in VI characteristics?
B Analyze the operation of FET with fixed bias and derive the values of Input [7M]
impedance, output impedance, voltage gain.

OR
10 A Explain the construction & operation of a n-channel MOSFET in [7M]
enhancement and depletion modes with the help of static drain characteristics
and transfer characteristics?
B Compare BJT and FET and list our their advantages and disadvantages. [7M]
***

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